{'fraction_non_alphanumeric': 0.03799019607843137, 'fraction_numerical': 0.007352941176470588, 'mean_word_length': 4.835714285714285, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Improvement in Device Performance of a-InGaZnO Transistors by Introduction of Ca-Doped Cu Source/Drain Electrode

This letter reports the effects of Ca doping into Cu films, which was used as a source/drain (S/D) electrode for high performance amorphous In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) with a low resistive-capacitive delay time. The IGZO TFTs with Ca-doped Cu S/D exhibited three times higher saturation mobility (16 cm2/Vs) and substantially lower subthreshold gate swing of 0.39 V/decade than the control devices with pure Cu S/D. The SIMS profile and cross-sectional transmission electron microscopy showed that Ca effectively prevented the Cu atoms from diffusing into channel IGZO region presumably as a result of Ca-O bond formation, which is responsible for their superior device performances.