{'fraction_non_alphanumeric': 0.04508566275924256, 'fraction_numerical': 0.024346257889990983, 'mean_word_length': 5.0, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Electrochemical growth of ZnSe thin films, characterization and heterojunction applications

In this study, ZnSe semiconductor thin film was attained using the electrodeposition (ECD) method. ZnSe thin films were grown on ITO (indium tin oxide) and p-Si substrates using zinc perchlorate (Zn(ClO4)2), selenic acid (H2SeO3) and selenium dioxide (SeO2) compounds. ZnSe thin films grown with the ECD method were produced by applying −0.6 V potential value on ITO for one hour and −1.4 V potential value on p-Si for the same period. The structural properties and optical characteristics of the grown samples were examined with the help of x-ray diffraction and absorption spectrums. The current-voltage (I-V) characteristics of the n-ZnSe/p-Si heterojunction were examined, and the rectification behavior was observed. Ideality factor, operation voltage, barrier height and reverse-bias saturation current were calculated from the current-voltage graphics. The ideality factor was calculated as 1.76, operation voltage as 0.201 V, barrier height as 0.654 eV and reverse-bias saturation current as 2.407 × 10−8 mA.