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Microstructure of the nitrogen-induced localized state in GaAsN thin films grown by chemical beam epitaxy

To investigate the microstructure of nitrogen-induced localized state (EN) that perturbs the conduction band of GaAs host material, we adopted the photoreflectance measurements to chemical-beam-epitaxy grown GaAsN thin films. We measured both two split subbands to estimate correct values of EN. It was clearly seen that estimated EN decreased with increasing nitrogen content and temperature. By considering a change of a mean distance between neighboring nitrogen atoms, we concluded that the microscopic structure of EN is not only an isolated nitrogen atom but also nitrogen-related complex, accompanied by low-order pairs of nitrogen atoms and/or nitrogen clusters.