{'fraction_non_alphanumeric': 0.03697996918335902, 'fraction_numerical': 0.0, 'mean_word_length': 4.6521739130434785, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Turn-On Principles of the MOS-GTO

MOS-GTO's (GTO thyristors which are turned off by the action of a MOS-gate) represent a new generation of controllable thyristors offering considerable advantages in turn-off behavior as compared to conventional GTO's. However, MOS-GTO's generally require one control electrode for turn-on and another control electrode for turn-off, which might be regarded as a disadvantage. It is shown that in MOS-GTO's with a p-channel cathode structure it is possible to turn the thyristor on and off by controlling just one MOS gate electrode. As a triggering current for turn-on, the MOS capacitor charging current is used.