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Crystallization of amorphous‐Si films by pulsed YAG2ω green laser for polycrystalline Si TFT fabrication

Abstract— A pulsed YAG2ω green laser with a line‐shaped beam was applied in the crystallization process to fabricate polycrystalline‐Si TFTs, and this procedure was compared with excimer‐laser annealing (ELA). YAG2ω lasers are superior to excimer lasers in that they have fewer items to maintain and a longer working time ratio. The crystallization mechanism for YAG2ω laser annealing (YLA) based on the lateral growth of grain is different from that of ELA. Its fluence margin was obtained from the n‐channel mobility measured from fabricated TFTs and was found to be twice as large as that for ELA. We also found that overlapping irradiation does not change the mobility of TFTs. This is because the distribution of grain size is almost the same as in non‐overlapping regions. This suggests the possibility of overlapping irradiation in YLA.