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Comment on “Boson peak in amorphous silicon: A numerical study”

(Dated: July 27, 2001) Based on molecular-dynamics simulations using the Stillinger-Weber interatomic potential, Finkemeier and von Niessen recently proposed that the presence of the Boson peak in a–Si can be attributed to coordination defects [Phys. Rev. B 63, 235204 (2001)] and claimed agreement with earlier simulation results for models of a–Si with voids [Phys. Rev. B 61, 5376 (2000)]. In this Comment we clarify this issue and suggest that (i) the atomistic models of Finkemeier and von Niessen do not represent realistic amorphous silicon and (ii) the results for the models with voids do not support the hypothesis that coordination defects are the main cause of the appearance of the Boson peak in this material.