Mar. 26, 2015  135  US 2015/0086912 Al  -continued  ethyldisilazane treatment, and then subjected to heat-drying  on a hot plate at 120°  C. for 90 sec to thereby obtain an actinic  ray-sensitive or radiation-sensitive film (a resist film) having  a thickness of 50 nm. The actinic ray-sensitive or radiation› sensitive film was irradiated with an electron beam by using  an electron beam irradiating apparatus (HL 7 50, manufac› tured by Hitachi, Ltd., accelerating voltage: 50 keV). Imme› diately after irradiation, the film was heated at 110°  C. for 90  sec on a hot plate. Further, the film was developed with a  tetramethylammonium hydroxide aqueous solution having  concentration of 2.38% by mass at 23°  C. for 60 sec, rinsed  with pure water for 30 sec, and spin dried to obtain a resist  pattern.  [0545]  The prepared actinic ray-sensitive or radiation-sen› sitive resin composition was uniformly coated by a spin  coater on a silicon substrate having been subjected to hexam› ethyldisilazane treatment, and then subjected to heat-drying  on a hot plate at 120°  C. for 90 sec to form an actinic ray› sensitive or radiation-sensitive film (a resist film) having a  thickness of 50 nm. The actinic ray-sensitive or radiation› sensitive film was subjected to exposure by an EUV exposure  apparatus (Micro Exposure Tool, NA 0.3, Quadrupole, outer  sigma 0.68, inner sigma 0.36, manufactured by Exitech)  through a reflection type mask of a 1/1 line and space pattern  of a line width of 50 nm. Immediately after exposure, the film  was heated at 110°  C. for 90 sec on a hot plate. Further, the  film was developed with a tetramethylammonium hydroxide  aqueous solution having concentration of 2.38% by mass at  23 °  C. for 60 sec, rinsed with pure water for 30 sec, and spin  dried to obtain a resist pattern.  [0546]  The prepared actinic ray-sensitive or radiation-sen› sitive resin composition was uniformly coated by a spin  coater on a silicon substrate having been subjected to hexam› ethyldisilazane treatment, and then subjected to heat-drying  on a hot plate at 120°  C. for 90 sec to form an actinic ray› sensitive or radiation-sensitive film (a resist film) having a  thickness of 50 nm. The actinic ray-sensitive or radiation› sensitive film was irradiated with an electron beam by using  an electron beam irradiating apparatus (HL 7 50, manufac› tured by Hitachi, Ltd., accelerating voltage: 50 keV). Imme› diately after irradiation, the film was heated at 110°  C. for 90  sec on a hot plate. Further, the film was developed with the  developer shown in Table 4 at 23°  C. for 60 sec, rinsed with  the rising solution shown in Table 4 (rinsing is not performed  in the case of description of"None") for 30 sec, and spin dried  to obtain a resist pattern.  [0547]  The prepared actinic ray-sensitive or radiation-sen› sitive resin composition was uniformly coated by a spin  [0544]  The prepared actinic ray-sensitive or radiation-sen› sitive resin composition was uniformly coated by a spin  coater on a silicon substrate having been subjected to hexam- [0542]  An actinic ray-sensitive or radiation-sensitive resin  composition (a resist composition) was prepared by dissolv› ing each component shown in the following Tables 2 to 5 in a  solvent to prepare each solution having solid content concen› tration of 4.0% by mass, and the prepared solution was fil› tered through a polytetrafluoroethylene filter having a pore  size of0.10 µm.  The actinic ray-sensitive or radiation-sensi› tive resin composition was evaluated by the following  method, and the results obtained were shown in Tables 2 to 5.  [0543]  As for each component, the ratio in the case of using  a plurality of components was shown in a mass ratio.  [0540]  G-1: Butyl acetate  G-2: 2-Heptanone  G-3: Anisole  [0541]  G-4: 4-Methyl-2-pentanol  G-5: 1-Hexanol  G-6: Decane  <Evaluation of Resist>  Exposure Condition 1: EB (Electron Beam)  Exposure/ Alkali Development  Examples 1 to 17 and 29 to 47, and Comparative  Examples 1 to 5  Exposure Condition 4: EUV (Extreme Ultraviolet  Ray) Exposure/Organic Solvent Development  Examples  77  to 90, and Comparative Examples 14 to  18  Exposure Condition 3: EB (Electron Beam)  Exposure/Organic Solvent Development  Examples 61 to 76, and Comparative Examples 9 to  13  [Developer, Rinsing Solution]  Mw ... 9000  Mw/Mn ... 1.77  Mw ... 30000  Mw/Mn ... 1.68  Exposure Condition 2: EUV (Extreme Ultraviolet  Ray) Exposure/Alkali Development  Examples 18 to 28 and 48 to 60, and Comparative  Examples 6 to 8  HHR-3  HHR-4 