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GaN-based single phase brushless DC motor drive for high-speed applications

It is a well-known fact that wide-bandgap (WBG) materials such as gallium nitride (GaN) and silicon carbide (SiC) have superior characteristics compared to silicon (Si) in power electronics and motor drive applications. Performance of a single-phase brushless high-speed DC motor can be improved by using GaN-based drive since it requires high frequency operation and low conduction and switching losses. This paper discusses the implementation of GaN devices to drive a single-phase brushless DC motor. Control strategies and simulation analysis are presented. Comparison is carried out between GaN-based and Si-based brushless DC motor drive systems and the potential benefits of GaN-based drive system are quantified from the efficiency and loss perspective.