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Influence of crystal's nominal figure of merit on Ti:sapphire laser directly pumped by InGaN laser diodes

We experimentally confirm a pump-induced loss in a Ti:sapphire laser pumped by 451-or 478-nm laser diode. Such loss is significant even for a crystal producing better output performance at 520-nm pumping. We demonstrate a power scaling of a CW Ti:sapphire laser using two 520-nm green diodes and two 478-nm blue diodes, and obtained an output power of 593 mW at an absorbed pump power of 2.5 W.