{'fraction_non_alphanumeric': 0.0201765447667087, 'fraction_numerical': 0.005674653215636823, 'mean_word_length': 5.19921875, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Numerical Study of the Recombination Profiles in CIGSe Thin Film Solar Cells Through Silvaco Atlas Simulator after using Experimental Parameters

Solar energy is one of the very promising renewable energy sources, which can provide tremendous energy for a long period. Besides, it is non-pollutant and available freely. Solar energy can replace the potential to replace the non-renewable energy source for energy production. Among the various generation of the photovoltaic (PV) technology, the CuInGaSe2 (CIGSe) is a thin film solar cell (TFSC) has attracted for transferring solar energy into the electrical energy. The recent focus on the CIGSe based TFSC is due to its material properties that can reduce the cost and improve the device performance. In this study, the high photovoltaic cell efficiency (PCE) of CIGSe TFSC is first optimized through the Silvaco Atlas simulator. A maximum PCE of 21.92 % is observed from the simulation. Then the device performance and recombination profiles are studied after replacing the experimental parameters of the CIGSe absorber layer. Afterward, a similar study is carried out after substituting the experimental parameters of CIGSe absorber layer and CdS buffer layer. The PCE of 15.01% is observed after replacing the experimental parameters of CIGSe and CdS with the optimized condition, which is lower than the optimized conditions showing the presence of recombination centers in the device. Hence, analyzing these simulated results can guide information about the best material parameters which contain fewer defects and good quality.