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Particularities of Scanning Electron Microscopy Operation Parameters for Textured Porous Silicon Diagnostics

There are many applications of structured silicon in micro- and nanoelectronics various research tasks. Recently, there is an interest in its application for thin-film solar cells. The parameters of formed structured silicon layer are crucial for such thin silicon solar cells performance. Hence, it is very important to control textured silicon layer parameters. One of the most powerful methods for structured silicon diagnostics is a scanning electron microscopy (SEM). SEM is an indispensable tool to study textured silicon structures albeit required careful operating parameters settings. The present work is dedicated to a detailed description of SEM operating parameters for obtaining information about formed microstructured silicon layer with a high resolution and sufficient depth of field.