{'fraction_non_alphanumeric': 0.02787162162162162, 'fraction_numerical': 0.019425675675675675, 'mean_word_length': 5.171875, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 1, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Development of analysis system for F2-excimer laser photochemical processes

A system for photochemical analysis of F2-excimer laser lithography processes has been developed. The system, VUVES- 4500, consists of 3 units: (1) an exposure and bake unit that uses the F2-excimer laser to carry out a flood exposure and then post-exposure bake (PEB) of a resist coated wafer, (2) a unit for the measurement of development rate of photoresists, and (3) a simulation unit that utilizes PROLITH to calculate the resist profiles and process latitude using the measured development rate data. With this system, preliminary evaluation of the performance of F2 excimer laser lithography can be performed without a lithography tool that is capable of imaging and alignment. Profiles for 100 nm lines are simulated for the PAR-101 resist (manufactured by Sumitomo Chemical) and the SAL-601 resist (manufactured by Shipley), a chemically amplified resist that has sensitivity at the F2 excimer laser wavelength. The simulation successfully predicts the resist behavior. Thus, it is confirmed that the system enables efficient evaluation of the performance of F2 excimer laser lithography processes.