{'fraction_non_alphanumeric': 0.0186799501867995, 'fraction_numerical': 0.0, 'mean_word_length': 5.045112781954887, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
New characterization technique for oxide degradation in power VDMOSFET based on split C-V measurements

For characterization of gate oxide degradation in irradiated VDMOSFETs various I-V and charge-pumping techniques are routinely used. Because of limitations of these methods and disagreements between their results, in this paper a new approach to characterize the VDMOS transistors is proposed. The method is based on split C-V technique. The structure of the split C-V characteristics of a power VDMOSFET is studied by different experiments and numerical modeling, and explained. The impact of gate oxide and interface damage on the split C-V curves is analyzed. A technique for separate measurements of radiation-induced oxide damage in the channel region and in the epitaxial region is introduced.