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Performance enhancement of gate-annealed AlGaN/GaN HEMTs

The electrical performances of unannealed and post gate-annealed AlGaN/GaN High Electron Mobility Transistors (HEMTs) were analyzed. A considerable improvement in HEMT parameters such as the drain source current (Ids), transconductance (gm), gate reverse leakage current (Ir) and off-state breakdown voltage (Vboff) were observed in optimally post gate-annealed HEMT devices. The improvement in the device parameters was correlated with the combined effects of an improved electron mobility and the removal of interface inhomogenity in the gated region as a result of gate annealing. The gate-annealed HEMTs, thus, delivered an output power of 5 W/mm at the S and the C bands.