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Optimization of reflection electro-absorption modulators

Characteristics of reflection electroabsorption modulators such as insertion loss and contrast ratio are discussed in terms of the absorption changes. Ultimate performances and simple design equations are derived. Both InGaAs/GaAs and GaAs/AlGaAs modulators were fabricated according to the designs rules; the modulators exhibit state-of-the-art performances. For the GaAs/AlGaAs device, a reflection change of 66 percent at 5 V operating voltage was achieved with a 1.2 dB insertion loss.