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A self-biasing class-E power amplifier for 5-GHz constant envelope modulation system

: This paper describes the design of 5-GHz fully integrated self-biasing power ampliﬁer (PA) for wireless transmitter applications in a 0.18- µ m CMOS technology. The proposed class-E PA employs the cascode topology with a self-biasing technique to reduce device stress. Three cascaded class-D driver ampliﬁers are used to actualize the sharp switching at the class-E power stage. All device components are integrated on chip and the chip area is 1.0 × 1.3 mm 2 . The measurement results indicate that the PA delivers 16.4 dBm output power and 35.4% power-added eﬃciency with 2.3 V power supply voltage into a 50 Ω load.