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TCAD simulations of double gate junctionless tunnel field effect transistor with spacer

In this paper, we proposed a double gate junction-less tunnel field effect transistor (DGJL-TFET) with the spacer. The performance parameters of the device are figured as in terms of ON-state to the OFF-state current ratio(ION/ Ioff), sub-threshold swing (SS) and output transconductance(gd). By using dielectric as a spacer, we can observed that the ON-state current of the device increase and consequently making the device more versatile. However, the OFF-state current is just slightly influenced by rising dielectric constant of the spacer. In this paper, we compare the proposed device with DGJL-TFET and observe that the proposed device have the better candidate for the low power device.