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Isolating surface and bulk contributions in an HgCdTe junction diode

This paper reports the possibility of assessing the relative surface and bulk contributions in HgCdTe junction diodes by analyzing the Current - voltage (I - V) and dynamic impedance - voltage (Rd - V) characteristics of an individual diode. As an example, an analysis of the experimental data obtained on diodes fabricated in our laboratory on bulk grown p-type HgCdTe wafers using B+ implantation and ZnS passivating layers will be presented.