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Carrier-Gas Induced Changes in the Structural, Stoichiometric and Photocatalytic Characteristics of Gallium Oxide Nanostructures.

Ga₂O₃/ITO/glass photoelectrodes prepared by the CVD method has rarely been tested in the electrochemical cell for water splitting. In this study, we investigate the photoelectrolytic performance of Ga₂O₃/ITO-glass photocatalysts produced by the high-temperature CVD route. The changing of N₂ carrier gas flow rate from 0 to 1800 seem induces change in the materials properties. XRD signal strength of the produced bi-phase Ga₂O₃ is observed to deteriorate, while diffraction line width broadens with increasing N₂ supply. Films show a combination of nanoclumps and nanostrips morphology. Ga/O ratio decreases, while the optical bandgap gradually increases from 4.37 to 4.42 eV with increasing O content and crystallite size. Photoluminescence measurements show UV, blue, green and red emissions, respectively. Linear sweep voltammetry of the electrodes in 0.1 M KOH electrolyte shows improvement in photocurrent density from 160 to 257 μA/cm² versus Ag/AgCl at 1 V bias, and a maximum photon-to-current conversion efficiency 0.06%.