{'fraction_non_alphanumeric': 0.03147482014388489, 'fraction_numerical': 0.002697841726618705, 'mean_word_length': 6.322368421052632, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Free exciton luminescence from a diamond p–i–n diode grown on a substrate produced by heteroepitaxy

We fabricated diamond p–i–n diodes with homoepitaxially grown films on a heteroepitaxial diamond (001) substrate produced with diamond films grown on iridium (Ir). We applied our state‐of‐the‐art techniques on single crystal diamond‐based electronic devices. The current–voltage characteristics of the p–i–n diodes showed good rectification properties. Under forward current operation, the diode showed both free exciton and defect‐related luminescence. When the forward current increased, integrated intensity of defect‐related luminescence increased sub‐linearly, while that of free exciton luminescence increased super‐linearly. This remarkable trend is the same as that observed in a p–i–n diode fabricated with homoepitaxially grown films on the conventional high‐pressure and high‐temperature synthesized diamond single‐crystal substrates. The results obtained in this paper indicate a sufficient potential of the heteroepitaxial diamond substrates grown on Ir for future diamond‐based electronic devices.