{'fraction_non_alphanumeric': 0.019736842105263157, 'fraction_numerical': 0.006578947368421052, 'mean_word_length': 5.4156626506024095, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
4H-SiC Epi-Ready Substrate Qualification by Using Mirror Electron Microscope Inspection System

Crystal damage beneath the surface remaining after chemo-mechanical polishing (CMP) and basal plane dislocations (BPDs) of 4H-SiC epi-ready substrates have been inspected by using a mirror electron microscope inspection system non-destructively. Distributions of crystal damage and BPDs as well as their average densities are estimated by acquiring 80-μm square mirror electron images at positions distributed with an equal pitch over a substrate (“Discrete point set inspection”). Although the total inspected area is less than 1% of the entire substrate area, the inspection results for nine commercially available wafers reveal that there are large differences in surface polishing quality and BPD density between them. Evaluation on an epitaxial layer with a thickness of 10 μm grown on one of the inspected substrates indicated that correlation between distribution of the crystal damages on the substrate and that of bunched steps on the epitaxial layer surface.