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Epitaxial Strain Effects in Ultrathin Films of Squaric Acid Studied by Temperature-Dependent Electron Reflectivity

Dielectric phase transition of epitaxial films of antiferroelectric squaric acid (SQ) with nanometer-order thickness was detected from the sample current measurement during reflection high-energy electron diffraction (RHEED) observation. The current changed markedly when the sample temperature was increased continuously. This phenomenon can be explained by considering the energy required to accommodate a charge in a molecule embedded on the surface of a dielectric, which is related to the phase transition in thin films through dielectric relaxation. The onset temperature was dependent on the substrate materials and film thickness, which indicates that the dielectric transition temperature is affected by epitaxial strain effects.