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Investigation of the influence of unwanted micro lenses caused by semiconductor processing excursions on optical behavior of CMOS photodiodes

In this work the influence of nanoscale particles caused by processing excursions during back end of line (BEOL) processing on top of the photodiode active region was examined. To investigate the influence of the particles on the photodiode performance, wafer level optical responsivity measurements were done. In addition to the measurements the effect of the particles was simulated with a simplified model based on a modified transfer matrix method (MTMM)1 . The simulation and measurements are in very good agreement with each other and lead to the conclusion that even though some decrease of sensitivity was observed, the overall system variability was reduced by the presence of particles. Furthermore, the influence of the dielectric stack layer thickness variability on the photon flux density is reduced.