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Enhanced Fill of Tungsten in 3D NAND Wordline: A View of Molecular Diffusion

The increasing number of stacking layers in 3D NAND memory is challenging the tungsten fill process used in wordline (WL) structures. Herein, molecular diffusion in thermal CVD/ALD is studied to facilitate conformal coverage of tungsten WL fill. A revision of Knudsen diffusivity is proposed based on the geometry of 3D WL.