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Extraction of Effective Carrier Velocity in RF MOSFETs

A more accurate method based on the actual inversion charge measurement in this paper is proposed to extract the effective carrier velocity in RF MOSFETs. This method uses the gate-drain intrinsic capacitance and gmb-gm relation to get the actual inversion charge at various Vds, and above parameters are obtained from S-parameters. This method gives more accurate result over the whole range of Vds, because it doesn't assume a linear approximation to obtain the inversion charge and it doesn't limit the range of applicable Vds