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Design and Comparitive Analysis of Memristor and Magnetic Tunnel Junction (MTJ) based Non-Volatile SRAM Cell

Static Random Access Memories (SRAMs) are widely used in building caches and buffers. Reducing the power consumed by the memory with high Static Noise Margin (SNM) is advantageous for its usage in portable devices. The conventional 6T SRAM has high speed but it is volatile. In this paper Non-Volatile (NV) Magnetic Tunnel Junction (MTJ) based 8T SRAM is proposed. Non-Volatile SRAM with Memristor is implemented and the comparative analysis is carried out between Memristor and MTJ based NVSRAM. The power consumption has been reduced and SNM is increased in the proposed model. The proposed NVSRAM with MTJ has 12.14% reduction in power and 36.84% increase in SNM when compared to NVSRAM with Memristor. Power consumption of Memristor is more due to its resistive component. A single bit NVSRAM cell is simulated using the Cadence 180 nm technology.