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Low-resistance ohmic contacts to SiC nanowires and their applications to field-effect transistors

We report on the electrical characterization of two ohmic contacts (Ti/Au and Ni/Au) to unintentionally doped silicon carbide nanowires (SiCNWs) using the modified transmission line model (TLM) method. Our results indicate that subsequently deposited Ni/Au ohmic contacts on SiCNWs had ∼40 times lower specific contact resistances (SCRs) of 5.9 × 10−6 ± 8.8 × 10−6 Ω cm2 compared to the values of Ti/Au ohmic contacts (2.6 × 10−4 ± 3.4 × 10−4 Ω cm2). We also conducted a comparison study of the electrical characteristics of top-gated SiCNW field-effect transistors (FETs) with two different ohmic contacts as used for ohmic contact studies. The electrical transport measurements on the SiCNW FET with Ni/Au ohmic contacts show much lower resistance contacts to SiC NWs and better FET performances than those for Ti/Au ohmic contact-based FETs.