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Evaluation of a photoresist process for 0.75-micron g-line lithography

A consistent 0.75 micron lithography process was developed for implementation in an existing technology environment. Prolith/2 modeling parameters were experimentally measured and photoresist simulations were performed to gain confidence in the modeling program. Experimental results fulfilled a proposed set of production process requirements, and a consistent three-quarter-micron, g-line process can be implemented in the manufacturing environment.