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Magnetic field-induced direct–indirect crossover in AlxGa1−xAs

We induce a direct–indirect band gap crossover in a single AlxGa1−xAs sample by using high magnetic fields. A reduction in the photoluminescence (PL) peak energy and onset of an asymmetric peak lineshape at magnetic fields >38 T result from a competition between the radiative recombination lifetime and the carrier migration time as the alloy becomes indirect. By analyzing the progression of the PL lineshape as the magnetic field is increased we show that the crossover is an alloy disorder-broadened, first-order phase transition.