{'fraction_non_alphanumeric': 0.03680981595092025, 'fraction_numerical': 0.0, 'mean_word_length': 4.882882882882883, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effects of Antimony Diffusion into Porous Silicon Light Emitting Diodes

Porous silicon (PS) light emitting diodes (LEDs) consisting of n-PS/p-PS/p-Si or n-PS/p-Si structures fabricated by postanodical Sb diffusion were characterized for assessment of the effect of Sb diffusion upon PS-LED characteristics. The homogeneity of electrical characteristics of PS-LEDs was improved by Sb diffusion. Consequently, the average series resistance of the Sb-diffused PS-LEDs was found to be lower than that of nondiffused PS-LEDs. The average external quantum efficiency of the PS-LEDs was also enhanced by Sb diffusion. The experimental results were discussed.