{'fraction_non_alphanumeric': 0.028668941979522185, 'fraction_numerical': 0.010921501706484642, 'mean_word_length': 5.185654008438819, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Characterization of a Flexible InGaSb/PI Thin Film Grown by RF Magnetron Sputtering and Aqueous Stability Improvement via Surface Coating

Flexible InGaSb thin films are considered useful for reducing the power generation cost of thermophotovoltaic (TPV) systems. The growth and evaluation of flexible InGaSb thin films on polyimide (PI) films by multi‐cathode RF magnetron sputtering are reported here. The obtained InGaSb/PI thin film is a polycrystalline and nearly stoichiometric (In0.24Ga0.27Sb0.49) thin film. The conduction type is n‐type, and the electron mobility is 108 cm2 V−1 s−1. The analysis of its electrical properties shows that In acts as a surfactant during the crystal growth. Two types of donors (Ini or SbIn and defects related to the dangling bonds in the grain boundary) are observed in the InGaSb/PI thin film, with no residual acceptor. Furthermore, it is important to reduce the environmental release of TPV films by improving their aqueous stability and thereby expand the application range of large‐area TPV systems. The effectiveness of a surface coating material, namely (3‐mercaptopropyl) trimethoxysilane (MPT), is clarified by comparing it with the efficacy of other coating materials. The MPT coating covers the entire InGaSb/PI thin film and helps reduce its toxicity without affecting its properties. These findings lead to the conclusion that the flexible MPT‐coated InGaSb/PI thin film has potential applications in TPV cells.