{'fraction_non_alphanumeric': 0.03585147247119078, 'fraction_numerical': 0.005121638924455826, 'mean_word_length': 4.792592592592593, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Low-frequency noise dependence of TFSOI BiCMOS for low power RF mixed-mode applications

Low-frequency (1/f) noise has been characterized for the first time in TFSOI BiCMOS devices designed for low power high frequency applications. In the bipolar transistors, 1/f noise obeyed a square law dependence on base current and was proportional to the inverse of the area. Aside from the expected 1/f noise, we have also observed a bias dependent generation-recombination (G/R) noise component in a small portion of these TFSOI BJTs. The 1/f noise in the near-fully-depleted MOSFETs was found to be bias independent in both the linear and saturation region of operation. However, when operated in the subthreshold regime, extraneous generation-recombination (G/R) noise becomes apparent.