{'fraction_non_alphanumeric': 0.02690909090909091, 'fraction_numerical': 0.004363636363636364, 'mean_word_length': 5.745098039215686, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Spatial Anisotropy of Charge Transfer at Perfluoropentacene-Pentacene (001) Single-Crystal Interfaces and its Relevance for Thin Film Devices.

Archetypal donor-acceptor (D-A) interfaces composed of perfluoropentacene (PFP) and pentacene (PEN) are examined for charge transfer (CT) state formation and energetics as a function of their respective molecular configuration. To exclude morphological interference, our structural as well as highly sensitive differential reflectance spectroscopy studies were carried out on PFP thin films epitaxially grown on PEN(001) single-crystal facets. Whereas the experimental data supported by complementary theoretical calculations confirm the formation of a strong CT state in the case of a cofacial PFP-PEN stacking, CT formation is energetically less favorable and thus absent for the corresponding head-to-tail configuration as disclosed for the first time. In view of technological implementations, the knowledge gained on the single-crystal references is transferred to thin-film diodes composed of either stacked PFP/PEN bilayers or mixed PFP:PEN heterojunction interfaces. As demonstrated, their electronic and electroluminescent behavior can be consistently described by the absence or presence of interfacial CT states. Thus, our results hint at the thorough design of D-A interfaces to achieve the highest device performances.