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Temperature effects on fracture behavior of notched silicon film specimen

We performed tensile tests on single-crystal-silicon film at temperatures ranging from RT (room temperature) to 600/spl deg/C. We made notched specimens by using a focused ion beam (FIB) process. The fracture toughness did not change from room temperature to 60/spl deg/C. However, between 60/spl deg/C and 80/spl deg/C, it rapidly increased to almost double that at room temperature, and it saturated at temperatures higher than 80/spl deg/C. Some specimens tested at 150/spl deg/C and 300/spl deg/C showed the nonlinear relationships between stress and strain. Shapes of the fractures that occurred from 80/spl deg/C to 600/spl deg/C were clearly different from the fracture shape at 60/spl deg/C. These results suggest that dislocation motion occurred even at low temperatures near 80/spl deg/C.