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Performance of LIGBTs built on SIMOX substrates using double epitaxial layer dielectric isolation technology

In this paper, the measured characteristics of lateral power devices fabricated using the novel double epitaxial layer dielectric isolation (DELDI) technology is presented for the first time. The results show enhanced breakdown and on-state performance of lateral insulated gate bipolar transistors (LIGBTs) in DELDI technology in comparison to conventional SOI based structures.