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Change in the Parameters of Electron-Irradiated 4H-SiC Schottky Diodes as a Function of the Time during Low-Temperature Isothermal Annealing

In the present work, the kinetics of low-temperature annealing (400 °C) of 4H-SiC JBS diodes irradiated by electrons with an energy of 0.9 MeV and with a dose of 1E16 cm-2 was studied. The dynamics of changes in I-V, C-V characteristics, as well as DLTS spectra are shown. In the course of the work, a thermal cycling effect was discovered, i.e., effect of multiple rapid cooling to the temperature of liquid nitrogen and heating of the samples. As a result of thermal cycling, the barrier capacity increases and the on-resistance (Rs) decreases. In the DLTS spectrum, a level of - 0.38 eV appears, absent in the as-irradiated diodes.