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Electrical Properties of Silicon-based Ferroelectric Thin Films Prepared by Sol-Gel Method

Ferroelectric PZT thin films were fabricated on different substrates using Sol Gel method. In order to decrease the annealing temperature, PT buffer layer was added between PZT layer and substrate. It acted as a seed layer to improve the crystallization of PZT thin film. Electrical properties of the ferroelectric thin films were studied by C V curve, dielectric constant and loss, and leakage current measurements.