excellent pattern shape, and low line edge roughness (LER)  are satisfied at the same time.  US 9,904,167 B2  2  1  COMPOUND, ACTIVE LIGHT SENSITIVE  OR RADIATION SENSITIVE RESIN  COMPOSITION, RESIST FILM USING  SAME, RESIST-COATED MASK BLANK,  PHOTOMASK, PATTERN FORMING  METHOD, METHOD FOR  MANUFACTURING ELECTRONIC DEVICE,  AND ELECTRONIC DEVICE  CROSS REFERENCE TO RELATED  APPLICATION  BACKGROUND OF THE INVENTION  This is a continuation of International Application No.  PCT/JP2014/065498 filed on Jun. 11, 2014, and claims  priority from Japanese Patent Application No. 2013-145015  filed on Jul. 10, 2013 and Japanese Patent Application No.  2014-026904 filed on Feb. 14, 2014, the entire disclosures of  which are incorporated herein by reference.  Another object of the present invention is to provide a  resist film using the active light sensitive or radiation  sensitive resin composition described above, a resist-coated  mask blank, a photomask, a pattern forming method, a  method for manufacturing an electronic device, and an  electronic device.  As a result of intensive research, the present inventors  found that the objects described above were achieved using  an active light sensitive or radiation sensitive resin compo› sition which contains a compound with a specific structure.  That is, the present invention is as follows.  [1] An active light sensitive or radiation sensitive resin  composition including a compound (A) represented by Gen› eral Formula  (I)  or (II) below,  1.  Field of the Invention  The present invention relates to a compound, an active  light sensitive or radiation sensitive resin composition, a  resist film using the same, a resist-coated mask blank, a  photomask, a pattern forming method, a method for manu› facturing electronic device, and an electronic device, which  are suitable for use in super-micro lithographic processes  and other fabrication processes such as for manufacturing  super LSis or high capacity microchips and are capable of  forming a high-definition pattern using electron beams or  extreme ultraviolet light.  2. Description of the Related Art  In fine processing using resist compositions, there is an  increasing demand to form ultrafine patterns as the integra› tion of integrated circuits increases. Therefore, exposure  wavelengths have been shortened with the light for exposure  being changed from the g-line to the i-line, and then to  excimer laser light and, currently, for example, the lithog- raphy techniques using electron beams are being developed.  Resist films subjected to exposure with excimer laser light  or electron beams are usually formed of chemical amplified  resist compositions. Various compounds are being devel› oped as photoacid generators which are the main constituent  components of the chemical amplified resist compositions.  For example, techniques in which a sulfonium salt having a  specific structure is used as a photoacid generator in order to  form a favorable pattern are known (for example, refer to  JP2010-155824A and JP2012-168502A).  However, from the viewpoint of the overall performance  as a resist, finding an appropriate combination of the resin,  the photoacid generator, the basic compound, the additives,  the solvent, and the like to be used is difficult, in particular,  in consideration of the current demand for forming ultrafine  (for example, a line width of 50 nm or less) patterns with  high resolution (for example, high resolving power), excel- lent pattern shape, and low line edge roughness (LER), there  is room for improvement in practice.  An object of the present invention is to provide a com› pound and an active light sensitive or radiation sensitive  resin composition which are able to form ultrafine (for  example, a line width of 50 nm or less) patterns in a state in  which high resolution (for example, high resolving power),  SUMMARY OF THE INVENTION  (1)  R11  ~ $_{B1 }$ I  Ar  I  (OH)m1  [ 6] The active light sensitive or radiation sensitive resin  composition according to [5], in which the compound (B) is  a resin which has a repeating unit represented by General  Formula (1) below,  [5] The active light sensitive or radiation sensitive resin  composition according to any one of [1] to [4], further  including a compound (B) which has a phenolic hydroxyl  group.  [ 4] The active light sensitive or radiation sensitive resin  composition according to any one of [1] to [3], in which, in  General Formula  (I)  or (H), Y$_{1 }$ or Y$_{2 }$ is an aryl group or a  monovalent hydrocarbon group which has an alicyclic  hydrocarbon structure having 5 or more carbon atoms.  [3] The active light sensitive or radiation sensitive resin  composition according to [1], in which, in General Formula  (I)  or (II), X$_{1 }$or X$_{2 }$ is a group which is represented by-S-.  [2] The active light sensitive or radiation sensitive resin  composition according to [1], in which, in General Formula  (I)  or (II), X$_{1 }$ or X$_{2 }$ is a group which is represented by  -NH- or -NR 1 -.  (in the formulae, each ofY $_{1 }$and Y $_{2 }$ represents a monovalent  organic group; each of M$_{1 }$ +  and M$_{2 }$ +  represents an organic  onium ion; each of X$_{1 }$ and X$_{2 }$ represents a group which is  represented by -S-, -NH-, or -NR  1  -; R  $^{1 }$represents  a monovalent organic group; each of nl and n2 represents an  integer of 1 or more; and R  1  and Y $_{1 }$ or Y $_{2 }$ may bond with  each other to form a ring).  (I)  (II) 