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Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN

Thin films of III–V compound semiconductors such as GaAs and InP can be grown on native substrates, whereas such growth was difficult for group III nitride semiconductors. Despite this drawback, scientists have gradually become able to use the functions of group III nitride semiconductors by growing their thin films on non-native substrates such as sapphire and Si substrates. With the continuously increasing demand for the conservation and generation of energy, bulk substrates of group III nitride semiconductors are highly expected to maximize their potential. In this report, I review the current status of the growth methods for bulk GaN single crystals used for substrates as well as summarize the characteristics of blue light-emitting diodes (LEDs), heterojunction field-effect transistors (HFETs), and photovoltaic cells on GaN substrates.