{'fraction_non_alphanumeric': 0.02925531914893617, 'fraction_numerical': 0.026595744680851064, 'mean_word_length': 5.491379310344827, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Preparation of SrBi2Ta2O9 Ferroelectric Thin Films by Liquid Source Misted Chemical Vapor Deposition Method Using Inorganic Salt Solution

A liquid source misted chemical vapor deposition (LSMCVD) system was used to deposit SrBi2Ta2O9 ferroelectric thin films on Pt/TiO2/SiO2/Si substrates using strontium nitrate, bismuth nitrate and fluorine tantalum acid as the starting ingredients. Citric acid, ethylene glycol, and ethylenediaminetetraacctic acid were employed as chelating agents to form homogeneous and stable sol. A density, homogenous, crack-free and c-axis oriented SrBi2Ta2O9 thin films were prepared successfully and the resultant thin film exhibits the ferroelectric properties of 2Pr of 3.8 C/cm2, 2Ec of 60kV/cm at ±3.5 V, respectively.