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IR-Transparent Electrically Conductive CuAl x O y Deposited by Reactive Magnetron Co-Sputtering

This paper reports on progress in the fabrication of IR-transparent electrically conductive copper aluminum oxide (CuAl x O y ) by reactive magnetron co-sputtering from high-purity-Cu and -Al targets in an argon-oxygen-gas mixture. Recent equipment modifications have resulted in much better control of deposition parameters like forward and reflected power and, consequently, much better control of film composition. Applying the correct amount of power to each target and adjusting the oxygen-partial pressure have significantly reduced the growth of surface-oxide layers on the metal targets. Equipment and process improvements have eliminated the sputterrate inconsistencies and arcing that led to lack of composition control in our earliest films. We now have much better control of film composition and are beginning to understand the relationship between the electro-optical properties and the molecular structure of the films using Fourier transform infrared (FTIR) spectroscopy, electron spectroscopy for chemical analysis (ESCA), inductively coupled plasma (ICP) emission spectroscopy, high resolution electron microscopy (HREM) and electron energy loss spectroscopy (EELS). A pair of weakly intense FTIR absorption bands at 1470 and 1395cm −1 is present in films that have enhanced electrical conductivity and IR transparency. Understanding the origin of these bands could speed development of CuAlO 2 as a wide-bandgap-conductive oxide since these bands are clearly associated with enhanced conductivity and carrier mobility. The best film to date transmits about 80% in the mid-wave IR and has a sheet resistance of 160Δ;/sq.