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Influence of oxygen content on hardness of Cr(N,O) thin films deposited by an RF sputtering method

Cr(N,O) thin films were deposited by radio frequency reactive unbalanced magnetron sputtering on Si(100) or glassy carbon substrates. In this paper, the influence of oxygen content on hardness of Cr(N,O) thin films was investigated. The compositional analysis was carried out by Rutherford backscattering spectroscopy. It was found that these thin films contained up to 44at.% of oxygen. Phases in the samples were determined by X-ray diffraction. Cr(N,O) thin films show only peaks based on CrN. The microstructure was observed by utilizing a transmission electron microscope. At <1at.% of oxygen, crystallite size was approximately 100nm. Then, in accordance with increasing of oxygen content, crystallite size was decreased. The hardness of thin films was measured by using a nanoindenter. The micro hardness was changed with varying the oxygen content and the microstructure such as crystallite size. Thus, it was thought that the hardening on Cr(N,O) thin films was caused by solution hardening and/or Hall-Petch relationship.