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Laser‐irradiated zinc oxide thin‐film transistors fabricated by solution processing

Abstract— This study investigates the effects of subjecting zinc oxide (ZnO) thin films to laser irradiation. The optical, structural, and electrical properties of the as‐deposited and laser‐irradiated films at different laser energies were studied. The transmittances without/with laser irradiation showed a net increase from 85 to 92% (@550 nm) for 250‐nm ZnO films, indicating an improvement in sample crystal linity. In addition, laser treatment decreased the ZnO band gap. Composition structure analysis shows that the crystallinity increased when the laser energy increased. Thin‐film transistors (TFTs) with a ZnO active layer were fabricated. The mobility of as‐deposited ZnO TFT devices (0.19 cm2/V‐sec) increased more than 2.5 times for ZnO of unirradiated laser treatment (0.49 cm2/V‐sec).