{'fraction_non_alphanumeric': 0.020766773162939296, 'fraction_numerical': 0.0, 'mean_word_length': 5.27, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Improvement of Annealing Properties of SiC/Si Structure

Properties of the SiC film/Si substrate structure annealed in a hydrogen atmosphere are investigated by scanning electron microscopy observation, X-ray diffraction measurement and Auger electron spectroscopy analysis. Two types of defects, the line and point defects which are formed in vacuum annealing, are also observed in the SiC/Si structure annealed in hydrogen-atmosphere, but the density of the point defects is little. The hydrogen atmosphere annealing results in high crystallinity of the SiC film, and low compositional change at the surface of the SiC film.