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Method for plotting frequency cutoff measurements for GaAs varactor diodes

Frequency cutoff for GaAs varactor diodes of diffused-P+-n-epitaxial n+-substrate construction can be plotted so as to conveniently show dependence of diode cutoff as measured at 10 GHz on diode n-region thickness and substrate resistivity. The measured data fit a model for the diode where the zero bias junction capacitance C_{j0} is in series with a junction resistance R j that is proportional to 1/C_{j0} , and a resistance R X that is constant. R j is the resistance of the diode n-region and the p+-diffused region, and is primarily dependent on the n-region thickness. R X is dependent on diode spreading resistance, and varies with substrate resistivity. R X is about 1 Ω for usual substrate material.