{'fraction_non_alphanumeric': 0.02621231979030144, 'fraction_numerical': 0.002621231979030144, 'mean_word_length': 5.945454545454545, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Cold-bonding in sub-10 nm indium tin oxide nanorods

Cold-bonding in a typical metal oxide material nanostructure, indium tin oxide nanorods (ITONs), was observed and studied by combining precise in situ nano-manipulation, transmission electron microscopy (TEM) observation and on-line electrical properties measurements. Our studies revealed an oriented attachment process caused by enhanced atom mobility or diffusion and rearrangement at the contact, which worked efficiently in reconnecting the ITONs. Electrical measurements exhibited low contact resistance between the re-connectable ITON segments. Our observations indicate that small-sized nanostructures could be cold-bonded easily following a similar mechanism with their electrical properties retained.