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Quantitative STEM Imaging and Multislice Simulation of Stacking Fault Defects for Exciton Trapping in GaAs

Control of defects in bulk semiconductors such as GaAs is essential to realize novel excitonic phases for emerging quantum devices. In these systems, stacking fault (SF) defects are common, leading to local variations in optical properties, but the exact configuration of such defects and their interaction with excitons are not fully understood. Here we describe the use of aberration-corrected scanning transmission electron microscopy (STEM) imaging to directly examine SF defects in the GaAs system. In particular, we quantify the structure and properties of several SF configurations through multislice image simulations based on ab initio calculations. We show that this approach can reveal significant differences in exciton trapping behavior and suggest ways to control quantum systems.