{'fraction_non_alphanumeric': 0.016149068322981366, 'fraction_numerical': 0.002484472049689441, 'mean_word_length': 5.296875, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Power Loss Evaluation for SiC MOSFET-Based Isolated Bidirectional Dual Active Bridge DC-DC Converter

Efficiency is one of the most important parameters to evaluate the performance of power electronic converters. This paper proposes a power loss evaluation model for silicon-carbide MOSFET which is based on a dual active bridge converter. Both power losses of silicon-carbide MOSFET and its free-wheeling silicon-carbide Schottky diode are taken into account in this model, especially the switching time of the silicon-carbide MOSFET is calculated accurately to estimate the switching loss. To validate the power loss evaluation model, a 10 kW dual active bridge prototype is designed and tested under different operation points to compare with the theoretical quantitative power loss evaluation results.