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Resolution enhancement techniques for submicron deep trench processes

Due to the rapid advancements in the data storage market, the development of new technologies and mechanisms are needed to support the continued growth of data storage systems. The concept and technology of Micro Electro Mechanical Systems (MEMS) can provide opportunities to meet these demands. Correspondingly, new MEMS devices can be made commercially available by sharing the benefits of developments in data storage systems. The photolithography requirements for thin film head (TFH) processing have grown increasingly challenging. Specifically, the resolution of submicron isolated features is required in thick photoresist; resulting in aspect ratios of nearly 10 to 1. To satisfy these imaging requirements, the use of i-line reduction lithography tools with variable numerical aperture and partial coherence are necessary. This study examines the influence of NA, (sigma) , and reticle bias on critical features in a typical TFH write-layer process. Combinations of NA and (sigma) were investigated for their impact on minimum feature size, process latitude, and sidewall angle. Process latitude was quantified for each illumination condition over a range of focus and exposure conditions.