{'fraction_non_alphanumeric': 0.021963824289405683, 'fraction_numerical': 0.003875968992248062, 'mean_word_length': 5.0546875, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Lifetime Control Free Cathode Side Concept for Si-Based Power Diode Targeting High-Speed Operation and High Dynamic Ruggedness

We present the first advanced power diode technology that matches the diameter of a large Si wafer (≥200mm). Our proposed diode consists of a new cathode with a thin wafer process-induced crystal defect layer and a double-implanted layer in combination with a relaxed field of cathode technology. The new diode demonstrates high-speed operation, a low cross-point current, a low junction leakage current, and improved dynamic robustness without a lifetime control technique. The thermal stability of the proposed cathode concept is equal to that of a defect free power diode. The proposed cathode concept further evolves the RFC diode technology.