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Asymmetric InAs/GaSb superlattice pin photodiode to improve temperature operation

Mid-wavelength infrared (MWIR) InAs/GaSb superlattice (SL) pin photodiodes were fabricated by molecular Beam Epitaxy on p-type GaSb substrate. Dark current measurements as a function of temperature were performed on single SL detectors with two different period designs: one made of standard symmetric 8 InAs monolayers (MLs) / 8 GaSb MLs SL period, another made of alternative design with asymmetric 7.5 InAs MLs / 3.5 GaSb MLs SL period. Comparison of results revealed the predominance of the asymmetric SL design showing an improvement of the differential resistance area product of nearly two orders of magnitude. Spectral response measurements performed on asymmetric SL showed that the quantum efficiency was more than doubled.