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A Study of the Factors Influencing the Brightness of the Photoluminescence of Sputter-Deposited Y2O3 : Eu3 + Film Phosphors

Y 2 O 3 :Eu 3+ film phosphors have potential applications as red components in flat display and lighting devices. In this study, we investigated the parameters affecting the internal extraction efficiency and thickness of Y 2 O 3 :Eu 3+ film phosphors with a view to optimizing their brightness. Y 2 O 3 :Eu 3+ film phosphors were grown on both quartz and sapphire substrates using a sputter deposition process and annealed with firing temperatures varying from 800 to 1300°C. We also determined the variation of the photoluminescence (PL) brightness of Y 2 O 3 :Eu 3+ films and powders with the screen weight (thickness) of the phosphors. The highest brightness obtained for efficient Y 2 O 3 :Eu 3+ thick-film (∼10 μm) phosphors annealed at 1200°C was ∼73% of the PL brightness of the optimum Y 2 O 3 :Eu 3+ powder sample. The PL brightness of a Y 2 O 3 :Eu 3+ film phosphor with a screen weight of 2.8 mg/cm 2 was found to be 60% of that of a Y 2 O 3 :Eu 3+ powder sample with the same screen weight. The increased brightness of Y 2 O 3 :Eu 3+ thick-film phosphors achieved in this study is attributed to the combined effects of enhanced volume, improved crystallinity, and increased grain size.