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In situ study of strain and composition of InGaN/GaN multi-quantum-well nanowires

The molecular beam epitaxial (MBE) growth of twenty-period InGaN/GaN multi-quantum-well (MQW) nanowires was investigated by in situ X-ray reciprocal space mapping (in situ RSM). The evolution of strain, composition, and their inhomogeneities during the growth significantly varied with increasing number of QWs. After the growth of the ninth QWs, InGaN was tensilely strained with poor crystalline quality as inferred from the diffraction peak position and shape. At the same time, another peak emerged at the higher indium composition, suggesting the segregation of InN in the MQW nanowires.