{'fraction_non_alphanumeric': 0.027586206896551724, 'fraction_numerical': 0.010344827586206896, 'mean_word_length': 4.81, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Improved Field Effect Mobility in Si-Face 4H-SiC MOSFETs with a Deposited SiNx Interface Layer

The SiO2/SiC interface quality has a significant effect on the performance of 4H-SiC MOS devices. The introduction of nitrogen to the SiO2/SiC interface is a well-known method for reducing the interface state density (Dit). In this study, we introduced nitrogen to the SiO2/SiC interface by forming SiNx films using atomic layer deposition (ALD) and thus improved the interface quality. O2 annealing with a SiNx interface layer of optimal thickness enhanced the field effect mobility.