US 20180335696Al  c19)  United States  c12)  Patent Application Publication  Hatakeyama et al.  c10)  Pub. No.: US 2018/0335696 Al  (43)  Pub. Date:  Nov. 22, 2018  (54)  RESIST COMPOSITION AND PATTERNING  PROCESS  (71)  Applicant:  Shin-Etsu Chemical Co., Ltd.,  Tokyo  (JP)  (72)  Inventors:  Jun Hatakeyama,  Joetsu-shi (JP);  Masaki Ohashi,  Joetsu-shi (JP)  (73)  Assignee:  Shin-Etsu Chemical Co., Ltd.,  Tokyo  (JP)  (21)  Appl. No.:  15/978,681  (22)  Filed:  May 14, 2018  (30)  (51)  Int. Cl.  (52)  U.S. Cl.  CPC ..........  G03F  710397  (2013.01);  C0SF  220116  (2013.01);  C0SF  220130  (2013.01);  G03F  710045  (2013.01);  G03F  7116  (2013.01);  C08F  2220/301  (2013.01);  G03F  712037  (2013.01);  G03F  712004  (2013.01);  G03F  7132  (2013.01);  C08F 2800/10  (2013.01);  G03F  712006  (2013.01)  C0SF  220130  G03F  71004  G03F  7116  G03F  7120  G03F  7132  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  G03F  71039  C0SF 220116  (2006.01)  (2006.01)  A resist composition contains a polymer-bound acid gen› erator, specifically a polymer comprising recurring units  derived from a sulfonium or iodonium salt having a polym› erizable unsaturated bond and containing iodine in the linker  between the polymerizable unsaturated bond and a fluoro› sulfonic acid. The resist composition offers a high sensitivity  and improved CDU independent of whether it is of positive  or negative tone.  May 22, 2017  (JP) ................................. 2017-100594  (57)  ABSTRACT  Foreign Application Priority Data  Publication Classification 