{'fraction_non_alphanumeric': 0.018844221105527637, 'fraction_numerical': 0.0, 'mean_word_length': 4.947761194029851, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Impacts of back-grinding process parameters on the strength of thinned silicon wafer

In order to achieve the packages with much higher performance, more I/Os, lower profile and lighter weight, the thickness of silicon wafer has been decreased dramatically in recent years, but which degrades the strength of thinned wafer. In this paper, three-point bending test was adopted to evaluate the thinned wafer fracture strength, and the impacts of back-grinding process parameters on the wafer fracture strength were addressed. Results show the trend of an increase in wafer strength with an increase in grinding wheel rotational speed and a decrease in grinding wheel feed rate. Also, it is found that the strength decreases progressively from the center of wafer to the edge for most wafer samples.