{'fraction_non_alphanumeric': 0.02009273570324575, 'fraction_numerical': 0.010819165378670788, 'mean_word_length': 5.29126213592233, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
THz pulse detection by photoconductive plasmonic high electron mobility transistor with enhanced sensitivity

We report on the THz pulse detection by a photoconductive InGaAs High Electron Mobility Transistor with enhanced sensitivity due to induced nonlinearities mixing the rectified optical pulse with the THz pulse. The experimental setup (see Figure 1) is similar to that used in the THz Time Domain Spectroscopy (TDS) but instead of a photoconductive antenna typically fabricated on low temperature grown (LT) GaAs, we use a submicron HEMT (with a 130 nm gate) connected to a 50 GHz transmission line (see Figure 2) to improve the bandwidth.