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Highly Efficient Persistent Hole-Burning in Cuprous Halide Quantum Dots

Formation efficiencies of the persistent holes in various kinds of cuprous halides quantum dots, namely CuCl, CuBr and CuI quantum dots, embedded in glass or alkali halide crystals, were measured. The highest quantum efficiency of 0.097 was obtained at 2 K for CuCl quantum dots in glass. The persistent absorption decrease of quantum dots caused by a photon is larger than that of the most efficient ionic or molecular persistent hole-burning materials by 3 orders of magnitudes. The high sensitivity shows that the persistent hole-burning phenomenon in semiconductor quantum dots has potential for application in the multiple optical memory devices.