{'fraction_non_alphanumeric': 0.037783375314861464, 'fraction_numerical': 0.003778337531486146, 'mean_word_length': 5.2109375, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Investigation of the inserted LT-AlGaN interlayer in AlGaN/GaN/AlGaN DH-FET strucutre on Si substrates

A novel AlGaN/GaN/AlGaN double-heterostructure field effect transistor (DH-FET) structure with an inserted LT-AlGaN interlayer grown on 150 mm Si substrate has been studied. The DH-FET structure has been characterized by transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS) and X-ray diffraction (XRD). It is found that the inserted LT-AlGaN interlayer can further induce the compressive stress to compensate the tensile stress. Furthermore, the inserted LT-AlGaN interlayer acts as a dislocation filter to reduce threading dislocation propagation. These results indicate that the inserted LT-AlGaN interlayer plays an important role in the novel DH-FET structure.