96  95  US 8,614,033 B2  TABLE 6-continued  (Ex12osure to Electron Beam: Positive Ty12el  LS  IL  Resolving Resolving  Dry  Sensitivity  Power  Power  Pattern  LER  Etching  Example  Composition  (µC/cm 2 )  (nm)  (nm)  Profile  (nm) Resistance  !OP  PIO  11.8  50  45  rectangular  4.5  very good  llP  Pll  11.8  50  45  rectangular  4.5  very good  12P  P12  10.8  55  55  rectangular  5.0  very good  13P  P13  10.7  55  55  rectangular  5.0  very good  14P  P14  10.8  55  55  rectangular  5.0  very good  15P  P15  10.8  50  45  rectangular  5.0  very good  16P  P16  10.6  50  45  rectangular  5.0  very good  17P  P17  10.8  50  45  rectangular  4.5  very good  18P  P18  10.6  50  45  rectangular  4.5  very good  19P  P19  10.5  50  45  rectangular  4.5  very good  20P  P20  10.5  55  50  rectangular  4.5  very good  21P  P21  10.5  55  55  rectangular  4.5  very good  22P  P22  10.8  50  45  rectangular  4.5  good  Comparative Comparative  12.9  70  80  tapered  6.5  poor  Example lP  Composition  Pl  Comparative Comparative  12.9  70  80  slightly  6.0  poor  Example 2P  Composition  tapered  P2  From the results shown in Table 6, it can be seen that the  composition according to the present invention have a good  sensitivity, resolving power, pattern profile, LER and dry  etching resistance.  (II) Example as a Positive Chemical Amplification  Resist (EUV)  Examples 1 Q to SQ, and, Comparative Examples 1 Q  and2Q  Preparation of Resist Coating Solution  The positive resist compositions shown in the following  Table 7 were filtered through a polytetrafluoroethylene filter  having a pore size of0.04 µm  to obtain positive resist coating  solutions.  The prepared positive resist coating solution was uni- formly coated on a hexamethyldisilazane-treated silicon sub› strate by using a spin coater and dried by heating on a hot plate  at 100°  C. for 60 seconds to obtain a resist film having a film  thickness of0.05 µm.  Evaluation of Resist Pattern  The sensitivity, resolving power, pattern profile, line edge  roughness (LER) and  dry  etching resistance of the obtained  resist film were evaluated by the following methods.  [Sensitivity]  As for the obtained resist film, an exposure was performed  using EUV ray (13 nm of wavelength), while varying the  exposure amount, within a range of from Oto 20.0 mJ/cm $^{2 }$in  incrementof0.1 mJ/cm 2 ,  via 6%halftonemaskwitha 100nm  line width having a line and space pattern of 1: 1, and there› after, baking was conducted at 110°  C. for 90 seconds. There- after, the film was developed using 2.38% by mass of an  aqueous  solution  of tetramethylammonium hydroxide  (TMAH).  The exposure amount reproducing mask pattern having a  line and space of 100 nm line width (LIS=l/1) was defined as  the sensitivity. The smaller this value, the higher the sensitiv› ity.  [Resolving Power (LS)]  The limiting resolving power (the minimum line width  when the line and the space (line:space=l:1) were separated  and resolved) in the exposure amount showing the aforemen- tioned sensitivity was defined as LS resolving power (nm).  [Evaluation of Pattern Profile]  The cross-sectional profile of a line pattern having a 100  nm line width (LIS= 1 / 1) in the exposure amount showing the  aforementioned sensitivity was observed using a scanning  electron microscope (S-4300, available from Hitachi Ltd.). In  the cross-sectional profile, when the ratio represented by "the  line width in the bottom part of the line pattern (bottom)/the  line width in the middle part of the line pattern (half height  position of the height of the line pattern)" is 1.5 or more, it is  evaluated as "tapered"; when the ratio is at least 1.2 less than  1.5, it is evaluated as "slightly tapered"; and when the ratio is  less than 1.2, it is evaluated as "rectangular".  [Line Edge Roughness (LER)]  [Evaluation of Dry Etching Resistance]  With respect to the region of 50  µm in the longitudinal  direction of a line pattern having a 100 nm line width (LIS= 1/  1) in the exposure amount showing the aforementioned sen› sitivity, the distance from a reference line where the edge  should be present was measured at arbitrary 30 points by a  scanning electron microscope (S-9220, available from Hita› chi, Ltd.), and the standard deviation was determined, and  3a  was computed. It is shown that the smaller the value, the  performance is better.  An unexposed resist film was subjected to dry etching  using anAr/C$_{4}$ F  $_{6}$/0$_{2}$ =gas (a mixed gas having a volume ratio  100/4/2) for 30 seconds with HITACHI U-621. Thereafter,  the residual film rate of the resist was measured and this value  is used as an index of evaluating dry etching resistance.  Very good: 95% or more of residual film rate  Good: at least 90% less than 95%  Poor: less than 90%  The results of the evaluation described above are shown in  Table 7. 