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Thickness-dependent Electrical, Structural, and Optical Properties of ALD-grown ZnO Films

The thickness dependent electrical, structural, and optical properties of ZnO films grown by atomic layer deposition (ALD) at various growth temperatures were investigated. In order to deposit ZnO films, diethylzinc and deionized water were used as metal precursor and reactant, respectively. ALD process window was found at the growth temperature range from 150 o C to 250 o C with a growth rate of about 1.7 A/cycle. The electrical properties were studied by using van der Pauw method with Hall effect measurement. The structural and optical properties of ZnO films were analyzed by using X-ray diffraction, field emission scanning electron microscopy, and UV-visible spectrometry as a function of thickness values of ZnO films, which were selected by the lowest electrical resistivity. Finally, the figure of merit of ZnO films could be estimated as a function of the film thickness. As a result, this investigation of thickness dependent electrical, structural, and optical properties of ZnO films can provide proper information when applying to optoelectronic devices, such as organic light-emitting diodes and solar cells.