{'fraction_non_alphanumeric': 0.029150823827629912, 'fraction_numerical': 0.015209125475285171, 'mean_word_length': 5.26984126984127, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Laser-enhanced CVD for low-temperature Si epitaxy

Low thermal-budget semiconductor processing will have a major impact on future Ultra Large Scale Integration (ULSI) and Si-based heterostructure devices because it reduces thermal- stress-generated-defects and maintains compact doping profiles and heterolayer integrity. This paper discusses low temperature Si homoepitaxy at temperatures as low as 250 degree(s)C by photo-enhanced chemical vapor deposition (PCVD) using the photolytic decomposition of Si2H6 by the 193 nm emission of an ArF excimer laser in an ultra high vacuum system. Very low defect density films, in terms of stacking faults and dislocation loops (less than 105 cm-2), and excellent crystallinity have been grown. The growth rates increase linearly with laser power.