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Study of the distribution of a straight CuO nanorod structure inserted in Al-doped ZnO layers for deposition on a flexible substrate

In this study, the optimum distribution of a straight CuO nanorod structure inserted in an AZO (Al-doped ZnO) thin film is achieved; it has a minimum resistance of 1.25 × 10−3 Ω · cm, and the average transmittance in the range 400–800 nm is about 82%. The best figure of merit for the AZO/CuO nanorod/AZO layer is 1.04 × 10−3 (Ω−1). Due to fewer Al and Zn atoms diffusing into the interface between the seed layer and the nanorod structures with a reduced density of disorder in the seed layer are observed, using high-resolution transmission electron microscopy, enabling the formation of straighter nanorod structures. After etching the surface of the AZO seed layer on a flexible substrate at 50 W etching power for under 3 min, followed by 20 s Cu deposition in Ar/O2 ambient, the optimum distribution of the straight CuO nanorod structure is formed; this indicates that the application of AZO thin films to CuO nanorod on a soft transparent conductive electrode is viable.