204  US 9,170,489 B2  203  23.  A manufacturing method of an electronic device, com› prising:  the pattern-forming method according to claim  14.  24.  An  electronic device, which is manufactured by the  manufacturing method of an electronic device according to  claim  23.  25.  The pattern-forming method according to claim  14,  further comprising, between steps (2) and (3 ), a step ofbaking  the exposed film.  step (3) of forming a negative pattern by development of  the film with a developer containing an organic solvent  after the exposing of the film,  wherein a content of the compound (B) is 31  % by mass to  60% by mass on the basis of all solids content of the  composition.  wherein the resin (A) further has a repeating unit having a  polar group.  15.  The pattern-forming method according to claim  14,  16.  The pattern-forming method according to claim  15,  wherein the polar group is selected from the group consist› ing of a hydroxyl group, a cyano group, a lactone group,  a carboxylic acid group, a sulfonic acid group, an amido  group, a sulfonamido group, an ammonium group, a  sulfonium group and a group obtained by combining  two or more of the above groups.  17.  The pattern-forming method according to claim  14,  18.  The pattern-forming method according to claim  17,  wherein the resin (A) further has a repeating unit having an  acid group.  wherein the acid group is a phenolic hydroxyl group, a  carboxylic acid group, a sulfonic acid group, a fluori› nated alcohol group, a sulfonamido group, a sulfo- ny limido group, an ( alky lsulfony I)( alky lcarbony I )meth› ylene group, an (alkylsulfonyl)(alkylcarbonyl)imido  group, a bis(alkylcarbonyl)methylene group, a bis(alky› lcarbonyl)imido group, a bis(alkylsulfonyl)methylene  group, a bis(alkylsulfonyl)imido group, a tris-(alkylcar› bonyl)methylene group or a tris(alkylsulfonyl)methyl› ene group.  wherein a content of a repeating unit represented by the  following formula (I) to all repeating units in the resin  (A) is 4 mo!  % or less:  wherein, in formula  (ZI)  each ofR$_{201}$, R$_{202 }$and R$_{203 }$inde› pendently represents an organic group, in formulae  (ZII)  and  (ZIII)  each ofR$_{204 }$to R$_{207 }$independently represents  an aryl group, an alkyl group or a cycloalkyl group,  z› represents a non-nucleophilic group, and two of R$_{201}$,  R$_{202 }$and R$_{203 }$are not bonded to form a cyclic structure.  step (1) of forming a film with an electron beam-sensitive  or extreme ultraviolet radiation-sensitive resin compo› sition that contains (A) a resin having an acid-decom› posable repeating unit and capable of decreasing a solu› bility of the resin (A) in a developer containing an  organic solvent by an action of an acid, (B) a compound  capable of generating an acid upon irradiation with an  electron beam or extreme ultraviolet radiation and (C) a  solvent;  step (2) of exposing the film with an electron beam or  extreme ultraviolet radiation; and  step (3) of forming a negative pattern by development of  the film with a developer containing an organic solvent  after the exposing of the film,  wherein a content of the compound (B) is 21 % by mass to  70% by mass on the basis of all solids content of the  composition, and  wherein resin (A) contains a repeating group represented  by formula (I):  X$_{4 }$ represents a single bond, --COO- or ----CONR$_{64}$-,  and R$_{64 }$represents a hydrogen atom or an alkyl group;  Ar$_{4 }$ represents an (n+l)-valent aromatic ring group, and  when Ar$_{4 }$ forms a ring together with R$_{42}$ , Ar $_{4 }$represents  an (n+2)-valent aromatic ring group; and  n represents an integer of 1 to 4.  L$_{4 }$ represents a single bond or an alkylene group;  27.  A pattern-forming method, comprising in this order:  20.  The pattern-forming method according to claim  14,  which is a method for forming a semiconductor fine circuit.  21.  An  electron beam-sensitive or extreme ultraviolet  radiation-sensitive resin composition, which is used for the  pattern-forming method according to claim  14.  22.  A resist film, which is formed with the electron beam- sensitive or extreme ultraviolet radiation-sensitive resin com› position according to claim  21.  19.  The pattern-forming method according to claim  14,  (ZI)  (ZII)  z- (ZIii)  26.  The pattern-forming method according to claim  14,  wherein the compound (B) is a compound selected from the  following formulae  (ZI)  to  (ZIII):  (I)  (I)  Ri1  Ri3  I  I  --fc-c+- 1  I  Ri2  Xi  I  L4  I  Ar4  I  (OH)n 