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AlGaN pn junctions

AlGaN pn homo‐ and heterojunctions were fabricated on silicon carbide substrates by metalorganic chemical vapor deposition. AlN concentration in AlGaN layers ranged from 2 to 8 mol %. Mesa structures were made by reactive ion etching. Electroluminescence (EL) from AlGaN pn junctions was studied. EL peaks associated with near band‐to‐band transition in AlGaN were detected. The minimum wavelength of EL peak of ∼348 nm (hν∼3.56 eV, 300 K) was measured for a p‐Al0.08GaN0.92/n‐Al0.06Ga0.94N heterojunction. The dependence of the photon energy of the edge EL peak on AlN concentration in AlGaN was measured.