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InGaP-GaAs HBT Statistical Modeling for RF Power Amplifier Designs

A simple statistical modeling methodology is presented for InGaP-GaAs HBTs devices and RF power amplifier circuits. The modeling approach utilizes in-line electrical parameter control data and DOE method to establish relationships between important material and model parameters. The key considerations of parameter selection are given and essential connections from device physics to model parameters are described. This statistical model allows designs that are robust to process variations and provide circuit designers with a method to de-bug design issues that can result from device variations. The authors show the background that supports this approach and demonstrate its application at both a device and circuit level