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Low-Voltage Oxide Homojunction Electric-Double-Layer Transistors Gated by Ion-Incorporated Inorganic Solid Electrolytes

Porous inorganic dielectrics provide nanochannels for ion transportation, which is favorable for electric-double-layer (EDL) formation. 1% CaCl2-treated porous SiO2 shows an increased EDL specific capacitance of ∼4.2 µF/cm2. Low-voltage (1.0 V) indium–tin-oxide-based homojunction transistors gated by such a composite solid electrolyte are fabricated and characterized. After aging for one month in air ambient without surface passivation, such a device shows an equivalent field-effect mobility of 13 cm2 V-1 s-1, a current on/off ratio of 1.0×106, and a subthreshold swing of 80 mV/decade. Control experiment results demonstrate that the CaCl2 treatment can improve the stability of the EDL transistors.