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Experimental Evidence And Characterization Of Resonant Impurity Levels By Magneto-Transport Experiments Under Hydrostatic Pressure In HgCdTe.

The aim of this paper is to demonstrate that transport experiments under high magnetic fields and under hydrostatic pressure are a very convenient tool to characterize impurity levels in II-VI compounds. The method has been used in the cases of bulk . semiconductors and of implanted thin films. The existence of resonant impurity states has been clearly pointed out. In the particular case of boron implanted thin films the experiments demonstrate clearly the existence of a resonant level induced by implantation and located approximately at 150 meV above the conduction band minimum.