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Improvement of electrostatic discharge current-handling capability for high-voltage multi-finger nLDMOS devices with self-triggered technique

The structure of the conventional laterally diffused metal-oxide semiconductor (LDMOS) is modified to be fit for application of a self-triggered technique in multi-fingered high-voltage LDMOS devices to enhance the electrostatic discharge (ESD) current-handling capability. Device simulation and transmission line pulse testing are employed to analyze the working mechanism and ESD performance of the proposed device with self-triggered technique based on a 0.5 µm 24 V CMOS DMOS (CDMOS) process. According to the measurement results, compared to traditional gate-grounded LDMOS, the secondary breakdown current ( It2) of the proposed device with low-trigger-voltage triggering finger can be drastically improved from 2.43 A to 5.57 A, and its trigger voltage ( Vt1) is reduced from 59.91 V to 48.18 V.