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Temperature rise and damage morphology of APD in external capacitor circuit irradiated by millisecond pulse laser with different pulse widths

In this paper, the surface temperature rise and damage morphology of biased Si avalanche photodiodes (APDs) fabricated in external capacitor circuit irradiated by 1.0ms and 1.5ms pulse width laser are studied. The effects of external capacitance on surface temperature rise and damage morphology of APD irradiated by pulsed laser under different laser energy densities were compared and analyzed. Compared with the absence of external capacitance, the existence of external capacitance reduces the surface temperature of Si-APD and has a certain impact on the damage morphology. The results show that under the same external capacitance and laser energy density, the surface temperature rise of APD treated by 1.5ms pulsed laser is lower than that of 1.0ms pulsed laser, and the surface temperature rise of APD decreases with the decrease of external capacitance.The results show that the existence of external capacitance can further improve the laser damage resistance of Si-APD.