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Real-time observation of local molten-phase nucleation on a semiconductor surface under powerful light irradiation

The first results of a dynamics investigation of the effect of anisotropic local melting of semiconductors observed under irradiation by powerful light pulses are presented. In situ time dependences of the sizes and density (quantity per cm-2) of local molten regions are interpreted in the framework of the following model: the existence of a short-lived metastable state, characterized by superheating in the solid phase. The experiments and theoretical calculations crucial to clarifying the mechanism of the effect in question are discussed.