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Improved bipolar cascade laser characteristics by optimization of InP electron stopper layers

In order to design InP-based edge-emitting bipolar cascade lasers, we have developed a fully consistent transport model compatible with tunnel highly-doped junctions. We perform the simulation of single-mode laser structures and show the influence of doped InP layers surrounding the tunnel junctions on the characteristics of the devices. While increasing their width we analyze the reduction of current leakage but also the backward consequences on the optical characteristics. An asymmetric electron confining structure enables to obtain 230% external efficiency with a good optical confinement.