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Self-aligned cobalt disilicide/silicon Schottky barrier contacts: fabrication, materials and electrical characterization

Polycrystalline cobalt disilicide films have been formed successfully on n-type (100)- and (111)-oriented silicon substrates using a relatively low technology route involving cobalt metal evaporation and a rapid thermal annealing procedure. The same procedure has been used to fabricate Schottky barrier contacts using a self-aligned silicide process. The properties of the reacted overlayers and interfaces have been examined using nuclear reaction analysis, Rutherford backscattering spectrometry, cross-sectional transmission electron microscopy, sheet resistance, I - V and C - V measurements. Examination of the contacts using optical microscopy revealed lateral silicide overgrowth which has been explained by consideration of the known growth kinetics. These results lead to explanations for non-idealities in the electrical characteristics which show ideality factors as low as 1.03 and barrier heights typically of 0.65 eV.