{'fraction_non_alphanumeric': 0.022637795275590553, 'fraction_numerical': 0.02066929133858268, 'mean_word_length': 5.603896103896104, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Synthesis and Properties of Intergrown Bi4Ti3O12-SrBi4Ti4O15 Ferroelectric Thin Films by Chemical Solution Deposition

Ferroelectric Bi4Ti3O12-SrBi4Ti4O15 (BiT-SBTi)-based thin films have been prepared by chemical solution deposition. Homogeneous and stable precursor solutions were prepared by controlling the reaction of starting metalorganic compounds in a solution. BiT-SBTi precursor films crystallized in the desired intergrown BiT-SBTi single phase on Pt/TiOx/SiO2/Si substrates if several processing conditions were optimized. To improve the ferroelectric properties of resultant films, the effect of Nd substitution at Bi sites in BiT-SBTi on the crystallization, the surface morphology and the ferroelectric properties was examined. BiT-SBTi thin films with an optimum amount of Nd substitution exhibited ferroelectric properties and demonstrated a 2Pr value larger than 30 µC/cm2. The surface morphology of synthesized thin films was also improved by controlling the amount of Nd substitution in BiT-SBTi.