{'fraction_non_alphanumeric': 0.023166023166023165, 'fraction_numerical': 0.03732303732303732, 'mean_word_length': 4.8059701492537314, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A Study on Transimpedance Amplifier in 0.35 µm CMOS Technology

This paper presents a design of the transimpedance amplifier using 0.35µm CMOS technology. In the proposed transimpedance amplifier, feedback resistor RF of conventional transimpedance amplifier has been replaced by NMOS transistor as an active feedback resistor. This circuit operates at 3.3V power supply voltage and for a photocurrent of 0.5µA.The proposed transimpedance amplifier having low noise, high gain and large dynamic range. The simulated results of transimpedance gain in single stage and three stage transimpedance amplifiers is 4.43 MΩ and 4.39 MΩ at gate voltage of 0.4V. Power dissipation of single stage and three stage transimpedance amplifier is 602.04 µW and 1.781mW at gate voltage of 2.0V.