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Improved Near-Infrared Detectors

The paper describes the properties of a new large area InGaAs photodiode with near unity internal quantum efficiency. Measurements of linearity, spatial uniformity and dark current of the photodiodes are presented and compared with measurements on germanium photodiodes. The paper also describes the performance of a detector constructed from an arrangement of three of these photodiodes and shows how it has a calculable responsivity from 980 nm to 1 640 nm. It also describes how such a detector can be used as a sensor for a fibre-optic power meter with an uncertainty of around 0,1%.