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Growth of Nitride-Based Fe3N/AlN/Fe4N Magnetic Tunnel Junction Structures on Si(111) Substrates

We have fabricated nitride-based Fe3N(30 nm)/AlN(2 nm)/Fe4N(25 nm) magnetic tunnel junctions (MTJs) structures on Si(111) substrates by molecular beam epitaxy of Fe3N layers onto AlN/α-Fe/Si(111). The X-ray diffraction peaks of α-Fe disappeared after the growth of the Fe3N layer, and those of Fe4N appeared instead. Rutherford backscattering spectroscopy (RBS) measurements revealed that the α-Fe layer was nitrided to form the Fe4N layer. In the magnetization versus magnetic field curves measured at room temperature, a two-step hysteresis loop was clearly observed, meaning that the two ferromagnetic layers were separated by the 2-nm-thick AlN barrier layer.