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Simulation of the characteristics of 850-nm superluminescent diodes

A light output characteristic simulation was attempted in order to find the optimal structure for 850 nm band superluminescent diodes (SLDs). The simulation results for light output-injection current characteristics, spectral modulation and the relationship between length of excitation region and light output, agreed well with actual SLD characteristics. Using the simulation method, the relationships between SLD light output and cladding layer band gap and impurity concentration were calculated to give guidelines for the design of higher-performance SLDs. The light output characteristics for SLDs with bulk and MQW structure active layers were then compared to give guidelines for the selection of type of SLD by application.