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White Light Generation from Electroluminescence Devices Using TPD:PMMA/QDs/Alq3

Quantum dots of CdSe, CdS and ZnS QDs were prepared by chemical reaction and used to fabricate organic quantum dot hybrid junction device. QD-LEDs were fabricated using layers of ITO/TPD: PMMA/CdSe/Alq3, ITO/TPD: PMMA/CdS/Alq3 and ITO/TPD: PMMA/ZnS/Alq3 devices which prepared by phase segregation method. The hybrid white light emitting devices consists, of three-layers deposited successively on the ITO glass substrate; the first layer was of N, N’-bis (3-methylphenyl)-N, N’-bis (phenyl) benzidine (TPD) polymer mixed with polymethyl methacrylate (PMMA) polymers. The second layer was QDs while the third layer was tris (8-hydroxyquinoline) aluminium (Alq3). The results of the optical properties show that the prepared QDs were nanocrystalline with defects formation. The calculated of energy gaps from photoluminescence (PL) spectrometer were 2.38, 2.69 and 3.64 eV for CdSe, CdS and ZnS respectively. The generated white light has acceptable efficiency using confinement effect which makes the energy gap larger, so that the direction of the light sites are toward the center of white light color. The hybrid junction devices (EL devices) were characterized by room temperature PL and electroluminescence (EL). Current-voltage (I–V) characteristics indicate that the output current is good compared to the few voltages ( 8-10.3 V) used which gives acceptable results to get a generation of white light. The EL spectrum reveals a broad emission band covering the range from 350 - 700 nm. The emissions causing this white luminescence were identified depending on the chromaticity coordinates (CIE 1931). The correlated color temperature (CCT) was found to be about 6250, 5310 and 5227K respectively. Fabrication of EL-devices from semiconductors material (CdSe, CdS and ZnS QDs) with hole injection organic polymer (TPD) and electron injection from organic molecules (Alq3) was effective in white light generation