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Photovoltaic Action in Polyaniline/n-GaN Schottky Diodes

Schottky diodes were fabricated on n-GaN films by coating them with an organic polyaniline layer as transparent conducting electrodes. These diodes have a high Schottky barrier height (1.28 eV) and a low reverse leakage current (2.7×10-9 A/cm2 at an applied bias of -1 V). The photovoltaic action of these diodes (VOC = 0.67 V and external quantum efficiency ∼30%) was studied under the illumination of an Air Mass 1.5 solar simulator. The polyaniline/n-GaN Schottky contacts were found to be sensitive to shorter wavelengths, indicating their potential for use as solar cells.