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A two-dimensional numerical model for low frequency noise in short channel MOSFETs

Numerical implementation of a two-dimensional, physics-based low frequency noise model for MOSFETs is presented. Both the number-induced and mobility-induced current perturbations caused by the interaction of the channel carriers with the oxide states are considered. The model takes into account the high lateral field effects and is applicable to short channel devices. Two-dimensional device structure and electrical data are obtained by process simulator SUPREM and device simulator MEDICI. The mobility is experimentally measured and modeled with empirical models. The physical parameters, oxide trap density and mobility scattering parameter, are fitted to the experimental data. The numerical model has been successfully used to predict the low frequency noise characteristics of devices with drawn gate lengths down to 0.1 /spl mu/m.