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Material Characterization and Optimization for Ultrahigh-Speed Metal-Semiconductor-Metal Photodetectors

Metal-semiconductor-metal photodetectors fabricated on different epitaxial layers of GaAs are investigated and optimized for applications to high-speed optical transmission systems. The devices exhibit full width at half-maximum (FWHM) times from 1.5 ps to 7 ps corresponding to carrier velocities exceeding 5×107 cm/s. In contrast to previously reported results, our results indicate that the use of low doped materials is recommended due to much better linearity and dynamic responsivity.