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P-n channel junctionless transistor

We propose a double gate junctionless transistor with P-type and N-type doping in vertical direct ion but laterally uniform doping in the channel that we call the P-N channel double gate junctionless transistor (PN-DG-JLT). The characteristics of PN-DG-JLT were compared with N-channel double gate junctionless transistor using 2-D numerical simulation. The PN-DG-JLT exhibits a favorable subthreshold leakage current and ON to OFF current ratio by controlling doping concentration of channel.