{'fraction_non_alphanumeric': 0.023633677991137372, 'fraction_numerical': 0.01624815361890694, 'mean_word_length': 4.891304347826087, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Study the Effect of Annealing Treatment on the Properties of CdS Thin Films Grown by the Chemical Bath Deposition Method

The CdS material has been used in various applications due to its appropriate physical and chemical properties. The effect of different annealing temperatures and times on the material properties of CdS is studied in this investigation. Preferential orientation of (002), uniform and smooth films, slightly lower sulfur composition, high transmittance, and bandgap of 2.53 eV are found for CdS thin films before annealing. For annealed CdS samples, the intense peak of (110) with a crystallite size of around 20 nm is observed from the XRD results. The similar intensity of 1LO phonon mode located at 305 cm-1 for annealed CdS thin films also confirms the analogous crystallinity. Uniform, continuously distributed, well-connected and spherical grains are observed from SEM and AFM images. More symmetrical compositions of cadmium and sulfur atoms are noticed for annealed CdS samples. The optical bandgap for annealed CdS samples (i.e., from 2.47 to 2.52 eV) was slightly lower than the bandgap of CdS thin film before annealing treatment. All these obtained results are compatible with the hexagonal crystal structure of CdS thin films. Hence, the annealed CdS thin films can be utilized as a buffer layer in photovoltaic devices.