{'fraction_non_alphanumeric': 0.027777777777777776, 'fraction_numerical': 0.013888888888888888, 'mean_word_length': 5.324561403508772, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Si Diffusion in Compositional Disordering of Si-Implanted GaAs/AlGaAs Superlattices Induced by Rapid Thermal Annealing

The Si diffusion in Si-implanted GaAs/Al0.5Ga0.5As superlattices intermixed in the disordering process induced by rapid thermal annealing (RTA), is investigated by means of secondary ion mass spectroscopy (SIMS). The SIMS profiles indicate that no fast Si diffusion occurs during the disordering, and the disordering occurs when the Si concentration exceeds 1×1019 cm-3, which is about three times larger than the threshold value for the disordering by furnace annealing (FA). The number of Si atoms which are allowed to pass through the heterointerface is considered to be essential for disordering.