{'fraction_non_alphanumeric': 0.04310344827586207, 'fraction_numerical': 0.028735632183908046, 'mean_word_length': 4.760330578512397, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Crystallization of Au-Si/glass thin film: a real-time synchrotron X-ray scattering study.

The crystallization of amorphous, Si-rich, Au28Si72/glass thin film was studied in real-time synchrotron X-ray scattering experiments. The amorphous film crystallizes first into Au and Si phases at a low temperature of 206 degrees C. At annealing temperatures above eutectic temperature (T(E) = 360 degrees C), the Au phase melts while the Si phase rapidly grows further. The crystallized Au28Si72 thin film has nanowire-type grains with 1000-nm-length and 10-nm-diameter. We confirm that the Au liquid phase contributes to the low-temperature crystallization of the Si solid phase for Si-nanowire growth.