US 10,781,276 B2  1  2  POLYMER, RESIST COMPOSITION  CONTAINING POLYMER, AND METHOD  FOR MANUFACTURING DEVICE USING  SAME  TECHNICAL FIELD  BACKGROUND ART  Solution to Problem  Advantageous Effects of Invention  CITATION LIST  DESCRIPTION OF EMBODIMENTS  Patent Literature  SUMMARY OF INVENTION  Technical Problem  Patent Literature 1: JPH9-90637  Some aspects of the present invention relate to a polymer  used for a resist composition. Some embodiments of the  present invention relate to a resist composition comprising  the polymer and a method of manufacturing a device using  the resist composition.  In recent years, by making full use of a photolithography  technique using a photoresist, manufacturing of a display  device such as a liquid crystal display (LCD) and an organic  EL display (OLED), and a formation of semiconductor  elements are active. As an active energy ray, i-line having a  wavelength of365 nm, and light such ash-line ( 405 nm) and  g-line (436 nm) having a longer wavelength than i-line are  widely used for the packaging of the electronic component  and the electronic product.  Since a device integration has developed, the demand for  miniaturization  of lithography  technology  has  been  increased, a light having a very short wavelength such as  KrF excimer laser (wavelength 248 nm), ArF excimer laser  (wavelength 193 nm), extreme ultraviolet (EUV, wavelength  13.5 nm) and an electron beam (EB) tends to be used for  exposure. Since these lithography techniques using short  wavelength light, especially EUV or electron beam, can  allow manufacturing by single patterning, a demand for a  resist composition having high sensitivity to EUV, the  electron beam or the like may further increase in the future.  Due to shortening the wavelength of the exposure light  source, it is required for the resist composition to improve  the sensitivity to the exposure light source and the resolution  property of lithography which can reproduce a pattern of  fine dimensions. A chemically amplified resist is known as  a resist composition satisfying such requirements (Patent  Literature 1 ).  However, with conventional chemically amplified resists,  it is difficult to sufficiently suppress reduction in resist  pattern collapse and line edge roughness (LER) of a line  pattern as resolution width of resist becomes finer. In order  to suppress the resist pattern collapse, it has been proposed  to increase a crosslinking density in a negative chemically  amplified resist. However, swelling occurs during develop› ment and defects such as bridges may occur. Although it is  strongly required to prevent the resist pattern collapse and  the bridge formation, since conventional chemically ampli- fled resist compositions for EUV, electron beam or the like  have low EUV or electron beam absorption, it is difficult to  simultaneously satisfy the required characteristics in sensi› tivity, resolution and pattern performance.  absorption efficiency for a particle beam or an electromag› netic wave, especially electron beam or EUV, and excellence  in sensitivity, resolution and pattern performance character› istics.  An  object of some aspects of the present invention is to  provide a resist composition comprising the polymer and a  method of manufacturing a device using the resist compo› sition.  As a result of intensive investigation to solve the above  problems, the inventors of the present invention found that  when a polymer comprising a unit A having an onium salt  structure and a unit B having a specific multiple bond is used  as a polymer of a resist composition, an intramolecular  crosslinking reaction occurs between the unit A and the unit  B by irradiation with a particle beam, an electromagnetic  wave or the like, so that high sensitivity can be achieved and  pattern collapse can be suppressed. Then, the inventors  completed some aspects of the present invention.  One aspect of the present invention to solve the above  problems is a polymer, comprising: a unit A; and a unit B,  wherein the unit A has an onium salt structure and generates  a first radical by irradiation with a particle beam or an  electromagnetic wave, the unit B has a radical generating  structure containing at least one multiple bond selected from  the group consisting of: a multiple bond between a carbon  atom and a carbon atom; a multiple bond between a carbon  atom and a heteroatom, and generates a second radical by  irradiation with a particle beam or an electromagnetic wave,  and the multiple bond in the radical generating structure is  not a multiple bond contained in a benzenoid aromatic.  An  embodiment of the present invention is a resist com- position comprising the polymer.  Moreover, an embodiment of the present invention is a  method of manufacturing a device, comprising: a resist film  forming step of forming the resist film on a substrate using  the resist composition; a photolithography step of exposing  the resist film to the particle beam or the electromagnetic  wave; and a pattern forming step of developing the exposed  resist film to obtain a photoresist pattern.  A polymer of some aspects of the present invention has  high absorption efficiency for the particle beam, the elec› tromagnetic wave or the like, and is excellent in sensitivity,  resolution and pattern performance characteristics when the  polymer is used for the resist composition.  In the present invention, "a particle beam or an electro› magnetic wave" includes an electron beam, an extreme  ultraviolet radiation and the like.  In the present invention, "by irradiation with a particle  beam or an electromagnetic wave" means exposing at least  one part of the polymer to the particle beam or the electro› magnetic wave. Exposing one part of the polymer to the  particle beam or the electromagnetic wave excites or ionizes  a certain part of the polymer, and an active species is  generated. A secondary reaction such as decomposing one  part of the unit by the active species, adding the active  species to the unit and eliminating a hydrogen atom from the  An  object of some aspects of the present invention is to  provide a polymer used for a resist composition having high 