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Thermoelectrically-cooled extended-SWIR FPAs using unipolar barrier detectors

Attollo Engineering will present results of our research program developing extended SWIR sensors as well as the packaging and camera electronics surrounding it. The 640x512 sensor uses GaInAsSb for the active layer and has a cutoff wavelength of 2.5 m. The unipolar barrier structure enables a higher operating temperature by substantially reducing dark current caused by G-R mechanisms and surface leakage. The material is grown on GaSb and is made up of GaInAsSb absorber and contact layers separated by an AlGaSb barrier. We will present dark current and imaging results from the sensor fabrication at different temperatures. The detector array was hybridized to a 15 m pixel pitch ROIC that has a direct injection unit cell. The hybridized sensor was packaged into a custom 4-stage thermoelectrically cooled package. The package was particularly designed to minimize the heat load and maximize the thermal conduction. We will present the trades that went into designing the package and the internals of the package. The cooler stabilized the sensor temperature at 200K. The electronics used to drive the package have the ability to change biases and timing on the fly using software controls. Attollo designed these electronics to be a low-cost solution for demonstrating sensors in many different modes. We will show information regarding each stage of integration and show the results of the imaging using the eSWIR sensor and supporting equipment.