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Study of Heterogeneous Structure in GaAs1-xPx by Anodization-Electroreflectance Technique

A newly combined technique of the successive anodization-layer removal of the oxide and the electrolytic electroreflectance (ER) measured under the low-field condition (Anodization-Electroreflectance technique: AE technique) is described. The alloy composition profile of the graded band-gap region in GaAs1-xPx, epi-wafer is determined with the use of this technique. It is found that the alloy composition x varies almost linearly from the GaAs0.63P0.37 epi-layer to the GaAs substrate. Necessary data for the determination of the profile, such as growth rate and consumption rate of the anodic oxide film as a function of x, and dependence of the energy band-gap at the E1 transition on x, are presented in this paper. The growth rate of the oxide grown on GaAS1-xPx is found to decrease linearly with x from 19.2 Å/V to 9.2 Å/V at the constant current density of 3.0 mA/cm2. The bowing parameter is determined to be 340±30 meV in the ER measurements.