{'fraction_non_alphanumeric': 0.014184397163120567, 'fraction_numerical': 0.001182033096926714, 'mean_word_length': 5.722222222222222, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Plasma Metallization Coating and Its Adhesion to Microwave Transistor Substrate—Part 1: Methods of Experimental Research

A previously proposed mechanism of adhesion of a plasma metal coating to a ceramic substrate is investigated experimentally. This adhesion mechanism is based on the increase in the concentration of structural defects (vacancies) and electron exchange interaction of a metal-oxide beryllium pair during the plasma thermal activation of the process. Given the brazing of ceramic products with hard solders in hydrogen, the coating composition for metallization is determined. The optimal temperature of reactive plasma metals coating for strong adhesion to the ceramic substrate is found. Methods to improve the technology of plasma vacuum metallization using ion-plasma magnetron sputtering and ion implantation are proposed.