US 2020/0117085 Al  5  Apr. 16, 2020  -continued  ccco  ~  [0056]  The resin may have a weight average molecular  weight of about 500 to about 20,000.  [0057]  The resin may be included in an amount of about  0.1 wt% to about 50 wt% based on a total amount of the  semiconductor resist composition.  [0058]  When the resin is included within these amount  ranges, excellent ( or suitable) etch resistance and heat resis› tance may be obtained.  [0059]  In one or more embodiments, the semiconductor  resist composition according to an embodiment may include  the organometallic compound, the solvent, and the resin.  However, the semiconductor resist composition according to  the embodiment is not limited thereto and may further  include additives as needed. Non-limiting examples of the  additives may include a surfactant, a cross-linking agent, a  leveling agent, or a combination thereof.  [0060]  The surfactant may include, for example, an alkyl  benzene sulfonate salt, an alkyl pyridinium salt, polyethyl› ene glycol, a quaternary ammonium salt, and/or the like, but  is not limited thereto.  [0061]  The cross-linking agent may be, for example, a  melamine-based, substituted urea-based, or a polymer-based  cross-linking agent, but is not limited thereto. In an embodi› ment, the cross-linking agent may have at least two cross› linking forming substituents, for example, the cross-linking  agent may be a compound such as methoxymethylated  glycoluril, butoxymethylated glycoluril, methoxymethyl› ated melamine, butoxymethylated melamine, methoxymeth› ylated benzoguanamine,  butoxymethylated benzoguan› amine, methoxymethylated urea, butoxymethylated urea,  methoxymethylated thiourea, and/or the like.  [0062]  The leveling agent may be used for improving  coating flatness during printing and may be any suitable  leveling agent.  [0063]  A use amount of the additives may be controlled  depending on desired properties.  [0064]  In some embodiments, the semiconductor resist  composition may further include a silane coupling agent as  an adherence enhancer, in order to improve a close-contact› ing force with the substrate (e.g., to improve the adherence  of the semiconductor composition to the substrate). The  silane coupling agent may be, for example, a silane com› pound including a carbon-carbon unsaturated bond (such as  vinyltrimethoxysilane, vinyltriethoxysilane, vinyl trichlo› rosilane, and/or vinyltris(p-methoxyethoxy)silane), 3-meth- acryloxypropyltrimethoxysilane,  3-acryloxypropylt- rimethoxysilane,  p-styryl  trimethoxysilane,  3-methacryloxypropy lmethy ldimethoxysilane, 3-methacry› loxypropy lmethy l  diethoxysilane,  trimethoxy[3-(phe› nylamino)propyl]silane, and/or the like, but is not limited  thereto.  [0065]  The semiconductor resist composition may be  formed into a pattern having a high aspect ratio without a  collapse (or with a significantly reduced risk of collapse).  For example, in order to form a fine pattern having a width  of, for example, about 5 nm to about 100 nm, about 5 nm to  about 80 nm, about 5 nm to about 70 nm, about 5 nm to  about 50 nm, about 5 nm to about 40 nm, about 5 nm to  about 30 nm, or about 5 nm to about 20 nm, the semicon› ductor resist composition may be used for a photoresist  process using light in a wavelength ranging from about 5 nm  to about 150 nm, for example, about 5 nm to about 100 nm,  about 5 nm to about 80 nm, about 5 nm to about 50 nm,  about 5 nm to about 30 nm, or about 5 nm to about 20 nm. 