{'fraction_non_alphanumeric': 0.02066772655007949, 'fraction_numerical': 0.0047694753577106515, 'mean_word_length': 4.833333333333333, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
SiO2 Etch Rate Modification by Ion Implantation

It is well known that etch rate of dielectric thin films, such as silicon dioxide, increases after ion implantation. A study of the structural damage created in SiO2 films by ion implantation can be found in references [,]. It is reported that nuclear collision of implanted ion with target ions produces a relevant rearrangement of in SiO2 target network: Si and O target atoms are moved from their original positions to new positions where original local atomic coordination is not recovered. As final result, damage consists mainly of Si-O broken bonds and non-bridging oxygen.