11. A method of automatic and systematic design of a disordered semiconductor device, the method comprising: (a) receiving a partial input specification of composition and geometry of the disordered semiconductor device; (b) defining a simulation space of device parameters and corresponding pa rameter ranges of the disordered semiconductor device; (c) automatically performing the method of claim 1 for two or more different cases, wherein the input specihcation is determined for each case by se lecting values for each of the device parameters within the corresponding parameter ranges; and (d) providing an optimized device configuration as an output.