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Organic photoconductive film–stacked active pixel sensor pixel circuits using indium–tin–zinc-oxide thin-film transistors

In this study, we describe the signal readout capabilities of indium–tin–zinc-oxide (ITZO) thin-film transistor (TFT)-based active pixel sensor (APS) pixel circuits combined with organic photoconductive films (OPFs). A pixel circuit was fabricated with a size of 50 μm containing three ITZO TFTs having a channel length of 2 μm and a blue-sensitive OPF possessing excellent properties with an external quantum efficiency of ∼59% and a dark current density of <100 pA cm−2. Signal readout operation of the pixel circuits in accordance with irradiated light intensity was demonstrated, and sufficient response speeds within the line selection period, assuming a pixel number of 320 × 240 (QVGA) at 60 frames per second (∼69.4 μs), was also confirmed by fabricating pixel line arrays comprising 320 and 240 pixels. Our findings show that the miniaturized ITZO TFTs have potential for use in high-pixel-density TFT-based APS image sensors with improved imaging quality.