US 2014/0030643 Al  67  Jan. 30, 2014  [0396]  As apparent from Table 2, the compositions of  Examples exhibited excellent performance as compared with  that of the compositions of Comparative Examples.  [0397]  <Preparation of Resist Composition>  [0398]  Components of Table 3 below were dissolved in a  solvent consisting of a 40:60 mixture of propylene glycol  monomethyl ether acetate and propylene glycol monomethyl  ether, thereby obtaining solutions each of 1.8 mass % solid  content. The solutions were each passed through a polytet› rafluoroethylene filterof0.03  µm  pore size, thereby obtaining  chemically amplified positive resist compositions (positive  resist solutions). In Table 3, the amount of each of the com› ponents is expressed by the mass% based on the total solids.  [0399]  <Evaluation of Resist (EUV)>  [0400]  Each of the above positive resist solutions was  applied onto a silicon substrate having undergone a hexam› ethyldisilazane treatment by means of a spin coater, and dried  by heating on a hot plate at 130°  C. for 90 seconds. Thus,  resist films of 50 nm average thickness were obtained.  [0401]  Each of the resist films was exposed to EUV light by  means of an EUV exposure apparatus (wavelength=13.5 nm,  NA=0.3). Immediately after the exposure, the film was baked  on a hot plate at 110°  C. for 90 seconds. The baked film was  developed with a 2.38 mass % aqueous tetramethylammo› nium hydroxide solution at 23°  C. for 30 seconds. After the  development, the film was rinsed with pure water for 30  seconds and dried. Thus, a line and space pattern (line:  space=  1:  1) was formed.  [0402]  (Sensitivity)  [0403]  The shape of cross section of obtained line and  space pattern was observed by means of a scanning electron  microscope (model S-9380 manufactured by Hitachi, Ltd.).  The sensitivity (Eopt) was defined as an exposure amount in  which a line of 35 nm width (line:space=l: 1) was resolved.  [0404]  (Shape of Pattern)  [0405]  With respect to the 35 nm line pattern (line:space=l:  1) realized in the irradiation amount exhibiting the above  sensitivity, the shape of cross section thereof was observed by  means of a scanning electron microscope (model S-4800  manufactured by Hitachi, Ltd.). The observed shape was  evaluated in the same manner as described above.  [0406]  (Roughness Characteristic; LWR)  [0407]  The above 35 nm line pattern (line:space=l:1) was  observed by means of a scanning electron microscope (model  S-9380, manufactured by Hitachi, Ltd.). The distance  between actual edge and a reference line on which edges were  to be present was measured at 50 points of equal intervals  within 2 µm  in the longitudinal direction of the pattern. The  standard deviation of measured distances was determined,  and  3a  was computed therefrom. This  3a  was denoted as  "LWR(nm)."  [0408]  (Residue)  [0409]  The above 100 nm line pattern (line: space= 1: 1) was  observed by means of a scanning electron microscope (model  S-9260, manufactured by Hitachi, Ltd.). The evaluation  marks o(good), ll(fair) and x(insufficient) were given when  no residue was found at all in the substrate surface of the space  portion, when 20% or less of the surface area of the space  portion was covered by residue and when 50% or more of the  space portion was covered by residue, respectively.  [0410]  The obtained evaluation results are given in Table 4  below.  [0411]  As apparent from Table 4, the compositions of  Examples also exhibited excellent performance upon expo› sure to EUV.  [0412]  <Preparation of Resist Composition>  [0413]  Components of Table 5 below were dissolved in a  solvent consisting of a 40:60 mixture of propylene glycol  monomethyl ether acetate and propylene glycol monomethyl  ether, thereby obtaining solutions each of 1.8 mass % solid  content. The solutions were each passed through a polytet› rafluoroethylene filterof0.03  µm  pore size, thereby obtaining  chemically amplified positive resist compositions (positive  resist solutions). In Table 5, the amount of each of the com› ponents is expressed by the mass% based on the total solids.  TABLE 2-continued  TABLE4  TABLES  Shape  Sensitivity  of  LWR  (mJ/cm 2 )  pattern  (nm)  Residue  Ex. 13  13.6  5.1  Ex. 14  12.2  4.7  Comp. Ex. 5  15.8  /\.(-)  6.1  X  Comp. Ex. 6  17.2  x(-)  8.5  X  Concom- Acid  itant  Resin  generator  Compd.  basic  Surfac- (P)  (Q)  (R)  compd.  tant  (mass%)  (mass%)  (mass%)  (mass%)  (mass%)  Ex. 13  A-1  B-1  C-1  W-1  (91.4)  (8.0)  (0.5)  (0.1)  Ex. 14  A-1  B-1  C-2  W-1  (91.4)  (8.0)  (0.62)  (0.1)  Comp. Ex. 5  A-1  B-1  C-A  W-1  (91.4)  (8.0)  (0.5)  (0.1)  Comp. Ex. 6  A-1  B-1  C-B  W-1  (91.4)  (8.0)  (0.5)  (0.1)  Shape  Resolution  Sensitivity  of  LWR  of isolated  (µC/cm 2 )  pattern  (nm)  Residue  pattern (nm)  Comp. Ex. 1  37  /\.(-)  6.0  X  62.5  Comp. Ex. 2  38  x(-)  7.2  X  87.5  Comp. Ex. 3  35  /\.(-)  6.3  LI.  67.5  Comp. Ex. 4  35  x(+)  8.6  100  Concom- Acid  itant  Resin  generator  Compd.  basic  Surfac- (P)  (Q)  (R)  compd.  tant  (mass%)  (mass%)  (mass%)  (mass%)  (mass%)  Ex. 15  A-1  B-1  C-1  W-1  (91.49)  (8.00)  (0.5)  (0.01)  Ex. 16  A-1  B-1  C-2  W-1  (91.37)  (8.00)  (0.62)  (0.01)  Comp. Ex. 7  A-1  B-1  C-A  W-1  (91.54)  (8.00)  (0.45)  (0.01)  Comp. Ex. 8  A-1  B-1  C-B  W-1  (91.60)  (8.00)  (0.39)  (0.01)  TABLE3 