{'fraction_non_alphanumeric': 0.031496062992125984, 'fraction_numerical': 0.012598425196850394, 'mean_word_length': 5.235294117647059, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
The superlattice barrier capacitor: A structure for the investigation of heterojunction interfaces

A symmetric n- GaAs/AlAs-GaAs superlattice/n- GaAs structure has been fabricated and electrical measurements made between 300 and 77 K. At 238 K and below, the C-V characteristics were clearly symmetric, in good agreement with theory. Such a structure can be used as a sensitive probe of the interface defects at the "normal" and "inverted" heterojunction interfaces associated with the barrier. Furthermore, the highly nonlinear C-V characteristic of this symmetric semiconductor capacitor near-zero bias may have unique applications.