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Monolithically integrated near-infrared and mid-infrared detector array

Quantum-well infrared photodetector (QWIP) technology has shown remarkable success by realizing large-format focal plane arrays in both broadband and in multiband. The spectral response of these detectors based on the III-V material system is tailorable within the mid- and long-wavelength infrared bands (~3-50 μm). Recently, we have extended this wavelength limit by monolithically integrating a near-infrared (1-1.5 μm) p-i-n photodiode with a mid-infrared (3-5μm) QWIP. This multiband detector involves both intersubband and interband transitions in III-V semiconductor layer structures. Each detector stack absorbs photons within the specified wavelength band while allowing the transmission of photons in other spectral bands, thus efficiently permitting multiband detection. Monolithically grown material characterization data and individual detector test results ensure the high quality of material suitable for near-infrared/QWIP dual-band focal plane array.