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Proposal of an analysis model of resist edge roughness caused by polymer-aggregate detachment in electron beam lithography

In low dose electron beam exposure, the number of scattering events is decreased and the local deposited energy is fluctuated. These are known to be the major reason for resist edge roughness in electron beam lithography, and they have been discussed using Monte Carlo simulation of electron trajectories.[l] However, it is found that not only these facts, but also characteristics of resist polymer aggregates affect the LER seriously.[2] In the present paper we discuss the influence of polymer-aggregate detachment for the resist LER. It is shown that the granular size of the molecular weight of 100,000 is around 25nm, and the size decreases with the decrease of the molecular weight.[2] It is known that electron beam cuts off the polymer chain and many fragment polymers are produced. For simplicity, we assume the size of the fragment polymer is also a function of its molecular weight, and we estimate the size by the following relation: