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Improving the internal quantum efficiency of green InGaN quantum dots through coupled InGaN/GaN quantum well and quantum dot structure

The InGaN quantum dot (QD) is promising for use in green light-emitting diodes and laser diodes owing to its small strain and weak quantum-confined Stark effect. However, its small carrier capture cross section still sets a limit to its internal quantum efficiency (IQE). Tunneling-enhanced carrier transfer in a coupled InGaN/GaN quantum well (QW) and quantum dot structure has been studied on the basis of temperature-dependent and time-resolved photoluminescence. It is found that carriers can tunnel from a shallow QW to deep QDs at room temperature. Compared with the conventional single-QD layer, the IQE of the QDs can be enhanced more than two times to about 45%.