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High Speed Deposition of SiO2 Films with Plasma Jet Based on Capillary Dielectric Barrier Discharge at Atmospheric Pressure

We present an experimental study of plasma enhanced chemical vapor deposition (PECVD) of SiO2 films from tetraethoxysilane (TEOS) using a plasma jet based on capillary dielectric barrier discharge (CDBD) at atmospheric pressure. We tried three different configurations: (a) coaxial type, (b) a crossed type with a vertical plasma jet and a tilted TEOS supply, and (c) another crossed type with the reversed arrangement. The deposition rate of SiO2 films increased with the driving frequency of the plasma jet in all configurations, and as the best record it reached up to 280 nm/s at a frequency of 15 kHz in the configuration (c) with the aid of O3 supply, which was three times as fast as that measured in the configuration (a) without O3 supply.