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RB-IGBT Based MMC Topologies with DC Fault Blocking Capability

Modular multilevel converter (MMC) is a research hotspot in the field of high voltage direct current (HVDC) transmission. When constructing MMC systems, fault handling capability should be considered to avoid devices failure in dc side fault condition. Several existing topologies with dc side fault blocking capability are evaluated in this paper. Then, sub-module topologies based on the reverse-blocking insulated gate bipolar transistor (RB-IGBT) are introduced. Comparison between RB-IGBT based MMC topologies and existing conventional topologies in terms of conduction loss is carried out to show the superiority of the RB-IGBT based topologies. To verify the dc side fault blocking capability, simulation is carried out. The reported study results confirm the dc side fault blocking capability of the RB-IGBT based topologies.