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X-Ray Diffraction from GaAs/AlAs/GaAs Grown on GaAs(001) by MBE

The structure of a GaAs/AlAs/GaAs multilayer grown on a GaAs(001) substrate by MBE was investigated by X-ray diffraction. The lattice spacing in such a single bunch of AlAs layers was found to expand along the epitaxial-growth direction due to a Poisson expansion. The lattice mismatch between GaAs and AlAs perpendicular to the growth direction is compensated.