{'fraction_non_alphanumeric': 0.03134796238244514, 'fraction_numerical': 0.004702194357366771, 'mean_word_length': 4.605263157894737, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Damage evaluation of inductive coupling plasma etching of InGaAsP-InP single quantum well

We investigated photoluminescence (PL) intensity change of InGaAsP/InP single quantum well after etching the upper InP by inductive coupling plasma (ICP) etching using CH/sub 4//H/sub 2//Cl/sub 2/ gas chemistry. We found that there is a time delay since the plasma light up till the etching begins, and PL intensity increased largely by the exposure to ICP before the etching begins. After the InP etching begins, PL intensity decreased rapidly. We found that hydrogen is defused to the active region in the sample that the PL intensity decreased.