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Element-specific gap in the p states for ternary semiconductors CuGaSe2 and ZnGeAs2 via alignment of x-ray emission and x-ray absorption spectra

X-ray emission and x-ray absorption spectra at the K-edges of ternary semiconductors CuGaSe2 and ZnGeAs2 are aligned by measuring the corresponding Kβ1,3 line in the apparatus used for recording the emission spectra and in the apparatus used for recording the absorption spectra. This makes it possible to determine the element-specific x-ray gap in the p states and to observe that this gap decreases if the electronegativity of the corresponding element increases. Additionally, spectra related to different atoms of the same compound were aligned by relying on theoretical x-ray emission bands. Calculations based on the local density approximation are able to reproduce the mutual positions of x-ray absorption bands of different elements of the same compound provided that a universal correction for the predicted onset of the conduction band is applied (by means of the so-called scissors operator).