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Characterization of Interface in GaAs Epitaxial Wafer by Spatially Resolved Photoluminescence from Cleaved Face

We characterized the interface between the epitaxial layer and substrate of a GaAs wafer by measuring the microscopic photoluminescence (PL) on the cleaved face of the wafer. The intensity of the band-edge PL was higher in the epitaxial layer than in the substrate and locally decreased at the interface. This finding indicates that the non-radiative recombination centers are accumulated at the interface.