{'fraction_non_alphanumeric': 0.0111731843575419, 'fraction_numerical': 0.002793296089385475, 'mean_word_length': 5.577981651376147, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
The Influence of the Rapid Thermal Annealing Process on Defect Distribution in GaAsN p-i-n Structures for Solar Cells

A comparative Deep Level Transient Fourier Spectroscopy experiment was conducted to study emission and capture processes in four types of GaAsN semiconductor barrier structures, grown by Atmospheric Pressure Metal Organic Vapor Phase Epitaxy on GaAs substrates. All the examined samples showed a variety of deep energy levels, which were examined in relation to structural properties. Activation energies of 14 defect states were evaluated. The electrically active defect analysis and sample comparison verified the positive effects of rapid thermal annealing on the observed defect concentration.