(12)  United States Patent  Schiltz  (10)  Patent No.:  US 6,653,054 B2  Nov. 25, 2003  (45)  Date of Patent:  US006653054  B2  (54)  RESIN, A DOUBLE RESIN LAYER FOR  EXTREME ULTRAVIOLET LIGHT (EUV)  PHOTOLITHOGRAPHY, AND AN EXTREME  ULTRAVIOLET LIGHT (EUV)  PHOTOLITHOGRAPHY PROCESS  (75)  Inventor:  Andre Schiltz,  Saint Ismier (FR)  (73)  Assignee:  France Telecom,  Paris (FR)  ( *)  Notice:  Subject to any disclaimer, the term of this  patent is extended or adjusted under 35  U.S.C. 154(b) by  O  days.  (21)  Appl. No.:  09/912,057  (22)  Filed:  Jul. 25, 2001  (65)  Prior Publication Data  US 2002/0072014 Al Jun. 13, 2002  (30)  Foreign Application Priority Data  Jul. 26, 2000  (FR) ............................................ 00 09759  (51)  Int. Cl.7  .............................  G03F 7/00;  G03F 7/16;  C08J 7/18  (52)  U.S. Cl.  .............................  430/312;  430/9; 430/14;  430/15; 430/311; 430/313; 430/322; 430/323;  430/394; 427 /489  (58)  Field of Search  ................................. 430/311, 312,  430/313, 322, 323, 9, 14, 15, 397, 966;  427/489  (56)  References Cited  U.S. PATENT DOCUMENTS  4,394,437 A  *  7/1983 Bergendahl et al. ........ 430/312  5,487,967 A  *  1/1996 Hutton et al. ............... 430/322  6,007,963 A  *  12/1999 Felter et al. ............. 430/271.1  6,150,256 A  *  11/2000 Furukawa et al. .......... 438/618  6,451,512  Bl  *  9/2002 Rangarajan et al. ........ 430/313  2001/0004510 Al  *  6/2001 Wheeler .................. 430/270.1  2002/0072014 Al  *  6/2002 Schiltz ....................... 430/312  EP  113 034  *  7/1984  EP  0 197 519 A2  10/1986  EP  0940 719 A2  *  9/1999  JP  1-302350  *  12/1989  JP  4-206966  *  7/1992  JP  8-306604  *  11/1996  ............. G03F/7/10  ............. G03F/7/02  ........... G03F/7/095  ............  G03C/5/00  ........... H0lL/27/14  . ... ... .. H0lL/21/027  FOREIGN PATENT DOCUMENTS  (57)  ABSTRACT  *  cited by examiner  Primary Examiner-Mark  F.  Huff  Assistant Examiner-Nicole  Barreca  (74)  Attorney, Agent, or  Firm-Meyertons, Hood, Kivlin,  Kowert & Goetzel, P.C.; Eric B. Meyertons  A semiconductor substrate etching masking layer onto  which the pattern to be etched can be transferred by photo› lithography at extreme ultraviolet light wavelengths from 10  to 100 nm and which is resistant to plasma etching. An  ultraviolet light semiconductor integrated circuit photoli› thography process and the use for fabricating a double  masking layer for semiconductor substrate etching of a  photo-ablation layer sensitive to extreme ultraviolet light  and resistant to deep ultraviolet light and/or ultraviolet light  coupled to a polymer resin layer resistant to extreme ultra› violet light and to plasma etching when the resin has been  developed and sensitive to deep ultraviolet light and/or to  ultraviolet light.  16 Claims, 2 Drawing Sheets  7 5  6  7 5  6  7 5  7 5  7 5  7 5  ,=..,,..__-2  ~~~~~~~*~*~~~  ,-r.,,-..__  1 