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Strained AlGaInP visible-emitting quantum-well lasers

A series of strained AlGaInP quantum well lasers has been fabricated with GaxIn1-xP wells of a fixed width, Lz equals 65 angstrom, in which x was varied to give both compressive (x < 0.51) and tensile (x > 0.51) strain. By cooling these lasers to temperatures approximately 130 K we have been able to isolate the intrinsic effects of the strain from the extrinsic changes due to the quantum well structure and we see reductions in threshold current as compressive and tensile strain is applied.