{'fraction_non_alphanumeric': 0.023006134969325152, 'fraction_numerical': 0.020705521472392636, 'mean_word_length': 4.878378378378378, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Non-thermal and transient thermal effects of burst 100 MHz sinusoidal electric fields on apoptotic activity in HeLa cells

This paper describes non-thermal and transient thermal effects of burst 100 MHz, 100 kV/m sinusoidal electric fields on the apoptotic activity in cultured HeLa cells. Two kinds of pulsing sequences, 50 0.2 ms-long pulses with 2 s intervals and a single 10 ms-long pulse, were used for the non-thermal and the superposition of transient thermal shock on the non-thermal loading, respectively. The externalization of phosphatidylserine as an indication of apoptosis activity and the membrane defect regarded as cell death were detected by using molecular probes annexin V-FITC and propidium iodide, respectively. As a result of the statistical analysis of approximately 4000 cells using a flow cytometer, most of the cells survives for at least 2 h after the exposure, and apoptotic cell number was gradually increased in the range of hours. The 10 ms-long pulsing, which causes the transient temperature change of 25°C, induced apoptosis to more HeLa cells than the non-thermal 0.2 ms-long pulsing. The superposition of the transient thermal shock on the non-thermal loading produced by the IBSEF pulsing can be a new biological stress to enhance the conventional nonthermal effect.