{'fraction_non_alphanumeric': 0.03756708407871199, 'fraction_numerical': 0.025044722719141325, 'mean_word_length': 5.222222222222222, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
An influence of oblique-angle sputtering on ZnO:Ga thin film properties

The oblique-angle sputtering of ZnO thin films doped by Ga (ZnO:Ga) with oblique-angle of 80° to the horizontal (target) plane was performed. It improved significantly their preferred crystalline (002) texture and columnar crystalline structure tilted of about 14° declination from the substrate normal, decreased their electrical resistivity down to value of 4.4 × 10-3 Ωcm and increased optical transparency up to 88 %. in comparison with films deposited perpendicularly to substrate.