{'fraction_non_alphanumeric': 0.023508137432188065, 'fraction_numerical': 0.0018083182640144665, 'mean_word_length': 5.325714285714286, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Optoelectronic properties of multiple quantum barriers nano-scale avalanche photo diodes

The important optoelectronic properties like spectral response, excess noise characteristics, time and frequency response of multiple quantum barrier (MQB) nano-scale avalanche photodiodes (APDs) based on Si~3C-SiC material system have been studied. A self-consistent simulation method based on quantum drift-diffusion model has been presented. Simulation results show that the Si~3C-SiC MQB nano-APDs are capable of detecting significantly longer wavelengths as compared to infrared flat Si APDs. The multiplication gain and excess noise factor (ENF) of the MQB APDs have been calculated by varying the number of quantum barriers (QBs). The numerically calculated ENF values of MQB APDs have been compared with the ENF of Si flat conventional APDs of similar dimensions and it is observed that the use of QBs leads to significant reduction in ENF of the APDs. Simulation results also show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the Si counterparts.