{'fraction_non_alphanumeric': 0.022865853658536585, 'fraction_numerical': 0.0022865853658536584, 'mean_word_length': 5.3125, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Tailored ION/IOFF ratio of nanotube network transistors by pulsed breakdown

Random networks of single-wall carbon nanotube (CNTs) films have been used in small to medium-scale integrated circuits on flexible or transparent substrates. A key parameter for such devices is the ON/OFF ratio, which can be enhanced by geometric striping to reduce metallic percolative pathways in the film. In addition, electrical stress can also selectively remove metallic pathways from CNT bundles and CNT thin films. However, constant DC stress is prone to ultimately damage both metallic and semiconducting nanotubes, in part because of an unstable threshold voltage resulting from charge injection into the substrate. In this study, we used pulsed electrical breakdowns to investigate the effects of film density, high-temperature, and vacuum (10-5 Torr) ambient on electrical burnout of such CNT film devices. We show that under pulsed electrical stress, ultra-dense films fail without improvement in the ON/OFF ratio. The ratio of low density devices is enhanced to levels comparable with geometrically striped CNT thin films without the need for additional process steps. Furthermore, our findings suggest water-assisted oxidation is the dominant breakdown mechanism when electrically sorting CNTs under ambient conditions.