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Dynamics of interface traps in bonded silicon wafers

In this paper, a time-domain nonlinear model is proposed for quantum dynamics of interface traps, based on the thermionic emission model. The model is simplified for the interface traps of the directly bonded silicon wafers. This model has been linearized, resulting in an equivalent electrical circuit that has one capacitive and one resistive branch. We discuss the experimental verification of the predicted frequency response on directly bonded n-type silicon wafers. This method enables us to precisely measure the occupation time constant of the interface traps through the recombining electrons from the conduction band, by measuring the frequency response of the interface.