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Boosting short circuit current with rationally designed periodic Si nanopillar surface texturing for thin film solar cell

This work experimentally investigates the impact of the large-scale rational-designed periodic Si nanopillar (SiNP) array structural parameters (e.g. diameter/ periodicity/ height) on the reflectance and hence the absorption of the SiNP array for the first time, and the results are in consistence with our theoretical prediction [1]. Owing to the significantly enhanced light absorption of the optimized SiNP array texturing, a short circuit current density (Jsc) of 34.3mA/cm2 is realized on planar p-n SiNP surface textured solar cell, which is the highest to date among reported Si nanowire (SiNW)/SiNP based solar cells. This is in distinct comparison to Jsc of 18.1 mA/cm2 demonstrated on the solar cell without SiNP, which makes the SiNP array a suitable and promising texturing technology for thin film photovoltaic application (alike the micrometer-scale surface texturing commonly used in Si wafer solar cell).