{'fraction_non_alphanumeric': 0.01444043321299639, 'fraction_numerical': 0.0, 'mean_word_length': 5.235955056179775, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Performance of InP/GaAsSb DHBTs Planarized with Teflon AF Compared to DHBTs with Airbridge Interconnects

We compare the DC and RF performance of InP/GaAsSb/InP DHBTs fabricated in a Teflon AF planarization process to identical DHBTs with airbridge interconnects. No statistically significant difference in performance was observed, proving that the Teflon AF layer does not degrade the devices. Multi-layer deposition and dry etching of Teflon AF were investigated to explore the suitability of Teflon AF as an interlevel dielectric in DHBT based MMICs.