US 2020/0117085 Al  13  Apr. 16, 2020  wherein, in Chemical Formula 3 to Chemical Formula 4,  R 1  is selected from a substituted or unsubstituted Cl to  C20 alkyl group, a substituted or unsubstituted C3 to  C20 cycloalkyl group, a substituted or unsubstituted C2  to C20 alkenyl group, a substituted or unsubstituted C2  to C20 alkynyl group, a substituted or unsubstituted C6  to C30 aryl group, a substituted or unsubstituted C6 to  C30 benzyl group, and-Rc-O-Rd, wherein Rc is a  substituted or unsubstituted Cl to C20 alkylene group  and  Rd  is a substituted or unsubstituted Cl to C20 alkyl  group,  R$^{33 }$are each independently selected from a substituted or  unsubstituted Cl to Cl0 alkyl group, a substituted or  unsubstituted C3 to C20 cycloalkyl group, a substituted  or unsubstituted C2 to CS alkenyl group, a substituted  or unsubstituted C2 to CS alkynyl group, and a substi› tuted or unsubstituted C6 to C30 arylalkyl group, and  R 22 , R 23 , R 24 , R 32 , and R 34  are each independently  selected from hydrogen, a substituted or unsubstituted  Cl to Cl0 alkyl group, a substituted or unsubstituted  C3 to C20 cycloalkyl group, a substituted or unsubsti› tuted C2 to CS alkenyl group, a substituted or unsub› stituted C2 to CS alkynyl group, and a substituted or  unsubstituted C6 to C30 arylalkyl group.  7.  The semiconductor resist composition of claim  5,  wherein R $^{1 }$is selected from a substituted or unsubstituted Cl  to Cl 0 alkyl group, a substituted or unsubstituted C3 to C20  cycloalkyl group, a substituted or unsubstituted C3 to C20  alkenyl group, a substituted or unsubstituted C3 to C20  alkynyl group, and  -Rc-0-Rd,  wherein Rc is a substi› tuted or unsubstituted Cl to C20 alkylene group and  Rd  is a  substituted or unsubstituted Cl to C20 alkyl group.  8.  The semiconductor resist composition of claim  1,  wherein the composition further comprises an additive  selected from a surfactant, a cross-linking agent, a leveling  agent, and combinations thereof.  9.  The semiconductor resist composition of claim  8,  wherein the surfactant is selected from an alkyl benzene  sulfonate salt, an alkyl pyridinium salt, polyethylene glycol,  a quaternary ammonium salt, and combinations thereof.  10.  The semiconductor resist composition of claim  8,  wherein the cross-linking agent is a melamine-based, sub› stituted urea-based, or a polymer-based cross-linking agent.  11.  The semiconductor resist composition of claim  1,  further comprising a silane coupling agent as an adherence  enhancer.  12.  The semiconductor resist composition of claim  1,  wherein the organometallic compound is represented by at  least one of Chemical Formula 5 to Chemical Formula 13:  Chemical Formula 5  0  OA  I  ~  Sn -0  yb)- 0  -continued  Chemical Formula 6  Chemical Formula 7  Chemical Formula 8  Chemical Formula 9  Chemcial Formula 10 