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High quality interlayer dielectric for 4H–SiC DMOSFETs

In this work useful weight percentages of boron and phosphorus in boro-phospho-silicate-glass (BPSG) interlayer dielectric (ILD) films to getter mobile ions effectively in 4H–SiC DMOSFET structures are developed, considering the limitations, such as the required low glass flow temperature, and the possible hygroscopic nature of the films and formation of crystalline BPO4 particles, which may occur for high B and P weight percentages. The B and P weight percentage viscous flow temperature contours and empirical inequalities representing the above-mentioned limitations are developed and discussed. Results of this work are useful for both silicon and compound semiconductor device technologies.