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Effect of technological modes of the p-n-junction formation on the radiation defect production in silicon solar cells

The effect of the time of the diffusion for p-n-junction formation on the radiation defect production in silicon solar cells (SC) that are irradiated by protons with 18.7 MeV energy is studied. It is found that in the SC base, A- and E-centers and divacancies with the levels E c at 0.23 and Ec at 0.39 eV are formed when irradiated by protons. It is shown that the E c level at 0.39 eV due to divacancy is the dominating recombination center responsible for the degradation of SC photovoltaic characteristics. It is revealed that the concentration of the E c level at 0.39 eV rises with the increase in the duration of the p-n-junction formation, which also reflects on the variation of the lifetime of minority charge carriers.