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Polymer transfer technique for strain-activated emission in hexagonal boron nitride.

We present a hexagonal boron nitride (hBN) polymer-assisted transfer technique and discuss subtleties about the process. We then demonstrate localized emission from strained regions of the film draped over features on a prepatterned substrate. Notably, we provide insight into the brightness distribution of these emitters and show that the brightest emission is clearly localized to the underlyin-g substrate features rather than unintentional wrinkles present in the hBN film. Our results aide in the current discussion surrounding scalability of single photon emitter arrays.