US 2020/0319555 Al  2  Oct. 8, 2020  SUMMARY OF THE INVENTION  DETAILED DESCRIPTION  BRIEF DESCRIPTION OF THE DRAWINGS  [0032]  Herein, unless otherwise indicated, alkyl refers to  hydrocarbon groups which can be linear, branched ( e.g.  methyl, ethyl, propyl, isopropyl, tert-butyl and the like) or  cyclic (e.g. cyclohexyl, cyclopropyl, cyclopentyl and the  like) multicyclic (e.g. norbornyl, adamantly and the like).  These alkyl moieties may be substituted or unsubstituted as  described below. The term alkyl refers to such moieties with  C-1 to C-20 carbons.  It  is understood that for structural  reasons linear alkyls start with C-1, while branched alkyls  [0023]  FIG.  4  Compares the undercut lithographic perfor› mance when using a photoresist formulation containing a  [0022]  FIG.  3  Compares the undercut lithographic perfor› mance when using a photoresist formulation containing  Monazoline C but without a DI-dye compared to a formation  containing both Monazoline C and the DI-dye  [0021]  FIG.  2  Shows non-limiting examples of i-line  (broadband) trihalo photoacid generators which generate  either HCl or HBr.  [0020]  FIG.  1  Shows non-limiting examples of i-line  (broadband) photoacid generators which generate sulfonic,  and other strong acids.  [0031]  The section headings used herein are for organiza› tional purposes and are not to be construed as limiting the  subject matter described. All documents, or portions of  documents, cited in this application, including, but not  limited to, patents, patent applications, articles, books, and  treatises, are hereby expressly incorporated herein by refer› ence in their entirety for any purpose. In the event that one  or more of the incorporated literature and similar materials  defines a term in a manner that contradicts the definition of  that term in this application, this application controls.  [0019]  Other aspects of this invention are the processes of  coating on a substrate and imaging the above photoresist  with 365 nm, or broadband radiation containing a 365 nm  component, to produced features which have a large under› cut profile with a good exposure latitude and also the  processes of using such profile in a metallization/lift off  approach.  [0030]  It  is to be understood that both the foregoing  general description and the following detailed description  are illustrative and explanatory, and are not restrictive of the  subject matter, as claimed. In this application, the use of the  singular includes the plural, the word "a" or "an" means "at  least one", and the use of "or" means "and/or", unless  specifically stated otherwise. Furthermore, the use of the  term "including", as well as other forms such as "includes"  and "included", is not limiting. Also, terms such as "ele› ment" or "component" encompass both elements and com› ponents comprising one unit and elements or components  that comprise more than one unit, unless specifically stated  otherwise. As used herein, the conjunction "and" is intended  to be inclusive and the conjunction "or" is not intended to be  exclusive unless otherwise indicated. For example, the  phrase "or, alternatively" is intended to be exclusive. As  used herein, the term "and/or" refers to any combination of  the foregoing elements including using a single element.  [0029]  FIG.  10  Compares the undercut profiles of two  photoresist formulations of Examples 14 and 15, using  different dyes, Coumarin 7 dye and DI dye respectively.  [0028]  FIG.  9  Shows the undercut lithographic perfor› mance of two photoresist formulations using Tris-isobu› tylamine quencher at two different concentrations of  Examples 12 and 13.  [0027]  FIG.  8  Shows extended undercut lithographic per› formance of two photoresist formulations of Examples 10,  using N-Methyldipropylamine quencher and Example 11,  using N,N-diisopropylethylamine quencher respectively  [0013]  In one of its aspects, the present invention relates  to a chemically-amplified, negative-acting, photoresist com› position, imageable by 365 nm radiation that is developable  in aqueous base, wherein the photoresist composition com› prises, along with a solvent, the following solids compo› nents:  [0026]  FIG.  7  Compares the undercut lithographic perfor› mance  of two  photoresist  formulations  Comparative  Example 8 using TPA quencher and Example 9 using 2El  quencher.  [0025]  FIG.  6  Compares the undercut lithographic perfor› mance of two photoresist formulations Example 7 Using AI  quencher and Example 8 Using MNNE quencher.  [0024]  FIG.  5  Compares the undercut lithographic perfor› mance of two photoresist formulations both containing  Monazoline C and DI-dye but where one contains an Mine  PAG which generates HCl and the second photoresist con› tains instead an i-line PAG which generates a sulfonic acid.  DI-dye, but without Monazoline C compared to a formation  containing both Monazoline C and the DI-dye  a pronounced undercut where further this undercut has a  significant exposure latitude during processing of the resist  where these properties are imparted by the formulation itself  during normal processing and do not depend upon optical  manipulation of exposure tool parameters such as defocus  settings. Herein is described a novel high sensitivity chemi› cally amplified i-line photoresist formulation which unex› pectedly, when exposed and processed, gives a pronounced  undercut which has a wide exposure latitude. The pro› nounced undercut enabling for an easier lift off process after  metallization of these resist patterns.  [0018]  e) a quencher system consisting essentially of an  amine quencher, or a mixture of such amine quenchers,  having a pKa in water from about 6.0 to about 12,  where the amine quencher has a boiling point of at least  100°  C., at 1 atmosphere pressure, and comprises at  least one C2-C25 alkyl substituent, a -(CH$_{2}$)nOH  substituent, or a -(CH$_{2}$)nO-(CH$_{2}$)n’---0-R’ sub› stituent or comprises a mixture of these substituents,  where n and n’ are independently an integer ranging  from 2 to 4 and R’ is a Cl-C4 alkyl or H.  [0017]  d) a dye having a molar attenuation coefficient at  365 nm ranging from about 1.61xl0 $^{4 }$to about 1.07xl04  mole-$^{1 }$L cm- 1 .  [0016]  c) a crosslinking agent that forms a carbonium  ion upon exposure to the acid from step b) generated by  exposure to radiation, and which comprises an etheri› fied melamine.  [0015]  b) a photoacid generator that forms an acid upon  exposure to radiation at 365 nm, in an amount sufficient  to initiate crosslinking of the film-forming binder resin.  [0014]  a) an aqueous base soluble phenolic film-form› ing polymeric binder resin having ring bonded  hydroxyl groups. 