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Introducing photonic devices for 40Gbits/s wavelength division multiplexing transceivers on 300-mm SOI wafers using CMOS processes

We demonstrate the feasibility of producing advanced silicon photonic devices for future data communication nodes at 40Gbps using CMOS compatible processes in a 300mm wafer fab. Basic building blocks are shown together with various wavelength division multiplexing solutions. All the devices presented are integrated on 220nm SOI or locally grown epitaxial germanium.