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Charge States of DX Centers and Electronic Raman Scattering in n-Ga1-xAlxAs

The observation of the electronic Raman scattering in n-Ga1-xAlxAs (x > 0.45) is reported and the charge state of DX centers in III-V alloy semiconductors is discussed. The result shows clearly that the electronic Raman scattering in n-Ga1-xAlxAs of indirect band-gap and the persistent photoconductivity in n-Ga1-xAlxAs of direct band-gap are equivalent to each other. Both of them originate from the optical induced metastable state of donors in n-Ga1-xAlxAs (x > 0.22) at low temperatures. At higher temperatures, this hydrogen-like level is depopulated to the benefit of a stable DX-like deep state.