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Behavior of Transition into Inductively Coupled Plasma Mode with Internal Radio Frequency Multiturn Antenna

The transition between capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) was investigated using a chemical vapor deposition (CVD) system with an internal RF multiturn antenna. Repeated transitions were generated for the first time, but for a single standard transition. A single standard transition showed a flat threshold dependence on gas pressure (10–100 Pa) in Ar gas and a marked increase at approximately 1.5–8 Pa. On single standard transition, the amounts of increases in electron temperature and density induced by the transition into ICP were almost three fold and double figures higher, respectively. The time evolution of transition was 8 µs at 10 Pa, which became longer with an increase in gas pressure in inverse proportion to electron temperature and density. The trigger of the sudden transition to the ICP mode from the CCP mode was considered to be due to the increase in electron temperature.