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Single oriented carbon nanotubes growth on array of processed microelectrodes

The development of field-effect devices induced a demand for very fine, high-aspect-ratio tips, suitable for scanning tunneling and force microscopy and field-effect emitter arrays. Silicon pyramidal structures field emitter array (Si-FEA) was fabricated using pure thermal silicon dioxide as a mask for selective etch. Based on a new-technology of carbon nanotubes selective growth on the tip of silicon pyramidal structures the emission efficiency of the processed silicon tips could be increased. The paper presents first results of this technology.