{'fraction_non_alphanumeric': 0.034444444444444444, 'fraction_numerical': 0.006666666666666667, 'mean_word_length': 4.596273291925466, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Error Suppression of Last-Programmed Word-Line for Real Usage of 3D-NAND Flash Memory

Blocks of 3D-NAND flash memory are programmed in order of WL. In real usage of 3D-NAND flash memory, a block contains both programmed WLs and not programmed WLs because the programmed data do not always fill the block. In the block, the last data are programmed at 'last-programmed WL' where the upper WL is not programmed. The last programmed data are supposed to have high reliability owing to shorter data-retention time. However, when upper WL is not programmed, BER of last-programmed WL largely increases because upper WL has less electrons and causes lateral charge migration. To suppress the errors at last-programmed word-line, this paper proposes Last-programmed Word-line Protection (LWLP). Proposed LWLP suppresses BER by 37% at last-programmed WL and extends data-retention time by more than 4 times.