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Low Sheet Resistivity of Transparent Ga-Doped ZnO Film Grown by Atmospheric Spray Pyrolysis

Ga-doped ZnO film on polyethylene terephthalate film was successfully grown at 150 °C by conventional atmospheric spray pyrolysis using diethylzinc-based solution. The samples had an average optical transmittance of more than 80% and were strongly a-axis orientated according to the result of optical transmittance and X-ray diffraction analyses, respectively. The n-type Ga-doped ZnO films had a low sheet resistivity of 250 Ω/□ at an optimal Ga content of 1 at. % upon UV irradiation.