{'fraction_non_alphanumeric': 0.030441400304414, 'fraction_numerical': 0.0380517503805175, 'mean_word_length': 4.222222222222222, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Design considerations for 60 GHz CMOS power amplifiers

This paper describes design considerations for millimeter-wave CMOS power amplifiers (PA). Solutions are presented from device level to circuit level and demonstrated by a measured 60 GHz PA prototype in 65 nm bulk CMOS technology. The proposed PA achieves a peak output power of 14 dBm with a peak power-added efficiency (PAE) of 7.2%. The small signal gain is 10.2 dB and 1-dB compression output power is 10.8 dBm. The transformer-based passives employed in the design enable a compact layout with an active area of 0.3 mm2. The PA consumes a quiescent current of 143 mA from a 1.6 V supply voltage.