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Two-dimensional analysis of the gate–source distance scaling effects in 4H-SiC MESFETs

Two-dimensional dc and small-signal ac analyses of the gate–source scaling effects in SiC-based high-power field-effect transistors have been performed in this paper. The simulation results show that a downscaling of the gate–source distance can improve device performance, enhancing drain current, transconductance and maximum oscillation frequency. This influence is associated with the dynamic characteristic of electrons in SiC MESFETs, which leads to a linear velocity regime in the source access region, even for high drain voltages. The variations of gate-to-source capacitance, gate-to-drain capacitance, cut-off frequency and maximum oscillation frequency with respect to the change in gate–source length have also been studied in detail. The obtained results can be used for a design guideline for the layout of 4H-SiC MESFETs.