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Thermo-drift analysis and bias compensation of the gain of APD

According to the randomness of multiplication of the carrier for the avalanche photodiode (APD), a mathematic model of the false alarm ratio (FAR) and the multiplication factor of APD were established based on the statistics. Through monitoring FAR for avalanche noise, the curve between bias voltage and temperature characteristic and the temperature coefficient of breakdown voltage have been obtained. The experiment shows that false alarm method not only can gain the breakdown voltage of APD in different temperature accurately, but also can determine the degree of avalanche breakdown. The temperature compensating circuit designed for the bias of APD can guarantee the normal operating of APD in a large variation of temperature, it is suitable for the photoelectric system that the high-frequency continuous signal detect.