US 2020/0401045 Al  1  Dec. 24, 2020  ACTIVE-RAY-SENSITIVE OR  RADIATION-SENSITIVE RESIN  COMPOSITION, RESIST FILM, PATTERN  FORMATION METHOD, AND METHOD FOR  MANUFACTURING ELECTRONIC DEVICE  CROSS-REFERENCE TO RELATED  APPLICATIONS  BACKGROUND OF THE INVENTION  1.  Field of the Invention  2. Description of the Related Art  SUMMARY OF THE INVENTION  DESCRIPTION OF THE PREFERRED  EMBODIMENTS  [0026]  Hereinafter, the present invention will be described  in detail.  [0008]  The present inventors have conducted intensive  studies to accomplish the objects, and as a result, they have  thus found that the problems can be solved with an actinic  [0006]  Therefore, an object of the present invention is to  provide an actinic ray-sensitive or radiation-sensitive resin  composition which is capable of forming a pattern having an  excellent pattern line width roughness (LWR).  [0005]  The present inventors have conducted studies on  the resist composition described in JP2012-242800A, and  have thus revealed that an acid diffusion control agent easily  forms an aggregate and tends to be unevenly present in a  system. Further, as a result, they have revealed that since the  concentration distribution of the acid diffusion control agent  is uneven in the resist film, the suppression (neutralization)  of diffusion of an acid generated from a photoacid generator  does not proceed evenly, and the line width roughness  (LWR) of a pattern thus formed is not necessarily sufficient.  [0024]  According to the present invention, it is possible to  provide an actinic ray-sensitive or radiation-sensitive resin  composition which is capable of forming a pattern having an  excellent pattern line width roughness (LWR).  [0023]  [7] A method for manufacturing an electronic  device, comprising the pattern forming method as described  in [6].  [0019]  [ 6] A pattern forming method comprising:  [0018]  [5] A resist film formed using the actinic ray› sensitive  or radiation-sensitive  resin  composition  as  described in any one of [1] to [4].  [0016]  [ 4] The actinic ray-sensitive or radiation-sensitive  resin composition as described in [3],  [0015]  [3] The actinic ray-sensitive or radiation-sensitive  resin composition as described in [1] or [2], further com› prising a photoacid generator that generates an acid upon  irradiation with actinic rays or radiation.  [0004]  For example, a resist composition including a  photoacid generator and a compound (acid diffusion control  agent) which is basic relative to the photoacid generator is  disclosed in the section of Examples of JP2012-242800A.  The acid diffusion control agent acts as a quencher which  traps an acid generated from the photoacid generator upon  exposure. The diffusion of the acid generated from the  photoacid generator into the unexposed portion is controlled  by the action of the quencher controls.  [0003]  In processes for manufacturing semiconductor  devices such as an integrated circuit (IC) and a large scale  integrated circuit (LSI) in the related art, microfabrication by  lithography using a chemically amplified resist composition  has been performed.  [0002]  The present invention relates to an act1mc ray› sensitive or radiation-sensitive resin composition, a resist  film, a pattern forming method, and a method for manufac› turing an electronic device.  [0013]  [2] The actinic ray-sensitive or radiation-sensitive  resin composition as described in [1],  [0010]  [1] An actinic ray-sensitive or radiation-sensitive  resin composition comprising a resin including a repeating  unit derived from a monomer having a salt structure and a  repeating unit having a group whose polarity increases  through decomposition by the action of an acid,  [0001]  This application is a Continuation of PCT Interna› tional Application No. PCT/JP2019/006235 filed on Feb. 20,  2019, which claims priority under 35 U.S.C. § 119(a) to  Japanese Patent Application No. 2018-035948 filed on Feb.  28, 2018. The above application is hereby expressly incor› porated by reference, in its entirety, into the present appli› cation.  ray-sens1t1ve  or  radiation-sensitive  resin  compos1t10n  including a resin having a specific structure, thereby com› pleting the present invention.  [0009]  That is, the present inventors have found that the  problems can be solved by the following configura› tions.  [0011]  in which the salt structure consists of an anionic  structure moiety and an actinic ray-sensitive decom› posable or radiation-sensitive decomposable cationic  structure moiety, and  [0012]  a pKa of a monomer obtained by substituting the  cationic structure moiety in the salt structure with a  hydrogen atom is -0.80 or more.  [0014]  in which the monomer having the salt structure  is a monomer represented by General Formula (Xl)  which will be described later.  [0017]  in which a pKa of an acid generated from the  photoacid generator is smaller than a pKa of a mono› mer obtained by substituting the cationic structure  moiety in the salt structure with a hydrogen atom.  [0020]  a resist film forming step of forming a resist film  using the actinic ray-sensitive or radiation-sensitive  resin composition as described in any one of [1] to [ 4];  [0021]  an exposing step of exposing the resist film; and  [0022]  a developing step of developing the exposed  resist film using a developer.  [0025]  In addition, according to the present invention, it  is possible to provide a resist film, a pattern forming  method, and a method for manufacturing an electronic  device, each of which uses the actinic ray-sensitive or  radiation-sensitive resin composition.  [0027]  Description  of  configuration  requirements  described below may be made on the basis of repre- [0007]  In addition, another object of the present inven› tion is to provide a resist film, a pattern forming  method, and a method for manufacturing an electronic  device, each of which uses the actinic ray-sensitive or  radiation-sensitive resin composition. 