{'fraction_non_alphanumeric': 0.02464788732394366, 'fraction_numerical': 0.011737089201877934, 'mean_word_length': 4.763513513513513, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
EPR study of shallow and deep phosphorous centers in 6H-SiC

The phosphorus related defects in n-type 6H-SiC monocrystals doped by neutron transmutation have been studied by electron paramagnetic resonance (EPR) spectroscopy. After thermal annealing at 1900°C two sets of three phosphorous related EPR spectra are observed, which are attributed to the isolated shallow P donor on the two quasicubic (c1,c2) and the hexagonal (h) sites as well as to a deep P center on the c1, c2, h sites. The deep P center is tentatively attributed to the P S i -carbon vacancy complex. Our results show in agreement with theoretical predictions that the previous suggestions that the two types of centers are the ground and excited states of the isolated P donor can be ruled out. The donor-monovacancy complexes are characterized by an exceptional thermal stability.