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Enhancing the Performance of Electret-Free Phototransistor Memory by Using All-Conjugated Block Copolymer.

Conjugated polymers are of great interest owing to their potential in stretchable electronics to function under complex deformation conditions. To improve the performance of conjugated polymers, various structural designs have been proposed and these conjugated polymers are specially applied in exotic optoelectronics. In this work, a series of all-conjugated block copolymers (PII2T-b-PNDI2T) comprising poly(isoindigo-bithiophene) (PII2T) and poly(naphthalenediimide-bithiophene) (PNDI2T) were developed with varied compositions and applied to electret-free phototransistor memory. Accordingly, these memory devices presented p-type transport capability and electrical-ON/photo-OFF memory behavior. We revealed the efficacy of the all-conjugated block copolymer design on improving the memory-photoresponse properties in phototransistor memory. By optimizing the composition of block copolymer, the corresponding device achieved a wide memory window of 36 V and a high memory ratio of 7 × 104 . Collectively, the results of this study indicate a new concept on designing electret-free phototransistor memory by using all-conjugated block copolymer heterojunctions to mitigate the phase separation of conjugated polymer blends. Meanwhile, the intrinsic optoelectronic properties of the constituent conjugated polymers can be well-maintained by using an all-conjugated block copolymer design. This article is protected by copyright. All rights reserved.