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Physical Models for Deep Submicron Device Simulation

An impact ionization model is derived for silicon with anisotropic and nonparabolic band structure. The validity of the model is verified by comparing calculated and experimental results on both impact ionization coefficient and quantum yield. A phenomenological length constant for the extended drift-diffusion model is evaluated using an iterative method based on the Boltzmann transport equation. The length constant increases with applied electric field at low field and flattens out above 30 kV/cm, reaching a saturation value of 400 Å.