{'fraction_non_alphanumeric': 0.02350265352539803, 'fraction_numerical': 0.014404852160727824, 'mean_word_length': 5.285714285714286, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Characteristics of Tantalum Carbo-nitride Thin Films Deposited with Atomic Layer Deposition Process

plasma enhanced atomic layer deposition (PEALD) and thermal atomic layer deposition (Thermal-ALD) processes using tert-butylimido-tris(diethylamido)tantalum [TBTDET] and reactive gases such as hydrogen and ammonia. Effect of the process parameters such as deposition temperature, plasma power and precursor injection time on the growth rate, film composition and electronic properties was evaluated. It was confirmed that TaC, Ta3N5, TaN and Ta2O5 phases were formed in the film with the oxide phase by the uptake from the atmosphere after the deposition. Electrical properties of TaCN film were affected by the solid phase composition with TaC and TaN as a conducting phase and Ta3N5 and Ta2O5 as an insulating phase. As the deposition temperature, plasma power and duration time were increase, the carbide phase and TaN phase in the film were increased and the electrical resistivity was decreased in the PEALD process using hydrogen. In the PEALD process using ammonia, the formation of carbide phase was suppressed and the nitride phase was increased with more Ta3N5 phase. The resistivity of TaCN film deposited with PEALD process using hydrogen and ammonia were about 350 µΩ·cm and 6.75×10 4 µΩ·cm, respectively.