{'fraction_non_alphanumeric': 0.032520325203252036, 'fraction_numerical': 0.017615176151761516, 'mean_word_length': 4.865079365079365, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Co-ferrite thin films with perpendicular magnetic anisotropy

Here, a unique process has been developed to deposit Co-ferrite thin films onto thermally oxidized silicon wafer with perpendicular magnetic anisotropy by facing target sputtering. Co-ferrite films with preferential (001) orientation have been successfully prepared. Coercivity in the perpendicular direction as large as 12 kOe has been achieved. Of particular interest is that the perpendicular magnetic anisotropy and coercivity of the films are depended on the chemical status in the films. Three dimensional lattice parameters determined by in-plane X-ray diffractometry to be a=b=8 .43 Å, c = 8 . 35Å. This indicating a compressive out-of-plane strain as large as 1 .1 %.