{'fraction_non_alphanumeric': 0.04086845466155811, 'fraction_numerical': 0.024265644955300127, 'mean_word_length': 5.700854700854701, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Confirmation of the temperature-dependent photovoltaic effect on Fermi-level measurements by photoemission spectroscopy.

Soft x-ray photoemission spectroscopy measurements of Fermi-level positions within the band gap of clean, GaAs(100) surfaces demonstrate that photovoltaic charging produces a major shift in the apparent band bending at low (50-100 K) temperatures. These measurements confirm recent predictions of Hecht [M. H. Hecht, Phys. Rev. B 41, 7918 (1990)], based on restoring currents limited by carrier transport through the depletion region, highlight the e6'ects of photovoltaic charging for clean (versus metallized) semiconductor surfaces, and justify Hecht's claims for a reassessment of many previous low-temperature photoemission studies of Fermi-level movement.