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Photovoltaic Properties of Cuprous Chalcogenide-Silicon Junctions

Cu2Te thin films were deposited on glass and n-type Si substrates by vacuum evaporation, and electrical and photovoltaic properties were investigated. Cu2Te thin films show p-type and low resistive conduction, and have carrier density of 1021 cm-3 and Hall mobility of 3–10 cm2/V·sec. Cu2Te–Si junctions have low photovoltaic properties, therefore Cu2Se film was deposited on Cu2Te layer making a structure of Cu2Se–Cu2Te–Si junctions. The maximum solar conversion efficiency of this structure was 9.2% under the sunlight of 83 mW/cm2.