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A Near-Infrared pin Photodetector of Strain-Enhanced Ge Layer Epitaxially Grown on a Bonded Si-on-Quartz Wafer

A strain-enhanced Ge layer is epitaxially grown on a bonded Si-on-quartz (SOQ) wafer and is applied to a near-infrared pin photodetector (PD) at a normal incidence. X-ray diffraction measurement reveals a tensile in-plane lattice strain of 0.33 ± 0.01% in Ge on SOQ, which is generated by the mismatch of the thermal expansion coefficients between the Ge layer and quartz substrate of SOQ. The strain is approximately two times higher than 0.14 ± 0.01% in Ge on an ordinary Si wafer. Resulting from a direct bandgap narrowing under the tensile strain, the fabricated pin PD of Ge on SOQ exhibits a responsivity enhanced in the C+L band (1.530 – 1.625 µm).