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Wavelength-dependent J–V characteristics of CuIn1-xGax(S,Se)2 solar cells and carrier recombination

We propose here a new experimental setup, allowing the probing of CuIn1-xGax(S,Se)2 (CIGSSe) solar cells under varying wavelengths and intensities, using a supercontinuum laser. The setup is used to study the effects of potassium treatment on CIGSSe cells. Their J–V characteristics are taken at 500 nm and 950 nm, at intensities from 5 × 1014 photons cm−2 s−1 to 4 × 1016 photons cm−2 s−1. The untreated sample’s response shows strong dependence on the exciting wavelength. After potassium treatment, this dependence is a lot less important. Using simulation, we show that this difference can be explained by a reduction in the defect density in the depletion region.