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Analysis of electric field and electrostatic potential distributions in porphyrin-coated silicon nanowire field-effect transistors

The aim of this work is to analyze the electric field and electric potential distributions in undoped silicon nanowire Schottky barrier field-effect transistors (SB-FETs) with a backgate configuration covered by chemical compound for sensor application. In this work we model porphyrin-coated silicon nanowire FETs (SiNW-FETs) and examine how the porphyrin covering the surface of the SiNW-FETs influences the electric field and electrostatic potential distributions. Especially we analyze the 1D electrostatic potential along the axis of the silicon nanowire channel for different values of gate voltages for the subsequent electron transport characteristics.