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Nonquasi‐static large‐signal model of GaN FETs through an equivalent voltage approach

A new empirical nonlinear model of GaN‐based electron devices is presented in the article. The model takes into account low‐frequency dispersion due to self‐heating and charge‐trapping phenomena and provides accurate predictions at frequencies where nonquasi‐static effects are important. The model is based on the application of a recently proposed equivalent‐voltage approach and is identified by using pulsed measurements of drain current characteristics and pulsed S‐parameter sets. Full experimental validation on a GaN on SiC PHEMT is provided at both small‐ and large‐signal operating conditions. © 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2008.