{'fraction_non_alphanumeric': 0.02666666666666667, 'fraction_numerical': 0.0044444444444444444, 'mean_word_length': 5.731343283582089, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Thermal phenomena in deeply scaled MOSFETs

Thermal phenomena are having an increasing influence on drive and leakage currents in modern transistors. This trend is accelerated for confined-geometry devices, which include thermally-resistive interfaces and materials with low thermal conductivity (e.g. SiO2, Si 1-xGex). This paper summarizes the nanotransistor thermal design challenges and reviews the latest advancements in electro-thermal modeling