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Analysing the Functioning Mechanisms and Potential Improvements Concerning Graphene-Assisted Electro-Optical Modulators

Silicon photonics-based optical modulators embedded with graphene have been demonstrated operating in bandwidths ranging from 2.7 to 30 GHz. Such devices sport compact footprints (μm2 range, against todays mm2 areas) and demand low energy per bit values (sub-pJ range) for high-speed applications in the C-band of telecommunications (1550 nm). This paper contributes by examining the role that resistance and capacitance optimization play in increasing electro-optical bandwidth and reducing energy per bit consumption, as well as the limits concerning these improvements by approaching previously proposed architectures through updated resistance reduction techniques and a more realistic analysis regarding device’s capacitance.