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A two-dimensional numerical model of amorphous silicon thin-film transistors

Electrical characteristics of amorphous silicon thin-film transitors (a-Si TFTs) are strongly affected by trapped electrons in localized states in the energy gap. In this paper, we present a two-dimensional numerical model of amorphous silicon thin-film transistors including a trapped electron model. Use of an accurate localized state density distribution ensures high simulation accuracy. A compact model is derived that can describe crowding characteristics was derived based on the observation of simulation results.