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Bismuth Doping Enhanced Tunability of Strain-Controlled Magnetic Anisotropy in Epitaxial Y3Fe5O12(111) films


 Y3Fe5O12 (YIG) and BiY2Fe5O12 (Bi:YIG) films are epitaxially grown on a series of (111)-oriented garnets substrates using pulsed laser deposition. Structural and ferromagnetic resonance characterizations demonstrate the high epitaxial quality, extremely low magnetic loss, and coherent strain state in these films. Using these epitaxial films as model systems, we systematically investigate the evolutions of magnetic anisotropy (MA) with epitaxial strain and chemical doping. For both the YIG and Bi:YIG films, the compressive strain tend to align the magnetic moment in film plane, while the tensile strain can compete with the demagnetization effect and stabilize a perpendicular MA. We found that the strain induced lattice elongation/compression along the out-of-plane[111] axis is the key parameter that determines the MA. More importantly, the strain-induced tunability of MA can be enhanced significantly by Bi doping, and meanwhile, the ultra-low damping feature persists. We clarified that the cooperation between strain and chemical doping could realize an effective control of MA in garnet-type ferrites, which is essential for spintronic applications.