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New prospects for electron beams as tools for semiconductor lithography

Maskless pattern generation using probe-forming electron beam systems has been exploited to great advantage for several decades in lithographic processes of both mask making and direct write applications used in the production of integrated circuits (ICs). The key limitation of these e-beam lithography systems has been and still is throughput. More efficient exposure techniques using shaped beams to project a multitude of pixels simultaneously have improved productivity but were unable to keep pace with Moore's Law and the steady increase of pattern densities. The recent development of massively parallel pixel projection has opened new prospects for electron beam lithography. The early proof-of-concept demonstrations of these techniques are the main subject of the paper.