{'fraction_non_alphanumeric': 0.01673101673101673, 'fraction_numerical': 0.0, 'mean_word_length': 5.884955752212389, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Enlarged growth window for plasmonic silicon-doped InAs using a bismuth surfactant

Semiconductors such as InAs with high dopant concentrations have a variety of applications, including as components of mid-infrared optoelectronic devices. Unfortunately, growth of these materials by molecular beam epitaxy is challenging, requiring high growth rates and low growth temperatures. We show that the use of a bismuth surfactant improves silicon incorporation into InAs while simultaneously reducing the optical scattering rate, increasing the carrier mobility, reducing surface roughness, and enabling growth at higher substrate temperatures and slower growth rates. We explain our findings using microscopic theories of dopant segregation and defect formation in III-V materials.