{'fraction_non_alphanumeric': 0.03655913978494624, 'fraction_numerical': 0.012903225806451613, 'mean_word_length': 4.825, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Cathodoluminescence evaluation of electrical stress condition of Si-SiO/sub 2/ structures

In this paper, we describe the observation of a new phenomenon which may be extended to provide a non electrical and physical evaluation of the electrical stress degradation of Si-SiO/sub 2/ structures. Two novel observations, the hot-electron-injection-induced 2.7 eV luminescence centers and the interfacial stress dependence of the 2.7 eV CL peak build-up, are described.