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Localized electric-field-enhanced low-light detection by a 2D SnS visible-light photodetector

Due to their excellent carrier mobility, high absorption coefficient and narrow bandgap, most 2D IVA metal chalcogenide semiconductors (GIVMCs, metal = Ge, Sn, Pb; chalcogen = S, Se) are regarded as promising candidates for realizing high-performance photodetectors. We synthesized high-quality two-dimensional (2D) tin sulfide (SnS) nanosheets using the physical vapor deposition (PVD) method and fabricated a 2D SnS visible-light photodetector. The photodetector exhibits a high photoresponsivity of 161 A⋅W−1 and possesses an external quantum efficiency of 4.45 × 104%, as well as a detectivity of 1.15 × 109 Jones under 450 nm blue light illumination. Moreover, under poor illumination at optical densities down to 2 mW⋅cm−2, the responsivity of the device is higher than that at stronger optical densities. We suggest that a photogating effect in the 2D SnS photodetector is mainly responsible for its low-light responsivity. Defects and impurities in 2D SnS can trap carriers and form localized electric fields, which can delay the recombination process of electron-hole pairs, prolong carrier lifetimes, and thus improve the low-light responsivity. This work provides design strategies for detecting low levels of light using photodetectors made of 2D materials.