{'fraction_non_alphanumeric': 0.04900459418070444, 'fraction_numerical': 0.0444104134762634, 'mean_word_length': 4.6976744186046515, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Structural role of double layer amphoteric oxides forms on electrical conductivity: PbO/zinc oxide semiconductor

We have investigated the electrical properties of PbO/Zinc Oxide double-layer semiconductor (DLS) diodes such as series resistance ( Rs ), ideality factor ( n ), and barrier height ( φb ). The samples were manufactured by using an evaporation technique at room temperature. To obtain their main electrical parameters, current-voltage (I–V) measurements have been performed in the dark and at room temperature. In the study, we examined two diodes to evaluate the electrical characteristics of PbO/Zinc Oxide double-layer semiconductor (DLS) diodes using the thermionic emission (TE) theory, Norde’s method, and Cheung’s functions. While n, ϕb, and I0 values of Diode 1 were found to be 4.02, 0.739 eV, and 1.506. 10−8 A respectively, the same values of Diode 2 were calculated as 4.14, 0.724 eV, and 2.65.10−8 A, respectively, by using the TE method. The values of n, ϕb, and Rs were also calculated using the Cheung’s method, and they were found to be 10.048, 0.549 eV, and 4.058 kΩ, respectively, for Diode 1, while these values were calculated as 8.116, 0.659 eV, and 7.799 kΩ respectively, for Diode 2. φb and Rs values are also ascertained as 0.84eV for Diode 1 and 0.80eV for Diode 2, 18.2kΩ for Diode 1 and 11.1kΩ for Diode 2 using Norde Method, respectively. The forward bias I–V characteristics were used to obtain the energy distribution of the interface state density considering the effective barrier height’s bias dependence. The change observed in the interface state density’s magnitude ranged between 1.4×1012 and 2.0×1011eV−1cm−2. The evaluated series resistance indicates the product of mobility and free carrier concentration, ideality factor is a measure of how closely the diode follows the ideal diode equation, and barrier height also depends on the concentration of carriers in PbO/Zinc Oxide double-layer semiconductors.