The abbreviations appearing in the Tables have the follow- ing meanings.  [ Acid Generator]  [Basic Compound]  (Exposure Condition 1: EB Exposure) Examples 1 to  37 and Comparative Examples 1 to 7  Each of the prepared radiation-sensitive resin composi› tions was uniformly applied onto a silicon substrate having  undergone hexamethyldisilazane treatment by means of a  spin coater, and dried by baking on a hot plate at 120°  C. for  90 seconds. Thus, radiation-sensitive films each having a  thickness of 100 nm were formed.  Each of the formed radiation-sensitive films was irradiated  with electron beams by means of an electron beam irradiating  apparatus (HL 750 manufactured by Hitachi, Ltd., accelera› tion voltage 50 KeV). The irradiated film was immediately  W-3: polysiloxane polymer (produced by Shin-Etsu  Chemical Co., Ltd., siliconized).  [Solvent]  Sl: propylene glycol monomethyl ether acetate (PGMEA),  S2: propylene glycol monomethyl ether (PGME), and  S3: ethyl lactate (EL).  W-2: Megafac ROS (produced by Dainippon Ink & Chemi› cals, Inc., fluorinated and siliconized), and  W-1: Megafac F176 (produced by Dainippon Ink &  Chemicals, Inc., fluorinated),  [Surfactant]  TOA: trioctylamine.  TBAH: tetrabutylammonium hydroxide, and  PAG2  (P-31)  Mw  ~  5000, Mw/Mn  ~  1.5  [Resin (P)]  Resins (P-1) to (P-30) are as defined hereinbefore.  Resin (P-31)  baked on a hot plate at 110°  C. for 90 seconds. The baked film  was developed with a 2.38 mass% aqueous tetramethylam› monium hydroxide solution at 23°  C. for 60 seconds, rinsed  with pure water for 30 seconds and dried. Thus, line and space  patterns were formed. The obtained patterns were evaluated  in the following manners.  274  US 9,052,590 B2  273  (Exposure Condition 2: EUV Exposure) Examples  38 to 49  Each of the prepared radiation-sensitive resin composi› tions was uniformly applied onto a silicon substrate having  undergone hexamethyldisilazane treatment by means of a  spin coater, and dried by baking on a hot plate at 120°  C. for  90 seconds. Thus, radiation-sensitive films each having a  thickness of 100 nm were formed.  Each of the formed radiation-sensitive films was irradiated  with EUV by means of an EUV exposure apparatus (manu› factured by Lithotec Japan Co., Ltd., wavelength 13 nm). The  irradiated film was immediately baked on a hot plate at 110°  C. for 90 seconds. The baked film was developed with a 2.38  mass % aqueous tetramethylammonium hydroxide solution  at 23 °  C. for 60 seconds, rinsed with pure water for 30 seconds  and dried. Thus, line and space patterns (line:space= 1: 1) were  formed. The obtained patterns were evaluated in the follow- ing manners.  <Evaluation of Resist>  [Sensitivity]  The configuration of a cross section of each of the obtained  patterns was observed by means of a scanning electron micro› scope (model S-9220, manufactured by Hitachi, Ltd.). The  sensitivity was defined as the minimum exposure energy at  which a 100 nm line (line:space=l:1) could be resolved.  [Resolving Power]  The resolving power was defined as a limiting resolving  power (line and space separated or resolved from each other)  under the amount of exposure exhibiting the above sensitiv› ity.  [Configuration of Pattern]  The configuration of a cross section of each 100 nm line  pattern formed under the amount of exposure exhibiting the  above sensitivity was observed by means of a scanning elec› tron microscope (model S-4300, manufactured by Hitachi,  Ltd.) The pattern configuration was evaluated into being rect- angular, slightly tapering and tapering on a 3-point scale.  [LER]  A 100 nm line pattern formed under the amount of expo› sure exhibiting the above sensitivity was observed by means  of a scanning electron microscope (model S-9220, manufac- tured by Hitachi, Ltd.). The distance between actual edge and  a reference line on which edges were to be present was mea› sured on arbitrary 30 points within 50 µmin  the longitudinal  direction of the pattern. The standard deviation of measured  distances was determined, and 30 was computed therefrom.  [Aging Stability of Resist]  Each of the compositions was stored at room temperature  for a month. The degree of storage anterior-posterior sensi› tivity change was evaluated. Sensitivity change (% )=[ abso› lute value of storage anterior-posterior sensitivity difference/  sensitivity before storage]xl00.  (Judgment Criteria)  o: when the sensitivity change was less than 15%, and  x: when the sensitivity change was 15% or greater.  [Etching Resistance]  A 200 nm thick positive resist film was formed on a wafer.  Plasma etching thereof was carried out using a mixed gas  consisting ofC$_{4}$ F $_{6 }$ (20 ml/min) and  0$_{2 }$ (  40 ml/min) at 23°  C. 