{'fraction_non_alphanumeric': 0.014431239388794566, 'fraction_numerical': 0.0, 'mean_word_length': 6.277777777777778, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 1, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Microscopic theory of the influence of dipole superparamagnetics (type >) on current flow in semiconductor layered structures (type GaSe, InSe)

A statistical approach to description of the charge carrier transfer processes in hybrid nanostructures taking into account electromagnetic fields is proposed using the method of the nonequilibrium statistical operator Zubarev. Generalized transfer equations are obtained, which describe non-Markov processes of charge transfer in the system taking into account magnetic and polarization processes under the influence of external and induced internal electromagnetic fields. Weakly nonequilibrium charge transfer processes in nanostructures are considered, and a nonequilibrium statistical operator is obtained, by means of which the magneto-diffusion transfer equations for electrons in layered nanostructures are obtained. A generalized Cattaneo-type diffusion equation in time fractional derivatives is obtained for electrons with a characteristic relaxation time and a generalized model is proposed that takes into account the complexity of relaxation electro-magnetic diffusion processes for electrons in layered nanostructures.