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A High Bandwidth Evanescently Coupled Waveguide InGaAs/InP UTC-PD at Zero Bias

We present the fabrication of evanescently coupled InGaAs/InP UTC-PD. The InGaAs absorption layer of the PD is gradedly doped. As a result, a PD having 4 × 15 um 2 absorber size has an over 21 GHz bandwidth under zero bias, which is the largest one for evanescently coupled or edge coupled UTC-PD, to the best of our knowledge.