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A Solar-Blind -Ga O Nanowire Photodetector

The authors report the growth of -Ga O nanowires by heating the GaN–sapphire template and the fabrication of a -Ga O nanowire photodetector by depositing interdigitated contact electrodes. It was found that the average length and diameter of the -Ga O nanowires were around 10 m and 100 nm, respectively. It was also found that the fabricated photodetector was solar-blind with sharp cutoff at 255 nm. With an incident light wavelength of 255 nm and an applied bias of 10 V, it was found that measured responsivity of the photodetector was A W.