{'fraction_non_alphanumeric': 0.02074688796680498, 'fraction_numerical': 0.009681881051175657, 'mean_word_length': 5.188034188034188, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Electrical and Reliability Characteristics of Ultrathin Gate Oxide Prepared by Oxidation in D 2O

In this letter, we present a novel gate oxidation process using D2O (deuterium oxide) as an oxidizing gas. The electrical and reliability characteristics of ultrathin gate oxide grown in D2O ambient have been investigated. Compared with a control oxide grown in H2O, a oxide grown in D2O exhibits a significant reduction of charge trapping and interface state generation. Based on a secondary ion mass spectroscopy (SIMS) analysis, we found a deuterium rich-layer at the Si/SiO2 interface. The improvement of electrical and reliability characteristics can be explained by the deuterium incorporation at the Si/SiO2 interface.