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Quantitative Determination of Chemical Composition of Multinary III/V Semiconductors With Sublattice Resolution Using Aberration Corrected HAADF-STEM

Methods to determine the actual chemical composition of a multinary material often require rather crude assumptions or the combination of several techniques e.g. high angle annular dark field (HAADF) imaging and strain state analysis in scanning transmission electron microscopy (STEM) [2]. Aberration corrected STEM under HAADF conditions facilitates atomic resolution imaging and therefore allows to visualize the individual sublattices. Here we choose GaP, GaAs and their ternary alloy Ga(PAs) as a model system to investigate the influence of the chemical composition on the HAADF intensity for each sublattice independently.