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InAsP islands at the lower interface of InGaAs/InP quantum wells grown by metalorganic chemical vapor deposition

The optical properties of narrow InGaAs/InP quantum wells and their dependence on the gas switching procedure during the metalorganic chemical vapor deposition growth process are studied. A transition from In1−xGaxAs monolayer to InAs1−xPx monolayer splitting is observed in the photoluminescence spectrum, if the AsH3 purging time of the InP surface is equal larger than 2 s. This transition is attributed to a P‐As exchange at the lower interface (InGaAs on InP) leading to InAs1−xPx interfacial islands, which are larger than the excitonic diameter.