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Interface analysis of epi-Si(111)/Y2O3/Pr2O3/Si(111) heterostructures

Strain engineering of thin epitaxial Si thin films on insulating oxide buffers is of special interest to boost charge carrier mobility for SOI technologies. The single crystalline Si(111)/Y2O3(111)/Pr2O3(111)/Si(111) heterostructure offers, in principle, the opportunity to grow strain-engineered epitaxial Si(111) layers, realizing compressed, fully relaxed, as well as tensile-strained Si films. The interface structures were precisely analyzed at the atomic scale through Cs-corrected STEM/EELS study.