{'fraction_non_alphanumeric': 0.03482587064676617, 'fraction_numerical': 0.01824212271973466, 'mean_word_length': 5.494623655913978, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Reflectance anisotropy and Raman scattering spectroscopy studies of ZnSe grown on GaAs(001)

Using an evaporation chamber equipped with a ZnSe compound source, we have grown ZnSe on GaAs(001) and characterized the surface using low-energy electron diffraction (LEED), Raman scattering spectroscopy and reflectance anisotropy spectroscopy (RAS). High-quality layers of ZnSe were obtained and revealed by LEED to have a c(2*2) surface reconstruction and the RAS spectra were measured. The RAS spectra proved to be reproducible when a similar surface was obtained by de-capping a Se-capped ZnSe(001) sample