{'fraction_non_alphanumeric': 0.02564102564102564, 'fraction_numerical': 0.0030165912518853697, 'mean_word_length': 4.981981981981982, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effect of Phosphorus Doping and Deposition Temperature on the Deep-Level Transient Spectra in a-Si:H

Both voltage- and photoinjected deep-level transient spectroscopy measurements were performed on phosphorus-doped a-Si:H films to clarify the nature of a hole trap state located at Ev+0.6 eV, which was extinguished by light soaking. The density of trapped holes at the state in as-deposited films was weakly dependent on the phosphorus doping concentration. However, it decreased with increasing deposition temperature of the films. These results suggest that the hole trap state is related to weak silicon bonds which act as a precursor to optical degradation.