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Photoluminescence and structural analysis of wurtzite (ZnO)1−x(V2O5)x composite

This paper demonstrates the structural, vibrational and photoluminescence characteristics of (ZnO)1−x(V2O5)x (x = 0, 3, 6 and 9 mol%) composites semiconductor synthesized by using the solid state reaction method. X-ray diffraction (XRD) studies show that (ZnO)1−x(V2O5)x composites have the poly crystalline wurtzite structure of hexagonal ZnO. It is found from the XRD results that the lattice constants and the crystallite size increase while the dislocation density decreases with increase in doping concentration. The existence of E1 (TO) and E2 (high) Raman modes show that the ZnO still preserve wurtzite structure after doping vanadium oxide, which is in agreement with XRD results. Room temperature photoluminescence (PL) exhibit near band edge and broad deep level emission while indicating the suppression of deep level emission with the incorporation of V2O5 up to a certain concentration (x < 9). Moreover, the optical band gap increase with doping, which is accompanied by the blue shift of the NBE emission.