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Mechanism for CF Polymer Film Deposition through Deep SiO2 Holes in Electron Cyclotron Resonance Plasma

The deposition rate of CF polymer film at the bottom of SiO2 microholes is measured and the mechanism is studied using a multichannel capillary array (MCA). Deposition rate increases as the angle of tilt in the hole decreases when rf bias is applied to the substrate. The smaller the diameter of the hole, the larger the increase in deposition rate. Pb from the MCA material was detected in film deposited through the MCA, and CF polymers deposited through the MCA are more carbon-rich than those deposited without the MCA. These results suggest that polymers reach the bottom of the hole by being etched off and redeposited on the sidewall. The increase in deposition rate at the bottom causes RIE (reactive ion etching) lag, thus it is important to maintain a perpendicular hole angle for holes with small diameters.