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Characterization of Zirconium Silicate Gate Dielectrics Deposited on Si(100) Using Zr ( NEt2 ) 4 and Si ( O n Bu ) 4

Zirconium silicate [(ZrO 2 ) X (SiO 2 ) 1 - X ] films were deposited by using a combination of precursors: tetrakis(diethylamido)zirconium [Zr(NEt 2 ) 4 ] and tetra-n-butyl orthosilicate [Si(O n Bu) 4 ]. An atomically flat interface of silicate/silicon was observed with no interfacial silicon oxide layers and impurity concentrations were less than 0.1 atom % (below detection limits). Zirconium silicate films with ∼20% ZrO 2 were amorphous up to 800°C and, above 900°C, phase separation of the films occurred into crystal ZrO 2 and amorphous phases. Dielectric constant (k) of the Zr-silicate films was about 7.3. Hysteresis in capacitance-voltage (C-V) measurements was less than 0.02 V. The leakage current density was 1.63 X 10 - 4 A/cm 2 at a bias of 1.0 V.