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Proximity correction simulations in ultra-high resolution x-ray lithography

This paper follows previous demonstrations of demagnification by bias in ultra-high resolution proximity x-ray lithography. The demagnification, ×1–×6, is achieved without lenses or mirrors. Two-dimensional proximity corrections, applied to rectangular mask shapes, are simulated. A V-shaped inrigger, cut into the mask, is particularly effective. When a typical range of broadband illumination wavelengths is used, several beneficial effects are observed when the gap is held at the ‘critical condition’. Maintaining fine resolution, oscillations—due to Fresnel diffraction parallel to the longer dimension of a rectangle—are virtually eliminated, and the image intensity is made uniform by the elimination of bright spots near the ends of a rectangle.