US 9,086,623 B2  88  87  -continued  [Surfactant]  W-1: Megafac F176 (produced by Dainippon Ink &  Chemicals, Inc.; fluorinated),  W-2: Megafac ROS (produced by Dainippon Ink & Chemi› cals, Inc.; fluorinated and siliconized),  W-3: polysiloxane polymer KP-341 (produced by Shin› Etsu Chemical Co., Ltd.; siliconized), and  W-4: compound of the formula below:  30 seconds. Thus, a line-and-space pattern was obtained. The  minimum pitch in which an image was formed was denoted as  a resolution.  When a rinse treatment was to be performed, the wafer  after the development was rinsed with a rinse liquid indicated  in the following table and rotated at a rotating speed of 4000  rpm for 30 seconds. Thus, a line-and-space pattern was  obtained. The minimum pitch in which an image was formed  was denoted as a resolution.  [Residue Defect]  [Solvent]  Al: propylene glycol monomethyl ether acetate,  A2: y-butyrolactone,  A3: cyclohexanone,  Bl: propylene glycol monomethyl ether, and  B2: ethyl lactate.  <Evaluation>  With respect to each of the above obtained resist compo› sitions, the resolution, residue defect and etching resistance  were evaluated in accordance with the following evaluation  methods. Results are given in Table 3.  [Resolution]  An organic antireflection film DUY 44 (produced by  Brewer Science Inc.) was applied onto a silicon wafer,  thereby forming a 60 nm-thick antireflection film. Each of the  above prepared resist compositions was applied thereonto  and baked (prebaked, PB) for 60 seconds, thereby forming a  200 nm-thick resist film. The thus obtained wafer was pat› ternwise exposed to light by means of a KrF excimer laser  scanner (NAO.SO). Thereafter, the exposed wafer was baked  (post-exposure baked, PEB) for 60 seconds, and developed  using a developer indicated in the following table for 30  seconds.  When no rinse treatment was performed, the wafer after the  development was rotated at a rotating speed of 4000 rpm for  A: 0.70 to less than 0.85 nm/sec,  B: 0.85 to less than 0.95 nm/sec,  C: 0.95 to less than 1.05 nm/sec, and  D: 1.05 nm/sec or greater.  Each of the above prepared resist compos1t10ns was  applied onto a silicon wafer and baked (prebaked, PB) for 60  seconds, thereby forming a 100 nm-thick resist film. The  whole surface of the obtained resist film was exposed to light  by means of a KrF excimer laser scanner (NAO.SO). Thereaf› ter, the exposed resist film was developed with a negative  developer for 30 seconds, and rinsed with a rinse liquid. The  thus obtained wafer was rotated at a rotating speed of 4000  rpm for 30 seconds, thereby obtaining an exposed film. The  resultant exposed film was etched for 30 seconds by means of  an etching apparatus (model M-6000 manufactured by Hita› chi  High-Technologies  Corporation).  Any  difference  between the film thickness before the etching and that after  the etching was measured, thereby determining the etching  rate per second. Obtained results were evaluated as follows.  A: 0 to 50 defects,  B: 51 to 100 defects,  C: 101 to 150 defects, and  D: 151 or more defects.  [Etching Resistance]  An organic antireflection film DUY 44 (produced by  Brewer Science Inc.) was applied onto a silicon wafer,  thereby forming a 60 nm-thick antireflection film. Each of the  above prepared resist compositions was applied thereonto  and baked (prebaked, PB) for 60 seconds, thereby forming a  200 nm-thick resist film. The thus obtained wafer was pat› ternwise exposed to light by means of a KrF excimer laser  scanner (NAO.SO). Thereafter, the exposed wafer was baked  (post-exposure baked, PEB) for 60 seconds, developed with a  developer for 30 seconds, and rinsed with a rinse liquid. The  rinsed wafer was rotated at a rotating speed of 4000 rpm for 30  seconds. Thus, a line-and-space pattern of 180 nm half pitch  was obtained. Any residue defects on the thus obtained pat› tern were numerically rated, thereby identifying the number  of residue defects per 8-inch silicon wafer, and evaluated as  follows.  [o/’----.._/OH  /0~  N ~ 0 /’----.._/0H  Amine-6  TABLE3  Ex.  Resist  PB  Rinse  PEB  Developer liquid Resolution  Residue  Etching  defect  resistance  Ex. 1 (KrF-01)  Res-01  100°  C./60 s  120°  C./60 s  S-1  120nm  B  C  Ex. 2 (KrF-02)  Res-02  110°  C./60 s  120°  C./60 s  S-2  S-6  115nm  A  C  Ex. 3 (KrF-03)  Res-03  110°  C./60 s  110°  C./60 s  S-2  S-5  110nm  A  A  Ex. 4 (KrF-04)  Res-04  100°  C./60 s  100°  C./60 s  S-1  S-5  110nm  B  A  Ex. 5 (KrF-05)  Res-05  90°  C./60 s  110°  C./60 s  S-1  S-7  120nm  A  B  Ex. 6 (KrF-06)  Res-06  100°  C./60 s  120°  C./60 s  S-1  S-8  115nm  B  B  Ex. 7 (KrF-07)  Res-07  100°  C./60 s  120°  C./60 s  S-1  S-3  125 nm  A  C  Ex. 8 (KrF-08)  Res-08  110°  C./60 s  100°  C./60 s  S-2  S-4  110nm  A  B  Ex. 9 (KrF-09)  Res-10  100°  C./60 s  120°  C./60 s  S-1  S-4  130nm  C  B  Comp. Ex. 1 (KrF-10)  Res-09  100°  C./60 s  110°  C./60 s  S-1  S-5  140nm  D  B  Comp. Ex. 2 (KrF-11)  Res-11  100°  C./60 s  100°  C./60 s  S-1  S-5  150nm  C  D 