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Experimental extraction of substrate-noise coupling between MOSFETs and its compact modeling for circuit simulation

We have developed test structures to experimentally extract the substrate-noise coupling characteristics between MOSFETs. It was found that the noise propagation from the aggressor to the victim can be described on the basis of the small-signal properties observed at the substrate node of the aggressor. Based on the finding an equivalent circuit was developed to predict the propagated noise intensity induced during circuit operation. The resulting prediction was verified to be in good agreement with the measured results.