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A study on the nucleation and MPCVD growth of thin, dense, and contiguous nanocrystalline diamond films on bare and Si3N4-coated N-polar GaN

We report upon the microwave plasma chemical vapor deposition (MPCVD) growth of polycrystalline diamond on varying crystallographic orientations of GaN (Ga-polar and N-polar), as well as on Si3N4-coated N-polar GaN, as applied to top-side heat spreading layers for III-N-based high electron mobility transistors. Integration of diamond with GaN in this configuration is subject to differing process constraints from previous research focusing on backside heat sinks. A critical requirement is to prevent hydrogen-related etching of the III-N surface in the H+ plasma ambient, as well as to avoid plasma damage to the GaN crystal or HEMT channel region near the surface. Thus we developed the seeding and MPCVD techniques under a low power density plasma with low sample temperatures during deposition. We systematically investigated samples seeded via polymer-assisted dip seeding in a nanoparticle suspension, which were then subjected to MPCVD growth under identical conditions. We evaluated the quality of the films via scanning electron microscopy and Raman spectroscopy to understand the relationship between grain size, interface abruptness, propensity for surface etching, as well as film uniformity. Finally, we were able to identify a process window for both N-polar GaN and Si3N4-coated N-polar GaN which yields thin, fully coalesced, nanocrystalline diamond films with an abrupt interface to the underlying substrate. These diamond films exhibit microscopic uniformity in crystal grain size, and macroscopic uniformity in thickness and interface abruptness via a process which is scalable to large wafer sizes.