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Dual-gate self-aligned a-InGaZnO transistor model for flexible circuit applications

This work elaborates on an amorphous Indium-Gallium-Zinc Oxide thin-film transistor model for a dual-gate self-aligned transistor configuration, enabling the design and realization of complex integrated circuits. The model originates from a mobility-enhanced transistor behavior model, whereby the additional backgate impacts key parameters, such as threshold voltage, mobility and subthreshold slope. The model has been validated for the full design flow and compared to measurement results, from single transistors, to inverters, ring oscillators and RFID transponder chips.