U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Icon_funbox Did You Know...

...that the Eveready Battery began as an invention called the "electric flowerpot," which was a tube with a battery and light bulb inside? The idea was to fasten this gizmo to the side of a flowerpot so it would illuminate the flowers from the bottom. The idea died on the vine and the businessman who licensed the flower pot, Conrad Huber, was left with a pile of useless tubes -- until he found a way to market them as batteries to light the world!

Newsletter  PatentStorm News

Make the Most of Our Site

See this month's Top Inventors and Most Cited Patents.


Registered users: Manage your profile.


Class 430/329 - Removal of imaged layers

Definition: Processes wherein the imaged and developed layer of the
No. of patents: 709
Last issue date: 12/24/2013

NumberTitleIssue Date
8614053Processess and compositions for removing substances from substrates
Processes associated apparatus and compositions useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. Processes are presented that apply a minimum volume...
8470519Method for removing photoresist pattern
Disclosed is a method of removing a photoresist pattern, which includes radiating light onto a substrate having a photoresist pattern formed thereon and implanted with a predetermined dopant so that the temperature of the substrate is increased to be equal to or hig...
8440389Stripper solutions effective for back-end-of-line operations
Back end of line (BEOL) stripping solutions which can be used in a stripping process that replaces etching resist ashing process are provided. The stripping solutions are useful for fabricating circuits and/or forming electrodes on semiconductor devices for semicond...
8236485Photoresist removal
Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method...
7989156Substrate treatment method and substrate treatment apparatus
A substrate treatment apparatus which uniformly forms a fine resist pattern with a desired dimension within a plane of a substrate is disclosed. In a solvent vapor supply unit, a solvent vapor discharge nozzle is provided which can discharge a solvent vapor for swel...
7943290Method of forming fine pattern using azobenzene-functionalized polymer and method of manufacturing nitride-based semiconductor light emitting device using the method of forming fine pattern
Provided is a method of forming a fine pattern having a pattern dimension of 1 μm or less, repeatedly with reproducibility. The method of forming the fine pattern includes: forming an azobenzene-functionalized polymer film on an etched layer; irradiating the azoben...
7875419Method for removing resist pattern and method for manufacturing semiconductor device
It is an object to provide a technique for removing a resist favorably without leaving residue in the case of using a nonaqueous resist stripper. According to the present invention, in order to achieve the object, when a resist pattern is removed by using the nonaqu...
7838206Substrate processing method and substrate processing apparatus
A substrate processing method according to the present invention is to be applied for stripping and removing, from the surface of a substrate, a resist no longer required. According to the substrate processing method, a resist stripping liquid is supplied to the cen...
7820368Photoresist stripper composition and methods for forming wire structures and for fabricating thin film transistor substrate using composition
A photoresist stripper composition, a method for forming wire structures thereby, and a method of fabricating a thin film transistor substrate using the composition. The photoresist stripper composition includes about 50 WT % to about 70 WT % of butyldiglycol, about...
7452660Method for resist strip in presence of low K dielectric material and apparatus for performing the same
A method and apparatus is provided for using a plasma generated from a processing gas mixture including H2O to efficiently strip photoresist material without causing significant damage to exposed, underlying low k dielectric material. The method includes ...
7432209Plasma dielectric etch process including in-situ backside polymer removal for low-dielectric constant material
A plasma etch process with in-situ backside polymer removal begins with a workpiece having a porous or non-porous carbon-doped silicon oxide dielectric layer and a photoresist mask on a surface of the workpiece. The workpiece is clamped onto an electrostatic chuck i...
7427466Anti-reflection optical data storage disk master
Mastering techniques are described that can improve the quality of a master used in data storage disk manufacturing. In particular, the techniques described herein can improve resolution of the features created on the master by reducing mastering noise. The techniqu...
7427360Process and ink for making electronic devices
A process for making an electronic device comprising a dielectric substrate laminated with an electrically conductive metal or alloy which comprises applying a non-aqueous etch-resistant ink by ink jet printing to selected areas of the metal or alloy, exposing the e...
7419760Top anti-reflective coating composition, method for forming the pattern of a semiconductor device using the same, and semiconductor device comprising the pattern
Disclosed herein is a top anti-reflective coating composition comprising a bissulfone compound, as a photoacid generator, represented by Formula 1 below: wherein R1 and R2 are ...
7413848Method of removing photoresist and photoresist rework method
A method of removing photoresist is provided. In the whole process of removing the photoresist, plasma is not used. Instead, a first solution is used in a first removal step to remove a photoresist layer. Then, a second solution is used in a second removal step to c...
7399582Material for forming fine pattern and method for forming fine pattern using the same
In the method wherein a resist pattern is miniaturized effectively by applying a fine pattern forming material, the fine pattern forming material used for providing with a cured coated layer pattern, wherein development defects are reduced by water development is of...
7387868Treatment of a dielectric layer using supercritical CO
A method of passivating silicon-oxide based low-k materials using a supercritical carbon dioxide passivating solution comprising a silylating agent is disclosed. The silylating agent is preferably an organosilicon compound comprising organo-groups with five carbon a...
7371691Silicon recess improvement through improved post implant resist removal and cleans
The present invention provides a process of manufacturing a semiconductor device 200 while reducing silicon loss. In one aspect, the process includes removing a photoresist layer 270 from a semiconductor substrate 235 adjacent a gate 240 ...
7371507Methods for fabricating semiconductor devices
