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Optical Power Absorption Simulation of Silicon 2D-Grating Nanostructure fabricated using MACE Method

In this research we modelled a Silicon grating structure fabricated by using Metal Assisted Chemical Etching method for its optical absorption and electrical characteristics. Device fabricated using this method will not have sidewall deposition defect which is commonly found in metal deposition using evaporation methods. By using Lumerical FDTD and Charge we modelled Silicon grating photodetector device fabricated using MACE. Grating device with etching depth of 1 μm has the highest optical power absorption for illumination at 850 nm wavelength, and Silicon grating with 1 μm shows responsivity ~1.55 A/W at -2V operating voltage.