{'fraction_non_alphanumeric': 0.04793863854266539, 'fraction_numerical': 0.037392138063279005, 'mean_word_length': 4.865168539325842, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 1, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Behaviour of the 3C–SiC(100) c(2 × 2) (C‐terminated) and 3 × 2 (Si‐rich) surface reconstructions upon initial H2/CH4 microwave plasma exposures

We present a comparative study of C‐terminated and Si‐rich 3C–SiC(100) surfaces exposed to a H2/CH4 microwave plasma used in diamond growth. Each surface is characterized before and after short plasma exposures using LEED, XPS and STM techniques. In both cases, a 5 minutes plasma exposure led to a 1 × 1 LEED pattern associated with a slight oxygen contamination as evidenced by XPS. However, upon additional annealings, the two surfaces exhibit very different behaviors. For the Si‐terminated 3 × 2 surface, a 1 × 1 → 2 × 1 transition occurring at 1173 K is observed while the initial c(2 × 2) surface reconstruction is restored at 1323 K for the C‐terminated surface. Furthermore, the XPS measurements show a correlation between oxygen surface release and LEED transitions. An atomic arrangement is observed by STM for the C‐terminated surface (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)