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Simultaneous Formation of a Metallic Mn Layer and a MnOx/MnSixOy Barrier Layer by Chemical Vapor Deposition at 250 °C

A metallic Mn layer was successfully formed on tetraethylorthosilicate (TEOS)–SiO2 substrate at the deposition temperature of 250 °C by chemical vapor deposition (CVD) using a newly developed Mn precursor, bis[1-(tert-butylamide)-2-dimethylaminoethane-N,N ']manganese. A thin and uniform Mn oxide layer was simultaneously formed at a CVD-Mn/TEOS–SiO2 interface, and was partially embedded in the TEOS–SiO2. This Mn oxide layer was composed of a bilayer of MnOx and MnSixOy. After annealing at 400 °C in vacuum for 10 h, the interface Mn oxide layer showed a good barrier property and thermal stability.