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Chemical Vapor Deposition of Cu Film on SiO2 Using Cyclopentadienylcoppertriethylphosphine

Chemical vapor deposition of Cu film on SiO2 has been studied using cyclopentadienylcoppertriethylphosphine (C5H5CuP(C2H5)3), which contains no oxygen atom itself. The deposited Cu films had complete (111) preferred orientation for deposition temperatures below 450°C. From Auger electron spectroscopy measurements, no simultaneous incorporation of oxygen during the deposition has been confirmed. Relatively low temperature deposition is preferable to reduce the condensation of deposited Cu.