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The influence of the sapphire substrate on the temperature dependence of the GaN bandgap

This paper analyses the influence of the sapphire substrate on stress in GaN epilayers in the temperature range between 4K and 600K. Removal of the substrate by a laser assisted liftoff technique allows, for the first time, to distinguish between stress and other material specific temperature dependencies. In contrast to the prevailing assumption in the literature, that the difference fin the thermal expansion coefficients is the main cause for stress it is found that the substrate has a rather small influence in the examined temperature range. The measured temperature dependence of stress is in contradiction to the published values for the thermal expansion coefficients for sapphire and GaN.