{'fraction_non_alphanumeric': 0.014005602240896359, 'fraction_numerical': 0.0, 'mean_word_length': 5.271929824561403, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A multi-level converter for high power-high frequency IPT systems

This paper presents a low cost MOSFET-IGBT multi-level converter that is suitable for high power and high frequency IPT systems. The proposed converter with reduced number of switches can be employed on the primary side of IPT systems to generate high track currents that are necessary for high power applications. Simulated results are presented under various operating conditions, investigating the performance of the converter in comparison to a typical H-bridge topology. Results clearly indicate that stress levels of switches are low and the proposed converter produces quality waveforms at reduced switching losses and harmonic distortions.