{'fraction_non_alphanumeric': 0.028985507246376812, 'fraction_numerical': 0.02608695652173913, 'mean_word_length': 4.663934426229508, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
7 nm/V DC tunability and millivolt scale switching in silicon carrier injection degenerate band edge resonators.

We demonstrate electro-optical tuning of degenerate band edge resonances in Si photonic waveguides for applications including tunable filters, low voltage switches, and modulators. Carrier injection modulation is enabled by introducing periodic Si slabs to electrically connect the resonator to P and N dopants. Measured devices yield a large DC tunability of 7.1 nm/V and a peak switching slope of 206 dB/V. Digital data transmission measurements at 100 Mb/s show 3 dB of switching with a swing voltage of 6.8 mV, 91.4 aJ/bit switching energy, and 1.08 pJ/bit holding energy.