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Performance and leakage optimization in carbon and fluorine co-implanted pMOSFETs

In this work we demonstrate that effective tailoring of the extension junction in MOS devices with C co-implantation must be accompanied by re-optimization of the deep HDD (HDD+) profile and spacer dimensions. In this way junction and doping profile optimization can successfully improve short channel effect (SCE) control, without penalty in performance or junction leakage.