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Tb0.3Dy0.7Fe1.9/PbZr0.52Ti0.48O3 Micro-Bridge on SiNx Thin Film for Low Frequency Magnetic Sensing Applications

A micro-fabricated bridge sensor for determining minute magnetic field variation is proposed. A micro-bridge with 100×400 µm2 dimensions (width × length) comprises a multi-layered structure of Tb0.3Dy0.7Fe1.9/SiO2/Pt/PbZr0.52Ti0.48O3/Pt/Ta on a SiNx supporting layer. We observed the limit of detection under small DC magnetic field as 1×10-11 T which was converted electrically to 77 µV with a 5 µV noise floor via elastic coupling between magnetostrictive and piezoelectric thin film. The magnetoelectric (ME) voltage was linearly proportional to small magnetic field variance, and the experimental ME coefficient was measured as 9.9 V/(cm·Oe).