{'fraction_non_alphanumeric': 0.023508137432188065, 'fraction_numerical': 0.0, 'mean_word_length': 5.224719101123595, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Statistical effects of plasma etch damage on hot-carrier degradation

During plasma etch steps, devices are exposed directly to plasma and charge collection/deposition onto aluminum or poly damage gate oxides. This damage results in higher subsequent hot-carrier degradation. Here, the statistical variations in waler-level hot-carrier degradations are investigated. Interface-trap formation is shown to be independent of antenna size across a wafer, while bulk oxide trapping center density is found to be highly dependent on the antenna size and type.