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Measurement of the Surface Electrical Resistance of SnO2:F Thin Films

In this work, thin films of tin oxide doped with fluorine and of nominal surface resistance between 30 Ω and 40 Ω were deposited by RF sputtering in a plasma deposition system and their surface electrical resistances were evaluated for different conditions. To measure the resistivity of the fluorine-doped tin oxide film using an aluminum PAD with the same thickness and the same width as the film, a Minipa digital multimeter acting as an ammeter, a DC voltage source, and wires with banana-alligator connectors were used at six intervals (between the aluminum measuring tips and the PADs). Thus, a linear approximation and verification of the resistance value for each measured distance were undertaken. Resistances ranging from 44.10 Ω/ to 88.10 Ω/ for separations of 6 and 1 cm, respectively, were found. With the values obtained, the respective graphs were plotted for the six separations. The four-point method was employed to obtain four measurements (M1 to M4), and the curves of voltage as a function of the current were obtained. Values of resistance ranged from 11.4 Ω (M4) to 29.1 Ω (M3).