TABLE 1  78  US 10,005,868 B2  Acid  Basic  Organic  Polymer  generator  compound  Water-repellent  solvent  Resist  (part by  (part by  (part by  polymer  (part by  composition  mass)  mass)  mass)  (part by mass)  mass)  Example 1  Polymer 1  PAGl  Quencher 1  Water-repellent  PGMEA (2,000)  (100)  (6.5)  (4.0)  polymer 1 (5.0) GBL (250)  Example 2  Polymer 2  PAGl  Quencher 1  Water-repellent  PGMEA (2,000)  (100)  (6.5)  (4.0)  polymer 1 (5.0) GBL (250)  Example 3  Polymer 3  PAG2  Quencher 2  PGMEA (2,000)  (100)  (30)  (1.5)  GBL (250)  Example 4  Polymer 4  PAG2  Quencher 2  PGMEA (2,000)  (100)  (30)  (1.5)  GBL (250)  Example 5  Polymer 5  Quencher 2  PGMEA (500)  (100)  (1.5)  CyH (1,500)  Example 6  Polymer 6  Quencher 2  PGMEA (500)  (100)  (1.5)  CyH (1,500)  Comparative  Comparative  PAGl  Quencher 1  Water-repellent  PGMEA (2,000)  Example 1  polymer 1  (6.5)  (4.0)  polymer 1 (5.0) GBL (250)  (100)  Comparative  Comparative  Quencher 2  PGMEA (500)  Example 2  polymer 2  (1.5)  CyH (1,500)  (100)  ArF Exposure Evaluation  Spin-on carbon film ODL-102, manufactured by Shin› Etsu Chemical Co., Ltd., was formed on a silicon wafer with  a film thickness of 200 nm, and silicon-containing spin-on  hard mask SHB-A940 was formed thereon with a film  thickness of 35 nm to obtain a substrate for a tri-layer  process. On this substrate, the resist composition prepared  with the composition shown in Table 1 (Examples 1, 2, and  Comparative Example 1) was applied by spin coating and  then baked with a hot plate at a temperature shown in Table  2 for 60 seconds to form a resist film 90 nm thick.  5 (manufactured by Tokyo Electron, Ltd.). Then, the com- position was pre-baked on a hot plate at 110°  C. for 60  seconds to form a resist film with a thickness of 100 nm. To  this was drawn in a vacuum chamber with HL-S00D (manu› factured by Hitachi, Ltd.) with a HV voltage of 50 keV.  After drawing, PEB was performed at a temperature  shown in Table 3, by a manual hot plate to which the air  containing 25 g of moisture per kilogram of dry air at 40°  C.  (50% humidity) was supplied with a flow rate of2 Umin by  a precisely controlled humidity-supplying apparatus SRG› lR-AS, manufactured by Daiichikagaku Inc. Then, puddle  development was carried out with a 2.38 mass % TMAH  aqueous solution for 30 seconds to obtain a positive pattern.  The obtained resist pattern was evaluated in the following  manner.  These films were exposed to light by anArF excimer laser  liquid immersion scanner (NSR-610C, manufactured by  Nikon Corporation, NA=l.30, a=0.98/0.78, dipole opening  20°,  Azimuthally polarized illumination, 6% halftone phase  shift mask) with various exposure dose. After exposure,  baking (PEB) was performed at a temperature shown in  Table 2 by a manual hot plate to which the air containing 25  g of moisture per kilogram of  dry  air at 40° C. (50%  humidity) was supplied with a flow rate of 2 Umin by a  precisely controlled humidity-supplying apparatus SRG-1 R› AS, manufactured by Daiichikagaku Inc. After PEB for 60  seconds, puddle development was carried out with a devel› oper of n-butyl acetate for 30 seconds to form a 40-nm line  and space pattern. Sensitivity at this time and line width  roughness (LWR) after development were measured with a  length measuring SEM (CG-4000, manufactured by Hitachi  High-Technologies Corp.). The result is given in Table 2.  A minimum dimension at an exposure dose which allows  a 120-nm line and space pattern of 1:1 resolution was  defined as resolution, and line width roughness (LWR) of the  120-nm LS pattern was measured by SEM.  Table 3 shows the resist compositions, results of sensi› tivity in EB exposure, resolution, and LWR thereof.  TABLE 3  TABLE 2  Resist  PEB temperature  Sensitivity  LWR  composition  (" C.)  (mJ/cm 2 )  (nm)  Example 1  90  28  3.2  Example 2  90  32  3.5  Comparative  85  37  4.3  Example 1  Resist  PEB temperature  Sensitivity  Resolution  LWR  composition  (" C.)  (µC/cm 2 )  (nm)  (nm)  Example 3  85  30  80  5.8  Example 4  85  31  80  5.8  Example 5  85  38  75  4.3  Example 6  75  37  75  4.2  Comparative  85  37  85  6.3  Example 2  77  Electron Beam Lithography Evaluation  For lithography evaluation, the resist composition pre› pared with the composition shown in Table 1 (Examples 3  to 6 and Comparative Example 2) was applied on a 6-inch  diameter Si substrate subjected to HMDS (hexamethyldisi› lazane) vapor prime, by spin coating with clean track Mark  The results of Tables 2 and 3 demonstrate that Examples  to 6, which contain the polymer compound having the  repeating unit substituted with the acid-labile groups shown  by the general formulae (1-1) to (1-5), had appropriate  resolution, sensitivity and LWR.  In addition, when the polymer-type acid generator was  copolymerized (Examples 4 to 6), LWR property was more  improved than Example 3, which contains no polymer-type  acid generator. This indicates that the polymer compound  used in the inventive resist composition exhibited very  excellent resolution and small LWR by synergism due to  copolymerization with the acid generator. 