{'fraction_non_alphanumeric': 0.022170361726954493, 'fraction_numerical': 0.0, 'mean_word_length': 5.0, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Source-Pull and Load-Pull Characterization of Graphene FET

This paper presents the characterization of a GFET transistor using a source-pull/load-pull test set. The characterization shows that despite the good fT and fMAX, it is hard to achieve power gain using the GFET device within a circuit configuration. This is due to the very high impedance at the gate making impedance matching at the input extremely difficult. S-parameter characterization is performed and the associated small signal model is developed in order to further analyse and extrapolate the source-pull and load-pull measurement results. A good agreement is observed between small signal model simulation results and source-pull/load-pull measurements. Finally, the model is used to evaluate the optimum power gain of the transistor in a circuit configuration under matched conditions.