{'fraction_non_alphanumeric': 0.01902587519025875, 'fraction_numerical': 0.0106544901065449, 'mean_word_length': 4.595744680851064, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Modelling and Parametric Analysis of Heatsink of an Insulated Gate Bipolar Transistor

Even the most efficient electronic devices suffered by the heat generation which causes the increase of temperatures. Similarly, an IGBT is also suffered due to the heat generation. Heat sink is essential for IGBTs, to dissipate the generated heat and to maintain the temperature of the IGBT under safer limits to prevent the failure of IGBT. Hence a better cooling system is essential to dissipate the generated heat from IGBT and to increase the life cycle. In most of the applications, air is used as cooling medium while other medium can be used for higher level of heat generation within IGBT. Commonly heat sinks are provided with fins to improve the heat removal rate. The present work describes the importance of junction temperature of IGBT and also about the role of heat sink. A mathematical model has been developed to predict the junction temperatures in IGBT at various duty cycles (0.1, 0.3 and 0.5). A steady state junction temperature of 145°C is estimated for a 0.5 duty cycle using the present method. By proper designing of heat sink, substantial decrement of heat generation nearly 46.6 % of can be achieved. It is concluded that the heat sinks are so effective in cooling of IGBTs component substantially.