47 H. Lee. Patterning of ge2sb2te5 phase change mate- rial using uv nano–imprint lithography. Microelectronic Engineering , 84(1):21–24, 2007. ings of the 45th Annual International Reliability Physics Symposium , pages 542–546, 2007. [185] N. K. Min, A. Efremov, Y. H. Kim, M. Kim, H. H. Park, H. W. Lee, and K. H. Kwon. Etching characteristics and mechanism of ge2sb2te5 thin films in inductively coupled cl–2/ar plasma. J. Vac. Sci. Tech. A , 26(2):205– 211, 2008. [186] S. M. Yoon, K. J. Choi, Y. S. Park, S. Y. Lee, N. Y. Lee, and B. G. Yu. Dry etching of Ge$_{2}$Sb$_{2}$Te$_{5}$ thin films into nanosized patterns using TiN hard mask. Jap. J. Appl. Phys. 2 , 45(37-41):L1080–L1083, 2006. [187] G. M. Feng, B. Liu, Z. T. Song, S. L. Feng, and B. M. Chen. Reactive–ion etching of ge2sb2te5 in cf4/ar plasma for non–volatile phase–change memories. Micro- electronic Engineering , 85(8):1699–1704, 2008. [188] J. W. Lee, H. N. Cho, S. R. Min, and C. W. Chung. Inductively coupled plasma reactive ion etching of ges- bte thin films in a hbr/ar gas. Integrated Ferroelectrics , 90:95–106, 2007. [189] G. M. Feng, B. Liu, Z. T. Song, S. L. Feng, and B. Chen. Reactive ion etching of ge2sb2te5 in chf3/o–2 plasma for nonvolatile phase–change memory device. Electrochem- ical and Solid State Letters , 10(5):D47–D50, 2007. [190] C. Xu, B. Liu, Z. T. Song, S. L. Feng, and B. M. Chen. Reactive–ion etching of sn–doped ge2sb2te5 in chf3/o– 2 plasma for non–volatile phase–change memory device. Thin Solid Films , 516(21):7871–7874, 2008. [191] C. Andricacos, C. Uzoh, J. O. Dukovic, J. Horkans, and H. Deligiann. Damascene copper electroplating for chip interconnections. IBM Journal of Research and Devel- opment , 42(5):567–574, 1998. [192] Q. B. Liu, Z. T. Song, K. L. Zhang, L. Y. Wang, S. L. Feng, and B. M. Chen. Damascene array struc- ture of phase change memory fabricated with chemical mechanical polishing method. Chinese Physics Letters , 23(8):2296–2298, 2006. [193] M. Zhong, Z. T. Song, B. Liu, L. Y. Wang, and S. L. Feng. Switching reliability improvement of phase change memory with nanoscale damascene structure by ge2sb2te5cmp process. Electronics Letters , 44(4):322– 323, 2008. [194] M. Zhong, Z. T. Song, B. Liu, S. L. Feng, and B. Chen. Oxidant addition effect on ge2sb2te5 phase change film chemical mechanical polishing. Journal of the Electro- chemical Society , 155(11):H929–H931, 2008. [195] M. Zhong, Z. T. Song, B. Liu, S. L. Feng, and B. Chen. Reactive ion etching as cleaning method post chemical mechanical polishing for phase change memory device. Chinese Physics Letters , 25(2):762–764, 2008. [196] S. H. Lee, Y. N. Hwang, S. Y. Lee, K. C. Ryoo, S. J. Ahn, H. C. Koo, C. W. Jeong, Y.-T. Kim, G. H. Koh, G. T. Jeong, H. S. Jeong, and K. Kim. Full integration and cell characteristics for 64mb nonvolatile PRAM. In Symposium on VLSI Technology , pages 20–21, 2004. [197] K. Kim and S. J. Ahn. Reliability investigations for manufacturable high density PRAM. In IEEE Inter- national Reliability Physics Symposium , pages 157–162, 2005. [198] D. Mantegazza, D. Ielmini, A. Pirovano, B. Gleixner, A. L. Lacaita, E. Varesi, F. Pellizzer, and R. Bez. Electrical characterization of anomalous cells in phase change memory