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Normal-incidence infrared modulators based on InAs/GaSb/AlSb quantum wells grown by molecular beam epitaxy

We report normal incidence infrared electroabsorption modulation utilizing the Stark effect to induce (Gamma) -L transitions in asymmetric AlSb/InAs/Al0.4Ga0.6Sb/GaSb/AlSb quantum wells on a undoped GaSb substrate grown by molecular beam epitaxy. The normal incidence measurements of the fabricated devices were performed under various electric fields at T equals 77K using a Fourier transform infrared spectrometer. The modulation absorption was found to be directly proportional to applied bias. The largest infrared absorption at 5 micrometers with an absorption coefficient of 3200 cm-1 was obtained at 14 V reverse bias. Our results indicate the potential of this novel structure for application in normal incidence modulators.