{'fraction_non_alphanumeric': 0.027280477408354646, 'fraction_numerical': 0.0247229326513214, 'mean_word_length': 5.486187845303867, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Enhancing electrical conductivity and electron field emission properties of ultrananocrystalline diamond films by copper ion implantation and annealing

Copper ion implantation and subsequent annealing at 600 °C achieved high electrical conductivity of 95.0 (Ωcm)−1 for ultrananocrystalline diamond (UNCD) films with carrier concentration of 2.8 × 1018 cm−2 and mobility of 6.8 × 102 cm2/V s. Transmission electron microscopy examinations reveal that the implanted Cu ions first formed Cu nanoclusters in UNCD films, which induced the formation of nanographitic grain boundary phases during annealing process. From current imaging tunneling spectroscopy and local current-voltage curves of scanning tunneling spectroscopic measurements, it is observed that the electrons are dominantly emitted from the grain boundaries. Consequently, the nanographitic phases presence in the grain boundaries formed conduction channels for efficient electron transport, ensuing in excellent electron field emission (EFE) properties for copper ion implanted/annealed UNCD films with low turn-on field of 4.80 V/μm and high EFE current density of 3.60 mA/cm2 at an applied field of 8.0 V/μm.