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Characterization of Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots by Using a Magnetic AFM Probe

We successfully fabricated Fe3Si-nanodots (NDs) on ultrathin SiO2 and evaluated their electron transport characteristics under magnetic field application by using atomic force microscopy (AFM) with a CoPtCr-coated cantilever. High density Fe3Si-NDs with an areal density as high as ~1011 cm-2 were formed on thermally grown SiO2 layer by exposing ultrathin Fe film on pre-grown Si-NDs to a remote hydrogen plasma without external heating. From local electron transport properties measured by the magnetic AFM tip, a clear change in resistance depending on the relative magnetization direction of Fe3Si-NDs with respect to the CoPtCr-coated AFM tip was confirmed at room temperature.