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Pocket engineered electrostatically doped tunnel field effect transistor

In this paper, we propose the use of pockets to improve the performance of an electrostatically doped double-gate tunnel field effect transistor. The required n-i-p+structure for tunneling is formed on a thin intrinsic silicon film by electrostatic doping based on charge plasma concept. The source, drain and gate electrodes of different workfunctions are employed to form the p-type, n-type and intrinsic regions. Analysis using 2D TCAD simulations suggest that the proposed structure can significantly overcome the low ION and ambipolarity problem in conventional dopingless tunnel field effect transistor (DLTFET). The n-type pocket in channel and p-type pocket in source provides noteworthy improvement in the transfer characteristics of pocket engineered (PE) DLTFET. The proposed PE-DLTFET offers higher ION(2.4x10−5A), high ION/IOFF ratio ∼109and lower subthreshold slope (SS) of 42 mV/dec. We also propose an n-type pocket in the channel adjacent to the drain region to reduce the inherent ambipolarity in DLTFET. The results show that PE-DLTFET effectively suppresses ambipolarity and offers 25x higher ION as compared to DLTFET, making it a viable candidate for switching applications.