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Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted n InP junctions

The deep levels existing in fully ion implanted and rapidly thermally annealed InP junctions were investigated in this work. The samples were co-implanted with magnesium and silicon. An additional phosphorus implantation was carried out in some samples to study its effect. In order to characterize the traps, deep level transient spectroscopy (DLTS) and the capacitance-voltage transient technique (CVTT) were used. For a (control) sample implanted with Mg only, four deep electron levels located at the upper half of the band gap (at 0.45, 0.2 eV 0.25 and 0.27 eV below the conduction band) were detected by DLTS. On the contrary, for the Mg-Si- and Mg-P-Si-implanted samples only two of them (at 0.25 and 0.27 eV below the conduction band) were observed. Several characteristics of each trap were derived by CVTT measurements. Tentative assignments have been proposed for the physical nature of these deep levels.