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Effects of Oxygen Ion Implantation on the Conduction Electron Spin Resonance in Aluminum

Changes induced by oxygen implantation in the temperature dependence of the linewidth, g value and peak height of CESR in aluminum foils were investigated, using the spin transmission technique. It was found that oxygen implantation induces excess conduction-electron-spin relaxation, which takes maxima at 7 K and 77 K. The results were analyzed by Hasegawa's model incorporating the Kondo effect. The excess relaxation was simulated fairly well by “resonant Kondo scattering” with two kinds of impurity states. Both the g value and peak height revealed a large contribution to interzone scattering at the Fermi surface from complex localized surface states. Based on detailed observations, the existence and contribution of localized moments at the Al/AI2O3 interfaces with oxygen implantation are suggested.