{'fraction_non_alphanumeric': 0.015151515151515152, 'fraction_numerical': 0.0, 'mean_word_length': 5.2936507936507935, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
High and tunable spin current induced by magnetic–electric fields in a single-mode spintronic device

We proposed that a viable form of spin current transistor is one to be made from a single-mode device which passes electrons through a series of magnetic–electric barriers built into the device. The barriers assume a wavy spatial profile across the conduction path due to the inevitable broadening of the magnetic fields. Field broadening results in a linearly increasing vector potential across the conduction channel, which increases spin polarization. We have identified that the important factors for generating high spin polarization and conductance modulation are the low source–drain bias, the broadened magnetic fields, and the high number of FM gates within a fixed channel length.