{'fraction_non_alphanumeric': 0.03963133640552995, 'fraction_numerical': 0.034101382488479264, 'mean_word_length': 4.569230769230769, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Drift and Hysteresis Effects on AlN/SiO2 Gate pH Ion-Sensitive Field-Effect Transistor

The nonideal and unstable factors of AlN-based ion-sensitive field-effect transistor (ISFET) devices including the drift and hysteresis effects have been investigated in this study. The drift and hysteresis of AlN-based pH-ISFET devices have been measured using a constant current constant voltage (CCCV) readout circuit. The drift rates were obtained by long-time monitoring for 12 h in pH = 1, 3, 5, 7, 9, and 11 buffer solutions, which indicated that the drift rate increased with the pH value. The hysteresis effect was investigated by exposing the AlN gate ISFET in pH = 7–3–7–11–7 loop cycles with loop times of 960 s, 1920 s and 3840 s, and the magnitudes of hysteresis of 1.0, 1.5 and 4.5 mV were obtained, respectively. The temperature coefficient of hysteresis was found to be approximately 0.234 mV/°C. In addition, it was also found that the hysteresis width with pH started from acid side is smaller than that started from basic side, which results in an asymmetric hysteresis effect.