155  US 9,250,518 B2  156  -continued  Comparative Amine 3  Comparative Amine 4  Comparative Amine 5  Comparative acid-generating quencher 1  Comparative acid-generating quencher 2  Comparative acid-generating quencher 3  Water-repellent polymer 1:  Crosslinker 1  Crosslinker 1:  Mw~ 8,900  Mw/Mn~ 1.96  Water-repellent polymer 1  ArF Immersion Lithography Patterning Test 1  On a substrate (silicon wafer), a spin-on carbon film ODL- 50 (Shin-Etsu Chemical Co., Ltd.) having a carbon content of  80 wt % was deposited to a thickness of 200 nm and a  silicon-containing spin-on hard mask SHB-A940 having a  silicon content of 43 wt% was deposited thereon to a thick› ness of 35 nm. On this substrate for trilayer process, each of  the resist compositions in Tables 1 and 2 was spin coated, then  baked on a hot plate at 100°  C. for 60 seconds to form a resist  film of 80 nm thick.  Using anArF excimer laser immersion lithography scanner  NSR-S610C (Nikon Corp., NA 1.30,  a  0.98/0.78, 35°  cross› pole illumination, azimuthally polarized illumination), the  resist film was exposed through a 6% halftone phase shift  mask bearing a pattern having a space of70 nm and a pitch of  200 nm (on-wafer size) while varying the exposure dose and  focus. The resist film was baked (PEB) at the temperature  shown in Tables 1 and 2 for 60 seconds and then developed for  30 seconds with a 2.38 wt% TMAH aqueous solution, yield› ing a trench pattern having a space of 60 nm and a pitch of200  nm.  Pattern size was measured by SEM CG-4000. As exposure  was done in a varying dose, a sensitivity was determined as  the exposure dose which produced a trench size of 60 nm. As  exposure was done at a varying focus, a focus margin was  determined as a depth of focus (DOF) where the trench size  fell in the range of 55 to 65 nm.  The results are shown in Tables 1 and 2.  /\  0  N~  \_J  \_a  Q  0-s+  0  -......,_O~N)lN,/""-,....0/  H  /o......____,,,,,NYN......____,,,,,o-......,_  0  -continued  Comparative Amine 2  Comparative Amine 6 