{'fraction_non_alphanumeric': 0.012091898428053204, 'fraction_numerical': 0.0, 'mean_word_length': 5.369230769230769, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A nonlinear programming approach to exposure optimization in scanning laser lithography

Laser scanning lithography is a maskless method for exposing films of photoresist during semiconductor manufacturing. In this method a focused beam is scanned over a surface with varying intensity to create features in the photoresist. Given the shape of a desired feature, an exposure pattern must be found that approximates this shape in the developed photoresist. This can be cast as an optimization problem, which is complicated by the non-negative nature of the exposure function and the non-linear photochemistry of the film. In this article, a nonlinear programming approach is described that results in a tractable optimization problem which accounts for all of the practical constraints encountered in laser scanning lithography.