{'fraction_non_alphanumeric': 0.037037037037037035, 'fraction_numerical': 0.013227513227513227, 'mean_word_length': 4.9140625, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Operation of single-walled carbon nanotube as a radio-frequency single-electron transistor

We demonstrate the operation of a radio-frequency single-electron transistor (RF-SET) using single-wall carbon nanotubes (SWNTs). The device is embedded in a resonant tank circuit and operates in reflection mode at temperatures as high as 5 K. Both frequency domain and time domain results are presented. With a gate modulation frequency of 1 MHz, a charge sensitivity of ∼4.78 × 10−4e/Hz−1/2 is obtained, which is limited by the large parasitic capacitance between the gate and the source/drain pads. Through the use of a top-gated configuration with reduced parasitic capacitance, both the RF performance and the charge sensitivity can be significantly improved.