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Room-Temperature Observation of Excitonic Absorption in GaxIn1-xAs/InP (0.2≤x≤0.47) Quantum Wells Grown by Chemical Beam Epitaxy

GaxIn1-xAs/InP (0.2≤x≤0.47) lattice-matched and strained quantum wells having 10 wells were grown by chemical beam epitaxy (CBE). The absorption properties were investigated and excitonic absorption peaks were clearly observed at room temperature. The wavelengths of excitonic peaks were in good agreement with a theoretical estimation obtained by using effective mass approximation including heavy and light hole energy split at the Γ point.