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Impact of Subsurface Damage on SiC Wafer Shape

The impact of surface stress due to polish and grind processes on wafer bow was studied as a function of abrasive size. Results indicate that sub-surface damage from these processes can introduce significant surface stress. For polishing processes, this stress is proportional to mean abrasive size. The study also investigates stress as a function of depth below the wafer surface and finds that most stress is concentrated near the wafer surface.