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A Method for Preparation of Site-Specific Multiple Samples of Semiconductor Material for Transmission Electron Microscopy

In recent years, the availability of focused ion beam (FIB) milling systems has given a much-needed boost for transmission electron microscopy (TEM) as a technique for site-specific analysis. Much progress has been made in the area of site-specific cross-sectional and planar TEM sample preparation techniques. However, a continuing need exists to reduce the sample preparation time, in order to improve TEM cycle time for better support of process development, yield improvement and production in a high-volume industrial environment. Thus, a faster TEM sample preparation technique is always desirable to meet this demand. A new approach to TEM sample preparation is described in this paper. Following the new approach developed in the present work, one can prepare on a single TEM grid at least two different cross-sectional samples of site-specific device structures or up to four different cross-sectional samples of blanket films. Two different samples, each containing an area of interest near the center, are cleaved or cut to a width of about 1.25 mm; these samples may be from two separate locations of a wafer, or from two different wafers where TEM analyses are required.