{'fraction_non_alphanumeric': 0.0380952380952381, 'fraction_numerical': 0.014814814814814815, 'mean_word_length': 4.9125, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Densification and stress development for the chemical-solution deposition of PZT thin layers on silicon

The evolution of stress is reported, as a function of processing conditions, for the chemical solution deposition of Pb(Zr/sub 0.53/Ti/sub 0.47/)O/sub 3/ (PZT) thin layers on silicon (Si). Shrinkage behavior was determined by in situ ellipsometry, and stress by in-situ laser reflectance measurements, to a maximum temperature of 700/spl deg/C. Densification, thermal analysis, pyrolysis and crystallization data are related to stress development as a function of the sequential build-up of multi-layered structures. A residual tensile stress of /spl sim/125 MPa was measured at room temperature for an amorphous 1-layer film. The magnitude of the stress decreased with increasing number of deposited layers. Observations are made for the crystallization behavior of pyrochlore on Si, and the formation of a lead silicate interfacial layer.