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Growth of ZnSe:N epilayers by pulsed laser ablation deposition

Epilayers of nitrogen doped ZnSe have been grown on GaAs(100) substrates by pulsed laser ablation deposition assisted by a nitrogen beam produced by a supersonic nozzle beam source. X-ray photoelectron spectroscopy (XPS) shows that the epilayers are composed of 83.8% Zn and Se, 10.4% N and 5.8% O, and other kinds of impurity are rare. XPS spectra of Zn(2p3/2 ) and N(1s) core levels indicate that doped nitrogen with an estimated concentration of over 1021 cm-3 exists in the as-grown epilayer. Atomic force microscopy indicates that the surface of an as-grown ZnSe epilayer on GaAs(100) is flat with roughness of about 1.2 nm, which is less than that of some good-quality metalorganic vapour phase epitaxy grown layers. X-ray diffraction results show that these ZnSe epilayers are a characteristic of single crystallinity.