{'fraction_non_alphanumeric': 0.029605263157894735, 'fraction_numerical': 0.003289473684210526, 'mean_word_length': 5.108433734939759, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Hole injection contribution to transport mechanisms in metal/p−/p++ and metal/oxide/p−/p++ diamond structures

Heterostructures such as Schottky diodes and metal/oxide/ semiconductor structures are the building blocks of diamond electronic devices. They are able to carry large current densities, up to several kA cm −2 , if a heavily boron‐doped layer (p ++ ) is included in the semiconducting stack, thus affording a metallic reservoir of mobile holes close to the lightly doped layer (p − ). In this work, hole injection effects are evidenced experimentally in the two previously mentioned devices and also simulated numerically. Although the potential barrier height at metal/semiconductor interfaces is a fundamental parameter, a more general approach consists in defining the current density from the product of an effective velocity and carrier concentration at interface. In accordance with experimental results, such a view permits to describe both depletion and accumulation regimes, which indeed can exist at the metallic or oxide interface, and to take into account the increase of the hole concentration above the thermal equilibrium one in the p − layer. The lower the temperature, the larger is this second effect. For sufficiently thin p − layers, typically below 2 μ m, this effect frees device operation from the limitation due to incomplete ionization of acceptors and allows a strong decrease of the specific resistance and forward losses while preserving breakdown voltages in the range of 1.4–2 kV.