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Evaluation of Lateral Ni Diffusion in Si Nanowire Schottky Contact

Lateral Ni diffusion in Si Nanowire to form NiSi schottky contact was characterized by scanning electron microscope at temperatures range from 400 to 700°. Higher temperature annealing results in longer NiSi formation and the length of NiSi increases with the annealing time. The activation energy for NiSi formation on SiNWs are found to be 0.9 eV which is lower than bulk case. One-dimensional diffusion of Ni with SiNW might be the reason for lowering the activation energy.