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Thermal Analysis and Experimental Evaluation of Melting Threshold Energy of Si Thin Film Structure in Laser Annealing

Simultaneous heat-diffusion equations including laser light absorption in an Si thin film structure are solved analytically to give the time evolution of temperature. In this model, it can be concluded that the threshold pulse energy needed to melt the surface of amorphous Si film depends on the pulse duration, the absorption coefficient, the thickness of the Si film, and the thermal properties of the substrates. Experiments were performed on amorphous Si films of various thicknesses on fused quartz and crystalline Si substrates to verify the analytical results. The samples were irradiated with a Q-switched Nd-YAG laser with time durations of 80 ns at λ=1.06 µm and 50 ns at λ=0.53 µm. The experimental results on the dependence of the melting threshold energy on the thickness of the amorphous Si are in good agreement with the calculated results.