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Dislocation effects in FinFETs for different III–V compound semiconductors

While Si-based devices are facing the limits of scaling, III–V materials, having high mobility, have attracted more and more attention. However, their advantages are obtained by ignoring the drawbacks of inevitably present dislocations. In this paper, we present a theoretical model that describes the degradation in carrier mobility caused by these inevitable charged dislocations in nanometer-sized, quantum-confined III–V compound semiconductor fin-shaped field effect transistors. We conclude that the Fermi-level pinning effect needs to be resolved to give carriers high enough energy (Fermi energy in the channel) to effectively ignore Coulomb scattering of charges at dislocations in a channel made by III–V compound semiconductors.