{'fraction_non_alphanumeric': 0.03495145631067961, 'fraction_numerical': 0.02524271844660194, 'mean_word_length': 5.070588235294117, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Tunneling Explanation for the Temperature Dependence of Current–Voltage Characteristics of Pt/InN Schottky Barrier Diodes

The current–voltage (I–V) measurements on Pt/InN Schottky barrier diodes in the temperature range 10–280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factors were calculated using the Cheung method. The measurements were best explained using the tunnelling model. A value of m*⊥ = 0.237 m0 is obtained.