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A Combined Analytic and Numerical Method for Predicting Solid Layer Growth in a Static Melt Crystallizer

ABSTRACT The kinetics of crystallization limit the rate at which crystal growth can occur without incorporation of undesired impurity. If the rate of heat transfer exceeds the mass transfer rate of the impurity, the impurity can solidify, contaminating the product. One would like to specify a rate of crystallization and determine the temperature profile of the crystallizer wall that would prevent this result. Recently, we have developed a computational method for solving the problem in which the melt is fully stirred. In this article, we extend our research to the case in which the melt is static, which is more realistic and in line with industrial crystallization procedures.