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Evidence for a linear kink effect in ultra-thin gate oxide SOI MOSFETs

In this paper, evidence will be provided for the existence of a new class of floating body effects, occurring in SOI MOSFETs in the linear operation regime and called here the Linear Kink Effects (LKE's). It will be shown that for a sufficiently large front-gate voltage V G , the transconductance g m exhibits a second peak, both for n- and p-channel devices. The effect is most pronounced for partially depleted (PD) n-MOSFETs. It occurs as well in fully depleted (FD) transistors, with the back-gate biased preferably into accumulation. Associated with the LKE in the drain current is a strong increase of the low-frequency noise spectral density S 1 . Similar as for the impact-ionization related noise overshoot, it is observed that the nature of the spectrum changes from 1/f-like to Lorentzian in the LKE region. It is finally shown that the switching off transients change their sign from negative to positive for V G on above the LKE threshold, giving evidence for the presence of majority carriers in the film, during the ON phase.