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Analysis of Scalar Potential Formed in Semiconductor Barrier Discharge Reactor by Boundary Element Method

Surface treatment methods are a subject of increasing interest. Barrier discharge systems are one of the most widely used methods in surface treatment recently. In order to obtain a desired surface, the electric field distribution formed in the reactor is very important. In this study, the potential distribution in semiconductor barrier discharge reactors was numerically analyzed using the boundary element method. To evaluate the accuracy of the boundary element method in the SBD reactor, the same conditions were defined and the problem was solved using the finite element method and analytically. SEM images of the surfaces of the semiconductor layers, which are used as barriers and processed in different modes, were examined to examine the effect of the homogeneous plasma formed in the SBD reactor. The SEM images and the results of the numerical methods were evaluated together. The numerical results of the boundary element method were found to be in agreement with the experimental results. The results can be stated that the boundary element method can be used in reactor design.