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High-temperature mobility of pure n-type InP epitaxial layers.

High-purity epitaxial n-type InP thin layers give usually a reduced room-temperature Hall mobility compared to both bulk material and theoretical expectations. This effect occurs despite high low-temperature mobility, and is interpreted as due to a residual deep-donor center which acts as a strong scatterer and provides the additional electronic excitation observed at high T. A binding energy of 160 meV is found to be consistent with both the free-electron concentration and the computed Hall mobility.