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Beryllium-Implanted P-Type GaN with High Carrier Concentration

We report the results of beryllium implantation in Mg-doped GaN to obtain a high hole concentration and lower activation energy for Mg. The metal organic chemical vapor deposition (MOCVD)-grown Mg-doped GaN samples were implanted with Be ions at two different energies of 50 keV and 150 keV and a dose of 1014 cm-2. The implemented samples were subsequently annealed at 1100°C for 60 s. The annealed samples showed an increase of hole concentration by three orders of magnitude from the non-implanted value of 5.5×1016 to 8.1×1019 cm-3 as determined by Hall measurement. The activation energy of Mg dopants for the implanted annealed samples estimated from the temperature dependence of the photoluminescence data is about 170 meV, which is nearly 30% lower than that for the as-grown samples.