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Determination of the trap states distribution in Poly-Si films using the OEMS modulation

A method to determine the distribution of the trap states in Poly-Si films based on the current response under the OEMS modulation is proposed in this paper. The distribution can be determined by the comparison between the response current which caused both by the deep-level trap states and the band-tail trap states. According to the spectrum of the current response under the OEMS modulation, a model that the deep-level trap states having a Gaussian distribution with a peak around the midgap and the band-tail trap states with a increasing exponential up to the valence band edge is presented.