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Detection of Hydrogen Peroxide Using rGO/PPy Nanocomposites in Silicon Dioxide Trench Embedded Field Effect Transistor

This work demonstrates the high-performance hydrogen peroxide (H<sub>2</sub>O<sub>2</sub>) sensing field-effect transistor (FET) using reduced graphene oxide - polypyrrole (rGO/PPy) nanocomposites. The SiO<sub>2</sub> trench type FET is fabricated using lithography and etching techniques. The fabricated SiO<sub>2</sub> trench structure was used not only for holding H<sub>2</sub>O<sub>2</sub> but also for sensing purpose. The morphology and structure of the rGO/PPy nanocomposites were analyzed and confirmed their bonding. The output electrical signal changes as the concentration of H<sub>2</sub>O<sub>2</sub> increases. The device shows a fast response of 5 s and is highly stable with excellent sensitivity. The detection limit obtained is 10 pM at appropriate signal-to-noise ratio (S/N) of the sensing electrical signal. The device is high selectivity towards H<sub>2</sub>O<sub>2</sub>. The device structure may be employed for other liquid sensing applications.