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Investigation of Thermal Properties of β-Ga2O3 Nanomembranes on Diamond Heterostructure Using Raman Thermometry

The β-Ga2O3 nanomembrane (NM)/diamond heterostructure is one of the promising ultra-wide bandgap heterostructures that offers numerous complementary advantages from both materials. In this work, we have investigated the thermal properties of the β-Ga2O3 NM / diamond heterostructure with three different thicknesses of -Ga2O3 nanomembranes (NMs), namely 100 nm, 1000 nm, and 4000 nm thick β-Ga2O3 NMs using Raman thermometry. The thermal property – temperature relationships of these β-Ga2O3 NM / diamond heterostructures, such as thermal conductivity and interfacial thermal boundary conductance were determined under different temperature conditions (from 100 K to 500 K with a 40 K interval). Furthermore, we have compared our values with other reported values and predicted the multi-dimensional thermal properties-β-Ga2O3 thickness-doping concentration relationship. Our results provide benchmark knowledge about the thermal conductivity of β-Ga2O3 NMs over a wide temperature range for the design of novel -Ga2O3-based power electronics and optoelectronics.