{'fraction_non_alphanumeric': 0.02261904761904762, 'fraction_numerical': 0.01904761904761905, 'mean_word_length': 4.922535211267606, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Reactive ion etching of deep trenches in silicon

We have developed a new production technology of deep trenches RIE with a photoresist mask. RIE was performed in a low-pressure batch diode reactor. Wafers were placed on RF (5,28 MHz) electrode covered by organic lacquer. The maximum loading was 24 wafers having a diameter of 100 mm. Positive photoresist with 2 micron thickness was used for masking without any thermal treatment after development. The line width was 1.5 - 2.0 micron. Because earlier investigated mixtures of chlorine and bromine-containing halocarbons with SF6 didn't allow sufficient selectivity silicon/photoresist, we have proposed to use for deep silicon etching the mixture of CF3I/SF6 and investigated the dependence of silicon and photoresist etch rates and etch anisotropy on basic controlled plasma parameters.