{'fraction_non_alphanumeric': 0.019583843329253364, 'fraction_numerical': 0.0, 'mean_word_length': 5.650406504065041, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Design of complex semiconductor integrated structures

We present the benefits and limitations for designing complex optical semiconductor-based integrated structures by means of advanced numerical modeling. Multi-section tunable laser designs are presented and their tuning properties are analyzed for different architectures. We introduce a model of an integrated SOA with electro-absorption modulator. Its spectral properties are analyzed function of the parameters of the absorber section, showing the influence on the extinction ration of the generated signal. An InP-type Mach-Zehnder modulator is designed, illustrating the models of Kerr, Frank-Keldysh and QCSE effects. An example of a photo-detector demonstrates how dimensions and absorption parameters can be optimized to increase its detection bandwidth.