{'fraction_non_alphanumeric': 0.04328223624887286, 'fraction_numerical': 0.015329125338142471, 'mean_word_length': 5.851851851851852, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Si2H6 Dissociative Chemisorption and Dissociation on Si(100)-(2×1) and Ge(100)-(2×1)

Atomically controlled epitaxy of semiconductor-on-semiconductor is important for the construction of nanometer-scale devices such as quantum dots, qubits for quantum computing, nanoelectromechanical systems (NEMS) oscillators, and nanobiomedical devices. For instance, patterned atomic layer epitaxy (ALE) using a scanning tunneling microscopy tip to depassivate an area of a H-terminated Si(001) surface, creating a pattern for subsequent Si growth, should lead to a new generation of atomically precise structures. Vapor phase epitaxy is well-suited to achieve controlled deposition, as the precursors are not reactive with the H-terminated background, unlike Si atoms from solid-source evaporation. Disilane (Si2H6) is arguably the best precursor for Si ALE on Si or Ge surfaces at moderate temperatures; yet, its adsorption configuration and subsequent decomposition pathways are not well understood. Combining experimental data from in situ infrared absorption spectroscopy (IRAS), scanning tunneling microscopy (ST...