{'fraction_non_alphanumeric': 0.019287833827893175, 'fraction_numerical': 0.002967359050445104, 'mean_word_length': 5.081081081081081, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Low Temperature Photoluminescence Signature Of A Two-Dimensional Electron Gas

We report the first observation of a narrow, low temperature photoluminescence peak associated with the presence of a two-dimensional electron gas (2DEG) at a GaAs/AlGaAs heterointerface. The exact physical mechanism giving rise to this emission is not clear. However, based on a large number of samples, its intensity is found to be directly related with the concentration of the electron gas. The temperature and exciting-intensity dependencies of the peak are consistent with a model based on free excitons in GaAs bound to the electron quantum well formed at the heterointerface by the 2DEG.