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Numerical Simulation of Backgating Suppression in High Electron Mobility Transistors (HEMTs) with a Low Temperature Molecular Beam Epitaxy (MBE)-Grown Gallium Arsenide Buffer Layer between the Substrate and Active Layers

Numerical simulations were carried out for a high electron mobility transistor (HEMT) in which the active device was separated from the hole-trap-rich substrate by a gallium arsenide buffer layer, grown by molecular beam epitaxy at low temperature, which contains the EL3 electron trap. The results show, for the first time, that the interface between the substrate and the buffer layer behaves like a reverse biased p-n junction when a negative backgate voltage is applied. By sustaining the backgate voltage across it, this junction effectively isolates the active channel of the HEMT from the substrate bias and thus eliminates backgating in the device.