{'fraction_non_alphanumeric': 0.02318840579710145, 'fraction_numerical': 0.0, 'mean_word_length': 5.008695652173913, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Self-adjusting boron nitride mask for Reactive-Ion Etching

In this paper a simple approach is demonstrated for spatially selective etching of a silicon nitride layer by Reactive Ion Etching (RIE) by using a reusable shadow mask as a separate solid component part. Two ceramics were applied as mask materials: aluminum oxide and boron nitride. After the usage of an aluminum oxide mask several times, the deposition of small aluminum fluoride particles is observed. In contrast, using a boron nitride mask, a RIE process without any residuals on the surface can be accomplished. Furthermore, cutting a shadow mask out of bulk material, containing a three dimensional structure, is feasible.