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Single‐Crystal Statistical Field‐Effect Transistors

Field‐effect transistors (FET) are largely based on single crystals, amorphous films, or multiple (poly)crystalline layers. The single crystal that is known to exhibit the best performance in terms of mobility and stability is in fact only scarcely used in organic electronics, let alone in the context of low‐cost printing. Here a new FET design is presented, the statistical FET (SFET), which through a single additive step, requiring no alignment of the crystals with respect to the electrodes, can overcome the limitations imposed by the standard FET structure. This enables the use of crystal forming molecules in an additive manufacturing process, as printing is. This extra additive step can be utilized in passivating grain boundary related traps or dedoping. Several SFET onfigutrations are using several crystal forming molecules. This new structure may shift the synthetic effort toward crystal‐forming molecules.