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A New High-Frequency HEMT GaN Extrinsic Capacitance Extraction Technique

In this letter, a new extraction technique is proposed to determine the GaN high-electron-mobility transistor (HEMT) extrinsic capacitances using a small-signal model equivalent circuit with 21 elements under cold pinchoff operating conditions. This technique is based on an analytical representation of the various capacitances. The proposed approach achieved successful results through close agreement with published data, up to 60 GHz.