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Thickness Dependent Characteristics of a Copper Phthalocyanine Thin-Film Transistor Investigated by in situ FET Measurement System

The influence of active layer thickness on transport characteristics of a copper phthalocyanine thin-film transistor was investigated by using the in situ FET measurement system with the film deposition continued up to several hundred nm in thickness. The drain current and mobility showed maximum values in the early stage of film growth and then decreased with the increasing film thickness. This result suggests that the over-grown layer affects the transport characteristics of the conductive accumulation layer, for example, owing to change of the electric field in the device.