{'fraction_non_alphanumeric': 0.016290726817042606, 'fraction_numerical': 0.0, 'mean_word_length': 5.495934959349594, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Facile activation of a GaAs substrate with electron beam irradiation for THz photoconductive antenna

One of the most important technological challenges that photoconductive devices in terahertz systems encounter is the viability of cost-effective and large-scale device production. We introduce an economical and mass-producible approach to fabricating a substrate material for photoconductive devices. By using an electron beam irradiator, the material properties of GaAs were engineered in a controllable manner, achieving comparable performance to that of a well-known photoconductive substrate, LT-GaAs. THz emission of the irradiated substrates was tested and found to be superior to a commercial device in terms of high-power THz signal emission and ability to withstand a high bias voltage.