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Temperature-dependent millimeter-wave scalable large-signal model for 90nm CMOS

In this paper, the development of a temperature-dependent large signal model, with scalable device sizes at millimeter-wave frequencies, for 90 nm CMOS has been described. The method of incorporating parasitics and internal model parameters as polynomial functions of temperature and device size has been demonstrated and validated for the first time. Extensive model validation was performed by implementing the model in a three-stage 60 GHz power amplifier design and observing excellent agreement with measured performances.