{'fraction_non_alphanumeric': 0.019895287958115182, 'fraction_numerical': 0.008376963350785341, 'mean_word_length': 5.128205128205129, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
High-Q Spiral Inductor Design on Silicon Substrate

This paper presents the realization of a phenomenal Q-value increment as high as 122% for 4 nH spiral inductors on a silicon substrate. The loss mechanisms of parasitic effects on the Q-factor have been studied to improve Q design. The dramatic improvement in the Q value resulted from optimizing the doping level and film thickness of a poly shield layer combined with proton implantation. The shielding effect of poly-silicon and the semi-insulating characteristics of a proton-bombarded substrate have added 37% and 58% increments to the Q value of the inductors, respectively. The combination of the two methods has multiplied their individual contributions rather than just adding them. The technique proposed in this work shall become a critical measure for putting inductors on silicon substrates with superior performance for silicon-based radio frequency integrated circuit (RFIC) applications.