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Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique

The flicker noise (also called 1/f-noise) of NMOS-transistors with a channel length down to 80 nm is analyzed in comparison to the 1/f-noise of standard transistors with identical doping and gate oxide thickness by a large number of measurements. It is shown that the noise of sub-100 nm-MOS-transistors increases very strongly in comparison to standard transistors with a channel length in the micrometer region, but that the principal behavior of this noise phenomenon does not differ significantly from known models.