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Dependence of avalanche-induced minority current on multiplication factor

The mechanism proposed by Matsunaga et al. to explain their observation of the injection of minority carriers into the substrate of a saturated n-channel MOST does not explain similar experimental results obtained using n-p-n bipolar transisitors. The alternative optical model proposed by Childs et al. does, however, apply to both measurements if it is assumed that the probability of an electron emitting a photon when crossing a reverse-biased junction is proportional to (M n - I)/M >n, where M n is the electron multiplication factor in the junction.