{'fraction_non_alphanumeric': 0.02903225806451613, 'fraction_numerical': 0.04086021505376344, 'mean_word_length': 4.005376344086022, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effect of Heat Treatment on 1.47 eV Band in CdTe Films on GaAs(100) Substrates

We performed the heat treatment of CdTe films on GaAs substrates. The effect of heat treatment on a 1.47 eV band was characterized by photoluminescence (PL) spectra. As excitation density decreases, the emission peak shift of the 1.42 eV band is estimated to be 8.5 meV. As the excitation density decreases, the decrease in the intensity of the 1.47 eV band becomes faster than that of the 1.42 eV band. The 1.47 eV band decreases in intensity with heat treatment, while the 1.42 eV band increases in intensity. These results suggest that the origin of the 1.47 eV band is annealed by heat treatment. By comparing the changes of PL spectra with and without the 1.47 eV band of CdTe films before and after heat treatment, the increase in the intensity of the 1.42 eV band is considered to be related to the annealing of the origin of the 1.47 eV band.