1111111111111111 IIIIII IIIII 1111111111 11111 111111111111111 IIIII IIIII IIIII 1111111111 11111111  US 20200379345Al  c19)  United States  c12)  Patent Application Publication  Fukushima et al.  c10)  Pub. No.: US 2020/0379345 Al  (43)  Pub. Date:  Dec. 3, 2020  (54)  MOLECULAR RESIST COMPOSITION AND  PATTERNING PROCESS  (71)  Applicant:  Shin-Etsu Chemical Co., Ltd.,  Tokyo  (JP)  (72)  Inventors:  Masahiro Fukushima,  Joetsu-shi (JP);  Masaki Ohashi,  Joetsu-shi (JP);  Kazuhiro Katayama,  Joetsu-shi (JP)  (73)  Assignee:  Shin-Etsu Chemical Co., Ltd.,  Tokyo  (JP)  (21)  Appl. No.:  16/858,092  (22)  Filed:  Apr. 24, 2020  (30)  Foreign Application Priority Data  May 27, 2019  (JP) ................................. 2019-098585  A molecular resist composition is provided comprising (A)  a betaine type onium compound having a sulfonium cation  moiety and a sulfonate anion moiety in a common molecule,  the sulfonium cation moiety having a phenyl group substi› tuted with an optionally heteroatom-containing monovalent  hydrocarbon group, the phenyl group being attached to the  sulfur atom, and (B) an organic solvent, the resist compo› sition being free of a base resin. When processed by lithog› raphy using KrF, ArF excimer laser, EB or EUV, the resist  composition is improved in dissolution contrast, EL, MEF,  and LWR.  (57)  ABSTRACT  Publication Classification  (51)  Int. Cl.  (52)  U.S. Cl.  CPC ................  G03F  71004  (2013.01);  G03F 7120  (2013.01)  G03F  71004  (2006.01) 