{'fraction_non_alphanumeric': 0.0262891809908999, 'fraction_numerical': 0.0, 'mean_word_length': 5.265822784810126, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Investigations on the evaluation of schottky barrier diode parameters of the proton irradiated Ti/n-GaAs

Abstract An innovative approach has been made for the evaluation of Schottky barrier diode parameters namely, ideality factor (n), barrier height (O B) and series resistance (R s) from forward I—V characteristics. The ln(I) vs V plot for a diode in this region without the influence of the series resistance shows a linear part of the I—V characteristics. In this analysis, the Schottky barrier diode parameters have been extracted from the CONTROL (unirradiated), irradiated and annealed diodes. The major advantages of this method are the Schottky barrier diode parameters with high series resistance can be evaluated and the linear regression can be used for the entire bias range, which raise the accuracy of the results. The best fitted Schottky barrier diode parameters were calculated from the forward I—V characteristics, compared with the experimental results and discussed.