{'fraction_non_alphanumeric': 0.02268760907504363, 'fraction_numerical': 0.0017452006980802793, 'mean_word_length': 6.756756756756757, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
P‐1: Peripherally Crystallized Polycrystalline Silicon (PCP) for Thin‐Film Transistors

Metal‐induced peripheral crystallization is proposed and demonstrated as an alternative scheme based on the general technique of metal‐induced lateral crystallization of amorphous silicon. Compared to the scheme of unilateral crystallization, peripheral crystallization requires a shorter process time and reduced masking step. Compared to the scheme of self‐aligned bilateral crystallization, it largely retains the better material and device properties of unilateral crystallization.