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Mechanism of Radiation Damage in SiO2/Si Induced by vuv Photons

The generation yield (Rf) of effective positive charges at an SiO2/Si interface, induced by a vacuum ultraviolet (vuv) photon, is measured as a function of the substrate temperature by a low-temperature microwave plasma etching apparatus. The Rf decreases monotonously with decreasing temperatures from 300 K down to 120 K. The model is verified by analyzing the experimental results according to the effective positive charge generation model previously proposed. From this analysis, it is proposed that an ultra low-damage plasma process becomes possible by eliminating the holes generated by the vuv photons from the SiO2 film keeping the specimens at low temperatures.