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Studies of Interface Formation and Its Influence on Optical Properties of GaInAs/InP QW Structures

It is a well-known phenomenon that the luminescence energies of nominally n monolayer (1 ML = 0.239 nm) thick QWs of GalnAs in InP are shifted to longer wavelengths in comparison to calculated values. The reason is seen in the formation of (Ga)InAs(P)-interfaces, one or a few ML thick, which contribute to the effective potential of the QW.Based on a comparison of MBE and MOVPE and on properties of QW structures grown by MOVPE under different conditions we conclude that high AsH 3 pressures and low growth temperatures favour the formation of arsenic multilayers on the surface, which act as the main arsenic source for the formation of graded InAs x P 1−x interface layers.