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Substitutional Impurity Segregation to the Σ 5 (310)/[001] Stgb in Cu Doped Aluminum and Ag Doped Copper

The phenomenon of segregation is of long standing scientific interest and has been studied extensively, both theoretically as well as experimentally. For our investigations we have chosen the Σ5 symmetric tilt grain boundaries (STGB) in two face-centered cubic (FCC) metals, aluminum and copper. Both metals were doped with only 1 at% of the impurity species (Cu and Ag). One of our major goals in this study was to investigate the size effect on segregation of an impurity to distinct sites at the grain boundary. Therefore we have selected the Ag as an impurity in Cu and Cu as an impurity in Al. The latter one is of special interest for applications like interconnects in microcircuits, where one of the major controlling factors of electromigration is expected to be the diffusion or segregation of Cu atoms at Al grain boundaries. The model grain boundaries have been fabricated with ultra-high vacuum diffusion bonding of single crystals which bonds the bicrystals under highly controlled environmental conditions.