{'fraction_non_alphanumeric': 0.026905829596412557, 'fraction_numerical': 0.0, 'mean_word_length': 5.380952380952381, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Verification of point-spread-function-based modeling of an extreme-ultraviolet photoresist.

A crucial component of lithographic modeling is the resist. Resists typically used at extreme-ultraviolet (EUV) wavelengths are derivatives of deep-ultraviolet chemically amplified resists. Models that describe these resists are often very complicated and are dependent on a large number of free parameters. Point-spread-function-based resist modeling serves as a simple alternative. I show this type of modeling to be a viable technique at EUV wavelengths by directly comparing modeling results with a variety of printing metrics, including process windows and isodense bias.