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Ordering of low-density Ge quantum dot on patterned Si substrate

We present a study on the growth of a low-density ordered Ge quantum dot (QD) on a nanohole patterned Si (0 0 1) substrate with periods in the order of microns by molecular beam epitaxy. Ordered Ge QDs with different periods were realized, the largest period being 15 µm. From the height-profile evolution of the QD with Ge deposition, it was found that the nanohole filling started at the initial Ge deposition, indicating an immediate nucleation and growth of QDs inside the nanoholes. Such a phenomenon is attributed to a lower surface chemical potential (SCP) inside the nanoholes, which is supported by calculated results on SCP evolution with growth and verified by the observation that the Ge adatoms around the nanoholes exhibited a higher probability of being incorporated into the nanoholes. In this scenario, low density ordered Ge QDs with any large periods could be achieved. The optical properties of the Ge QDs showed a remarkable improvement after a post-growth rapid thermal annealing treatment.