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Thermoelectric power of graphene as surface charge doping indicator

We report on simultaneous thermoelectric power and four-probe resistance measurements of chemical vapor deposition grown graphene during a degas process, as well as in exposure to various gases. For all investigated samples, a dramatic change in thermoelectric power was observed and found to be sensitive to the gas molecule charge doping on the surface of graphene. The observed p-type behavior under ambient conditions supports an electrochemical charge transfer mechanism between the graphene and oxygen redox couple, while the n-type behavior under degassed conditions is ascribed to the electron doping caused by the surface states of the SiO2/Si substrate.