Directed self-organization of graphene nanoribbons on SiC M. Sprinkle, 1 M. Ruan, 1 X. Wu, 1 Y. Hu, 1 M. Rubio-Roy, 1 J. Hankinson, 1 N.K. Madiomanana, 1 C. Berger, 1, 2 and W.A. de Heer 1 $^{1}$Georgia Institute of Technology, Atlanta, Georgia 30332-0430, USA $^{2}$CNRS/Institut N´ eel, BP166, 38042 Grenoble, France Realization of post-CMOS graphene electronics requires production of semiconducting graphene, which has been a labor-intensive process. 1–5 We present tailoring of silicon carbide crystals via con- ventional photolithography and microelectronics processing to enable templated graphene growth on 4 H -SiC { 1 ¯ 10 n } ( n ≈ 8) crystal facets rather than the customary { 0001 } planes. This allows self-organized growth of graphene nanoribbons with dimensions defined by those of the facet. Preferential growth is confirmed by Raman spectroscopy and high-resolution transmission elec- tron microscopy (HRTEM) measurements, and electrical characterization of prototypic graphene devices is presented. Fabrication of > 10,000 top-gated graphene transistors on a 0.24 cm 2 SiC chip demonstrates scalability of this process and represents the highest density of graphene devices reported to date. Abstract 1 arXiv:1002.0775v1 [cond-mat.mtrl-sci] 3 Feb 2010