{'fraction_non_alphanumeric': 0.05710955710955711, 'fraction_numerical': 0.030303030303030304, 'mean_word_length': 6.154166666666667, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Surface potential images of self‐assembled monolayers patterned by organosilanes: ab initio molecular orbital calculations

Self‐assembled monolayers (SAMs) with different function terminal groups were prepared on substrates of n‐type silicon by chemical vapour deposition (CVD) from n‐octadecyltrimethoxysilane (ODS: H3C(CH2)17Si(OCH3)3), heptadecafluoro‐1,1,2,2‐tetrahydro‐decyl‐1‐trimethoxysilane (FAS: F3C(CF2)7 (CH2)2Si(OCH3)3), n‐(6‐aminohexyl)aminopropyltrimethoxysilane (AHAPS: H2N(CH2)6NH(CH2)3 Si(OCH3)3) and 4‐(chloromethyl)phenyltrimethoxysilane [CMPS: H2ClC(C6H4)Si(OCH3)3]. The sample surfaces covered with ODS‐SAM were irradiated under a reduced pressure of 10 Pa with vacuum ultraviolet (VUV) light through a photomask. Then, the irradiated areas with the ODS‐SAM removed were covered with another SAM by CVD. Surface potential images of the patterned areas were measured by Kelvin probe force microscopy (KPFM) and explained by ab initio molecular orbital (MO) calculations. The KPFM measurements showed that the surface potential contrasts of the FAS‐, AHAPS‐ and CMPS‐SAMs against the ODS‐SAM were about −170, +50 and −30 mV, respectively. The surface potentials as a function of area occupied by a molecule were predicted using the respective dipole moments perpendicular to substrates, which were obtained by the ab initio MO calculations. The predicted surface potentials of the FAS‐, CMPS‐ and AHAPS‐SAMs approximately agreed with the measured values at areas of about 1.5, 1.6 and 0.6 nm2 per molecule. The ab initio MO calculations also showed differences in surface potentials appearing due to the differences in Fermi levels of the respective SAMs. Copyright © 2002 John Wiley & Sons, Ltd.