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Simulation for the Microcrystalline Silicon Thin Film Transistors by Considering the Change of Acceptor-Like State and Microcrystal Grain Size Effect

A numerical simulation to predict and analyze the characteristics of microcrystalline silicon thin-film transistors have been proposed. This model is derived from the Poisson's equation, with the consideration of the effect of microcrystal grain size. The microcrystalline silicon acceptor-like state characteristic energies are modified by the change of energy gap. This proposed model conforms fairly well with the experimental data.