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Crystallinity Improvement by Synchrotron Radiation Irradiation in Low-Temperature Si Epitaxial Growth Using Disilane

Si films were grown on Ge substrates by Synchrotron Radiation (SR)-excited crystal growth around the low substrate temperature limit for epitaxial growth. From the observation of Reflective High Energy Electron Diffraction and Raman scattering spectra, it was found that the crystallinity of the Si film was clearly improved by SR irradiation. From the temperature dependence of the growth rate, it was confirmed that SR irradiation greatly enhances the growth rate in the lower temperature region below 500°C.