{'fraction_non_alphanumeric': 0.04426002766251729, 'fraction_numerical': 0.022130013831258646, 'mean_word_length': 4.8861788617886175, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Photoinjection Barriers at Chalcogenide/Se Interfaces

The photoinjection of holes from As-Se-Te alloys into Se has been studied in Se/chalcogenide/Se/poly-N-vinylcarbazole (PVK) multilayered samples. The field dependence of the photoinjection currents was found to obey the Richardson-Schottky emission law. The Schottky coefficients and the activation energies of injection were determined, keeping the field dependence of the hole transport in the PVK layer separate from that of the photoinjection currents. The former agreed approximately with the theoretical values. The latter were calculated to be 0.1 eV, 0.3 eV and 0.4 eV at ∼105 V/cm field, for Se/PVK, As2Se2Te/Se, and As2Se1.5Te1.5/Se interfaces; respectively.