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Investigation of quantum-capacitance induced drain-current loss for multi-gate InGaAs n-MOSFETs

This work investigates the quantum-capacitance induced drain-current loss for multi-gate In0.53Ga0.47As n-MOSFETs with tri-gate structure (fin aspect-ratio AR=1) and double-gate FinFET-like structure (AR>>1) through ITRS 2018-2024 technology nodes using quantum-mechanical simulation corroborated by model calculation. The quantum capacitance stemming from the small electron effective mass of InGaAs channel significantly degrades the intrinsic inversion capacitance and thus induces drain-current loss for multi-gate InGaAs devices. Our study indicates that the mobility enhancement of InGaAs devices (against Si counterparts) should be at least ~3X and ~2.5X, respectively, for tri-gate and FinFET-like structures to compensate the quantum-capacitance induced drain-current loss.