{'fraction_non_alphanumeric': 0.0374331550802139, 'fraction_numerical': 0.020053475935828877, 'mean_word_length': 5.0894308943089435, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
The configurational energy gap between amorphous and crystalline silicon

The crystallization enthalpy of pure amorphous silicon (a‐Si) and hydrogenated a‐Si was measured by differential scanning calorimetry (DSC) for a large set of materials deposited from the vapour phase by different techniques. Although the values cover a wide range (200–480 J/g), the minimum value is common to all the deposition techniques used and close to the predicted minimum strain energy of relaxed a‐Si (240 ± 25 J/g). This result gives a reliable value for the configurational energy gap between a‐Si and crystalline silicon. An excess of enthalpy above this minimum value can be ascribed to coordination defects. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)