{'fraction_non_alphanumeric': 0.05257393209200438, 'fraction_numerical': 0.06133625410733844, 'mean_word_length': 4.784810126582278, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
New Microwave Dielectric Ceramics BaLn2(MoO4)4 (Ln = Nd and Sm) with Low Loss

In the present work, a pure monoclinic phase of BaNd2(MoO4)4 and BaSm2(MoO4)4 was formed at 850°C and 600°C, respectively, via a solid-state reaction method. The ceramic samples were found to be well densified at 960°C. Dense and homogeneous microstructures were revealed from the scanning electron microscopy. The microwave dielectric behaviors were studied as a function of sintering temperature and characterized in the temperature range 25°C–120°C. The best properties were obtained in ceramics sintered at 960°C with a permittivity ~11.7, a Q × f value of 45 000 GHz and a temperature coefficient of frequency about −41 ppm/°C for BaNd2(MoO4)4 ceramic at 9.9 GHz, and a permittivity ~11.8, a Q × f value of 20 000 GHz, and a temperature coefficient of frequency about −34 ppm/°C for BaSm2(MoO4)4 ceramic at 9.7 GHz, respectively.