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Hole Mobility Characteristics under Electrical Stress for Surface-Channel Germanium Transistors with High-κ Gate Stack

This paper describes device degradation and mobility characteristics for germanium (Ge)-channel p-type metal–oxide–semiconductor field-effect transistors (pMOSFETs) with HfO2 gate dielectrics. In order to understand the effect of trapped charges in high permittivity (high-κ) gate dielectric and interface-trap states, we compare the hole mobility of the SiGe/SiO2/Si (SGOI) structure before and after applying an electrical stress. It is found that hot-carrier injection (HCI) and constant–voltage Fowler–Nordheim (F–N) stress cause mobility degradation in different mechanism. Even a negative-biased moderate F–N stress will give recovery of hole mobility. These results indicate that the device performance of a surface-channel SGOI device is easily affected by the specific trapped-charge state in high-κ dielectrics and interface traps.