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Laser gettering of GaAs

A method of impurity laser gettering applicable to complex semiconductors of the CdTe type is suggested and investigated. The methods of photoluminescence and structural analysis revealed the efficiency of laser recrystallization of a semiconductor plate non-operating area which further serves as the getter zone. The mode of laser radiation from the self-absorption area, which leads to priority evaporation of a more volatile component in the complex semiconductor, forms a stable zone of mechanical stresses which in further heat treatment serves as an efficient run-off for undesired impurities and dot defects.