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Ensemble Monte-Carlo simulation of resistive switching in HfO2/TaN/TiN stack

In this paper, we present the ensemble Monte Carlo simulation of resistive switching for the Pt/HfO2/TaN/TiN structure. In simulation, we found that in oxide thickness 10 nm conductive filament formed at -4.4 V which was close to obtained experimental value -4.2 V. Detailed description of used Monte-Carlo algorithm is also presented.