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Ti‐adsorption on Se‐prereacted GaAs (110) surfaces studied by SXPS

This study is embedded in the broader context of reactive metal overlayers and passivation on GaAs. High resolution synchrotron‐radiation photoemission experiments for Ti coverages on Se‐reacted GaAs (110) surfaces show that, contrary to clean Ti‐reacted GaAs (110) interface, there is no initial disruption (submonolayer reaction) of the surface involving both Ga and As atoms during early stage of interface formation. However, a delayed Ti involved reaction appears at a trigger coverage of about 1 ML involving only As atoms from the prereacted AsSe interface configuration continued by Stranski‐Krastanov growth mode. A second reacted phase starts to form two GaTi involved configurations replacing GaSe bonds near a Ti coverage of 4 ML. The preferential chemical trapping of Ti by Se atoms is associated with a smaller interface thickness very likely <10 ML instead of 50 ML in the case of clean Ti/GaAs (110) interface caused by mobile As atoms.