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A novel Doping-less Bipolar Transistor with Schottky Collector

We propose a new device structure named as Doping-less Bipolar Transistor (DBT) with Schottky Collector in this paper. This DBT concept is suitable in overcoming doping issues such as dopant activation and high-thermal budgets, required for post ion-implantation of the base and the emitter regions of a bipolar device, which can create complications while integrating the bipolar process with the CMOS process. DBT has metal electrodes with different work-functions (ϕm, E < ϕSi and ϕm, B > ϕSi) [1], to induce (i) electrons for forming the emitter region and (ii) holes to form the base region. Due to the absence of doped regions, this device is immune to non-ideal effects such as band-gap narrowing and ionic scattering.