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Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET

The mobility of channel electron, for partially depleted SOI nMOSFET in this paper, decreases with the increase of implanted fluorine dose in buried oxide layer. But, the experimental results also show that it is larger for the transistor corresponding to the lowest implantation dose than no implanted fluorine in buried layer. It is explained in terms of a "'lubricant" model. When fluorine atoms are implanted in the top silicon layer, the mobility is the largest. In addition, a positive shift of threshold voltage has also been observed for the transistors fabricated on the SOI wafers processed by the implantation of fluorine. The causes of all the above results are discussed.