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Impact of Off-State Stress and Negative Bias Temperature Instability on Degradation of Nanoscale pMOSFET

This letter investigates the impact of dynamic stress on the degradation of a nanoscale p-channel metal-oxide-semiconductor field-effect transistor (pMOSFET). Experimental results indicate that the off-state stress generated donorlike interface traps <i>N</i><sub>it</sub> and electron oxide traps, localized near the drain. The on-state stress produced the negative bias temperature instability which generated <i>N</i><sub>it</sub>'s and positive oxide charges <i>Q</i><sub>ox</sub> distributed uniformly in the channel. Although the electrons trapped by the off-state stress decreased the threshold voltage |<i>V</i><sub>th</sub>|, they were detrapped readily by the subsequent on-state stress. A dynamic stress caused the nanoscale pMOSFET to build up <i>N</i><sub>it</sub> and positive <i>Q</i><sub>ox</sub>, which increased the |<i>V</i><sub>th</sub>| significantly. These new observations indicate that the combined dynamic process can significantly influence the reliability of scaled CMOS inverter circuits.