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Target implantation and redeposition processes during high-power impulse magnetron sputtering of aluminum

The processes of argon retention by the target and redeposition of target material were investigated by x-ray photoelectron spectroscopy as a function of radial position for different plasma conditions in high-power impulse magnetron sputtering of aluminum targets. Significant differences in Ar radial concentration profiles were observed for different discharge conditions. Inside the racetrack area, Ar ion flux-dominated implantation is compensated by radiation-enhanced diffusion loss terms. Outside the racetrack, the role of ion implantation is diminished, and Ar retention by the target may stem from a balance between gettering by redeposited Al and ion-induced Ar desorption.