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MOSFET power loss characterization: Evolving into multivariate response surface

This work describes a methodology to characterize MOSFETs losses with a comprehensive multivariate model that includes many effects simultaneously. Unlike the traditional family of curves employed for decades in data sheets and many scholarly publications, the proposed method evolves into a mathematical N-Dimensional response surface by employing statistical Design of Experiments (DoE). Design efficiency and accuracy are some of the characteristics of the method, which can be applied for both experimentation and surrogate modeling. Two examples of power loss characterization are presented to provide efficient experimental and surrogate models with statistical validity.