{'fraction_non_alphanumeric': 0.02316076294277929, 'fraction_numerical': 0.01226158038147139, 'mean_word_length': 4.88, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Application of redox doping in OTFTs

Molecular redox dopants are tested concerning their application to organic thin-film transistors (OTFT). Here we report on the feasibility of solution processing of molecular-doped transport layers, showing high air-stability of solutions and layers. We apply capacitance spectroscopy to investigate the interface of intrinsic and electrically doped layers. We also show that there is virtually no dopant migration in real devices, even when high electric fields up to 300 kV/cm2 are applied for 1000 h. We report on p- and n-type on OTFTs with silver contacts. The application of injection layers based on redox dopants improves the measured field-effect mobility by about 2 orders of magnitude.