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Modeling of plasmas for dry etching in ULSI technologies

In this paper we present a review of some of the recent results obtained in modeling of radio frequency (RF) plasmas used for plasma processing. The decreasing sizes of structures that are being processed gives rise to topography dependent etching, which poses a problem for designing plasma reactors. In this paper we discuss how some recently derived characteristics of particle transport may be incorporated in models of such plasmas especially having in mind the search for improvement of plasma reactors to avoid topography dependent etching efficiency due to the high aspect ratio of microelectronic device structures.