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Effect of shallow and deep donors on the equilibrium electron density of the two-dimensional electron gas in a modulation-doped field-effect transistor

A model to calculate the equilibrium electron density of the two-dimensional electron gas in a modulation-doped field-effect transistor that takes into account the simultaneous presence of both shallow and deep donors in the Si-doped AlGaAs is presented. The results of our calculation are compared with earlier theoretical and experimental results.