{'fraction_non_alphanumeric': 0.02375, 'fraction_numerical': 0.0025, 'mean_word_length': 5.068181818181818, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Characterization of a Ru-based ternary-oxide thin film for a diffusion barrier

Ruthenium-based ternary-oxide thin films were grown by using thermal atomic layer deposition. The films were grown by repeating super-cycles consisting of Ru and Al2O3 sub-cycles. X-ray diffraction showed that Ru ternary-oxide thin film had a nano crystalline structure. The chemical state in the oxide thin film was clearly investigated by using X-ray photoelectron spectroscopy, and the composition of the Ru based ternary oxide film was characterized by using secondary ion mass spectrometry (SIMS). The quantitative analysis of the thin oxide films by using SIMS was calibrated by using Rutherford backscattering spectrometry. Based on the results, effects of aluminum and oxygen incorporation into Ru are discussed.