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Thickness Dependence of H Radical Treatment of Si Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition Using SiF4/SiH4/H2 Gases

Thickness dependence of H radical treatment of silicon thin films deposited using SiH4/H2 and SiF4/SiH4/H2 plasmas has been investigated. In both cases, H radicals have caused etching and crystallization. In the case of films less than 60 Å thick, almost pure etching occurred. In the case of films more than 600 Å thick, a crystallized layer under a roughened layer remained after etching. These results indicate that crystallization effect occurs in deeper layers than those in which etching occurs.