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Observation of Luminescent Lines Related to Pseudodirect Gap in ZnSiP2 Crystals

The photoluminescence of ZnSiP2 crystals has been measured at 4.2 K. New sharp emission lines were observed at about 1.980 eV in a sample annealed at 400°C in vacuum. The intensity of these lines is greatly enhanced by excitation at the exciton absorption peak associated with the pseudodirect gap. This indicates that these emission lines are due to the bound excitons associated with the pseudodirect gap, in contrast to the results of previous photoluminescence measurements suggesting that this crystal is an indirect-gap semiconductor.