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Silicon triangular barrier diodes by MBE using solid-phase epitaxial regrowth

Triangular barrier diodes have been fabricated in silicon using molecular beam epitaxy (MBE). The extreme profile changes necessary for these devices are realized by growing the desired structure in amorphous silicon layers, which are then crystallized in situ using solid-phase epitaxial regrowth. The resulting diode I-V characteristics compare well with those predicted, and capacitance values are nearly constant, regardless of bias.