{'fraction_non_alphanumeric': 0.03969465648854962, 'fraction_numerical': 0.010687022900763359, 'mean_word_length': 5.6938775510204085, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Surface superlattice formation in silicon inversion layers using 0.2-&#181;m period grating-gate electrodes

Transport has been studied in n-channel metal-oxide-semiconductor field-effect transistors (MOSFET's) in which a 0.2-µm-period tungsten grating, with lines perpendicular to the current flow, was incorporated into the gate. This gate structure, which was fabricated using X-ray lithography and lift-off, produces a controllable periodic modulation of the inversion electron distribution. Low-temperature conductance measurements reveal reproducible structure which is consistent with the formation of a surface superlattice in the inversion layer.