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Study of Drain-Induced-Barrier Lowering in Deep Submicron MOSFETs Versus Temperature

A new method for the extraction of the Drain Induced Barrier Lowering (DIBL) parameter in a MOSFET is presented. This method is employed for the study of the influence of temperature on the DIBL phenomenon. The DIBL coefficient is found to be almost temperature independent between 50K and 300K. The method also allows the intrinsic output characteristics of the device to be re-calculated.