{'fraction_non_alphanumeric': 0.024602026049204053, 'fraction_numerical': 0.0, 'mean_word_length': 5.4672897196261685, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Structure investigation of luminescent porous GaAs layers

Porous GaAs layers obtained by electrochemical etching were investigated using SEM, AFM and optical methods. It was established that increasing etching duration and current density change the porosity of bulk GaAs and at the same time, both gallium and arsenic oxides are formed on the sample surface. Photoluminescence spectra of investigated porous layers consist of 'infrared' and 'green' spectral structures. The 'infrared' structure exhibits a red-shift of its peak energies, and intensity of 'green' structure is highly dependent on etching conditions. Possible reasons of origin and of changes in those spectra are discussed.