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Three-dimensional emerging nonvolatile memory for the high-density and neuromorphic applications

Resistive random access memory (RRAM) is one of the most promising emerging nonvolatile memory candidates for the future application as high-density memory and also for neuromorphic computing. Here, we show the fabrication of three-dimensional (3D) emerging RRAM devices based on the TiOx/Al2O3 bilayer design. The devices are showing good resistive switching performances after going through the initial forming process. All devices of the 3D stack are able to execute symmetrical switching behavior. Moreover, the devices are showing continuous synaptic characteristics based on the pulse dependent measurements. All of the observed phenomena are showing the possibility of using the TiOx/Al2O3 bilayer RRAM devices for the high-density and neuromorphic applications.