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Optical Properties of Reactively-Evaporated Silicon Oxynitride Films

Silicon oxynitride (SiOxNy) films are prepared by reactive evaporation of silicon monoxide in ionized nitrogen. The refractive index, the position of the I.R. absorption band and the composition of SiOxNy films are investigated to correlate with deposition conditions. By ionizing nitrogen gas, the amount of nitrogen incorporated into the films is increased while the amount of oxygen is decreased, greatly at higher substrate temperatures. At the substrate temperature of 200°C, the nitridation begins at the deposition rate of 25 Ås-1 and takes place progressively as the rate decreases. Films deposited in neutral nitrogen show no evidence of containing any nitrogen at all. The refractive indices and the absorption bands of SiOxNy films containing nitrogen up to 5 at. % reasonably well agree with published data for SiOx films. The absorption bands of these films are associated with the density ratios of Si-Si, Si-N and Si-O bonds.