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Molecular dynamics simulations of femtosecond laser ablation of silicon

Molecular dynamics simulations were carried out to investigate the ablation process of silicon under irradiation of 266nm femtosecond laser. Evolutions of macro-variables were studied and final Profile and movement traces of atoms were obtained in Si(100) with laser intensity of 400GW/cm2. Characteristics of ablation processes of Si(100) and Si(111) were compared. The amount of removal atoms and ablation depths were analyzed quantitatively in the two bulks with laser intensity of 400GW/cm2. Propagations of stress wave in the two bulks were also investigated.