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Calculation of the Deposition Rate for Metal Organic Chemical Vapor Deposition (MOCVD)

We calculate the deposition rate of TiO2 for MOCVD. Using an equation and multi-layer perceptron neural network, we present a model to simulation of deposition rate. Susceptor and source temperature, flow rate of the carrier gas for the precursor and chamber pressure are important factors to our simulation. Our results have good agreement with experimental data.