{'fraction_non_alphanumeric': 0.01303780964797914, 'fraction_numerical': 0.014341590612777053, 'mean_word_length': 5.2439024390243905, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Optical and structural characteristics of ZnO films doped with gallium

The ZnO films have been produced on the monocrystalline sapphite substrates (0001) by the pulsed laser deposition method. The photoluminescence spectra of these films have been obtained. The dependence of ZnO films transmission on the gallium admixture concentration has been determined for the spectral region of 200 to 3200 nm. it has been ascertained that the increase in gallium admixture is responsible for the shift of fundamental absorption band edge to the blue, and for the reduction in ZnO films transparency in the IR region. The dependence of the crystallographic parameters (lattice constant C) on the gallium admixture concentration and on the deposition parameters has been found.