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Vapor Phase Epitaxial Growth of Highly Conductive P-Type ZnSe Films with Codoping of P and Li

Highly conductive p-type ZnSe films were grown at 450–500°C onto (100)GaAs by vapor phase epitaxy with codoping of P and Li. Vapors of Zn, Se and impurities were transported separately to the vicinity of the substrates. Hall effect measurement revealed that p-type films were degenerate. When either only P or Li was doped, the resistivity was very high and its conductivity type was unknown. The SIMS analysis showed a uniform profile of both impurities in the p-type epitaxial film: the Li concentration was estimated as 1019 cm-3; P was an order of 1018 cm-3 with the aid of EPMA.