{'fraction_non_alphanumeric': 0.013664596273291925, 'fraction_numerical': 0.0, 'mean_word_length': 5.5528455284552845, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Displacement Current Induced by Electron Spin Resonance in Organic Semiconductor

A current induced by electron spin resonance (ESR) transitions is investigated for polymer diodes using electrically detected magnetic resonance techniques. Polymer diodes under photoexcitation are shown to exhibit a strong ESR-induced current. The ESR current exhibits a spiked time response for modulation of the resonance condition and is concluded to result from a displacement current. The magnitude of the displacement current is found to vary depending on polymers used for active layers. Trapping and de-trapping processes of carriers are expected to determine the time profile of the displacement current, suggesting that materials with shallow trap levels would be suitable for applications to spin-based devices.