{'fraction_non_alphanumeric': 0.024870466321243522, 'fraction_numerical': 0.015544041450777202, 'mean_word_length': 4.682352941176471, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
SiC X-Ray Detectors for Spectroscopy and Imaging over a Wide Temperature Range

The advantages of using Silicon Carbide for X-ray spectroscopy and imaging has been examined over the existing semiconductor detectors. Several SiC detectors have been manufactured and tested. They are constituted by Schottky junctions on a low doped (5x10) n-4H-SiC epitaxial layer. The diodes show extremely low reverse current densities at room temperature (≤5 pA/cm) up to mean electric field of 100 kV/cm in the depleted region. These currents are two order of magnitude lower with respect to the best junctions on Silicon used for X-ray spectroscopy, so making SiC detectors extremely low noise devices. Using a pixel detector a noise of 415 eV FWHM at room temperature has been measured. Moreover for the first time an X-ray spectroscopy at high temperature has been demonstrated using a semiconductor: the SiC detector has been operated at 100°C, showing a noise of 1 keV FWHM.