{'fraction_non_alphanumeric': 0.03820816864295125, 'fraction_numerical': 0.02766798418972332, 'mean_word_length': 4.9375, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Paper No P22: A Study on the Characteristics of IZO‐TFTs with High‐k HfSiOx Gate Insulator Annealed in Various Conditions

In this work, we investigate the enhanced performance of IZO‐based TFTs with HfSiOx gate insulators. HfSiOx gate insulators, annealed at various conditions, are deposited by co‐sputtering of HfO2 and Si. The HfSiOx structural properties are investigated using AFM, XRD, and XPS techniques. Furthermore, the electrical characteristics are analyzed to investigate the effect of annealing conditions. We obtain optimal results for TFTs with HfSiOx gate insulators annealed for 1 h at 100°C, with a saturation mobility of 1.2 cm2/V·s, threshold voltage of 2.2 V, Ion/Ioff ratio of 2.0 × 106, and insulator surface roughness of 0.187 nm RMS.