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Impact of Charge Trapping Layer Thickness and New Trade-Off in Performance Characteristics of 3-D SONOS Devices

We evaluate the impact of silicon nitride (SiN) layer thickness in BiCS-like 3-D SONOS devices via standard and advanced characterization techniques, based on program (erase) efficiency measurements. SiN thickness below 4 nm strongly impacts electron trapping efficiency, resulting in degraded program operation but enhanced erase saturation level and hence giving rise to a new program-erase trade-off. An optimal 4 nm SiN thickness is assessed for proper MLC operation.