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Effect of reverse bias annealing on the properties of AlGaN/GaN MIS-HEMTs with recessed-gate structure

In this work, we report on high positive threshold voltage and respectable drain current density obtained from our AlGaN/GaN MIS-HEMTs with recessed-gate structure. After subjecting the device to reverse bias annealing, on top of improved subthreshold swing and leakage characteristics, its threshold voltage shifted from −0.2 V to +3.5 V. We have also confirmed that these desirable device characteristics remain unchanged after weeks of storage at room temperature.