{'fraction_non_alphanumeric': 0.011299435028248588, 'fraction_numerical': 0.0, 'mean_word_length': 5.467153284671533, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Physical and Chemical Contributions of Interfacial Impurities to Film Adhesion

Effects on adhesion strength of residual Cl and F impurities at the interface between a Cu film deposited by chemical vapor deposition and a TiN substrate were studied through experimental and computational methods. The adhesion strength of the Cu film on HCl treated TiN was enhanced compared with that on untreated TiN, whereas the adhesion strength on HF treated TiN was reduced. X-ray photoelectron spectroscopic (XPS) analysis of the near-interface region revealed that the adhesion differences in the presence or absence of the residual impurities were not due to the contribution of chemical interactions, but rather to physical contributions. Computational estimations suggest that incorporation of Cl in the TiN substrate improves the physical bonding strength by increasing the dispersion force.