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Terahertz Frequency Doubler Based on Multi-anodes Monolithic Integrated GaAs Diode

This paper proposes two terahertz monolithic integrated doublers in the terahertz band (170 GHz, 340GHz), have been designed and fabricated on a 15μm thick GaAs film substrate. The front stage frequency multiplier adopts eight anodes and the rear stage adopts six anodes. Measurement has shown that the efficiency is greater than 20% in the frequency range of 157-177GHz (First stage) with the input power of 300mW, and the peak efficiency at 170GHz is 26.25%. The simulation showed efficiency is greater than 40% in the frequency range of 330-350GHz(Second stage) with the input power of 60mW, and the peak efficiency at 341GHz is 46%.