{'fraction_non_alphanumeric': 0.034050179211469536, 'fraction_numerical': 0.0, 'mean_word_length': 5.901234567901234, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Determination of the switching criterion for metal/tunnel-oxide/N/P+silicon switching devices

An experimental study is presented which determines the switching criterion for metal/tunnel-oxide/n/p+devices. The D.C. characteristics obtained from isolated devices fabricated on two batches of substantially different substrates, but having identical tunnel-oxides, suggest that the switching current is almost completely determined by the characteristics of the tunnel-oxide. Physical arguments are presented which adequately explain the experimental results.