{'fraction_non_alphanumeric': 0.03163444639718805, 'fraction_numerical': 0.022847100175746926, 'mean_word_length': 5.6608187134502925, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Metal nanostructures assembled at semiconductor surfaces studied with high resolution scanning probes

Dynamic force microscopy (DFM), Kelvin probe force microscopy (KPFM) and scanning tunnelling microscopy/spectroscopy (STM/STS) have been used to study epitaxial nanostructures formed as a result of submonolayer deposition of gold on reconstructed InSb, InAs, and GaAs(001) surfaces. It has been found that both topography and composition of the structures are strongly dependent on the substrate temperature during evaporation. In the particular case of Au deposited on a c(8 × 2) InSb(001) surface at 300 K, the nanostructures have predominantly the form of rectangular islands with edges oriented along [110] and [] directions. Increasing the substrate temperature up to 600 K during deposition results in formation of narrow, long structures (nanowires) with an average length of 800 nm. The nanowires are created along the [110] direction of the reconstructed InSb(001) surface. High resolution KPFM and STS measurements indicate that nanowires of different heights may have different chemical composition and electronic structure.