{'fraction_non_alphanumeric': 0.02118003025718608, 'fraction_numerical': 0.0226928895612708, 'mean_word_length': 4.706896551724138, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
SAW Resonator Band-Pass Filter on GaN/Si operating at 8 GHz

This paper presents the design, fabrication and measurements of a GaN/Si surface acoustic wave resonators band pass filter operating at 8 GHz. The design is based on multiphysics simulations, equivalent circuit modelling and 3D electromagnetic analysis. The resonators with electrodes width of 130 nm were fabricated using electron beam lithography and lift-off technique. The measured insertion losses show a minimum value of 13.2 dB at 8.06 GHz and a 20 MHz 3 dB bandwidth. The filter is compact and can be directly integrated in a GaN based X-band monolithic microwave integrated circuit platform.