{'fraction_non_alphanumeric': 0.05889014722536806, 'fraction_numerical': 0.04303510758776897, 'mean_word_length': 5.054794520547945, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Epitaxial growth of semipolar InN() on LaAlO3 substrate: Epitaxial relationship analysis

Epitaxial semipolar InN() crystals were grown on a LaAlO3(112) substrate using radio frequency plasma-assisted molecular beam epitaxy without any interlayer. The lattice mismatch between InN and LaAlO3 was estimated to be −7.75% along the []InN direction and 0.2% along the []InN direction. The InN film is epitaxic with the LaAlO3 substrate, with orientation relationships between InN() ∥ LaAlO3(112) and []InN ∥ []LAO. InN grown on LaAlO3(112) appears () plane orientated, with two types of domains. Semipolar InN() layers can be grown at 510 °C and show X-ray rocking curve FWHMs of 1830 and 1408 arcsec for InN(0002) and InN(), respectively. However, InN grown at 510 °C has the highest peak intensity and the narrowest FWHM of the prepared samples, indicating high-quality crystal growth.