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Electrical properties of stacking electrodes for flexible crystalline semiconductor photonic devices

We report here electrical properties of low-temperature-stacked electrodes for large-area flexible photonic devices, based on single-crystalline InP nanomembrane (NM) transfer and stacking processes. Au, Al and ITO electrodes were investigated. An excellent ohmic contact was demonstrated on the stacked InP NM–ITO electrode, with a measured contact resistivity of 0.45 Ω cm2. Two types of flexible InP solar cells were also fabricated and characterized, based on the stacked InP NM–ITO and InP NM–Al contacts, respectively. The efficiency of solar cells with ITO as back contact is five times higher than that with Al as back contact. Such low-temperature energy-efficient NM transfer and electrode-stacking techniques can be applied to a wide range of flexible thin film photonic devices.