{'fraction_non_alphanumeric': 0.0187207488299532, 'fraction_numerical': 0.0093603744149766, 'mean_word_length': 5.173076923076923, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effect of Nd doping on the resistive switching properties of BiFeO3 thin films

Abstract Bismuth ferrite (BiFeO3) and Nd-doped BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions. Different resistive switching behaviours have been observed on the pure and doped BiFeO3 thin films. The leakage current is deceased after Nd doping, which benefits the fabrication of high-density resistive switching memory with low power consumption. The conduction mechanisms are discussed to understand the effect of Nd doping on the resistive switching properties of BiFeO3 thin films.