{'fraction_non_alphanumeric': 0.024945770065075923, 'fraction_numerical': 0.010845986984815618, 'mean_word_length': 5.072368421052632, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Short-Circuit Protection for GaN Power Devices with Integrated Current Limiter and Commercial Gate Driver

A successful short-circuit protection technology for GaN power devices paired with a commercial gate driver is demonstrated. The GaN power devices have an integrated Short-Circuit Current Limiter (SCCL) to achieve a sufficiently long short-circuit withstanding time (SCWT). The SCWT is tuned from 0.3 µs to 2 µs (a remarkable 7x increase) with a relatively small penalty in on-resistance. The gate-driver has desaturation detection (DESAT) and soft shutdown circuitry to achieve a fast protection response of 800 ns with high noise immunity greater than 100 V/ns. The combination of GaN power devices with SCCL and a commercial gate driver with fast DESAT and high noise immunity allows short-circuit protection and fail-safe operation of GaN power electronics for additional robustness in motor drive applications.