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A High Integrity and Low Resistance Ti-Polycide Gate Using a Nitrogen Ion-Implanted Buffer Layer

A new titanium-disilicide/polysilicon gate system using a nitrogen ion-implanted buffer layer which has high dielectric strength and low resistivity has been developed. The buffer layer of a nonstoichiometric silicon nitride layer approximately 30 nm-thick is formed with a N2+ dose below 5.0×1016 cm-2 at an acceleration energy of 15 keV. This layer can prevent intermixing of a titanium-disilicide film and a polysilicon film even after high-temperature annealing. Therefore, it can improve dielectric strength without increasing series resistances through those films.