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Structural and optoelectronic properties change in Bi/In2Se3 heterostructure films by thermal annealing and laser irradiation

The amorphous materials are sensitive to external radiations and thermal annealing that brings changes in their structural and optical properties for optoelectronic applications. The present report shows the amorphous to crystalline structure transformation in Bi/In2Se3 by energy radiation and thermal annealing that modifies the linear as well as the nonlinear optical properties. The thermally evaporated Bi/In2Se3 film was subjected to 2.35 eV energy irradiation and 150 °C thermal annealing. The structural transition was probed by XRD, which revealed the formation of BiSe, Bi4Se3, and Bi2Se3 phases by replacing indium with an average crystallite size of ∼20 nm. The diffusion of Bi into In2Se3 host matrix modified the interfacial region as noticed from the field effect scanning electron microscopy pictures. The linear and nonlinear optical constants were evaluated from the UV–Visible data that show a significant change in the irradiated and annealed films due to the new phases. The change in direct and indirect bandgap is explained on the basis of density of defect states and degree of disorder. The significant change in the refractive index brings more freedom in designing multifunctional optoelectronic devices. The σopt and σelect changed noticeably with heat and energy treatment. The high value of χ3 (18.81 × 10−10 esu) for the Bi/In2Se3 film decreased significantly to 3.68 × 10−10 and 2.13 × 10−10 esu for the annealed and irradiated film. All the optical parameter changes due to annealing and irradiation are confined between the two-host materials In2Se3 and Bi/In2Se3. The corresponding changes were also observed in Raman spectroscopy data. The tuning of these linear and nonlinear parameters is useful for optoelectronics and photovoltaics.