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A resonant infrared photoconductor with unit quantum efficiency

In this presentation we introduce a new concept for an infrared photoconductor and demonstrate that such a detector can, theoretically, exhibit unit quantum efficiency at selected frequencies. The idea is based on establishing a relatively high finesse absorption-cavity internal to the detector element and tuning the front surface reflectivity and the dopant concentration of the detector to achieve improved performance. A theoretical analysis demonstrates this concept and provides the relevant design parameters. This approach offers many other advantages over conventional photoconductors as well as impurity-band-conduction approach. Among those are enhanced photoconductive gain, improved noise performance, and better immunity against ionizing radiation.