{'fraction_non_alphanumeric': 0.02607361963190184, 'fraction_numerical': 0.013803680981595092, 'mean_word_length': 5.278846153846154, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Transport and magnetic properties of Co-doped BaFe2As2 epitaxial thin films grown on MgO substrate

We report resistivity, Hall coefficient, current–voltage characteristics and magneto-optical imaging measurements of epitaxial Co-doped BaFe2As2 thin films deposited on an MgO(001) substrate. The Hall resistivity of the films has a substantial contribution arising from the anomalous Hall effect of ferromagnetic components. The critical current density (Jc) of the films is ∼ 2 MA cm − 2 at low temperatures. Differential magneto-optical images of the remnant state give similar Jc values and also exhibit the presence of extended defects in the film.