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Electrooptical Study of an In-Plane Switching Mode Using a Uniaxial Medium Model

A new modeling method using a uniaxial medium model has been proposed to obtain a simple and quantitative expression for the transmittance of an in-plane switching (IPS) mode. In this model, the effective birefringence (Δneff) and the apparent optic axis rotation angle (φapp) are used instead of the original birefringence and the director profile, and Δneff changes when an electric field is applied to the IPS mode cell. The dependences of Δneff (measured as a retardation) and φapp on the applied voltage have been evaluated first by experiment. Δneff was reduced to 80% of the original value and φapp rotated 45° at the maximum transmittance (Tmax). It has been confirmed that the transmittance can be reproduced satisfactorily by employing the model's expression using the observed Δneff and φapp values. Theoretical simulation has also been executed and the results supported the experimental results. The simulation has also shown that both the Δneff–Δn ratio and φapp at Tmax are almost constant and do not depend on either the cell gap or liquid-crystal properties. Tmax can be easily calculated using the uniaxial medium model.