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Measurements of thermal transport in low stress silicon nitride films

We have measured the thermal conductance, G, of ≈1 μm thick low stress silicon nitride membranes over the temperature range, 0.06 4 K, G is independent of surface condition indicating that the thermal transport is determined by bulk scattering. For T<4 K, scattering from membrane surfaces becomes significant. Membranes which have submicron sized Ag particles glued to the surface or are micromachined into narrow strips have a G that is reduced by a factor as large as 5 compared with that of clean, solid membranes with the same ratio of cross section to length.