{'fraction_non_alphanumeric': 0.024962178517397883, 'fraction_numerical': 0.0, 'mean_word_length': 5.648241206030151, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
An Improved Submodule Topology of MMC With Fault Blocking Capability Based On Reverse-Blocking Insulated Gate Bipolar Transistor

The missing capability of DC fault current limitation is an inherent disadvantage in the typical half-bridge modular multilevel converter (MMC), which restricts its application in long-distance high voltage direct current (HVDC) systems. The full-bridge submodule (FBSM) and clamped double submodule (CDSM) topologies allow for fault current self-clearing, but also suffer from additional hardware cost and power losses. In this paper, an improved submodule topology utilizing the new reverse-blocking insulated gate bipolar transistor (RB-IGBT) is proposed to improve system economy without compromising its performance. The operating principles and DC fault characteristics of the proposed topology are analyzed in details, including comparison with various topologies in terms of cost, losses, fault current clearing speed and thermal. Compared with the traditional CDSM topology, the proposed RBSM can clear DC faults faster with reduced cost of switching devices. A DC fault protection strategy for MMC-HVDC system is also presented. Simulation results under normal operating, permanent and transient fault conditions are carried out to verify the effectiveness of the proposed topology.