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Communication—Defect-Free Filling of High Aspect Ratio Through Vias in Ultrathin Glass

We report an all-solution, simple process (DC plating with single additive) for metallizing high aspect ratio (AR = 5 and AR ∼ 12) through vias in ultrathin glass (thickness ∼ 100 um). Highly uniform and continuous Cu seed layer is ﬁrst achieved by a simple surface modiﬁcation, Sn/Pd catalyst adsorption and Cu electroless plating. Subsequently, the vias are ﬁlled by DC plating in the presence of a single additive nitrotetrazolium blue chloride (NBT). The strong inhibition effect of NBT is exploited to ﬁrst bridge the center of the vias followed by ﬁlling of two blind vias.