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Effect of the Ti/TiN bilayer barrier and its surface treatment on the reliability of a Ti/TiN/AlSiCu/TiN contact metallization

The use of an AlSiCu/TiN bilayer for the metallization of 1.0‐μm‐diam and 1.4‐μm‐deep straight wall contacts to 0.2‐μm‐deep n+ and p+ diffusions, results in a n+/p− and a p+/ṇ− junction leakage lower than 10 pA even after nine heat treatments (60 min each) at 450 °C. However, there is a very important degradation of the contact chain resistance statistics at small contact size. On the other hand, the use of a Ti/TiN bilayer barrier under the AlSiCu/TiN interconnect maintains a n+/p− and a p+/n− junction leakage lower than 20 pA and prevents the degradation of the contact chain resistance statistics after the nine heat treatments. It is finally demonstrated that a vent in nitrogen followed by a momentary air exposure of the Ti/TiN bilayer barrier results in larger contact resistance than a vent in nitrogen followed by a one hour long air exposure of the Ti/TiN bilayer barrier before the deposition of the AlSiCu/TiN interconnect.