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Effects of the Perhydropolysilazane Spin-on-Dielectric Passivation Buffers on the Reliability of AlGaN/GaN HEMTs

AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated using a perhydropolysilazane spin-on-dielectric (SOD) buffered structure with the Si3N4 passivation, and the effects of SOD-buffers on high electric field degradation and high temperature stability are investigated. After the high-electric field stresses (high power-state and off-state) applied to the HEMTs, we observe significantly enhanced high-electric field reliability in terms of the DC current collapse (20 and 9 % for high-power state and off-state stress, respectively) from the SOD-buffered structure compared to that of the conventional passivation structure (44 and 18 % for each case). The SOD-buffered structure also shows an improved high temperature stability producing a lower saturation drain current reduction of 49 % than that of the conventional structure (60 %) at 300 o C. It is proposed that the reliability enhancement of SOD-buffered structure is due to the reduction in surface state density at the passivation interface and the suppressed electron trapping.