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Amorphous Silicon and Carbon Nanotubes Layered Thin-Film Based Device for Temperature Sensing Application

This paper proposes an integrated layered doped and undoped amorphous silicon thin-film based temperature sensing device. Temperature sensing performance has been measured for thin film p-i-n (p-type- intrinsic-n-type) configuration-based diode. Linear dependency of voltage on the temperature for forward-biased diode at a constant bias current is demonstrated in the temperature range of 30 – 200 °C. Further, the same device has been introduced with double-walled carbon nanotubes (DWCNTs) to improve the linearity of the sensor. Comparative performance of two configurations p-i-n and p-i-n/DWCNTs for temperature sensing application has been studied. Moreover, this paper discussed the effect of the DWCNTs on the sensor parameters such as sensitivity, S and coefficient of determination, R2. The maximum sensitivity of the sensor, 22.34 mV/ °C for p-i-n configured device and 21.06 mV/°C for p-i-n/DWCNTs configuration in a biasing current range of 10– 60 mA have been found. We achieved a maximum value of the coefficient of determination equal to 0.99889 for a p-i-n configuration and 0.99922 for a p-i-n/DWCNTs configured device.