{'fraction_non_alphanumeric': 0.02225519287833828, 'fraction_numerical': 0.004451038575667656, 'mean_word_length': 5.683168316831683, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Gradual Ge1−xSix/Si heteronanocrystals based non-volatile floating gate memory device with asymmetric tunnel barriers

The gradual Ge1-xSix/Si heteronanocrystals on ultra thin SiO2 were fabricated to form the metal-oxide-semiconductor (MOS) memory structure with asymmetric tunnel barriers through combining self-assembled growth and selective chemical etching technique. Charge storage characteristics in such memory structure have been investigated by using capacitance-voltage measurements. The observations demonstrate that the holes reach a longer retention time even with an ultra thin tunnel oxide, owing to the high band offset at the valence band between Ge and Si.