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Fast relaxation of free carriers in compensated n- and p-type germanium

The relaxation of free holes and electrons in highly compensated germanium doped by gallium (p-Ge:Ga:Sb) and antimony (n-Ge:Sb:Ga) has been studied by a pump-probe experiment with the free-electron laser FELBE at the Helmholtz-Zentrum Dresden-Rossendorf. The relaxation times vary between 20 ps and 300 ps and depend on the incident THz intensity and compensation level. The relaxation times are about five times shorter than previously obtained for uncompensated n-Ge:Sb and p-Ge:Ga. The results support the development of fast photoconductive detectors in the THz frequency range.