US 10,620,533 B2  115  116  content of 80 wt % was deposited to a thickness of 200 nm  and a silicon-containing spin-on hard mask SHB-A940  having a silicon content of 43 wt % was deposited thereon  to a thickness of 35 nm. On this substrate for trilayer  process, each of the resist compositions in Table 1 was spin  coated, then baked on a hot plate at 100°  C. for 60 seconds  to form a resist film of 80 nm thick.  Using anArF excimer laser immersion lithography scan- ner NSR-S610C (Nikon Corp., NA 1.30,  a  0.98/0.78, 35°  cross-pole illumination, azimuthally polarized illumination),  the resist film was exposed through a 6% halftone phase shift  mask bearing a pattern having a line of 60 nm and a pitch of  200 nm (on-wafer size). The resist film was baked (PEB) at  the temperature shown in Table 1 for 60 seconds and  immediately developed in n-butyl acetate for 30 seconds,  yielding a negative trench pattern having a space of 60 nm  and a pitch of 200 nm.  In another run, the same procedure as above was followed  until the exposure and PEB steps. The resist film was stored  in a FOUP at 23°  C. for 24 hours before it was developed in  n-butyl acetate for 30 seconds, yielding a negative trench  pattern at a pitch of 200 nm.  Trench pattern size was measured under a scanning elec› tron microscope (SEM) CG-4000 (Hitachi High-Technolo› gies Corp.). The difference between the size of the trench  pattern printed by the continuous procedure from coating to  development and the size of the trench pattern printed  through 24-hour storage (or delay) after PEB is reported as  PPD size.  The results are shown in Table 1.  On a substrate (silicon wafer), a spin-on carbon film  ODL-102 (Shin-Etsu Chemical Co., Ltd.) having a carbon  ArF Immersion Lithography Patterning Test  Examples 1-1 to 1-13 and Comparative Examples  1-1 to 1-4  Water-repellent polymer 1  MW~S,900  Mw/Mn~ 1.96  Water-Repellent Polymer:  -continued  Comparative Quencher 2  TABLE 1  Acid  Polymer  generator  (pbw)  (pbw)  Example  1-1  Polymer 1 PAGl  (100)  (8.0)  1-2  Polymer 1 PAGl  (100)  (8.0)  1-3  Polymer 1 PAGl  (100)  (8.0)  1-4  Polymer 1 PAGl  (100)  (8.0)  1-5  Polymer 1 PAGl  (100)  (8.0)  1-6  Polymer 1 PAGl  (100)  (8.0)  1-7  Polymer 1 PAGl  (100)  (8.0)  1-8  Polymer 1 PAGl  (100)  (8.0)  1-9  Polymer 1 PAGl  (100)  (8.0)  Water-repellent  Organic  PEB  PPD  Quencher  polymer  solvent  temp. Sensitivity  size  (pbw)  (pbw)  (pbw)  (" C.)  (mJ/cm 2 )  (nm)  Quencher 1  Water-repellent  PGMEA(2,200)  95  33  0.1  (4.50)  polymer 1  GBL(300)  (4.0)  Quencher 2  Water-repellent  PGMEA(2,200)  95  38  0.2  (4.50)  polymer 1  GBL(300)  (4.0)  Quencher 3  Water-repellent  PGMEA(2,200)  95  39  0.2  (4.50)  polymer 1  GBL(300)  (4.0)  Quencher 4  Water-repellent  PGMEA(2,200)  95  40  0.4  (4.50)  polymer 1  GBL(300)  (4.0)  Quencher 5  Water-repellent  PGMEA(2,200)  95  39  0.3  (4.50)  polymer 1  GBL(300)  (4.0)  Quencher 6  Water-repellent  PGMEA(2,200)  95  39  0.2  (4.50)  polymer 1  GBL(300)  (4.0)  Quencher 7  Water-repellent  PGMEA(2,200)  95  36  0.2  (4.50)  polymer 1  GBL(300)  (4.0)  Quencher 8  Water-repellent  PGMEA(2,200)  95  38  0.4  (4.50)  polymer 1  GBL(300)  (4.0)  Quencher 9  Water-repellent  PGMEA(2,200)  95  36  0.2  (4.50)  polymer 1  GBL(300)  (4.0) 