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The Effect of Semiconductor Morphology on the Spatial Resolution of ZnO Based Light-Addressable Potentiometric Sensors

Light-addressable potentiometric sensors (LAPS) measure ac photocurrent at electrolyte-insulator-semiconductor (EIS) and, more recently, electrolyte-semiconductor structures to produce spatiotemporal images of chemical or biological analytes, electrical potentials and impedance. One of the most important properties for LAPS is spatial resolution, which determines the smallest features that can be resolved in LAPS images. In this work, the use of nanostructured ZnO for LAPS was explored. The effect of ZnO morphology on the spatial resolution was studied with a LAPS setup. The best resolution of 2 µm was achieved in ZnO films produced by aerosol-assisted chemical vapour deposition (AACVD).