{'fraction_non_alphanumeric': 0.026706231454005934, 'fraction_numerical': 0.002967359050445104, 'mean_word_length': 5.25, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Low-temperature light emission in a forward-biased Schottky diode with a n-doped channel

Electroluminescence (EL) from a forward-biased Schottky diode on modulation Si /spl delta/-doped pseudomorphic GaAs/InGaAs/AlGaAs heterostructure grown by metalorganic vapor phase epitaxy is investigated in this work. Comparative study of the EL and the photoluminescence (PL) at low temperature is presented. Linear current dependence and a nonmonotonic temperature dependence of the EL intensity with a maximum around T=60 K were observed. We propose that hole injection from the Schottky gate is responsible for the optical recombination within the InGaAs channel of our structure.