{'fraction_non_alphanumeric': 0.02391304347826087, 'fraction_numerical': 0.03695652173913044, 'mean_word_length': 5.1466666666666665, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Platinum in Silicon after Post-Implantation Annealing: From Experiments to Process and Device Simulations

Based on experimental findings of platinum clusters, a model of post-implantation annealing of platinum in silicon has been developed for the temperature range from 850 to 900 °C and the dose range from 1×1012 to 1×1013 cm−2. The model has been implemented in a full TCAD simulation chain to predict the electrical behaviour of platinum-diffused diodes.