272  271  US 9,551,933 B2  A coating solution composition having a solid content  concentration of 2.5 mass  % according to the formulation  shown in Table 5 below was microfiltered through a mem› brane filter having a pore size of0.05  µm  to obtain an actinic  ray-sensitive or radiation-sensitive resin composition (resist  composition) solution.  (6) EUV Exposure and Development  The resist film-coated wafer obtained in (5) above was  patternwise exposed through an exposure mask (line/  space=4/1) by using an EUV exposure apparatus (Micro  Exposure Tool, manufactured by Exitech, NA: 0.3, X-di› pole, outer sigma: 0.68, inner sigma: 0.36). After the irra› diation, the wafer was heated on a hot plate at 110°  C. for  60 seconds, then developed by puddling the organic devel› oper shown in the Table below for 30 seconds, rinsed by  using the rinsing solution shown in the Table below, spun at  a rotation speed of 4,000 rpm for 30 seconds and baked at  90° C. for 60 seconds to obtain an isolated space resist  pattern of line/space=4: 1.  (7) Evaluation of Resist Pattern  Using a scanning electron microscope (S-9380II, manu› facture by Hitachi Ltd.), the obtained resist pattern was  evaluated for sensitivity, resolution and space width rough› ness performance by the following methods.  (7 -1) Sensitivity  This actinic ray-sensitive or radiation-sensitive resin com› position was coated on a 6-inch Si wafer previously sub› jected to a hexamethyldisilazane (HMDS) treatment, by  using a spin coater, Mark 8, manufactured by Tokyo Elec- tron Ltd. and dried on a hot plate at 100°  C. for 60 seconds  to obtain a resist film having a thickness of 50 nm.  Incidentally, with respect to Examples 3-60 to 3-63, the  following evaluations were performed by further incorpo› rating a hydrophobic resin (HR) as shown in Table 4 below.  The polymer structure of each hydrophobic resin (HR) is as  illustrated above as specific examples. Also, in the Table  below, the compositional ratio corresponds to the composi› tional ratio (mo!  % ) of respective repeating units starting  from the left in each polymer structure illustrated above.  The irradiation energy below which a pattern of line/  space= 1: 1 having a line width of 50 nm cannot be resolved  was taken as the sensitivity (Eop ). A smaller value indicates  higher performance.  (7-2) Resolution in Isolated Space  The limiting resolution (the minimum space width below  which a line and a space cannot be separated and resolved)  of an isolated space (line/space=4:1) at Eop above was  determined. This value was taken as "resolution (nm)". A  smaller value indicates higher performance.  (7-3) Space Width Roughness  With respect to the space width roughness, the space  width was measured at arbitrary 50 points in the longitudinal  0.5 µm region of an isolated space resist pattern of line/  space=4:1 at Eop above and after determining the standard  deviation thereof,  3a  was computed. A smaller value indi› cates higher performance  TABLE 5  TABLE 4  Kind, Compositional Ratio, Molecular Weight  and Polydispersity of Hydrophobic Resin (HR)  Hydrophobic  Compositional Ratio  Weight Average  Resin (HR)  (mo!%)  Molecular Weight  Polydispersity  HR-12  70  30  16000  1.55  HR-24  50  50  20000  1.6  HR-28  80  20  5000  1.45  HR-1  90  10  8000  1.5  HR-29  10  90  12000  1.47  HR-31  15  75  10  13000  1.44  HR-32  10  80  10  11000  1.43  HR-33  15  85  10000  1.52  Isolated  Space  Photoacid  Basic  Hydrophobic  Solvent  Space  Width  Resin  Generator  Compound Resin  (mass  Surfactant  Rinsing Sensitivity Resolution Roughness  (mass%)  (mass%)  (mass%)  (HR)  ratio)  (mass%)  Developer Solution (mJ/cm 2 )  (nm)  (nm)  Example 3-1  P-1  z115  N-6  Sl/S2  W-4  SG-3  24.8  40  6  77.99  20  2  80/20  0.01  Example 3-2  P-2  z115  N-6  Sl/S2  W-4  SG-3  21.6  32  5  77.99  20  2  80/20  0.01  Example 3-3  P-3  z115  N-6  Sl/S2  W-4  SG-3  13.8  28  4.1  77.99  20  2  80/20  0.01  Example 3-4  P-4  z115  N-6  Sl/S2  W-4  SG-3  14.4  29  4  77.99  20  2  80/20  0.01  Example 3-5  P-5  z112  N-8  Sl/S2  W-2  SG-3  17.8  30  4.5  77.99  20  2  80/20  0.01  Example 3-6  P-6  z113  N-9  Sl/S2  W-4  SG-3  18.3  31  4.6  77.99  20  2  60/40  0.01  Example 3-7  P-7  z108  N-9  Sl/S2  W-4  SG-3  21.1  32  4.8  87.99  10  2  80/20  0.01  Example 3-8  P-8  z108  N-9  Sl/S2  W-4  SG-3  13.6  28  4  77.99  20  2  80/20  0.01  Example 3-9  P-9  z108  N-9  Sl/S2  W-4  SG-3  13.9  28  4.3  77.99  20  2  80/20  0.01  Example 3-10  P-10  z115  N-8  Sl/S2  W-4  SG-3  10.8  26  3.5  77.99  20  2  80/20  0.01  Example 3-11  P-11  z115  N-8  Sl/S2  W-4  SG-3  10.9  26  3.6  77.99  20  2  80/20  0.01  Example 3-12  P-11/12 - 1:1 z121  N-8  Sl/S2  W-4  SG-3  11  26  3.7  (by mass)  77.99  20  2  80/20  0.01  Example 3-13  P-13  zll 7  N-4  Sl/S2  none  SG-3  15.2  29  4.1  76.00  20  4  80/20  Example 3-14  P-14  z118  N-3  Sl/S2  W-4  SG-3  15.6  29  4.3  77.99  20  2  80/20  0.01 