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Effect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV-Photodiodes

4H-SiC UV-photodetectors based on full-epitaxial p +p-n+ multilayer structures werefabricated. The diodes were irradiated with fast neutrons up to the fluence of 1·1014 cm-2 . Current-voltage characteristics, life time of non-equilibrium charge carriers as well as photosensitivityspectra of the diodes before and after irradiation were investigated. The studies showed that PiNUV-photodiodes with base doping below 1·1015 cm-3 retain their performance up to the fluence of5·1012 neutrons per cm2 . The further increase in fast neutron fluence stimulates the creation ofexcessive deep recombination centers. This leads to degradation of I-V-characteristics, reduction ofcarrier life time and, consequently, to degradation of the photosensitivity of devices.