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CMOS image sensor with effective charge transfer

PURPOSE: A CMOS(Complementary Metal Oxide Semiconductor) image sensor for improving charge transfer efficiency is provided to be capable of improving the image and noise characteristics of the image sensor in low illumination condition by conserving potential difference between both edge portions of a transfer transistor gate region. CONSTITUTION: A CMOS image sensor is provided with a photo-diode region, a transfer transistor, and a floating diffusion region(44). The potential of the first edge portion of a transfer transistor gate region is higher than that of the second edge portion of the transfer transistor gate region, wherein the first edge portion is adjacent to the floating diffusion region(44) and the second edge portion is adjacent to the photo-diode region. Preferably, an N-type impurity region(45) is formed at the first edge portion and a P-type impurity region is formed at the second edge portion.