unit cell in each direction, giving rise to a non-primitive unit cell consisting of 24 oxygen positions (8 octahedra). The oxygen positions are displaced from the ideal face-centered positions by the appropriate rotation angle. To calculate the intensity of a given peak, the relative volume of all possible structural domains ( D$_{j}$ ) is needed. When calculating the structure factor, these domains determine whether the octahedron nearest to the chosen origin rotates clockwise or counterclockwise about each axis. Within this tilt pattern there are four domains that give rise to different structure factors: one where α , β , and γ are all positive, and three where two of the angles are positive and the third is negative. The domain volume fractions are obtained from a set of symmetrically equivalent half-order peaks with fixed l , for instance ( ± 1 / 2 ± 1 / 2 3 / 2 ), the relative intensities of which depend directly on the domain populations. We employ standard non-linear regression analysis to determine the optimal values of α and γ and their respective errors. The films grown on cubic STO and rhombohedral LAO substrates exhibit different domain populations. In the LNO/STO film, we find an equal volume fraction of the four possible domains, indicating that the four domains are energetically equivalent when LNO is grown on a cubic substrate. In contrast the LNO/LAO film shows unequal domain populations between only two domains with an approximate 1:2 ratio. To explain this difference, we note that our LAO substrates contain extensive twinning, which we observed as two distinct peaks in ω -scans rocked about a (0 0 l ) peak. For our LAO substrate the ratio of the two peaks is also 1:2 suggesting that the octahedral rotations and domain pattern of the substrate are transferred to the film. Since the rhombohedral distortion determines the trigonal axis about which the octahedra rotate in bulk LAO, this result demonstrates that substrates may be used to texture octahedral rotations by choosing appropriate substrate orientations. Heteroepitaxy therefore affords an additional mechanism by which epitaxial thin film growth can be used to engineer the physical properties of complex oxides. Additionally, imprinting of rotational behavior may play an important role in the interfacial properties of oxides. For LNO on STO, we obtain α = β = 7 . 1 ± 0 . 2 ◦ and γ = 0 . 3 ± 0 . 7 $^{◦}$. The measured and calculated intensities are given in Fig. 2c. For LNO on LAO, we obtain α = β = 1 . 7 ± 0 . 2 ◦ and γ = 7 . 9 ± 0 . 9 $^{◦}$; the peak intensities are provided in Fig. 2d. Knowing the tilt angles, and thus the oxygen positions, the atomic structures are obtained (Fig. 3). As anticipated, the epitaxial strain strongly modifies the in-plane (equatorial) Ni-O bond lengths ( d$_{Ni}$$_{−}$$_{O}$ ) due to coherency across the heterointerface. The in-plane d$_{Ni}$$_{−}$$_{O}$ decreases 6