{'fraction_non_alphanumeric': 0.025799793601651185, 'fraction_numerical': 0.009287925696594427, 'mean_word_length': 5.928571428571429, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Thermo- and galvanomagnetic properties of hetrophases materials of high pressure

In present paper the longitudinal and transverse thermomagnetic Nernst-Ettingshausen effects and also magnetoresistance were investigated at high pressure chambers with sintered diamond anvils near semiconductor-metal transition points. Chalcogens (Te, Se) and chalcogenides (PbS, PbSe, PbTe) semiconductor micro-samples have been chosen as an objects for experimental study. The calculations of thermo- and galvanomagnetic properties of heterophase materials as a function of inclusion concentration and configuration were performed in the model of the oriented inclusions model with variable phase configuration. Both the approach and experimental technique developed seems to be perspective for using in micro-device technology for quality control and advanced semiconductor manufacturing. The work was supported by the Russian Foundation for Basic Research (RFBR), Gr.No.01-02-17203.