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Dark current measurements at low focal plane temperature

Spatial applications are challenging infrared (IR) technologies requiring the best system performances. Usually, the need is a trade-off between the spatial response and signal to noise ratio (SNR) of the IR detector, and in particular the dark current performance. Measuring dark current performances for IR detectors at low temperature require an understanding of detector physics, readout circuit design and also test equipment limitation. This paper describes possible issues associated with dark current measurements on n-on-p Mercury Cadmium Telluride (MCT) pixel design.