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Junctionless Impact Ionization MOS: Proposal and Investigation

We propose a novel junctionless impact ionization MOS (JIMOS) on a p-type silicon film using charge plasma concept. This device does not have metallurgical junctions and requires no impurity doping for creating the source and drain. This makes the JIMOS combine the benefits of an impact ionization MOS (IMOS) (steep subthreshold slope) and a junctionless field-effect transistor (JLFET) (low thermal budget process). Using 2-D simulations, we show that the performance of the JIMOS is analogous to that of a corresponding IMOS in which the source and drain regions are created by impurity doping. The proposed idea can pave the way for fabricating the IMOS using a low thermal budget process similar to that of a JLFET.