{'fraction_non_alphanumeric': 0.03567035670356704, 'fraction_numerical': 0.025830258302583026, 'mean_word_length': 4.732394366197183, 'pattern_counts': {'":': 0, '<': 1, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
High Electron Mobility Silicon Films Grown on Sapphire at High Growth Rate

Electron mobility of N-type (100) plane silicon films 1 µm thick on (11̄02) sapphire substrate has been investigated associating with the growth rate. High electron mobility, near 600 cm2V-1s-1, has been achieved at 10∼20 µ/min high growth rate. Dislocation etch pits and stacking fault patterns have been revealed by the newly developed chemical etching. The dislocation density decreases at low growth rate region (<2 µ/min) with increasing growth rate. At high growth rate, more than 10 µ/min, stacking fault density decreases. The in-depth profiles of auto-doped aluminum have been obtained by the ion mass spectrometry. As a result, mobility enhancement at the high growth rate is assigned to stacking fault decrements in the films.