{'fraction_non_alphanumeric': 0.031496062992125984, 'fraction_numerical': 0.031496062992125984, 'mean_word_length': 4.569343065693431, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Sharp interface of undoped Ge/SiGe quantum well grown by ultrahigh vacuum chemical vapor deposition

An undoped Ge/SiGe quantum well has been grown by ultrahigh vacuum chemical vapor deposition, and the sharp interface with a characteristic length of 0.6 nm is confirmed by cross-sectional transmission electron microscopy and electron energy loss spectroscopy. In addition, a 2D hole gas with a high mobility of up to 4.6 × 105 cm2/V s is achieved in the Hall-bar shaped field effect transistor, showing a low percolation density of 8.7 × 1010 cm−2, a light hole effective mass of 0.071 m0, and a high effective g-factor of 11.3. These favorable properties confirm the benefits of high-quality interface, which has promising applications in the field of qubits.