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A Model of Nonequilibrium Charge-Carrier Recombination in Semiconductors Containing Nonuniformities

A model of nonequilibrium charge-carrier recombination in semiconductors with nonuniform inclusions is suggested which takes into account the fraction of the crystal volume occupied by them and the bending of the potential relief near them. The use of the model conceptions developed allows to explain correctly some experimental results which does not seem to be possible within the framework of the Hall-Shockley-Read statistics or the theory of charge-carrier recombination in nonuniform semiconductors. 
 
 
 
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