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III-V Semiconductor Waveguides And Phase-Modulators : The Localized Vapor Phase Epitaxy Approach

The vapor phase epitaxy has been used to realize a number of new GaAs and InP waveguide structures. Among them, the inverted rib structure has been used in order to fabricate GaAs homojunction phase modulators. The structures have been analyzed with two-dimensional numerical methods, allowing for an accurate modelling and optimization of the device. The potentialities of similar heterojunction phase modulators for both the GaAs and InP systems are discussed.