{'fraction_non_alphanumeric': 0.03975155279503106, 'fraction_numerical': 0.02608695652173913, 'mean_word_length': 5.248062015503876, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Characteristics of Pt/SBT/ZrO2/Si structure for metal ferroelectric insulator semiconductor field effect transistor applications

Abstract Pt/SBT/ZrO2/Si structure was proposed for metal ferroelectric insulator semiconductor field effect transistor (MFIS-FET) applications. SrBi2.4Ta2O9.(SBT) thin film was prepared using liquid source misted chemical deposition on Si(100) substrate with ZrO2 buffer layer deposited by DC reactive sputtering. Capacitance of the Pt/SBT/ZrO2/Si structure in the accumulation region became larger with decreasing oxygen content in the sputtering gas for ZrO2 deposition and decreasing thickness of ZrO2 buffer layer. The Pt/SBT/ZrO2/Si structure exhibited C-V hysteresis loop with the memory window of 0.72-0.97 V at ±5 V, and could be applicable for MFIS-FET applications.