{'fraction_non_alphanumeric': 0.0358814352574103, 'fraction_numerical': 0.0093603744149766, 'mean_word_length': 5.056603773584905, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Formation of epitaxial Hf germanide/Ge contacts for Schottky barrier height engineering

Germanium (Ge) is a promising candidate semiconductor for channel material of low power consumption and high performance field-effect transistors (FETs) alternative to silicon because of high hole and electron mobilities and good process affinity of Ge for the integration on Si nanoelectronics. One of serious issues of Ge for the practical FET application is a high parasitic resistance at metal/n-type Ge (n-Ge) contact since its high contact resistivity owing to a high Schottky barrier height (SBH) of metal/n-Ge interface around 0.5–0.6 eV [1,2].