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Nature and origin of dark defects in GaAs LED's

Dark defects of GaAs LED's diffused with Zn through coated SiO2films are observed in EBIC images as well as in EL images. The results of etch-pit observations have shown that some dislocations involved in the initial crystal are pinned by the diffused Zn atoms and multiply under a stress induced during the diffusion process, It is concluded that the dark defects are attributed to the dislocation loops where minority carriers recombine nonradiatively.