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Thermoelectric and Electrical Properties of Si-doped InSb Thin Films

We studied the thermoelectric and electrical properties of Si-doped InSb thin films grown by Metalorganic Chemical Vapor Deposition. Their thermoelectric properties were evaluated using power factor (Pf =α/ρ), which is an important criterion, and a value of 10 W/mK is standard for practical use. Maximum value of power factor was 3.05×10 W/mK at 1.56×10mol/min for Si flow rate dependence. Power factor of wholly Si-doped InSb thin film was 5.45×10 W/mK, and power factor of partially Si-doped InSb thin film was 5.45×10 W/mK. Si-doping may strongly influence the interface between InSb and substrate, and defects in the InSb layer near the interface could be decreased by Si doping.