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Characterization of amorphous-Si/1ML-Ge/Si(001) Interface Structure by X-ray Standing Waves

The interface structure of an amorphous-Si/1ML-Ge/Si(001) crystal was investigated by the X-ray standing wave (XSW) method. The sample was prepared by the molocular beam epitaxy (MBE) deposition of 1ML of Ge on a clean Si(001) surface followed by the deposition of an amorphous Si (a-Si) capping layer of 50 Å thickness. The intensity of the reflected X-rays and the yield of the fluorescent X-rays of GeKα were measured around the 111 Bragg point. The fluorescence yield curve, which indicates the interaction between the XSW field and Ge atoms, showed that most of the Ge atoms stay at a position very close to the ideal Si site. This result provides effective feedback for fabricating SixGe1-x/Si devices.