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Recombination dynamics in self‐assembled InP/GaP quantum dots under high pressure

We have investigated the recombination dynamics in self‐assembled InP/GaP quantum dots by means of time‐resolved photoluminescence measured at low temperatures between 2 and 100 K and high hydrostatic pressure up to 2 GPa. Due to the high‐power levels for pulsed excitation, the quantum dot emission exhibits two components with typical decay times of 5 and 30 ns, corresponding to direct Γ– Γ and X– Γ interband recombination processes, respectively. These decay times appear to be independent of pressure. At a very low pressure of about 0.1 GPa the intensity of the dot emission drops abruptly relative to that of the wetting layer indicating a switching off of a carrier relaxation channel. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)