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Investigating recombination kinetics in ZnIn2S4: extrinsically excited photoconductivity and photoluminescence

The dependence on illumination intensity up to 109 W m-2 of photoconductivity (PC) and photoluminescence (PL) has been studied in ZnIn2S4 for two different photon energies (2.07 eV and 2.5 eV; both less than the band gap=2.8 eV). The difference in the PC and PL behaviour for the two photon energies can be attributed to the availability of nonionised acceptors for donor-acceptor (D-A) recombination. The D-A route begins to saturate for excitation with 2.50 eV photons at intensities >or=0.5-20 MW m-2.