{'fraction_non_alphanumeric': 0.0244140625, 'fraction_numerical': 0.0, 'mean_word_length': 5.57051282051282, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States

Capacitance-voltage (CV) measurements on MOS structures are inherently difficult to analyze due to the socalled stretch-out, which results from defects becoming charged during the slow sweep and shifts the CV curve to lower or higher voltages without otherwise changing its shape. This stretch-out dramatically interferes which the actual target of the measurement, the extraction of the contribution of traps to the frequency-dependent small signal capacitance, potentially resulting in enormous spurious contributions to the extracted defect densities. Assuming that the slow states responsible for this stretch-out are normally distributed in energy, we suggest a simple correction algorithm and demonstrate its applicability using experimental NBTI/PBTI data on nMOS/pMOS devices to evaluate the creation of the various defect types as well as their work-function dependence.