{'fraction_non_alphanumeric': 0.035940803382663845, 'fraction_numerical': 0.014094432699083862, 'mean_word_length': 5.96078431372549, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Simultaneously Induced Self‐Assembly of Poly(3‐hexylthiophene) (P3HT) Nanowires and Thin‐Film Fabrication via Solution‐Floating Method on a Water Substrate

A single‐step fabrication of thin film of conjugated polymers (CPs) cannot be employed because inducement of self‐assembly of CPs and a thin‐film fabrication process are both required. This study introduces a simple and facile one‐pot strategy for fabricating uniform, large‐area organic semiconducting thin film without complex process. During the solvent evaporation of floated poly(3‐hexylthiophene) (P3HT) solution on water substrate, well‐dissolved P3HT chains are self‐assembled into 1D P3HT nanowires (NWs) with formation of thin film simultaneously. Through systematic transmission electron microscopy (TEM) experiments, this study also reveals for the first time the unique self‐assembly mechanism behind the formation of P3HT NWs from the incorporation of P3HT nanoparticles (NPs). In addition, highly uniform organic–inorganic hybrid thin films consisting of well‐defined P3HT/quantum dots (QDs) hybrid NWs can be created easily via a solution‐floating method by dropping P3HT and QDs dissolved solution. The floated P3HT NWs thin film on the surface of water can be easily transferred onto a Si wafer, bestowing advantages for the fabrication of a high‐performance organic field‐effect transistor device with a carrier mobility of 0.0856 cm2 V−1 s−1.