{'fraction_non_alphanumeric': 0.02512562814070352, 'fraction_numerical': 0.005025125628140704, 'mean_word_length': 4.98, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effects in GaN films grown by MOVPE on GaAs due to the distance of heat source

We are reporting the results of an investigation about of the effects in gallium nitride films, grown on gallium arsenide (001) substrates by metalorganic vapour-phase epitaxy, due to the distance of the heat source, which is through quartz infrared lamps. The films were characterized using X- ray diffraction (XRD) and photoluminescence (PL). The results suggest that the heat source distance is a very important parameter that influence in the orientation, morphology and luminescence of the gallium nitride films.