{'fraction_non_alphanumeric': 0.05820721769499418, 'fraction_numerical': 0.018626309662398137, 'mean_word_length': 4.972222222222222, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
III–V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding

We demonstrated the integration of high-mobility channel InGaAs n-channel and Ge p-channel metal–oxide–semiconductor field-effect transistors (nMOSFETs and pMOSFETs) with self-aligned Ni–InGaAs and Ni–Ge metal source/drain (S/D) on a Ge substrate by direct wafer bonding (DWB). Ni-based metal S/D and Al2O3-based gate stacks have realized the fabrication of high-electron-mobility InGaAs-on-insulator (InGaAs-OI) nMOSFETs and high-hole-mobility Ge pMOSFETs at the same time. The InGaAs-OI nMOSFETs and Ge pMOSFETs exhibited high electron and hole mobilities of 1800 and 260 cm2 V-1 s-1 and mobility enhancements against Si of 3.5× and 2.3×, respectively.