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Field emission behaviors of CsPbI3 nanobelts

In the present study, the field emission (FE) behaviors of CsPbI3 nanobelts were reported, which were synthesized via a one-step facile solvothermal method. The obtained CsPbI3 nanobelts were single crystalline in nature with a typical growth direction along [100]. It was disclosed that the valence band maximum (VBM) and conduction band minimum (CBM) vs. vacuum level of the CsPbI3 nanobelts were located at −4.86 and −2.16 eV, respectively, and their work function (Φ) was calculated to be of 3.56 eV. The as-grown CsPbI3 nanobelts exhibited outstanding field emission (FE) characteristics with a low turn-on field (Eto) of ∼2.62 V μm−1 and a high field enhancement factor of 3553, representing their potential applications in field emission display devices.