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Comparison of buffer material for InAs quantum dots on GaAs substrate

This paper describes the buffer-material dependence of 1.3 mum-range quantum dots (QD), a subject that is useful for increasing the dot density while maintaining the photoluminescence (PL) intensity. Four types of buffer-material, that is, GaAs, GaAsSb, InGaAs, and Si, were investigated. The PL intensity with the same QD density increases about 3 times when GaAsSb-buffer is used