{'fraction_non_alphanumeric': 0.020752269779507133, 'fraction_numerical': 0.0, 'mean_word_length': 5.655172413793103, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Synchrotron based in situ characterization during atomic layer deposition

Synchrotron based x-ray fluorescence (XRF) and grazing incidence small angle scattering (GISAXS) are demonstrated to be excellent in situ methods for monitoring atomic layer deposition (ALD) processes. XRF allows to identify and to quantify the amount of material deposited, whereas GISAXS is a powerful technique for monitoring nanoscale morphology. Three case studies are discussed where these in situ techniques are used to investigate specific aspects of ALD processes that are of relevance for applications in micro-electronics: the initial growth of gate oxides, the initial nucleation during metal ALD processes, and the penetration of ALD deposited materials into nanoporous low-k oxides.