{'fraction_non_alphanumeric': 0.015363128491620111, 'fraction_numerical': 0.013966480446927373, 'mean_word_length': 5.181034482758621, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Reduction of Interface States Stress Generation by Oxygen Annealing of ALD Nanolaminated HfO2/Al2O3 Dielectric Stacks for Charge Trapping Devices

In this work we analyze the effects of rapid thermal annealing (RTA) in 02 on the interface state density in MIS structures containing charge trapping HfO2/ Al2O3 nanolaminated dielectric stacks obtained by atomic layer deposition. The density of interface states increases after annealing in O2, but generation of new interface states as a result of electrical stress is strongly reduced. R T A in O2 affects also the bulk properties of the stacks, by suppressing the formation of stress-induced positive charge. The correlation between these two effects is discussed.