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Synthesis and Characterization of SiC-Based Thin Film Heterostructures

The paper presents the manufacturing technology of the ZnO/SiC/porous-Si/Si heterostructure. In the first stage, single-crystal Si plates of orientation (100) of the p- type conductivity were subjected to anodic etching in a solution of hydrofluoric acid HF. In the next step, silicon carbide layers were synthesized on mesoporous Si samples by the method of atom substitution. To do this, the samples were annealed in an atmosphere of a mixture of gases of carbon monoxide (CO) and silane (SiH4). The final step was the deposition of ZnO films by spraying a zinc target at RF discharge power in argon with oxygen. The samples were divided into two groups, depending on the conditions of the deposition process. The structure of SiC films was studied on an EMR-100 electron graph in the “reflection” mode at a fast voltage of 75 kV. The ZnO film on all samples is closely bound to the SiC/porous- Si/Si substrate. Diffractograms of ZnO/SiC/porous-Si/Si samples with different oxygen concentrations will be presented.