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Characterization of Grain Structure and Porosity in Selective Laser Melted Cu-4.3Sn for Enhancing Electrical Connector Fabrication

Copper (Cu) has the highest electrical conductivity of any commercial metal; it is surpassed only by silver, which is prohibitively expensive for use in commercial applications. Worldwide, up to 65% of Cu and its alloys produced are destined for electrical applications [1]. Although Cu and its alloys have seen extensive use in the development of additive manufacturing (AM) technology, they often assume the role of a binding or infiltration phase rather than the primary material. Developments in selective laser melting (SLM) have allowed for the fabrication of relatively high density Cu alloy components with unique microstructures which opens up the possibility of using AM for the production of electronic components. However, the expansion of AM into electronic applications requires an understanding of microstructure development during fabrication of Cu alloys by SLM. Although grain structure has been characterized in some titanium, aluminum, and ferrous alloys, there has been limited work characterizing Cu alloys fabricated by SLM [2-4]. In this study the microstructure of a Cu-4.3Sn alloy fabricated by SLM was investigated using scanning electron microscopy (SEM) and aberrationcorrected scanning transmission electron microscopy (STEM).