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The impact of electron-electron interaction on electron transport in GaAs at high electric fields

We theoretically investigate the influence of electron-electron interaction and the Pauli exclusion principle on electron transport in highly doped homogeneous n-GaAs. The electron-electron interaction potential is split up into a long- and a short-range part. Electron-electron interaction due to the long-range part is treated as inelastic scattering at coupled plasmon-phonon oscillations; electron scattering processes due to the short-range part are described as elastical collisions of identical particles. The minimal wavelengths of coupled plasmon-phonon oscillations are given by lower limits. Velocity-field characteristics are computed for field strengths of 0<E<or=30 kV cm-1 and electron concentrations of 1016 cm-3 and 1018 cm-3. A small influence of electron-electron interaction and the Pauli exclusion principle is found at n=1018 cm-3. The large dip in mobility in GaAs at n=1019 cm-3 is shown to be caused by the exclusion principle.