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Optoelectronic Properties of the p-MnZnO/n-Si Structure Photodiodes in a Strong Magnetic Field

Photodiodes with a p-MnZnO/n-Si substrate structure were fabricated. Mn-doped p-type ZnO (MnZnO) films were deposited by ultrasonic spray pyrolysis on a (100)-oriented silicon substrate. A dark current and a photocurrent of ∼4.31×10-7 and 6.95×10-4 A, respectively, were measured at a reverse bias of 2 V, and a photocurrent-to-dark current contrast ratio of almost four orders of magnitude was observed. When a p-MnZnO/n-Si structure photodiode was applied a strong magnetic field of 0.5 T, the photocurrent slightly increases to ∼1.24×10-3 A at a reverse bias of 2 V. This may be attributed to the Auger recombination effect due to the applied magnetic field.