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Actually Mimicking of Neuron Action Potential by A Single RRAM Device

In this paper, the transient behavior of RRAM device under pulse-SET operation is used to mimic neuron action potential accurately. By studying the effect of pulse parameters including rising time, holding time and falling time on the output voltage waveform, we summarized a method to mimic the action potential of real neuron by adjusting proper bias on resistive device precisely. Since this RRAM device resistance hasn’t been changed after pulse operating, so there is no need to generate reverse RESET voltage, which reduces the complexity of peripheral circuits. In addition, only one single RRAM device is involved in this operation, indicating that this method is capable to minimize the number of devices to form electronic neurons without increasing the complexity of circuit and the area of chip.