{'fraction_non_alphanumeric': 0.02768729641693811, 'fraction_numerical': 0.004885993485342019, 'mean_word_length': 4.913461538461538, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
The influence of the Coulomb-blockade effect on repulsive RTS noise in nano-MOSFETs

When the gate length of MOSFETs is scaled into sub-100 nm, the Coulomb-blockade effect will severely affect the trapping processes of acceptor-like oxide traps, which leads to a relative large deviation of the RTS noise time-constant model from conventional Shottcky–Read–Hall (SRH) theory. The Coulomb energy of the trapping process increases with gate bias VGS, and large errors will be introduced to the extracted trap parameters based on the ratio of RTS noise when the Coulomb-blockade effect was neglected in a nano-MOSFET.