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Compact resist model using single convolution kernel

Lithography simulation is an essential technique for today's semiconductor manufacturing process. Although several rigorous models have been proposed, these methods are time-consuming. In order to calculate a full chip in realistic time, a fast and accurate resist model is essential. This paper proposes a new compact resist model using an arbitrary convolution kernel. The convolution formula can be described as a system of linear equations, therefore, we can determine the convolution kernel by solving the system of linear equations. However, it is hard to find the effective solution, because it is an ill-posed linear inverse problem due to the measurement constraints. Therefore, the key point of our method is how to solve the ill-posed linear inverse problem. In this paper, we explain the details and effectiveness of our method.