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Spin-Dependent Tunneling in Semiconductor Structures Without an Inversion Center

The scientific article is devoted to a theoretical study of the tunneling of electrons through semiconductor barriers. It is shown that the tunneling process itself in such systems is spin-dependent and the transparency of the structures depends on the orientation of the electron spins even for symmetric barriers in the absence of an external magnetic field. The microscopic nature of this effect consists in the spin-orbit splitting of electronic states in the barrier, which is cubic in the wave vector. The actuality of the article is considering the theory of spin-dependent tunneling for single barriers and for resonant two-barrier structures. It is shown that the dependence of the tunnel transparency of the structures on the mutual orientation of the spin and the electron wave vector can be used for spin injection and for the electrical detection of the spin state of electrons. The influence of the spin-orbit interaction on the tunneling passage of charge carriers through non-centrosymmetric semiconductor barriers can manifest itself during the injection of free charge carriers from ferromagnets into a semiconductor through a potential barrier. The scientific novelty lies in the fact that, in the study of tunneling magnetoresistance in the structure of Fe/GaAs/Au, an anisotropic dependence of resistance on the magnetization of the Fe layer in the interface plane was found. Model calculation of the injection of electrons from Fe to Au through a semiconductor barrier GaAs taking into account the effect, enabled to explain the anisotropy observed experimentally.