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The formation of optically active centers in silica glass during implantation of bismuth ions

Optically transparent SiO2 glass was implanted in a pulsed mode with 30 keV Bi-ions with different doses: 1016, 5·1016, 1017, 3·1017 pcs/cm2. The depth of penetration of ions into the studied SiO2 samples was estimated using the SRIM software package and is in the depth range of 10-60 nm. Optical absorption spectra were recorded on a vacuum spectrophotometer McPherson VuVAS 1000 Pl. It has a non-elementary form, which indicates the presence of active centers and structural defects associated with intrinsic defects of silicon dioxide glass, as well as with bismuth ions.