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Hall Mobility and Scattering Mechanism of Holes in Boron-Doped Homoepitaxial Chemical Vapor Deposition Diamond Thin Films

The temperature dependence of the Hall mobility µH has been measured from 140 to 870 K for nine boron-doped homoepitaxial chemical vapor deposition (CVD) diamond thin films. The experimental µH data are compared with their theoretical µH values that are calculated by an iterative technique, assuming scattering by ionized impurities, acoustic deformation potential and nonpolar optical phonons. The donor concentration ND, the acoustic deformation potential constant E1 and the coupling constant of nonpolar optical phonons Dnpo are used as fitting parameters. The experimental data of the hole concentration p are also analyzed by a fitting procedure. The acceptor concentration NA, the donor concentration ND, and the acceptor ionization energy EA are used as fitting parameters. The fitting analyses of µH yielded an average Dnpo=(1.2±0.2)×1012 eV/m. Considerable differences were observed between ND values estimated from the fitting analyses of µH and those from the p-analyses. The average E1 for the samples with little difference between the two types of ND is 14.5 eV, which is in agreement with that of a natural diamond of high quality. The average EA for the samples with a low or medium doping level is 0.365 eV, which is in good agreement with those in the literature. Some indications of the contribution of hopping conduction in the low-temperature range were observed.