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Electrical, optical and structural properties of binary phase free CuInSe2 thin films

Electrical, optical and structural properties of secondary phase free CuInSe2 thin films deposited on glass substrates are studied. The activation energy (EA) has been calculated for the films using the Arrhenius plot and the band gap energy (Eg) has been obtained from the optical transmission spectra. EA varied between 15 meV and 75 meV and Eg varied between 0.95 eV and 0.98 eV. Structural parameters a and c are calculated for the tetragonal phase. The mean grain size of the polycrystalline films is 0.1 µm.