US 2019/0243238 Al  1  Aug. 8, 2019  BACKGROUND  Solution to Problem  CITATION LIST  Patent Literature  SUMMARY OF INVENTION  Technical Problem  [0006]  [Patent Literature] JP H9-90637 A  [0007]  In the conventional chemically amplified resist  composition, it was difficult to simultaneously satisfy the  characteristics of the sensitivity to KrF excimer laser, ArF  excimer laser, electron beam and extreme ultraviolet (EUV),  resolution, depth of focus, and pattern characteristics.  [0008]  In particular, in conventional chemically amplified  resist composition for electron beam or EUV and the like,  absorbance of electron beam or EUV was little, and thus it  was difficult to simultaneously satisfy the characteristics of  the sensitivity to electron beam or EUV, resolution, depth of  focus, and pattern characteristics.  [0009]  Some of the embodiments of the present invention  have an object to provide a photosensitive compound used  for resist composition having superior characteristics such as  large absorbing efficiency for light of short wavelength such  as KrF, especially such as EUV or electron beam; sensitivity;  resolution; and pattern performance.  [0010]  Further, some of the embodiments of the present  invention have an object to provide a photosensitive com› pound, a photoacid generator and to a resist composition  containing the photosensitive compound, and to a method  for manufacturing a device using the resist composition.  [0011]  The inventors have conducted extensive studies to  solve the afore-mentioned problems. The inventors have  found that by allowing a compound having a particular  metal to be contained in the resist composition as the  photosensitive compound, characteristics such as large  absorbing efficiency for light of short wavelength such as  KrF, especially such as EUV or electron beam; sensitivity;  resolution; and pattern performance can be improved,  thereby leading to completion of some of the embodiments  of the present invention.  [0012]  That is, one of the embodiments of the present  invention is a photosensitive compound including a divalent  Te atom. More particularly, one of the embodiments of the  present invention is a photosensitive compound having  either one of a skeleton selected from an onium salt skeleton,  a diazomethane skeleton, an imide skeleton and an oxime  skeleton, wherein the skeleton comprises at least one Te  atom containing group represented by the following formula  (1  ).  [Chemical Formula 1]  *-Te-R 1  [0013]  Here, in the formula  (1),  each ofR$^{1 }$independently  represents either one of a substituent group selected from the  group consisting of a linear, branched, or a cyclic hydrocar› bon group having  1  to 20 carbon atoms; and an aryl group  having 5 to 20 carbon atoms. A part of or all of the hydrogen  atoms of the hydrocarbon group and the aryl group can be  substituted by a substituent group. When the hydrocarbon  group includes a methylene group, a divalent hetero atom  [0005]  On the other hand, in the conventional EUV lithog› raphy apparatus, power necessary to emit laser from the light  source was not enough, and thus there was a limitation in  enlarging the dose to efficiently generate acid from the  photoacid generator in the resist composition during expo› sure. Accordingly, improvement in acid generation effi› ciency of the photoacid generator in the resist composition  is required.  [0004]  As the light source for the exposure shift towards  shorter wavelength, higher sensitivity to the light source for  the exposure is required with the resist composition, and  improvement in the lithography characteristics to have reso› lution which enables reproduction of fine dimension pattern  is required. As a resist composition which satisfies such  requirement, a chemically amplified resist composition  using a photoacid generator is known (Patent Literature  1  ).  [0003]  As the device becomes more highly integrated,  demand for refining the lithography technology has become  higher, and thus there is a tendency to use KrF excimer laser  (wavelength of 248 nm), ArF excimer laser (wavelength of  193 nm), light of extremely short wavelength such as  extreme ultraviolet (EUV, wavelength of 13.5 nm), and  particle beam such as electron beam (EB) for exposure.  Lithography technology using such light of short wave› length, especially the lithography technology using extreme  ultraviolet (EUV) or electron beam can perform manufac› ture with single patterning. Accordingly, demand for resist  composition showing high responsiveness to extreme ultra› violet (EUV) or to electron beam and the like is likely to  increase in the future.  [0002]  In recent years, manufacture of display device such  as liquid crystal display (LCD) and organic EL display  (OLED) and formation of semiconductor device are per› formed actively by taking the advantage of photo lithography  technique utilizing photoresist. Regarding packages and the  like of such electronic parts and electronic products, light of  i-line having a wavelength of 365 nm, and lights having a  longer wavelength such ash-line (405 nm) and g-line (436  nm) are widely used as an active energy ray.  [0001]  Some of the embodiments of the present invention  relate to a photosensitive compound. More particularly,  some of the embodiments of the present invention relate to  a photosensitive compound including a divalent Te atom  which is suitably used for a resist composition for lithog› raphy, using as an exposure source a light of short wave› length such as KrF and the like, especially electron beam or  extreme ultraviolet. Further, some of the embodiments of the  present invention relate to a photoacid generator and to a  resist composition containing the photosensitive compound,  and to a method for manufacturing a device using the resist  composition.  TECHNICAL FIELD  PHOTOSENSITIVE COMPOUND,  PHOTOACID GENERATOR AND RESIST  COMPOSITION CONTAINING THE  PHOTOSENSITIVE COMPOUND, AND  METHOD FOR MANUFACTURING DEVICE  USING THE RESIST COMPOSITION 