{'fraction_non_alphanumeric': 0.023688663282571912, 'fraction_numerical': 0.0, 'mean_word_length': 5.5054945054945055, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effect of W doping on bipolar resistive switching behavior of TiN/W:NbOx/Pt device

In our study, resistive switching characteristics of TiN/ W:NbOx/Pt with tungsten doping concentration are investigated. We demonstrated that an increase of oxygen vacancies with increasing the concentration of W doping in W:NbOx films. The W:NbOx specimens show bipolar resistive switching and switching current could be controlled by tungsten doping concentration in NbOx. It is concluded that oxygen vacancies concentration plays an important role in bipolar resistive switching characteristic of W:NbOx.