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Laser-assisted etching to fabricate a buried continuous-graded cavity for unstable semiconductor laser diodes

We have developed a method to etch Ill-V semiconductor materials to produce a parabolic cross sectioned channel. Laser-assisted wet-chemical etching has been used to produce channels 20 to 200 p.m wide, with a corresponding center depth of 0.1 to 0.5 .tm. We will discuss recent experimental results of etching n-type gallium arsenide (GaAs). Future considerations include the fabrication of antiguided wide-stripe laser diodes using this procedure.