{'fraction_non_alphanumeric': 0.02577873254564984, 'fraction_numerical': 0.0, 'mean_word_length': 5.012903225806451, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Diffusion of amines from resist to BARC layer

In chemically amplified (CA) resist systems, photo-chemically generated acid can diffuse in resist matrix and the acid induces the de-protection reaction of resists. To control the rate of the de-protection reaction, small amounts of amines must be added as a quencher. The concentration of amines in resist matrix should be constant during the post-exposure-bake (PEB) treatment. In the practical resist processes, organic bottom anti-reflective coating (BARC) is essentially important to provide reflectivity control for resist patterning. In this study, we have studied the diffusion characteristics of amines from resist layer to BARC layer by bake treatment. The amine concentration in resist layer was estimated using the rate of de-protection reaction of conventional CA resist. It was found that the diffusion rate of amines from resist layer to BARC layer was negligibly low.