(12)  United States Patent  Endo et al.  (10)  Patent No.:  US 6,913,873 B2  (45)  Date of Patent:  Jul. 5, 2005  US006913873B2  (54)  PATTERN FORMATION METHOD  (75)  Inventors:  Masayuki Endo,  Osaka (JP);  Masaru  Sasago,  Osaka (JP)  (73)  Assignee:  Matsushita Electric Industrial Co.,  Ltd.,  Osaka (JP)  ( *)  Notice:  Subject to any disclaimer, the term of this  patent is extended or adjusted under 35  U.S.C. 154(b) by 236 days.  (21)  Appl. No.:  10/279,063  (22)  Filed:  Oct. 24, 2002  ( 65)  Prior Publication Data  US 2003/0087194 Al May 8, 2003  (30)  Foreign Application Priority Data  Oct. 31, 2001  (JP) ....................................... 2001-334253  (51)  Int. Cl.7  ..................................................  G03F 7/00  (52)  U.S. Cl.  .....................  430/322;  430/270.1; 430/296  (58)  Field of Search  .............................. 430/270.1, 296,  430/311, 322  (56)  References Cited  U.S. PATENT DOCUMENTS  5,558,976 A  *  9/1996 Urano et al. ................ 430/326  6,033,826 A  *  3/2000 Urano et al. ............. 430/270.1  6,358,665  Bl  *  3/2002 Pawlowski et al. ...... 430/270.1  FOREIGN PATENT DOCUMENTS  OTHER PUBLICATIONS  (57)  ABSTRACT  6 Claims, 4 Drawing Sheets  JP  2002-169291 A  6/2002  "High Performance EB Chemically Amplified Resist Using  Alicyclic Protetive Groups"; Jun-Ichi Kon et al.; SPIE,  v3999(2000);p. 1207-1214.  *  *  cited by examiner  Primary Examiner-Kathleen  Duda  (74)  Attorney, Agent, or Firm-McDermott  Will  & Emery  LLP  A resist film is formed from a chemically amplified resist  material including a phenol polymer, an acrylic polymer and  an onium salt serving as an acid generator. The resist film is  selectively irradiated for pattern exposure with extreme UV  of a wavelength of a 1 nm through 30 nm band or an electron  beam, and is developed after the pattern exposure, so as to  form a resist pattern. 