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Formation Process of Stacking Faults with Ringlike Distribution in CZ-Si Wafers

In some large diameter CZ-Si wafers, stacking faults with ringlike distribution are observed after thermal oxidation. Although the stacking faults are formed through wafer thickness from surface into bulk after dry O2 or steam oxidation, no stacking faults are observed after N2 annealing or HCl+dry O2 oxidation. All the stacking faults, even in bulk, are therefore considered to be formed by the condensation of silicon self-interstitials generated at the surface during oxidation. The ringlike distribution is found to originate from grown-in oxygen precipitates observed right in the center of the stacking faults by transmission electron microscope.