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Preparation of Pb(Mg1/3Nb2/3)O3–Pb(Zr,Ti)O3 Thin Films by RF-Magnetron Sputtering and Their Electrical and Piezoelectric Properties

The 0.875Pb(Mg1/3Nb2/3)O3–0.125Pb(Zr,Ti)O3 [0.125PMN–0.875PZT (50/50)] thin films, which have an extremely large piezoelectric coefficient d31 of -225 pm/V, have been successfully obtained on (100) Si substrates by RF-magnetron sputtering. These PMN–PZT thin films have a high (001) orientation. The dependences of the electrical and piezoelectric properties of these films on substrate heating temperature were evaluated. The εr of PMN–PZT films prepared in the substrate heating temperature range of 540 to 620 °C was almost constant at 1400. The d31 was measured from the tip deflection of the cantilever beams. Even without a poling treatment, the d31of the PMN–PZT thin films at 580 °C was -225 pm/V. This d31 was 50% larger than that of PZT thin films deposited under the same conditions. These PMN–PZT thin films are attractive materials for micro actuator applications, especially for ink jet head actuators.