{'fraction_non_alphanumeric': 0.03768844221105527, 'fraction_numerical': 0.00628140703517588, 'mean_word_length': 4.573426573426573, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
p-Type Characteristics of Cu-Doped CdS Thin Films

The characteristics of Cu-doped CdS films have been studied. Cu was easily diffused into CdS films when CdS was deposited on a Cu film successively at 200°C. The resistivity of the films increased initially with increasing Cu doping, but decreased for values of the Cu/Cd atomic ratio over about 0.5%. The Seebeck coefficient changed from negative to positive, and the Hall coefficient also changed from negative to positive with increasing Cu doping. I-V characteristics of a cell with a CdS(Cu-doped)/CdS(non-doped) film structure showed rectification. Thus, Cu-doped CdS films show p-type characteristics. It is proposed that the Cu compensates the donor due to S-vacancies, and the conductivity type of the CdS films was converted to p-type.