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Direct Trap-Density Analysis with Junction Capacitance Transient: Trap Density Spectroscopy (TDS)

An improved method (trap density spectroscopy-TDS) is proposed to precisely determine deep level parameters even when the deep-level density is extremely large and the ionized region of the deep level is restricted in the vicinity of the depletion layer edge. This method is also capable of making correction of the crossing point between Fermi level and deep level. The superiority of the TDS is demonstrated for a large amount of EL2 in HB-GaAs crystals.