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Silicon field emitter microtip array fabricated by ion-beam etching

A relatively simple and effective method to fabricate 128- X 128-element emission microtips array on the surface of silicon substrate is proposed. The method mainly involves photolithographic process and argon ion beam etching. Typical center-to-center spacing of microtips fabricated is 50 micrometer, typical height is about 11 micrometer, and typical sharpness is about 9 sr. The scanning electron microscope analysis and the surface style measurement are presented for the surface morphology of two kinds of silicon emitters microtips (square-based pyramidal microtips and circle-based cone microtips) and circle microtips array. The experiments show that the technique used can be applied to fabricate silicon emitter microtips array and circle microtips array of larger area.