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Optical and magnetic properties for erbium-related centers in self-assembled silicon nanostructures

We present the first findings of high efficient Er3+- related electroluminescence 4I13/2 yields 4I13/2 from self-assembled silicon nanostructures with sizes varying from 1.0 to 10 nm that are naturally prepared as a subsequence of quantum-size n--p junctions. The built-in electric field induced by these n+-p junctions is found to result in the Stark effect that perturbs strong sp-f mixing due to the electron-hole localization on the Er3+-ions incorporated into nanostructures. This spatial confinement is shown to cause ultrafast energy transfer to the erbium-related centers which increases with decreasing size of nanostructures thereby enhancing the electroluminescent efficiency.