{'fraction_non_alphanumeric': 0.04897959183673469, 'fraction_numerical': 0.044897959183673466, 'mean_word_length': 5.4, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Crystalline-Structural Evaluations of Cubic AlN Thin Films Heteroepitaxially Grown on Sapphire (0001) by Pulsed Laser Deposition

Cubic β-AlN thin films with different thicknesses were grown on sapphire (0001) in nitrogen atmosphere by pulsed laser deposition with sintered AlN targets, and their film structures were evaluated by transmission electron microscopy (TEM) and X-ray diffraction (XRD). It was found that β-AlN layers with a lattice constant of 7.89 Å are epitaxially grown on sapphire (0001) with a relationship of βAlN(111)[111̄]∥Al2O3(0001)[11̄00] at film thicknesses of less than 20 nm, and at larger thicknesses, polycrystalline β-AlN grains are grown on the epitaxial β-AlN layers in the Stranski–Krastanov (SK) mode.