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High-frequency resonant tunnelling diode oscillator with high-output power

In this paper, a prototype G-band (140 GHz-220 GHz) monolithic microwave integrated circuit (MMIC) resonant tunneling diode (RTD) oscillator is reported. The oscillator employs two In0.53Ga0.47As/AlAs RTD devices in the circuit to increase the output power. The measured output power was about 0.34 mW (-4.7 dBm) at 165.7 GHz, which is the highest power reported for RTD oscillator in G-band frequency range. This result demonstrates the validity of the high frequency/high power RTD oscillator design. It indicates that RTD devices, as one of the terahertz (THz) source candidates, have promising future for room-temperature THz applications in such as imaging, wireless communication and spectroscopy analysis, etc. By optimizing RTD oscillator design, it is expected that considerably higher power (>1 mW) at THz frequencies (>300 GHz) will be obtained.