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Investigation of Method for Determining the Optical Parameters Based on the Measurement of Angles of Incidence

A method of determining the real and imaginary parts of the refractive index n(λ) and κ(λ) of thin layers in semiconductor heterostructures is proposed. The method is based on the measurement of angles on the two characteristic curves of the reflection from the sample formed from the substrate heterostructure grown on top of it, for p-polarized wave. The first characteristic angle θ₁ is an analogue of the Brewster angle, the second angle θ₂ corresponds to the inflection point of the curve. Measurements of θ₁ and θ₂ are carried out for two samples grown on GaAs. An algorithm for extraction from measurements the n (λ) and the κ (λ) of the quantum wells layers in heterostructures is proposed and tested