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Barrier-injection transit-time diodes and transistors for terahertz generation and detection

We discuss the barrier-injection transit-time (BARITT) diodes and transistors which could be realized by modern silicon nanotechnology. The main advantage of such kind structures is that they guarantee a negative conductivity at THz frequencies even for rather strong scattering existing in realistic structures. The negative conductivity is crucial for generation. Unfortunately, in a diode the influence of the drain voltage on the height of the potential barrier near source contact is weak. The same weak is the variation in injection current. When a floating gate is inserted in the structure, the gate voltage with respect to the drain contact strongly operates over the barrier height under it and, therefore, injection current. This results in higher efficiency of generation. The oscillating current could be transmitted from the floating gate and the drain contact to a wave-guide (or antenna). THz radiation can be detected with the help of the same structures as used for generation. The basis of detection lies in the rectifying properties of the structures under consideration.