{'fraction_non_alphanumeric': 0.02812939521800281, 'fraction_numerical': 0.015471167369901548, 'mean_word_length': 5.414414414414415, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Improved Performance in Mirror-Assisted Back-Contact CMOS Photovoltaic Devices

Improved performance in CMOS interdigitated back-contact photovoltaic devices (IBC-PVs) is demonstrated by utilizing interdigitated junctions and a back metal reflector to simultaneously achieve large total junction area, uniform series resistance, and high optical back reflection. Enhanced ultimate efficiency of 20.33% is experimentally obtained from a 35-μm thick CMOS IBC-PV with a junction period of 7.2 μm under 980-nm illumination. Since the proposed IBC-PVs are implemented by standard bulk CMOS process, it can be easily integrated with other microelectronics to realize a self-power system for a variety of applications.