{'fraction_non_alphanumeric': 0.04316546762589928, 'fraction_numerical': 0.02302158273381295, 'mean_word_length': 4.75206611570248, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Room-Temperature Epitaxial Growth of (Li,Ni)O Thin Film with Li Content up to 60 mol %

NiO thin films containing up to 60 mol % Li were deposited on an ultra smooth sapphire (0001) substrate at room-temperature (RT) by the pulsed laser deposition (PLD) process. From in situ reflection high-energy electron diffraction (RHEED) and ex situ X-ray diffraction (XRD), it was found that the cubic NiO thin film containing 60 mol % Li, deposited at RT, could be epitaxially grown with (111) orientation; however the film became polycrystalline when deposited at 200 °C under the same atmosphere. These results indicate the possible exploration of novel growth of the oxide films using RT PLD process.