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Isotope Effect of Penetration of Hydrogen and Deuterium into Silicon through Si/SiO2 Interface

We found a new filtering effect of hydrogen (H) and deuterium (D) isotope atoms for penetration process into crystal silicon (Si) through the interface between a Si and SiO2 native oxide layer. More H atoms are introduced into Si than D for mixing gases. It was determined from H and D mixed-atom treatment of Si wafer with the native oxide and the systematic measurements of Raman scattering of hydrogen molecules (H2, HD, or D2) and secondary ion mass spectrometry. This phenomenon can be tentatively explained in terms of an isotope filtering model of H and D via an intermediate cluster state formed at the interface between the native SiO2 layer and crystal Si.