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Temperature Dependent Junction Magnetoresistance behavior of LSMO/Zn(Fe,Al)O heterojunction for Spintronics

We have fabricated a p‐n junction, consisting of p‐type manganite (LSMO) and n‐type ZnO doped with 5% Fe and 1% Al grown on a sapphire substrate using Pulsed Laser Deposition technique. This heterojunction exhibits diode like behavior in the temperature range of 77‐300 K. The I–V measurements with and without external magnetic field of 0.7 T show reasonably high junction magneto resistance at different temperatures indicating potential spintronics application.