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A method to determine the gate bias-dependent and gate bias-independent components of MOSFET series resistance from S-parameters

An S-parameter measurement-based procedure for the extraction of the bias dependent and bias independent components of the MOSFET series resistance is presented. The proposed procedure allows the direct and analytical determination of these components from measurements performed on a single device. The method is verified by achieving good agreement between simulated and experimental data for a 0.18-/spl mu/m channel-length MOSFET.