{'fraction_non_alphanumeric': 0.027820710973724884, 'fraction_numerical': 0.0, 'mean_word_length': 5.607142857142857, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Terahertz electromagnetic response and its electric field manipulation of bulked silicene

We theoretically investigate the infrared optical properties of a three-terminal silicene-based device under the irradiation of a circularly polarized terahertz (THz) electromagnetic field, utilizing the intersubband transition theorem at low temperatures. It has been demonstrated that the electronic structure of bulked silicene can be tuned to the topological insulated (TI) and band insulated (BI) state, respectively, via the back-gate voltage induced staggered sublattice potential. Furthermore, with the enhancement of the staggered sublattice potential, the refractive index, extinction coefficient and optical conductivity from the TI state spin-up and -down subbands are observed to be red- and blue-shifted, respectively, while those from the BI state spin-up and -down subbands are proved to be continually blue-shifted. The collective excitations and individual electron–hole pair excitations induced a TI and BI state electron energy loss spectrum (EELS) with a similar red- and/or blue-shift behaviour as the refractive index, extinction coefficient and optical conductivity. The obtained results may be useful in the design of the spintronic and optoelectronic devices based on silicene.