{'fraction_non_alphanumeric': 0.02435897435897436, 'fraction_numerical': 0.0, 'mean_word_length': 5.850877192982456, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Density of impurity states and donor-related optical absorption spectra of GaAs-(Ga,Al)As semiconductor heterostructures

A variational procedure in the effective-mass approximation was used in the study of both the density of donor states and the associated optical absorption spectra of GaAs-(Ga,Al)As semiconductor heterostructures. Calculations were performed for a finite, cylindrical-shaped quantum box of GaAs within the infinite-barrier approximation and considering an homogeneous distribution of impurities within the low-dimensional heterostructure. Theoretical results for the density of impurity states and donor-related optical absorption spectra were found to be in good agreement with previous studies in the limiting cases of quantum wells and quantum-well wires.