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Resistive Random Access Memory Behaviors in Organic–Inorganic Hybrid Ultra‐Thin Films

Resistive random‐access memory (ReRAM) has been considered for future memory devices, because of its low‐power consumption and a high degree of integration. In this study, hybrid (H‐) ReRAM devices are proposed using ultra‐thin (<10 nm) Al, Hf, and Zr hybrid films prepared via initiated chemical vapor deposition (iCVD). The hybrid films homogeneously consist of organic and inorganic components, which allow simultaneous metal atoms migration and oxygen vacancy generation. Regardless of hybrid matrix, H‐ReRAMs show highly reliable performance results (on/off ratio >104, endurance >106, retention >104 s), which are notable results compared to conventional ReRAM devices. The resistance changes of the conducting filament in the devices are observed under various temperature conditions to prove the heterogenous filament dynamics in the hybrid matrix. The conducting filament composes of a metallic component and oxygen vacancies give unique properties to H‐ReRAM devices, according to the combination of electrode and hybrid material. It has the potential to precise control of conducting filament by two different filament dynamics in the hybrid matrix. The H‐ReRAM is one of the candidates for alternative memory devices as well as neuromorphic and cognitive computing devices.