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Integrated circuit wafer reflectivity measurement in the UV and DUV and its application for ARC characterization

Linewidth control over reflective topography has become a major problem in sub-half micron optical lithography. Reflective notching and thin film interference are the major contributors to linewidth variation. In this paper, we examined a simple and practical approach to characterize photoresist swing curve and anti-reflecting coating materials using reflectance measurements. An optimization of titanium nitride (TiN) anti-reflecting coating (ARC) thickness for G-line, I- line and DUV wavelengths was also examined for aluminum substrates. Aluminum film reflectivity shows a correlation with surface roughness and reflectance measurement technique can be utilized to monitor thin films.