{'fraction_non_alphanumeric': 0.017127799736495388, 'fraction_numerical': 0.003952569169960474, 'mean_word_length': 4.801526717557252, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Selective growth of GaN by liquid phase electroepitaxy using aluminum oxide mask

Aluminum oxide was investigated as a mask material for the selective growth of GaN by liquid phase electroepitaxy in comparison with SiO2, SiN, and W. SiO2 and W masks were dissolved in a solution and many polycrystals were generated on the SiN mask. Therefore, these masks are not suitable for selective growth. On the other hand, aluminum oxide was found durable in the solution, and growth selectivity was also achieved. Then, microchannel epitaxy was conducted using the aluminum mask by liquid phase electroepitaxy. Not only the selective growth but also the lateral growth of c-plane GaN with a width of about 8 µm was successfully achieved using the aluminum oxide mask.