{'fraction_non_alphanumeric': 0.03108003108003108, 'fraction_numerical': 0.023310023310023312, 'mean_word_length': 4.6, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Optical and Luminescent Properties of Highly Oriented Nanocrystalline Gd 2-x Eu x O 3 Thin Films

Highly crystalline and transparent Eu-doped Gd 2 O 3 thin films were produced through a modified sol-gel method that did not require the use of any chelating agent. The effect of the atomic fraction of Eu 3+ ions (‘x’ =0.05-0.30) on the structural, optical and luminescent properties has been studied. X-ray diffraction studies showed the preferential growth of Gd 2-x Eu x O 3 thin films along the (400) plane corresponding to the cubic phase. UV-vis measurements revealed the high film transparency of the films in the visible region and a band gap value of 5.3eV. It has also been observed that the luminescence properties of the films were strongly dependent on both, the excitation wavelength and Eu concentration; the most efficient excitation conducive to red luminescence was achieved at the absorption band of Gd 2 O 3 host (229nm). Under this condition all films exhibited strong red emission that is characteristic of Eu 3+ ions. The emission intensity was also dependent on the doping level; the most intense luminescence was obtained at ‘x’=0.15. The drop in the luminescence intensity observed for ‘x’ values higher than 0.15 was attributed to quenching concentration effect.