{'fraction_non_alphanumeric': 0.035668789808917196, 'fraction_numerical': 0.012738853503184714, 'mean_word_length': 5.093023255813954, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A simple empirical model for calculating gain and excess noise in GaAs/AlξGa1-ξAs APDs (0.3≤ξ≤0.6)

In this paper, we present a simple empirical model for calculating gain and excess noise in heterojunction GaAs/AlξGa1-ξAs APDs (0.3≤ξ≤0.6), without going through the relatively complicated and time consuming Monte Carlo simulation, commonly used for such devices. In this model, we present a set of empirical formula which can predict a distribution function for ionization path length for a given electric field throughout multiplication region. To determine the optimized values of the adjustable parameters used in our empirical model, we train a back-propagation neural network. The results are in excellent agreement with those obtained by the random path length (RPL) technique.