{'fraction_non_alphanumeric': 0.03884892086330935, 'fraction_numerical': 0.027338129496402876, 'mean_word_length': 5.439814814814815, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Low-Voltage Organic Nonvolatile Memory Transistors with Water-Soluble Polymers Containing Thermally Induced Radical Dipoles.

A water-soluble acidic polymer, poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAMPSA), was applied as a gate-insulating layer for organic field-effect transistors (OFETs). Before depositing the poly(3-hexylthiophene) (P3HT) channel layers, the PAMPSA layers were subjected to thermal treatment at various temperatures from 140 to 230 °C. The OFET performance was greatly enhanced by thermal treatment between 140 and 170 °C, whereas it became very poor at higher temperatures (200-230 °C). In particular, the transfer curves showed pronounced hysteresis phenomena at 170 °C. Various measurements including thermogravimetric analysis and X-ray photoelectron spectroscopy disclosed that the PAMPSA chains underwent thermal degradation from ca. 160 °C and could generate carbon radicals leading to the formation of dipoles with the nitrogen lone pair electrons. The carbon-nitrogen dipoles delivered hysteresis phenomena to the OFETs with the PAMPSA layers treated at 170 °C, which exhibited excellent memory retention characteristics up to 10 000 cycles even at -1 V. Hence, it is expected that the thermally treated PAMPSA layers can be used as one of the viable gate-insulating memory materials for low-voltage transistor-type organic memory devices (TOMDs).