{'fraction_non_alphanumeric': 0.04193138500635324, 'fraction_numerical': 0.0038119440914866584, 'mean_word_length': 5.677966101694915, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Photoluminescence from Silicon Quantum Dots in Si Quantum Dots/Amorphous SiC Superlattice

We prepared size-controlled silicon quantum dots superlattices (Si-QDSLs) by thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H)/silicon-rich hydrogenated amorphous silicon carbide (a-Si1+xC:H) multilayers. Transmission electron microscope (TEM) observation revealed that silicon quantum dots were formed in only a-Si1+xC:H layers. The size of silicon quantum dots can be controlled by the thickness of the a-Si1+xC:H layers. It was found that hydrogen plasma treatment (HPT) significantly enhanced the photoluminescence of the Si-QDSLs. The luminescence peaks shifted to shorter wavelength with decreasing the diameter of the silicon quantum dots in the Si-QDSL.