{'fraction_non_alphanumeric': 0.03505535055350553, 'fraction_numerical': 0.008302583025830259, 'mean_word_length': 5.823899371069182, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Surface characterization of quinhydrone–methanol and iodine–methanol passivated silicon substrates using X‐ray photoelectron spectroscopy

Hydrogen‐terminated silicon substrates were passivated with quinhydrone–methanol (QHY/ME) and iodine–methanol (I2/ME), and the chemical changes occurring at the surface were investigated using X‐ray photoelectron spectroscopy (XPS). The XPS surface studies demonstrate that QHY/ME passivation provides reduced oxidation, less carbon contamination, and a chemically inert surface. Electrical characterization also demonstrates higher minority carrier lifetimes of QHY/ME passivated substrates as compared to I2/ME passivated substrates. The quality of surface treatment was also characterized using the contact angle measurement, which confirms the presence of a hydrophobic organic layer on the surface after QHY/ME passivation. Si 2p XPS spectra of the QHY/ME, I2/ME samples, and H‐terminated silicon. With a peak at 102.9 eV for I2/ME, it is evident that it provides poor surface passivation than QHY/ME where no surface oxidation is observed.