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Strain-controlled Selective-area Growth of InGaAsP Films on InP

InGaAsP layers were selectively grown using a parallel-stripe-pair mask. Although growth rate enhancement of as high as 1.8 was measured, there was no evidence indicating that the selectively grown films were compressively strained, as in conventional selective-area growth. Calculated results using the gas-phase diffusion model agreed with the experimental results. We attribute the only slightly strained film with high growth rate enhancement to the optimal period of the repeated parallel-stripe-pair mask pattern as well as the opening width and mask width. The period of the pattern has not previously been explicitly considered in conventional selective-area growth.