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Design and modelling of magnetic on-chip structures at 240 GHz

Different magnetic structures including couplers, baluns, and power splitters are designed, simulated and realized in 130nm IHP SiGe Bi:CMOS process. The iterative design procedure employing EM-simulation and computer-aided fitting against an equivalent circuit is described and verified with measurements to be an effective way to design success for passive magnetic on-chip structures. Magnetic components are especially small compared to equivalent circuits using coupled transmission lines enabling tighter integration and lower metal losses. Especially for active devices such as power amplifiers and necessary power splitter or combiner magnetic couplers offer the great advantage of an inherent feeding point for a DC-bias and compactness.