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TEM contrast of dissociated screw dislocations in silicon nearby a free surface

Dislocations are commonly analyzed by weak‐beam or high resolution transmission electron microscopy (TEM) from the observation of the thinnest parts of TEM samples. In this work, it is shown that faint contrasts of dissociated screw dislocations running parallel to the surfaces of a silicon TEM sample reveal free surface relaxation. The contrast features are fully explained from an approach involving an N‐beam theory of the electron diffraction and an appropriate elastic field. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)