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Variation in characteristics of graphene nanoribbon field-effect transistors caused by edge disorder: Computational simulation of atomistic device

We theoretically investigated the variations in the characteristics of graphene-nanoribbon-based field-effect transistors (GNR FETs) using the nonequilibrium Green’s function method. In this study, the drain current (Id) was calculated as a function of gate voltage (Vg) for GNR FETs with various edge disorder concentrations (P). From the obtained Id–Vg curves, we estimated the device characteristics. We found that the variations of these device characteristics became larger with increasing P, as evidenced by a dramatic change in the shapes of their histograms. Furthermore, we clarified that these variations were caused by Anderson localization originating from the edge disorder.