USO 106061 72B2  (IO)  Patent No.:  US 10,606,172 B2  (45)  Date of Patent:  Mar.31,2020  c12)  United States Patent  Hatakeyama et al.  (54)  RESIST COMPOSITION AND PATTERNING  PROCESS  220138  (2013.01);  C08F  222114  (2013.01);  C08F  222116  (2013.01);  C08F  222118  (2013.01);  C08F  222120  (2013.01);  C08F  222124  (2013.01);  C08F  224100  (2013.01);  C08F  228102  (2013.01);  G03F  710046  (2013.01);  G03F  710382  (2013.01);  G03F  710397  (2013.01);  G03F  71162  (2013.01);  G03F  71168  (2013.01);  G03F  712004  (2013.01);  G03F  712006  (2013.01);  G03F  712037  (2013.01);  G03F  712041  (2013.01);  G03F  71322  (2013.01);  G03F  71325  (2013.01);  G03F  7138  (2013.01);  C08F  2220/281  (2013.01);  C08F 2220/282  (2013.01);  C08F 2220/283  (2013.01);  C08F  2220/301  (2013.01);  C08F 2220/302  (2013.01);  C08F 2220/382  (2013.01)  (58)  Field of Classification Search  CPC .... G03F 7/0045; G03F 7/0382; G03F 7/0397;  G03F 7/38; C08F 220/16; C08F 220/20;  C08F 220/22; C08F 220/24; C08F  220/26; C08F 220/28; C08F 2220/281;  C08F 2220/282; C08F 2220/283; C08F  2220/301; C08F 2220/302; C08F 220/38;  C08F 2220/382; C08F 222/14; C08F  222/16; C08F 222/18; C08F 222/20;  C08F 222/24; C08F 224/00; C08F  228/02; C07C 69/635; C07C 303/32;  C07C 309/04; C07C 309/06; C07C  309/07; C07C 309/39  USPC ...................................... 430/270.1, 325, 326  See application file for complete search history.  (71)  Applicant:  SHIN-ETSU CHEMICAL CO., LTD.,  Tokyo (JP)  (72)  Inventors:  Jun Hatakeyama,  Joetsu (JP);  Masaki  Ohashi,  Joetsu (JP)  (73)  Assignee:  SHIN-ETSU CHEMICAL CO., LTD.,  Tokyo (JP)  ( * )  Notice:  Subject to any disclaimer, the term ofthis  patent is extended or adjusted under 35  U.S.C. 154(b) by 45 days.  (21)  Appl. No.:  15/920,746  (22)  Filed:  Mar. 14, 2018  (51)  Int. Cl.  (30)  Foreign Application Priority Data  (65)  Prior Publication Data  US 2018/0267403 Al  Sep. 20, 2018  Mar. 17, 2017  (JP) ................................. 2017-052391  G03F  71004  G03F  7138  G03F  71039  G03F  71038  G03F  7116  G03F  7132  G03F  7120  C08F  220120  C08F  220138  C08F  220116  C08F  222124  C08F  222114  C08F  220124  C08F  220126  C08F  222116  C08F  228102  C08F 222120  C08F 224100  C08F 220128  C08F 220122  C08F 222118  C07C 309/04  C07C 309/39  C07C 303132  C07C 309/06  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (Continued)  OTHER PUBLICATIONS  Wang et  al., "Photobase generator and photo decomposable quencher  for high-resolution photoresist applications", Pro. of SPIE, (2010),  vol. 7639, pp. 46390W, w/EnglishAbstract, (Cited in Specification),  (15pages).  Primary Examiner  - John S Chu  (74)  Attorney, Agent, or Firm  - Westerman, Hattori,  Daniels & Adrian, LLP  (Continued)  (52)  U.S. Cl.  CPC ..........  G03F 710045  (2013.01);  C07C 69/635  (2013.01);  C07C 303132  (2013.01);  C07C  309/04  (2013.01);  C07C 309/06  (2013.01);  C07C 309107  (2013.01);  C07C 309/39  (2013.01);  C08F 220116  (2013.01);  C08F  220120  (2013.01);  C08F 220122  (2013.01);  C08F 220124  (2013.01);  C08F 220126  (2013.01);  C08F 220128  (2013.01);  C08F  (57)  ABSTRACT  18 Claims, No Drawings  A resist composition comprising a base polymer and a  quencher in the form of an iodonium salt capable of gener› ating fluorobenzoic acid bonded to iodized benzene offers a  high sensitivity and minimal LWR independent of whether  it is of positive or negative tone.  FOREIGN PATENT DOCUMENTS  (56)  References Cited  U.S. PATENT DOCUMENTS  (Continued)  6,551,758 B2  *  4/2003 Ohsawa ................ C07C 309/42  6,673,511 Bl  1/2004 Hatakeyama et al.  430/270.1  JP  JP  2001-194776 A  2002-226470  A  7/2001  8/2002 