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The Effect of Reduction of Dislocation Density on the Lattice Distortions in Undoped GaAs Single Crystal Grown by LEC Method

Distributions were mapped of lattice inclination and lattice spacing in (001) undoped GaAs crystals using synchrotron plane wave X-ray topography. For a high dislocation density GaAs wafer, degree of lattice inclination is larger (Δθ≃±40 seconds) than that for a low dislocation density wafer (±5 seconds), whereas the variation of lattice spacing is of nearly the same order (Δd/d≃±1×10-5). Lattice spacing is small near the wafer center and large around the periphery for both the high and low dislocation density wafers.