are lower for larger waveguide cross sections. As shown in Fig. 4(b), e.g., the losses for a bending radius of 20 $_{m}$m decrease from 2.9 dB/cm for the smallest waveguide cross section, w = 0 . 5 $_{m}$m and d = 0 . 8 $_{m}$m (red), to as low as 1 . 2 · 10 − 5 dB/cm for w = 0 . 8 $_{m}$m and d = 1 . 2 $_{m}$m (green). The bending losses are negligible for the bigger cross sections when compared to the propagation losses. The simulated bending loss for waveguides with high modal confinement and d = w = 0 . 8 $_{m}$m (blue) is only 0.7 dB/m for a bending radius of 20 $_{m}$m. In comparison, to obtain a similar bending loss from a waveguide with low modal confinement [8], the bending radius must be as large as 2 mm or more. Consequently, the density of waveguides circuits on a wafer can be increased by or- ders of magnitude using waveguides with a high confinement, which leads to a superior efficiency in the fabrication of Si$_{3}$N$_{4}$ waveguides. In conclusion, we have shown a novel way to fabricate TriPleX-based Si$_{3}$N$_{4}$ waveguides with a width of up 0.9 $_{m}$m, while having a depth of up to 1.2 $_{m}$m. This method is promising to achieve a high yield compared to previously reported approaches to fab- ricate Si$_{3}$N$_{4}$ waveguides of similar cross-section dimensions. The complete area of six wafers with a diameter of 100 mm was used to produce waveguide structures, while not a single stress-induced crack appeared during or after fabrication. The propagation losses are measured to lie below 0.4 dB/cm for waveguides with a depth of 0.8 $_{m}$m, while the bending losses were simulated to be below 0.01 dB/cm for a bending radius of 20 $_{m}$m, both for a quasi-TM mode at a wavelength of 1550 nm. The measured coupling efficiency and observed variation in coupling efficiency can be improved by implementing spot-size converters at either end of the waveguide. The spot size converter expands the mode field diameter, which makes the coupling easier and less sensitive for imperfections in the flatness of the end facet. This research is supported by the Dutch Technology Foundation STW, which is part of the Netherlands Organisation for Scientific Research (NWO), and which is partly Acknowledgments 4. Conclusion