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Large magnetization modulation in ZnO-based memory devices with embedded graphene quantum dots.

Magnetization modulation in oxide-based resistive random-access memories facilitates their application in multifunctional memory devices and spintronics. However, the small magnetization modulation in oxide films hinders their practical applications. In this paper, we report a significant enhancement in the magnetization modulation of ZnO films upon embedding graphene quantum dots (GQDs). The magnetization-modulation ratio is greater than 500% in the ZnO-GQD hybrid films under applied biases of only 0.23/-0.20 V. This magnetization-modulation ratio is the highest value reported to date in pure or magnetic-ion-doped metal-oxide films. Further analyses indicate that the exchange of oxygen between the GQDs and ZnO, under a reversible electric field, plays an important role in enhancing the magnetization modulation. This work provides a new direction for the application of GQDs.