Methods for fabricating semiconductor devices are disclosed. A disclosed method comprises: forming a conductive layer, depositing a interlayer dielectric layer, forming an anti-reflective coating layer on the interlayer dielectric layer, forming a photoresist patter...
7368064Cleaning solution and manufacturing method for semiconductor device
A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and ...
7368394Etch methods to form anisotropic features for high aspect ratio applications
Methods for forming anisotropic features for high aspect ratio application in etch process are provided in the present invention. The methods described herein advantageously facilitates profile and dimension control of features with high aspect ratios through a side...
7365017Method for finishing metal line for semiconductor device
A method for finishing a metal line for a semiconductor device is disclosed, in which polymer generated when forming the metal line including aluminum and its alloy is effectively removed and the metal line is prevented from being eroded. A chlorine radical and a ch...
7364837Method for pattern formation using photoresist cleaning solution
Photoresist cleaning solutions are used to clean semiconductor substrates before or after an exposing step when photoresist patterns are formed. The cleaning solutions include H2O and a nonionic surfactant compound represented by Formula 1. By spraying th...
7364839Method for forming a pattern and substrate-processing apparatus
A pattern forming method comprises forming a photosensitive resin film on a substrate, exposing the photosensitive resin film, forming a pattern of the photosensitive resin film by supplying a developing solution to the photosensitive resin film, and slimming to rem...
7361231System and method for mid-pressure dense phase gas and ultrasonic cleaning
Workpieces are loaded into a cleaning chamber. The cleaning chamber is pressurized with a first dense-phase cleaning fluid, the temperature and pressure of the first dense-phase fluid being maintained at less than about 1500 psi using a temperature control device. T...
7361448Resist pattern thickening material and process for forming the same, and semiconductor device and process for manufacturing the same
The present invention provides a resist pattern thickening material which can thicken a resist pattern and form a fine space pattern, exceeding exposure limits of exposure light used during patterning. The resist pattern thickening material contains a resin and a po...
7357115Wafer clamping apparatus and method for operating the same
7357846Substrate processing apparatus and substrate processing method
In a resist-removing process system 1 for removing a resist film formed on a wafer W, the resist film is denatured so as to make the resist film soluble in water and, then, the resist film is removed from the wafer by applying a water-wash processing to the d...
7354131Inkjet printhead nozzle plate
Methods of forming a nozzle plate include forming a first reverse imageable positive photoresist layer on the substrate and protecting an area thereof adjacent an ink ejection element from ultraviolet energy while exposing other than the protected area to such energ...
7354860Manufacturing method of mask blank and manufacturing method of transfer mask
A manufacturing method of a mask blank from which an unnecessary resist film formed on the peripheral edge of a substrate main surface is removed in a mask blank, which is an original substrate of a transfer mask having a transfer pattern for transferring to a body ...
7351635Method of fabricating microelectronic device using super critical fluid
Methods of fabricating a microelectronic device having improved performance characteristics are disclosed which are characterized by using super critical fluid to perform a material removal step. In one illustrative embodiment, the method includes preparing a substr...
7351514Method for applying a resist layer, uses of adhesive materials, and adhesive materials and resist layer
A method in which a resist layer is applied to a base layer is disclosed. The resist layer includes an adhesive material, and the adhesive force of the adhesive material decreases or increases during an irradiation process. Residues of the resist layer may be stripp...
7338751Process for producing printed wiring board and photosensitive resin composition used in the same
An object of the present invention is to provide a process for producing a printed wiring board, which is advantageous not only in that the reduction in size and increase in density of the wiring board are achieved and further the steps are simplified, but also in t...
7335319Semiconductor stress buffer coating edge bead removal compositions and method for their use
An edge bead remover composition that includes at least one ketone selected from the group consisting of: wherein R1 and R2 are independently selected from the group consisting of:
7332436Process of removing residue from a precision surface using liquid or supercritical carbon dioxide composition
A composition which includes liquid or supercritical carbon dioxide and an acid having a pKa of less than about 4. The composition is employed in a process of removing residue from a precision surface, such as a semiconductor sample, in which the precision surface i...
7332449Method for forming dual damascenes with supercritical fluid treatments
A method for forming a damascene structure by providing a single process solution for resist ashing while avoiding and repairing plasma etching damage as well as removing absorbed moisture in the dielectric layer, the method including providing a substrate comprisin...
7329483Low pH development solutions for chemically amplified photoresists
A method for carrying out positive tone lithography with a carbon dioxide development system is carried out by: (a) providing a substrate, the substrate having a polymer resist layer formed thereon, (b) exposing at least one portion of the polymer resist layer to ra...
7324264Electro-optical modulating display and method of making the same
This invention relates to a method of manufacturing micro-cell arrays. Such an array may find use in a number of applications such as, for example, a video display, electronic paper, and signage. The microcell arrays find particular use in electromodulating displays...
7323064Supercritical fluid technology for cleaning processing chambers and systems
The invention includes a method of cleaning a processing chamber by introducing supercritical fluid into the processing chamber. A residue over an internal chamber surface is contacted with the supercritical fluid to remove the residue from the surface. The inventio...
7303855Photoresist undercoat-forming material and patterning process
An undercoat-forming material comprising a novolak resin having a fluorene or tetrahydrospirobiindene structure, an organic solvent, an acid generator, and a crosslinker, optionally combined with an intermediate layer having an antireflective effect, has an absorpti...
Sign InRegister
forgot password?