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Electrical Properties of GaAs Overgrown by Molecular Beam Epitaxy on Gallium Ion Implanted Substrates

We describe the electrical properties of GaAs overgrown by molecular beam epitaxy on 100 kV Ga+ ion implanted substrates. Room-temperature carrier mobilities of the overgrown layers maintain good values for Ga doses up to 1014/cm2. With increasing Ga dose, the conductances of the overgrown layers shows a significant reduction, which is attributed to carrier depletion caused by ionized deep acceptors in the Ga-implanted layer. This effect can be almost entirely screened out when GaAs layers are overgrown directly on Ga-implanted semi-insulating substrates.