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Properties of S Implanted in GaAs Activated Using As-Doped a-Si:H Encapsulant Films

Implantation of S+ ions into GaAs was performed under the conditions of energy of 120 keV and doses of 3×1013–1×1015 cm-2. The GaAs was capped with an 80 nm thick a-Si:H film into which As was doped at a concentration of 2×1020 cm-3. Then, the samples were annealed in Ar gas at 850–1000°C for 15 min. The As-doped a-Si:H film did not crack even after it was heated to a high temperature such as 1000°C. The sheet carrier concentrations were approximately proportional to the square root of the implantation dose. The diffusivity of S can be represented by the equation De=D1 [ K'Q2/(1 + K'Q2 )] , where K' is a constant,Q is the implantation dose, and D1 is the diffusivity of a mobile complex.