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Phonon coupling associated with free-to-bound and bound-to-bound transitions in GaAs layers grown by molecular-beam epitaxy.

The longitudinal-optical- and transverse-optical-phonon modes were observed to couple to selective-pair-luminescence transitions in GaAs samples. Very little phonon broadening is seen in the phonon replica transitions. This is due to the relatively flat phonon-dispersion curves at the Γ point in k space, where the phonon coupling occurs. Phonon replicas were also observed when the donor-acceptor pairs were resonantly excited at specific pair separations with the pair impurities being in their ground states. In this excitation, not only was the LO and TO mode coupling to the pump-energy transition observed, but also phonon coupling to the free-to-bound transition. The phonon-coupling energy to the free-to-bound transition was determined to be 47.9 meV