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Short Range Order and Atomic Charge Distribution in Amorphous Silicon

Our studies on the determination of the charge accumulation in finite ap~riodic clusters of amorphous pure and hydrogenated silicon by means of a semiempirical molecular orbital method is summarized. An empirical formula depending on angle distortions is presented for calculating their net atomic charges. Applying the formula the charge fluctuations is calculated which are comparable to the experimental data.