{'fraction_non_alphanumeric': 0.018604651162790697, 'fraction_numerical': 0.0, 'mean_word_length': 5.591836734693878, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Optical properties of group-III nitride quantum wells and quantum boxes

We propose an overview of specific optical properties of quantum-size artificial structures made of group-III nitride semiconductors with natural wurtzite symmetry. We consider the cases of quantum wells and of quantum boxes obtained by the Stranski-Krastanov growth mode. We comment on results of continuous-wave and time-resolved optical spectroscopy, in comparison with our envelope-function calculations of excitonic energies and oscillator strengths. The influence on recombination dynamics of internal electric fields and carrier localization is discussed in detail.