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Dry processed, through‐wafer via holes for GaAs power devices

The fabrication of through‐wafer via holes in GaAs substrates by plasma etching and laser drilling is reported. Using a low pressure (15–20 mTorr), low dc bias (−150 V) Cl2/BCl3 discharge with Cl2‐to‐BCl3 ratios ≤0.2, we are able to produce narrow (≤30 μm) via holes. This enables the use of a higher density of vias in closer proximity to the active GaAs power devices than can be achieved with normal diameter (100–150 μm) holes. Microwave enhancement of the plasma density using an electron cyclotron resonance source increases the GaAs vertical and lateral etch rates and requires use of low Cl2‐to‐BCl3 ratios in order to retain the anisotropic nature of the vias. Multiple pass (∼100 per hole) drilling of vias with a Q‐switched Nd‐YAG frequency doubled (532 nm), 30 mW laser has also successfully produced through‐wafer connections. This provides a maskless, versatile method for producting vias customized for a particular wafer, but is less developed than plasma etching.