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Thermal Stability improvement of Nickel Germanosilicide Utilizing Ni-Ta Alloy and Co/TiN Cappling layer for Nano-scale CMOS Technology

In this paper, highly thermal stable nickel germanosilicide utilizing Ni-Ta alloy and Co/TiN capping layer (Ni-Ta/Co/TiN tri-layer) is proposed for high performance strained Si CMOS technology. The proposed Nickel Germanosilicide utilizing Ni-Ta/Co/ TiN structure exhibits low temperature silicidation and wide range of rapid thermal process (RTP) process window. Moreover, sheet resistance shows stable characteristics up to 700degC for 30 min high temperature annealing and the surface of Ni-Ta/Co/TiN structure is much smoother than that of Ni/Co/TiN structure both after RTP and post-silicidation annealing. Therefore, the thermal immune nickel germanosilicide using the Ni-Ta/Co/TiN tri-layer is highly promising for future SiGe based nano-scale CMOS technology