{'fraction_non_alphanumeric': 0.01349527665317139, 'fraction_numerical': 0.005398110661268556, 'mean_word_length': 5.452173913043478, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
High frequency modeling of tapered TSV considering MOS effect and frequency-dependent behavior

In this paper, analytical expressions of parasitic of tapered TSV considering the MOS effect and frequency-dependent behavior are proposed. The formulas for tapered TSV are developed from the conventional analytical equations of RLCG for two wire transmission lines. All the proposed formulas are validated by simulation tools, and a good correlation is obtained between the formulas and simulations up to 100GHz. With the proposed formulas, the high frequency characteristic and semiconductor phenomenon of tapered TSV can be fully captured, and the performance of tapered TSV can be evaluated accurately and conveniently prior to 3D IC design.