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Low Temperature Silicon Epitaxy by Partially Ionized Vapor Deposition

Silicon films were formed on single crystal silicon substrates by partially ionized vapor deposition. Single crystal films were obtained on (111) p-type silicon substrates at room temperature when the silicon ion current density, which was about 25% of the total incident silicon atoms, exceeded 80 µA/cm2. Anneal behaviors of epitaxial films grown at room temperature and 400°C at an ion current density of 100 µA/cm2 were investigated by He+ backscattering measurements and by measurement of change in resistivity.