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Characterization Of Gallium Oxide With A Novel Non-Contact Electrical Metrology, CnCV, For Wide Bandgap Semiconductors

Cost savings and short feedback time are significant advantages of the corona non-contact capacitance voltage (CnCV) technique, recently introduced for wide bandgap SiC, GaN, and AlGaN/GaN as a replacement for C-V measurements on fabricated electrical test structures. The goal of this work is to verify the basic applicability and effectiveness of CnCV in characterization of Ga2O3. The results demonstrate excellent measurement conditions on Ga2O3 epitaxial and bulk grown wafers, enabling the determination of important electrical properties such as the dopant concentration profile, initial surface charge, electron affinity and depletion current.