{'fraction_non_alphanumeric': 0.04029850746268657, 'fraction_numerical': 0.022388059701492536, 'mean_word_length': 4.686440677966102, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Multi-Wall Channel Transistor for P-type Metal Oxide Semiconductor Field-Effect Transistor Performance Improvement

We demonstrate the enhanced hole mobility of p-channel metal oxide semiconductor field effect transistors (PMOSFETs) using a multi-wall structural channel. Multi-wall channels with a height of 35 nm and a width of 70 nm were prepared at 70-nm half-pitches. The multi-wall channel structure produces a (110) surface channel and a strain produced by polycrystalline silicon (poly-Si) gates. These enhance hole mobilities. The degree of enhancement depends on the wall height. We obtained a 45% increase in hole mobility with a 35-nm-high wall at 0.8 MV/cm.