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Bolometric properties of reactively sputtered TiO2−x films for thermal infrared image sensors

A heat-sensitive layer (TiO2−x) was successfully deposited by RF reactive magnetron sputtering for infrared (IR) image sensors at different relative mass flow of oxygen gas (RO2) levels. The deposition rate was decreased with an increase in the percentage of RO2 from 3.4% to 3.7%. TiO2−x samples deposited at room temperature exhibited amorphous characteristics. Oxygen deficiency causes a change in the oxidation state and is assumed to decrease the Ti4+ component on the surfaces of TiO2−x films. The oxygen stoichiometry (x) in TiO2−x films decreased from 0.35 to 0.05 with increasing the RO2 level from 3.4% to 3.7%, respectively. In TiO2−x−test-patterned samples, the resistivity decreased with the temperature, confirming the typical semiconducting property. The bolometric properties of the resistivity, temperature coefficient of resistance (TCR), and the flicker (1/ f) noise parameter were determined at different x values in TiO2−x samples. The rate of TCR dependency with regard to the 1/ f noise parameter is a universal bolometric parameter (β), acting as the dynamic element in a bolometer. It is high when a sample has a relatively low resistivity (0.82 Ω·cm) and a lower 1/ f noise parameter (3.16   ×   10−12). The results of this study indicate that reactively sputtered TiO2−x is a viable bolometric material for uncooled IR image sensor devices.