{'fraction_non_alphanumeric': 0.012838801711840228, 'fraction_numerical': 0.0, 'mean_word_length': 5.324324324324325, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A Model for ovonic threshold switch of amorphous GST based on hopping transport process

This paper presents an OTS model for PCM application based on the hopping transport process, which is widely used in the organic semiconductor device simulation. In this work an equivalent hopping probability model is presented according to the Abrahams-Miller formula, meanwhile an equivalent capacitor model is presented to depict the charge distribution in the amorphous GST. By coupling the hopping probability model and the capacitor model, the OTS I–V characteristic for OTS effect with different geometry and trap density are achieved, and the results agree with those from the reported measurements data.