{'fraction_non_alphanumeric': 0.01193058568329718, 'fraction_numerical': 0.007592190889370932, 'mean_word_length': 5.688405797101449, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Structure and dielectric properties of electrochemically grown ZrO2 films.

The dielectric properties of electrochemically grown zirconium oxide films by anodisation of zirconium in 1.0 mol dm-3 phosphoric acid solution were investigated in a 3 to 30 V potential range with a view to inducing surface modifications for eventual use in biomedical and electronic applications. The oxide films grown at different potentials were characterised by Atomic Force Microscopy, X-ray photoelectron and Raman spectroscopies; the latter demonstrated the incorporation of phosphate ions into the passive films. Flat band potentials calculated from the Mott-Shottky analysis of the oxides semiconducting properties confirm the bilayer structure of the films. The oxide dielectric permittivity was evaluated from impedance spectroscopy measurements and the film oxide model proposed gave values independent of the oxide growth potential.