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Parallelism maps for optically contacted etalons.

A measurement technique is described that is capable of producing accurate numerical maps of the parallelism defect of optically contacted Fabry-Perot etalons. A photoelectric raster scan of the etalon transmission intensity distribution is performed at each of three closely spaced etalon tunings, one at maximum on-axis and two at the half-maxima on-axis positions. Simple data manipulation gives numerical or contour maps of the parallelism defect. Results demonstrating the effect of mechanical constraints on etalon parallelism are presented.