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Study of NdAlO3 Dielectric Thin Films by Sol-Gel Method

Electrical properties and microstructure of NdAlO3 thin films prepared by sol-gel method on Si substrates at different preheating temperatures have been investigated. The structure of the materials is studied using X-ray diffraction, and the microstructure is analyzed using scanning electron microscopy. The diffraction pattern showed that the deposited films exhibited an amorphous microstructure. The dependence of the physical and electrical characteristics on various preheating temperatures was also investigated. At an preheating temperature of 400°C, the NdAlO3 films with 65 nm thickness possess an leakage current density of 9.5×10−7 A/cm2 at an electrical field of 10 kV/cm.