{'fraction_non_alphanumeric': 0.01228878648233487, 'fraction_numerical': 0.0015360983102918587, 'mean_word_length': 5.20952380952381, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Approaching the Ni percolation threshold by thin-film irradiation

We have reproduced a percolating structure in thin Ni films by an inhomogeneous sputtering process. The morphological disorder has been studied using TEM and ` in situ' transport measurements during ion irradiation. The fluence dependence of the resistance shows a singularity following a 2D percolation law. The formation of the hole structure is consistent with a Poisson mechanism. A computer simulation developed using a code based on a Poisson statistics allows us to account for the experimental values of the percolation threshold and the overall shape of the infinite cluster.