1111111111111111 IIIIII IIIII 1111111111 11111 1111111111 lllll lllll lllll 111111111111111 11111111  US 20200285149Al  c19)  United States  c12)  Patent Application Publication  Hatakeyama et al.  c10)  Pub. No.: US 2020/0285149 Al  (43)  Pub. Date:  Sep. 10, 2020  (54)  RESIST COMPOSITION AND PATTERNING  PROCESS  (71)  Applicant:  Shin-Etsu Chemical Co., Ltd.,  Tokyo  (JP)  (72)  Inventors:  Jun Hatakeyama,  Joetsu-shi (JP);  Masaki Ohashi,  Joetsu-shi (JP);  Takayuki Fujiwara,  Joetsu-shi (JP)  (73)  Assignee:  Shin-Etsu Chemical Co., Ltd.,  Tokyo  (JP)  (21)  Appl. No.:  16/795,760  (22)  Filed:  Feb. 20, 2020  (51)  Int. Cl.  (52)  U.S. Cl.  CPC ..........  G03F  710045  (2013.01);  G03F  710392  (2013.01);  G03F  710382  (2013.01);  G03F  710384  (2013.01);  G03F  710048  (2013.01);  G03F  71426  (2013.01);  G03F  712004  (2013.01)  (30)  Foreign Application Priority Data  (57)  ABSTRACT  Publication Classification  A resist composition is provided comprising a base polymer  and  a  2,5,8,9-tetraaza-l-phosphabicyclo[3.3.3]undecane,  biguanide or phosphazene salt of an iodized aromatic group› containing N-carbonysulfonamide. The salt is effective for  sensitizing and suppressing acid diffusion and prevents any  film thickness loss after development. The resist composi› tion is improved in resolution, LWR and CDU when a  pattern is formed therefrom by lithography.  Mar. 6, 2019  (JP) ................................. 2019-040730  G03F  71004  G03F  71039  G03F  71038  G03F  7120  G03F  7142  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01) 