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Advanced EELS Applications in Process Development

Electron energy‐loss spectroscopy (EELS) in the transmission and scanning transmission electron microscope ((S)TEM) has become an indispensable tool for structural characterization and analysis of microelectronic products at the highest spatial resolution available. However, the introduction of new processes and materials raises new challenges to high‐resolution physical analytics in semiconductor industry. In this paper, typical applications of advanced EELS techniques to ULSI device‐structure analysis are discussed.