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Etude du Transport dans les Transistors MOSFETs Contraints: Modélisation Multi-échelle. (Study of Transport Properties in Strained transistors MOSFETs: Multi-scale Approach)

The dimension shrinking of the MOSFETs transistors, integrated circuit ground devices, do not allow their performance enhancement further more. Technology boosters have been inserted in MOSFETs transistors process fabrication to fix it. Intentional introduction of strain is one of these technological solutions. Indeed, the strain orientation as a function of the channel direction strongly influences the transport properties of the MOSFETs transitors. The semi-empirical calculation methods, such as EPM and */k.p/* in the envelop function approximation, have been developed in order to study the bandstructure perturbation associated to the combined action of strain and confinement. The influence of these latter perturbations has subsequently been analyzed using the advanced transport simulations "fullband" Monte Carlo and Kubo-Greenwood. The theoretical results obtained have been compared to the experimental data obtained from Wafer Bending technique and measured throughout this thesis. It clearly underlines the crucial importance of the complex coupling between strain and confinement on the transport properties in current MOSFETs devices. Finally, at each modelisation step, validity domain of the basic transport solvers used in industrial organization, such as Drift-Diffusion and Hydrodynamic models, has been pointed out.