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Experimental Analysis of Velocity Overshoot Degradation in Sub-0.1 µm Fully-Depleted SOI-MOSFETs

We have experimentally investigated the carrier velocity overshoot and the physical mechanism for the carrier velocity degradation in fully-depleted silicon-on-insulator (SOI) n-channel metal-oxide-semiconductor field-effect-transistors (nMOSFETs). In sub-0.1 µm region, the velocity overshoot greater than 1×107 cm/s is realized at room temperature when the gate drive is low. However, in the higher gate drive region, the carrier velocity is degraded remarkably. The velocity degradation due to the self-heating effects is found to be smaller than the degradation caused by the increase of the vertical field. Moreover, in addition to the above velocity degradation mechanism, the velocity is also degraded by some anomalous scattering at higher gate drive. However, in sub-0.1 µm SOI-nMOSFETs, a high performance can be achieved by using the velocity overshoot effect at a low supply voltage.