US 20190064665Al  c19)  United States  c12)  Patent Application Publication  Fujiwara et al.  c10)  Pub.  No.: US  2019/0064665 Al  (43)  Pub. Date:  Feb. 28, 2019  (54)  SULFONIUM COMPOUND, RESIST  COMPOSITION, AND PATTERNING  PROCESS  (71)  Applicant:  Shin-Etsu Chemical Co., Ltd.,  Tokyo  (JP)  (72)  Inventors:  Takayuki Fujiwara,  Joetsu-shi (JP);  Ryo Mitsui,  Joetsu-shi (JP);  Masaki  Ohashi,  Joetsu-shi (JP);  Ryosuke  Taniguchi,  Joetsu-shi (JP);  Koji  Hasegawa,  Joetsu-shi (JP)  (73)  Assignee:  Shin-Etsu Chemical Co., Ltd.,  Tokyo  (JP)  (21)  Appl. No.:  16/108,645  (22)  Filed:  Aug. 22, 2018  (52)  U.S. Cl.  CPC ............  G03F  71066  (2013.01);  C07C 323/64  (2013.01);  G03F  710048  (2013.01);  G03F  71033  (2013.01)  (51)  Int. Cl.  Publication Classification  (30)  Foreign Application Priority Data  (57)  ABSTRACT  A resist composition comprising a sulfonium compound of  specific structure as PAG has excellent lithography perfor› mance factors such as minimal defects, high sensitivity,  improved LWR and  CDU, and is a quite effective resist  material for precise micropatteming.  G03F  7106  G03F  71033  G03F  71004  (2006.01)  (2006.01)  (2006.01)  Aug. 24, 2017  (JP) ................................. 2017-161031  O’;  &  ~  ....  .,,  1D  0  - ci  ci  ,,,.  ’  I  g  l:\i  ~  (Q  0  a  co  (Q  LO  X  o;  0  co  .,..  ....  ....  C>  ci  0  ci  d  ci  ,  ,  I  I  !  l I  !  PPM 