US 10,698,314 B2  125  126  13.  A chemically amplified negative resist composition  comprising  A 1  is hydrogen or trifluoromethyl, and M- is a non› nucleophilic counter ion.  10.  The resist composition of claim  9  which is a chemi› cally amplified positive resist composition.  11.  The resist composition of claim  9  wherein the qua› ternary ammonium salt has the formula (1) or (2):  a quencher containing a quaternary ammonium salt  selected from the group consisting of a quaternary  ammonium iodide, quaternary ammonium dibromoio› dide, quaternary ammonium bromodiiodide, and qua› ternary ammonium triiodide,  wherein the base polymer is an acid labile group free  polymer.  an acid generator, and  a base polymer,  14.  The resist composition of claim  13  wherein the  quaternary ammonium salt has the formula (1) or (2):  wherein R$^{1 }$to R 4  and Rs to R$^{10 }$are each independently a  C$_{1 }$-C$_{24 }$straight, branched or cyclic alkyl group, C$_{2}$ -C$_{24}$ straight, branched or cyclic alkenyl group, C$_{2}$ -C$_{24 }$ straight, branched or cyclic alkynyl group, or C -C  1  1  4  s  10  6  24  ary group, R  to R  and R  to  R  may contain a  halogen, hydroxyl, carboxyl, ether, ester, thiol, thio› ester, thionoester, dithioester, amino, nitro, sulfone or  ferrocenyl moiety, a pair ofR 1  and  R 2  R $^{1 }$and  R 4  R 2  3  3  ’  ’  and R , and/or R and R $^{4 }$may bond together to form a  ring, or a pair of R 1  and  R 2 ,  R $^{1 }$and  R 4  R 2  and R 3  or  3  4  ’  ’  R and R , taken together, may form a double bond, R  11  is a C$_{2}$ -C$_{12 }$straight, branched or cyclic alkylene group  which may contain an ether and/or ester moiety, x- is  an anion selected from the group consisting on-, Br  $_{2}$1-,  BrI$_{2}$ - and 1$_{3}$-.  12.  A pattern forming process comprising the steps of  coating the resist composition of claim  9  onto a substrate  baking, exposing the resulting resist film to high-energ;  radiation, and developing the resist film with a developer.  15.  A pattern forming process comprising the steps of  coating the resist composition of claim  13  onto a substrate,  baking, exposing the resulting resist film to high-energy  radiation, and developing the resist film with a developer.  *  *  *  *  *  (1)  (2)  (1)  (2)  Z$^{32}$-Z 31 -,  Z $^{31 }$is a C$_{1}$-C$_{6 }$ straight, branched or cyclic  alkylene group which may contain a carbonyl, ester,  ether or hydroxyl moiety, or Z 31  is a C$_{2}$ -C$_{6 }$ straight,  branched or cyclic alkenylene group which may con› tain a carbonyl, ester, ether or hydroxyl moiety, or Z 31  is a phenylene, fluorinated phenylene or trifluorom› ethyl-substituted phenylene group, Z 32  is -0- or  -NH-,  wherein R$^{1 }$to R 4  and Rs to R$^{10 }$are each independently a  C$_{1 }$-C$_{24 }$straight, branched or cyclic alkyl group, C$_{2}$ -C$_{24 }$ straight, branched or cyclic alkenyl group, C$_{2}$ -C$_{24 }$ straight, branched or cyclic alkynyl group, or C -C  1  1  4  s  6  24  ary group, R  to R  and R  to  R  10  may contain a  halogen, hydroxyl, carboxyl, ether, ester, thiol, thio› ester, thionoester, dithioester, amino, nitro, sulfone or  ferrocenyl moiety, a pair ofR 1  and  R 2  R $^{1 }$and  R 4  R 2  3  3  4  ’  ’  and R , and/or R and R may bond together to form a  ring, or a pair ofR 1  and  R 2 ,  R $^{1 }$and  R 4  R 2  and R 3  or  3  4  ’  ’  R and R , taken together, may form a double bond, R  11  is a C$_{2}$-C$_{12 }$straight, branched or cyclic alkylene group  which may contain an ether and/or ester moiety,  x- is  an anion selected from the group consisting on-, Br  $_{2}$1-,  BrI$_{2}$ - and 1$_{3}$-. 