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Characterization of Ferroelectric Random Access Memory (FRAM) Storage Capacitors

Ferroelectric materials have unique properties including polarization hysteresis, high permittivity, and enhanced piezoelectric effects. These properties make ferroelectric materials good candidates for applications such as non-volatile memories, capacitors, and sensors. [1] Specifically, ferroelectric random access memory (FRAM) has gained attention over the past decade due to low power consumption and high read/write endurance when compared to flash non-volatile memory technologies. Most ferroelectric materials remain in a polarized state over a limited temperature range. As temperature increases, depolarization gradually occurs until a fully depolarized state is reached at the Curie temperature. Therefore, it is important to characterize the material structure and chemical state/composition of the FRAM data storage capacitors as their properties impact the long-term reliability of FRAM products. The most commonly used materials used in FRAM storage capacitors are lead-zirconium-titanate or Pb[Zr1xTix]O3 (PZT) and lead-free materials such as BaTiO3. [2] In this report, we investigate the reliability of FRAM storage capacitors embedded in a microcontroller using the Scanning Electron Microscope (SEM) imaging and Energy Dispersive X-ray Spectroscopy (EDXS) to determine the structure and the elemental composition of the ceramic storage capacitor.