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Semiconductor device and fabrication method thereof

PURPOSE: A semiconductor device is provided to decrease contact resistance and on-resistance of a transistor by increasing a number of contact portions, and to planarize the surface of a bump electrode by making a via hole not formed under the bump electrode formed in a pad part. CONSTITUTION: A low concentration source/drain region is formed in a semiconductor substrate. A high concentration source/drain region is formed in the source/drain region. A gate electrode(38E) is formed on the substrate through a gate oxide film. A P-type body region is formed under the gate electrode and placed between the source/drain regions. Plug contact portions(47) contact the source/drain region. A source/drain electrode is connected to the source/drain region with contact through the contact portions.