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Ba-hexaferrite films grown on single crystal 6-H SiC with Low FMR Linewidth

In this paper, the growth of barium hexaferrite thin films on single crystal 6H silicon carbide was demonstrated. The preparation was done using pulsed laser deposition with a KrF excimer laser operating at 248 nm wavelength with 200 mJ energy per shot. The structure of the thin films were characterized using X-ray diffraction, AFM and SEM. The coercivities and the FMR linewidth of the films were determined using VSM.