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Phosphorous Doping of Nanostructured Crystalline Silicon

Nano-textured silicon, known as black silicon (bSi), is attractive as an excellent photon trapping properties. bSi can be produced using simple one-step fabrication reactive ion etching (RIE) technique. In this study, we present recent results of doping of nano-structured crystalline silicon surfaces and compared their properties to planar silicon. We doped planar, KOH-etched random pyramid and RIE nano-structured silicon surfaces with phosphorous oxychloride (POCl 3 ) in the temperature range 850-1000 o C for 15 and 20 min, respectively. Sheet resistance measurements show slight differences in doping density between planar, KOH pyramidal and bSi structures. bSi samples have lower sheet resistance, pointing to higher doping density presumably due to the higher surface area. These results can be used to optimize doping processes for industrial production of bSi solar cells.