{'fraction_non_alphanumeric': 0.01757469244288225, 'fraction_numerical': 0.0, 'mean_word_length': 5.129032258064516, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A semiconductor model for the single quantum dot laser

The emission properties of a single quantum‐dot laser are studied on the basis of a semiconductor model. Coulomb interaction and excitation‐induced effects like dephasing and screening lead to an interplay of excitonic and biexcitonic emission contributions at the cavity frequency. In the input/output curve and photon statistics, this leads to novel features that cannot be explained in terms of atomic models for a single‐emitter laser. Rather, they are a result of the particular properties of the QD emitter.