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Growth of semipolar InGaN quantum well structure using self-organized nano-masks on m-sapphire.

This paper reports the improved microstructural and optical properties of semipolar (11-22) InGaN quantum well (QW) structures grown on SiO2 nanorods formed by introducing self-organized masks. The crystal quality of GaN grown on SiO2 nanorods was significantly improved by the defect blocking mechanism. The cathodoluminescence (CL) intensity of regrown GaN on SiO2 nanorods increased approximately 9.5 times in comparison with that of the reference GaN, which is attributed to the defect reduction effect of the nanorods. Semipolar InGaN/GaN double QWs grown on SiO2 nanorod masks showed an approximately 80% increase in internal quantum efficiency (IQE) in relation to that of the reference GaN.