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Local photocurrent and resistivity measurements with micron resolution

The high resolution laser stepping apparatus developed at Colorado State University has been employed to investigate the response of CdTe-based solar cells to incident laser illumination with very high resolution. The local cell characteristics can be determined by measuring the photocurrent as a function of bias with various intensities and spot sizes. In addition, the high spatial resolution of the instrument makes it possible to examine local variations in resistivity, including regions containing localized defects and single grain boundaries. PSpice modeling of an equivalent circuit has been employed to fit individual apparent quantum efficiency (AQE) versus bias curves. It was determined that, while resistive effects are the dominant mechanism for local variations in photocurrent, high injection effects cannot be ignored when fitting the data.