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Effects induced by electron beam irradiation on Y1Ba2Cu3O7-x Josephson structures: a new approach to control the junction barrier properties

The properties of YBa2Cu3O7-x grain boundary Josephson junctions have been reproducibly modified by a focused electron beam irradiation. The original junctions were fabricated by using the property of YBa2Cu3O7-x film to grow (103)-oriented on the bare (110) SrTiO3 substrate and (001)-oriented on the part of the substrate with the MgO seed layer. The junction parameters can be adjusted controllably by applying an appropriate irradiation dose. Electron irradiation reduced the critical current of the junctions IC and increased the normal state specific resistivity. The shift of the voltage position of the Fiske steps was also observed.Isothermal annealing partly restores the original junction properties. A correlation between the transport properties and the microstructure was obtained by determining the ratio of a barrier thickness to the dielectric constant of the junctions with different barriers. These results give evidence of the role of the oxygen content and the dielectric constant of the interface region in transport phenomena. The experiment also demonstrates frequency tunability in a resonant soliton oscillator.