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Fast exposure simulation for large circuit patterns in electron beam lithography

In this paper we discuss our method for simulating the exposure of circuit patterns with electron beam lithography. Our approach divides the exposure contribution at a point into two parts: global exposure, which considers circuit elements located far away from the point, and local exposure, which considers elements in close proximity to the point. Our method is significantly faster than using direct convolution, and is able to predict the result of the exposure with a high degree of accuracy. In this paper we will present our method in detail and analyse its performance through simulation and experimental results.