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Development of SiC BJT based PWM Inverter for renewable energy resources

Silicon Carbide (SiC) BJT switch is attractive for inverters because it does not have the thermal runaway and slow switching problems associated with Si BJTs. This paper investigates the potentials of SiC BJT based PWM inverter for renewable energy resources. The static and switching characteristics of SiC BJT are simulated using MATLAB. Comparisons are carried out with a state-of-the-art Si IGBT with the emphasis on total losses. The simulation results are verified with experimental data. It is found that SiC BJT has much smaller conduction and switching losses than the Si IGBT. A prototype of BITSiC1206 BJT inverter switched at 100 kHz has been developed by employing a novel inverted sine carrier PWM technique. This method is compared with the conventional PWM in terms of THD and switching losses. The proposed modulation technique is implemented using a FPGA processor so that better resolution is achieved in the control of inverter output voltage magnitude and it is verified experimentally.