{'fraction_non_alphanumeric': 0.014492753623188406, 'fraction_numerical': 0.0, 'mean_word_length': 5.827160493827161, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Electronegativities and Transition Densities in the Theory of Metal-Semiconductor Interfaces

A heuristic derivation of the relationship between electronegativity differences, band bending potentials and Schottky barriers is given as well as a formula relating shifts in Schottky barriers (for fixed semiconductor and for various metals) with ESCA chemical shifts or semiconductor sites at the interface. These are further related to transition charge densities and local density of states (for a pseudo system including both initial and final states).