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Developing models of OMVPE growth from in situ X-ray measurements

This paper summarizes our recent X-ray scattering and X-ray spectroscopy experiments looking at the organometallic vapor phase homoepitaxial growth of GaAs. The measured composition profiles and growth rates agree well with predictions by Jensen and coworkers for our reactor. Evidence for the presence of a partially decomposed trimethylgallium layer on the surface during growth at 500/spl deg/C is presented. A schematic model of growth which includes the presence of this structurally ordered adsorbed layer is presented.