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Drift-diffusion modeling and simulation of four terminal ballistic rectifier

In this paper we simulate two-cross junction based novel rectifier called ballistic rectifier by employing drift-diffusion model using Silvaco Atlas Software. The electrical (DC and RF) characteristics of the device have been characterized at room temperature demonstrating operation at the frequency of 1 THz. The results have been analyzed considering different device dimensions and surface charge densities of InGaAs based heterostructure at various temperatures. It has been observed that rectification of the device deteriorates with the increase in temperature due to the reduction in mean free path of the charge carriers.