{'fraction_non_alphanumeric': 0.033734939759036145, 'fraction_numerical': 0.014457831325301205, 'mean_word_length': 4.691780821917808, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Focused ion beam-assisted manipulation of single and double β-SiC nanowires and their thermal conductivity measurements by the four-point-probe 3-ω method

Control of one-dimensional (1D) nanostructures is demonstrated in this paper by selectively placing and aligning silicon carbide (β-SiC) nanowires (NWs). We developed a reliable and highly reproducible way of placing a single or double SiC NW on pre-patterned electrodes by using a focused ion beam and a nanomanipulator. 3-ω signals obtained by the four-point-probe method were used in measuring the thermal conductivity of the NWs. The thermal conductivities of the placed single and double β-SiC NWs were obtained at 82 ± 6 W mK − 1 and 73 ± 5 W mK − 1, respectively. The proposed technique offers new possibilities for manipulating and evaluating 1D nanoscale materials.