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Electrical properties of Ag-silicon Schottky diode with orange-dye as interface layer deposited at various gravity accelerations

In this study, it is presented that the quality of organic semiconductor thin film as interface layer can be optimized for efficient Schottky diode by using proper gravitational acceleration during centrifugal thin film deposition process. For this purpose, thin interfacial layer of orange dye (OD) was deposited at different gravity acceleration between Ag and n-Si substrates as Schottky diode by centrifugal deposition method. Different Schottky parameters such as series resistance, ideality factor and interface barrier height of Ag/OD/Si diodes were evaluated and compared as a function of gravity acceleration. It was observed that Schottky parameters were improved at higher gravity acceleration, but the most improved Schottky parameters were observed for Ag/OD/Si diode fabricated at 277g during centrifugal deposition process. Such improvement in barrier height and ideality factor at 277g can be attributed to the improved quality of OD thin film for Ag/Si Schottky diode.