{'fraction_non_alphanumeric': 0.038461538461538464, 'fraction_numerical': 0.029411764705882353, 'mean_word_length': 4.67948717948718, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Study of InGaAs/AlGaAs/GaAs semiconductor lasers with a buried mesa

An InGaAs/AlGaAs/GaAs laser heterostructure with a buried mesa was MOCVD grown on a GaAs (100) substrate at a temperature of 750°C. 100-μm-aperture-width lasers were fabricated on its basis and their light characteristics were studied. The achieved total maximum output power (from both facets) was 2.1 and 23 W in the continuous wave and pulsed lasing modes, respectively.