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Defect Filtering in GaAs on Si by Conformal Growth

Using a newly developed technique of conformal growth, we show that low defect density GaAs films can be obtained from MBE or MOVPE GaAs-coated Si heterostructures. The defect characterization of the conformally grown films has been carried out using transmission electron microscopy and chemical etching. For the first time dislocation densities below 105/cm2 have been observed in submicron GaAs films grown on Si by vapor phase epitaxy.