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The role of dianglin bonds in resistance switching behaviors of SiOx - Based RRAM

We investigated The silicon dianglin bonds (DBs) features and resistance switching behavior of silicon suboxides (SiOx) sandwiched between Pt electrodes to study the x dependent operation characteristics and the nature of intrinsic conducting filaments in SiOx based resistance random access memories (ReRAM). When x<;0.80, the forming/set operations need a current compliance and the reset voltage Vreset is lower than set voltage Vset. However, when x>0.95, the operations don't need a current compliance and Vreset is higher than Vset. X-ray photoelectron spectroscopy (XPS) and electron spin resonance (ESR) measurements are employed to discover the transition of relative concentration of Si-O tetrahedral configurations and Si DBs with different x value. We propose a Si-DBs percolation model to explain the above characteristics.