arrays. In IEDM Technical Digest , page S2P7, 2006. [170] Y.H. Shih, J.Y. Wu, B. Rajendran, M.H. Lee, R. Cheek, M. Lamorey, M. Breitwisch, Y. Zhu, E. K. Lai, C.F. Chen, E. Stinzianni, A. Schrott, E. Joseph, R. Dasaka, S. Raoux, H.L. Lung, and C. Lam. Mechanisms of re- tention loss in ge$_{2}$sb$_{2}$te$_{5}$–based phase–change memory. In IEDM Technical Digest , pages 9–01, 2008. [171] A. Itri, D. Ielmini, A. L. Lacaita, A. Pirovano, F. Pel- lizzer, and R. Bez. Analysis of phase–transformation dy- namics and estimation of amorphous–chalcogenide frac- tion in phase–change memories. In International Relia- bility Physics Symposium , pages 209–215, 2004. [172] Y.-Y. Liao and S.-F. Horng. Investigation of discrete dopant fluctuation effects in sub–45–nm siliconoxideni- trideoxidesilicon flash memory cell. Jap. J. Appl. Phys. , 48(2):021207, 2009. [173] R. Y. Kim, H. G. Kim, and S. G. Yoon. Structural prop- erties of Ge$_{2}$Sb$_{2}$Te$_{5}$ thin films by metal organic chemical vapor deposition for phase change memory applications. Applied Physics Letters , 89(10):102107, 2006. [174] R. Y. Kim, H. G. Kim, and S. G. Yoon. Characterization of ge1–xtex chalcogenide thin films deposited by mocvd for phase change memory applications. Journal of the Electrochemical Society , 155(2):D137–D140, 2008. [175] J. Lee, S. Choi, C. Lee, Y. Kang, and D. Kim. Gesbte deposition for the pram application. Applied Surface Science , 253(8):3969–3976, 2007. [176] T. Shintani, Y. Anzai, H. Minemura, H. Miyamoto, and J. Ushiyama. Nanosize fabrication using etching of phase–change recording films. Applied Physics Letters , 85(4):639, 2004. [177] Y. Anzai, T. Shintani, H. Minemura, H. Miyamoto, and J. Ushiyama. Macroscopic study on etching character- istics of phase–change recording films. In EPCOS 2004 , 2004. [178] Y. Lin, M. H. Hong, G. X. Chen, C. S. Lim, L. S. Tan, Z. B. Wang, L. P. Shi, and T. C. Chong. Hybrid laser micro/nanofabrication of phase change materials with combination of chemical processing. Journal of Materi- als Processing Technology , 192:340–345, 2007. [179] H. Y. Cheng, C. A. Jong, R. J. Chung, T. S. Chin, and R. T. Huang. Wet etching of Ge$_{2}$SbTe$_{5}$ films and switching properties of resultant phase change memory cells. Semi. Sci. Tech. , 20(11):1111–1115, 2005. [180] H. Y. Cheng, C. A. Jong, C. M. Lee, and T. S. Chin. Wet–etching characteristics of Ge$_{2}$Sb$_{2}$Te$_{5}$ thin films for phase–change memory. IEEE Trans. Magn. , 41(2):1031–1033, 2005. [181] S. M. Yoon, N. Y. Lee, S. O. Ryu, Y. S. Park, S. Y. Lee, K. J. Choi, and B. G. Yu. Etching characteristics of Ge$_{2}$Sb$_{2}$Te$_{5}$ using high–density helicon plasma for the nonvolatile phase–change memory applications. Jap. J. Appl. Phys. 2 , 44(24-27):L869–L872, 2005. [182] I. H. Park, J. W. Lee, and C. W. Chung. Investigation on etch characteristics of gesbte thin films for phase– change memory. Integrated Ferroelectrics , 80:207–218, 2006. [183] N. K. Min, M. Kim, K. H. Kwon, A. Efremov, H.- W. Lee, and S. Kim. Etch characteristics of ge2sb2te5 (gst), sio2 and a photoresist in an inductively coupled cl–2/ar plasma. Journal of the Korean Physical Society , 51(5):1686–1694, 2007. [184] K. Y. Yang, S. H. Hong, D. K. Kim, B. K. Cheong, and