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Preparation and Electrical Properties of Rhombohedral Pb(ZrxTi1-x)O3 Thin Films by RF Magnetron Sputtering Method

Rhombohedral lead zirconate titanate (PZT) thin films with a thickness of 0.3–1.2 µm were successfully grown on (111)Pb(La,Ti)O3/Pt/Ti/SiO2/Si and (111)Ir/SiO2/Si substrates by an RF magnetron sputtering method using a multi-target consisting of calcinated PbO and metal titanium pellets on a zirconium metal plate. The composition of the films could be controlled by adjusting the area ratio of PbO/Zr/Ti. The crystal structures of the films were sensitive to the area of PbO and the substrate temperature. The pyroelectric current, relative dielectric constant, Curie temperature, remanent polarization (Pr) and coercive field dependence on the Zr content of the films are described. The pyroelectric coefficient of the as-prepared PZT films showed a peak from 94°C [for Pb(Zr0.91Ti0.09)O3] to 36°C [for Pb(Zr0.97Ti0.03)O3], which corresponded to the phase transition from the low-temperature to high-temperature rhombohedral ferroelectric phase. The fatigue characteristic was also measured using a double bipolar pulse. The PZT films preserved an initial switching charge value over a switching cycle of 1012.