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Spin Hall Effect Transistor

In a Spin Hall The spin Hall effect, in which an electrical current causes accumulation of electron spins of opposite signs in the direction transverse to the current flow, provides a promising avenue of research in exploiting the spin degree of freedom in electronic devices. However, implementing the effect in a device is challenging. Wunderlich et al. (p. 1801) combine the concept of the spin Hall effect with that of a spin transistor, and build a nonmagnetic device in a which a spin current, injected by optical means, is “stripped” of its charge component, goes through a spin-modulation layer, and is detected using the inverse spin Hall effect. Such manipulation of the spin current may help in future spintronic applications. Manipulation of the spin degree of freedom of electrons is used to build a spin transistor without magnetic materials. The field of semiconductor spintronics explores spin-related quantum relativistic phenomena in solid-state systems. Spin transistors and spin Hall effects have been two separate leading directions of research in this field. We have combined the two directions by realizing an all-semiconductor spin Hall effect transistor. The device uses diffusive transport and operates without electrical current in the active part of the transistor. We demonstrate a spin AND logic function in a semiconductor channel with two gates. Our study shows the utility of the spin Hall effect in a microelectronic device geometry, realizes the spin transistor with electrical detection directly along the gated semiconductor channel, and provides an experimental tool for exploring spin Hall and spin precession phenomena in an electrically tunable semiconductor layer.