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Wavelength selective data storage in InGaAs–GaAs quantum dots

We present the first demonstration of wavelength selective charge storage (electrons or holes) in In0.5Ga0.5As self‐assembled quantum dots with optical readout. Our results demonstrate unambiguously wavelength selective charging with long (≫25 μs) data storage lifetimes and enable us to probe directly carrier excitation processes and potentially electron spin dynamics in micro‐ensembles of quantum dots.