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Basic properties of lateral MIS tunnel transistor

The Lateral MIS Tunnel Transistor (LMISTT) is a transistor structure which exploits the combined properties of lateral MIS tunnel structures and non-equilibrium MIS tunnel diodes. Due to its features the LMISTT offers possibilities in a variety of applications including very large scale integrated high speed IC's. In this work the various aspects of design and processing of this device are discussed in relation to its basic properties and performance.