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Traps effect on the I-V-T characteristics of Au/n-InP Schottky barrier diode

In the present study, the I-V characteristic of Au/n-InP Schottky barrier diode (SBD) was simulated in the temperature range 200–300 K using the numerical simulator Atlas-Silvaco. By taking in to account the appropriate physical models and the presence of deep traps in the quasi-neutral region, the simulation was performed in goal to understand the effect of traps on the series resistance and the I-V curves intersection point. The obtained results clarified that the series resistance is related to the traps depth in the quasi-neutral region. In addition, the results prove that the I-V curves intersection point shift toward higher bias with increasing the series resistance value. Also the I-V curves crossing point found to be temperature dependent when the series resistance is not zero.