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Synthesis of Co-doped ZnO diluted magnetic semiconductors thin films by nanocluster-beam technique at different flow rate of helium gas

Co-doped ZnO thin films were fabricated by nanocluster-beam technique with different flow rates of helium gas at 200, 100 and 50 sccm and its influence of different flow rates on the properties has been investigated. TEM and AFM images, XPS survey scan and UV absorbance spectra were carried out. Co-doped ZnO exhibited ferromagnetic at room temperature, and the saturation magnetization of films reduced from 16 to 9.4μemu as the increase of flow rats.