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Fabrication of a Cu2Sn1-xGexS3 thin film by the sol-gel sulfurization method

Cu2Sn1-xGexS3 (CTGS), which has characteristics suitable for the light absorption layer of single junction solar cells and is expected because an abundant and non-toxic element, was deposited by the sol-gel sulfurization method. The main peak of the sample sulfurized at 600 °C shifted by 0.44° to the higher angle side from Cu2SnS3 (200) (CTS). From the peak shift angle, the chemical composition ratio of Ge/(Sn+Ge) was estimated to be 0.57. From SEM and EPMA results, Sn was evaporated from the film surface at high temperature during a sulfurization process. Therefore, the film surface became Ge-rich. From the results of Raman spectrum observation, CTGS near the substrate contained graphite. The band gap energy inferred from the (ahν)2-plots was lower than the reported band gap energy of CTGS. The lower band gap energy was considered to be due to the lower graphite-rich layer.