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Investigation of the reverse voltage stress on the fluorine plasma treated AlGaN/GaN Schottky barrier diodes

The influences of reverse voltage stress on fluorine plasma treated AlGaN/GaN Schottky barrier diodes (SBDs) have been investigated. The carrier transport process during the reverse voltage stress is analyzed in detail, which can fully explain the various phenomena of the stressed devices. Furthermore, C-V measurements and the calculation of the barrier heights both bring a good agreement on the analysis.