{'fraction_non_alphanumeric': 0.0304093567251462, 'fraction_numerical': 0.031578947368421054, 'mean_word_length': 5.202898550724638, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effect of Zinc Content on Dielectric Properties of Cubic Pyrochlore Bi2O3–ZnO–Nb2O5 Thin Films

Cubic pyrochlore Bi2O3–ZnO–Nb2O5 (BZN) thin films with different zinc contents have been deposited on Pt(111)/TiOx/SiO2/Si(100) substrates by rf magnetron sputtering. Dielectric property measurements revealed the dependence of dielectric properties on zinc content in BZN thin films. BZN thin films with a composition close to that of Bi1.5Zn1.0Nb1.5O7 demonstrate the largest permittivity of ∼160 and the highest tunability of ∼20%. Both insufficient and excess zinc contents have resulted in smaller permittivity as well as degraded dielectric tunability. The role of zinc in the tunability of BZN thin films was discussed in light of field-forced rearrangement of the randomly disordered ions on the A and O' sites under the influence of an electric field.