{'fraction_non_alphanumeric': 0.013235294117647059, 'fraction_numerical': 0.0, 'mean_word_length': 5.611650485436893, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Improve the performance of deep ultraviolet semiconductor lasers by optimizing the electron blocking layer

A method for improving the performance of deep ultraviolet laser devices by improving the electron blocking layer is proposed. It is applied to deep ultraviolet semiconductor laser diodes through the left tapered electron blocking layer (EBL). Comparison with the right tapered electron blocking layer or the non-tapered electron blocking layer, the laser of left tapered electron blocking layer device exhibits higher efficiency at the time of device, indicating a significant increase in electron transfer and holes, which improves the luminous efficiency of the device.