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Increase in Zero-Field Conductivity and Low-Field Magnetoresistance by Proton Irradiated Defects in La0.67Sr0.33MnO3 Films

The effects of uniform structure defects produced by irradiation with 1.7 and 3 MeV protons on the electrical conductivity and low-field magnetoresistance (LFMR) of La0.67Sr0.33MnO3 (00l) films were investigated. The irradiation of heavy ions, such as Ar+ ions, usually creates defects, resulting in a decrease in the conductivity by defect scattering and an increase in the magnetoresistance by spin distortion. In the present study, the irradiation of light ions, such as protons, created low density point defects, resulting in structural and spin disorders, and an increase in the magnetoresistance. In contrast to the heavy-ion irradiation experiment, the conductivity markedly increased by more than two orders of magnitude.