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A hybrid CMOS/memristive nanoelectronic circuit for programming synaptic weights

In this paper a hybrid circuit is presented which comprises na noelectronic resistive switches based on the electrochemical memory effect (ECM) as well as devices from a standard 40nm-CMOS process. A closed ECM device model, which is based on device physics, was used for simulations allowing for a precise prediction of the expected I-V characteristics. The device is used as a non-volatile and/or programmable synapse in a neuromorphic architecture. Expected performance figures are derived such as write time as well as robustness with regard to variations of supply voltage and timing errors. The results show that ECM cells are prospective devices for hybrid neuromorphic systems.