{'fraction_non_alphanumeric': 0.025614754098360656, 'fraction_numerical': 0.0, 'mean_word_length': 5.929078014184397, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Property control methods of diamond-like silicon-carbon films for micro- and nanoelectronics

Possible methods for controlling the properties of amorphous diamond-like silicon-carbon films are considered: physical or structural modification, chemical modification, and physical-chemical modification. It is shown that the method of physical modification allows controlling in a wide range the properties of diamond-like silicon-carbon films (electrophysical, mechanical properties and surface morphology) without changing the chemical composition of the material. Chemical modification was carried out by introducing transition metal into diamond-like silicon-carbon films. The dependences of the phase composition, electrophysical and mechanical properties on the content and type of metal are analyzed. The method of physical-chemical modification is considered, when the introduced impurity changes not only the chemical composition, but also the structure of the material.