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Thermal annealing effect on photoexcited carrier dynamics in GaBixAs1−x

Carrier dynamics in MBE-grown GaBixAs1−x layers was investigated by the optical pump-–THz probe technique. Rapid thermal annealing at temperatures up to 700 °C has a dual effect on the electron decay characteristics. For the GaBi0.04As0.96 layer it led only to a small change of the decay time, whereas for the layer with x = 0.06 this parameter decreased by two orders of magnitude and became shorter than 1 ps. It can be assumed that the recombination centers in GaBiAs are more likely to occur in the layers with a larger Bi composition, a bigger lattice mismatch with the substrate.