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Low-temperature (150 °C) activation of Ar+O2+H2-sputtered In–Ga–Zn–O for thin-film transistors

In–Ga–Zn–O (IGZO) sputtering in an Ar, O2, and H2 atmosphere followed by annealing represents an effective method for defect reduction of the resulting films. The carrier density of Ar+O2+H2-sputtered IGZO films increases with increasing H2 amount during sputtering; however, we found that the increased carrier density was markedly decreased by annealing even at 150 °C. The Ar+O2+H2-sputtered IGZO was used as the active channel in thin-film transistors (TFTs), which led to markedly improved electrical properties after annealing at 150 °C, compared with those obtained using conventional Ar+O2-sputtered films. The proposed method is very promising for low-temperature-processed oxide TFTs.