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Wagging and stretching modes of N–H complexes in GaAsN grown by chemical beam epitaxy

The origin of N–H related local vibration modes (LVMs) in GaAsN grown by chemical beam epitaxy is discussed on the basis of the change in peak intensity caused by annealing. The peak areas at 973 and 3124 cm−1 increase as the annealing temperature increases. Their ratio is almost one, independent of the annealing temperature and time. On the other hand, the intensities at 960, 2952, 3014, and 3098 cm−1 decrease owing to annealing. Although the peak area at 960 cm−1 becomes half after annealing at 700 °C, those at 2952, 3014, and 3098 cm−1 to almost zero. These results indicate that the wagging mode at 973 cm−1 and the stretching mode at 3124 cm−1 are originated from the same N–H related defect in GaAsN, and that the wagging mode at 960 cm−1 does not correspond to the stretching modes at 2952, 3014, and 3098 cm−1.