{'fraction_non_alphanumeric': 0.02676056338028169, 'fraction_numerical': 0.02112676056338028, 'mean_word_length': 4.827868852459017, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
GaN-based light emitting diode with embedded SiO2 pattern for enhanced light extraction

The n-GaN layer of c-plane GaInN/GaN light emitting diodes (LEDs) on sapphire was modified to contain a pattern of SiO2 nanorods. This embedded pattern of 300 nm long rods and diameter of 200-400 nm was created by thermal agglomeration of a Ni mask layer and subsequent dry-etching. The light output power (LOP) and external quantum efficiency (EQE) of the resulting LEDs increased both by some 25% to 40% depending on current density over the unpatterned structure. The increase is thought to be primarily the result of enhanced light extraction efficiency induced by enhanced scattering at the substrate-side interface.