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Composition and strain of self-assembled (In,Ga,Al)Sb/(Ga,Al)As quantum dots

Quantum dots of InSb, GaSb, and AlSb were grown on GaAs by molecular beam epitaxy and characterized by atomic force microscopy (AFM), photoluminescence, and Raman spectroscopy. AFM measurements reveal that InSb morphology can be a function of the initial GaAs surface reconstruction. Photoluminescence measurements demonstrate that strain and confinement effects result in a type-II band alignment for InSb quantum dots, with electrons in the GaAs and holes in the InSb. Raman spectra reveal phonon modes from quantum dots of GaSb, AlSb, and InSb, and indicate the segregation of Ga into AlSb.