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Effect of Ar Pressure on Sputtered Amorphous GdCo Thin Films

The dependence of the composition of amorphous GdCo thin films prepared by rf sputtering on the Ar gas pressure in the region of 6.0×10-2∼17.0×10-2 Torr was investigated by electron probe microanalyzer and Auger electron spectroscopy. The density of the films was found to decrease with increasing Ar gas pressure. Amorphous films sputtered under low pressure were less susceptible to background contamination than films under high pressure. It was also found that in order to prepare amorphous GdCo thin films reproducibly, it is important to control the background contamination, especially oxygen.