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The Influence of Recombination-Induced Migration of Hydrogen on the Formation of VSi-H Complexes in SiC

In this work, the first evidence of the recombination-induced formation of hydrogen complexes with Si vacancies (VSi-H) in 4H and 6H-SiC epilayers is obtained. It is established that the availability of hydrogen that is not tied up with stable complexes following plasma hydrogenation leads to the additional formation of the VSi-H centers under optical excitation at low-temperatures. This process may be observed as an increase of the VSi-H PL in certain types of hydrogenated samples. The PL transient is found to be a superposition of two effects: (1) the growth due to the recombination-induced formation of the corresponding defect centers; and (2) the quenching due to the transition of the VSi-H centers to their metastable state.