{'fraction_non_alphanumeric': 0.022304832713754646, 'fraction_numerical': 0.01858736059479554, 'mean_word_length': 5.341176470588235, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Epitaxial film silicon solar cells fabricated by hot wire chemical vapor deposition below 750°C

We report the fabrication of film c-Si solar cells on Si wafer templates by hot wire chemical vapor deposition. These devices, grown at glass-compatible temperatures below 750° C, demonstrate open-circuit voltages greater than 500 mV and efficiencies above 5%. Analysis of the device characteristics and quantum efficiency provides important information about the epitaxial c-Si absorber material quality as a function of growth temperature.