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Effect of H2 Carrier Gas on CVD Growth Rate for 4H-SiC Trench Filling

The effect of H2 carrier gas on the growth rate during the trench filling using CVD epitaxial growth was investigated in a wide pressure range (10∼38 kPa). It is found that, in the entire pressure range, reducing H2 flow rate can increase the filling rate (the growth rate inside trench) and the filling efficiency (the thickness ratio between epilayer on trench bottom and mesa top), which means a high productivity and a low risk of void defects. The filling rate and efficiency of ∼1.5 μm/h and ∼18 respectively was achieved at 38 kPa.