{'fraction_non_alphanumeric': 0.024495677233429394, 'fraction_numerical': 0.002881844380403458, 'mean_word_length': 4.791666666666667, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Atomic-Layer Control in GaP Growth by Laser-Triggered Chemical Beam Epitaxy

Control of GaP growth at the atomic-layer level has been achieved by laser-triggering in chemical beam epitaxy (CBE) under a simultaneous supply of triethylgallium (TEGa) and thermally cracked PH3. The growth rate of GaP was enhanced at low substrate temperatures by ultraviolet (UV) light emitted from a N2 laser. The growth rate is controlled by either the TEGa supply between laser pulses or the photon number, and it shows saturation with a high TEGa supply. This preliminary result will open a new atomic-layer epitaxial mode by means of UV-laser irradiation without an alternating supply of source gases in CBE.