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Spatial Distributions of Individual Traps in a Si/SiO2 Interface.

We have investigated individual traps in the Si/SiO 2 interface by observing random telegraph signals (RTSs). The traps having energy levels within a few k B T of the Fermi level can capture or emit single electrons, and become sources of RTSs. We report the first investigation of spatial distributions of single-carrier traps in a MOSFET with a double gate structure. We observe RTSs with changing bias voltages on two lower gates, and show that their variations describe the spatial distributions of the individual traps.