{'fraction_non_alphanumeric': 0.016849199663016005, 'fraction_numerical': 0.0, 'mean_word_length': 5.123711340206185, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
The Effect of Metal Contact Doping on the Scaled Graphene Field Effect Transistor

Herein, the effect of metal contact doping on the scaled graphene field effect transistor (GFET) is investigated. Different from the traditional semiconductors device, the drain current of GFET is not inversely proportional to the channel length (LCH). The abnormal scaling behavior for drain current in GFETs can be attributed to the modification of channel resistance induced by the penetration of contact metal doping. In addition, the field‐effect mobility (μEF) of long channel GFET trend to saturate with decreasing LCH, which is consistent with the diffusive transport model. As the channel length is further scaled down, the μEF at first increases drastically and then decreases due to the enhanced effect of electrical property of graphene under the metal electrode as well as the contact resistance on the carrier transport of GFET. This study indicates that there will be a trade‐off between scaled channel length and the best performance of GFET. Further efforts should be made to modulate the properties of graphene both in channel and contact region to improve the scaling behavior of GFET.