{'fraction_non_alphanumeric': 0.024251069900142655, 'fraction_numerical': 0.025677603423680456, 'mean_word_length': 5.104347826086957, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
High Devitrification Growth Rate in As-Doped Oxide Film on Silicon-Dioxide Layer

Devitrification growth rates in As-doped oxide films on SiO2 substrates were measured using an optical microscope. Comparisons were then made with growth rates on Si and Si3N4 substrates. Subsequent to heat-treatment at 1050°C, 1100°C, and 1150°C, it was found that devitrification rates on SiO2 substrates were higher than those on Si and Si3N4 substrates. From the relation between devitrification growth size and heating time on three kinds of substrates, it has been concluded that the devitrification growth rates in As-doped oxide films depend both on the values of activation energies, and of incubation periods.