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Analytical Modeling of Switching Characteristics of the SiC MOSFET Based on Finite State Machine

The silicon carbide (SiC) MOSFETs have been widely applied in power converters due to their nice switching characteristics, such as fast transient response speed and low switching loss, which may largely impact performance of converters in power efficiency, power density, and electromagnetic compatibility (EMC). In order to assess switching characteristics of SiC MOSFET, an analytical model based on finite state machine (FSM) is proposed. The sub-stages during switching transient are characterized and modeled by state equations and FSM, respectively. Meanwhile, the influences of C-V and IV characteristics are also considered in FSM. Moreover, the output terminals of FSM are connected to electrical interface provided by Simulink, which makes circuit simulation accessible. The simulation and experiment results indicate that the model is able to comprehensively estimate switching characteristics of the SiC MOSFET such as: transient response speed, switching loss, and high-frequency (HF) electromagnetic interference (EMI) noise. Therefore, the model can provide much more valuable instructions in further application of SiC MOSFET.