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Field-Effect Mobility of Molecularly Doped Poly(3-hexylthiophene)

Thin film field-effect transistors (TFTs) utilizing poly(3-hexylthiophene) (PAT6) doped with the electron transporting molecule N,N'-bis(2,5-di- tert -butylphenyl)-3,4,9,10-perylene dicarboximide (BPPC), have been fabricated and characterized. Bipolar transport characteristics have been found in these TFTs, for which the mobilities of both the hole and the electron have been evaluated. Observed unique BPPC concentration dependence of the field-effect electron mobilities has been interpreted in terms of the percolation model.