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Characterization of Semiconductor Device Structures with Ultrathin Layers by Raman Scattering

In this paper, the authors show that Raman spectroscopy can provide useful more detailed information on composition of mixed crystals, carrier concentration and mobility and depth profiles of ultrathin crystalline films and multilayer structures. It can serve for investigation of layers with thicknesses of tens of angstroms in a multilayer structure. As a proof , the authors used AlGaAs compound and AlGaAs/GaAs structures. The method can be extended to other semiconductor compounds.