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Stress Formation and Ga Gradients in CuIn1-xGaxSe2 Thin Film Absorber Layers and their Connection to Ga – In Interdiffusion

To explain the persistence of stable Ga gradients inside thin-film Cu(In,Ga)Se2 absorber layers, we propose to consider the inter-diffusion of In and Ga inside those layers and the subsequent formation of stresses. To substantiate this proposition we developed a theoretical model and performed numerical calculations of the inter-diffusion process and subsequent stress formation, showing that inter-diffusion will come to a halt before total intermixing of Ga and In occurred if the energy released by the diffusion process does not suffice to perform the elastic work required to deform the lattice and if no additional energy is released, e.g. by mechanisms of stress reduction through plastic deformation.