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Sub-100-nm-Scale Patterning Using a Low-Energy Electron Beam

This study explores the feasibility of nanometer-scale patterning using a low-energy electron beam. Improved resolution results from low-energy electron beam generation by a retarding field optical column with a Zr/W Schottky electron (SE) source. The beam is focused to 17 nm with a current of 100 pA at an energy of 2 keV. The 2-keV electron beam is used to expose a 50-nm-thick poly(methylmethacrylate) (PMMA) resist on a Si substrate. A 95-nm line-and-space pattern can be produced by carefully controlling the exposure dose.