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Coupling Effects of Adjacent Inductors on the Transformer in the Millimeter-Wave Regime

Because of the compact layout of millimeter-wave (mm-wave) ICs, coupling effects of adjacent inductors will lead to poor performance on the transformer, such as changing inductances (), quality factor () and self-resonant frequency () of each coil, and altering coupling coefficient () and maximum available gain (). This paper analyzes the coupling effects between the adjacent inductor and transformer on silicon substrate and develops a broadband equivalent-circuit model, along with a methodology for extracting model parameters directly by -parameters based on full-wave EM simulations. The model is validated by EM simulation. The simulated L, , , , , and transformer's characteristic resistance () of the model agree well with the EM simulation with different types of coupling structures in a 0.18 CMOS process over a wide frequency range up to mm-wave frequency band.