{'fraction_non_alphanumeric': 0.03353057199211045, 'fraction_numerical': 0.011834319526627219, 'mean_word_length': 4.7727272727272725, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Valence band offsets at strained Ge/Sb/Si(100) and Ge/H/Si(100) interfaces

We report x-ray photoelectron spectroscopy experimental results on band offsets at interfaces grown by hydrogen and Sb-surfactant mediated epitaxy. For Ge deposited at C in , the valence band discontinuity was of . Using atomic hydrogen and a Sb-monolayer mediated growth, we obtained values of and . Our data show that the surfactant Ge layer strain induced effects on the modification of band offsets are surprisingly negligible.