{'fraction_non_alphanumeric': 0.0475482912332838, 'fraction_numerical': 0.008915304606240713, 'mean_word_length': 5.673267326732673, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
High performance tunable 1.5 μm InGaAs/InGaAsP multiple-quantum-well distributed-Bragg-reflector lasers

Tunable semiconductor lasers[1-3] are expected to play a major roll in both high-speed direct detection wavelength-division-multiplexed (WDM) systems and coherent heterodyne detection systems. Here we describe the structure and properties of multi-section tunable dynamic-single mode multiple-quantum-well (MQW) distributed-Bragg-reflector (DBR) lasers operating at 1.5 μm. These lasers display how threshold, excellent differential quantum efficiency, large tuning range, with both low chirp under high-speed direct modulation and narrow linewidth under CW operation.