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ESR and IR Studies on a-Si1-xGex:H Prepared by Glow Discharge Decomposition

This paper presents results on ESR measurement and IR absorption in a-Si1-xGex:H films prepared by glow discharge decomposition. In as-deposited films, the number of Ge dangling bonds per Ge atom [Ge↑]/[Ge] is found to be larger than that of Si dangling bonds per Si atom [Si↑]/[Si] by a factor of 4–15 because of preferential attachment of H to Si. [Ge↑]/[Ge] is reduced by an increase in Si content because H bonded to an Si atom works not only as a terminator for Si dangling bonds but also as a structural softener in these films. The differences in [Ge↑]/[Ge] among samples with various Si contents become smaller with increasing annealing temperature.