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1000-W Resistive Energy Dissipating Capability Against Inductive Transients Demonstrated in Non-Avalanche AlGaN/GaN Schottky Diode

Robustness of GaN power diodes must consider the device ruggedness against out of safe-operating-area events, especially the transient spikes in voltage and current. In this work, intriguing resistive energy dissipating capability against transients was realized in the AlGaN/ GaN Schottky barrier diodes (SBDs), delivering a kilowatt-level sustaining power, which alternatively overcomes the technological bottleneck of non-avalanche behavior in AlGaN/GaN SBDs. In particular, the GaN SBDs achieved a high dissipating energy of 1.5 mJ and a low transient voltage of 445 V, thanks to the partially metallized anode design. Together with rugged repetitive sustaining capability and high-temperature stability, the GaN SBDs with this advanced technical design present enormous potential in high-power, and high-reliability applications.