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AC dielectrophoresis alignment of ZnO nanowires and subsequent use in field-effect transistors.

We report on the dielectrophoresis (DEP) characterization of single crystalline zinc oxide (ZnO) nanowires with variations of the AC electric field and frequency. The alignment yield rate of ZnO nanowires in the gap over the 200 metal electrodes increased with increasing AC electric field and also changed by the applying frequency. Moreover, we demonstrated that the DEP prepared multi-ZnO nanowires field-effect transistors (FETs) exhibited excellent performance with a transconductance of approximately 3 muS and a high drain current of approximately 2.7 x 10(-6) A (V(DS) = 5 V, V(G) = 20 V).