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Influence of the surface electric field on carrier transfer into InGaAs/GaAs single quantum wells

Photoluminescence and photoluminescence excitation spectra of InGaAs/GaAs single quantum well structures with quantum wells located at different distances from the surface have been studied at 2 K. The role of the surface electric field in carrier transfer into a quantum well is demonstrated. Characteristic oscillations related to the energy relaxation of photoexcited carriers in the GaAs barrier have been observed in the quantum well photoluminescence excitation spectra. Oscillations due to relaxation of non-thermalized electrons appear when the carrier transfer time is shorter than the characteristic time of electron-electron interaction. Hot-hole energy relaxation manifests itself when the transfer time is comparable to the radiative lifetime of the carrier in the GaAs barrier.