{'fraction_non_alphanumeric': 0.033647375504710635, 'fraction_numerical': 0.020188425302826378, 'mean_word_length': 6.018867924528302, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Photosensitive Structures of Conjugated Polymer - Porous Silicon

The photosensitive hybrid structures poly-3,4-ethylenedioxythiophene (PEDOT)– porous silicon (PS)–n-Si are fabricated. Current-voltage characteristics of the obtained structures are investigated. It is shown that PS surface modification by PEDOT conjugated polymer gives rise to the appearance of a pronounced rectifying effect on the current-voltage characteristics. Spectral characteristics of photoresponse in the 450–1100 nm wavelength range, its temperature dependence in the 125–325 K range, and energy characteristics of the hybrid photovoltaic structures are studied. We propose possible mechanisms of the photoelectric processes in the hybrid structures PEDOT–PS–n-Si.