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Comparison of Defect Formation in InGaAsP/InP and GaAlAs/GaAs

Crystal defects in InGaAsP/InP and GaAlAs/GaAs, induced by carrier injection and those by heavy doping were investigated by transmission electron microscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. Recombination-enhanced dislocation glide motion and climb motion often occurred in GaAlAs/GaAs DH LED's, but did not occur in InGaAsP/InP DH LED's. Furthermore, faulted loops were often observed in heavily doped GaAlAs crystals. However, in heavily doped InGaAsP LPE crystals (λ=1.3 µm), no loops were observed, and only non-structural precipitate-like defects were observed. The difference in the occurrence of dislocation glide motion and climb motion between these two materials could be well explained by considering the generation of faulted loops and dislocation loops in heavily doped crystals.