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Vertical implant isolation in GaAs

We investigate the potential of ion implantation being used to isolate multilayer semiconductor devices that have been grown epitaxially one above the other. It is proposed that such a novel procedure will enable vertical device integration and lead to an improvement in the density of devices per unit area of wafer surface, and also offer new circuit topologies. This is in distinction to the conventional form of device isolation when they are normally placed side by side (lateral). We show that some devices, but not others, can be isolated in a stack and restored to their pristine performance following implant (and anneal). As a result this strategy has a limited general application.