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Enhanced model for short channel MOSFETs

The accuracy of the existing metal-oxide-semiconductor-field-effect-transistor (MOSFET) models used in simulations of the integrated circuits can be enhanced by restoring some of the device physics which has previously been eliminated in the original models. The model modifications include an improved treatment of mobility degradation phenomena and an improved approximation for the saturation voltage. These modifications result in excellent agreement with the experimental data for both n- and p-channel transistors having effective channel lengths as small as 0.5 μm. In contrast to previous models the agreement with the measured data is achieved by using a physically acceptable value for the charge carrier saturation velocity and a smaller number of fitting parameters.