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Total Dose Effects on the Performance of Irradiated Capacitorless MSDRAM Cells

The impact of total ionizing dose (TID) is reported on irradiated capacitorless metastable dip RAM (MSDRAM) cells, built in a planar SOI technology. The memory window shifts toward more negative voltages at higher doses. The unconventional gate current peak measured in MSDRAM cells decreases with dose and disappears at 500 krad(SiO2) for these devices. The retention time of the 0-state decreases with dose, with the greatest decrease for memory cells programmed with high back-gate voltages. The trapped charge in the 400-nm buried oxide changes the potential in the body and interferes with the ability to store a 0-state. The irradiated cells exhibit higher drain currents while reading the 1-state. This increase of the drain current is enhanced for longer programming times.