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Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure

This paper reports that the Si+ self-ion-implantation are conducted on the silicon-on-insulator wafers with the 28Si+ doses of 7×1012, 1×1013, 4×1013, and 3×1014 cm−2, respectively. After the suitable annealing, these samples are characterized by using the photoluminescence technique at different recorded temperatures. Plentiful emission peaks are observed in these implanted silicon-on-insulator samples, including the unwonted intense P′ band which exhibits a great potential in the optoelectronic application. These results indicate that severe transformation of the interstitial clusters can be manipulated by the implanting dose at suitable annealing temperatures. The high critical temperatures for the photoluminescence intensity growth of the two signatures are well discussed based on the thermal ionization model of free exciton.