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Surface potential and field effect in structures with Ge-nanoclusters grown on Si(100) surface

The structures consisting of Ge-nanoclusters grown on silicon oxide layer are promising candidates for optoelectronics as well as for nonvolatile memory circuits . This is due to their infrared photoluminescent and photoconductive properties. Crystalline germanium nanoclusters (NCs) are grown by a molecular-beam epitaxy technique on chemically oxidized Si(100) surface at 700°C. It was shown that structures with Ge-nanoclusters, grown on silicon surface characterized by fluctuations of the electrostatic field, that determined of positive charge trapped by dimensional quantum states Ge nanoclusters and Ge-nanoclusters/Si interface traps. Field effect on lateral conductivity and photovoltage spectra in Ge-nanostructures were analized.