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Experimental study on carrier transport properties in extremely-thin body Ge-on-insulator (GOI) p-MOSFETs with GOI thickness down to 2 nm

In this paper, we have successfully demonstrated high quality Extremely-thin body (ETB) Ge-on-insulator (GOI) p-MOSFETs with thickness ranging from 25 nm to 2 nm. Furthermore, the hole mobility and the GOI thickness dependence over a wide range of GOI thickness down to 2 nm are systematically analyzed and understood from the viewpoint of the scattering mechanisms, for the first time.