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Novel MOSFET devices for RF circuits applications

In this paper, a novel Schottky tunneling source MOSFET utilizing the concept of gate controlled Schottky barrier tunneling has been examined and successfully demonstrated. Much better short channel immunity in terms of smaller DIBL, reduced threshold roll-off and increased output resistance has been confirmed. Excellent ROUT and gain as compared to conventional SOI-FET are demonstrated. To further improve the performance, smaller Schottky barrier height junction is preferred. Toward this end germanium based transistor is very attractive. Germanium channel devices are also explored for their enhanced transconductance performance. The development of GeOI substrates for control of SCE and reduction of parasitic resistance for improvement of ION is presented. These two devices are promising candidates for the system-on-chip applications