{'fraction_non_alphanumeric': 0.027704485488126648, 'fraction_numerical': 0.009234828496042216, 'mean_word_length': 5.712389380530974, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Depletion Layer Built‐In Field at (1−100), (0001), and (000−1) GaN/Water Junction and Its Role in Semiconductor Nanowire Water Splitting

The nature of specific GaN plane/water interfaces under external bias and illumination can influence photoelectrolysis efficiency using GaN nanowires. Studies of Ga‐polar, N‐polar, and m‐plane GaN interfaces with deionized water allow determining differences between surfaces corresponding to different nanowire facets. They are investigated under external bias conditions to reveal the profile of Fermi level localization through analysis of Franz–Keldysh oscillations using electrolyte electroreflectance (EER) technique in a specially designed measurement chamber. Calculation of the potential barrier height is also possible. EER study shows differences between surface densities of states (SDOS) at distinct GaN planes. One broad SDOS is identified near the conduction band in case of ±c‐plane and related to Ga adatom reconstruction and β‐Ga2O3 presence at the GaN electrode. Two narrow SDOS singularities are found at the m‐plane one of which is localized near the middle of the bandgap and allows to generate approximately two times higher surface potential barrier than in case of polar surfaces at zero‐bias conditions. This suggests that n‐type GaN nanowires can enhance carrier separation at sidewalls and refine the oxygen evolution rate. Additionally, a voltage‐controlled hysteresis loop of Fermi level localization is detected at the Ga‐face GaN/water interface.