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The light crosstalk suppression between adjacent pixels in polarization-integrated infrared detectors

The polarization-integrated infrared detector (PIID) can effectively improve the detection and recognition ability of the target by utilizing the significant difference in polarization between the artificial target and the natural background. However, the existing PIID generally has a problem that the light crosstalk between adjacent pixels is relatively high, as a result, the polarization extinction ratio is lowered. In this paper, we use the finite element method (FEM) to build the physical model of PIID (3-5um) detector based on InAs/GaSb II superlattices (T2SLs) and simulate the influence of varied grating parameters (array period, line width, thickness, metal materials, etc.), channel passivation layer, substrate thickness and pixel size on the light crosstalk of adjacent pixels under front and back illumination. The calculation results show that reducing the grating array period, increasing the grating line width and thickness, increasing the pixel size, reducing the substrate thickness and the channel width can effectively suppress the light crosstalk between adjacent pixels and improve the device extinction ratio. However, increasing the polarization extinction ratio brings the problem of reducing the quantum efficiency of the device. Integrated optical design of our follow-up work in this paper such as reflection film, anti-reflection film, and light field control in different functional areas of the device is being considered. PIID with high extinction ratio and high quantum efficiency can be simultaneously obtained by electron beam lithography.