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Investigations of vapor phase deposited transition metal dichalcogenide films for future electronic applications

In this work we present investigations on ultrathin and monolayered transition metal dichalcogenides (TMDs). These recently have raised much interest for their applications in electronics. TMDs can be n- and p-type semiconductors and some of them undergo a change in band structure when thinned to a monolayer. In particular, with the TMD MoS2, a number of devices such as transistors, photodiodes, LEDs and chemical sensors have been demonstrated. In this report we focus on devices derived from MoS2 that is grown by methods that can be employed for the large scale synthesis.