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MOCVD PBZRxti1−xo3 thin films on platinized silicon wafers and srtio3 crystals

Abstract PbZrxTi1-xO3 (PZT) thin films were grown on 6” platinized silicon substrates (Pt / Si) and SrTiO3 (STO) crystals by Metal-Organic Chemical Vapor Deposition (MOCVD) as a function of the Zr / (Zr+Ti) ratio in the gas phase. Morphology, optical properties, and crystal structure were investigated by scanning electron microscopy, atomic force microscopy, ellipsometry, and X-ray diffraction. The morphology, structure, and optical properties of the polycrystalline and epitaxial films were compared. The determination of the refractive index by ellipsometry (from 550 nm to 2000 nm) was not sensible for the films grown on (Pt / Si) but successful for the films grown on SrTiO3.