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THE EFFECT OF 8 MEV ELECTRONS ON 2 N2907A PNP TRANSISTOR

The PNP transistor 2N 2907A was irradiated with 8 MeV electron beam for different doses, to understand the displacement damage. It was observed that, the collector current and collector gain decrease for higher dose rates due to oxide trapping at Si-SiO2 interface. The gain degradation was also studied for different doses of electrons and it was observed that gain of a transistor was reduced significantly. This degradation in the gain can be attributed to the fact that the increased base current due to the recombination centers introduced by the high energy electrons. The displacement damage factor was calculated using the gain. Similar study was carried out using Co-60 gamma source compared with 8 MeV and the details of these studies are presented in this paper.