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Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD

Abstract The field-emission (FE) characteristics of 200 nm-thick Si-doped AlN films with different concentration of Si-dopant is investigated. It is found that the AlN film with lower concentration of Si-dopant has a smaller turn-on voltage, larger maximum current density and more stable FE current. Accompanying with atomic force surface micro-images, it is suggested that the stable current is attributed to a uniform surface, which is related a uniform local field enhancement factors and thus a stable FE current without discontinuous fluctuations. Furthermore, the analysis of scanning electron microscopy indicates that a smaller turn-on voltage and larger maximum current density may result from the electron transport channel of V-defects.