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Kinetic redundancy in dye-sensitized solar cells: the use of high-bandgap metal oxide barrier layers

Control of charge interfacial charge transfer is central to the design of photovoltaic devices. A an elegant approach to control those dynamics, is the use of an insulating metal oxide blocking layer at a nanocrystalline inorganic / organic semiconductor interface. We show that the conformal growth of a ~1 nm thick overlayer of MgO on a preformed nanocrystalline SnO2 film results in a ~4-fold retardation in the rate of charge recombination at such an interface This observation shows a good correlation with the current/voltage characteristics of dye sensitised nanocrystalline solar cells fabricated from such films, with the MgO coating resulting in ~ 50% improvement in overall device efficiency.