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Influence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers

An exhaustive experimental study of the influence of C/Si ratio on voluntary incorporation of nitrogen (N) and aluminum (Al) in 4H-SiC thin films is presented. The films were grown by chemical vapor deposition (CVD) in a horizontal, hot wall CVD reactor on Si- and C-face substrates, under Si-rich and C-rich conditions. Under some conditions the observed variation of dopant incorporation with C/Si ratio could be clearly attributed to the site competition effects, while in several cases other mechanisms have to be taken into account.