74  73  US 9,513,547 B2  obtained wafer using a KrF excimer laser scanner (NA 0.80)  via an exposure mask. Subsequently, developing was per› formed by paddling with the organic based developer shown  in Table 2 after baking (Post Exposure Bake; PEB) for 60  seconds at the temperatures shown in the following Table 2,  then, after rinsing was performed by paddling with the  rinsing liquid shown in Table 2, a line and space pattern with  lines of 400 nm and a pitch of 600 nm was obtained by  rotating the wafer for 30 seconds at a rotational speed of  4000 rpm.  as the optimum exposure amount, an exposure amount width  which allows a pattern size of 400 nm–10% when the  exposure amount is changed was determined, and this value  was displayed as a percentage by dividing with the optimal  exposure amount. The higher the value, the smaller the  performance variations due to changes in exposure amount,  whereby the exposure latitude (EL) becomes favorable.  Evaluation Method (Execution Method on Flat Substrate)  The resist composition was coated on a silicon wafer  where a hexamethyldisilazane (HMDS) process was per› formed under conditions of 110°  C. for 35 seconds without  providing an antireflection layer, baking (PreBake; PB) was  performed for 60 seconds at the temperatures shown in the  following Table 2, and a resist film with a film thickness of  200 nm was formed. Pattern exposure was performed on the  obtained wafer using a KrF excimer laser scanner (NA 0.80)  via an exposure mask. Subsequently, developing was per› formed by paddling with the developer after baking (Post  Exposure Bake; PEB) for 60 seconds at the temperatures  shown in the following Table 2, then, after rinsing was  performed by paddling with the rinsing liquid, a line and  space pattern with lines of 400 nm and a pitch of 600 nm was  obtained by rotating the wafer for 30 seconds at a rotational  speed of 4000 rpm.  Evaluation Method (Standing Wave)  A cross-sectional shape of the lines of the line and space  pattern with lines of 400 nm and a pitch of 600 nm was  observed and the degree of standing waves was evaluated  using five levels. In a case where the line width in the portion  where the line width is the narrowest due to the influence of  the standing waves is set as a and the line width of the  portion where reduction in the line width is not seen is set  as b, evaluation was performed using the ratio (referred to as  "ratio C" below with the units in "%") represented by  { (b-a)/b }xl 00. The smaller the value, the smaller the degree  of the standing waves, which is preferable.  (Determining Criteria)  Evaluation Method (Shape of Uneven Substrate)  A cross-sectional shape of the lines of the line and space  pattern with lines of 400 nm and a pitch of 600 nm was  observed using a scanning electron microscope (S-4800  manufactured by Hitachi, Ltd.) and was evaluated as rect› angle, taper shape, or reverse taper shape. The shape of the  rectangle is most preferable.  Evaluation Method (Scum on Uneven Substrate)  In the line and space pattern with lines of 400 nm and a  pitch of 600 nm, the dissolved resist (scum) remaining in the  groove portions on the uneven substrate was observed at a  cross-section, and the level of scum was evaluated using five  levels. The lower the value, the better the scum performance.  (Determining Criteria)  A: cases where the height of the residue which is present in  the groove portion is 0% or more and less than 20% with  respect to the depth of the groove portion  B: cases where the height of the residue which is present in  the groove portion is 20% or more and less than 40% with  respect to the depth of the groove portion  C: cases where the height of the residue which is present in  the groove portion is 40% or more and less than 60% with  respect to the depth of the groove portion  D: cases where the height of the residue which is present in  the groove portion is 60% or more and less than 80% with  respect to the depth of the groove portion  E: cases where the height of the residue which is present in  the groove portion is 80% or more with respect to the depth  of the groove portion  Evaluation Method (EL in Pattern Forming on Uneven  Substrate)  The exposure amount which forms the line and space  pattern with lines of 400 nm and a pitch of 600 nm was set  A: cases where the ratio C is 0% or more and less than 20%  B: cases where the ratio C is 20% or more and less than 40%  C: cases where the ratio C is 40% or more and less than 60%  D: cases where the ratio C is 60% or more and less than 80%  E: cases where the ratio C is 80% or more  The above-described evaluation results are shown in the  following Table 2.  TABLE 2  Resist  Composition  Example-!  Resist-!  Example-2  Resist-2  Example-3  Resist-3  Example-4  Resist-4  Example-5  Resist-5  Example-6  Resist-6  Example-7  Resist-7  Example-8  Resist-8  Example-9  Resist-9  Example-IO  Resist-IO  Example-11  Resist-11  Rinsing  Standing  PB  PEB  Developer Liquid  Shape  Scum EL/% Waves  100° C.  100°  C.  ND-1  None  Rectangle  A  22  A  60 s  60 s  100° C.  100°  C.  ND-1  None  Rectangle  A  22  A  60 s  60 s  100° C.  110°  C.  ND-1  NR-1  Rectangle  A  19  B  60 s  60 s  100° C.  100°  C.  ND-1  None  Rectangle  A  19  A  60 s  60 s  100° C.  100°  C.  ND-1  NR-2  Rectangle  B  19  A  60 s  60 s  100° C.  100°  C.  ND-1  NR-2  Rectangle  B  17  C  60 s  60 s  100° C.  110°  C.  ND-2  NR-2  Rectangle  C  17  C  60 s  60 s  100° C.  100°  C.  ND-2  None  Rectangle  C  17  C  60 s  60 s  100° C.  110°  C.  ND-3  None  Rectangle  C  17  C  60 s  60 s  100° C.  110°  C.  ND-3  None  Rectangle  C  17  C  60 s  60 s  100° C.  100°  C.  ND-1  None  Rectangle  A  25  A  60 s  60 s 