US 20140199617Al  c10) Pub. No.: US 2014/0199617 Al  (43) Pub. Date:  Jul.  17, 2014  c19)  United States  c12)  Patent Application Publication  TSUBAKI et al.  (54)  PATTERN-FORMING METHOD, ELECTRON  BEAM-SENSITIVE OR EXTREME  ULTRAVIOLET RADIATION-SENSITIVE  RESIN COMPOSITION, RESIST FILM,  MANUFACTURING METHOD OF  ELECTRONIC DEVICE USING THEM AND  ELECTRONIC DEVICE  (71)  Applicant:  FUJIFILM CORPORATION,  TOKYO  (JP)  (72)  Inventors:  Hideaki TSUBAKI,  Shizuoka (JP);  Hiroo TAKIZAWA,  Shizuoka (JP);  Takeshi KAWABATA,  Shizuoka (JP)  (73)  Assignee:  FUJIFILM CORPORATION,  TOKYO  (JP)  (21)  Appl. No.:  14/227,444  (22)  Filed:  Mar. 27, 2014  (63)  Continuation of application No. PCT/JP2012/072285,  filed on Aug. 28, 2012.  (52)  U.S. Cl.  CPC .  G03F  7120  (2013.01);  G03F  71038  (2013.01)  USPC .............  430/18;  430/296; 430/325; 430/319;  430/270.1; 430/285 .1  (51)  Int. Cl.  G03F  7120  G03F  71038  (2006.01)  (2006.01)  Publication Classification  (57)  ABSTRACT  Related U.S. Application Data  (30)  Foreign Application Priority Data  Sep.30,2011  (JP) ................................. 2011-218549  A pattern-forming method includes in this order: step (1) of  forming a film with an electron beam-sensitive or extreme  ultraviolet radiation-sensitive resin composition that contains  (A) a resin having an acid-decomposable repeating unit and  capable of decreasing a solubility of the resin (A) in a devel› oper containing an organic solvent by an action of an acid and  (B) a low molecular weight compound capable of generating  an acid upon irradiation with an electron beam or extreme  ultraviolet radiation and decomposing by an action of an acid  to decrease a solubility of the low molecular weight com› pound (B) in an organic solvent; step (2) of exposing the film  with an electron beam or extreme ultraviolet radiation; and  step ( 4) of developing the film with a developer containing an  organic solvent after the exposing to form a negative pattern. 