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Damage Effects in Silicon Surface Barrier Detectors with 0.5–2 MeV Protons

Silicon surface barrier detectors have been irradiated with 0.5–2 MeV protons to observe the radiation damage effects appearing in electrical properties. The depletion layer capacitance against bias voltage has shown a plateau which is dependent on proton fluence and energy. This behavior is consistently explained by the proposed model in which the induced defects act as acceptors and compensate donor ions in the proton range. The effective number of defects is estimated to be about 0.2 per 1 MeV proton.