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Sensitivity Comparison of a Self-Standing Porous Silicon Membrane Under Flow-Through and Flow-Over Conditions

An optical sensor based on a self-standing porous silicon (PS) membrane is presented. The sensor was created by electrochemically etching a heavily doped p-type silicon wafer with an organic electrolyte that contained dimethylformamide. After fabrication, a high-current density close to electropolishing was applied in order to allow the detachment from the substrate using a lift-off method. The PS membrane was integrated in a microfluidic cell for sensing purposes, and reflectance spectra were continuously obtained while the target substance was flowed. A comparison of the bulk sensitivity is achieved when flowing through and over the pores is reported. During the experiments, a maximum sensitivity of 770 nm/RIU measured at 1700 nm was achieved. Experimental sensitivity values are in good agreement with the theoretical calculations performed when flowing through the PS membrane, it means that the highest possible sensitivity of that sensor was achieved. In contrast, a drop in the sensitivity of around 25% was observed when flowing over the PS membrane.