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Thermal Stress in Doped Silicate Glasses (B,P) Deposited by PECVD and LPCVD

Using an in situ stress measurement technique which measures stress as a function of annealing temperature, we have investigated the effect of phosphorous and boron doping of silicon dioxide glass films deposited by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD). The stress at room temperature is σ i . Upon heating, it increases to a maximum, σ m , corresponding to a temperature T m , above which the stress is reduced to zero at a temperature T 0 . All these parameters plus the expansion coefficient are dependent on dopant concentrations and deposition technique.