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Ultra-fast calorimetry study of Ge2Sb2Te5 crystallization between dielectric layers

Phase changes in chalcogenides such as Ge2Sb2Te5 can be exploited in non-volatile random-access memory, with fast crystallization crucial for device operation. Ultra-fast differential scanning calorimetry, heating at rates up to 40 000 K s−1, has been used to study the crystallization of amorphous Ge2Sb2Te5 with and without sandwich layers of ZnS-SiO2. At heating rates up to 1000 K s−1, the sandwich layers retard crystallization, an effect attributed to crystallization-induced stress. At greater heating rates (≥5000 K s−1), and consequently higher crystallization temperatures, the stress is relaxed, and sandwich layers catalyze crystallization. Implications for memory-device performance are discussed.