{'fraction_non_alphanumeric': 0.017513134851138354, 'fraction_numerical': 0.0008756567425569177, 'mean_word_length': 5.494318181818182, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Simulation based analysis of a monolithically integrated fast and slow IGBT structure (U)

This paper presents an analysis of a monolithic integrated structure dedicated to improve the trade off between switching and conduction losses. This structure is achieved by connecting two IGBT in parallel. A fast IGBT is dedicated to the conduction mode and a slow IGBT for the switching operation. After a brief reminder of the device operating principle, physical simulations of a discrete association have been performed in order to carry out an analysis of the performance. So, the losses have been evaluated for different switching frequencies, duty cycles and IGBT configurations. Two strategies of simple gates drivers are also briefly described. First experimental results of an integrated structure are presented and compared to analytical simulation results. Furthermore, to gain an insight into the device internal carrier distribution during the two operating phases (conducting and switching operation), [2D] simulations were carried out. These last simulations explained the difference between the experimental and simulations results.