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Effect of Bilayer Period of Atomic Layer Deposition on the Growth Behavior and Electrical Properties of Amorphous In-Zn-O Film.

This study reports on the effect of a bilayer period on the growth behavior, microstructure evolution, and electrical properties of ALD deposited In-Zn-O (IZO) films, fixing the ALD cycle ratio of In-O: Zn-O as 9:1. Here, the bilayer period is defined as the total number of ALD cycles in one supercycle of In-O and Zn-O by alternately stacking Zn-O and In-O layers at a temperature of 220 °C. IZO films with a bilayer period from 10 to 40 cycles, namely, IZO [In-O: Zn-O = 9:1] to IZO[36:4], result to form an amorphous phase with a resistivity of 4.94 × 10-4 Ω∙cm. However, by increasing the bilayer period above 100 cycles, the IZO films begin to form a mixed amorphous-nanocrystalline microstructure, resulting from the limited intermixing at the interfaces. Concomitantly, the overall film resistivity is considerably increased with a simultaneous decrease in both the carrier mobility and the concentration. These results reveal not only the importance of the bilayer period in designing the ALD stacking sequence in the ALD-IZO but also provide the possibility to form various multi-layered materials with different electrical properties.