{'fraction_non_alphanumeric': 0.04779411764705882, 'fraction_numerical': 0.02389705882352941, 'mean_word_length': 4.618556701030927, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Single Crystal Fe Films Prepared by a Low Kinetic Energy Sputtering Method

The ga-flow-sputtring (GFS) method, in which atoms with very low kinetic energies (≪0.1 eV) are deposited, was studied as a means of growing single-crystal ¿-Fe films on MgO(001). These films were characterized by reflection high-energy electron diffraction, X-ray diffraction and Kerr-effect magnetometry. The results suggested that single-crystal Fe films grow at a substrate temperature of about 400°C and under a pressure of 1 Torr, at a growth rate of 1100 Å/min.