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Characterization of anodic fluoride films on Hg1-xCdxTe

Experimental results concerning the properties of anodic fluoride films grown on HgCdTe (O.2 xO.3) are presented and discussed. The analysis of the growth rate and XPS measurements indicate that the films are composed of a mixture of Cd, Hg and Te fluorides, together with unreacted HgTe and elemental Te. The films are characterized by some of their optical, electrical and chemical properties. Capacitance—voltage measurements of MIS devices are employed to determine the electronic properties of the anodic fluoridelllgCdTe interface. The results show that a positive and unstable charge density is present at the interface.