{'fraction_non_alphanumeric': 0.026217228464419477, 'fraction_numerical': 0.0, 'mean_word_length': 4.811594202898551, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Low-Energy Electron Beam Direct Writing Equipment

We proposed an electron beam direct writing (EBDW) system capable of high throughput and maskless operation based on a novel concept of using both low-energy electron beam (EB) and character projection (CP) system. We fabricated an EB optical column of low-energy EBDW equipment and obtained a resist pattern. We also investigated the beam blur and line width roughness (LWR) of lines and spaces (L/S) formed on a resist to change various EB current densities and convergence half angles. The obtained results show that a Coulomb interaction effect markedly affects the beam blur in our EB optical column. Thus, we reduce the number of sources caused by LWR and developed photoresists to obtain small LWR L/S patterns for achieving a high throughput.