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Dynamic scaling of plasma etched InP surface

Dynamical microroughening of the etch front of InP[100] due to Electron Cyclotron Resonance plasma etching was investigated. A quantitative study of the etch front morphology shows that the scaling law holds and the observed structure is self-affine. The low value of the growth exponent (/spl beta/=0.37) indicates that neither plasma reemission nor geometrical shadowing controls the Electron Cyclotron Resonance etching of InP.