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Evolution of the Microstructure in Electrochemically Deposited Copper Films at Room Temperature

The room temperature evolution of the microstructure in copper electrodeposits (self-annealing) was investigated by means of X-ray diffraction analysis and simultaneous measurement of the electrical resistivity as a function of time with an unprecedented time resolution. Independent of the copper film thickness, the as-deposited microstructure consisted of nanocrystalline grains with orientation dependent crystallite sizes. A drastic decrease of the electrical resistivity occurs as a function of time associated with orientation dependent grain growth. Simulatenously with grain growth the crystallographic texture changes by a multiple twinning mechanism. The kinetics of self-annealing is strongly affected by the thickness of the deposit. Storage of the copper films at sub-zero temperatures effectively hinders self-annealing and does not affect the kinetics of self-annealing upon reheating to room temperature.