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An electrothermal BSIM3 model for large-signal operation of RF power LDMOS devices

An electrothermal BSIM3 model for large-signal operation of RF power LDMOS devices has been developed. The physically-based model was carefully calibrated to pulsed current/voltage characteristics and bias-dependent capacitance measurements. Internal matching networks and influence from the package were included in a physical way. The implemented electrothermal coupling exhibited good numerical stability during large-signal operation and the model correlates well to measurements of RF functional characteristics.