{'fraction_non_alphanumeric': 0.03070175438596491, 'fraction_numerical': 0.01206140350877193, 'mean_word_length': 4.8152866242038215, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
High-performance position-sensitive detector based on the lateral photovoltaic effect in MoSe2/p-Si junctions.

Optoelectronic position-sensitive detectors (PSDs) based on the lateral photovoltaic effect (LPE) have been a focus of research due to their ability to detect very small displacements. In this paper, we investigate the LPE properties of MoSe2/p-Si junctions prepared using pulsed laser deposition. The LPE shows a good linear dependence with the position of the laser spot. A large positional sensitivity and a fast optical relaxation time of 563  mV mm-1 and 2 μs, respectively, were observed in the MoSe2 (10 nm)/p-Si junction. The influence of the laser power and the wavelength on the LPE suggests that the observed response originates from the photoelectric effect. The large positional sensitivity and fast relaxation time of the LPE make the MoSe2/p-Si junction a promising candidate for PSDs.