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Investigation and reduction of frequency pulling in SiGe mm-wave VCOs at limited power consumption

The influence of load variation on the oscillation frequency of wideband mm-wave VCOs in a SiGe bipolar technology is investigated theoretically and experimentally. This load variation can change the real part of the voltage gain of the oscillating transistor stage, which varies the input impedance of this stage via CCB, thus leading to the so called frequency pulling δƒosc. This effect can be reduced, at relatively low power dissipation (240mW in total for the 80GHz VCOs under investigation), by use of a common-base stage at the output of the oscillator and, furthermore, by two cross-coupled compensation diodes in the oscillator core. The latter measure slightly reduces the tuning range (from Δƒosc = 24.5GHz to still remarkable 18.7GHz), but does not degrade phase noise and output power (−97 dBc/Hz at 1MHz offset frequency and 11 dBm, respectively, at center frequency).