{'fraction_non_alphanumeric': 0.027052238805970148, 'fraction_numerical': 0.0, 'mean_word_length': 4.863387978142076, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Correlation of Built-In Potential and I–V Crossover in Thin-Film Solar Cells

Thin-film solar cells often show a crossover between the illuminated and dark I-V characteristics. Several device specific reasons for crossover exist and have been discussed extensively. In this paper, we show that a low contact-to-contact built-in potential can produce a voltage-dependent photocurrent that leads to I-V crossover at a voltage that is almost exactly the device built-in potential. This mechanism can produce crossover in the absence of carrier trapping or recombination. It can be a contributing factor to crossover, but when an anomalously low contact-to-contact built-in potential exists, it can be the dominant factor. Using numerical simulations, we examine a variety of model solar cell structures with low contact-to-contact built-in potential and show a strong correlation of the crossover and built-in potential voltages. These simulations also suggest that a plot of the illuminated minus dark current may help identify when a low Vbi is limiting device performance.