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Fabrication and characterization of circular geometry InP/InGaAs double heterojunction bipolar transistors

An MOCVD-grown circular geometry InP/InGaAs double heterojunction bipolar transistor utilizing a novel δ+-layer composite collector structure was fabricated. A breakdown voltage of 12 V and an offset voltage of just 100 mV were achieved and high injection current densities over 3.2 × 105 A cm−2, which suggest no significant current blocking related to the wide bandgap InP collector layers. A cut-off frequency of 42 GHz was measured at a collector current density of 1.1 × 106 A cm−2.