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Electron Transmittance Profile Through Non-linear Potential Barrier of Sharp-shaped Electrode

A sharp electrode model was employed to study tunneling phenomena in split-gate memory cell which has a sharp floating gate structure. This kind of structure are said to give significant tunnel current increase due to electric field enhancement. In this study we evaluate this claim by studying electron transmittance through potential barrier formed by a general triangular shaped electrode. It is shown that, sharp electrode give rise to a nonlinear potential barrier that are thinner than barrier from planar electrode. Using transfer matrix method, we show that electron transmittance from sharp electrode are higher than those of planar one, and has an ever increasing difference as the applied voltage increased. We also show that for a sharp-planar electrode pair, the most probable path of electron tunneling is the one that perpendicular to the tip-edge, due to the horizontal potential barrier has its lowest value at this direction.