{'fraction_non_alphanumeric': 0.020146520146520148, 'fraction_numerical': 0.0027472527472527475, 'mean_word_length': 4.972677595628415, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Diffusion effects in p‐type PtSi Schottky diodes under reverse bias

At low temperature, the dominant current transport process of a p‐type PtSi Schottky diode on a moderately doped Si substrate is thermionic emission over the barrier. In this paper, current has been measured as a function of temperature at a fixed reverse bias for several Schottky diodes. It is found that diffusion effects due to the limitation upon the diffusion rate through the space‐charge region can become significant under some conditions. At moderate field, these conditions are calculated to be at a temperature of 150 K or greater, depending on the doping density of the devices. I‐V‐T measurements were carried out on several Schottky devices fabricated in slightly different ways, and the diffusion effect was observable in some of these devices. A numerical routine is utilized to fit the experimental data to a combined thermionic emission‐diffusion theory in these regions. It is found that the experimental results fit this theory well. In addition, the acceptor density at which diffusion becomes the ...