{'fraction_non_alphanumeric': 0.016566265060240965, 'fraction_numerical': 0.0030120481927710845, 'mean_word_length': 5.045454545454546, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Fabrication and characterization of AlGaAs/GaAs multiquantum well ring lasers

In this paper, we present the design, fabrication, and characterization of large-diameter semiconductor ring lasers with a single out coupling waveguide using AlGaAs/GaAs multiquantum well wafer. We also investigate the influence of the coupling between the ring cavity and the straight waveguide on the threshold current. It was found that the threshold current reduces with the decrease of the coupling between the ring cavity and the waveguide due to the widening of the coupling gap. By optimizing the coupling gap, we achieve a device with the threshold current of as low as 49mA.