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Silicon Carbide Surface Micromachining Technology by Tetramethylsilane-Based Atmospheric Vapor Deposition

Systematic study on selective silicon carbide (SiC) deposition on SiN, SiO2 and Si was performed. Poly-SiC was deposited by atmospheric pressure vapor deposition (APCVD) using tetramethylsilane (TMS), which allows easy handling and low temperature deposition. We found a process condition enabling the selective SiC deposition as well as a design guideline for SiC surface micromachining based on the selective SiC deposition. If both process condition and design guideline are used, continuous fine-grained SiC films are deposited on SiN and Si, while SiC islands are deposited on SiO2. SiC films on SiN are used as the microstructures, and SiC islands on SiO2 are lifted off by SiO2 sacrificial etching. Finally, movable SiC microstructures were fabricated by the developed surface micromachining technology.