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In Situ Ellipsometry Characterization Of The Growth Of Thin Film Amorphous Semiconductors

We have applied in situ ellipsometry to characterize the initial nucleation, interface structure, and surface roughness evolution of thin film hydrogenated amorphous silicon (a-Si:H) and related materials prepared both by rf glow discharge and by ion beam sputtering. Selected areas will be covered where in situ ellipsometry has made an impact on our understanding of the growth mechanisms for these thin films. The in situ measurements have been performed using a 3.4 eV incident probe beam. At this photon energy, a-Si:H is strongly absorbing, and the interpretation of the data is simplified since material only within the penetration depth of the light is probed. Topics to be discussed include: (1) the influence of deposition technique and parameters on the initial nucleation of a-Si:H on c-Si substrates. (2) the evolution of surface roughness in the later stages of growth of a-Si:H, and (3) the effect of deposition procedure on the interface properties of glow discharge amorphous silicon/amorphous silicon-nitrogen heterostructures.