{'fraction_non_alphanumeric': 0.021890547263681594, 'fraction_numerical': 0.0009950248756218905, 'mean_word_length': 5.618421052631579, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Experimental investigation of the performance of GaAs/AlGaAs quantum-well infrared photodetectors from the Industrial Microelectronics Ctr., Sweden

In this paper we present an experimental investigation of the performance of GaAs/AlGaAs multiple quantum well photodetectors. The purpose of this exercise was to independently evaluate and verify the responsivity of the GaAs/AlGaAs quantum well infrared photodetectors developed at the Industrial Microelectronics Center in Sweden. These devices use 2D gratings to couple radiation into the detectors and a cladding layer to enhance the coupling of radiation. The devices were of two types: those optimized for high detectivity, and those optimized for high quantum efficiency. The tests performed on these devices included measurement of optical responsivity vs. bias, spectral response, Detectivity (D*), and measurement of cross-talk between pixels. Several interesting observations were made during the investigation and will be reported in the paper.