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Effect of temperature on series resistance determination of Au/polyvinyl alcohol/n-InP Schottky structures

The current-voltage (I-V) characteristics of Au/polyvinyl alcohol (PVA)/n-InP Schottky diode have been measured at temperature range 175-425 K. It is found that the series resistance (RS) values of Au/PVA/n-InP Schottky diode estimated from Cheung's and Norde's methods, are strongly temperature dependent. The values of barrier height and RS have very different especially towards to the lower temperatures. This is attributed to non-ideal I-V characteristics of the MIS structure and non-pure thermionic emission (TE) mechanism due to the low temperature effects.