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Annealing Behavior of Defects Induced by Self-Implantation in Si

The morphology of amorphous/crystalline interfaces, regrowth of the amorphous layer and the annealing behavior of secondary defects during rapid thermal annealing for continuous and buried amorphous layers created by double and single self-implantations in Si wafers were investigated by cross-sectional transmission electron microscopy and Rutherford backscattering spectroscopy. In the case of single Si+-ion-implanted Si samples, there are numerous detached microcrystallites throughout the buried amorphous layer, and their density decreases substantially even with rapid thermal annealing at the temperature as low as 500° C. The most striking difference in the secondary defects after complete recovery between the buried and continuous amorphous layers is that zipper-shaped defects only form in the samples with a buried amorphous layer. Extended defects from the zipper dislocations at the middie of the regrown region in the buried amorphous layer act as sinks for point defects.