{'fraction_non_alphanumeric': 0.011494252873563218, 'fraction_numerical': 0.0, 'mean_word_length': 5.973333333333334, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A cross‐sectional scanning capacitance microscopy characterization of GaAs based solar cell structures

Scanning Capacitance Microscopy was applied in investigation of individual components of tandem solar cell. The InGaAs tunnel junction, GaAs top subcell and GaAsN bottom subcell devices were grown by atmospheric pressure metalorganic vapour phase epitaxy. It was shown that accuracy of p‐n junction position determination by SCM method depends on doping concentration of layers in structure and measurement parameters.