{'fraction_non_alphanumeric': 0.015082956259426848, 'fraction_numerical': 0.0, 'mean_word_length': 6.545454545454546, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Electrical Properties of p-Type Hydrogenated Amorphous Silicon-n-Type Crystalline Gallium Arsenide Heterojunctions

Electrical properties of heterojunctions consisting of p-type hydrogenated amorphous silicon and n-type crystalline gallium arsenide were investigated by measuring current-voltage characteristics and their temperature dependence. The forward currents whose slopes were kept almost constant for various temperatures increased exponentially with increasing applied voltage. It was found that the carrier injection mechanism through this junction was essentially the same as that for hydrogenated amorphous silicon/crystalline silicon heterojunction.