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3-D Analytical Model for Short-Channel Triple-Gate Junctionless MOSFETs

An analytical model for short-channel triple-gate junctionless MOSFETs in the full operation regimes has been presented based on the solution of 3-D Poisson's equation. A separation approach is developed to solve 3-D Poisson's equation, and the contribution of the fixed and mobile charges can be considered separately. Besides, a fitting parameter βf is introduced to characterize the coupling effect between the fixed and mobile charges. The proposed model considers the 3-D electrostatic effects, which play a significant role in the performance of scaled nonplanar devices. The electrostatic potential profile and dc current-voltage characteristics are in good agreement with Sentaurus numerical simulation results. In addition, shortchannel effects and the transconductance-to-current ratio are well described by this model.