{'fraction_non_alphanumeric': 0.03136200716845878, 'fraction_numerical': 0.010752688172043012, 'mean_word_length': 5.240223463687151, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Metalorganic Chemical Vapor Deposition Study Using Tertiarybutylphosphine and Tertiarybutylarsine for InAlGaP Light-Emitting Diode Fabrication

We have investigated the possibility of using tertiarybutylphosphine (TBP) for metalorganic chemical vapor deposition (MOCVD) of Al-containing materials through InAlGaP light-emitting diode (LED) fabrication. It has been shown that a marked decrease in the performance of InAlGaP LEDs results from Zn diffusion into the active layer. The diffusion of Zn in the In0.5(Al0.7Ga0.3)0.5P cladding layer can be enhanced by increasing interstitial group-III, IIII. According to our growth model, an intrinsic disadvantage of TBP is that it decomposes at a temperature much lower than the substrate temperature and produces less-active phosphorus molecules ( P4). Since the vapor pressure of P4 is extremely high, it leads to lower effective V/III ratios on the growth surface and generation of IIII. In order to increase the effective V/III ratio, we have proposed new organic phosphorus sources that are expected to provide a large number of PHx (x=0–2) radicals on the surface.