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Atomistic modeling on carbon co-implant with silicon pre-amorphization implant technique

In this paper, boron transient enhanced diffusion in silicon pre-amorphization implant (PAI) and carbon co-implant PAI is investigated via kinetic Monte Carlo approach. The damages induced by Si-PAI and carbon co-implant are calculated. Boron implantation and subsequent annealing are thereafter performed. The simulation implies that carbon co-implant PAI reduces the amount of interstitial near the surface when compared with Si-PAI and that carbon co-implant with silicon PAI reduced TED effectively.