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Direct Observation of Growth Striations in a Liquid Encapusulated Czochralski GaP Crystal by Light Scattering Method

Growth striations in a liquid encapusulated Czochralski (LEC) GaP crystal doped with Te at the concentration of 6×1017 cm-3 was examined by the 90°-angle light scattering method. The growth striations were manifested as a periodical fluctuation in the scattering intensity along the growth direction in the core region of the crystal. The striations were found to be clearly correlated with chemical etching pattern, periodical Te fluctuation detected by electron-probe X-ray microanalysis and periodical cathodoluminescence signal by Te donor. The origin of the striated scattering pattern is attributed to the periodical distribution of the scattering centers formed by the preferential precipitation of excess Te on grown-in dislocations.