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Temperature effect on the buried double junction color detector behavior

In this paper, we present a study of the buried double pn junction color detector dark current to take a more comprehensive view of the dominant mechanisms. For this purpose a variety of BDJ test cells with different dimensions have been designed and manufactured in AMS' 0.35mum CMOS process. Reverse current-voltage characteristics and temperature dependence are used to distinguish the different mechanisms that contribute to the BDJ dark currents. We found that tunneling effect is the dominant mechanism for the shallow junction dark current, while for the deep junction thermal Shockley-Read-Hall generation is the main mechanism