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Improving modulation bandwidth and optical power of GaN‐based blue LED by hollow‐runway active area

We demonstrate a higher‐bandwidth and optical power GaN‐based blue light‐emitting diode for visible‐light communication applications. By using a hollow‐runway active area and hollow‐runway current‐confined aperture structure, we obtain an electrical‐to‐optical (E‐O) 3 dB bandwidth (f−3 dB) significantly higher than that of a rectangle‐structure LED with the same epitaxial structure and area of active area. Meanwhile, its optical power can reach 48.65 mW, even higher than a rectangle‐structure LED (45.33 mW). Eight hollow‐runway LEDs connected in series are called hollow‐runway‐chip‐array LEDs (HRCA‐LEDs) and eight rectangle‐structure LEDs connected in series are called rectangle‐chip‐array LEDs (RCA‐LEDs), and they are fabricated into a new device on the same substrate. The f−3 dB and the optical power of the device are ~98.5 MHz and ~712.3 mW, respectively, at 50 mA. HRCA‐LEDs are used as communication module that can provide data transmission and lighting and RCA‐LEDs as a lighting module for enhancing the overall lighting capability of the device. Its luminous flux is 203.57 lm and efficacy is 87.00 lm/W at 50 mA.