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Study of Dopant Activation in Si Employing Differential Hall Effect Metrology (DHEM)

In advanced node transistors the contact resistance dominates parasitic resistance and negatively impacts power consumption and speed. Therefore, there is considerable efforts directed towards reducing source/drain (S/D) contact resistivity below 10 −9 ohm-cm 2 level. Increasing the carrier concentration in S/D requires development of doping and annealing techniques and evaluation of dopant activation, especially in the near-surface regions of the films. In this contribution, we present a study of active dopant depth profiles through n-type highly doped Si films using Differential Hall Effect Metrology (DHEM) technique.