{'fraction_non_alphanumeric': 0.015100671140939598, 'fraction_numerical': 0.00587248322147651, 'mean_word_length': 4.994974874371859, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Characterization of flicker noise in and nitrided MOSFETs due to low-energy backsurface gettering

Nitridation of gate dielectric in n-channel Si-MOSFETs was performed by rapid thermal annealing in either or O. Following the nitridation process the devices were subjected to low-energy gettering at 550 eV. The gettering time ranged from 10 to 40 minutes. Flicker noise across the conduction channels was characterized over a wide range of temperatures and biases. It was found that flicker noise was reduced by backsurface gettering for short gettering times for both types of device. Rebounds in the noise magnitudes are observed for long gettering times. Investigation of the temperature dependences of the noise power spectra indicates that the low-frequency noise originated from thermal activation of carriers to traps at the Si- interface. Backsurface gettering led to modifications in the energy distribution of the interface traps. The phenomenon is attributed to stress relaxation at the Si- interface. Our data show that short gettering times resulted in reductions in the Si- interface states and long gettering times led to increases in the concentration of the interface states.