I 1111111111111111 1111111111 11111 111111111111111 IIIII IIIII IIIIII IIII IIII IIII  USO 10054853B2  (IO)  Patent No.:  US 10,054,853 B2  (45)  Date of Patent:  *  Aug. 21, 2018  c12)  United States Patent  Fujiwara  (54)  MONOMER, POLYMER, RESIST  COMPOSITION, AND PATTERNING  PROCESS  (71)  Applicant:  Shin-Etsu Chemical Co., Ltd.,  Tokyo  (JP)  (72)  Inventor:  Takayuki Fujiwara,  Joetsu (JP)  (73)  Assignee:  SHIN-ETSU CHEMICAL CO., LTD.,  Tokyo (JP)  ( * )  Notice:  Subject to any disclaimer, the term ofthis  patent is extended or adjusted under 35  U.S.C. 154(b) by  O  days.  (21)  Appl. No.:  15/483,210  (22)  Filed:  Apr. 10, 2017  (65)  Prior Publication Data  (30)  Foreign Application Priority Data  (51)  Int. Cl.  (52)  U.S. Cl.  CPC ..........  G03F 710392  (2013.01);  C07C 307102  (2013.01);  C07C 311149  (2013.01);  ( 58)  Field of Classification Search  CPC ...... G03F 7/004; G03F 7/0045; G03F 7/0046;  G03F 7/0382; G03F 7/0392; G03F 7/11;  G03F  71004  G03F  71039  (2006.01)  (2006.01)  (Continued)  (Continued)  (Continued)  Apr. 14, 2016  (JP) ................................. 2016-080899  US 2017/0299963 Al  Oct. 19, 2017  This patent is subject to a terminal dis› claimer.  A monomer having an onium salt structure represented by  formula (1) gives a polymer which is fully compatible with  resist components. A resist composition comprising the  polymer has advantages including reduced acid diffusion,  high sensitivity, high resolution, a good balance of lithog› raphy properties, and less defects, and is quite effective for  precise micropatterning.  (57)  ABSTRACT  (Continued)  (Continued)  Primary Examiner  - Amanda C Walke  (74)  Attorney, Agent, or Firm  - Westerman, Hattori,  Daniels & Adrian, LLP  Machine translation of JP 2014-167579 (no date).*  OTHER PUBLICATIONS  EP  EP  0 473 547 Al  3/1992  1 635 218 A2  3/2006  FOREIGN PATENT DOCUMENTS  7,511,169 B2  3/2009 Ohsawa et al.  7,875,746 B2  1/2011 Wada  (Continued)  U.S. PATENT DOCUMENTS  (56)  References Cited  21 Claims, 1 Drawing Sheet  EXPOSURE  t  ♦  +  t  +•"------ 50  ’-’-~-40  --~30  ~•20  o txt  Z-L $^{3}$-0-~-N--L1  ?  L $^{2}$-A1  0  Xb  m  (1) 