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Transport Mechanism of Alloyed p+-n Heterojunctions with Relatively Heavy Doping

An analytical expression for the tunneling current through single-step interface state in the heterojunction has been presented. The calculated result can be compared with the previous theories. The temperature dependences and other parametric variations in the V–I characteristics are discussed. The p+-n Si–Ge heterojunction is fabricated by alloying in H2 atmosphere. The analytical solution is in fairly good agreement with the experimental results. In the highly reverse biased region, most of current through the junction is due to the interband tunneling transition in germanium.