FIG. 3: Bias dependence of the DC current and current noise of the nanotube transistor in the metallic state ( V$_{g}$ ≤ 0). The intrinsic nanotube shot noise S$_{I}$ is deduced by fitting the raw noise spectra (inset) with a A + B/f 2 law (solid lines) and subtracting a ( B/f $^{2}$) Lorenzian tail for the environment noise which contributes below 0 . 5 GHz and the white noise ( S$_{I}$/V$_{d}$ ≃ 1 . 1 (pA) $^{2}$V $^{$_{−}$1}$) of the 200 Ohm bias resistance, which is independently measured at the pinch-off. Accurate shot noise data, in the 0 . 1–0 . 8 GHz band, are plotted in the main panel as function of bias voltage for comparison with DC current. We observe full shot-noise ( S$_{I}$/ 2 e ≃ I$_{d}$ ) for V$_{d}$ > − 0 . 4 V and a noise saturation for V$_{d}$ < − 0 . 4 V. 10