Jul. 4, 2019  68  US 2019/0204738 Al  [0656]  <Preparation of Resist Composition>  [0657]  Respective components listed in Table 3 were  mixed so as to be dissolved, thereby preparing resist com- positions of each example.  [0658]  In Table 3, each abbreviation has the following  meaning. The numerical values in the parentheses are blend› ing amounts (parts by mass).  [0671]  Using the LS pattern formed in the section of the  "formation of resist pattern", the  3a  which is the scale that  indicates the LWR was acquired. The  "3a"  indicates three  times  (3a)  (unit: nm) the standard deviation  (a)  acquired  based on the result of measurement performed by measuring  400 sites ofline positions in the longitudinal direction of the  line using a scanning electron microscope (trade name:  S-9380, manufactured by Hitachi High-Technologies Cor› poration, accelerating voltage of 800 V). In a case where the  value of the  3a  is small, this indicates that the roughness of  a line side wall is small and an LS pattern with a uniform  width is obtained.  [0670]  The limit resolution in the Eop, specifically, the  minimum dimension of a pattern to be resolved without  collapsing while the exposure amount from the optimum  exposure amount Eop was increased to form an LS pattern  was acquired using a scanning electron microscope S-9380  (manufactured by Hitachi High-Technologies Corporation).  The results are listed in Table 4.  [0669]  [Evaluation of Resolution]  [0668]  An  optimum exposure amount Eop (µC/cm 2 )  at  which the LS pattern with a target size was formed accord› ing to the method of forming a resist pattern was acquired.  The results are listed in Table 4.  [0667]  [Evaluation of Optimum Exposure Amount (Eop)]  [0666]  An  8-inch silicon substrate to which a hexameth› yldisilazane (HMDS) had been applied was coated with the  resist composition of each example using a spinner, and a  prebake (PAB) treatment performed thereon on a hot plate at  a temperature of 110°  C. for 60 seconds so that the hot plate  was dried to form a resist film having a film thickness of 30  nm. Next, drawing (exposing) was performed on the resist  film at an accelerating voltage of 100 kV such that the target  size was set to a line width of 50 mm and 1: 1 line and space  pattern (hereinafter, referred to as an "LS pattern") using an  electron beam lithography  device  JEOL-JBX-9300FS  (manufactured by JEOL Ltd.), and a post exposure bake  (PEB) treatment was performed thereon at 110°  C. for 60  seconds. Subsequently, alkali development was performed  at 23°  C. for 60 seconds using a 2.38 mass % tetramethyl› ammonium hydroxide (TMAH) aqueous solution "NMD-3"  (trade name, manufactured by TOKYO OHKA KOGYO  CO., LTD.), and water rinsing was performed for 15 seconds  using pure water. As the result, a 1: 1 LS pattern with a line  width of 50 nm was formed.  [0665]  [Formation of Resist Pattern]  [0664]  A resist pattern was formed using each of the  obtained resist compositions, and the sensitivity (Eop ), the  resolution, and LWR were respectively evaluated in the  following manners.  [0663]  <Evaluation of Resist Composition>  -continued  TABLE 3  [0659]  (A)-1 to (A)-12: polymers Pl to P12 described  above  [0660]  (B)-1: acid generator represented by Chemical  Formula (B)-1  [0661]  (D)-1: acid diffusion control agent represented  by Chemical Formula (D)-1  [0662]  (S)-1: mixed solution obtained by mixing pro› pylene glycol monomethyl ether acetate and propylene  glycol monomethyl ether at mass ratio of 6:4  (B)-1  F2  t?  0  /cyo  03S  0  O--S02  Component  Component  Component  Component  (A)  (B)  (C)  (D)  Example 1  (A)-1  (B)-1  (D)-1  (S)-1  [100]  [18.8]  [6.8]  [12400]  Example 2  (A)-2  (B)-1  (D)-1  (S)-1  [100]  [18.8]  [6.8]  [12400]  Example 3  (A)-3  (B)-1  (D)-1  (S)-1  [100]  [18.8]  [6.8]  [12400]  Example 4  (A)-4  (B)-1  (D)-1  (S)-1  [100]  [18.8]  [6.8]  [12400]  Example 5  (A)-5  (B)-1  (D)-1  (S)-1  [100]  [18.8]  [6.8]  [12400]  Example 6  (A)-6  (B)-1  (D)-1  (S)-1  [100]  [18.8]  [6.8]  [12400]  Example 7  (A)-7  (B)-1  (D)-1  (S)-1  [100]  [18.8]  [6.8]  [12400]  Example 8  (A)-8  (B)-1  (D)-1  (S)-1  [100]  [18.8]  [6.8]  [12400]  Comparative  (A)-9  (B)-1  (D)-1  (S)-1  Example 1  [100]  [18.8]  [6.8]  [12400]  Comparative  (A)-10  (B)-1  (D)-1  (S)-1  Example 2  [100]  [18.8]  [6.8]  [12400]  Comparative  (A)-11  (B)-1  (D)-1  (S)-1  Example 3  [100]  [18.8]  [6.8]  [12400]  Comparative  (A)-12  (B)-1  (D)-1  (S)-1  Example 4  [100]  [18.8]  [6.8]  [12400]  (D)-1 