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Interferometric assessment of laser-induced damage to semiconductors

It is important to determine the onset of damage as well as the extent of the damage area when materials are illuminated by intense laser radiation. In this work, an optical interferometric technique was used to assess laser-induced damage in semiconductor materials based on the three-dimensional, topographic characteristics of the damage site. Both antireflection coated and uncoated materials were evaluated for variations of fluence level, focused spot size, and laser repetition rate. The interferometric technique was non-contact and nondestructive in nature, providing a high-resolution capability of assessing damage levels on the surfaces of the materials.