{'fraction_non_alphanumeric': 0.030638297872340424, 'fraction_numerical': 0.009361702127659575, 'mean_word_length': 4.70873786407767, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effects of Contact-Hole-Etching Damage on Aluminum Chemical Vapor Deposition

The effects of contact-hole-etching damage on aluminum (Al) chemical vapor deposition (CVD) have been investigated. When Si wafers were etched by reactive ion etching (RIE) under the conditions of contact hole etching, two kinds of damage were observed on the etched surface; i.e., an amorphized layer at a depth of 30 Å and a contaminated (carbon, oxygen, and fluorine) layer at a depth of 100 Å. Aluminum deposited on the as-etched wafer had granular structure and the grains were not connected with each other, which indicates that the growth of Al is suppressed by the damages. The effect of these damages was be removed by annealing at 1050°C or etching at a depth of 30 Å (slight etching). In both cases, the amorphized layer was disappeared by recrystallization or was removed by etching, but the contaminated layer still remained. Therefore, it is concluded that the nucleation of Al is suppressed by the amorphized layer, but not by the contaminated layer. When this slight etching is made after contact hole etching, perfect contact hole filling with Al can be achieved by selective CVD.