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The point defect structure and its transformation in As-implanted ZnO crystals

The point defect structure of As-implanted ZnO crystals was investigated using diffuse x-ray scattering and spectroscopic methods. A dynamic picture regarding the defect structure transformation was revealed. The defect type, size and combination state experienced obvious changes during annealing. Before annealing the point defects distributed isolatedly and coexisted with dislocation loops. After annealing, AsO disappeared and other point defects either aggregated into large clusters or formed defect complexes including AsZn–2VZn whose ionization energy was measured and which was discerned as the main origin of p-type conductivity.