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Structure and Chemistry of Oxide Surface Reconstructions in III-Nitrides Observed using STEM EELS

While characterization in the bulk of materials has become thoroughly performed for many systems, surfaces often have reconstructions with dissimilar structure. Because of the deviation from parent structure, surfaces have been shown to exhibit different electronic states than bulk [1,2]. One important system that surfaces play an important role is in the family of III-nitrides with applications ranging from light emitting diodes to deep ultraviolet lasers for water purification; however, a strong understanding of surface features remains unresolved. Towards this end, many studies have been performed to provide information on reconstructions in III-nitride surfaces. Previously, XPS has found that oxygen is present near the c-plane surface. Knowing that oxygen is contained at the surface, many efforts using first principles density functional theory (DFT) have been performed with aims to uncover the origins of electronic properties such as the formation of the two-dimensional electron gas [3,4]. Although several reports have provided models for the structural configuration at the GaN/AlN surface, no direct evidence has clearly revealed the surface reconstruction for c-plane surfaces. For direct atomic structure identification, scanning transmission electron microscopy (STEM) should serve as an ideal tool.