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Statistical model of semiconductor field emitter with atomically clean surface

The statistical characteristics of low-frequency field emission current fluctuations contain information about the microscopic properties of solid surfaces. For p-type Ge with an atomically clean surface the distribution functions of the field emission current noise from local surface areas of about 10-12 cm2 in the frequency range 2*103 Hz have been investigated. A new method has been developed to simulate field electron microscopy. A pseudo relief of the emitting site is simulated making use of experimental data on variations of the distribution function with time. A 'noise pattern image' of the emitting site of the surface investigated is presented in this paper.