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Controlling the resistive switching hysteresis in VO2 thin films via application of pulsed voltage

We investigate the origin of the variation in resistive switching hysteresis of VO2 thin films. Using pulsed electrical measurements in textured VO2 thin film devices, we show that the hysteresis observed in I–V curves results from Joule heating effects, particularly in the low-resistance state. The hysteresis is reduced by increasing the cooling time between pulses. Based on a mechanism of Joule heating-induced metal-insulator transition, numerical simulations are performed, which agree with the experimental variation in the hysteresis. Finally, a framework for engineering the I–V curves of VO2 devices is proposed.