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Neutron irradiation-induced enhancement of electronic carrier transport in ZnO

Irradiation of ZnO single crystals by thermal neutrons with a dose up to 7×1017 cm−2 and subsequent annealing at 400 °C for 1 h leads to a significant increase in majority carrier mobility and concentration in this material, with the corresponding decrease of its sheet resistance. Additionally, cathodoluminescence spectra taken before and after neutron irradiation are consistent with the growing carrier lifetime. The observed effects are attributed to irradiation-induced formation of electrically active species of interstitial Zn and improvement of lattice crystallinity due to annealing.