{'fraction_non_alphanumeric': 0.040502793296089384, 'fraction_numerical': 0.015363128491620111, 'mean_word_length': 4.975, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Preparation and properties of AlGaN/GaN MOS-HFETs with atomic layer deposited Al2O3 as gate oxide

Atomic layer deposition (ALD) technique at 300 °C was used to prepare an Al2O3 dielectric layer, to form MOS-HFETs. The static (output and transfer) and dynamic (Capacitance-Voltage) characteristics were used for evaluation of investigated devices. From the static characteristic, an increase of the saturation drain current (up to 35%) and extrinsic transconductance (up to 10%) of the MOS-HFETs were observed. Higher nS on the MOS-structure, evaluated from the C-V measurement, can be responsible for these effects. The gate leakage current was also reduced about four orders of magnitude in comparison to the HFET.