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Homoepitaxial Growth of ZnTe by Horizontal Open-Tube Method

The vapor-phase epitaxy of ZnTe was carried out in H2, Ar and I2 gas ambients by the horizontal open-tube method. The depletion rate of the ZnTe source and the growth rate on (110), (111)A and (111)B ZnTe substrates are described here as functions of the carrier gas flow rates, and the molar ratios of I2 to H2 and of Ar to H2. The values of the depletion rate and the growth rate decreased in the following order: ZnTe–H2–I2≃ZnTe–H2>ZnTe–Ar and ZnTe–H2–I2\gtrsimZnTe–H2>ZnTe–Ar system, e.g., the depletion rates were 3.0, 3.0 and 2.4 mg/min, and the growth rates were 0.30, 0.24 and 0.18 µm/min respectively, when the source temperature was kept at 923°C, the substrate temperature at 862°C and the carrier flow rate at 100 ml/min. The surface pattern of the epitaxial layer was strongly influenced by the growth temperature and the surface orientation.