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A novel interposer fabrication method for integration of bandpass filter applied in high frequency

The passive silicon interposer based 3D IC integration technology is a promising method to realize the integration of passive components and CMOS ICs. In this paper, a novel fabrication method for the 3D integration of bandpass filter is presented. A new through-silicon-vias transmission structure, which contains six shielding TSVs and one signal TSV, was applied in transmission structure to reduce the substrate loss. A bandpass filter working in the range of 8-12GHz was integrated with the interposer by means of wafer level Cu/Benzocyclobutene thin film process. The advantages and the potential application of the integration was discussed.