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Temperature Influence on Nanocrystals Embedded High-k Nonvolatile Memory Characteristics

The temperature influence on memory functions of the nanocrystalline ZnO embedded Zr-doped HfO2 high-k capacitor was investigated. Both the memory window and the trapped charge density increased with the increase of temperature. The temperature effect on hole trapping was observed at 125aC but not at 25aC or 75aC. The temperature effect on electron trapping was obvious above 25aC. The interface quality is greatly influenced by the temperature, which was detected on the C-V, G-V, and I-V curves. The sample temperature affects the carrier generation and transport mechanisms, which are responsible for the memory function changes.