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A high power CMOS SP4T switch using a switched resonator for dual band applications

A novel dual-band CMOS SP4T switch with P1dB of higher than 31 dBm is designed to operate at 0.9 GHz and 1.8 GHz. In the Rx switch path, a carefully designed switched resonator is incorporated in order to block high RF signal power from the power amplifier at the Tx path as well as to maintain low insertion loss in the Rx mode simultaneously. In Tx switch devices, a body substrate tuning technique is applied to maintain high power delivery to antenna port. Extended simulation results demonstrate more than 31 dBm of P1dB at both low and high bands as well as 0.9 dB and 1.4 dB of insertion loss at 900 MHz and 1.9 GHz, respectively. To the best of our knowledge, the proposed RF switch shows the highest P1dB with a bulk CMOS based RF switch ever published. This paper also demonstrates the feasibilities of CMOS integration of RF front-end switch modules for modern wireless communication applications.