US 20190196326Al  c19)  United States  c12)  Patent Application Publication  KOJIMA et al.  c10) Pub. No.: US 2019/0196326 Al  (43) Pub. Date:  Jun.  27, 2019  (54)  ACTINIC RAY-SENSITIVE OR  RADIATION-SENSITIVE RESIN  COMPOSITION, RESIST FILM, PATTERN  FORMING METHOD, AND METHOD OF  MANUFACTURING ELECTRONIC DEVICE  (71)  Applicant:  FUJIFILM Corporation,  Tokyo (JP)  (72)  Inventors:  Masafumi KOJIMA,  Shizuoka (JP);  Daisuke ASAKAWA,  Shizuoka (JP);  Akiyoshi GOTO,  Shizuoka (JP);  Keita  KATO,  Shizuoka (JP);  Keiyu OU,  Shizuoka (JP)  (73)  Assignee:  FUJIFILM Corporation,  Tokyo (JP)  (21)  Appl. No.:  16/286,984  (22)  Filed:  Feb. 27, 2019  (63)  Continuation  of application  No.  PCT/JP2017/  021494, filed on Jun. 9, 2017.  (51)  Int. Cl.  (52)  U.S. Cl.  CPC ..........  G03F 710045  (2013.01);  G03F 712004  (2013.01);  C07C 309/17  (2013.01);  C07C  309/16  (2013.01);  C07C 309/19  (2013.01);  G03F 710046  (2013.01);  C07C 2603/74  (2017.05);  C07C 317106  (2013.01);  C07C  317112  (2013.01);  C07D 295/185  (2013.01);  G03F 7132  (2013.01);  C07C 2601/14  (2017.05);  C07C 309107  (2013.01)  C07C 309/16  C07C 309/19  C07C 309107  C07C 317106  C07C 317112  C07D 295/185  G03F  7132  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  G03F  71004  G03F  7120  C07C 309/17  (2006.01)  (2006.01)  (2006.01)  Aug. 31, 2016  Jan. 23, 2017  (JP) ................................. 2016-170028  (JP) ................................. 2017-009460  (30)  Foreign Application Priority Data  Related U.S. Application Data  Publication Classification  (57)  ABSTRACT  An actinic ray-sensitive or radiation-sensitive resin compo› sition contains a compound that generates an acid repre› sented by Formula  (I)  by irradiation with an actinic ray or  radiation, and a resin. The resist film is formed of the actinic  ray-sensitive or radiation-sensitive resin composition. In the  pattern forming method and the method of manufacturing an  electronic device, the actinic ray-sensitive or radiation› sensitive resin composition is used.  Rf  H03S+X-t;,-R 1  R2  (I) 