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EOS/ESD sensitivity of functional RF-MEMS switches

The sensitivity to ESD events of electrostatically driven ohmic RF-MEMS switches under actuated and not-actuated conditions is here investigated. We have found that stiction and charge-trapping phenomena can be induced by EOS/ESD events. Preliminary results on HBM robustness with a good correlation with TLP tests are also reported. Electro-mechanical simulations have been carried out to study how the suspended membrane reacts to electrical overstress. Furthermore, we report on a new stiction mechanism, induced by the dielectric breakdown that can occur between the suspensions and the actuator electrodes, furnishing a possible guide line to a more robust design.