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Simulation on Advanced Shallow Junction Technology with Atomistic Method

New technologies such as cluster or molecular ion implantation and flash lamp annealing (FLA) seem to be applied as advanced shallow junction technologies. In this paper, the molecular dynamics (MD) model based simulation on B10H14 and B18H22 implantation is performed. The spike annealing of cluster implantation is simulated by atomistic model. The inactivation and clustering of B implanted at 0.5 keV and annealed at 900degC-1200degC are correctly simulated by atomistic model. The simulation on activation ratio of B in FLA is presented. The discussion on cluster evolution in annealing is performed