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Detection of carbon-related bandgap states in GaN using deep level optical spectroscopy

We present the application of deep level optical spectroscopy (DLOS) to detect carbon-related shallow and deep traps in semi-insulating nitride layers. To charactrise GaN layers with an intentionally wide range of carbon incorporation, were made on atmospheric pressure (AP) and low pressure(LP). Secondary Ion Mass Spectroscopy (SIMS) was used to confirm that LP MOCVD GaN layers incorporated a significantly higher carbon concentration compared to AP MOCVD layers.