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Micro-Raman spectroscopy and analysis of near-surface stresses in silicon around through-silicon vias for three-dimensional interconnects

Three-dimensional integration with through-silicon vias (TSVs) has emerged as an effective solution to overcome the wiring limit imposed on device density and performance. However, thermal stresses induced in TSV structures raise serious thermomechanical reliability concerns. In this paper, we analyze the near-surface stress distribution in a TSV structure based on a semi-analytic approach and finite element method, in comparison with micro-Raman measurements. In particular, the depth dependence of the stress distribution and the effect of elastic anisotropy of Si are illustrated to properly interpret the Raman data. The effects of the surface oxide layer and metal plasticity of the via material on the stress and Raman measurements are discussed. The near-surface stress characteristics revealed by the modeling and Raman measurements are important for design of TSV structures and device integration.Three-dimensional integration with through-silicon vias (TSVs) has emerged as an effective solution to overcome the wiring limit imposed on device density and performance. However, thermal stresses induced in TSV structures raise serious thermomechanical reliability concerns. In this paper, we analyze the near-surface stress distribution in a TSV structure based on a semi-analytic approach and finite element method, in comparison with micro-Raman measurements. In particular, the depth dependence of the stress distribution and the effect of elastic anisotropy of Si are illustrated to properly interpret the Raman data. The effects of the surface oxide layer and metal plasticity of the via material on the stress and Raman measurements are discussed. The near-surface stress characteristics revealed by the modeling and Raman measurements are important for design of TSV structures and device integration.