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Growth and properties of tin oxide nanowires and the effect of annealing conditions

Luminescence data obtained in the visible region from the SnO2 nanowires are used to determine the defect levels within the bandgap responsible for the strong orange emission, and a shift in the orange luminescence is seen at low temperatures. Temperature-dependent photoluminescence (PL) in the UV region shows the merging of the various emission lines at low temperature into a single broad UV peak with increasing temperatures. Investigations of PL and transmission electron microscope-energy dispersive x-ray spectroscopy (TEM-XEDS) from wires of different diameters show that the luminescence in the gap originates from surface states and thinner wires have more oxygen vacancies compared to thicker ones. Nanowires post rapid thermal annealing in two different ambients viz. oxygen and nitrogen are compared, using Raman, photoluminescence (PL) and x-ray photoelectron spectroscopy (XPS) as characterization tools. Our data demonstrate that annealing in oxygen improves the crystalline quality of the nanowires due to the decrease in the oxygen vacancies.