{'fraction_non_alphanumeric': 0.03741935483870968, 'fraction_numerical': 0.005161290322580645, 'mean_word_length': 4.7481481481481485, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Method for Accelerated Determination of GaAs PHEMT Power Slump Reliability

We have overcome difficulties associated with using the Single Device Lifetime Extraction (SDLE) method for analyzing power slump in PHEMTs. This allows rapid on-wafer assessment of power slump. We find that the voltage acceleration factor has the form exp(beta/(Vdg+Vbi)), where beta ~ 200 V is a typical acceleration parameter. We find that Ig is not an accelerator, in that this acceleration factor, which does not explicitly depend on Ig, is accurate over a wide voltage range over which Ig varies by a large factor (e.g., 8). That the acceleration factor in the on-state explicitly depends only on Vdg (and not Ig) has practical utility, since on-state Ig is relatively obscure to the designer.