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Electrical transport properties of a single wall carbon nanotube network

A single wall carbon nanotube (SWCNT) network is fabricated and its electronic transport properties are investigated. It shows a typical p‐type field‐effect‐transistor (FET) behavior and nonlinearities in the source current‐source bias characteristics. The network also exhibits incomplete turn‐off and a small mobility. These characteristics are explained by the fact that the network is a mixture of metallic and semiconducting SWCNTs connecting with one another. Various cross junctions such as SWCNT (semiconducting)‐SWCNT (semiconducting), SWCNT (semiconducting)‐SWCNT (metallic) are the source of nonlinearities and the small mobility. Incomplete turn‐off can be explained by the parallel conduction paths consisting of metallic SWCNTs which are insensitive to the gate bias. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)