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Atomistic simulation of band-to-band tunneling in SiGe: Influence of alloy scattering

We present atomistic simulation results of band-to- band tunneling (BTBT) in SiGe random alloy. We use the non- equilibrium Green's function (NEGF) method to extract BTBT generation rates for different mole fractions, crystal orientations, and electric field strengths. The results show that alloy scattering plays an important role in the indirect BTBT of SiGe alloy and should not be neglected. Also, we improved the analytical BTBT model based on the atomistic simulation results.