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High-temperature and high-speed oxidation of 4H-SiC by atmospheric pressure thermal plasma jet

The application of atmospheric pressure thermal plasma jet (TPJ) annealing to the high-temperature and high-speed thermal oxidation of Si-face of 4H-SiC wafer is reported. A high SiO2 film growth rate of 288 nm min−1 was obtained at an oxidation temperature of 1640 °C without intentional dry O2 gas feeding. Ambient analysis suggested that ozone generated from oxygen in the ambient air by the plasma irradiation was supplied to the SiC surface. It is implied that a mono-oxygen decomposed from ozone was diffused into the oxide growth interface. As a result, high-speed oxidation occurred by combination of high-temperature TPJ annealing and ozone feeding.