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Design and analysis of a novel quantum-MOS sense amplifier circuit

A novel quantum-MOS sense amplifier circuit consisting of resonant tunneling diodes (RTDs) as pull-up devices and NMOS transistors is discussed in this paper. Compared to the conventional sense amplifier circuits using CMOS technology, the proposed QMOS sense amplifier exhibits about 20% higher sensing speed. The cross-coupled QMOS latch, which is at the heart of the sense amplifier circuit, has metastable and unstable states which are closely related to the I-V characteristics of the RTDs. The stability analysis has been made by using phase-plot diagram and determining how RTD parameters relate to circuit speed. Robustness of the sense amplifier has been discussed.