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Sub-nT Resolution of Single Layer Sensor Based on the AMR Effect in La2/3Sr1/3MnO3 Thin Films

Single-layer magnetoresistive sensors were designed in a Wheatstone bridge configuration using La2/3Sr1/3MnO3 ferromagnetic oxide thin film. Uniaxial anisotropy was induced by performing epitaxial deposition of the films on top of vicinal SrTiO3 substrate. X-ray scan confirms the high crystalline quality of the films and the magnetic anisotropy was checked by magneto-optical Kerr effect measurements. Thanks to the anisotropic magnetoresistive effect and the very low noise measured in the devices, sub-nT resolution was achieved above 100 Hz at 310 K.