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A 3.5–4.5 GHz Complementary Metal–Oxide–Semiconductor Ultrawideband Receiver Frontend Low-Noise Amplifier with On-Chip Integrated Antenna for Interchip Communication

Chip-to-chip ultrawideband (UWB) wireless interconnections are essential for reducing resistance capacitance (RC) delay in wired interconnections and three-dimensional (3D) highly integrated packaging. In this study, we demonstrated a wireless interchip signal transmission between two on-chip meander antennas on printed circuit board (PCB) for 1 to 20 mm transmission distances where the low power gain of each antenna due to a lossy Si substrate has been amplified by a low-noise amplifier (LNA). The measured result shows that the LNA produces 26 dB of improvement in antenna power gain at 4.5 GHz on a lossy Si substrate. Moreover, a Gaussian monocycle pulse with a center frequency of 2.75 GHz was also received by an on-chip antenna and amplified by the LNA. The LNA was integrated with an on-chip antenna on a Si substrate with a resistivity of 10 Ω·cm using 180 nm complementary metal–oxide–semiconductor (CMOS) technology. The investigated system is required for future single chip transceiver front ends, integrated with an on-chip antenna for 3D mounting on a printed circuit (PC) board.