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Impact of DSOI back-gate biasing on circuit conducted emission

This paper presents the impact of FDSOI back gate biasing on circuit conducted emission. The back gate bias can modulate front gate electrical characteristic, and changing the circuit performance and power consumptions dynamically. Meanwhile, the electromagnetic emission of circuit is changing with the back gate variation. A ring oscillator is tested to illustrate the relation between back gate biasing and the conducted emission of the ground pin. The results shows the strong relation of the conducted emission with the front gate electrical parameters.