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High-temperature evolution of diamond-SiC composites

Diamond-SiC composites are attractive for improving the catastrophic fracture
 behaviour of SiC. However, fundamental knowledge is missing about the
 structure of this system and the mechanism of diamond graphitization. We
 used spark plasma sintering to study the diamond-Si-SiC system between 1600
 and 2000?C in the function of nanocrystalline (ND) and microcrystalline
 (MD) diamond addition as well as the quantity of Sibonding phase. Increasing
 sintering temperature induces intense graphitization and formation of
 nano-onions, few-layered graphene and well-ordered graphite in the prepared
 composites at elevated temperature. High resolution transmission electron
 microscopy study demonstrates the occurrence of the previously erroneously
 identified 5H-SiC polytype in the samples prepared at 2000?C. Regardless of
 Si and diamond contents, SiC formation is not confirmed even at high
 temperature.