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Resonant-Tunneling Bipolar Transistors with a Quantum-Well Base

Heterostructure bipolar transistors with a quantum-well base incorporated a resonant-tunneling structure in the collector are proposed and studied theoretically. Static characteristics of the transistors are evaluated using the proposed analytical model. It is shown that the current-voltage characteristics and the collector current versus base current dependences can be ambiguous corresponding to bistability operation. The bistability effect is associated with the mobile electron space charge in the collector region. Direct on–off switching by the collector voltage or base current pulses is discussed.