{'fraction_non_alphanumeric': 0.04146730462519936, 'fraction_numerical': 0.02711323763955343, 'mean_word_length': 4.9245283018867925, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Characterization of defects in β-Ga2O3 single crystals

We have investigated defects in beta-type gallium oxide (β-Ga2O3) single crystals by X-ray topography, selective etching, and transmission electron microscopy. Two types of defects, namely, dislocations and nanopipes, were found. Dislocations are screw dislocations with Burgers vector parallel to [010]. The majority of them lie on and (001). Nanopipes are hollow pipes of 0.1 µm diameter and of at least 15 µm length elongated along [010]. No strain field was found around them. From the observation results, we have discussed the formation mechanisms of these defects.