{'fraction_non_alphanumeric': 0.02109181141439206, 'fraction_numerical': 0.009925558312655087, 'mean_word_length': 6.336363636363636, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Annealing effects on the optical properties of semiconducting boron carbide

Infrared vibrations of as-deposited and annealed semiconducting boron carbide thin films were investigated by midinfrared spectroscopic ellipsometry. The strong boron-hydrogen resonance at ∼2560 cm−1 in as-deposited films reveals considerable hydrogen incorporation during plasma-enhanced chemical vapor deposition. Extended annealing at 600 °C caused significant reduction in film thickness, substantial reduction of boron-hydrogen bond resonance absorption, and development of distinct blue-shifted boron-carbon and icosahedral vibration mode resonances. Our findings suggest that annealing results in substantial loss of hydrogen and in development of icosahedral structure, accompanied by strain relaxation and densification.