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Nanostructuring of Graphene on Semi-Insulating SiC

Epitaxial graphene nanoribbons were fabricated and geometrically measured via scanning electron microscope in the width range of 3...45nm in a new approach. The critical dimension measurement was improved using Monte Carlo simulations for analyzing back scattering effects of the semi-insulating substrate and gaussian convolutions. Different bias powers during oxygen plasma etching allowed the identification of under-etching depths.