{'fraction_non_alphanumeric': 0.04065040650406504, 'fraction_numerical': 0.023035230352303523, 'mean_word_length': 4.684615384615385, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Thermo-enhanced field electron emission by bandto-ban tunneling from p-Si/ZnO nano-emitters

We fabricated full array of uniform individual pSi/ZnO nano-emitters and demonstrated the strong thermoenhanced field emission. The emission current density showed about ten-time enhancement (from 1.31 to 12.11 mA/cm2 at 60.6 MV/m) by increasing the temperature from 323 K to 623 K. The strong thermo-enhancement was proposed to be benefit from the increase of band-to-band tunneling probability at the surface portion of the p-Si/ZnO nano-junction. This work provides promising cathode for portable x-ray tubes/panel, ionization vacuum gauges and low energy electron beam lithography, in where electron-dose control at a fixed energy is needed.