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Variable Energy Gap in Oxygenated Amorphous Cadmium Telluride

A new material, oxygenated amorphous cadmium telluride, is introduced into the II-VI semiconductor compounds family. Amorphous films of this material have been grown by a radio frequency sputtering deposition technique, using a controlled plasma (Ar-O-N) on glass slides substrates positively dc biased. We show that the bandgap of the films can be changed in a controlled way in the range from 1.48 to 2.02 eV depending on the amount of oxygen present in the sample.