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Electrostatic Discharge Performance of GaN-Based Light Emitting Diodes with Naturally Textured p-GaN Layers Grown on Vicinal Sapphires

The electrostatic discharge (ESD) characteristics of GaN-based light emitting diodes (LEDs) with textured p-GaN layers grown on c-axis vicinal sapphire substrates are studied and demonstrated. Based on the machine model, the device grown on a 0.35° tilt sapphire shows the highest ESD tolerance, whereas the one grown on a 0.2° tilt sapphire exhibits the poorest tolerance. This phenomenon is primarily influenced by the presence of maximum capacitance (C m ) values induced by a parasitic capacitance effect at the p-GaN/indium tin oxide interface rather than the difference in dislocation densities between LEDs.