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Controllable Modification of SiC Nanowires Encapsulated in BN Nanotubes

A simple vapor-solid route for the synthesis of BN-SiC nanocables having open tip-ends and unmatched features was discussed. These features allow to selectively perform intratube operations and to independently modify the geometry and chemistry of the semiconducting SiC cores. Electrical-transport measurements performed on individual nanostructures indeed confirmed the perfect insulating nature of the BN nanotube sheaths. BN nanotube sheaths were confirmed to exhibit excellent electrical insulation of the encapsulated semiconducting nanowires.