{'fraction_non_alphanumeric': 0.043209876543209874, 'fraction_numerical': 0.02204585537918871, 'mean_word_length': 4.790816326530612, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Dynamics of direct X-ray detection processes in high-Z Bi 2 O 3 nanoparticles-loaded PFO polymer-based diodes

Semiconducting polymer based X-ray detectors doped with high-Z nanoparticles hold the promise to combine mechanical flexibility and large-area processing with a high X-ray stopping power and sensitivity. Currently, a lack of understanding of how nanoparticle doping impacts the detector dynamics impedes the optimization of such detectors. Here, we study direct X-ray radiation detectors based on the semiconducting polymer poly(9,9-dioctyfluorene) blended with Bismuth(III)oxide (Bi2O3) nanoparticles (NPs). Pure polymer diodes show a high mobility of 1.3 × 10−5 cm2/V s, a low leakage current of 200 nA/cm2 at −80 V, and a high rectifying factor up to 3 × 105 that allow us to compare the X-ray response of a polymer detector in charge-injection conditions (forward bias) and in charge-collection conditions (reverse bias), together with the impact of NP-loading in the two operation regimes. When operated in reverse bias, the detectors reach the state of the art sensitivity of 24 μC/Gy cm2, providing a fast photore...