{'fraction_non_alphanumeric': 0.03345070422535211, 'fraction_numerical': 0.01584507042253521, 'mean_word_length': 4.865979381443299, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Electronic Raman scattering from Al, Ga, In, and Tl atoms

An experimental and theoretical study is made of Stokes and anti‐Stokes Raman scattering from Al, Ga, In, and Tl atoms. Relative phases of 2P01/2,3/2→2D3/2 dipole matrix elements are obtained from the polarization properties of the scattered radiation. For Ga these phases are different from those obtained for Al, In, and Tl, and they are in contrast to what is expected on the basis of single configuration approximations. The experimentally determined phases are used to calculate the Raman cross sections.