{'fraction_non_alphanumeric': 0.04333694474539545, 'fraction_numerical': 0.013001083423618635, 'mean_word_length': 4.961290322580645, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
GaN-on-Si switched mode RF power amplifiers for non-constant envelope signals

This work implements three discrete switched mode power amplifier (PA) topologies, namely inverse class-D (CMCD), push-pull class-E and inverse push-pull class-E, in a GaN-on-Si process for medium power level (5–10W) femto/pico-cells base-station applications. The designs are analyzed and compared with respect to non-idealities such as bond-wire effects and input signal duty cycle variation. These architectures are designed for non-constant envelope inputs in the form of digitally modulated signals such as RFPWM, which undergoes duty cycle variation. After comparing the three topologies, this work concludes that an inverse push-pull class-E architecture gives highest output power and efficiency for GaN-based discrete power amplifiers. This inverse class-E PA achieves 61.5% drain efficiency at 37.7dBm output power in the 880MHz band.