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Investigation of the effect of gallium ion (Ga+) irradiation on the fluorescence properties of synthetic microdiamonds

The optoelectronic properties of diamond can be tailored via doping for use in a wide range of practical applications, including for intra-cavity laser optics. Understanding the interplay between the ion irradiation conditions and the resulting optical output of diamond is critical in order to develop more highly optimised diamond-based components. Here we present an experimental investigation of the effect of surface gallium ion (Ga+) irradiation as well as focused ion beam (FIB) milling on the fluorescence properties of synthetic microdiamonds fabricated via chemical vapour deposition (CVD). The results obtained from control, low-dose surface irradiated, and FIB-milled microdiamonds are compared. Both the surface irradiated and FIB-milled microdiamonds were observed to have a significant increase in fluorescence output compared to the pristine samples. Chemical vapour state sample or non-radiative defect centres in FIB-milled crystals. The confocal fluorescence spectroscopy results confirmed the presence of highly fluorescent (Si-V) ⁻ centres (ZPL at 740 nm), and the N-V Frenkel pairs (peak maximum at 632 nm) in all of the representative microdiamonds. These results also suggest the formation of self-interstitials (peak maxima at 580 nm, 616 nm and 671 nm), divacancy related defect centres (655 / 659 nm), and graphite related defects (643 nm).