{'fraction_non_alphanumeric': 0.025110782865583457, 'fraction_numerical': 0.004431314623338257, 'mean_word_length': 5.712871287128713, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Surface photoconductivity of organosilicate glass dielectrics induced by vacuum-ultraviolet radiation

The temporary increase in the electrical surface conductivity of low-k organosilicate glass (SiCOH) during exposure to vacuum-ultraviolet radiation (VUV) is investigated. To measure the photoconductivity, patterned “comb structures” are deposited on dielectric films and exposed to synchrotron radiation in the range of   8–25  eV, which is in the energy range of most plasma vacuum-ultraviolet radiation. The change in photo surface conductivity induced by VUV radiation may be beneficial in limiting charging damage of dielectrics by depleting the plasma-deposited charge.