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Study on Optical and Electronic Properties of Sn-Doped ZnPc

Sn doped ZnPc films were deposited on intrinsic Si and glass substrates by organic source thermal co-evaporation technique with different deposition rates. Optical properties and electronic structure were characterized by UV-Vis spectroscopy and X-ray photoelectron spectroscopy (XPS) respectively. The UV-Vis results showed that phase transition of ZnPc from α-phase to β-phase occurred when Sn:ZnPc deposition rate is 0.3:0.7 or higher. XPS results indicated that the outer s electron of Sn atom is transferred to the ZnPc. Broadening of the C 1s spectra is observed with the increasing of Sn deposition rate. This broadening corresponds to the change of molecular environment surrounding carbon atoms in the Sn-doped ZnPc films.