{'fraction_non_alphanumeric': 0.022181146025878003, 'fraction_numerical': 0.012939001848428836, 'mean_word_length': 5.050279329608938, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Influence of NH3-Plasma Pretreatment before Si3N4 Passivation Film Deposition on Current Collapse in AlGaN/GaN-HEMTs

In AlGaN/GaN high electron mobility transistors (HEMTs), Si 3 N 4 passivation film brings effective improvements in the current collapse phenomenon, however, the suppression of this phenomenon in a high voltage operation can not be achieved in only the Si 3 N 4 deposition process. In order to solve this problem, we have demonstrated an NH 3 -plasma surface pretreatment in the chamber of plasma enhanced chemical vapor deposition (PE-CVD) just before Si 3 N 4 deposition process. We found that the optimized NH 3 -plasma pretreatment could improve the current collapse as compared with only the Si 3 N 4 deposition and an excessive pretreatment made it worse adversely in AlGaN/GaN-HEMTs. It was confirmed by Auger electron spectroscopy (AES) analysis that the optimized NH 3 -plasma pretreatment decreased the carbon contamination such as hydrocarbon on the AlGaN surface and the excessive pretreatment degraded the stoicheiometric composition of AlGaN surface.