{'fraction_non_alphanumeric': 0.03971756398940865, 'fraction_numerical': 0.0088261253309797, 'mean_word_length': 5.370786516853933, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A Ternary-Valued, Floating Gate Transistor-Based Circuit Design Approach

This paper presents a method to use floating gate (flash) transistors to implement low power ternary-valued digital circuits targeting handheld and IoT devices. Since the threshold voltage of flash devices can be modified at a fine granularity during programming, our approach has several advantages. For one, speed binning at the factory can be controlled with precision. Secondly, an IC can be re-programmed in the field, to negate effects such as aging, which has been a significant problem in recent times, particularly for mission-critical applications. We present the circuit topology that we use in our flash-based ternary-valued logic digital circuit approach, and, through circuit simulations, show that our approach yields significantly improved power (~11%), energy (~29%) and area (~83%) characteristics while operating at a clock rate that is 36% as compared to a traditional CMOS standard cell based approach, when averaged over 20 designs. Unlike CMOS, our ternary-valued, flash-based implementation provides in-field configuration flexibility.