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Joule Heating and Peltier Effects in Thermoelectric Spin-Transfer Torque Mram Devices Using Finite Element Modeling

This paper reports the Joule heating and Peltier effects in thermoelectric spin-transfer torque MRAMs (TSTT-MRAMs). The simulation was undertaken based on the current-induced magnetization switching at the MgO/CoFe magnetic tunnel junction. Thermal and heat flux distributions of the TSTT-MRAM cells were simulated and analyzed using finite-element modeling. The Joule heating and Peltier effects lead to the increases in the temperature and heat flux distributions at the magnetic tunnel junction (MTJ) as well as the thermoelectric module. The maximum temperature of Peltier effect is higher than Joule heating effect when voltage amplitude below 0.77V. Some practical data for the STT-MRAM were also reported.