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Influence of the Measurement Method and the Cooling System on the Obtained Values of the Junction Temperature of Power MOSFETs

The paper analyzes the influence of the applied measurement method on the measurement results of thermal parameters of power MOS transistors operating in different cooling systems. The indirect electrical method, the pyrometric method and the contact method are considered. Experimental studies are carried out for different passive and active cooling systems. The obtained measurement results are compared and the discrepancies between the measurement results are evaluated. Based on the investigations, the range of usefulness of the considered measurement methods for the evaluation of thermal properties of the considered power transistors is indicated.