{'fraction_non_alphanumeric': 0.01891891891891892, 'fraction_numerical': 0.0, 'mean_word_length': 4.880952380952381, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Manufacturing method of flash memory having three dimensional cross point cell structure

PURPOSE: A method for manufacturing a flash memory with a three dimensional cross point cell structure is provided to make a silicon diode with high quality by forming a word line, a memory material, and a bit line once through a high temperature silicon process. CONSTITUTION: A frame loads memory cells. A memory block is formed by dividing the frame into a specific unit. A word line is extended in a Y direction of a semiconductor substrate. Memory materials are deposited in an empty region of the semiconductor substrate. A bit line is extended in an X direction of the semiconductor substrate. [Reference numerals] (FF) Semiconductor substrate