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Performance analysis of nonvolatile gate-all-around charge-trapping TAHOS memory cells

In this work we present an investigation on the program, erase and retention properties of TaN/Al2O3/HfO2/SiO2/Si (TAHOS) nonvolatile (NV) memory cells fabricated on an advanced gate-all-around (GAA) architecture. The influence of several device parameters on the above characteristics is quantitatively assessed by numerical simulation, using an in-house developed simulation code suitable for both planar and cylindrical geometries.