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Numerical Study of Non-Circular Pillar Effect in 3D-NAND Flash Memory Cells

Two-dimensional (2D) Technology-Aided Computer Design (TCAD) simulation method is proposed for evaluation of program/erase/retention degradation of Three-dimensional (3D) NAND Flash memory induced by structure deformation. Incremental step-pulse program (PGM) and erase (ERS) electrical characteristics are calculated for various spike-like deformations of vertical channel etch hole, including magnitude, width and amount. Strong dependence of erase speed and negative charge retention on spike deformation is found.