{'fraction_non_alphanumeric': 0.026096033402922755, 'fraction_numerical': 0.006263048016701462, 'mean_word_length': 4.99375, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
The Impact Research on Composition and Electric Properties of the CIGS Powder with Different Content of Ga

CuInGaSe2 (CIGS) is the family of semiconducting materials of the tetragonal chalcopyrite structure; it has emerged as a leading material for high efficiency and radiation-hard solar cell application. The CIGS powder was synthesized by a solvothermal method. The morphologies and microstructure of the composites were characterized using scanning electron microscopy (SEM), X-ray diffraction (XRD) and inductive coupled plasma (ICP). It was concluded that the powder has different component with the content of Ga in raw changed. SEM results showed that the size of 0.2 ~2m crystal was formed. ICP results indicated that the element molar ratio of Cu, In, Ga and Se is closer to the elements in raw materials when the reactive time is 48h. The electric properties of product have been investigated, and all the samples have small resistivity values.