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Influence of Defect Segregation on the Electrical Properties of Nb-doped SrTiO3 Grain Boundary Layer

The influences of defect segregation on electrical properties were investigated for a single grain boundary layer in Nb-doped SrTiO3. The electrical properties were compared with those of a grain embedded with a platinum wire. On the basis of the current–voltage (I–V) characteristics, it was found that the grain boundary of Nb-doped SrTiO3 could be presented as a back-to-back double Schottky model. The segregation of defects, strontium vacancies, in grain boundary was suggested from the results of currnet–time (I–t) measurement, impedance spectroscopy, and capacitance–voltage (C–V) measurement. It was also postulated that the space charge originating from this defect segregation forms the potential barrier. The activation energy for conduction through a grain boundary changed with applied voltage from 1.60 eV to 0.97 eV.