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Spin Polarization and Magnetization of Hensler Alloys Co2TiGal-xSnx(x = 1.0, 0.5)

Spintronic devices, such as magnetic random access memory (MRAM), are built from materials with high spin polarization. Half-metals which have only one spin band at the Fermi level are necessary to improve the performance of the spintronic devices. Co-based Heusler alloys are predicted relatively high Curie temperature and high spin polarization from the first-principle band calculations. We therefore focus on the spin polarization and magnetization of Co-based Heusler alloys Co2TiGa1-xSnx.