US010520813B2  (IO)  Patent No.:  US 10,520,813 B2  Dec. 31, 2019  (45)  Date of Patent:  Lai et al.  c12)  United States Patent  (54)  EXTREME ULTRAVIOLET PHOTORESIST  WITH HIGH-EFFICIENCY ELECTRON  TRANSFER  (Continued)  (Continued)  (Continued)  (Continued)  (Continued)  Resist Material  200  19 Claims, 7 Drawing Sheets  (57)  ABSTRACT  Related U.S. Application Data  (65)  Prior Publication Data  OTHER PUBLICATIONS  FOREIGN PATENT DOCUMENTS  (56)  References Cited  U.S. PATENT DOCUMENTS  (71)  Applicant:  Taiwan Semiconductor  Manufacturing Co., Ltd.,  Hsinchu  (TW)  (72)  Inventors:  Wei-Han Lai,  New Taipei (TW);  Chin-Hsiang Lin,  Hsin-chu (TW);  Chien-Wei Wang,  Zhubei (TW)  (73)  Assignee:  TAIWAN SEMICONDUCTOR  MANUFACTURING CO., LTD,  Hsinchu (TW)  ( * )  Notice:  Subject to any disclaimer, the term ofthis  patent is extended or adjusted under 35  U.S.C. 154(b) by  O  days.  (58)  Field of Classification Search  CPC .... G03F 7/0033; G03F 7/0002; G03F 7/0041;  G03F 7/0048; G03F 7/075; G03F 7/09;  (21)  Appl. No.:  15/614,032  (22)  Filed:  Jun. 5, 2017  (60)  Provisional application No. 62/434,961, filed on Dec.  15, 2016.  (51)  Int. Cl.  (52)  U.S. Cl.  CPC .........  G03F  710397  (2013.01);  C07D  247102  (2013.01);  C07D 273/00  (2013.01);  G03F  7/0042  (2013.01)  US 2018/0173101 Al  Jun. 21, 2018  A method includes forming a photoresist layer over a  substrate, wherein the photoresist layer includes a polymer,  a sensitizer, and a photo-acid generator (PAG), wherein the  sensitizer includes a resonance ring that includes nitrogen  and at least one double bond. The method further includes  performing an exposing process to the photoresist layer. The  method further includes developing the photoresist layer,  thereby forming a patterned photoresist layer.  Machine translation of JP 2006-091421 (2006).*  G03F  71004  G03F  71039  (2006.01)  (2006.01)  Primary Examiner  - Martin  J  Angebranndt  (74)  Attorney, Agent, or Firm  - Haynes and Boone, LLP  JP  JP  08-320554  * 12/1996  09-138500  *  5/1997  G03F 7/022  G03F 7/038  3,661,582 A *  5/1972 Broyde ................. G03F 7/0226  430/191  4,904,564 A *  2/1990 Chiong ................... G03F 7/022  430/156 