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Reactive pulsed laser deposition of WOx layers for SiC-based hydrogen sensor fabrication

Peculiarities of WOx films fabrication by reactive pulsed laser deposition for high temperature Pt-oxide-SiC devices formation were investigated. Deposition of the oxide film was also carried out in such a way as to prevent deposition of droplet fraction (deposition with anti-droplet screen). Direct Simulation Monte Carlo and Kinetic Monte Carlo methods were performed for the deposition processes modeling. The response of the SiC-based devices to hydrogen-containing gases depends on the conditions of deposition of the oxide layer. The best properties were found in the sensor obtained by depositing the scattered flux of W atoms in a shady area on SiC substrate at an oxygen pressure of 10 Pa.