US 10,005,868 B2  84  83  wherein  R 21 ,  R 25 , and  R $^{29 }$represent a hydrogen atom or a  methyl group; R 22  represents a single bond, a phenylene  group,  ---O-R 33 -, or  -C(=0)-Y-R 33 -, where  Y  represents an oxygen atom or  NH  and R 33  represents a  linear, branched, or cyclic alkylene group having 1 to 6  carbon atoms, an alkenylene group, or a phenylene group in  which these groups may contain a carbonyl group, an ester  group, an ether group, or a hydroxyl group;  R 23 ,  R 24 ,  R 26 ,  R 27 ,  R 28 ,  R 30 ,  R 31 , and  R $^{32 }$may be the same or different and  represent a linear, branched, or cyclic alkyl group having 1  to 12 carbon atoms and optionally containing a carbonyl  group, an ester group, or an ether group, an aryl group  having 6 to 12 carbon atoms, an aralkyl group having 7 to  20 carbon atoms, or a thiophenyl group; Z 3  represents a  single bond, a methylene group, an ethylene group, a phe› nylene group, a fluorinated phenylene group,  ---O-R 34 -,  -C(=0)---0-R 34 -, or  -C(=0)-NH-R 34 -, where  R$^{34 }$represents a linear, branched, or cyclic alkylene group  having 1 to 6 carbon atoms, an alkenylene group, or a  phenylene group, in which these groups may contain a  carbonyl group, an ester group, an ether group, or a hydroxyl  group;  M- represents a non-nucleophilic counter ion; and  dl, d2, and d3 satisfy 0sdls0.3, 0sd2s0.3, 0sd3s0.3, and  0<dl +d2+d3s0.3.  13.  The patterning process according to claim  9,  further  comprising post exposure baking under a condition that a  moisture content is 10 g or more per kilogram of  dry  air,  before the development.  12.  The patterning process according to claim  9,  wherein  the high energy beam is an i-beam with a wavelength of364  nm, a KrF excimer laser beam with a wavelength of 248 nm,  an ArF excimer laser beam with a wavelength of 193 nm, an  EUV lithography with a wavelength of 13.5 nm, or an  electron beam.  9.  A patterning process comprising the steps of applying  the resist composition according to claim  1  on a substrate;  performing exposure with a high energy beam after heat  treatment; and performing development with a developer.  10.  The patterning process according to claim  9,  wherein  the developer used in the patterning process is one or more  of 2-octanone, 2-nonanone, 2-heptanone, 3-heptanone,  4-heptanone, 2-hexanone, 3-hexanone, diisobutylketone,  methylcyclohexanone, acetophenone, methylacetophenone,  propyl acetate, butyl acetate, isobutyl acetate, amyl acetate,  butenyl acetate, isoamyl acetate, propyl formate, butyl for› mate, isobutyl formate, amyl formate, isoamyl formate,  methyl valerate, methyl pentenoate, methyl crotonate, ethyl  crotonate,  methyl propionate,  ethyl propionate,  ethyl  3-ethoxypropionate, methyl lactate, ethyl lactate, propyl  lactate, butyl lactate, isobutyl lactate, amyl lactate, isoamyl  lactate, methyl 2-hydroxyisobutyrate, ethyl 2-hydroxyisobu› tyrate, methyl benzoate, ethyl benzoate, phenyl acetate,  benzyl acetate, methyl phenylacetate, benzyl formate, phe› nylethyl formate, methyl 3-phenylpropionate, benzyl propi- onate, ethyl phenylacetate, and 2-phenylethyl acetate, and a  negative pattern is formed by the development.  11.  The patterning process according to claim  9,  wherein  the developer used in the patterning process is an alkali  aqueous solution, and a positive pattern is formed by the  development.  * * * * *  8.  The resist composition according to claim  1,  further  comprising either or both of a basic compound and a  surfactant as an additive(s). 