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Ascertaining the Nature and Distribution of Extended Crystalline Defects in Emerging Semiconductor Materials Using Electron Channeling Contrast Imaging

Semiconductor heterostructures represent the key building blocks for most nanoelectronics and photonics devices. However, the performance and reliability of these devices is often limited by the presence of extended defects arising from plastic relaxation of misfit strain. Hence, metrology for assessing the nature, density and distribution of such defects is of crucial importance in order to support the development and fabrication of novel semiconductor devices. Electron Channeling Contrast Imaging (ECCI) has emerged as the method of choice for analyzing the crystalline quality of semiconductor heterostructures with excellent precision even at low defect densities. The present paper discusses the most relevant theoretical and experimental aspects one needs to consider to obtain high-quality ECCI micrographs. Moreover, the capabilities of the methodology are illustrated on the example of various different defect types in the most relevant semiconductor material systems and structures.