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In Situ Infrared Reflection Absorption Spectroscopy of Materials Formed on SiO2 in Inductively Coupled Plasma Etching Chamber

In situ infrared reflection absorption (IRA) spectroscopy was used to investigate materials formed on SiO 2 film coated on samples mounted on the inner surface of a process chamber for inductively coupled plasma etching. Aluminum wafers partially covered with photoresist film were etched using BCl 3 and Cl 2 plasma generated in a quartz chamber surrounded by a radio frequency (rf) coil. RF bias was applied to the aluminum wafers at the same time. This is the first time that, in order to predict the IRA spectra, the reflectivities of various inorganic multiple layers formed on metal substrates have been calculated using the optical constants of the materials. The experimental spectra for SiO 2 film and for the materials formed on it during a 2 μm deep etching process were well characterized by the calculated spectra of SiO 2 film and a B 2 O 3 layer on it, respectively.