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The Effect of Y₂O₃Addition on the Microstructur and Electrical Properties of Bi-Based ZnO Varistors

The microstructure and electrical properties of Bi-based ZnO varistors containing from 0.0 to 4.0mol% Y₂O₃ were investigated. With increasing Y₂O₃ content, the distribution of spinel phase decreased, where-as a Y-rich phase formed in the nodal point increased. As a result, this phase acted as a grain growth inhibitor which decreases the average grain size of range from 20.0 to 4.8um. As a Y₂O₃ content increases, the varistor voltage increased and the nonlinear exponent exhibited a tendency of decrease. AY₂O₃ content showing relatively good conduction characteristics was 1.0mol%, then the nonlinear exponent and the leakage current was 55.3, 0.66uA, respectively. Since the donor concentration decreased by Increasing Y2O3 content, Y₂O₃ showed a role of acceptor.