{'fraction_non_alphanumeric': 0.057034220532319393, 'fraction_numerical': 0.03802281368821293, 'mean_word_length': 6.121621621621622, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
49.1: Invited Paper: Optical Sensitive Organic Memory Transistors

This work discusses the electrical properties of the 2,9‐di‐decyl‐dinaphtho‐[2,3‐b:20,30‐f]‐thieno‐[3,2‐b]‐thiophene (C10‐DNTT) organic field effect transistors under different programming conditions. We noticed that the shifting of threshold voltage (Vth) can last for more than 20000 seconds which allows these devices to store information as a memory buffer. These devices can be further integrated into an array form for large area optical signal sensing.