{'fraction_non_alphanumeric': 0.019908116385911178, 'fraction_numerical': 0.004594180704441042, 'mean_word_length': 5.055555555555555, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Electronic properties of GaAs - AlAs Fibonacci superlattices

We study the electronic band structure and the local density of states of different GaAs - AlAs Fibonacci superlattices grown along the [001] direction. We use an empirical tight-binding Hamiltonian including spin - orbit coupling together with the surface Green function matching method. We have analysed second-to-fifth-generation superlattices with different generating layer thicknesses. A selective localization of the local density of states in the thickest GaAs slabs is found for both the highest valence and lowest conduction band states in all of the cases considered in our study.