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Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations

The source of carrier compensation in metalorganic vapor phase epitaxy (MOVPE)-grown n-type GaN was quantitatively investigated by Hall-effect measurement, deep-level transient spectroscopy, and secondary ion mass spectrometry. These analysis techniques revealed that there were at least three different compensation sources. The carrier compensation for samples with donor concentrations below 5 × 1016 cm−3 can be explained by residual carbon and electron trap E3 (EC − 0.6 eV). For samples with higher donor concentrations, we found a proportional relationship between donor concentration and compensating acceptor concentration, which resulted from a third source of compensation. This is possibly due to the self-compensation effect.