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A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters

The performance of carbon nanotube field-effect transistors has been studied based on the non-equilibrium Green's function formalism. The effects of elastic and inelastic scattering and the impact of parameters, such as electron-phonon coupling strength and phonon energy, on the device performance are analyzed. The effect of scaling of the source-gate spacer, drain-gate spacer, and gate length is studied. The results for devices with different barrier heights at the metal-CNT interface are discussed