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Simulation of Negative Differential Resistivity in Thin Ferroelectric Films

I-V dependences of sol-gel PZT thin films containing areas with negative differential resistivity are studied. For their simulation a modified model taking into account simultaneous existence of different leakage components (the Dawber-Scott diffusion current, the ohmic one, and space charge limited one) is proposed. The proposed model extends the simulation range to the high-voltage values, and increases the accuracy determination of the oxygen vacancies concentration, as well as depletion width regardless of the test voltage rate in comparison with the Dawber-Scott model.