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Analysis of the unbalanced feeding effect on discrete device with large die size

This paper focuses on analyzing the unbalanced feeding effect on RF power transistors, which can be generated from the input and output transition structures when they are connected to a relatively large size die. Such an effect can cause degradation of device's RF performance. A TGF2023–10 transistor assembled inside a PowerBand™ package is used as an example to illustrate the effect. By modeling the input and output transition structures as one-port to multi-port transition networks, parameters based on the total difference of the transmission and reflection coefficients on the multi-port side are defined to quantify the unbalanced feeding effect.