{'fraction_non_alphanumeric': 0.02596053997923157, 'fraction_numerical': 0.03115264797507788, 'mean_word_length': 4.878048780487805, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Electron Trapping Induced by High-Energy Ionizing Radiation in SiO2

Electron trapping by positively-charged centers and neutral centers induced in SiO2 by 1 MeV electron and gamma-ray (Co60) irradiation was studied by the avalanche injection technique. Two kinds of positively charged trap with cross sections of 2×10-13 and 3× 10-14 cm2 were identified. The effective density of these traps increased linearly with the total absorbed dose and with the 0.45 power of the total dose, respectively, suggesting that there is another origin of positively-charged traps besides trapped hole centers. Two neutral traps with cross sections of 6×10-16 and 6×10-17 cm2 were also identified, and the effective density of these traps was found to increase linearly with the total dose. Under a positive gate bias, this effective density was about twice that under a negative bias. Neutral trap generation is probably associated with the hole transport process in the oxide.