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Mitigating Row Hammer attacks based on dummy cells in DRAM

This paper presents an alternative to prevent data corruption in DRAM memories due to Row Hammer attacks. The proposal is based on the usage of dummy cells connected to each row as attacks indicator. These special cells are characterized for having a higher sensitivity to coupling noise. The strategy was validated by simulations on a 65nm CMOS 64×64 memory array, including process variations for coupling and interconnections. Results keep congruence with a memory dedicated, state-of-art, process of 28nm. The main characteristics of this suggested solution are its low-complexity and low-hardware overhead.