Mar. 26, 2015  141  US 2015/0086912 Al  TABLE 5-continued  Results of evaluations ofEUV exposure/organic solvent development  Concen- tration  of All the  Concen- Solid  Example  tration  Content  Rinsing  Sensitivity Resolution  Pattern  LER  Outgas  No.  Surfactant  (wt%)  (wt%)  Developer  Solution  (µC/cm 2 )  (nm)  Profile  (nm)  Collapse Performance  Example 77  W-1  0.05  4.0  G-1  None  55.0  38  Rectangle  6.2  A  2.8  Example 78  W-1  0.05  4.0  G-1  None  50.0  34  Rectangle  6.4  A  3.3  Example 79  W-2  0.05  4.0  G-1  G-6  48.0  35  Rectangle  6.9  A  2.8  Example 80  W-1  0.05  4.0  G-1  None  52.0  40  Rectangle  6.0  A  2.7  Example 81  W-1  0.05  4.0  G-4  None  55.0  38  Rectangle  6.8  A  4.5  Example 82  W-2  0.05  4.0  G-1  None  58.0  34  Rectangle  5.9  A  4.4  Example 83  W-1  0.05  4.0  G-1  None  57.0  35  Rectangle  6.2  A  3.3  Example 84  W-1  0.05  4.0  G-1  G-5  53.0  36  Rectangle  5.5  A  2.1  Example 85  W-4  0.05  4.0  G-3  None  50.0  36  Rectangle  5.8  A  2.8  Example 86  W-2  0.05  4.0  G-1  None  58.0  34  Rectangle  6.0  A  3.8  Example 87  W-1  0.05  4.0  G-1  None  55.0  36  Rectangle  5.8  A  3.8  Example 88  W-2  0.05  4.0  G-1  G-5  52.0  35  Rectangle  5.9  A  3.5  Example 89  W-3  0.05  4.0  G-2  None  54.0  33  Rectangle  6.5  A  3.9  Example 90  None  0.05  4.0  G-4  G-5  55.0  39  Rectangle  7.0  A  4.0  Comparative  W-1  0.05  4.0  G-1  None  65.0  45  Reverse  8.2  B  7.8  Example 14  taper  Comparative  W-2  0.05  4.0  G-1  G-5  60.0  42  Reverse  8.5  B  4.5  Example 15  taper  Comparative  W-1  0.05  4.0  G-2  None  58.0  46  Reverse  8.8  B  4.8  Example 16  taper  Comparative  W-3  0.05  4.0  G-1  None  62.0  45  Reverse  8.2  B  4.8  Example 17  taper  Comparative  W-1  0.05  4.0  G-1  None  60.0  43  Reverse  8.4  B  4.5  Example 18  taper  The concentration of each component shows the concentration(% by mass) in concentration of the entire solid content.  [0556]  From the results shown in the above Tables, it is  clearly seen that the actinic ray-sensitive or radiation-sensi› tive resin compositions in Examples 1 to 17 and 29 to 47  realize, at the same time, high sensitivity, high resolution, a  good pattern profile, inhibition of pattern collapse, good line  edge roughness, and good outgas performance in EB expo› sure and alkali development, as compared with Comparative  Examples 1 to 5 not containing repeating unit (A). Further,  the actinic ray-sensitive or radiation-sensitive resin composi› tions in which the number of atoms for constituting the main  structure of the alkylene group, alkenylene group, divalent  aliphatic hydrocarbon cyclic group, divalent aromatic cyclic  group, or a group formed by combining two or more of these  groups represented by L$_{1 }$ in formula  (I)  is 2 to 7 can realize  further good line edge roughness.  [0557]  Also, it is clearly seen that the actinic ray-sensitive  or radiation-sensitive resin compositions in Examples 18 to  28 and 48 to 60 realize, at the same time, high sensitivity, high  resolution, a good pattern profile, inhibition of pattern col› lapse, good line edge roughness, and good outgas perfor› mance in EUV exposure and alkali development, as com› pared with Comparative Examples 6 to 8 not containing  repeating unit (A).  [0558]  Also, it is clearly seen that the actinic ray-sensitive  or radiation-sensitive resin compositions in Examples 61 to  7 6 realize, at the same time, high sensitivity, high resolution,  a good pattern profile, inhibition of pattern collapse, good line  edge roughness, and good outgas performance even in EB  exposure and organic solvent development, as compared with  Comparative Examples 9 to 13 not containing repeating unit  (A).  [0559]  Also, it is clearly seen that the actinic ray-sensitive  or radiation-sensitive resin compositions in Examples 77 to  90 realize, at the same time, high sensitivity, high resolution,  a good pattern profile, inhibition of pattern collapse, good line  edge roughness, and good outgas performance even in EUV  exposure and organic solvent development, as compared with  Comparative Examples 14 to 18 not containing repeating unit  (A).  [0560]  According to the invention, it is possible to provide  an actinic ray-sensitive or radiation-sensitive resin composi› tion capable of satisfying high sensitivity, high resolution,  good pattern profile, and good line edge roughness on a high  level at the same time, controlled in pattern collapse in a  rinsing process, and having sufficiently satisfactory outgas  properties at the time of exposure. According to the invention,  it is also possible to provide a resist film using the same  compos1t10n, a pattern forming method, a manufacturing  method of a semiconductor device, and a semiconductor  device.  [0561]  This application is based on a Japanese patent appli› cation filed on May 31, 2012 (Japanese Patent Application  No. 2012-124854) and Japanese patent application filed on  Apr. 30, 2013 (Japanese Patent Application No. 2013-96041 ),  and the contents thereof are incorporated herein by reference.  1.  An actinic ray-sensitive or radiation-sensitive resin com› position comprising:  (P) a resin having a repeating unit (A) represented by the  following formula  (I)  capable of generating an acid on  the side chain of the resin upon irradiation with an  actinic ray or radiation:  INDUSTRIAL APPLICABILITY 