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Measurement of Band Discontinuity at ZnSe/GaAs Boundary Using Free Electron Laser

We investigated the band discontinuity at the ZnSe/GaAs boundary using the free electron laser internal photoemission (FEL-IPE) technique. This technique is based on photocurrent spectroscopy utilizing the tunability and intense peak power of the FEL operative in the infrared range. We have found the threshold of the photocurrent near the photon energy of 110 meV which can be identified as the band discontinuity in the ZnSe/GaAs heterojunction.