{'fraction_non_alphanumeric': 0.018947368421052633, 'fraction_numerical': 0.0, 'mean_word_length': 4.734939759036145, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
The impact of postbreakdown gate leakage on MOSFET RF performances

When the gate-oxide of a MOSFET breaks down, a leakage path is created between channel and gate. In this work, we demonstrate that a simple leakage current increase model can predict the impact of gate-oxide breakdown on MOSFET performance from dc to microwave frequency. We show that severe reduction in RF performance due to input/output mismatch and a gain reduction can result from gate-oxide breakdown.