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Kinetic Monte Carlo simulations of amorphous thin‐film growth

Amorphous SiO2 and Nb2O5 thin‐film growth simulations are performed on the basis of a solid‐on‐solid model considering fluctuating effective atom binding energies. We show that by assuming laterally correlated random energy fluctuations, one can obtain effective growth exponents and overall film roughness in agreement with experimental results. The solid‐on‐solid model is solved by event‐based kinetic Monte Carlo simulations and the obtained results are compared to atomic force microscopy data. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)