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Optical and electronic properties of ZnO:P/n+-Si heterostructures fabricated by metalorganic chemical vapour deposition

ZnO:P/n+-Si heterostructures were fabricated on n+-Si substrates by metalorganic chemical vapour deposition. The substrates were heavily doped with phosphorus. The crystallinity and optical properties of ZnO films were characterized by photoluminescence spectra and x-ray diffraction, respectively. X-ray photoelectron spectroscopy (XPS) showed that phosphorus atoms existed in ZnO films. The current–voltage (I–V) curve showed current rectification characteristic behaviour.