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New power handling characterization for RF MEMS capacitive switches

This paper presents a new characterization method to measure the RF power handling of capacitive RF MEMS switches. Historically, the RF power handling was characterized by analyzing the pull-in and release voltage shift under several RF power settings. However, this technique is problematic especially because of possible charging under high DC voltages. We present a new measurement setup that includes capacitance measurement in parallel with the RF signal. This technique enables characterization of the RF MEMS switches in a non-destructive manner including a direct measure of the capacitance variation under RF power. This method is better aligned with the device requirements where the RF Power handling will be specified relative to a resulting capacitance change (analogous to a P1dB) and not a voltage pull-in related to the DC operation. In this paper, we will show the measurement setup, the theory and early measurements of a capacitive RF MEMS tuner in the open state in a series configuration. The results have shown small but significant differences between DC and RF measurement approaches up to 6.5W of input power.