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Analysis and Mechanism of Turn-on Current Spike of SiC MOSFETs

Silicon Carbide MOSFET(SiC MOSFET) has the ability of bi-directional conduction and intrinsic body diode. In a voltage-source converter which has bridge legs, an external anti-parallel diode can be omitted compared with Insulated Gate Bipolar Transistor(IGBT) devices. However, the converter efficiency will be reduced when taken into account body diode reverse recovery and excessive conduction voltage drop. At present, SiC MOSFETs is still paralleled by SiC Schottky Barrier Diode(SBD) for freewheeling in many applications. Although the SiC SBD has no reverse recovery current, its junction capacitance will aggravate turn-on current spike. Three methods including SiC SBD, body diode and their paralleling connection are analyzed in the paper. Modeling, analysis and experimental validation are performed to research components of the turn-on current spike and the causes of each component when changing DC link voltages and switching speeds. The results show that the switching speed has the strongest effect on the current spike. The body diode in parallel with SBD deteriorate the turn-on current spike.