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Multi-physics field coupling simulation modeling and analysis of StakPak insulated gate bipolar transistor device

StakPak insulated gate bipolar transistor (IGBT) modules, which have complex internal structures and double-sided heat dissipation characteristics, represent a complex physical environment with multi-physical field coupling under normal working conditions. This makes it difficult to provide an accurate evaluation of the important reliability parameters of the devices contained in these modules, such as the device thermal resistance and junction temperature. In this paper, ANSYS software is used to model and perform a finite element analysis of single-chip StakPak IGBT modules. The heat flux ratio between the collector and emitter of the IGBT chip is calculated via a simulation; the overall power consumption of the module is then divided into two parts, and the thermal resistance values of the two electrodes, the overall temperature and the stress distribution of the IGBT chip and the StakPak device are simulated and calculated. The relationship between the heat dissipation ratio of the two electrodes and the thermal resistance is studied with respect to pressure, temperature and other factors.