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Current injection induced terahertz emission from p-n Si structures

We report on experimental observation of terahertz electroluminescence induced by current injection in Si p-n-structures at low temperatures. The spectra of the emission demonstrate superposition of narrow emission lines and broad background. The peak positions of the emission lines are in reasonable agreement with the known energies of intracenter optical transitions in phosphorus donor. The broad background most likely is caused by the THz emission from hot noneqilibrium carriers, which can appear in the structure under the injection.