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Charge hologram in Bi12GeO20 created by phonon-enhanced tunnelling from shallow traps

A technique is described for creating and studying charge transfer holograms in Bi12GeO20 based on electric field-enhanced tunnelling of carriers from shallow (<or approximately=10 meV) defect states. The hologram is formed by the superposition of stationary and propagating electric fields, one of which is derived from a 10 GHz ultrasonic wave. Selective erasure of the grating enables the trap energy distribution to be inferred.