{'fraction_non_alphanumeric': 0.03762135922330097, 'fraction_numerical': 0.04733009708737864, 'mean_word_length': 5.346153846153846, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Epitaxial Growth of Ferromagnetic Silicide Fe3Si on Si(111) Substrate

Epitaxial growth of the ferromagnetic silicide Fe3Si on Si substrates was investigated using molecular beam epitaxy. X-ray diffraction (XRD) measurements revealed that the Fe3Si phase was formed at 60–300 °C, and the FeSi phase was formed at 400 °C. From the results of XRD and transmission electron microscopy measurements, it was found that the Fe3Si(111) layers were epitaxially grown on Si(111) substrates, while random poly-crystal Fe3Si layers were formed on Si(100) substrates. Detailed XRD measurements showed that a small amount of DO3-type Fe3Si was formed together with the B2-type Fe3Si. Vibrating sample magnetometer measurements revealed that Fe3Si(111) layers on Si(111) substrates have in-plane magnetic anisotropy with a period of 180°.