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Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique

The heterostructure conduction band offset ΔEc in In0.08Ga0.92N/Al0.075In0.045Ga0.88N quantum wells (QWs) was characterized by capacitance–voltage (C–V) and deep-level transient spectroscopy (DLTS) measurements made on the QWs, which acted as the light-emitting active layer of GaN p–n light-emitting diodes (LEDs). The thermal emission energy of the In0.08Ga0.92N wells was found to be 0.21±0.01 eV. This corresponds to a conduction band offset of about 0.25±0.02 eV.