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350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN

We demonstrated a UV-laser diode grown on low-dislocation-density AlGaN. The combination of a low-temperature-deposited AlN interlayer technology and heteroepitaxial lateral overgrowth yielded crack-free and partially low-dislocation-density AlGaN on a grooved GaN substrate. A ridge waveguide was fabricated in the low-dislocation-density region. The lasing wavelength under pulsed current injection at room temperature was 350.9 nm, which is the shortest wavelength ever reported.