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LOCOS process-induced stress effect on CMOS SOI characteristics

Process-induced stress effects on LOCOS SOI devices are reported. We show that as the field oxide thickness increases, degradation (enhancement) of NMOS (PMOS) I-V characteristics becomes increasingly pronounced. In addition, the linear relationship of transconductance vs. device width, typically seen in the bulk devices, becomes nonlinear. We attribute both phenomena to the LOCOS-induced stress effects on the SOI film.