{'fraction_non_alphanumeric': 0.019099590723055934, 'fraction_numerical': 0.010914051841746248, 'mean_word_length': 4.872, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design Approach

This paper presents a new architecture for an AlGaN/GaN HEMT frequency doubler using the active integrated antenna design approach. A microstrip patch antenna designed at the second harmonic is integrated with the HEMT. The antenna operates as a fundamental frequency reflector in this circuit. Using AlGaN/GaN with 1mm gate periphery, a 4 8 GHz frequency doubler was designed by the suggested design methodology, fabricated, and tested. For the AlGaN/GaN HEMT frequency doubler integrated with the patch antenna, conversion gain of 5 dB and output power of 25 dBm were achieved in pinch-off region with a drain voltage of 12 V.