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Effects of inhomogeneous strain of quantum well structures on the band structure and gain

The effects of inhomogeneous strain on the band structure and TE mode gain were studied for low dimensional quantum systems. The analytical form of strain distribution was obtained by a variational method minimizing the elastic energy due to the intrinsic strain. Based on the effective mass theory with the use of propagation matrix method, the band structure and TE mode gain were computed. The inhomogeneous strain has direct relation with the x y dimension of the quantum well. When the x y dimension is small, the strain can be seen clearly as inhomogeneous. The results show that for the band structure and gain of quantum wires and dots, the inhomogeneous strain effects are important.