{'fraction_non_alphanumeric': 0.022486772486772486, 'fraction_numerical': 0.017195767195767195, 'mean_word_length': 4.69172932330827, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
X-ray diffraction on La3Ga5SiO14 crystal modulated by SAW near the K absorption edge of Ga

The process of x-ray diffraction on the La3Ga5SiO14 (LGS) crystal modulated by surface acoustic waves (SAWs) near the K absorption edge of Ga ( E = 10 367 eV) was studied. A redistribution of the diffracted x-ray intensity between the diffraction satellites occurs at the absorption edge due to the change in the x-ray penetration depth into the crystal and an effective change in the interaction of x-ray radiation with the near-surface crystal region modulated by SAW. The intensity distribution of the diffraction satellites starts to change smoothly immediately after the K absorption edge of Ga with a decrease in the x-ray penetration depth into the crystal.