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Electrical Instability of Hydrogenated Amorphous Silicon Thin-Film Transistors for Active-Matrix Liquid-Crystal Displays

We investigated the threshold voltage shifts (ΔVT) of inverted-staggered hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) induced by steady-state (dc) and pulsed (ac) gate bias-temperature-stress (BTS) conditions. Our study showed that, for an equivalent effective-stress-time, ΔVT has an apparent pulse-width dependence under negative BTS conditions–the narrower the pulse width, the smaller the ΔVT. This gate-bias pulse-width dependence is explained by an effective-carrier-concentration model, which relates ΔVT for negative pulsed gate-bias stress to the concentration of mobile carriers accumulated in the conduction channel along the a-Si:H/gate insulator interface. In addition, our investigation of the methodology of a-Si:H TFT electrical reliability evaluation indicates that, instead of steady-state BTS, pulsed BTS should be used to build the database needed to extrapolate ΔVT induced by a long-term display operation. Using these experimental results, we have shown that a-Si:H TFTs have a satisfactory electrical reliability for a long-term active-matrix liquid-crystal display (AMLCD) operation.