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The present state of the art in high-power semiconductor devices

Since the mid-1990s, thyristors and GTO capacities have been increased, resulting from the use of 6-in floating zone (FZ) Si wafers (which were developed in 1993) and the integration of new technologies for wafer processing and design (also developed in the 1990s). As devices have become more capable, the next step in moving forward is to take these self-turnoff devices and bring higher performance to power electronics, thereby widening the application field.