{'fraction_non_alphanumeric': 0.024390243902439025, 'fraction_numerical': 0.0066518847006651885, 'mean_word_length': 5.108108108108108, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Transconductance compression in submicrometer GaAs MESFET's

The transconductance compression phenomenon in GaAs MESFET's is known to depend on the gate metal, processing, and the gate length. This phenomenon is thought to be caused by the depletion region under the free surface between gate and drain. Based on this assumption, a new model is proposed which is able to explain the experimental results for 0.25-µm gate-length devices satisfactorily.