123  US 9,221,742 B2  124  TABLE 5-continued  Examples 2-1 to 2-20 and Comparative Examples  2-1 to 2-7  Resist Patterning by ArF Lithography 1  An antireflective coating solution (ARC-29A by Nissan  Chemical Industries, Ltd.) was coated onto a silicon substrate  and baked at 200°  C. for 60 seconds to form an ARC film of  100 nm thick. The resist solution in Table 5 was spin coated  onto the ARC and baked on a hot plate at 100°  C. for 60  seconds to form a resist film of 90 nm thick. The resist film  was exposed according to the ArF immersion lithography  using an ArF excimer laser seamier (model NSR-S610C,  Nikon Corp., NA 1.30, dipole illumination, Cr mask). The  resist film was baked (PEB) at 80°  C. for 60 seconds and  developed in a 2.38 wt % tetramethylanm10nium hydroxide  aqueous solution for 60 seconds.  Evaluation Method  The resist was evaluated by observing a 40-nm 1:1 line› and-space pattern under an electron microscope. The opti› mum dose (Eop) was a dose (mJ/cm 2 )  which provided a line  width of 40 nm. The profile of a pattern at the optimum dose  was compared and judged good or poor.  The width of lines of a 40-nm 1: 1 line-and-space pattern  was measured under SEM to determine a line width variation  (30 points measured,  3a  value computed), which was  reported as line width roughness (LWR). A smaller value of  LWR indicates a line pattern with a less fluctuation and of  better profile. In this test, the sample is rated good when LWR  is equal to or less than3.0nmand poorwhenLWRis equal to  or more than 3 .1 nm.  Defects in the pattern as developed were inspected by a  flaw detector KLA2800 (KLA-Tencor). A defect density  ( count/cm 2 )  was computed by dividing the total number of  detected defects by a detection area. The pattern formed was  an iterated 40-nm 1: 1 line-and-space pattern. The defect  inspection conditions included light source  UV,  inspected  pixel size 0.28  µm, and cell-to-cell mode. In this test, the  sample was rated good for a defect density of less than 0.05  defect/cm 2  and poor for a density of equal to or more than  0.05 defect/cm 2 .  The collapse limit was a minimum width (nm) of lines  which could be resolved without collapse when the line width  was reduced by increasing the exposure dose. A smaller value  indicates better collapse resistance.  The test results of the resist compositions are shown in  Table 6.  TABLE6  Resin  PAG  Quencher  Surfactant  Resist (pbw)  (pbw)  (pbw)  (pbw)  1-15  R-15  P-9(80) PAG-X(7.6)  Q-1(4.6)  SF-1(3.0)  1-16  R-16  P-10(80) PAG-X(7.6)  Q-1(4.6)  SF-1(3.0)  1-17  R-17  P-11(80) PAG-X(7.6)  Q-1(4.6)  SF-1(3.0)  1-18  R-18  P-12(80) PAG-X(7.6)  Q-1(4.6)  SF-1(3.0)  1-19  R-19  P-13(80) - Q-1(4.6)  SF-1(3.0)  1-20  R-20  P-14(80) - Q-1(4.6)  SF-1(3.0)  Comparative  1-1  R-21  P-1(80) PAG-X(7.6)  Q-A(l.7)  SF-1(3.0)  Example  1-2  R-22  P-1(80) PAG-X(7.6)  Q-B(3.4)  SF-1(3.0)  1-3  R-23  P-1(80) PAG-X(7.6)  Q-C(3.3)  SF-1(3.0)  1-4  R-24  P-1(80) PAG-X(7.6)  Q-D(3.7)  SF-1(3.0)  1-5  R-25  P-1(80) PAG-X(7.6)  Q-E(3.8)  SF-1(3.0)  1-6  R-26  P-1(80) PAG-X(7.6)  Q-F(3.7)  SF-1(3.0)  1-7  R-27  P-1(80) PAG-X(7.6)  Q-G(2.9)  SF-1(3.0)  Solvent 1  Solvent 2  (pbw)  (pbw)  PGMEA(l,728) GBL(192)  PGMEA(l,728) GBL(192)  PGMEA(l,728) GBL(192)  PGMEA(l,728) GBL(192)  PGMEA(l,728) GBL(192)  PGMEA(l,728) GBL(192)  PGMEA(l,728) GBL(192)  PGMEA(l,728) GBL(192)  PGMEA(l,728) GBL(192)  PGMEA(l,728) GBL(192)  PGMEA(l,728) GBL(192)  PGMEA(l,728) GBL(192)  PGMEA(l,728) GBL(192)  Example  2-1  2-2  2-3  2-4  2-5  2-6  2-7  2-8  2-9  2-10  2-11  2-12  2-13  2-14  2-15  2-16  2-17  2-18  2-19  2-20  Comparative  2-1  Example  2-2  2-3  2-4  2-5  Eop  Pattern  LWR Defect density Collapse limit  Resist  (mJ/cm 3 )  profile  (nm)  (count/cm 3 )  (nm)  R-1  35  rectangular  2.7  0.03  29  R-2  37  rectangular  2.9  0.02  30  R-3  35  rectangular  2.8  0.03  32  R-4  37  rectangular  3.0  0.03  32  R-5  36  rectangular  2.6  0.02  28  R-6  37  rectangular  2.8  0.02  30  R-7  37  rectangular  2.8  0.02  29  R-8  35  rectangular  2.9  0.03  28  R-9  35  rectangular  2.7  0.02  28  R-10  38  rectangular  3.0  0.04  33  R-11  32  rectangular  2.9  0.04  32  R-12  30  rectangular  2.6  0.02  28  R-13  31  rectangular  2.8  0.03  29  R-14  32  rectangular  2.8  0.04  29  R-15  40  rectangular  3.0  0.03  30  R-16  38  rectangular  2.8  0.02  28  R-17  38  rectangular  2.9  0.02  29  R-18  38  rectangular  3.0  0.04  32  R-19  48  rectangular  3.0  0.04  30  R-20  41  rectangular  2.8  0.04  28  R-21  38  poor, T-top  3.5  0.07  38  R-22  37  poor, some footing  3.4  0.07  40  R-23  34  poor, some footing  3.3  0.08  42  R-24  35  poor, some footing  3.1  0.06  36  R-25  33  poor, footing  3.2  0.06  38 