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Influences of Pressure and Substrate Temperature on Epitaxial Growth of γ-Mg2SiO4 Thin Films on Si Substrates

An epitaxial γ-Mg2SiO4 thin film can be a good buffer between the Si substrate and some oxide thin films. For high temperature superconducting multilayer structures, hopefully it can be taken as an insulating layer to replace the widely used MgO film. To explore such possibilities, we carry out systematic studies on the influences of pressure and substrate temperature on the epitaxy of γ-Mg2SiO4 thin films grown on Si (100) substrates using rf magnetron sputtering with an Mg target of purity of 99.95 percent. With the substrate temperature kept at 500 °C and the pressure changing from 10 Pa to 15 Pa, in the XRD spectra the γ-Mg2SiO4 (400) peak grows drastically while the MgO (200) peak is suppressed. Keeping the pressure at 15 Pa and increasing the temperature from 500°C to 570°C further can improve the film epitaxy, while working at 780°C and 11 Pa seems to give very good results. X-ray photoelectronic spectroscopy and ϕ scan are used to characterize the stoichiometry, crystallinity, and in-plane growth of the samples.