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Growth and characterization of ZnCdMgSe‐based green light emitters and distributed Bragg reflectors towards II–VI based semiconductor disk lasers

We report the structural and optical properties of molecular beam epitaxy grown II–VI semiconductor multiple quantum well (MQW) structures and distributed Bragg reflector (DBR) on InP substrates for application in developing optically‐pumped semiconductor disk lasers (SDLs) operating in the green spectral range. One sample was grown directly on an InP substrate with an InGaAs buffer layer, while another had a 5‐period ZnCdMgSe‐based DBR grown on the InGaAs/InP substrate. X‐ray diffraction and scanning electron microscopy measurements revealed sharp superlattice peaks and abrupt layer interfaces, while steady‐state photoluminescence measurements demonstrated surface emission between 540–570 nm. Under pulsed excitation both samples exhibited features of amplified spontaneous emission (ASE) or stimulated emission, accompanied by luminescence lifetime shortening. The sample with the DBR showed higher surface luminescence and the onset of ASE at lower pump power. To further explore the design and performance of a ZnCdMgSe‐based DBR, a 20‐period DBR was grown and a reflectivity of 83% was obtained at ∼560 nm. We estimate that a DBR with ∼40 periods would be needed for optimal performance in a SDL using these materials. These results show the potential of II–VI MQW structures on InP substrates for the development of SDLs operational in the green–yellow wavelength range.