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Determination of the band‐gap of MgS and MgS‐rich Zn1−xMgxSySe1−y alloys from optical transmission measurements

As part of our development of an epitaxial lift‐off process, utilising a sacrificial magnesium sulphide (MgS) layer, we have developed a MgS‐rich ZnMgSSe alloy which provides excellent carrier confinement and resists both oxidation and acid attack. Here the optical transmission of the alloy has been measured and its bandgap determined as a direct transition at 4.19 ± 0.04 eV. Its composition has also been determined by X‐ray interference (XRI) and comparison with simulations. For a range of alloy samples we obtain compositions of the Zn1−xMgxSySe1−y layers which are (x, y) = (0.80 ± 0.02, 0.645 ± 0.025). Using the alloy bandgap and composition we have determined direct bandgap transition energy for MgS by extrapolation. This is found to be 4.78 ± 0.14 eV.