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Measurements of ionization produced in silicon crystals by low-energy silicon atoms.

We measured the ionization and the fluctuations in ionization produced in a Si(Li) detector by silicon atoms at five particular kinetic energies ranging from about 4 to 109 keV. The method is simple and precise, yet untried until now, and provides excellent calibration points for silicon. Our results are in good agreement with the predictions of Lindhard {ital et} {ital al}. (Mat. Fys. Medd. 33, 10 (1963)).