{'fraction_non_alphanumeric': 0.04486251808972504, 'fraction_numerical': 0.023154848046309694, 'mean_word_length': 5.178571428571429, 'pattern_counts': {'":': 0, '<': 2, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Dispersion in the anisotropy of optical third-harmonic generation in silicon.

We present what are to our knowledge the first theoretical and experimental results for dispersion in the anisotropy (sigma) of chi?((3)) associated with optical third-harmonic generation in Si. The theory is based on a full empirical tight binding band-structure calculation, and the results agree well with our measurements for 0.72 microm < lambda < 1.9 microm. The calculated low-frequency limit of sigma agrees with measurements from the literature better than earlier calculations do. In addition, the dispersion in the relative phase of chi1212((3))/chi1111((3)) also shows good agreement with experiment.