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Evaluation of Composition Reproducibility of HgCdTe Epitaxial Layers Grown in Novel Liquid Phase Epitaxy Apparatus

The results of Hg1-xCdxTe layer growth by liquid phase epitaxy (LPE) from the Te-rich solution (Hg1-zCdz)1-yTey with z=0.0545 and y=0.806 obtained by the tipping method in a closed system are presented. The epitaxial layers with different compositions, x=0.20–0.22, and thicknesses ranging from 10 to 20 µm, which are suitable for manufacturing IR photodiode structures, were grown on (111) B-oriented Cd0.96Zn0,04Te substrates at 501–470 °C in a sealed quartz ampoule. A novel LPE apparatus for obtaining of a residual-melt-drop-free surface is described. The effect of the preliminary synthesis of the source on the reproducibility of both the liquidus temperature (ΔΘ±1.8 °C) and epilayer composition (Δx±0.003) was evaluated using the expression for the Hg–Cd–Te phase diagram. As-grown layers exhibit p-type conductivity with a carrier concentration in the range from 4×1016 to 1.4×1017 cm-3 and mobility of 240–270 cm2 V-1 s-1. The concentration and mobility of charge carriers in the layers annealed at 280 °C for 10 h under Hg overpressure were found to be 5×1015 cm-3 and 1×104 cm2 V-1 s-1, respectively.