{'fraction_non_alphanumeric': 0.029616724738675958, 'fraction_numerical': 0.027874564459930314, 'mean_word_length': 4.2272727272727275, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
GaAs Transceiver for X-band

This paper presents the design and the fabrication of an 8–12 GHz fully-integrated monolithic microwave integrated circuit (MMIC) transceiver, receiver, transmitter and VCO. The 0.5-μm GaAs pHEMT process was used to realize a wide frequency band with high gain and high efficiency within a compact size. The noise figure of the LNA is less than 4 dB. The VCO phase noise is less than -115 dBc at 12.88GHz and 1 MHz offset. The power gain in the transmitter is more than 16 dB. The experimental results are in good agreement with simulation data.