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Research on broad-band high-gain klystrons of megawatt output power level

The Department of High-Power Microwave Device in Institute of Electronics, Academia Sinica (IEAS) has developed broad-band klystrons for more than 30 years. In the recent 10 years, various models of high-power broad-band klystron have been studied and manufacturing covering L- and S-band. Typical electrical parameters of these tubes are 1 MW for peak power and 10% for relative bandwidth (-1dB). Most of them have used in military radar systems. In this paper, we give overall consideration of the design of such tubes.