102  US 8,962,233 B2  101  have, for example, a wavelength of 250 nm or shorter, espe› cially 220 nm or shorter. As such actinic rays or radiation,  there can be mentioned, for example, a KrF excimer laser  (248 nm), anArF excimer laser (193 nm), an F $_{2 }$ excimer laser  (157 nm), X-rays or an electron beam. As especially preferred  actinic rays or radiation, there can be mentioned an ArF  excimerlaser, anF$_{2 }$ excimerlaser(157 nm), EUV (13 nm) or  an electron beam.  solvents, there can be mentioned, for example, those  described in section [0244] et seq. of US 2008/0248425 Al  and the like.  Among the above solvents, an alkylene glycol monoalkyl  ether carboxylate, an alkylene glycol monoalkyl ether and  ethyl lactate are especially preferred.  These solvents may be used alone or in combination. When  a plurality of solvents are mixed together, it is preferred to mix  a hydroxy lated solvent with a non-hydroxy lated solvent. The  mass ratio ofhydroxylated solvent to non-hydroxylated sol› vent is in the range of 1/99 to 99/1, preferably 10/90 to 90/10  and more preferably 20/80 to 60/40.  The exposure performed in the condition that the interstice  between the photosensitive film and a lens is filled with a  liquid (for example, pure water) whose refractive index is  higher than that of air, namely, liquid-immersion exposure  may be carried out in the stage of the exposure to actinic rays  or radiation. This liquid-immersion exposure can enhance the  resolution. At the liquid-immersion exposure, for the preven› tion of any contact of the resist film with the immersion liquid,  a film that is highly insoluble in the immersion liquid (also  referred to as a "top coat") may be disposed on the film and  between the film and the immersion liquid. As another means  for the prevention of any contact of the film with the immer› sion liquid, a hydrophobic resin (HR) may be added to the  composition in advance.  The hydrophobic resin (HR) will be described below.  In the case of exposure of the film of the composition of the  present invention via the liquid immersion medium, a hydro› phobic resin (HR) may be further added according to neces› sity. This would bring about uneven localization of the hydro› phobic resin (HR) on the surface layer of the film. When the  liquid immersion medium is water, there would be attained an  improvement of receding contact angle on the surface of the  film with reference to water upon formation of the film. The  receding contact angle of the surface of the film can be  increased by the addition of the hydrophobic resin (HR). The  receding contact angle of the film is preferably in the range of  60°  to 90°,  more preferably 70°  or higher. Although the  hydrophobic resin (HR) is unevenly localized on the interface  as aforementioned, differing from the surfactant, the hydro› phobic resin does not necessarily have to have a hydrophilic  group in its molecule and does not need to contribute toward  uniform mixing of polar/nonpolar substances.  The receding contact angle refers to a contact angle deter› mined when the contact line at a droplet-substrate interface  draws back.  It  is generally known that the receding contact  angle is useful in the simulation of droplet mobility in a  dynamic condition. In a simple definition, the receding con› tact angle can be defined as the contact angle exhibited at the  recession of the droplet interface at the time of, after appli› cation of a droplet discharged from a needle tip onto a sub› strate, re-indrawing the droplet into the needle. Generally, the  receding contact angle can be measured according to a  method of contact angle measurement known as the dilation/  contraction method.  In the operation ofliquid immersion exposure, it is needed  for the liquid for liquid immersion to move on a wafer while  tracking the movement of an exposure head involving high› speed scanning on the wafer and thus forming an exposure  pattern. Therefore, the contact angle of the liquid for liquid  immersion with respect to the resist film in dynamic condition  is important, and it is required for the resist to be capable of  tracking the high-speed scanning of the exposure head with› out leaving any droplets.  As the hydrophobic resin (HR) is localized in a surface  portion of the film, it is preferred for the same to contain a  fluorine atom or a silicon atom. The fluorine atom or silicon  atom may be contained in the principal chain of the hydro› phobic resin (HR) or may be introduced in a side chain(s)  thereof as a substituent.  As the actinic rays or radiation, there can be mentioned, for  example, infrared light, visible light, ultraviolet light, far› ultraviolet light, extreme ultraviolet light, X-rays or an elec› tron beam.  It  is preferred for the actinic rays or radiation to  The resultant photosensitive film is exposed to actinic rays  or radiation, preferably baked (heated), and developed. Thus,  a favorable pattern can be obtained. From the viewpoint of  sensitivity and stability, it is preferred for the baking tempera› ture to be in the range of 80 to 150°  C., especially 90 to 130°  C.  For example, the composition is applied onto, for example,  any of substrates ( e.g., silicon/silicon dioxide coating, silicon  nitride and chromium-vapor-deposited quartz substrate, etc.)  for use in the production of precision integrated circuit  devices, etc. by appropriate application means, such as a  spinner or a coater. The thus applied composition is dried,  thereby obtaining an actinic-ray- or radiation-sensitive film  (hereinafter also referred to as a photosensitive film). The  application of the composition to the substrate can be pre- ceded by the application of a heretofore known antireflection  film.  The positive or negative actinic-ray- or radiation-sensitive  resin composition of the present invention is typically used in  the following manner. Namely, the composition of the present  invention is typically applied onto a support, such as a sub› strate, thereby forming a film. The thickness of the film is  preferably in the range of 0.02 to 0.1  µm. The method of  application onto a substrate is preferably a spin coating. The  spin coating is performed at a rotating speed of preferably  1000 to 3000 rpm.  [7] Method of Forming Pattern  The positive or negative actinic-ray- or radiation-sensitive  resin composition of the present invention may further  according to necessity contain a dye, a plasticizer, a photo› sensitizer, a light absorber, a compound capable of accelerat› ing the dissolution in a developer (for example, a phenolic  compound of 1000 or less molecular weight, or a carboxy› lated alicyclic or aliphatic compound), etc. Still further,  appropriate use can be made of compounds having a func› tional group as a proton acceptor described in, for example,  JP-A’s 2006-208781 and 2007-286574.  (Other Additive)  The amount of solvent used is not particularly limited.  However, the amount is generally so regulated that the total  solid concentration of the composition falls in the range of  preferably 0.5 to 30 mass%, more preferably 1.0 to 10 mass  %. In particular when an electron beam or EUV lithography is  carried out using the composition of the present invention, the  amount is so regulated that the concentration falls in the range  of preferably 2.0 to 6.0 mass %, more preferably 2.0 to 4.5  mass%.  The hydroxylated solvent is preferably an alkylene glycol  monoalkyl ether and an alkyl lactate. The non-hydroxylated  solvent is preferably an alkylene glycol monoalkyl ether car› boxylate. 