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TeraHertz Quantum Interference Transistors Using One-dimensional Modfet-type Electron Waveguides

This paper describes a novel quantum interference transistor (QUIT) structure consisting of two MODFET-type electron waveguides. The current-voltage and transconductance characteristics have been calculated for 0.2 pm channel length device operating at 4.2 O K . Our computations have shown the unity current gain cut-off frequency (fT) greater than 1 THz. In addition, the transconductance per unit gate width of the 1-D QUIT is about two times better than ' the 2-D QUIT reported in literature. The maximum drain voltage is 30 mV, which is the threshold voltage for polar optical phonon emission in GaAs. The channel conductance is found to be in the order of 2e2/h, which is the fundamental conductance of mesoscopic systems.