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Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process

We have prepared (001)ZrN films epitaxially grown on (001)Si substrates by a low temperature process using an ultrahigh vacuum magnetron sputtering system, and evaluated their epitaxial relationships and film qualities, using X-ray diffraction (XRD) analysis, X-ray pole figure, grazing incidence angle X-ray reflectivity (GIXR), transmission electron microscopy (TEM) and atomic force microscopy (AFM). It is clarified that (001)ZrN films grow epitaxially on (001)Si even at room temperature with the directional relationship of ZrN(001)[110]∥Si(001)[110], and the lattice mismatch at the interface between (001)ZrN and (001)Si is relaxed due to the existence of a very thin transition layer. It is also revealed from GIXR and AFM that the epitaxial ZrN films have a high film density and a flat surface morphology, irrespective of substrate temperature.