{'fraction_non_alphanumeric': 0.026442307692307692, 'fraction_numerical': 0.004807692307692308, 'mean_word_length': 5.457364341085271, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Electron-impact single ionization of Si+

Electron-impact single ionization is studied in the Si+ ion by considering transitions among energy levels. The study includes excitation-autoionization (EA) and collisional ionization processes. The excitations are investigated up to shells with the principal quantum numbers n ≤ 10. It is shown that correlation effects included in the EA calculations play a crucial role in explaining measurements. The correlation effects diminish the EA cross sections by ∼30% compared to single-configuration calculations. However, the collisional ionization is not significantly affected by an extension of the basis of interacting configurations. Good agreement between the presented level-to-level distorted wave data and experimental measurements is found for the single ionization of the Si+ ion.