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Dynamic oxide current relaxation spectroscopy for thin insulator MOS structure under Fowler-Nordheim stresses

A new method is presented for separating and characterizing interface and oxide traps generated in an MOS structure under Fowler-Nordheim stress. The oxide trap relaxation measurement performed in dynamic voltage mode can determine the density, centroid, and generation/capture cross-section of the oxide traps without the double current-voltage technique. Analytical expressions for computing the interface and oxide traps are derived and experimental results are presented. Two interface and two oxide traps generated under Fowler-Nordheim stress are obtained by the new technique.