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Realization of Large Area Co20Fe60B20-Based Perpendicular Magnetic Tunnel Junction for CMOS Compatible Device Application

This study reports the current induced switching of Co20Fe60B20/MgO/Co20Fe60B20 based perpendicular magnetic tunnel junction (p-MTJ) with [Co/Pt]4 stack as synthetic antiferromagnetic (SAF) layer. Electrical and spectroscopic evidence of p-MTJ reveals that the pinning of Co20Fe60B20 layer by SAF through Ta spacer layer, which enhances the switching resistance after annealing at 650 K (375 °C). A drastic improvement of six times in TMR was observed after annealing in an external magnetic field (14% for as-deposited and 83% for annealed both for zero bias). The TMR also shows gradual increase behavior with bias at room temperature, which may be attributed to the multi-domain switching with increase in current. The analogous SAF based MTJ devices were modeled using non-equilibrium Green’s function (NEGF) to validate the experimental results. The existence of stable TMR and low switching current density of the fabricated p-MTJ structures provides higher reliability and low power operation. This makes it attra...