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Temperature characteristic of ultraviolet photoconductive detector based on CeF3 thin film

We report on temperature characteristic of ultraviolet photoconductive detectors based on CeF3 thin films. These thin films are fabricated by pulsed laser deposition (PLD). We confirmed the increase of fluorine defect ratio of CeF3 thin film fabricated by higher laser power from X-ray diffraction. The current value of detector increases as the temperature rises due to thermal exciton. Additionally, current change ratio of detector increase as the fluorine defect rate increases.