{'fraction_non_alphanumeric': 0.021551724137931036, 'fraction_numerical': 0.0, 'mean_word_length': 5.277027027027027, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Void Formation Mechanism Related to Particles During Wafer-to-Wafer Direct Bonding


 Achieving a void-free bonding interface is an important requirement for the wafer-to-wafer direct bonding process. The two main potential mechanisms for void formation at the interface are (i) void formation induced by gas, such as condensation by-products caused by the bonding process or outgassing of trapped precursors, and (ii) void formation induced by physical obstacles, such as particles. In this work, emphasis is on the latter process. Particles were intentionally deposited on the wafer prior to bonding to study the kinetics of the physical void formation process. Void formations induced by particles deposited on different dielectrics bonding materials were analyzed using scanning acoustic microscopy and image software. The void formation mechanism is then discussed along with the wafer bonding dynamics at room temperature.