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Fabrication, Characterization and Analysis of Concentrically Strained Silicon Nanowires With Extremely-High Hole Mobility

The findings from the time-of-flight (TOF) experiment for strained silicon nanowires are reported in this article, in combination with numerical simulations demonstrating new physical features involved in the quasi-quantum regime. The drift velocity of valence holes is demonstrated to exceed greatly that of conduction electrons. These experimental data are accurately reproduced by our simulations, revealing a dramatic reduction in the hole’s effective mass as well as a significant extension of the mean-free time between two consecutive random scattering events due to combined effects of both quantum confinement and biaxial strain. Many-body theory is further introduced for calculating elastic-scattering rate of impurities with the inclusion of static screening under the random-phase approximation. Dark current, photo-current and photoluminescence spectra are all measured in our experiments, in addition to direct TOF experiment by employing a Ti-sapphire mode-locked femtosecond laser, and their data are fully analyzed and physically explained by using both simulations and many-body theory. Our observation that the Einstein’s relation does not hold true for 1-D transport under a strong electric field is supported by a quantum-statistical calculation. Our discovery with a very large hole mobility is expected to play a key role in establishing a much more straight-forward technical path towards high-performance CMOS and radio-frequency amplifiers than current ones.