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Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy

Thick Si-doped AlN layers were homoepitaxially grown by hydride vapor phase epitaxy on AlN(0001) seed substrates. Following the removal of the seed substrate, an n-type AlN substrate with a carrier concentration of 2.4 × 1014 cm−3 was obtained. Vertical Schottky barrier diodes were fabricated by depositing Ni/Au Schottky contacts on the N-polar surface of the substrate. High rectification with a turn-on voltage of approximately 2.2 V was observed. The ideality factor of the diode at room temperature was estimated to be ∼8. The reverse breakdown voltage, defined as the leakage current level of 10−3 A/cm2, ranged from 550 to 770 V.