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Growth and electrical properties of deuterated TGS produced by the rotating disc technique

The growth of fully deuterated D(3) TGS, both alanine-doped and undoped, is described. The rotating disc method of growth was used with modified apparatus to facilitate crystal handling and reduce loss of deuteration in solution. Some characteristic types of cracking occur when highly deuterated material grown on undoped crystal were subjected to extensive electrical measurements. A selection of comparative results is reported, and attention is drawn to the effect of thermal cycling on the doped material.