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Effect of Growth Temperature on InGaAsP/GaAsP Epitaxial Growth

The epitaxial growth condition of InGaAsP on GaAs0.61P0.39 is discussed in conjunction with a lattice latching effect which is shown to have a relationship with the solid composition of the epilayer. The growth temperature dependence of this relation is also discussed in terms of a theoretical calculation. The PL FWHMs of the epilayers depend on the solid composition but not on the growth temperature. This behavior is attributed to the compositional fluctuation, lattice latching effect and binodal instability of the epilayers.