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Performance analysis and yield estimation for a negative capacitance field effect transistor-based eight-transistor static random access memory

The read/write performance and yield of negative capacitance field effect transistor (NCFET)-based eight-transistor (8-T) SRAM are quantitatively evaluated and then compared against the conventional 8-T SRAM. The performance of 8-T SRAM cell is analyzed by read/write metrics (i.e., read static noise margin, write-ability current, and read 'zero (0)' current). The sensitivity of 8-T SRAM cell on the read/write metric is estimated by quantitatively evaluating the impact of systematic variation (i.e., channel width, length, and threshold voltage variation). Based on the variation-aware sensitivity analysis, the quantitative yield estimation is done with "cell sigma" concept. Finally, the minimum power supply voltages (VDD) (which satisfies the six cell-sigma for yield estimation of NCFET-based/baseline 8-T SRAM cell) is quantitatively estimated.