{'fraction_non_alphanumeric': 0.03017241379310345, 'fraction_numerical': 0.002586206896551724, 'mean_word_length': 6.25625, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Organothiol‐Based Hybrid‐Layer Strategy for High‐Performance Copper Adhesion and Stress‐Migration via Simultaneous Oxide Reduction

The presence of defective native copper‐oxide (CuxO) remains a challenge for device technologies owing to its detrimental effects on the adhesion, moisture sensitivity and stress‐migration. Here we demonstrate a rapid, single‐step, and organic‐solvent‐free sol‐gel deposition process that is capable of simultaneously reducing the weak native Cu‐oxide while forming a densely connected Cu/hybrid interface. A marked 9‐fold improvement in adhesion is reported, along with a substantial decrease in the Cu stress‐migration rate during in‐situ isothermal stress‐relaxation experiments. The enhanced Cu/hybrid interface adhesion and the improved Cu stress‐migration performance were attributed to the partial reduction of the ~2 nm native Cu2O layer as demonstrated via atomic‐resolution transmission electron microscopy. The hybrid‐layer strategy we developed is expected to be effective in not only being a strong candidate for adhesion improvement to Cu, but in promoting Cu stress‐ and the related electro‐migration performance.