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Fabrication and Investigation of Tungsten Deposit on Top and Bottom Surfaces of Thin Film Substrate

Electrons with energies of 20, 200, and 400 keV were used in electron-beam-induced deposition (EBID) to investigate deposition on both the top and bottom surfaces of a film substrate when an electron beam is injected into the top surface. Tungsten tips were successfully fabricated on the bottom surface of the film substrate using 200 and 400 keV electrons. The microstructure as-deposited at a different electron energy is a mixture of nanocrystallites and amorphous materials. The nanocrystallites of the structure deposited using 20 keV electrons (1–2 nm) were smaller than those of the structures deposited using 200 keV (2–4 nm) and 400 keV electrons (3–5 nm). The proportion of amorphous materials in the as-deposited structure was reduced using high-energy electrons. There was no difference in microstructure between the top and bottom tips simultaneously deposited on the film substrate using high-energy electrons.