(IO)  Patent No.:  US 8,614,033 B2  (45)  Date of Patent:  Dec. 24, 2013  c12)  United States Patent  Tsuchimura et al.  (54)  RESIST FILM, RESIST COATED MASK  BLANKS AND METHOD OF FORMING  RESIST PATTERN USING THE RESIST FILM,  AND CHEMICAL AMPLIFICATION TYPE  RESIST COMPOSITION  (75)  Inventors:  Tomotaka Tsuchimura,  Haibara-gun  (JP);  Takeshi Inasaki,  Haibara-gun (JP);  Hiroo Takizawa,  Haibara-gun (JP)  (73)  Assignee:  FUJIFILM Corporation,  Tokyo (JP)  ( *)  Notice:  Subject to any disclaimer, the term ofthis  patent is extended or adjusted under 35  U.S.C. 154(b) by 32 days.  (21)  Appl. No.:  13/367,512  (22)  Filed:  Feb.7,2012  (51)  Int. Cl.  G03F 1120  G03C 5100  (2012.01)  (2006.01)  (52)  U.S. Cl.  USPC .............  430/5;  430/270.1; 430/296; 430/942  ( 58)  Field of Classification Search  USPC ................................... 430/5, 270.1, 296, 942  See application file for complete search history.  20 Claims, No Drawings  (57)  ABSTRACT  OTHER PUBLICATIONS  FOREIGN PATENT DOCUMENTS  (65)  Prior Publication Data  (30)  Foreign Application Priority Data  (56)  References Cited  U.S. PATENT DOCUMENTS  2007/0117043 Al  2008/0090179 Al  2010/0227273 Al  2010/0227274 Al  2011/0159433 Al  5/2007 Gonsalves  4/2008 Takeda et al.  9/2010 Hatakeyama et al.  9/2010 Hatakeyama et al.  6/2011 Takahashi et al.  JP  JP  JP  JP  JP  JP  JP  JP  JP  JP  JP  JP  JP  JP  WO  5-307262 A  11/1993  8-015863 A  1/1996  2000-171977 A  6/2000  2002-156762  A  5/2002  2005-099558  A  4/2005  2006506480  A  2/2006  2007140289  A  6/2007  2008-095009  A  4/2008  2008102509  A  5/2008  2008-162101  A  7/2008  2009-086354  A  4/2009  2010-085971  A  4/2010  2010237661  A  10/2010  2010237662  A  10/2010  2004044017 Al  5/2004  US008614033B2  Office Action dated May 6, 2013 from the Taiwanese Patent Office in  a Taiwanese Application No. 101102071.  Primary Examiner  - Christopher Young  (74)  Attorney, Agent, or Firm  - Sughrue Mion, PLLC  A resist film formed by using a chemical amplification type  resist composition containing (A) a high molecular com› pound having a structure wherein a hydrogen atom of a phe› nolic hydroxyl group is substituted by a group represented by  the following general formula (I), (B) a compound generating  an acid upon irradiation with actinic rays or radiation, and an  organic solvent, and the film thickness is 10 to 200 nm.  wherein, R$_{1 }$ represents a hydrocarbon group, R$_{2 }$ represents a  hydrogen atom or a hydrocarbon group, and Ar represents an  aryl group. R$_{1 }$may also bind to Ar to form a ring which may  also contain a heteroatom.  * represents a binding position  with an oxygen atom of the phenolic hydroxyl group.  Feb. 21, 2011  (JP) ................................. 2011-035229  US 2012/0214091 Al  Aug. 23, 2012  (I) 