{'fraction_non_alphanumeric': 0.024271844660194174, 'fraction_numerical': 0.012944983818770227, 'mean_word_length': 4.951923076923077, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Current Oscillation Related to N=3 Subband Levels up to Room Temperature in InGaAs/InAlAs MQW Diodes

A clear current oscillation related to the n=3 subband levels was observed up to room-temperature in the forward I-V characteristic of the InGaAs/InAlAs MQW diodes, as well as a current oscillation related to the n=2 subband levels. A significant hysteresis characteristic was also observed for the current oscillation related to the n=3 subband levels at 77 K. The energy difference between the n=1 and n=2 subband levels estimated from the I-V characteristic agrees with that obtained from the absorption spectrum.