{'fraction_non_alphanumeric': 0.022598870056497175, 'fraction_numerical': 0.005649717514124294, 'mean_word_length': 5.420289855072464, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Single-crystalline nanowires of SiC synthesized by carbothermal reduction of electrospun PVP/TEOS composite fibres

Nanowires of SiC were synthesized by carbothermally reducing PVP/TEOS composite fibres obtained by electrospinning. High-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED) indicated that the SiC nanowires are single crystalline in nature. Both Fourier-transformed infrared spectroscopy and HRTEM indicated that a thin layer of SiO2 was formed on the outer surface of the nanowire as a result of post-heat treatment for the removal of residual carbon. Such SiO2 layer protects the inner SiC fibre from further oxidation. The formation mechanism of single-crystalline SiC nanowires was proposed based on our understanding and characterizations. The growth of the nanowire is believed to be along the (111) of its cubic cell.