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Changes of DLTS Spectrum with Gold Concentration and Gold-Diffusion Temperature in N-Type Silicon

Gold was in-diffused into n-type silicon single crystals at 800-1150°C. DLTS spectra of the Schottky diode of the specimen were measured and four peaks (Ec-0.16, Ec-0.24, Ec-0.30 and Ec-0.54 eV) were observed. As the gold concentration and the gold-diffusion temperature increased, the relative height of the peak of Ec-0.24 eV increased compared to the most prominent peak of Ec-0.54 eV. The concentration of the peak of Ec-0.30 eV was saturated at about (1-4)×1014 cm-3.