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Field enhancement factor : A self-validating method

A general method is presented for calculating the field enhancement factor of cylindrically symmetric high aspect ratio conductive structures. A discrete distribution of charges is used on the symmetry axis to replace the real charge distribution such that the electrostatic potential satisfies a set of boundary conditions. Their number will be set through a self-validating process. The method is exemplified for the geometric structure of a carbon nanotube and a conical tip, while the advantages are weighted against commonly used theoretical models.