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Initial defect configuration in NiO film for reliable unipolar resistance switching of Pt/NiO/Pt structure

We report on an oxygen partial pressure dependence of the unipolar resistance switching behavior of a Pt/NiO/Pt structure. By varying the oxygen partial pressure from 1 to 50 mTorr during film growth, we observed the reliable resistance switching behaviors in the films grown at high oxygen partial pressure, whereas we observed a failure of resistance switching behavior for the film grown at low pressure. In situ x-ray photoemission spectroscopy revealed that the unipolar resistance switching behavior was observed prominently in the NiO film of almost bulk stoichiometry accompanying a considerable off-stoichiometry near the NiO–Pt interface. Based on these observations, we extend the understanding of the effect of the initial defect configuration on the reliability of resistance switching in the Pt/NiO/Pt structure.