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Energy band alignment of SnO2/SrTiO3 epitaxial heterojunction studied by X‐ray photoelectron spectroscopy

(200) SnO2//(111) SrTiO3 (STO) epitaxial heterojunctions were fabricated using the laser molecular epitaxy technique. Sharp junction interface was confirmed by the high‐resolution transmission electron microscopy. The valence band offset and conduction band offset of the SnO2/STO heterojunction were determined to be 0.85 ± 0.20 and 0.45 ± 0.20 eV using XPS, respectively. It is found that a type‐II band alignment forms at the SnO2/STO interface. Copyright © 2015 John Wiley & Sons, Ltd.