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Energy Band Profile Optimization of the Emitter for High Efficiency c-Si Heterojunction Solar Cell

AFORS-HET was utilized to explore the optimized energy band profile of the emitter(p) for the c-Si(n) based heterojunction solar cell. To obtain high efficiency, the valence band maximum level (E<inf>V</inf>) of the emitter should be lower than that of the c-Si base. When the valence band offset |ΔE<inf>V</inf>| = 0.4 eV, the doping activation energy (E<inf>a</inf>) of the emitter can be as high as about 0.36 eV. Except for this, E<inf>a</inf> should be reduced to lower E<inf>f</inf>. The conduction band minimum level (E<inf>C</inf>) of the emitter should be at least 0.2 eV higher than that of the c-Si base.