{'fraction_non_alphanumeric': 0.037347560975609755, 'fraction_numerical': 0.01524390243902439, 'mean_word_length': 5.282296650717703, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Quinoid-aromatic Resonance for Very Small Optical Energy Gaps in Small-molecule Organic Semiconductors: a Naphthodithiophenedione-oligothiophene triad system.

Organic semiconductors with very small optical energy gaps have attracted much attention for near-infrared-active optoelectronic applications. Herein, we present a series of donor-acceptor-donor (D-A-D) organic semiconductors consisting of a highly electron-deficient naphtho[1,2- b :5,6- b ']dithiophene-2,7-dione quinoidal acceptor and oligothiophene donors that show very small optical energy gaps of down to 0.72 eV in the solid state. Investigation of the physicochemical properties of the D-A-D molecules as well as theoretical calculations of their electronic structures revealed an efficient intramolecular interaction between the quinoidal acceptor and the aromatic oligothiophene donors in the D-A-D molecules, which significantly enhances the backbone resonance and thus reduces the bond length alternation along the π-conjugated backbones. Despite the very small optical energy gaps, the D-A-D molecules have low-lying frontier orbital energy levels that give rise to air-stable ambipolar carrier transport properties with hole and electron mobilities of up to 0.026 and 0.043 cm 2 V -1 s -1 , respectively, in the field-effect transistors.