{'fraction_non_alphanumeric': 0.0286144578313253, 'fraction_numerical': 0.024096385542168676, 'mean_word_length': 4.782608695652174, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Improved contact resistance of new developed silver paste on mono-crystalline silicon wafer with ultra-low doped emitter

This report presents a silver paste, containing new developed Te-glass, with improved contact resistance on mono-crystalline silicon wafer with ultra-low doped emitters. Its FF and efficiency increase 0.5 and 0.05% respectively. The paste's contact resistivity is around 2 mOhm cm2 on 110 Ohm/sq wafer. The efficiency of the paste is quite stable when firing peak temperature varies from 740 °C to 780 °C. The SEM image reveals that the better contact resistance of the paste is from direct contact between silicon wafer and silver electrode.