{'fraction_non_alphanumeric': 0.019693654266958426, 'fraction_numerical': 0.0087527352297593, 'mean_word_length': 5.450704225352113, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Silicon Superlattice on SOI for High Mobility and Reduced Leakage

In this paper, simultaneous NMOS drive current enhancement and gate leakage reduction via a novel silicon superlattice on SOI high mobility channel replacement layer is demonstrated. The technology, which is termed MST-SOI, has demonstrated in excess of 20% mobility enhancement, up to 30% drive current enhancement and significant gate leakage reduction compared to a baseline SOI process.