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GaAs pHEMT Cascode Low Noise Amplifier for Wireless Applications

104 Abstract—This paper presents low noise amplifier (LNA) for wireless application which has been implemented in a 0.15μm GaAs pHEMT technology. The LNA was designed using cascode topology with feedback techniques which produces better gain and good stability over entire frequency. At 2.4 GHz, this amplifier achieves power gain of 23 dB, isolation of 35 dB and input reflection coefficient of -12 dB at 2.4 GHz. With operating voltage supply at 3V, the total current consumptions for the LNA is 18 mA.