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Thermal Conductivity of BeO-Doped SiC Ceramic at 5 to 1000 K

Thermal conductivity of a BeO-added SiC ceramic was measured using steady-state longitudinal heat flow and laser flash techniques. A significant change of the thermal conductivities between the ceramic and high-purity, single-crystal was not observed above 300 K, however was found below this temperature. Low conductivity of the ceramic at temperatures below 40 K is due to the presence of grain boundaries, since the conductivity decreased according to Klemens’s T 3 law, and the calculated phonon mean free path reaches the magnitude of the grain size.