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Defects in Electroplated Cu and Their Impact on Stress Migration Reliability Studied using Monoenergetic Positron Beams

Positron annihilation was used to probe vacancy-type defects in electroplated Cu fabricated using different electrolytes. Isochronal annealing experiments revealed that the agglomeration of vacancy-type defects in grains was observed below 200 °C and that their concentration started to decrease above 300 °C. The observed annealing stages of the defects agree with those for pure Cu irradiated with light particles such as electrons. The size and concentration of vacancies decreased with decreasing concentrations of residual impurities in Cu films. A decrease in the impurity concentration, however, increased the failure rate of Cu interconnects in a stress-induced voiding test. Thus, void formation related to stress-induced failure can be reduced through the introduction of vacancy clusters into grains.