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Effect of CeO2 Addition on the Structure and Dielectric Properties of BaxSr1-xTiO3-Based Glass Ceramics

BaxSr1-xTiO3-(Ba-B-Al-Si-O) glass ceramics (BST-BBAS) with various amounts of CeO2 added, were prepared via melt-quenching technique followed by controlled crystallization. X-ray diffraction reveals that the doping of CeO2 restrains the impurity phase in the glassceramics. Besides, the dielectric breakdown strength increases to 1488kV/cm with 0.5 mol% CeO2 content. Due to the combined effect of quite high breakdown strength and comparatively high dielectric constant, the energy storage density of 3.2 J/cm3 was achieved in the glassceramics with 0.5 mol% CeO2, indicating that the CeO2 added is an effective method to improve the energy storage density of BST-BBAS glass ceramics.