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Relative intensity noise of silicon-based quantum dot lasers

This work experimentally investigates the relative intensity noise (RIN) of semiconductor quantum dot (QD) lasers epitaxially grown on silicon. Owing to the low threading dislocations density and the p-modulation doped GaAs barrier layer in the active region, a RIN level as low as −150 dB/Hz at 9 GHz is demonstrated. The results show that the p-doping decreases the high-frequency RIN and the damping factor. In the latter, a damping factor up to 30 GHz at three times the threshold is extracted from the RIN spectrum along with a K-factor of 1.7 ns. These results pave the way for high speed and low noise QD devices for future integrated photonics technologies.