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Comparison of experimental and theoretical curvature considerations for direct wafer bonding

This work compares experiment with a theoretical model of the bondability of silicon samples of various curvature. Spontaneous bonding of a 500 micrometers silicon wafer requires a curvature of greater than 100 m. A theoretical model has been developed to predict the curvature conditions for bonding of non ideal samples with radii of curvature smaller than 100 m where an external pressure is applied to the material to cause the pair to become conformal. This theory also predicts the final curvature of the bonded pair. In this paper the force required to bond the pair an the final radius of curvature after bonding is experimentally measured and compared with this theory.