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All-Region MOS Model of Mismatch due to Random Dopant Placement

This paper presents a study of drain current matching in MOS transistors. A new model for MOS transistor mismatch is summarized, using the carrier number fluctuation theory to account for the effects of local doping fluctuations. CMOS test structures were designed and fabricated to allow an extensive experimental work, where current mismatch was measured under a wide range of bias conditions. The model shows good fitting with measurements over a wide range of operation conditions, from weak to strong inversion, from linear to saturation region, and allows the assessment of mismatch from process and geometric parameters.