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Thermal stability of magnetron sputtering amorphous carbon nitride films

In order to study thermal stability of amorphous carbon nitride films, R F magnetron sputtering method was used to deposit the samples which were annealed up to 900 ℃ in vacuum. Fourier Transformation Infrared, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were carried out to investigate the variation in compositional and structural properties of the films. It is found that the nitrogen atoms are bound to sp, sp~2 and sp~3 hybridized carbon atoms in as-deposited films. Thermal stability of CN bonds in the CN_x films is closely related to annealing temperature. Annealing studies show that CN_x films have better thermal stability in the annealing temperature range of less than 600 ℃, while above 600 ℃ the CN_x films become very unstable. Annealing can lead to the disruptions of bonding between C and N atom and a significant nitrogen loss of the films with the increase of annealing temperature. As a consequence, a larger fraction sp~2 C bonding occurred while the graphitization evolved with thermal annealing in the CN_x films due to the conversion from sp~3 C to sp~2 C.