{'fraction_non_alphanumeric': 0.032981530343007916, 'fraction_numerical': 0.0158311345646438, 'mean_word_length': 4.460431654676259, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Modeling of 1 eV dilute nitride multi-quantum well solar cell

The efficiency of existing In(Al)GaP/GaAs/Ge multi-junction solar cell can be further increased by the introduction of a 4th junction with a band-gap in the range of 1 eV in between GaAs and Ge junctions. Dilute nitride (Ga(In)AsN) multi quantum wells (MQWs) inserted into the intrinsic region of a p-i-n GaAs are good candidates for this purpose. In this work, modeling has been done to estimate the feasibility of this structure. The result shows that the MQW 1 eV sub-cells could produce photocurrents greater than 18 mA/cm−2 when operating in a tandem configuration behind a GaAs solar cell and thus can support 4-junction solar cells with 1 sun AM0 conversion efficiencies in the 40% range.