US 10,698,314 B2  111  alkynes of 6 to 12 carbon atoms, and aromatic solvents.  Specifically, suitable alcohols of 3 to 10 carbon atoms  include n-propyl alcohol, isopropyl alcohol, I-butyl alcohol,  2-butyl alcohol, isobutyl alcohol, t-butyl alcohol, 1-penta› nol, 2-pentanol, 3-pentanol, t-pentyl alcohol, neopentyl  alcohol, 2-methyl-1-butanol, 3-methyl-1-butanol, 3-methyl- 3-pentanol, cyclopentanol, 1-hexanol, 2-hexanol, 3-hexanol,  2,3-dimethyl-2-butanol, 3,3-dimethyl-1-butanol, 3,3-dim› ethyl-2-butanol,  2-ethyl-1-butanol,  2-methyl-1-pentanol,  2-methyl-2-pentanol, 2-methyl-3-pentanol, 3-methyl-1-pen- tanol, 3-methyl-2-pentanol, 3-methyl-3-pentanol, 4-methyl- 1-pentanol,  4-methyl-2-pentanol,  4-methyl-3-pentanol,  cyclohexanol, and 1-octanol. Suitable ether compounds of 8  to 12 carbon atoms include di-n-butyl ether, diisobutyl ether,  di-s-butyl ether, di-n-pentyl ether, diisopentyl ether, di-s- pentyl ether, di-t-pentyl ether, and di-n-hexyl ether. Suitable  alkanes of 6 to 12 carbon atoms include hexane, heptane,  octane, nonane, decane, undecane, dodecane, methylcyclo› pentane, dimethylcyclopentane, cyclohexane, methylcyclo› hexane, dimethylcyclohexane, cycloheptane, cyclooctane,  and cyclononane. Suitable alkenes of 6 to 12 carbon atoms  include hexene, heptene, octene, cyclohexene, methylcyclo› hexene,  dimethylcyclohexene,  cycloheptene,  and  cyclooctene. Suitable alkynes of 6 to 12 carbon atoms  include hexyne, heptyne, and octyne. Suitable aromatic  solvents include toluene, xylene, ethylbenzene, isopropyl› benzene, t-butylbenzene and mesitylene. The solvents may  be used alone or in admixture.  Rinsing is effective for minimizing the risk of resist  pattern collapse and defect formation. However, rinsing is  not essential. If rinsing is omitted, the amount of solvent  used may be reduced.  A hole or trench pattern after development may be shrunk  by the thermal flow, RELACSfi or DSA process. A hole  pattern is shrunk by coating a shrink agent thereto, and  baking such that the shrink agent may undergo crosslinking  at the resist surface as a result of the acid catalyst diffusing  from the resist layer during bake, and the shrink agent may  attach to the sidewall of the hole pattern. The bake is  preferably at a temperature of 70 to 180°  C., more preferably  80 to 170°  C., for a time of 10 to 300 seconds. The extra  shrink agent is stripped and the hole pattern is shrunk.  Examples of the invention are given below by way of  illustration and not by way of limitation. The abbreviation  "pbw" is parts by weight.  Quenchers 1 to 12 in the form of quaternary ammonium  iodide, quaternary animonium dibromoiodide, quaternary  ammonium bromodiiodide or quaternary ammonium triio› dide having the following structure were used in resist  compositions. Of Quenchers 1 to 12, some were purchased  from Tokyo Chemical Industry Co., Ltd. or Sigma-Aldrich  and the remaining were prepared by neutralization reaction  of an ammonium hydroxide with hydriodic acid.  EXAMPLE  112  -continued  Quencher 2  Quencher 3  Quencher4  Quencher 5  Quencher 6  Quencher 7  I _,.,.  o/’--...../w.......___  i- Quencher 8  Quencher 9  Quencher 10  Quencher 1 