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Strained Single-Quantum-Well AlGaInP Laser Diodes with Asymmetric Waveguiding Structure

The strained single-quantum-well AlGaInP laser diodes reported here can operate at high output powers and high temperatures through the use of asymmetric waveguiding structures (AWS). By examining the dependence of the laser characteristics on the strain, we first determined the appropriate amount of the strain to be introduced in the active layer. Introducing the AWS into the strained single-quantum-well lasers then reduced their internal optical loss from 14.6 to 8.8 cm-1 by shifting the beam profile peak. In addition, the associated reduction of the optical absorption in the waveguide decreased the threshold current by about 30% and increased the maximum output power by about 50%. As a result, a 60 mW stable CW operation at a wavelength of 690 nm is attained at temperatures as high as 90°C.