{'fraction_non_alphanumeric': 0.015228426395939087, 'fraction_numerical': 0.004230118443316413, 'mean_word_length': 5.5, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Deep subwavelength mask assist features and mask errors printability in high NA lithography

As silicon processes scale toward the 45 nm node using conventional 0.25 magnification, widths of sub-resolution assist feature (SRAF) and printable defects on photomasks drop far below the ArF laser wavelength. Adoption of polarized illumination and higher numerical aperture (NA) could invalidate the scaling relations we used in the past to determine which small mask features or errors will print on wafers. Polarization interaction with small mask features may also plays a role in mask inspection. As mask features shrink below the wavelength, differences between the optical systems used for inspection and printing become more significant, and may affect the rules for disposition of inspection results. The data presented here combines experimental results from high NA imaging of sub-wavelength SRAF and defects, with rigorous calculation of their images based on vector diffraction. The printability of these deep subwavelength mask feature determines the requirements of optical model's rigorousness for SRAF design rule and also mask defect inspection and repair capabilities.