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Radiative lifetimes, quasi-Fermi-levels, and carrier densities in GaAs-(Ga,Al)As quantum-well photoluminescence under steady-state excitation conditions.

A quantum-mechanical calculations of the carrier densities, electron and hole quasi-Fermi-levels, and various radiative decay times in GaAs-(Ga,Al)As quantum wells is performed, under steady-state excitation conditions, as functions of the cw laser intensity, temperature, well widths, and acceptor distribution in the well. We consider the radiative recombination of electrons with free holes and with holes bound at neutral acceptors