293  US 9,323,153 B2  294  -continued  wherein, in the general formula (A),  7.  An  actinic ray-sensitive or radiation-sensitive film com› prising the actinic ray-sensitive or radiation-sensitive resin  composition according to claim  1.  8.  A pattern forming method comprising: forming a film  including a composition according to claim  1,  irradiating the  film with actinic rays or radiation, and developing the irradi› ated film with actinic rays or radiation.  9.  The pattern forming method according to claim  8,  wherein the actinic rays or radiation is EUV light.  10.  An  actinic ray-sensitive or radiation-sensitive resin  composition comprising a nitrogen-containing compound  (N) which is represented by any of the following general  formulas, and, at least one of  11.  The actinic ray-sensitive or radiation-sensitive resin  composition according to claim  10,  wherein R$_{3 }$is a hydrogen  atom or ----COOR$_{4 }$ and a carbon atom in R$_{4 }$ which is bonded  to the --COO group in -COOR$_{4 }$ is a tertiary carbon atom.  12.  The actinic ray-sensitive or radiation-sensitive resin  composition according to claim  10,  wherein R$_{3 }$is a hydrogen  atom or -COO R$_{4 }$ and R$_{4 }$ is a tertiary alky 1 group having 5 or  more carbon atoms.  13.  The actinic ray-sensitive or radiation-sensitive resin  composition according to claim  10,  wherein R$_{3 }$ is -COOR$_{4 }$ and R$_{4 }$ is t-amyl.  14.  The actinic ray-sensitive or radiation-sensitive resin  composition according to claim  10,  wherein the resin (Ab)  contains at least one kind of repeating unit (A) which is  represented by the following general formula (A):  wherein, in the general formula (A),  15.  An  actinic ray-sensitive or radiation-sensitive film  comprising the actinic ray-sensitive or radiation-sensitive  resin composition according to claim  10.  16.  A pattern forming method comprising: forming a film  including a composition according to claim  10,  irradiating the  film with actinic rays or radiation, and developing the irradi› ated film with actinic rays or radiation.  17.  The pattern forming method according to claim  16,  wherein the actinic rays or radiation is EUV light.  *  *  *  *  *  R$_{4}$ i, R$_{42 }$and R$_{43 }$each independently represents a hydrogen  atom, an alkyl group, a cycloalkyl group, a halogen  atom, a cyano group or an alkoxycarbonyl group, and,  R$_{42 }$may be bonded to Ar$_{4 }$ to form a ring and in this case,  R$_{42 }$represents a single bond or an alkylene group;  X$_{4 }$ represents a single bond, -COO-or----CONR$_{64}$ , and,  R$_{64 }$represents a hydrogen atom or an alkyl group;  L$_{4 }$ represents a single bond or an alkylene group;  Ar$_{4 }$ represents a (n+ 1 )-valent aromatic ring group and in a  case of being bonded to R$_{42 }$to form a ring, represents a  (n+2)-valent aromatic ring group; and  n represents an integer of 1 to 4.  wherein, in the general formulas, R$_{3 }$represents a hydrogen  atom or-COOR$_{4 }$ and R$_{4 }$ represents an alkyl group, an  aryl group, an aralkyl group, an alkenyl group or a  cycloalkyl group.  R$_{41}$ , R $_{42 }$and R$_{43 }$each independently represents an hydro› gen atom, an alkyl group, a cycloalkyl group, a halogen  atom, a cyano group or an alkoxycarbonyl group, and,  R$_{42 }$may be bonded to Ar$_{4 }$ to form a ring and in this case,  R$_{42 }$represents a single bond or an alkylene group;  X$_{4 }$represents a single bond, --COO-or----CONR$_{64}$ , and,  R$_{64 }$represents a hydrogen atom or an alkyl group;  L$_{4 }$ represents a single bond or an alkylene group;  Ar$_{4 }$ represents a (n+ 1 )-valent aromatic ring group and in a  case of being bonded to R$_{42 }$to form a ring, represents a  (n+2)-valent aromatic ring group; and  n represents an integer of 1 to 4.  a resin (Ab) of which the polarity changes by the action of  an acid, containing a repeating unit (B) having a struc› tural site which generates an acid by irradiation with  actinic rays or radiation and  a compound which generates an acid by irradiation with 55  actinic rays or radiation:  ~I ~3  I  I  -----fC-C-,- 1  I  ~2  Xi  I  L4  I  Ar4  I  (OH)n  ~I  ~3  I  I  -----f  c-c-,- 1  I  ~2  Xi  I  Ar4  I  (OH)n  (A)  (A) 