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Noise spectroscopy of traps in GaN devices

We present the analysis of the low-frequency noise spectra of the GaN/AlGaN heterostructure field-effect transistors with generation-recombination bulges. A method of extracting information about dominant trap levels in the GaN/AlGaN heterostructures from the low-frequency noise measurements is described. Further progress in the noise spectroscopy may help improve the quality of GaN/AlGaN heterostructures.