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Effect of partial crystallisation on the photoconductive behaviour of amorphous thin films of Se75Te25

Steady-state and transient photoconductivity measurements have been made at different temperatures and intensities on the amorphous and partially crystallised films of Se75Te25 prepared by vacuum evaporation. Partial crystallisation is achieved by annealing the films at a particular temperature near the crystallisation temperature for different annealing times. The results indicate that the DC conductivity ( sigma DC) and photoconductivity ( sigma ph) increase but the photosensitivity ( sigma ph/ sigma d) decreases on partial crystallisation. The activation energy for DC conduction decreases while the activation energy for photoconduction remains unaffected on partial crystallisation. The transient photoconductivity behaviour is also affected quite appreciably on partial crystallisation. A peak in the rise of the photocurrent observed in amorphous films disappears in partially crystallised films. Moreover, the decay of the photocurrent becomes slower and slower as the extent of crystallisation continues to increase. The results are discussed in terms of the defect in the mobility gap of the present material.