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Impact of LPCVD TEOS Thickness on Vt-Pushout in Flash Memory Cell due to Mechanical Stress

This paper reports on the dependence of cycling or endurance in flash memory with the stress induced by low-pressure chemical vapor deposition (LPCVD) process. The deposited 12.5nm tetraethyl orthosilicate (TEOS) layer served as sacrificial oxide during source/drain (S/D) implantation, which was then subsequently removed. However, this deposited TEOS layer has been found to induce a stress on the channel which affects the flash memory cycling or endurance performance.