US 10,698,314 B2  120  119  TABLE 2-continued  Acid  PEB  Polymer  generator  Quencher  Organic solvent  temp. Sensitivity LWR  Resolution  (pbw)  (pbw)  (pbw)  (pbw)  (" C.)  (µC/cm 2 )  (nm)  (nm)  1-3  Polymer 1  Comparative  PGMEA (400)  80  56  4.3  80  (100)  Quencher 3  CyH (2,000)  (3.63)  PGME (100)  1-4  Polymer 1  Comparative  PGMEA (400)  80  57  4.6  80  (100)  Quencher 4  CyH (2,000)  (3.23)  PGME (100)  1-5  Polymer 1  Comparative  PGMEA (400)  80  61  5.5  80  (100)  Quencher 5  CyH (2,000)  (3.20)  PGME (100)  1-6  Polymer 2 PAG 2  Comparative  PGMEA (2,000)  90  44  7.6  85  (100)  (10)  Quencher 1  CyH (500)  (2.50)  1-7  Polymer 3 PAG 1  Comparative  PGMEA (2,000)  100  60  8.4  90  (100)  (10)  Quencher 1  CyH (500)  (2.50)  Examples 2-1 to 2-12 and Comparative Example  2-1  EUV Lithography Test  The resist composition in Table 3 was spin coated on a  silicon substrate having a 20 nm coating of silicon-contain› ing spin-on hard mask SHB-A940 (Shin-Etsu Chemical Co.,  Ltd., silicon content 43 wt % ) and pre baked on a hotplate at  105°  C. for 60 seconds to form a resist film of 60 nm thick.  Using an EUV scanner NXE3300 (ASML, NA 0.33,  a0.9/  0.6, quadrupole illumination), the resist film was exposed to  EUV through a mask bearing a hole pattern at a pitch 46 nm  (on-wafer size) and +20% bias. The resist film to was baked  (PEB) on a hotplate at the temperature shown in Table 3 for  60 seconds and developed in a 2.38 wt % TMAH aqueous  solution for 30 seconds to form a hole pattern having a size  of 23 nm.  The resist pattern was evaluated using CD-SEM (CG- 5000, Hitachi High-Technologies Corp.). The exposure dose  that provides a hole pattern having a size of 23 nm is  reported as sensitivity. The size of 50 holes was measured,  from which a size variation  (3a)  was computed and reported  as CDU.  The resist composition is shown in Table 3 together with  the sensitivity and CDU  of  EUV lithography.  TABLE 3  Example  2-1  2-2  2-3  2-4  2-5  2-6  2-7  2-8  2-9  2-10  2-11  Acid  PEB  Polymer  generator  Quencher  Organic solvent  temp. Sensitivity CDU  (pbw)  (pbw)  (pbw)  (pbw)  (" C.)  (mJ/cm 2 )  (nm)  Polymer 1  Quencher 1  PGMEA (400)  80  24  3.3  (100)  (3.70)  CyH (2,000)  PGME (100)  Polymer 1  Quencher 2  PGMEA (400)  80  25  3.0  (100)  (5.29)  CyH (2,000)  PGME (100)  Polymer 1  Quencher 3  PGMEA (400)  80  25  2.9  (100)  (5.76)  CyH (2,000)  PGME (100)  Polymer 1  Quencher 4  PGMEA (400)  80  21  3.1  (100)  (6.23)  CyH (2,000)  PGME (100)  Polymer 1  Quencher 5  PGMEA (400)  80  24  2.6  (100)  (3.60)  CyH (2,000)  PGME (100)  Polymer 1  Quencher 6  PGMEA (400)  80  28  2.6  (100)  (2.82)  CyH (2,000)  PGME (100)  Polymer 1  Quencher 7  PGMEA (400)  80  25  2.8  (100)  (2.89)  CyH (2,000)  PGME (100)  Polymer 1  Quencher 8  PGMEA (400)  80  28  2.8  (100)  (3.51)  CyH (2,000)  PGME (100)  Polymer 1  Quencher 9  PGMEA (400)  80  26  2.9  (100)  (3.19)  CyH (2,000)  PGME (100)  Polymer 1  Quencher 10 PGMEA (400)  80  26  2.9  (100)  (5.25)  CyH (2,000)  PGME (100)  Polymer 1  Quencher 11  PGMEA (400)  80  26  2.9  (100)  (3.01)  CyH (2,000)  PGME (100) 