US 2014/0030643 Al  1  Jan. 30,  2014  ACTINIC-RAY-OR RADIATION-SENSITIVE  RESIN COMPOSITION, ACTINIC-RAY- OR  RADIATION-SENSITIVE RESIN FILM  THEREFROM AND METHOD OF FORMING  PATTERN USING THE COMPOSITION  CROSS-REFERENCE TO RELATED  APPLICATION  BACKGROUND OF THE INVENTION  Non-Patent Literature  PRIOR ART LITERATURE  Patent Reference  BRIEF SUMMARY OF THE INVENTION  [0001]  This application is a Continuation Application of  PCT Application No. PCT/JP2012/059300, filed Mar. 29,  2012 and based upon and claiming the benefit of priority from  prior Japanese Patent Applications No. 2011-076093, filed  Mar. 30, 2011, the entire contents of all of which are incor› porated herein by reference.  [0002]  1. Field of the Invention  [0003]  The present invention relates to an actinic-ray- or  radiation-sensitive resin composition, an actinic-ray- or  radiation-sensitive resin film therefrom and a method of  forming a pattern using the composition. More particularly,  the present invention relates to a composition that is suitable  for use in, for example, an ultramicrolithography process  applicable to a process for manufacturing a super-LSI or a  high-capacity microchip, a process for fabricating a nanoim› print mold, a process for producing a high-density informa› tion recording medium, etc., and other photofabrication pro› cesses, and relates to a relevant film and method of forming a  pattern. Further more particularly, the present invention  relates to a composition, film and method of forming a pattern  that can find appropriate application in, for example, the  microfabrication of semiconductor devices by electron  beams or soft X-rays such as EUV light.  [0004]  2. Background Art  [0005]  Description of the Related Art  [0006]  In the microfabrication by lithography, in recent  years, the formation of an ultrafine pattern on the order of tens  of nanometers is increasingly required in accordance with the  realization ofhigh integration for integrated circuits. In accor› dance with this requirement, the trend of exposure wave› length toward a short wavelength, for example, from g-rays to  i-rays and further to a KrF excimer laser light is seen. More› over, now, the development of lithography using electron  beams, X-rays or EUV light besides the excimer laser light is  progressing.  [0007]  Further, the microfabrication using a resist compo› sition is not only directly used in the manufacturing of inte› grated circuits but also, in recent years, finds application in  the fabrication of so-called imprint mold structures, etc. (see,  for example, patent reference 1 and non-patent reference 1 ).  [0008]  Basic compounds may be added to the resist com› positions (see, for example, patent references 2 to 10). Basic  compounds fulfill the role of, for example, quenching any  deprotection reaction by an acid generated upon exposure.  [0009]  In recent years, the lithography using X-rays, soft  X-rays or electron beams is positioned as the next-generation  or next-next-generation pattern forming technology. When  this lithography technology is applied, it is especially an  important task to simultaneously attain high sensitivity and  favorable performance in pattern shape, roughness character› istic and reduction of residue defects.  [0027]  in the formulae,  [0028]  each of R$_{1 }$ and R$_{8 }$ independently represents an  organic group containing no heteroatom,  [0029]  each ofR$_{2}$ ,  R$_{3}$ ,  R$_{5 }$ and R$_{6 }$ independently represents  an alkylene group having 1 to 3 carbon atoms,  [0030]  each ofR$_{4 }$ and R$_{7 }$independently represents a hydro› gen atom or an alkyl group, and  [0025]  a compound (Q) that when exposed to actinic rays or  radiation, generates an acid, and  [0024]  a resin (P) containing an acid-decomposable repeat› ing unit (A), which resin when acted on by an acid, increases  its solubility in an alkali developer,  [0026]  a compound (R) expressed by general formula (1) or  (2) below,  [0023]  [1] An actinic-ray- or radiation-sensitive resin com› position comprising:  [0022]  The inventors have conducted extensive and inten› sive studies with a view toward attaining the above object. As  a result, the following inventions have been completed.  [0021]  It  is an object of the present invention to provide an  actinic-ray- or radiation-sensitive resin composition that can  attain high sensitivity, favorable pattern shape, favorable  roughness characteristic and reduction of residue defects.  It  is  further objects of the present invention to provide an actinic› ray- or radiation-sensitive resin film therefrom and a method  of forming a pattern using the composition.  [0020]  Non-patent reference 1: "Fundamentals of nanoim› print and its technology development/application deploy› ment-technology of nanoimprint substrate and its latest  technology deployment" edited by Yoshihiko Hirai, pub› lished by Frontier Publishing (issued in June, 2006).  [0010]  Patent reference  1:  Jpn. Pat. Appln. KOKAI Publi- cation No. (hereinafter referred to as JP-A-) 2008-162101,  [0011]  Patent reference 2: U.S. Pat. No. 5,916,728,  [0012]  Patent reference 3: JP-A-Hl0-177250,  [0013]  Patent reference 4: JP-A-H5-232706,  [0014]  Patent reference 5: JP-A-Hl0-326015,  [0015]  Patent reference 6: European Patent No. 881539,  [0016]  Patent reference 7: JP-A-2004-046157,  [0017]  Patent reference 8: U.S. Pat. No. 6,274,286,  [0018]  Patent reference 9: JP-A-Hll-084639, and  [0019]  Patent reference 10: JP-A-2008-065296.  (1)  (2) 