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Planar junctions in silicon on oxide grown using lateral epitaxy by seeded solidification

Current-voltage characteristics of large planar junctions fabricated in silicon on oxide have been studied. These junctions have slightly higher reverse leakage currents and slightly lower breakdown voltages than similar junctions fabricated in bulk silicon. The electrical properties of the junctions are dependent on the regrowth parameters of the silicon films. Fairly uniform junction properties are obtained over the entire sample.