{'fraction_non_alphanumeric': 0.036053130929791274, 'fraction_numerical': 0.0, 'mean_word_length': 4.893854748603352, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Spin polarons in high-Tc copper oxides: Differences between electron- and hole-doped systems.

It is argued that in the small-doping region there is an asymmetry between the hole-doped and the electron-doped copper oxide systems. This asymmetry is reflected in both the magnetic and transport properties. Significant oxygen {ital p}-{ital p} orbital overlap leads to a large conduction-band width, which has qualitatively different effects on the two differently doped systems. In the hole-doped case, large-spin polarons are formed as the system is doped; this leads to a quick destruction of the antiferromagnetic correlation. In the electron-doped case, doped carriers are more localized; thus the magnetic correlation is more robust with respect to doping. In the low doping concentration, the low-temperature conductivity is shown to be two-dimensional variable-range-hopping type. The conductivity, which is expected to scale with the asymmetry of the magnetic phase diagram, is smaller in an electron-doped system than that of a hole-doped system.