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Hydrogen-related luminescence centres in thermally treated Czochralski silicon

The I-line (0.9650 eV), T-line (0.9351 eV) and several other luminescence centres created by annealing Czochralski silicon at 450 degrees C are all shown to incorporate one hydrogen atom, from observed deuterium-hydrogen isotope structure, and mainly one carbon atom deduced from carbon isotope structure. It is also demonstrated that hydrogen is a common contaminant in silicon and that it can be readily introduced by thermal treatments at 450 degrees C in the presence of water vapour or gaseous hydrogen. With increasing hydrogen content, the luminescence from the centres decreases, implying that if more than one hydrogen atom is captured by a centre it becomes optically inactive.