{'fraction_non_alphanumeric': 0.02142857142857143, 'fraction_numerical': 0.004285714285714286, 'mean_word_length': 5.740384615384615, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Valence-band offsets at strained semiconductor heterojunctions

Valence-band offsets at lattice mismatched semiconductor heterojunctions are studied by using the interface-bond-polarity model with tight-binding approximation. The interface dipoles for lattice mismatched (001) III-V/IV heterojunctions are calculated based on the polarity of individual bond. It is found that the valence-band discontinuities depend strongly upon both of the strain conditions and the interface bond structures. An improved agreement of the calculated valence-band offsets with that of experimental measurement can be obtained by taking account of the strain effect and the interface dipole correction simultaneously.