{'fraction_non_alphanumeric': 0.012048192771084338, 'fraction_numerical': 0.0, 'mean_word_length': 4.942857142857143, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Photon spectrum analysis of hot carrier degradation in NMOSFETS

The photon spectrum is analysed for two types of LDD n-MOSFET. It is found that at a special wavelength the photon spectrum has close correlation with the degradation rate of transconductance or Vt shifts, independent of device sizes and stress conditions. Photon spectrum analysis is found to be an effective monitor for the hot carrier degradation.