{'fraction_non_alphanumeric': 0.022865853658536585, 'fraction_numerical': 0.0, 'mean_word_length': 4.972727272727273, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
UV Nonvolatile Sensor Using SANOS Capacitor Device

The silicon-aluminum oxide-nitride-silicon oxide-silicon (hereafter SANOS) could be candidates for ultra violet total dose (hereafter UV TD) nonvolatile sensors. In the case of SANOS UV TD radiation sensors, the UV radiation induces a significant increase of threshold voltage VT. The changes of VT for SANOS after UV radiation have a correlation to the UV TD as well. In this paper, the performance for capacitor types of SANOS UV TD nonvolatile sensor were discussed in detailed. The SANOS capacitor device in this study has demonstrated the better feasibility for UV TD nonvolatile sensor application.