{'fraction_non_alphanumeric': 0.011956521739130435, 'fraction_numerical': 0.0, 'mean_word_length': 5.181208053691275, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Self‐assembled formation of GaAsP nano‐apertures above InAs/GaAs quantum dots by the thermal diffusion of phosphorus

We present a novel structure of GaAsP nano apertures realized by employing the in situ thermal diffusion of phosphorus during epitaxial growth on top of quantum dot layers. Such structures may have direct device‐oriented applications for the selective injection of electrical current into the dots. AFM and cross‐sectional SEM images reveal that we are able to create elongated apertures in a diffusion layer of GaAsP by introducing a phosphorus flux during the growth, and that the apertures naturally form directly above the underlying dots. We also find that these nanoscale apertures are formed only when the distance between the top of the quantum dots and the diffusion layer is small enough, indicating that the aperture formation is due to the local strain field induced by the dots themselves.