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Ion implanter and ion implantation method

The present invention is to provide an ion implanter and an ion implantation method that reduce an implantation angle error to a workpiece. A beamline unit of an ion implanter (100) includes a steering electromagnet (30), a beam scanner (34), and a beam collimator (36). The beamline unit contains a reference trajectory of an ion beam. A z direction shows the reference trajectory direction, and an X direction is perpendicular to the z direction. The steering electromagnet deflects the ion beam in the x direction. The beam scanner deflects the ion beam in the x direction in a reciprocating manner to scan the ion beam. The beam collimator includes a collimating lens that collimates the scanned ion beam in the z direction along the reference trajectory, and the collimating lens has a focus at a scan origin of the beam scanner. A controller corrects a deflection angle in the x direction in the steering electromagnet so that an actual trajectory of the deflected ion beam intersects with the reference trajectory at the scan origin on an xz plane.