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Study on Microstructures and Interdiffusion Behavior in Pt/Ti/SiO2/Si and Pb(Zr, Ti)O3/Pt/Ti/SiO2/Si Multilayer Systems

Interfacial phenomena in the O2-annealed multilayer systems of Pt/Ti/SiO2/Si and Pb(Zr, Ti)O3/Pt/Ti/SiO2/Si have been studied using Auger electron spectroscopy, X-ray diffraction and transmission electron microscopy (TEM). Emphasis has been placed on the microstructural analysis of interfaces. The strong tendency of titanium diffusion into platinum appeared to be responsible for the formation of an isolated platinum layer when the samples were annealed in O2 for 4 h at 450° C or higher. The formation of a TiO2 phase was confirmed at the annealing temperature of 600° C or higher. TEM analysis of the 650° C annealed sample confirmed the presence of a Pt-containing layer sandwiched by TiO2 layers. Rapid thermal annealing is strongly recommended to suppress undesirable interdiffusions and the resultant chemical reactions.