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The measurement on magnetophonon resonance of 2d electron system in GaAs-AlxGa1-xAs heterostructure interface

The 2D magnetophonon oscillatory in GaAs-AlxGa1-xAs hetero-structure interface, grown by MBE, has been investigated by means of the second derivative of the magnetoresistance under high pulsed magnetic fields up to 40T. The fundamental magnetic field has been measured as 23.7T and the damping facter γ, 2D electron effective mass m* for our sample are 1.58 and 0.0747me, respectively.