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GROWTH MECHANISM AND SURFACE MODIFICATION OF NANOSTRUCTURED CeO 2 FILMS BY CHEMICAL SOLUTION DEPOSITION

The growth mechanism of 7-80 nm thick CeO2 nanometric epitaxial films, deposited on (001)-YSZ from 2,4-pentadionate solutions, has been investigated using x-ray diffraction (XRD), x-ray reflectivity (XRR), transmission electron microscopy (TEM), x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and reflection high energy electron diffraction (RHEED). The film thickness was tuned according to its linear dependence on solution concentration (0.08M-0.7M). The synthesis was performed under Ar/5%H2 at 750oC for 4h. The grain size, microstructure and surface evolution of the films has been investigated between 650oC and 1300oC in Ar/5%H2, air, and oxygen atmospheres.