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Wafer emissivity correction using dual-color pyrometry

A novel dual color pyrometry method forcorrecting wafer-to-waferemissivity changes during rapid thermal
processing (RiP) is discussed. This new technique, using a system called TRAC (Temperature
Repeatability with Automatic Control) addresses a key issue affecting the reproducibility of RTP production
applications: accurate temperature measurement and control. The effect of this new emissivity correction
method on reproducibility ofrapid thermal oxidation (RTO) and ion implant rapid thermal activation (RTA)
of wafers with varying emissivities is presented.
The results demonstrate significant improvement oftemperature control and temperature repeatability from
wafer-to-wafer both for RTO and short RTA processes when in situ emissivity correction is applied.