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Giant Magnetoresistanc of Dual Spin-Valves Using Antiferromagnetic α-Fe2O3 as a Pinning Layer

We report the large magnetoresitance (MR) ratio of a dual spin-valve structure in α-Fe2O3(50 nm)/Co/Cu/Co/Cu/Co/α-Fe2O3(50 nm) films using the insulating antiferromagnetic α-Fe2O3 as a pinning layer. The MR ratio of a dual spin-valve is obtained as 27.8%, the highest value ever reported. This large MR ratio may indicate that the specular reflection of the conduction electrons occurs at the metal/insulator (Co/α-Fe2O3) interfaces.