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Silicon Nitride for High‐Temperature Applications

In this paper, a summary of the development of high-temperature silicon nitride (T>1200°C) is provided. The high-temperature capacity of various advanced commercial silicon nitrides and materials under development was analyzed in comparison with a silicon nitride without sintering additives produced by hot isostatic pressing. Based on this model Si 3 N 4 composed of only crystalline Si 3 N 4 grains and amorphous silica in the grain boundaries the influence of various sintering additive systems will be evaluated with focus on the high-temperature potential of the resulting materials. The specific design of the amorphous grain-boundary films is the key factor determining the properties at elevated temperatures. Advanced Si 3 N 4 with Lu 2 O 3 or Sc 2 O 3 as sintering additive are characterized by a superior elevated temperature resistance caused by effective crystallization of the grain-boundary phase. Nearly clean amorphous films between the Si 3 N 4 grains comparable to that of Si 3 N 4 without sintering additives were found to be the reason of this behavior. Benefit in the long-term stability of Si 3 N 4 at elevated temperatures was observed in composites with SiC and M o Si 2 caused by a modified oxidation mechanism. The insufficient corrosion stability in hot gas environments at elevated temperatures was found to be the main problem of Si 3 N 4 for application in advanced gas turbines. Progress has been achieved in the development of potential material systems for environmental barrier coatings (EBC) for Si 3 N 4 ; however, the long-term stability of the whole system EBC-base Si 3 N 4 has to be subject of comprehensive future studies. Besides the superior high-temperature properties, the whole application process from cost-effective industrial production, reliability and failure probability, industrial handling up to specific conditions during the application have to be focused in order to bring advanced Si 3 N 4 currently available to industrial application.