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A full band Monte-Carlo study of carrier transport properties of InAlN lattice matched to GaN

The growing importance of In0:18Al0:82N stems from the fact that it can be grown lattice matched to GaN and for its potential applications in a large number of electronics and optoelectronics devices. In this work we employed a full band Monte-Carlo approach to study the carrier transport properties of this alloy. We have computed the temperature and doping dependent electron and hole mobilities and drift velocities. Furthermore, for both sets of transport coefficients we have developed a number of analytical expressions that can be easily incorporated in drift-diffusion type simulation codes.