{'fraction_non_alphanumeric': 0.030539772727272728, 'fraction_numerical': 0.014204545454545454, 'mean_word_length': 5.1798245614035086, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Monolithic fabrication of nano-to-millimeter scale integrated transistors based on transparent and flexible silicon nanonets

In this paper, silicon nanonets (SiNNs), a synonym of random networks of silicon nanowires (SiNWs), are demonstrated as a potential alternative to replace amorphous silicon (a-Si) or organic materials in flexible and large-area electronics. We first report the low temperature and monolithic integration of SiNW-based field-effect transistors (FETs) with a channel length varying from a micro-to-millimeter scale. For a channel as long as 1000 μm, the current has to flow through a succession of at least a hundred SiNWs and as many SiNW–SiNW junctions. Despite this substantial related number of resistances in series, devices exhibit outstanding performances: a high drain current up to 10−7 A, an IOn/IOff ratio as large as 105 and a better mobility compared to a-Si and organic materials. Furthermore, such 1000 μm long channel FETs exhibit better subthreshold slope and lower device-to-device variability compared to shorter channel ones (50–200 μm). Good electrical stability is also observed after 4 months of exposure in air. In addition to these excellent features as a very long channel of transistors, silicon nanonets show good optical transparency and mechanical flexibility. These reported works make SiNNs a promising material for flexible and large-area electronics.