{'fraction_non_alphanumeric': 0.01520086862106406, 'fraction_numerical': 0.002171552660152009, 'mean_word_length': 5.358620689655172, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Characterization of the Silicon Substrate Considering Frequency-Dependent Parameters in TSV-Based 3-D ICs

In this paper, the characterization of silicon substrate is investigated based on related frequency-dependent parameters induced by the TSV as well as the silicon substrate. It is the first time to classify the frequency regions according to the nature of silicon substrate with a quantitative standard of calibration by the impedance ratio of capacitance to resistance. Furthermore, parametric studies are performed to examine the influence of different physical parameters including the doping concentration and the TSV pitch along with the frequency on the silicon substrate. The present work provides an in-depth understanding of the core physics of the silicon substrate with the variation of frequency, and serves as an important guidance for parametric analysis and design verification in TSV-based 3-D ICs.