{'fraction_non_alphanumeric': 0.01969057665260197, 'fraction_numerical': 0.0, 'mean_word_length': 5.137931034482759, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Using nitrogen-vacancy defects in diamond as in-situ sensors of band bending

When one material is connected to another, charges near the interface can reorganize to lower the energy  of the system. The resulting space-dependent electrostatic potential near the interface alters the local  electronic band structure, a phenomenon known as ​band bending​. Band bending is an important concept  for understanding the charge transport properties of material interfaces and nanoelectronic devices. It is  central to the working of PN diodes, determines our ability to create Ohmic contacts between metals and  semiconductors, and causes electronic properties of surfaces to differ from those in the material’s bulk.