{'fraction_non_alphanumeric': 0.03695881731784583, 'fraction_numerical': 0.027455121436114043, 'mean_word_length': 4.815950920245399, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Performance Estimation of Silicon-Based Self-Cooling Device

Since self-cooling devices were first proposed, several materials have been tested for their suitability to be used in them. A self-cooling device requires a high Seebeck coefficient, a low electrical resistivity, and a high thermal conductivity. Here, we report experimental results for single-crystal silicon doped with boron. Samples were fabricated with carrier densities in the range of 2.0×1015 to 1.6×1019 cm-3, and their Seebeck coefficient and electrical resistivity were measured. Silicon with a carrier density of 1.6×1019 cm-3 has a power factor of 4.8×10-3 W/(K2·m) at room temperature. The cooling capability of a self-cooling device was estimated using a one-dimensional model. The results suggest that a self-cooling device based on silicon with a high carrier density can have a higher heat removal performance than a conventional silicon power device of the same size.