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Performance estimation of molecular crossbar architecture considering capacitive and inductive coupling between interconnects

Scaling silicon MOSFETs beyond the 10 nm regime has posed challenges to device and circuit engineers. Research has begun in the earnest to find possible replacements for silicon. Molecular devices are being extensively studied and their electrical characteristics are being measured. Crossbar architecture in such nanoscale devices has lately gained tremendous popularity. This paper examines the issue of interconnect parasitics in such molecular crossbar architectures.