{'fraction_non_alphanumeric': 0.02928416485900217, 'fraction_numerical': 0.03253796095444685, 'mean_word_length': 4.593939393939394, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Structure and Dielectric Properties of Barium Strontium Titanate Thin Films Grown on LSAT Substrates

Ba 0.7 Sr 0.3 TiO 3 (BST) thin films have been deposited onto (LaAlO 3 ) 0.3 (Sr 2 AlTaO 6 ) 0.7 (LSAT) single-crystal substrates by pulsed laser ablation. X-ray diffraction revealed that the BST thin films were well crystallized and epitaxially grown on the substrates with a distorted crystal structure comparing with the cubic structure of the BST ceramics. Both the in-plane dielectric constant and tunability of the thin films were found to be dependent on frequency. With increasing frequency from 50 MHz to 10 GHz, the dielectric constant under zero bias field decreases from 1072 to 645, meanwhile, the dielectric tunability under a bias field of 13.3 V/μm decreases from 33% to 20%. The results suggest that the BST films grown on the LSAT substrates are good candidates for composing tunable microwave devices.