{'fraction_non_alphanumeric': 0.02839396628216504, 'fraction_numerical': 0.005323868677905945, 'mean_word_length': 5.130434782608695, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Improved Photovoltaic Effect of p-i-n Structured BiFeO₃ Film Deposited by Radio-Frequency Magnetron Sputtering.

Pure phase polycrystalline BiFeO₃ film was deposited onto FTO substrate by RF magnetron sputtering method. SEM result shows that BiFeO₃ film has the obvious porosity and large clusters which lead to the poor ferroelectric and photovoltaic properties in FTO/BiFeO₃/Ag device. However, these properties are improved in p-i-n structured FTO/TiO₂/BiFeO₃/HTM/Ag device by incorporating the electron and hole transport materials. The hysteresis loop measurement demonstrates the excellent ferroelectric property with large remnant polarization (2Pr = 180 μC/cm²) and low leakage current. The J-V curve shows the short-circuit current density is dozens of times larger than that of FTO/BiFeO₃/Ag device. Moreover, the photovoltaic output depends on the poling field where the positive poling improves the short-circuit current density to -85 μA/cm₂ and the negative poling reduces both the photocurrent and photovoltage. It is believed that the ferroelectric polarization plays a dominant role in the photovoltaic effect.