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A Study on Thermally Induced Microdefects in Czochralski-Grown Silicon Crystals : Dependence on Annealing Temperature and Starting Materials

Thermally induced microdefects in Czochralski-grown (CZ) silicon crystals have been investigated by both TEM and IR absorption techniques. Dependence of the defect behavior on both the annealing temperature and the starting materials was studied. It was found that the defect nature varies with the temperature, and that the defect density increases exponentially with the decrease of the annealing temperature. The increase in density also has a strong correlation with the initial carbon concentration in the wafer. It is concluded that the oxygen precipitates are heterogeneously formed at sites which have certain correlation with carbon atoms.