{'fraction_non_alphanumeric': 0.04293381037567084, 'fraction_numerical': 0.017889087656529516, 'mean_word_length': 4.656565656565657, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
SRAM yield enhancement with thin-BOX FD-SOI

The performance and yield of 6-T SRAM cells implemented in thin-BOX FD-SOI technology vs. bulk technology are compared via 3-dimensional (3D) atomistic process and device simulations and analytical modeling for SRAM yield estimation. Performance is enhanced due to the elimination of channel dopants, and variation due to gate-LER and RDF are suppressed, for FD-SOI technology. For the same cell area (∼0.07µm2), comparable SNM can be achieved with 30% higher write current, and SRAM yield is enhanced by ≫2 sigma.