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Exciton dipole orientation of strain-induced quantum emitters in WSe2.

Transition metal dichalcogenides are promising semiconductors to enable advances in photonics and electronics and have also been considered as a host for quantum emitters. Particularly, recent advances demonstrate site-controlled quantum emitters in WSe2 through controlled strain deformation of a monolayer material. Albeit essential for device integration, the dipole orientation of these strain-induced quantum emitters remains unknown. Here we employ back-focal plane scanning to experimentally determine the dipole orientation of strain-induced quantum emitters. It is found that with increasing local strain the quantum emitters in WSe2 undergo a transition from in-plane to out-of-plane dipole moment orientation if their emission wavelength is longer than 750 nm. In addition, the exciton g-factor remains with average values of g=8.52 ±1.2 largely unchanged in the entire emission wavelength regime from 720-800 nm. These findings provide experimental support of the recently proposed interlayer defect exciton model and highlight the importance of an underlying three-dimensional strain profile of deformed monolayer semiconductors, which is essential to optimize emitter-mode coupling in nanoplasmonics, for dipole-dipole coupling schemes, or for magnetic proximity-coupling.