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Novel, Effective and Cost-Efficient Method of Introducing Fluorine into Metal/Hf-based Gate Stack in MuGFET and Planar SOI Devices with Significant BTI Improvement

In this work, we propose a new, effective, and cost-efficient method of introducing fluorine into metal/Hf-based gate stack of planar and multi-gate devices (MuGFET), resulting in significant improvements in both NBTI and PBTI characteristics. The key advantage of this method is that it uses the SF6-based metal gate etch for F introduction, requiring no extra implantation steps. In addition to the significant BTI improvement with the novel method, we also demonstrate, for the first time, better Vth control and increased drive current on MuGFET devices.