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New One-Particle Monte Carlo Method for Nanoscale Device Simulation

In this paper we present a new one-particle Monte Carlo iteration scheme to self-consistently take into account generation-recombination processes as well as quantum corrections. The basic idea is to couple the Boltzmann transport equation (or the Boltzmann-Wigner equation) not only with the Poisson equation, but also with the continuity equation by using exact transport coefficients from the Monte Carlo simulation in high-field regions and the known analytical transport coefficients in low-field regions. This approach is useful e.g. for the simulation of floating-body effects [1] in nanoscale double- and multi-gate SOI MOSFETs.