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High Frequency and Noise Model of Gate-All-Around MOSFETs

In this paper we study the influence of the quantum effects on DC, RadioFrequency (RF) and microwave noise for nanoscale SGT transistors including nonstationary effects. We present an analytical charge model to adjust the charge control computed from the self-consistent solution of the two-dimensional (2D) Schrödinger and Poisson equations. RF and noise performances are calculated using the active transmission line method. A comparison between classical and quantum charge control models, and between drift-diffusion and hydrodynamic transport models is carried out.