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Preliminary first principle based electro-thermal coupled solver for silicon carbide power devices

The electrical behavior of high power, high frequency power devices is dramatically affected by heat generation caused due to interactions between energetic electrons and the lattice. It is critical that these interactions are taken into account when attempting to predict the electrical behavior of these devices. Since the hydrodynamic model follows the mass, momentum and energy transfer between the electrons/holes and phonons, it is capable of simultaneously predicting the electrical and thermal performance of these devices. This model is accurate and computationally efficient when properly correlated material parameters are available. In this work, a preliminary hydrodynamic transport device solver capable of accurately predicting the thermal and electrical performance of SiC devices is presented.