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Electron-beam-induced formation of Zn nanocrystal islands in a SiO2 layer

Electron-beam-induced Zn nanocrystal islands were formed in a dielectric SiO2 layer. When a ZnO thin film on a p-type Si with amorphous SiOx interface layer is subjected to a 900°C annealing followed by electron irradiation in a transmission electron microscope environment, an amorphous Zn2xSi1−xO2 layer is formed. Upon irradiation with a 300keV electrons, metallic and single crystal nanoislands of Zn with ∼7–10nm diameter were formed and embedded within the SiO2 interface layer. Possible mechanisms for the formation of Zn nanocrystals are presented.