{'fraction_non_alphanumeric': 0.02871410736579276, 'fraction_numerical': 0.01373283395755306, 'mean_word_length': 4.569444444444445, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Pseudo-Real Time Observation of the Dynamics of Phase Defect on Si(100) Surface

The dynamics of a phase defect (P-defect) on the Si(100) surface was studied for the first time by scanning tunneling microscopy in pseudo-real time below 10K, using the repeated-line-scan technique in which single line scans are repeated on the same path along a dimer row. In addition to the pair creation and annihilation of the P-defect, the effect of a step on the motion of the P-defect was clearly demonstrated. Since the local barrier height for the migration of the P-defect depends on the local environment such as strain and electronic structure due to the existence of defects or dopants, the obtained results also indicate that analysis of the P-defect is promising for local probing of the Si(100) surface.