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Reduction of switching time in ZnO nanoparticle-based reflective OASLM for holographic displays

Optically addressed spatial light modulator (OASLM) has attracted an increasing amount of attention due to its enormous potential in digital holography. Solution-processed ZnO nanoparticle (NP) is particularly promising in OASLM as a photosensor because ZnO NP-based OASLM can provide high resolution, large panel size, and economical production cost. However, it is still challenged by slow switching speed due to a long fall time (off time) and it takes tens of seconds for ZnO NP-based OASLM to switch off, which is limiting its application in dynamic digital holography. In this paper, the optimization in the fall time of ZnO NP-based OASLM is presented. The reduction in fall time was achieved by thermal annealing of ZnO NP, which decreases the effect of charge carrier trapping. Moreover, the fall time was further shortened by introducing a SiO2 layer between ZnO NP and liquid crystal layer so that the charge trapping at the interface is weakened. The shortest fall time of 0.99s was achieved in reflective OASLM, incorporating PEDOT:PSS-ZnO NP heterojunction. The heterojunction was also characterized in terms of IV characteristics and its barrier height was measured by CV measurement. The reduction of fall time discussed in this paper is valuable and it makes ZnO NP-based OASLM attractive for dynamic holographic displays.