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Common-Drain Bidirectional 1200V SiC MOSFETs

Using commercially available SiC MOSFET dice, bidirectional MOSFETs were assembled and their electrical performance was tested. With proper gate biasing, the pair is capable of blocking at or near the rated value of the component MOSFETs in each direction. The pair conducts in both directions with an on-state resistance comparable to the sum of the constituent device resistances. With optimization of the component devices, this configuration promises to improve bidirectional switch performance beyond that of the simple assembled pair.