{'fraction_non_alphanumeric': 0.04265402843601896, 'fraction_numerical': 0.016587677725118485, 'mean_word_length': 5.353383458646617, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Initial Stages of Cubic GaN Growth on the GaAs(001) Surface Studied by Scanning Tunneling Microscopy

Nitridation of the GaAs(001) surfaces using an N-atom radio-frequency plasma source is investigated by in situ scanning tunneling microscopy (STM). Atomically flat (3×3) nitrided surfaces commensurate and coherent with the substrate have been achieved on the As-rich (2×4) and (2×6) surfaces. Nitridation proceeds via competing mechanisms of (3×3) ordering and step-etching caused by the N-atoms. The former simply involves N-As exchange, which does not require significant morphology modification, whereas the latter causes the roughening of the substrate under the standard GaN growth conditions. On the Ga-rich surface, the GaN islands immediately form at the step-edges, suggesting the possibility of self-assembled nanostructures of GaN.