{'fraction_non_alphanumeric': 0.022598870056497175, 'fraction_numerical': 0.022598870056497175, 'mean_word_length': 5.752380952380952, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
(110) Substrates for ZnSe on GaAs Heteroepitaxy

In this letter we present definitive evidence that the ZnSe epitaxial layer grows far better on GaAs(110) than on conventional GaAs(100) substrates. This evidence was derived from channeling measurements of 2 MeV He ions along major crystalline directions; the ZnSe on GaAs(100) system exhibited a large interface disorder peak in channeling backscattering spectra, whereas the ZnSe on GaAs(110) system gave smooth and featureless spectra. We deduce the quantitative interface disorder from the result of the measurements, and discuss a possible correlation between the interface structure and the charge neutralization problem of this heteroepitaxial system.