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Photoluminescence Properties of Self-Assembled InAs Quantum Dots Grown on (001) and (113)B GaAs Substrates by Molecular Beam Epitaxy under a Slow Growth Rate Condition

Self-assembled InAs quantum dots (QDs) were grown on (001) and (113)B GaAs substrates by molecular beam epitaxy (MBE) under a slow growth rate condition of 0.0364 µm/h. Low-temperature (4 K) photoluminescence (PL) lineshape of the (001) QD sample is strongly dependent on the InAs coverage, which is considered to come from suppression of the carrier injection from the wetting layer (WL) into the QDs when the InAs coverage is below 2.6 monolayer (ML). The suppressed carrier injection might be caused by a potential barrier arising from thickness modulation of the WL near the edge of QD. On the other hand, PL (4 K) emission from the WL is dominant for the (113)B QD samples with InAs coverages of 2.6–3.4 ML, suggesting that larger potential barrier exits between the QD and WL comparing to the (001) QD sample.