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Fabrication of the SiOC/HfO2 Ceramic Composites by the Sol-Gel Method

In this paper, Hf element was introduced into the Si-O-C network by the sol-gel method using the dimethyldiethoxysiloxane (DMDES, (CH3)2Si(OC2H5)2) and hafnium tetra(n-butoxide) (HfOR, Hf(OC4H9)4) as raw materials. The SiOC/HfO2 ceramic composite was obtained by pyrolyzing Si-Hf-O-C gel at 1000 °C in argon. FT-IR spectra revealed the presence of Si-O-Hf peaks at 932 cm-1. The weight loss of the as-prepared SiOC/HfO2 was about 0.2 wt.% under argon atmorsphere up to 1550 °C, which was much lower than the hafnia-free SiOC composites and exhibited a remarkable improved thermal stability.