{'fraction_non_alphanumeric': 0.025547445255474453, 'fraction_numerical': 0.0, 'mean_word_length': 5.282442748091603, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Metal induced continuous grain polycrystalline silicon thin film transistors

Metal induced polycrystalline silicon (poly-Si) films composing of continuous zonal domain (CZD) have been obtained through pre-defined crystalline nucleation lines. The impact of glass substrate shrinking on subsequent alignment process is determined. The crystallization process is precisely controllable and the annealing time can be shorter than one hour. P-channel thin film transistors (TFTs) built on CZD poly-Si have high performance and high uniformity. In this paper, we also demonstrate the application of CZD TFT to fast addressing active matrix field sequential color (FSC) LCD. A prototype display panel has been fabricated. This panel also has a large aperture ratio. Excellent color purity and fast moving image can be obtained.