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Metrology of micro-step height structures using 3D scatterometry in 4x-nm advance DRAM

As DRAM design rules scale below 4Xnm, controlling the micro-step height caused by the etching process after patterning becomes more critical because it affects the post Chemical Mechanical Planarization (CMP) process window and furthermore affects yield. In this study, the latest Multi-Azimuth angle capability of Scatterometry Critical Dimension (SCD) was used to analyze the model of the micro-step height of nitride. SCD results were verified with Atomic Force Microscope (AFM) measurements.