{'fraction_non_alphanumeric': 0.03945111492281304, 'fraction_numerical': 0.018010291595197257, 'mean_word_length': 4.835, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Aluminium-doped n-type ZnS nanowires as high-performance UV and humidity sensors

Controlling the electrical transport properties of II–VI nanostructures is vital to their practical applications. Here, we report the synthesis of n-type ZnS nanowires (NWs) by using aluminium (Al) as a dopant via a simple thermal co-evaporation method. The conductivities of the ZnS:Al NWs were greatly enhanced upon Al doping and could be further tuned in a wide range of 3 orders of magnitude by adjusting the doping level. Field-effect transistors (FETs) fabricated from individual ZnS:Al NWs revealed an electron concentration up to 1.3 × 1018 cm−3 in the NWs. Significantly, the doped NWs showed great potential as visible-blind UV sensors with an extremely high responsivity of 4.7 × 106 A W−1, giving rise to a large gain-bandwidth (GB) of ∼0.1 GHz. The high sensitivity of the ZnS:Al NWs to humidity was also investigated; the devices displayed a resistance variation of about 2 orders of magnitude in the relative humidity (RH) range of 50–90%. Our results demonstrate that the n-type ZnS:Al NWs have important applications in nanoelectronic and nano-optoelectronic devices.