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Numerical modeling of microwave switchers with subpicosecond time delay

In this article the layout and structure of the microwave switcher based on the managed electron density maximum rearrangement in multi-contacts functionally integrated active region are considered. The basis of the microwave switcher is a normally opened high electron mobility transistor structure (HEMT) with multiple Schottky gates and the corresponding number of switching ohmic contacts. In this research two-dimensional finite-difference physical and topological model of the considered microwave switchers is proposed. The distinctive features of the proposed model are combination of two different sets of variables and explicit first-order upwind discretization scheme for the normalized continuity equation. The obtained results of numerical modeling are discussed.