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A novel low-leakage 8T differential SRAM cell

A novel low-leakage 8T differential SRAM cell is presented in 65nm bulk CMOS technology with the aim to address standby power consumption of embedded memories. The proposed cell supports differential read and write operation. HSPICE simulations incorporating process variation indicate that the proposed cell exhibits 84.8%, 44.8%, 42.6% and 27.0% less leakage under worst case conditions compared to 5T, 6T, 8T and 9T cells reported earlier in literature. With approximately 60% and 33% more area than the conventional 5T and the 6T cells and 11% less area than the 9T cell the proposed cell provides 3900.5× and 1.3× improvement in read static power noise margin compared to its 5T and 6T counterparts respectively under worst case conditions.