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Surface Doping Induced Mobility Modulation Effect for Transport Enhancement in Organic Single Crystal Transistors.

Molecular doping has conventionally been an effective way to improve the electrical transport performances in organic field effect transistors (OFETs), while corresponding mechanisms associated with specific doping techniques have been less investigated and discussed in detail. Here, based on ultra-thin DNTT single crystals we realized robust transconductance enhancements in OFETs upon surface molecular doping realized via van der Waals epitaxially growing crystalline F6TCNNQ onto the single crystal's surface. We proposed that, it is the mobility modulation effect (MME) from the interactions between charge transfer interface and gate electric field, that contributes to more weighted bulk carriers, and finally improve charge transport performances. The evaluations were further supported by SKPM's surface potential characterizations, which manifested the gate induced more delocalized holes near the charge transfer interfaces. SCLC investigations, numerical calculations, and theoretical mobility modeling were also performed to corroborate the analysis. This study could deepen the understanding of charge transport in doped semiconductors and provide effective ways for optimizing the electrical performance of organic devices. This article is protected by copyright. All rights reserved.