2  US 9,551,933 B2  1  ACTINIC RAY-SENSITIVE OR  RADIATION-SENSITIVE RESIN  COMPOSITION, RESIST FILM, USING THE  SAME, PATTERN FORMING METHOD,  MANUFACTURING METHOD OF  ELECTRONIC DEVICE, AND ELECTRONIC  DEVICE  CROSS REFERENCE TO RELATED  APPLICATION  TECHNICAL FIELD  SUMMARY OF INVENTION  BACKGROUND ART  This is a continuation of International Application No.  PCT/JP2013/070833 filed on Jul. 25, 2013, and claims  priority from Japanese Patent Application No. 2012-167814  filed on Jul. 27, 2012, and Japanese Patent Application No.  2013-054400 filed on Mar. 15, 2013 the entire disclosures of  which are incorporated therein by reference.  acetal-type protective group is disclosed, and it is stated that  according to this composition, the resolution, sensitivity and  the like are improved.  In the positive image forming method, an isolated line or  dot pattern can be successfully formed using this composi› tion, but in the case of forming an isolated space or fine hole  pattern, the pattern profile is liable to deteriorate.  In addition, a pattern forming method using an organic  solvent-containing developer ( organic developer) is also  being developed recently (see, for example, JP-A-2010- 217884). This method is supposed to enable stable formation  of a high-definition fine pattern.  Furthermore, in recent years, the need for formation of a  finer isolated space pattern or micronization of a hole pattern  is abruptly increasing, as a result, in the case of forming a  fine isolated space pattern having a space width of 100 nm  or less, more performance improvement in terms of sensi› tivity, resolution and space width roughness is demanded.  Similarly, in the case of forming a hole pattern having a fine  hole diameter (for example, 50 nm or less), more perfor- mance improvement in terms of high resolution, good expo› sure latitude (EL) and local pattern dimension uniformity  (Local-CDU) is demanded.  An object of the present invention is to provide an actinic  ray-sensitive or radiation-sensitive resin composition ensur› ing that in the case of forming a fine isolated space pattern  with a space width of 100 nm or less, the sensitivity,  resolution and space width roughness performance are  excellent and in the case of forming a hole pattern having a  fine hole diameter (for example, 50 nm or less), high  resolution, good EL and excellent local pattern dimension  uniformity (Local-CDU) are achieved, a resist film using the  same, a pattern forming method, a manufacturing method of  an electronic device, and an electronic device.  [1] An actinic ray-sensitive or radiation-sensitive resin com› position comprising:  (A) a resin containing a repeating unit represented by the  following formula (1-1) and a repeating unit represented by  the following formula (1-2),  wherein the content of the repeating unit represented by  the following formula (1-1) is 35 mo!% or more based on  all repeating units in the resin (A):  In the process for producing a semiconductor device such  as IC and LSI, microfabrication by lithography using a  photoresist composition has been conventionally performed.  Recently, with the increase in integration of an integrated  circuit, formation of an ultrafine pattern in the sub-micron or  quarter-micron region is required. To cope with this require› ment, the exposure wavelength also tends to become shorter,  for example, from g line to i line or further to KrF excimer  laser light. At present, other than the excimer laser light,  development of lithography using an electron beam, an  X-ray or EUV light is also proceeding.  Such electron beam, X-ray or EUV light lithography is  positioned as a next-generation or next-next-generation pat› tern formation technology, and a high-sensitivity and high› resolution resist composition is being demanded.  In particular, for shortening the wafer processing time,  elevation of sensitivity is an important task, but when higher  sensitivity is pursued, this causes deterioration in the pattern  profile or the resolution represented by the limiting resolu› tion line width, and development of a resist composition  satisfying all of these characteristics at the same time is  strongly demanded.  High sensitivity is in a trade-off relationship with high  resolution and good pattern profile, and it is important how  to satisfy all of these properties at the same time.  In order to solve such a problem, for example, in JP-A- 8-101507 (the term "JP-A" as used herein means an "unex- amined published Japanese patent application"), JP-A-2000- 29215, a positive resist composition using a resin having an  wherein in formula (1-1 ),  R$_{1 }$ represents an alkyl group or a cycloalkyl group,  R$_{2 }$ represents an alkyl group or a cycloalkyl group,  The present invention relates to an actinic ray-sensitive or  radiation-sensitive resin composition, a resist film using the  same, a pattern forming method, a manufacturing method of $^{20}$ an electronic device, and an electronic device. More spe- 25  cifically, the present invention relates to an actinic ray› sensitive or radiation-sensitive resin composition suitably  used in the ultramicrolithography process applicable to, for  example, a process for producing VLSI or a high-capacity  microchip, a process for fabricating a nanoimprint mold, and  30  a process for producing a high-density information record› ing medium, as well as in other photofabrication processes,  a resist film using the same, a pattern forming method, a  manufacturing method of an electronic device, and an elec› tronic device.  35  (1-1)  (1-2) 