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Characterization and analysis of OFET devices based on TCAD simulations

Omega-field-effect transistor (OFET) devices, which feature an undoped cylindrical channel uniformly surrounded by a gate electrode, are investigated in this paper. The study is based on TCAD device simulations of OFETs with gate lengths ranging between 10 and 130 nm and radii ranging between 1 and 65 nm. Device characteristics such as the threshold voltage, the subthreshold swing, the drain saturation, and leakage current as well as drain-induced barrier lowering are discussed as functions of radii and gate lengths. Further, the influence of transversal and longitudinal size quantization effects in OFETs are investigated.