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Realization and characterization of manganese doped BST thin films for reflectarray applications

In the present work, Mn-doped Ba1-xSrxTiO3 (BST) thin films were realized by Chemical Solution Deposition (CSD) on alumina as the foreseen application for a reflect array needs integration of the ferroelectric on an insulating substrate. The optimum dopant rate to be inserted depending on the materials defect density, we have studied BST doping with a manganese content ranging from 0% to 2%. The dielectric and electrical characteristics were investigated as a function of the Mn content in the frequency range of 100 Hz to 5 GHz.