{'fraction_non_alphanumeric': 0.023494860499265784, 'fraction_numerical': 0.005873715124816446, 'mean_word_length': 5.035398230088496, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Oxygen precipitation in carbon-doped silicon

The precipitation of oxygen in carbon-doped Czochralski-grown dislocation-free silicon has been studied using small-angle neutron scattering. The results are compared with those for undoped, boron-doped and antimony-doped silicon. The precipitation process is faster than that for undoped silicon with a larger number of smaller precipitates being formed after ageing for long times. The precipitation process is over in less than 24 h. The precipitation process appears to consist of the formation of separation precipitates of amorphous SiO2 and beta -SiC. For every two molecules of SiO2 precipitated, one molecule of SiC is formed.