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Numerical Investigation of Optical and Photoelectric Properties for 850 nm VCSELs with Arbitrary Crystal Orientation

High-speed VCSELs are widely used for high-capacity, short-range data communication links. Here, we numerically investigate the optical and electronic properties of a crystal orientation-dependent 1.06% compression InGaAs-AlGaAs laser emitting around 850 nm. The reduction of the density of states is observed in the largest energy range for the quantum well in the (110) orientation compared with the conventional (001) orientation. The calculated transparency carrier density decreases from 2.74 × 1018 cm−3 to 1.88 × 1018 cm−3 with the gain coefficient rising from 4969.4 cm−1 to 5427.2 cm−1 in (110) orientation. The 3 dB bandwidth of 31.25 GHz is realized in the (110) orientation, which can support 60 Gbps (NRZ) applications.