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Refractive Index Variation in GaInAsP/InP Quantum Confined Structures Grown by Chemical Beam Epitaxy

The absorption coefficient and refractive index variations due to quantum confined Stark effect in a GaInAsP/InP multiple quantum well grown by chemical beam epitaxy have been investigated. The refractive index variation was estimated from the variation of the optical absorption coefficient spectra for various electric fields. The optical absorption coefficient spectra was directly measured by transmission experiments. The maximum refractive index variation was estimated to be 3% at an applied reverse bias voltage of 3 V.