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Modelling of the current-voltage characteristics of InAs/AlGaSb/GaSb double barrier diodes with interband resonant tunnelling

Previously we developed a model for InAs/AlSb/GaSb resonant tunnelling structures (RTSs) and investigated the mechanisms of peak and valley current in these diodes, which exhibit high values of peak-to-valley (P/V) current ratio. Good quantitative agreement with the experiment was achieved both for the values of peak and valley current density for the first time. Here we show that the P/V current ratio can be essentially enlarged by employing the AlGaSb material instead of AlSb. The calculated current-voltage (I-V) characteristic of the InAs/AlGaSb/GaSb RTSs with 30 and 20 A barriers and 65 A quantum well showed a P/V current ratio of about 800 at lattice temperature T = 77 K. This value is much greater than all known experimental values of P/V current ratio for RTSs until now.