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On the Temperature Dependence of Radiationless Electron Transitions. II. The Morse Oscillator Model in case of an

Abstract In our previous work1 a formula is presented for the rate constant of a radiationless electronic transition as a function of temperature τ for the Morse oscillator model. The formula was derived for the particular case of a sufficiently small parameter . In the above formula v o = v (T = o), A is a constant, Δω = ω1 - ω1 where ω and to are vibrational frequencies in the higher and lower electronic states respectively, and α is a parameter of the Morse curve where re1 is analogous to re but refers to an excited electronic state. The expression for probability v(T) can be used to account for a number of experimental results on the temperature quenching of luminescence. However, the probability expression is valid for low values of only, and, besides, in practice the usual Arrhenius dependence of v(τ) is much more frequent than the one indicated by the expression. Therefore, it seems desirable to analyze the Morse oscillator model for a more or less arbitrary value of .