{'fraction_non_alphanumeric': 0.022388059701492536, 'fraction_numerical': 0.016960651289009497, 'mean_word_length': 5.6441441441441444, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Ultrafast electronic processes in CVD diamonds and GaAs: picosecond photoconductivity and high-voltage switching

An 'electrode-free' transient photoconductivity technique was applied to investigate excitation, drift and recombination of non-equilibrium free charge carriers in high quality synthetic polycrystalline diamond films, natural diamond crystals and low-conductive GaAs with a time resolution better than 200 ps. Picosecond laser pulses of UV, visible and Ir spectral range were applied for single- photon excitation of free charge carriers with initial concentrations of (1012-1019) cm-3. Dependences of amplitude and duration of photocurrent on laser intensity/carrier density were measured. Lifetimes, drift mobilities and carrier photoexcitation cross sections as a function of electron concentration were estimated. Computer calculations of conduction and displacement currents, induced space charge and electric field spatial distribution have been performed for the real experimental conditions. Based on the obtained results, high voltage diamond-based switches triggered by ultra-short laser pulses have been designed. Special attention was paid to metal- dielectric interface investigation and ohmic contacts formation. The developed diamond-base module permitted to switch electric fields as high as 100 kV/cm within a time interval less than 200 ps. The amplitude of photocurrent reached 100 A and the electrical resistance reduce by a factor of 1010.