Feb. 18,2021  95  US 2021/0048748 Al  Comparative Quenchers 1 to 7 of the Following Structural  Formulae  [0176]  Comparative Quencher 2  Comparative Quencher 3  Blend Quenchers 1 to 3 of the Following Structural  Formulae  Comparative Quencher 1  [0177]  Blend Quencher 1  Blend Quencher 2  Blend Quencher 3  Comparative Quencher 4  Comparative Quencher 5  Comparative Quencher 6  [0178]  Each of the resist compositions in Tables 1 to 4 was  spin coated on a silicon substrate having a 20-nm coating of  silicon-containing spin-on hard mask SHB-A940 (Shin-Etsu  Chemical Co., Ltd., silicon content 43 wt%) and prebaked  on a hotplate at 105°  C. for 60 seconds to form a resist film  of 60 nm thick. Using an EUV scanner NXE3300 (ASML,  NA 0.33,  a  0.9/0.6, quadrupole illumination), the resist film  was exposed to EUV through a mask bearing a hole pattern  at a pitch 46 nm (on-wafer size) and +20% bias. The resist  film was baked (PEB) on a hotplate at the temperature  shown in Tables 1 to 4 for 60 seconds and developed in a  2.38 wt % TMAH aqueous solution for 30 seconds to form  (2) EUV Lithography Test  Comparative Quencher 7  -continued  I\  0  N~  \__J  \_o  OH  _  Q - 0  0-6s Q-{  I  ~  OH  #  I  I  Y-<  I 