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Defect-Induced Surface Morphological Evolution in Epitaxial Germanium Growth on Silicon

In this work the evolution of surface morphologies during epitaxial germanium growth on silicon substrate is discussed. A distinctive surface protrusion feature is observed after a certain thickness of germanium is grown on silicon by thermal chemical vapor deposition. It is shown that the formation of these features can be attributed to the development of in-film defects that originate from the 4.2% lattice mismatch between germanium and silicon.