{'fraction_non_alphanumeric': 0.042279411764705885, 'fraction_numerical': 0.08639705882352941, 'mean_word_length': 5.083798882681564, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Highly conductive barium iron vanadate glass containing different metal oxides

Abstract 20BaO·5ZnO·5Fe2O3·70V2O5 glass annealed at 450°C for 30 min showed a marked decrease in the electric resistivity (ρ) from 4.0×105 to 4.8 Ωcm, while 20BaO·5Cu2O·5Fe2O3·70V2O5 glass from 2.0×105 to 5.0 Ωcm. As for the conduction mechanism, it proved that n-type semiconductor model in conjugation with the small polaron hopping theory was most probable. Since ZnII and CuI have a 3d10-electron configuration in the outer-most orbital, Ga2O3- and GeO2-containing vanadate glasses were explored in this study. 20BaO·5Ga2O3·5Fe2O3·70V2O5 glass showed a less remarkable decrease of ρ from 4.5×105 to 100 Ωcm, and 20BaO·5GeO2·5Fe2O3·70V2O5 glass from 3.3×106 to 400 Ωcm. Activation energies for the conduction (Ea) of GeO2- and Ga2O3-contaning glasses before the annealing were respectively estimated to be 0.42 and 0.41 eV. It proved that barium iron vanadate glass with a smaller Ea value could attain the higher conductivity after the annealing at temperaures higher than the crystalization temperature.