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Power generation characteristics of Schottky-type solar cells fabricated using barium silicide

We studied a novel method of increasing the efficiency of solar cells using BaSi2 as a semiconductor. BaSi2 could be deposited by RF magnetron sputtering using a polycrystalline BaSi2 target, followed by annealing at 500 °C for 30 min in N2 ambient. Furthermore, Schottky-type solar cells using BaSi2 were fabricated. The crucial point is that Al–Nd was used to form the Schottky junction between the BaSi2 film and the Al–Nd electrode. Additionally, Si3N4 (3–5 nm) was used as an oxidation prevention layer. Under irradiation at 90 K, resulting in a short-circuit current density (Jsc) of 3.19 mA/cm2, an open-circuit voltage (Voc) of 0.76 V, and a fill factor (FF) of 0.28 were obtained.