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Ferroelectric PLZT thin films prepared by chemical solution deposition

Abstract Transparent polycrystalline PLZT (x/65/35) thin films were prepared using spin-coating technique of complex alkoxide precursor solutions by both 2ME and IMO sol-gel processes. Effects of lanthanum source and amount as well as annealing temperature on the ferroelectric and electro-optic properties were investigated. Microstructure and crystallization behavior were examined using FE-SEM, AFM and XRD. Ferroelectric hysteresis, optical transmittance and linear electro-optic coefficient values of the films were also measured. The measured remanent polarization and coercive field values were 5-35 μC/cm2 and 40-70 kV/cm, respectively. Effective differential Pockels coefficient was approximately 2.4×10−12 m/V.