US 10,323,113 B2  142  141  TABLE 1  On a substrate (silicon wafer), a spin-on carbon film  ODL-102 (Shin-Etsu Chemical Co., Ltd., carbon content 80  wt  % )  was deposited to a thickness  of  200 nm and a  silicon-containing spin-on hard mask SHB-A940 (Shin-Etsu  Chemical Co., Ltd., silicon content 43 wt%) was deposited  thereon to a thickness  of  35 nm. On this substrate for trilayer  process, each  of  the resist compositions in Table 1 was spin  coated, then baked on a hot plate at 100°  C. for 60 seconds  to form a resist film  of  80 nm thick.  Using an ArF excimer laser scanner NSR-S610C (Nikon  Corp., NA 1.30,  a  0.98/0.78, 35°  cross-pole illumination,  azimuthally polarized illumination), the resist film was  exposed through a  6%  halftone phase shift mask bearing a  pattern having a line  of  50 inn and a pitch  of  100 nm  (on-wafer size). The resist film was baked (PEB) at the  temperature shown in Table 1 for 60 seconds. Thereafter, the  resist film was developed inn-butyl acetate for 30 seconds  in Examples 1-1 to 1-11 and Comparative Examples 1-1 to  1-3 or in 2.38 wt  %  tetramethylammonium hydroxide  (TMAH) aqueous solution in Example 1-12 and Compara- tive Example 1-4, yielding a negative line-and-space (LIS)  pattern having a space  of  50 nm and a pitch  of  100 nm.  The pattern was observed under a CD-SEM (CG-4000,  Hitachi High-Technologies Corp.). The exposure dose  capable  of  resolving a LIS pattern at 1: 1 was determined as  sensitivity, and edge roughness (LWR) was measured. The  results are shown in Table 1.  Polymer  (pbw)  Example  1-1  Polymer 1  (100)  1-2  Polymer 1  (100)  1-3  Polymer 1  (100)  1-4  Polymer 1  (100)  1-5  Polymer 1  (100)  1-6  Polymer 1  (100)  1-7  Polymer 1  (100)  1-8  Polymer 1  (100)  1-9  Polymer 1  (100)  1-10 Polymer 1  (100)  1-11 Polymer 1  (100)  1-12 Polymer 2  (100)  Comparative  1-1  Polymer 1  Example  (100)  1-2  Polymer 1  (100)  1-3  Polymer 1  (100)  1-4  Polymer 2  (100)  Acid  generator  (pbw)  PAG 1  (8.0)  PAG 2  (8.0)  PAG 3  (8.0)  PAG4  (8.0)  PAG 5  (8.0)  PAG 6  (8.0)  PAG 7  (8.0)  PAG 12  (10.0)  PAG 13  (10.0)  PAG 14  (10.0)  PAG 15  (10.0)  PAG 2  (8.0)  C-PAG 1  (8.0)  C-PAG 2  (8.0)  C-PAG 3  (8.0)  C-PAG 1  (8.0)  Quencher  (pbw)  PEB  Water-repellent polymer  Organic solvent  temp. Sensitivity LWR  (pbw)  (pbw)  (" C.)  (mJ/cm 2 )  (nm)  Quencher 1  Water-repellent polymer 1  PGMEA (2,200)  95  24  3.1  (4.50)  (4.0)  GBL (300)  Quencher 1  Water-repellent polymer 1  PGMEA (2,200)  95  25  3.2  (4.50)  (4.0)  GBL (300)  Quencher 1  Water-repellent polymer 1  PGMEA (2,200)  105  34  3.2  (4.50)  (4.0)  GBL (300)  Quencher 1  Water-repellent polymer 1  PGMEA (2,200)  95  44  2.8  (4.50)  (4.0)  GBL (300)  Quencher 1  Water-repellent polymer 1  PGMEA (2,200)  95  34  3.3  (4.50)  (4.0)  GBL (300)  Quencher 1  Water-repellent polymer 1  PGMEA (2,200)  95  31  3.1  (4.50)  (4.0)  GBL (300)  Quencher 1  Water-repellent polymer 1  PGMEA (2,200)  95  38  3.0  (4.50)  (4-0)  GBL (300)  Quencher 1  Water-repellent polymer 1  PGMEA (2,200)  95  34  2.8  (4.50)  (4.0)  GBL (300)  Quencher 1  Water-repellent polymer 1  PGMEA (2,200)  95  33  2.7  (4.50)  (4.0)  GBL (300)  Quencher 1  Water-repellent polymer 1  PGMEA (2,200)  95  32  2.6  (4.50)  (4.0)  GBL (300)  Quencher 1  Water-repellent polymer 1  PGMEA (2,200)  95  33  2.7  (4.50)  (4.0)  GBL (300)  Quencher 1  Water-repellent polymer 2  PGMEA (2,200)  100  36  2.1  (4.50)  (4-0)  GBL (300)  Quencher 1  Water-repellent polymer 1  PGMEA (2,200)  95  37  4.3  (4.50)  (4.0)  GBL (300)  Quencher 1  Water-repellent polymer 1  PGMEA (2,200)  95  38  4.6  (4.50)  (4.0)  GBL (300)  Quencher 1  Water-repellent polymer 1  PGMEA (2,200)  95  38  4.1  (4.50)  (4-0)  GBL (300)  Quencher 1  Water-repellent polymer 2  PGMEA (2,200)  100  42  6.0  (4.50)  (4-0)  GBL (300)  Water-Repellent Polymers  1  and  2  Water-repellent polymer 1  Mw~ 8,900  Mw/Mn~ 1.96  Water-repellent polymer 2  Mw ~S,300  Mw/Mn~ 1.84  ArF Immersion Lithography Patterning Test  Examples 1-1 to 1-12 and Comparative Examples  1-1 to 1-4 