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600°C thermal oxidation of amorphous LPCVD silicon for thin film transistor application

Silicon layers deposited by low pressure chemical vapor deposition at a temperature between 520 degree(s)C and 620 degree(s)C have been oxidized at 600 degree(s)C to evaluate the feasibility of a pad oxide for a multilayered insulator used as the gate of a thin film transistor. It is concluded that such a pad oxide can be used if the silicon is deposited in the amorphous phase.