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Beam filamentation and maximum optical power in high-brightness tapered lasers

In this work we use a numerical model to analyze the beam filamentation in tapered lasers with the goal of optimizing the epitaxial structure. The model self-consistently solves the steady state electrical and optical equations for the flared unstable resonator. This model has been applied to simulate the performance of InGaAs/InGaAsP tapered lasers emitting at 975 nm. We investigate the role of the active material properties (carrier induced index change, differential gain) and of the epitaxial design (optical confinement factor) on the filamentation process and on the maximum achievable power.