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Boron Emission Rate from Si/SiO2 Interface Traps to Bulk Silicon for Dose Loss Modeling

The evolution of the boron dose loss for a 0.5 keV 5×1012 cm-2 B implant during thermal annealing is measured at temperatures of 820, 870, and 920°C in nitrogen ambient. The amount of boron dose loss decreases with increasing annealing time, which is expressed with an exponential function. The activation energy for the decay time constant is found to be 2.64 eV. The boron emission rate from Si/SiO2 interface traps to bulk silicon is derived as a function of annealing temperature.