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Proton irradiation effects and annealing behaviors of 16Mb magneto-resistive random access memory(MRAM)

This paper presents the 3 MeV proton irradiation results of a 16Mb commercial MRAM. The total ionizing dose(TID) effects induced by proton irradiaton and the following room temperature annealing behaviors are analyzed in detail. Read bit errors and electrical failures were observed when the proton fluence was accumulated to 2.5×1011 particles/cm2. The peripheral circuits are more sensitive to proton irradiation. These results are useful for hardening MRAM designs aiming at space-borne applications.