{'fraction_non_alphanumeric': 0.015358361774744027, 'fraction_numerical': 0.0, 'mean_word_length': 4.87, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Influence of interfacial structure on electrical properties of metal/Ge Schottky contacts

We investigated the influence of the interfacial structure on electrical properties of metal/n-Ge Schottky contacts. The native oxide on Ge surface is not origin of FLP and the interfacial reaction between metal and Ge probably caused FLP. The introduction of Si inter layer was not effective to resolve the FLP of metal/Ge contacts. It is important to investigate the reaction and the crystalline structure at metal/Ge interfaces with atomic scale in detail to understand the FLP in the future.