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Luminescent and scintillation properties of CsI:Tl films grown by the liquid phase epitaxy method

CsI:Tl films have been crystallized by the liquid phase epitaxy (LPE) method from CsI:Tl (0.3 mol.%) crystalline salt onto CsI substrates. The luminescent and scintillation properties of CsI:Tl films are systematically compared with the corresponding properties of CsI:Tl (0.3 and 0.03%) crystals grown from the melt. The luminescence of CsI:Tl films and CsI:Tl (0.03%) crystals in the bands peaked at 2.52 and 2.22 eV is related to the radiative relaxation from the weak‐off and strong‐off configurations of excitons localized around Tl+ ions, respectively. Apart from single Tl+ centers, in highly doped CsI:Tl (0.3%) crystals creation of Tl+ dimer centers occurs. These centers form the additional emission bands peaked at 2.42 and 1.98 eV related to the weak‐off and strong‐off configurations of excitons localized around Tl+ dimer centers. We found that the dominant mechanism of excitation of the strong‐off luminescence of localized excitons in CsI:Tl films and crystals is the charge‐transfer transition between I– anions and Tl+ ions in single and dimer centers.