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Resonant tunneling in GaAs/AlAs heterostructures grown by metalorganic chemical vapor deposition

We report the first observations of resonant tunneling in electronic transport perpendicular to two AlAs layers separated by a GaAs quantum well in GaAs/AlAs heterostructures grown by metalorganic chemical vapor deposition.Resonant tunneling can be observed as inflections in the I‐V curves at room temperature. These inflections become more pronounced as the temperature is reduced, until negative differential resistance regions become visible for temperatures below 260 K. At low temperatures, the I‐V curves not only reveal two large negative resistance regions corresponding to the first energy level in the GaAs quantum well but also a structure which shows evidence of resonant tunneling through the second and possibly the third energy states in the well. Second derivative (d 2 I/d V 2) measurements confirm the existence of the resonances seen in the I‐V curves.