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Piezoelectric aluminum nitride resonator for oscillator

This work investigates properties of the Thin Film Elongation Acoustic Resonator (TFEAR) [1] operating at MHz frequencies in air. This resonator is composed of a piezoelectric layer of Aluminum Nitride (AlN) sandwiched between two aluminum electrodes (Al). TFEAR works in the extensional mode excited via AlN d31 piezoelectric coefficient. A 3D-finite element method analysis (FEM) using ANSYS® software has been performed to model static modal and harmonic behavior of the TFEAR. In order to consider insertion losses into the substrate, equivalent electrical models based on Modified Butterworth-Van Dyke (MBVD) circuit have been improved by adding extra dissipative elements. Thus, a whole model for the on-wafer characterization set-up is given, allowing for automatic de-embedding of the present TFEAR equivalent circuit. Quality factor Q as high as 2500 in air have been recorded with motional resistance lower than 400 Ω. A first oscillator based on a TFEAR resonator was also designed and tested.