US 2016/0223905 Al  76  Aug. 4, 2016  -continued  N-2  N-3  N-4  pattern exposure through an exposure mask, using a KrF  excimer laser scanner (NA 0.80). Thereafter, the wafer was  baked (post exposure bake (PEB)) at 100°  C. for 60 seconds,  developed using an aqueous tetramethylammonium hydrox› ide solution (2.38% by mass) for 60 seconds, rinsed with pure  water, and then spin-dried. Thus, an isolated space pattern  having a space of 140 nm and a pitch of 1,650 nm was  obtained.  [0761]  (Depth of Pocus; DOF)  [0762]  The exposure dose and the focus for forming an  isolated space pattern having a space of 140 nm and a pitch of  1,650 nm were defined as an optimal exposure dose and an  optimal focus, respectively, and the width of focus which  allowed the pattern size to be 140 nm–10% when the focus  was changed ( defocused) while keeping the exposure dose at  the optimal exposure dose was determined. Higher values  indicate that the change in performance due to a change in the  focus is smaller and the depth of focus (DOF) is better.  [0763]  (Exposure Latitude; EL)  [0764]  The exposure dose for forming the isolated space  pattern having a space of 140 nm and a pitch of 1,650 nm was  defined as an optimal exposure dose, and the exposure dose  width which allowed the pattern size to be 140 nm– 10% when  the exposure dose was changed was determined. This value  was divided by the optimal exposure dose, and the resultant  value was expressed in a percentage. Higher values indicate  that the change in performance due to a change in the expo› sure dose is smaller and the exposure latitude (EL) is better.  What is claimed is:  1.  An active light-sensitive or radiation-sensitive resin  composition comprising:  [0746]  In Table 5, the surfactants which are additives are as  follows.  [0747]  W-1: Megaface F176 (manufactured by DIC Cor› poration) (fluorine-based),  [0748]  W-2: Megaface ROS (manufactured by DIC Corpo› ration) (fluorine-based and silicon-based),  [0749]  W-3: Polysiloxane polymer KP-341 (manufactured  by Shin-Etsu Chemical Co., Ltd.) (silicon-based), and  [0750]  W-4: Compound having the following structure.  [0751]  In Table 5, the solvents are as follows.  [0752]  S-1: Propylene glycol monomethyl ether acetate  (PGMEA)  [0753]  S-2: y-Butyrolactone  [0754]  S-3: Cyclohexanone  [0755]  S-4: Propylene glycol monomethyl ether(PGME)  [0756]  S-5: Ethyl lactate  [0757]  S-6: EEP (ethyl 3-ethoxypropionate)  [0758]  <Evaluation>  [0759]  (Pattern Formation)  [0760]  The resist composition prepared above was coated  on an Si substrate (manufactured by Advanced Materials  Technology) which had been subjected to a hexamethyldisi› lazane treatment while not providing an antireflection layer  thereon, and baked (pre bake) at 100°  C. for 60 seconds to  form a resist film having a film thickness of 700 nm. The  wafer having the resist film formed thereon was subjected to  7.  The active light-sensitive or radiation-sensitive resin  composition according to claim  1,  wherein the compound (C)  is a compound having two or more ether bonds.  6.  The active light-sensitive or radiation-sensitive resin  composition according to claim  1,  wherein the compound (C)  is a compound having four or more groups or bonds selected  from the group consisting of an ether bond, a hydroxyl group,  an ester bond, and a ketone bond.  5.  The active light-sensitive or radiation-sensitive resin  composition according to claim  1,  wherein the compound (C)  is a compound having three or more groups or bonds selected  from the group consisting of an ether bond, a hydroxyl group,  an ester bond, and a ketone bond.  4.  The active light-sensitive or radiation-sensitive resin  composition according to claim  1,  wherein the compound (C)  is a compound having two or more groups or bonds selected  from the group consisting of an ether bond, a hydroxyl group,  an ester bond, and a ketone bond.  3.  The active light-sensitive or radiation-sensitive resin  composition according to claim  1,  wherein the compound (C)  is a compound having eight or more carbon atoms.  2.  The active light-sensitive or radiation-sensitive resin  composition according to claim  1,  wherein the molecular  weight of the compound  (C) is from 200 to 3,000.  a resin (A);  a compound (B) capable of generating an acid upon irra› diation with active light or radiation; and  a compound (C) having at least one oxygen atom,  wherein a molecular weight of the compound  (C) is from  150 to 3,000, and  the resin (A) and the compound (B) are not included in the  compound  (C).  ~N~ 