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An Effective Charge Plasma based Semi-Superjunction MOSFET

This paper presents a distinct design of a semi-superjunction (Semi-SJ) MOSFET that enhances the performance of the device with reduced fabrication complexity. Charge plasma concept is employed in a Semi-SJ MOSFET structure. Metals with appropriate work-function are used to form the source and drain contacts. The proposed Semi-SJ device is simulated and the results are compared with the conventional Semi-SJ MOSFET. The proposed device exhibits upto 14% improvement in the current driving capability and the area specific ON-resistance (Ron.A) of the device is reduced by 13%, maintaining the same value of breakdown voltage(BV). Consequently, the trade-off between the Ron.A and breakdown voltage is optimized.