Oxide based resistive random access memory devices. | Department of Physics

Oxide based resistive random access memory devices.

The aim of the project is to explore the resistive switching properties of TiO2 layers when exposed to energetic ions. We have shown how the nanochannels have been formed in RF sputtered grown TiO2 layers through the evolution of voids by increasing the Ar+ ion fluence, and the role of their impact on oxygen vacancy driven charge conduction mechanism. Dr. Arabinda Barman pursued his PhD in this subject and received partial support from this project. Recently, Ms. Ananya Chattaraj is working in this project. A RF/DC magnetron sputtering system was developed under this program. Following papers have been published till now.


  1. Resistive Switching Behavior in Oxygen Ion Irradiated TiO2-x Films” A. Barman, C. P. Saini, P. Sarkar, G. Bhattacharjee, G. Bhattacharya, S. Srivastava, B, Satpati, D. Kanjilal, S. Ghosh, S. Dhar, A. Kanjilal J. Phys. D: Appl. Phys. 51, 065306 (2018).


  1.  “Nanoscale evidence of self-recovery of resistive switching in TiO2 films” A. Barman, C. P. Saini, D. Das, S. Dhar, M. Singh, A. K. Sinha, D. Kanjilal, M. Gupta, D. Phase, A. Kanjilal, J. Phys. D: Appl. Phys.  50, 475304 (2017).


  1. Probing electron density across Ar+ irradiation-induced self-organized TiO2-x nanochannels for memory application” A. Barman, C.P. Saini, P. Sarkar, A. Roy, B. Satpati, D. Kanjilal, S.K. Ghosh, S. Dhar, and A. Kanjilal, Appl. Phys. Lett. 108, 244104 (2016).


  1. Self-organized titanium oxide nano-channels for resistive memory application” A. Barman, C. P. Saini, P. Sarkar, B. Satpati, S. R. Bhattacharyya, D. Kabiraj, D. Kanjilal, S. Dhar, A. Kanjilal, J. Appl. Phys. 118, 224903 (2015).


Funding agency: DST SERB Extra Mural Research Funding



Ms. Ananya Chattaraj
Research Scholar
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