2  US 9,829,796 B2  1  PATTERN FORMATION METHOD, ACTIVE  LIGHT-SENSITIVE OR  RADIATION-SENSITIVE RESIN  COMPOSITION, RESIST FILM,  PRODUCTION METHOD FOR ELECTRONIC  DEVICE USING SAME, AND ELECTRONIC  DEVICE  CROSS REFERENCE TO RELATED  APPLICATION  BACKGROUND OF THE INVENTION  SUMMARY OF THE INVENTION  This is a continuation of International Application No.  PCT/JP2014/066448 filed on Jun. 20, 2014, and claims  priority from Japanese Patent Application No. 2013-160616  filed on Aug. 1, 2013, the entire disclosures of which are  incorporated herein by reference.  which a pattern is formed by poorly solubilizing or insolu› bilizing the exposed portion with respect to an alkali devel› oper by exposure to radiation using a resin soluble in the  alkali developer.  As the active light-sensitive or radiation-sensitive resin  composition suitable for a lithography process using an  electron beam, X-rays, or EUV light, from the viewpoint of  high sensitivity, a chemical amplification positive resist  composition using mainly an acid catalytic reaction has been  considered, and a chemical amplification positive resist  composition consisting of a phenolic resin (hereinafter,  abbreviated as a phenolic acid decomposable resin) which is  insoluble or poorly soluble in an alkali developer, and has  properties of becoming soluble by the action of an acid, as  a main component, and an acid generator is effectively used.  On the other hand, in the production of a semiconductor  element or the like, formation of patterns having various  shapes such as a line, a trench, and a hole is required. To  meet the requirement for formation of patterns having  various shapes, development of not only a positive type  active light-sensitive or radiation-sensitive resin composi› tion but also a negative type active light-sensitive or radia› tion-sensitive resin composition has also been performed  (for example, refer to  JP2002-148806A and JP2008- 268935A).  In formation of an ultra fine pattern, reduction in resolving  power decrease and further improvement of the pattern  shape have been demanded.  To solve this problem, the use of a resin having a  photoacid generator on the polymer main chain or the side  chain has been studied (JP2010-85971A and JP2010- 256856A). In addition, a method of developing an acid  decomposable resin using a developer other than an alkali  developer (refer to JP2010-217884A and JP2011-123469A)  and a method of developing an acid decomposable resin  having an oxirane ring or an oxetane ring or an acid  decomposable resin having a substructure of an N-methylol  system using a developer other than an alkali developer  (refer to JP2013-11866A and JP2012-242556A) have also  been proposed.  However, with miniaturization of patterns in recent years,  in an ultra fine region (for example, a region having a line  width of 50 nm or less), a pattern formation method which  satisfies high sensitivity, high resolution, and film loss  reduction performance at the same time to a very high level  has been required, and there was still room for improvement  in the pattern formation methods in the related art.  Objects of the present invention are to solve the problems  in performance improvement techniques in fine processing  of a semiconductor element using active light or radiation,  and to provide a pattern formation method which satisfies  high sensitivity, high resolution (high resolving power, and  the like), high roughness performance, film loss reduction  performance, high exposure latitude, and high dry etching  resistance at the same time to a very high level in an ultra  fine region (for example, a region having a line width of 50  nm or less), an active light-sensitive or radiation-sensitive  resin composition, a resist film, a production method for an  electronic device using these, and an electronic device.  It was found that the above problems are achieved by the  following configurations.  The present invention relates to a pattern formation  method using a developer including an organic solvent,  which is suitably used in an ultra microlithography process  in producing an ultra LSI or a high-capacity microchip or  other photofabrication processes, an active light-sensitive or  radiation-sensitive resin composition, a resist film, a pro› duction method for an electronic device using these, and an  electronic device. In more detail, the present invention  relates to a pattern formation method using a developer  including an organic solvent, which can be suitably used in  fine processing of a semiconductor element using an elec› tron beam or EUV light (wavelength: around 13 nm), an  active light-sensitive or radiation-sensitive resin composi› tion, a resist film, a production method for an electronic  device using these, and an electronic device.  In the related art, fine processing by lithography using a  photoresist composition has been performed in the produc› tion process of semiconductor devices such as IC and LSI.  In recent years, with higher integration of integrated circuits,  ultra fine patterns have been required to be formed in a  sub-micron region or a quarter-micron region. Accordingly,  exposure wavelengths tend to be shortened, for example,  from g-line to i-line, and to a KrF excimer laser light.  Furthermore, at present, lithography using an electron beam,  X-rays, or EUV light, in addition to the excimer laser light,  is also being developed.  Lithography using an electron beam, X-rays, or EUV light  is positioned as a next generation or next after next genera› tion pattern forming technology, and a resist composition 50  having high sensitivity and high-resolution is desired.  In particular, for shortening the wafer processing time,  sensitivity improvement is a very important issue, but when  trying to improve sensitivity, the pattern shape or the resolv› ing power represented by the limit resolution line width 55  decreases, and therefore, development of a resist composi› tion which satisfies these properties at the same time has  been strongly desired.  High sensitivity, and high resolution and a favorable  pattern shape are in a trade-off relationship, and how to  satisfy these at the same time is very important.  In general, there are two types of the active light-sensitive  or radiation-sensitive resin composition, that is, a "positive  type" in which a pattern is formed by solubilizing the  exposed portion with respect to an alkali developer by  exposure to radiation using a resin poorly soluble or  insoluble in the alkali developer, and a "negative type" in  A pattern formation method including (1) forming a film  using an active light-sensitive or radiation-sensitive resin  [1]  1.  Field of the Invention  2. Description of the Related Art 