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Abnormal Threshold Voltage Degradation Under Semi-On State Stress in Si3N4/AlGaN/GaN-HEMT

In this study, the threshold voltage (VT) degradation mechanism for a hot electron stress (HES) under semi-ON state conditions in AlGaN/GaN high electron mobility transistors is analyzed. The drain current versus gate voltage (ID–VG) characteristic curves indicate that VT shifts in the positive direction after the stress. However, an abnormal phenomenon that VT continuously shifts in the positive direction even after recovery is observed. A result comparison of a negative bias stress (NBS) experiment indicates that a hole recombination in pre-existing buffer defects is crucial. Therefore, a complete model of VT degradation mechanism is proposed. Moreover, the proposed model is confirmed through an illumination experiment and a Silvaco simulation.