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Analysis of in-well pumping of semiconductor lasers by microscopic gain calculations

Optically pumped semiconductor lasers are usually pumped via barrier states from which the generated carriers are relaxing into the quantum well (QW) states. Pumping directly in-well states seems to be an attractive alternative in some situations because it increases the spectrum of pump diodes suitable for a given emission wavelength [1]. For example, a record output for 850 nm vertical-external-cavity surface-emitting lasers (VECSEL) was demonstrated by using highly developed and relatively inexpensive pump diodes at 808 nm [1]. An additional benefit is the reduced quantum defect leading to a reduced thermal load.