{'fraction_non_alphanumeric': 0.026077097505668934, 'fraction_numerical': 0.030612244897959183, 'mean_word_length': 4.696774193548387, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 1, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Development of low-threshold current stripe lasers from GaInAsSb/GaAlAsSb DH wafers emitting at 2.2 μm

We report the Ga0.86In0.14As0.13Sb0.87 room temperature refractive index value obtained from direct reflectivity measurements and also estimated from laser transverse far field pattern measurements. The value n equals 3.78 obtained is higher than previous theoretical calculations and is high enough to support a good optical confinement in DH lasers with 27% Al in the confining layers. We also show that the active layer low resistivity gives the main contribution to the high threshold current (Ith) for narrow stripe lasers. This is partly solved by making the active region n-type. The minimum Ith obtained for n-type active layer lasers was 290 mA compared to 800 mA for p-type active layer lasers, the broad area threshold current being the same (3 kA/cm2) in both cases.