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Study of hole-blocking and electron-blocking layers in a InaS/GaAs multiple quantum-well solar cell

In this work, a GaAs-based quantum well solar cell with a 25-layer InAs/GaAs
 intermediate layer is simulated in Silvaco Atlas TCAD software. In order to
 reduce the recombination caused by the presence of the quantum layers and
 increase the absorption of photons, electron blocking layers (EBLs) and hole
 blocking layers (HBLs) have been added to the solar cell in an
 In0.5(Al0.7Ga0.3)0.5P semiconductor. The results show that the efficiency of
 the proposed solar cell increases 17.38% by obtaining impurity the thickness
 and doping of the EBL and HBL layers. It can be concluded that the use of
 the In0.5(Al0.7Ga 0.3)0.5P semiconductor with EBL and HBL layers decreases
 the open circuit voltage (Voc) caused in the quantum wells. The efficiency
 of the proposed solar cell with EBL and HBL layers was found to be 44.65%.