{'fraction_non_alphanumeric': 0.023642172523961662, 'fraction_numerical': 0.015335463258785943, 'mean_word_length': 4.909433962264151, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Energy band diagrams of PtSi-Si barrier with a heavily doped surface nanolayer formed by recoil implantation

The development of Schottky barrier technology for creation of IR-photodetectors is caused by reduction of a potential barrier height used by formation of heavily-doped thin layer near to the semiconductor surface. We propose for this aim to form heavily-doped nanolayer in p-Si by recoil implantation of boron. Boron nm-thick film was deposited on the Si sample surfaces by cathode sputtering. After that the samples were irradiated by high intensity Al+ beams extracted from pregenerated explosion-emission plasma. The samples are examined by secondary ion mass-spectrometry (SIMS). It is experimental established that profile of impurity distribution in surface layer is exponential. The doping concentration at the silicide/silicon interface is 1018-1020 cm-3 and thickness of surface layer is 8 - 12 nm. The energy band diagrams of a PtSi - p- Si Schottky barrier with high-doped surface layer formed by recoil implantation were calculated for different parameters of barrier. It is shown, that effective barrier heights in PtSi-Si with recoil implantation formed surface 10 nm layer at surface concentration order 1020 cm-3 is reduced to 0.13 eV, corresponding to a cutoff wavelength of 9.5 micrometers . Thus, the cutoff wavelength of the PtSi Schottky infrared detectors has been extended to the long wavelength infrared region by incorporating a p+ doping layer with exponential profile of impurity distribution at the silicide/silicon interface.