{'fraction_non_alphanumeric': 0.022747952684258416, 'fraction_numerical': 0.003639672429481347, 'mean_word_length': 5.179775280898877, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Charge Trapping At The Hg0.7Cd0.3Te-Anodic Oxide Interface

Infrared devices employing (Hg,Cd)Te require a surface passivation treatment that results in a stable semiconductor surface potential. Therefore, if a passivant has any charge associated with it, it is necessary that the density of this charge be reproducible and stable. In this paper we report a study of the variability of the charge density in anodic oxides in biased anodic oxide -(Hg,Cd)Te MOS structures. When these MOS structures are biased at a constant negative voltage, the oxide charge becomes progressively more positive, the shift in flat -band voltage being proportional to the logarithm of the bias time. The rate of net charge exchange between the oxide and semiconductor increases with temperature, but the system finally relaxes to a new oxide charge density which is independent of temperature. These results indicate that biased anodic oxide ( Hg,Cd)Te MOS structures are typically out of equilibrium and the relationship between gate voltage and semiconductor surface potential continues to vary under this condition.