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Formation of YSZ Films By Thermal Annealing of Y/Zr Layers in Air

Abstract Homogeneous yttria stabilised zirconia films were synthesised using thermal annealing of Y/Zr layers of strictly controlled thickness in air in the temperature range 600 - 1000 ° C. Intermixing and oxidation kinetics were investigated. Secondary ion mass spectrometry analysis was used to record the depth profiles of the most important elements across the thickness of the synthesised films. The characterisation of film structure was carried out by X-ray diffraction. Surface roughness and topography were monitored by atomic force microscopy and scanning electron microscopy. Results showed that there is a correlation between surface topography and mixing and oxidation kinetics. The existence of columnar boundaries and a nanocrystalline structure in the films seem to affect the oxygen penetration mechanism significantly.