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Tailoring the Potential Landscape and Electrical Properties of 2D MoS2 using Gold Nanostructures of Different Coverage Density

The
ability to tailor the potential landscape of two-dimensional
(2D) transition-metal dichalcogenides could have significant impact
in many functional device applications. Here we demonstrate that the
deposition of gold (Au) nanostructures of varying coverage on the
surface of 2D MoS2 enables manipulation of interfacial
charge transfer resulting in systematic tuning of the electrical transport
properties of MoS2 field effect transistor (FET). We found
that, with increasing Au nanostructure coverage, the threshold voltage
of the MoS2 FET shows continuous positive shift from 4
to 41 V resulting in a tunable charge transfer from 3.5 × 1011 to 4 × 1012/cm2. In addition,
the mobility could also be varied from 52.5 to 2.8 cm2V−1s−1 with Au nanostructure coverage.
Similar variation was observed for on-current and resistance of the
MoS2 samples. We interpret the results by considering a
model where Au nanostructure coverage introduces tunable localized
Schottky barrier landscape in the MoS2 charge transport
channel and controls the electronic properties. The simple approach
described here can be used for the fabrication of tunable functional
nanodevices based on layered 2D materials.