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Pseudo-progressive breakdown of ultra-thin nitrided gate oxide

The breakdown behaviour of n-MOSTs with nitrided ultra-thin gate oxide of about 1.6 nm effective oxide thickness (EOT) has been investigated. The leakage current versus time curves show a combination of spontaneous and successive breakdown, as well as multiple breakdown events on the same sample. The paper shows the phenomenon and discusses the implications for a proper selection of failure criteria for reliability assessment. Statistics of breakdown occurrence times yield more consistent data than that based on time to leakage current criterion.