{'fraction_non_alphanumeric': 0.023255813953488372, 'fraction_numerical': 0.006459948320413436, 'mean_word_length': 4.871212121212121, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Comprehensive study on charge trapping property of Si-containing hafnium-oxide polymorph

The electron-trapping property of Hf oxides with a wide range of Si contents (0–64 at. %) is studied as a charge storage layer of a nonvolatile memory. The largest flatband voltage shift in the MOS capacitor is obtained at a Si content of ∼20 at. %, which corresponds to the formation of a metastable crystalline phase such as a tetragonal or orthorhombic phase. First-principles calculation reveals that metastable phases tend to have a formation energy of oxygen vacancy lower than that of stable monoclinic ones. A schematic picture of traps in crystalline Hf oxides is provided. The metastable phase is also demonstrated to have retention characteristics superior to other phases.