{'fraction_non_alphanumeric': 0.03944773175542406, 'fraction_numerical': 0.007889546351084813, 'mean_word_length': 5.226993865030675, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effect of Hydrogen Dilution of Silane in Hydrogenated Amorphous Silicon Films Prepared by Photochemical Vapor Deposition

Hydrogenated amorphous silicon (a-Si:H) films were prepared by mercury photosensitized decomposition of silane-hydrogen (or-helium) gas mixtures. In hydrogen dilution, a-Si:H films were deposited from 20-100% of the silane fraction and hydrogenated amorphous-microcrystalline mixed-phase silicon (µc-Si:H) films were deposited for less than 10% of the silane fraction. The Si-H2 bond density and optical gap for a-Si:H films increased upon decreasing the silane fraction. The preferential orientation of the crystallites in µc-Si:H films was greatly changed by the silane fraction. However, the film characteristics did not change upon helium dilution. It was found that the hydrogen radical plays a significant role in the film-deposition process. Large-grain-size µc-Si:H films have been obtained, as compared with the grain size for films made by the conventional glow-discharge technique.