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Junction temperature estimation model of insulated gate bipolar transistor power module in three-phase inverter

This paper proposes a junction temperature estimation method for IGBT power module in three-phase inverter through coupling the temperature-corrected power loss calculation model and Foster thermal model. Considering the structural characteristics of IGBT, the loss calculation model is established with full study about the influence rule of temperature, gate resistance and other factors on the loss. The instantaneous power loss can be calculated and applied to the thermal model, through which the temperature on that thermo cycle can be obtained and fed back to the power loss calculation model for calculation of next cycle. The coupling of the two models is implemented in Matlab/Simulink. The simulation result shows the model can meet the requirement of engineering design, and compared with the manufacturer's calculation method, it is more versatile and can reflect the fluctuation of the temperature under different load conditions, which is more favorable for monitoring the health of the device.