{'fraction_non_alphanumeric': 0.026986506746626688, 'fraction_numerical': 0.0, 'mean_word_length': 5.88659793814433, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
CMP process — Integrated chemical & physical phenomena in between wafer and polishing pad

In CMP process, various CMP relevant phenomena occur in between wafer and polishing pad. These phenomena are complicated and have closer relationship mutually, therefore it is required to understand them systematically and comprehensively. In the investigation, the researches on slurry flow, fluid thickness of slurry, wafer-polishing pad contact, wafer-slurry chemical reaction, temperature distribution and its influence, slurry particle's behavior and material removal mechanism etc. are examined experimentally, and it was attempted to comprehend and understand entirely.