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A method for forming self-aligned contact of semiconductor device

PURPOSE: A method for forming a self-aligned contact of a semiconductor device is provided to form smoothly a self-aligned contact by preventing an etch stop phenomenon. CONSTITUTION: A material layer is formed on a semiconductor substrate including a transistor. An interlayer dielectric(108) is formed on the material layer. A mask pattern is formed on the interlayer dielectric(108) to expose a part of an inactive region and an active region and form a T-shaped open region. The interlayer dielectric(108) and the material layer are etched by using the mask pattern. The mask pattern is removed. A conductive layer is formed on the interlayer dielectric(108). Two or more contact pads(112a,112b) are formed by etching and flattening the conductive layer and the interlayer dielectric(108).