{'fraction_non_alphanumeric': 0.0215633423180593, 'fraction_numerical': 0.0, 'mean_word_length': 5.35042735042735, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Simulation of thermal oxidation: a three-dimensional finite element approach

In this paper, a new numerical model for the three-dimensional simulation of thermal oxidation of silicon is presented. The model takes into account that the diffusion of oxidants, the chemical reaction, and the volume increase occur simultaneously in a so-called reactive layer. This reactive layer has a spatial finite width, in contrast to the sharp interface between silicon and silicon dioxide in the conventional formulation. The oxidation process is numerically described with a coupled system of equations for reaction, diffusion, and displacement. In order to solve the numerical formulation of the oxidation process, the finite element scheme is applied.