{'fraction_non_alphanumeric': 0.026352288488210817, 'fraction_numerical': 0.0013869625520110957, 'mean_word_length': 5.5636363636363635, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Dynamic C-V and G-V characteristics of metal-insulator-semiconductor capacitor with Au nanocrystals and high-K tunneling layer

The charge storage and dynamic characteristics in a metal-insulator-semiconductor (MIS) capacitor with Au nanocrystals (NCs) using capacitance-voltage and conductance-voltage measurements are investigated. the HfSiO2 stacked structure embedded with Au NCs has been demonstrated for application in memory devices. The high frequency C-V shows the significant charge storage resulted in hysteresis characteristics. In order to advance analyze the trap induced admittance and charge exchange effect in these samples, we will utilize single energy level trap model to extract the trap conductance.