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Electrical characteristics of phosphorescent organic light emitting devices with various emissive film thickness

Multilayer organic light-emitting diodes are fabricated with a structure of ITO/CuPc/NPB/CBP:(t-bt)2Ir(acac)/BCP/Alq/LiF:Al, and the current density vs voltage characteristic of organic phosphorescent devices is investigated. The current density characteristics of triple-layer devices with different emission layer thickness is simulated into three regions, which are no-emission region, emission region and saturated region, corresponding to ohmic contact model, trap charge limited current model and space charge limited current model. The film thickness of emission layer shows obvious effect on the device current density.