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Narrow Photoluminescence Spectra in InGaAsP/GaAs (001) LPE Layers Grown in the Immiscible Region

Narrow band-to-band photoluminescence (PL) was observed in InGaAsP/GaAs (001) layers which were grown in the immiscible region at 788°C. The full width at half maximum (FWHM) of the band-to-band emission at ∼1.8 eV was about 18 meV at 77 K and about 38 meV at 300 K. The layer surface which showed such a narrow PL band was flat and smooth. The good layer was grown near the substrate edge, where the layer was 25 µm thick. It is presumed that the strain energy induced by the substrate and the high growth rate due to the edge growth is related to the stable growth.