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N–H-related deep-level defects in dilute nitride semiconductor GaInNAs for four-junction solar cells

Deep-level defects were investigated and compared among three molecular beam epitaxy (MBE)-grown dilute nitride semiconductor GaInNAsSb solar cells, one of which was as-grown and the other two were annealed in a metal organic chemical vapor deposition (MOCVD) atmosphere (H2 and AsH3) or a nitrogen (N2) atmosphere. A residual defect in the as-grown sample was firstly discovered and considered to be mainly responsible for the degradation in GaInNAsSb solar cells. Meanwhile, an N–H-related defect was confirmed, as well as the effects on background carrier concentration (BGCC) together with hydrogen incorporation. The N2 annealing showed a significant effectiveness of suppressing the defects and improving the solar cell properties.