{'fraction_non_alphanumeric': 0.0367504835589942, 'fraction_numerical': 0.03481624758220503, 'mean_word_length': 5.439834024896266, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
High-performance devices based on InSe-In1-xGaxSe van der Waals heterojunctions.

Multilayer InSe is a promising material for high-performance optoelectronic applications because of its small direct bandgap and good light absorption. However, as a photoconductive photodetector, multilayer InSe photodetectors endure large dark current and high driving power. In this work, we study the electrical properties of InGaSe alloys and demonstrate the high-performance devices based on multilayer InSe-In0.24Ga0.76Se van der Waals heterojunctions (vdWHs). The electrical properties of InGaSe alloy samples strongly depend on the ratio of In to Ga, and the In0.24Ga0.76Se alloy shows a p-type transport behavior. More importantly, the multilayer InSe-In0.24Ga0.76Se vdWHs device is demonstrated as a high-performance forward diode, photodiode, and self-powered photodetector (SPPD). Multilayer InSe-In0.24Ga0.76Se diode shows a high forward rectification ratio over of 103 without gate-modulation at room temperature, which is superior to most of multilayer vdWHs devices. Moreover, the vdWHs photodiode has broadband photoresponse spectrum (400 nm-1000 nm) and high-performance photoresponse. The light switching ratio, detectivity, and responsivity are 103, 1012 Jones, and 49 A/W for 400 nm illumination, respectively. Furthermore, the vdWHs SPPD also shows sensitive photoresponse to the broadband spectrum of 400-1000 nm. Our work offers an opportunity for multilayer vdWHs devices applications in high-performance electronic and optoelectronic devices.