{'fraction_non_alphanumeric': 0.021335807050092765, 'fraction_numerical': 0.0009276437847866419, 'mean_word_length': 5.347058823529411, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Charge-Based Compact Drain Current Modeling of InAs-OI-Si MOSFET Including Subband Energies and Band Nonparabolicity

In this article, we report a physics-based compact model of drain current for InAs-on-insulator MOSFETs. The quantum confinement effect has been incorporated in the proposed model by solving the 1-D Schrödinger–Poisson equations without using any empirical model parameter. The model accurately captures the variation of surface potential, charge density in the inversion layer, and subband energy levels with gate bias inside the quantum well. The conduction-band nonparabolicity effect on modification in eigenenergy, effective mass, and density of states is derived and incorporated into the proposed model. The velocity overshoot effect that originates from the quasi-ballistic nature of carrier transport is also considered in the model. The proposed drain current model has been implemented in Verilog-A to use in the SPICE environment. The model predicted results are in good agreement with the commercial device simulator results and experimental data.