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Characterization of humidity sensor based on nickel-MoS2-nickel

In this paper a humidity sensor based on MoS2 sheets is presented. MoS2 sheets are synthesized on Si/SiO2 substrate using chemical vapor deposition (CVD) method. Shadow mask is utilized in order to deposit Nickel on MoS2 sheets, resulting in formation of a Nickel-MoS2-Nickel, which acts as a Metal-Semiconductor-Metal (MSM) structure. Resistive transduction technique is used as the sensitivity analysis and a 494% sensitivity is achieved for 55% relative humidity (RH). Furthermore, response time and recovery time of the proposed device are 10s and 53s, respectively.