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Short-Circuit Turn OFF Capability of an Adaptive Open Loop Gate Driver for Insulated Gate Bipolar Transistors

This paper analyzes how a previously presented adaptive open loop gate driver handles fault currents. When controlling insulated gate bipolar transistors (IGBTs), it is essential to ensure safe operation in the whole operating range. Most important, the gate driver must be able to safely turn OFF a unacceptably high current like a short-circuit current. Such a fault generates a current of unknown magnitude, which has to be switched off as safe and slow as possible. A special shutdown mode of the investigated open loop gate driver is presented in this paper, which makes it possible to safely shut down a fault current without knowing the actual operating point of the IGBT. Based on measurement results it is shown that all currents, including desaturation of the IGBT can be safely turned OFF.