{'fraction_non_alphanumeric': 0.01818181818181818, 'fraction_numerical': 0.0, 'mean_word_length': 5.97887323943662, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Spintronics Materials and Devices for Working Memory Technology

Spintronics devices such as magnetic tunnel junctions (MTJs) are the only known nonvolatile devices with sufficiently high endurance that satisfies the mandatory requirement for nonvolatile working memory. By developing nonvolatile spintronics working memories along with the ways in which they are used in information and communication technology (ICT) systems and information infrastructure, technology realizing ultralow-power information communication infrastructure with disaster tolerance can be obtained. In addition, by embedding spintronics nonvolatile memory technology in Internet-of-Things (IoT) edge devices and sensors, distributed processing at the edge is enabled, which makes it possible to process information in real time as well as achieve flexible autonomous adaptation among edge devices. With such a new class of working memories, we believe that a paradigm shift of ICT infrastructure can be realized.