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Observation of photoconductive gain in InGaAs/InP p-i-n quantum-well electroabsorption photodetectors

Summary form only given. The author reports the first observation of photoconductive gain in a p-i-n photodiode, and present a novel extended theory of photoconductivity that successfully describes these experimentally observed gains. These gains were first observed during a detailed study of quantum well electroabsorption photodetectors (QWEPs) for use in wavelength monitoring applications for fiber optic sensing and telecommunications. The epitaxial structure of one of these QWEPs is shown. Dimensions and doping levels shown are nominal values, except for the average well and barrier widths, which have been measured using a field-emission scanning electron microscopy technique.