{'fraction_non_alphanumeric': 0.02383053839364519, 'fraction_numerical': 0.00353045013239188, 'mean_word_length': 5.914634146341464, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 1, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Large Hall Signal due to Electrical Switching of an Antiferromagnetic Weyl Semimetal State

In nanoscale technology, topologically protected properties are expected to take on a significant role in developing next generation electronic devices. Recent extensive studies indicate that such robust properties can be found in topological Weyl semimetals. Characterized by topologically protected Weyl points, acting as a source and drain of Berry curvature, the magnetic Weyl semimetals may exhibit large responses, such as anomalous Hall effect (AHE), anomalous Nernst effect (ANE), and chiral anomaly. Developing the technology to electrically manipulate the topological responses should enable storing information by taking advantage of the robust topological properties, and, thus, designing a new type of nonvolatile memory. Such electrical manipulation of large topological responses has been recently demonstrated for a magnetic Weyl semimetal. In particular, magnetic switching of the antiferromagnet Mn3Sn has been performed using spin–orbit torque (SOT) by applying electrical current in Ru/Mn3Sn/Pt or W heterostructure. [23]