{'fraction_non_alphanumeric': 0.021814006888633754, 'fraction_numerical': 0.002296211251435132, 'mean_word_length': 5.228571428571429, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 1, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Development of a reference wafer for on-wafer testing of extreme impedance devices

This paper describes the design, fabrication, and testing of an on-wafer substrate that has been developed specifically for measuring extreme impedance devices using an on-wafer probe station. Such devices include carbon nano-tubes (CNTs) and structures based on graphene which possess impedances in the κ Ω range and are generally realised on the nano-scale rather than the micro-scale that is used for conventional onwafer measurement. These impedances are far removed from the conventional 50- reference impedance of the test equipment. The on-wafer substrate includes methods for transforming from the micro-scale towards the nano-scale and reference standards to enable calibrations for extreme impedance devices. The paper includes typical results obtained from the designed wafer.