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Power scaling of GaSb-based semiconductor disk lasers for the 2.X µm wavelength range

In recent years, optically pumped semiconductor disk lasers (OPSDLs) have attracted increasing interest due to their capability of delivering simultaneously high output power and excellent beam quality [1]. Recently, the realization of high-performance OPSDLs based on the (AlGaIn)(AsSb) material system with emission wavelengths of 2 µm and above has been reported [2]. Such laser sources are of particular interest for applications requiring a high-brightness output beam such as long range sensing, medical therapy and diagnostics, optical free space communication, and directed infrared countermeasures. In this contribution we will present our results on different high-power GaSb-based OPSDLs emitting in the 1.9 – 2.8 µm wavelength range, with the emphasis on the power scaling capability of these long-wavelength laser by using the following different concepts: increasing the pumped area, using multiple gain chips and using in-well pumped structures.