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A Magnetic Tunnel Junction Compact Model for STT-RAM and MeRAM

This report presents a compact model of a magnetic tunnel junction (MTJ) for use in the design and simulation of spin-transfer torque (STT) and magnetoelectric random access memory (MeRAM). In STT-RAM, the magnetic state of an MTJ is switched by applying a spin-polarized current through the junction. In MeRAM, the MTJ state is manipulated primarily by a voltage-induced electric field. Both of these competing state-of-the-art non-volatile magnetic memory technologies offer significant area and energy advantages over traditional SRAM, DRAM, and Flash memories. In this work, the physics behind an MTJ is explored to develop a Verilog-A model that captures the switching dynamics and accounts for the following phenomena: spin-torque, field-like torque, external magnetic fields, shape anisotropy, the voltage-controlled magnetic anisotropy (VCMA) effect, and thermal noise. Simulations were performed in Cadence to confirm correct switching operation of an STT-RAM MTJ and junctions designed for MeRAM switching in both the precessional and thermally activated regimes.