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A Feasibility Study of 50 nm Resolution with Low Energy Electron Beam Proximity Projection Lithography

Patterns of 50 nm lines and spaces were demonstrated by low energy electron beam proximity lithography using 47-nm-thick poly methyl methacrylate (PMMA) and stencil masks fabricated by achromatic interference lithography (AIL). The result indicates the validity of the resolution analysis previously reported and the resolution capabilities of low energy electron beam proximity projection lithography (LEEPL) as a 50 nm node technology.