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Reliability characteristics of MIM capacitor studied with ΔC-F characteristics

We propose a simple method to monitor the quality of MIM capacitor. The differences in the slope of C-F curve at low and high frequency are found to be a good indicator showing the difference in the reliability characteristics of MIM capacitor. Asymmetric interface trap generation near top or bottom electrode could be monitored and clear difference was observed at various dielectric thickness, measurement temperature and stack structures.