{'fraction_non_alphanumeric': 0.024595924104005622, 'fraction_numerical': 0.011946591707659873, 'mean_word_length': 4.216117216117216, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Characteristics of Amorphous Silicon Dual-Gate Thin Film Transistor Using Back Gate of Pixel Electrode for Liquid Crystal Display Driver

This paper investigated the characteristics of amorphous silicon (a-Si) dual-gate thin film transistor (TFT) using the back gate of the pixel electrode in the liquid crystal display (LCD). The dual-gate TFT has been fabricated by a conventional process of the back channel etched (BCE) inverted-staggered structure. A back gate was formed by the pixel electrode step without any extra mask. The pixel electrode of the back gate and the gate metal of the front gate were connected by a contact hole. We investigated the back channel electrical characteristics by means of the Athena and Atlas simulators. The result shows that the back channel is controlled by a back gate bias. The drain current of the TFT operating in the dual-gate mode was found to be 9.24 µA at 20 V of gate voltage and 15 V of drain voltage with a channel length of 5 µm and width of 30 µm. It was larger than the drain current of 6.72 µA at 20 V of a gate voltage and 15 V of a drain voltage in a conventional TFT. The characteristics of the large width dual-gate TFT were also investigated in regards to a LCD gate driver. The more the width is large, the more the relative current ratio is high. The suggested hydrogenated a-Si (a-Si:H) dual-gate TFT can be used for LCD driver to require a high drain current.