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Fabrication and characterization of Mg2Si pn-junction Photodiode with a ring electrode

We have fabricated Mg2Si pn-junction photodiodes with an Au-ring electrode and a SiO2 passivation layer by means of a lift-off photolithography process. Current-voltage (I V) characteristics of the photodiodes showed obvious rectifying behavior at room temperature. The ideality factor of n determined from the slope of I V characteristics was 1.76 1.92. The photodiode showed a photoresponse with threshold energy of approximately 0.6 eV under a zero-bias condition. The intensity of peak photoresponse was improved approximately three times compared with the opaque Au-circular electrode type Mg2Si photodiode previously reported.