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Temperature dependence of the performance of charge-sensitive infrared phototransistors

The performance of charge-sensitive infrared phototransistors (λ∼14.7 μm) is studied at temperatures of up to 30 K. The devices, with a 16×4 μm2 photoactive area, are fabricated in GaAs/AlGaAs double-quantum-well structure. An excellent specific detectivity D∗=9.6×1014 cm Hz1/2/W is derived in a T range of up to T=23 K. Experimental results are theoretically studied based on WKB approximation, in which photogenerated holes in the floating gate (FG) are recombined with thermal emission or thermally assisted tunneling from the outside of FG through the barriers. The model well reproduces the experimental results, including the vanishing of photosignal at 30 K under 280 fW incident radiation. The model is used to predict a temperature-dependent specific detectivity D∗ in ideal devices free from 1/f noise.