103  US 9,989,847 B2  104  run thick. Each of the resist solutions shown in Table 4 was  spin coated on the silicon substrate and baked on a hot plate  at 100°  C. for 60 seconds, forming a resist film of 90 run  thick on the ARC. The wafer was exposed on an ArF  excimer laser immersion lithography scanner (NSR-R610C  by Nikon Corp., NA 1.30, dipole illumination, Cr mask),  baked (PEB) at 80°  C. for 60 seconds, and developed, in a  2.38 wt% tetramethylammonium hydroxide (TMAH) aque- ous solution for 60 seconds, forming a pattern.  Resist evaluation was made on a 40-run 1:1 line-and- space pattern. On observation under an electron microscope,  the optimum exposure dose (Eop) was defined as an expo- sure dose (mJ/cm 2 )  which provided a line width of 40 run.  The width of lines of a 40-run 1: 1 line-and-space pattern  was measured under SEM to determine a line width varia- tion (30 points measured,  3a  value computed), which was  reported as line width roughness (LWR). A smaller value of  JoTo1;’  F3CI  ~of’  ~o~  -fH)  -continued  a:(b+b’):(c+c’)=l:4-7:0.01-1 (molar ratio)  Mw=l,500  TABLE 4  Diffusion  Resin PAG  control agent Surfactant Solvent 1  Solvent 2  Resist  (pbw) (pbw)  (pbw)  (pbw)  Example  1-1  R-1  P-1  PAG-X  Q-1  SF-1  (80)  (7.6)  (2.5)  (3.0)  1-2  R-2  P-2  PAG-X  Q-1  SF-1  (80)  (7.6)  (2.5)  (3.0)  1-3  R-3  P-3  PAG-X  Q-1  SF-1  (80)  (7.6)  (2.5)  (3.0)  1-4  R-4  P-4  PAG-X  Q-1  SF-1  (80)  (7.6)  (2.5)  (3.0)  1-5  R-5  P-5  PAG-X  Q-1  SF-1  (80)  (7.6)  (2.5)  (3.0)  1-6  R-6  P-6  PAG-X  Q-1  SF-1  (80)  (7.6)  (2.5)  (3.0)  1-7  R-7  P-7  PAG-X  Q-1  SF-1  (80)  (7.6)  (2.5)  (3.0)  1-8  R-8  P-8  PAG-X  Q-1  SF-1  (80)  (7.6)  (2.5)  (3.0)  1-9  R-9  P-9  PAG-X  Q-1  SF-1  (80)  (7.6)  (2.5)  (3.0)  1-10  R-10  P-10  PAG-X  Q-1  SF-1  (80)  (7.6)  (2.5)  (3.0)  1-11  R-11  P-11  PAG-X  Q-1  SF-1  (80)  (7.6)  (2.5)  (3.0)  1-12  R-12  P-12  PAG-X  Q-1  SF-1  (80)  (7.6)  (2.5)  (3.0)  1-13  R-13  P-1  PAG-Y  Q-1  SF-1  (80)  (13.3)  (2.5)  (3.0)  1-14  R-14  P-2  PAG-Y  Q-1  SF-1  (80)  (13.3)  (2.5)  (3.0)  Comparative Example  1-1  R-15  P-1  PAG-X  Q-2  SF-1  (80)  (7.6)  (3.8)  (3.0)  1-2  R-16  P-1  PAG-X  Q-3  SF-1  (80)  (7.6)  (3.4)  (3.0)  1-3  R-17  P-1  PAG-X  Q-4  SF-1  (80)  (7.6)  (3.0)  (3.0)  1-4  R-18  P-1  PAG-X  Q-5  SF-1  (80)  (7.6)  (4.1)  (3.0)  1-5  R-19  P-1  PAG-X  Q-6  SF-1  (80)  (7.6)  (5.1)  (3.0)  1-6  R-20  P-1  PAG-X  Q-7  SF-1  (80)  (7.6)  (5.1)  (3.0)  1-7  R-21  P-1  PAG-Y  Q-2  SF-1  (80)  (13.3)  (1.7)  (3.0)  (pbw)  (pbw)  PGMEA  GBL  (1,728)  (192)  PGMEA  GBL  (1,728)  (192)  PGMEA  GBL  (1,728)  (192)  PGMEA  GBL  (1,728)  (192)  PGMEA  GBL  (1,728)  (192)  PGMEA  GBL  (1,728)  (192)  PGMEA  GBL  (1,728)  (192)  PGMEA  GBL  (1,728)  (192)  PGMEA  GBL  (1,728)  (192)  PGMEA  GBL  (1,728)  (192)  PGMEA  GBL  (1,728)  (192)  PGMEA  GBL  (1,728)  (192)  PGMEA  GBL  (1,728)  (192)  PGMEA  GBL  (1,728)  (192)  PGMEA  GBL  (1,728)  (192)  PGMEA  GBL  (1,728)  (192)  PGMEA  GBL  (1,728)  (192)  PGMEA  GBL  (1,728)  (192)  PGMEA  GBL  (1,728)  (192)  PGMEA  GBL  (1,728)  (192)  PGMEA  GBL  (1,728)  (192)  LWR indicates a line pattern with a less fluctuation and of  better profile. In this test, the sample is rated good when  LWR is equal to or less than 3.0 run and poor when LWR is  equal to or more than 3 .1 run.  An LIS pattern was formed by exposure in the optimum  dose (determined in the sensitivity evaluation) through the  mask with the pitch fixed and the line width varied. MEF  On a silicon substrate, an antireflective coating solution 65  (ARC-29A, Nissan Chemical Industries, Ltd.) was coated  and baked at 200°  C. for 60 seconds to form an ARC of 100  Examples 2-1 to 2-14 and Comparative Examples  2-1 to 2-7  Resist Test 1 (ArF Lithography) 