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Influence of Temperature on the Microstructure and Electrical Properties of BBT Thin Films

The BBT films were prepared by a spin-coating process from the polymeric precursor method (Pechini process). In order to study the influence of the temperature on the BBT microstructure and electrical properties, the films were deposited on platinum coated silicon substrates and annealed from 700@C to 800°C for 2 hours in oxygen atmosphere. The crystallinity of the films was examined by X-ray diffraction while the surface morphology was analysed by atomic force microscope. The dielectric properties and dissipation factor of BaBi 2 Ta 2 O 9 films at 1 MHz were observed. The polarization-electric field hysteresis loops revealed the ferroelectric characteristics of BaBi 2 Ta 2 O 9 thin films.