{'fraction_non_alphanumeric': 0.027426160337552744, 'fraction_numerical': 0.004219409282700422, 'mean_word_length': 5.089743589743589, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Threshold Behavior of Photoinduced Plasmon-Resonant Self-Oscillation in a New Interdigitated Grating Gates Device

The new doubly interdigitated grating gate high-electron-mobility transistor (HEMT) has been subjected at room temperature to a 1.5 µm cw laser beam. The observed photoresponse shows a threshold behavior as a function of drain-to-source bias for different gate voltages. The result was interpreted as a clear signature of the self-oscillation of plasma waves.