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Pulsed Laser Deposited Lead Zirconate Titanate Thin Films for Micro Actuators

Lead zirconate titanate (Pb(ZrxTi1-x)O3): PZT) films were deposited by pulsed laser ablation on Si/SiO2/Ti/Pt substrates with one seed layer of sol-gel derived PZT at a deposition rate of 0.7 µm/h and substrate temperature of about 500°C. The fabricated films showed the perovskite PZT phase without pyrochlore phase. The dielectric constant was approximately 1580 when measured at 1 kHz. The values of the saturation polarization, remanent polarization and coercive field of the 0.8-µm-thick film were about 46.6 µC/cm2, 24.6 µC/cm2 and 36.4 kV/cm, respectively. Furthermore, a lower tensile stress (approximately 33 MPa) was obtained by wafer curvature measurements before and after PZT deposition. The piezoelectric coefficient d31 was measured using a bimorph-beam and a value of 13 pC/N was obtained.