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Electrical and Physical Properties of Lead Aluminum Niobate-Lead Titanate Ferroelectric Thin Films Prepared by Chemical Solution Deposition Process

A new ferroelectric 0.2Pb1.1(Al1/2Nb1/2)O3-0.8Pb1.1TiO3 thin film with 430 nm thickness was fabricated successfully on Pt(111)/Ti/SiO2/Si substrate using a chemical solution deposition process. This thin film was a perovskite single phase with a <100 > dominating orientation. The dielectric constant and the dielectric loss factor are 600 and 0.015, respectively. A broad peak with a value of about 730 at the Curie temperature of 340°C appeared in the plot of the temperature dependence of the dielectric constant. The remanent polarization (Pr) and the coercive field (Ec) are 12 µm/cm2 and 38 kV/cm, respectively. The addition of Pb(Al1/2Nb1/2)O3 is more effective than individual aluminum or niobium doping in improving the dielectric and ferroelectric properties.