161  US 9,250,518 B2  162  TABLE3  EB Writing Test  Each of the resist compositions in Tables 4 and 5 was spin  coated onto a silicon substrate, which had been vapor primed  with hexamethyldisilazane (HMDS), and pre-baked on a hot  plate at 110°  C. for 60 seconds to form a resist film of 80 nm  thick. Using a system HL-800D (Hitachi Ltd.) at a HV volt› age of 50 ke  V,  the resist film was exposed imagewise to EB in  a vacuum chamber.  Immediately after the image writing, the resist film was  baked (PEB) on a hot plate at 90°  C. for 60 seconds and  developed in a 2.38 wt % TMAH aqueous solution for 30  seconds to form a pattern.  In the case of positive resist film, the resolution is a mini- mum trench size at the exposure dose that provides a resolu- tion as designed of a 120-nm trench pattern. In the case of  negative resist film, the resolution is a minimum isolated line  size at the exposure dose that provides a resolution as  designed  of  a 120-nm isolated line pattern.  It  is noted that  Examples 3-1 to 3-17 and Comparative Examples 3-1 to 3-3  are positive resist compositions, and Examples 3-18, 3-19 and  Comparative Example  3-4 are negative resist compositions.  The results are shown in Tables  4  and  5.  TABLE4  Acid  Water-repellent  Polymer  generator  Base  polymer  (pbw)  (pbw)  (pbw)  (pbw)  Example  2-1  Polymer 8  PAGl  Quencher 30  Water-repellent  (100)  (7.0)  (4.50)  polymer 1  (4.0)  2-2  Polymer 8  PAGl  Quencher 31  Water-repellent  (100)  (7.0)  (4.50)  polymer 1  (4.0)  2-3  Polymer 8  PAGl  Quencher 32  Water-repellent  (100)  (7.0)  (4.50)  polymer 1  (4.0)  2-4  Polymer 8  PAG2  Quencher 33  Water-repellent  (100)  (7.0)  (4.50)  polymer 1  (4.0)  2-5  Polymer 8  PAG2  Quencher 34  Water-repellent  (100)  (7.0)  (4.50)  polymer 1  (4.0)  Comparative  2-1  Polymer 8  PAGl  Comparative  Water-repellent  Example  (100)  (7.0)  Amine!  polymer 1  (2.27)  (4.0)  Organic  PEB  solvent  temp. Sensitivity DOF  (pbw)  (" C.)  (mJ/cm 2 )  (nm)  PGMEA (2,000)  90  45  155  CyH (500)  PGMEA (2,000)  90  42  155  CyH (500)  PGMEA (2,000)  90  44  135  CyH (500)  PGMEA (2,000)  90  49  160  CyH (500)  PGMEA (2,000)  90  52  145  CyH (500)  PGMEA (2,000)  90  48  100  CyH (500)  Acid  generator/  Organic  Polymer  crosslinker  Base  solvent  Sensitivity Resolution  (pbw)  (pbw)  (pbw)  (pbw)  (µC/cm 2 )  (nm)  Example  3-1  Polymer 9  Quencher 34  PGMEA (400)  28  80  (100)  (2.50)  CyH (2,000)  PGME (100)  3-2  Polymer 9  Quencher 35  PGMEA (400)  30  80  (100)  (2.50)  CyH (2,000)  PGME (100)  3-3  Polymer 9  Quencher 36  PGMEA (400)  30  80  (100)  (2.50)  CyH (2,000)  PGME (100)  3-4  Polymer 9  Quencher 37  PGMEA (400)  28  85  (100)  (2.50)  CyH (2,000)  PGME (100)  3-5  Polymer 9  Quencher 38  PGMEA (400)  27  80  (100)  (2.50)  CyH (2,000)  PGME (100)  3-6  Polymer 9  Quencher 39  PGMEA (400)  29  80  (100)  (2.50)  CyH (2,000)  PGME (100)  3-7  Polymer 9  Quencher40  PGMEA (400)  30  80  (100)  (2.50)  CyH (2,000)  PGME (100)  3-8  Polymer 9  Quencher41  PGMEA (400)  33  75  (100)  (2.50)  CyH (2,000)  PGME (100)  3-9  Polymer 9  Quencher42  PGMEA (400)  27  75  (100)  (2.50)  CyH (2,000)  PGME (100)  3-10  Polymer 9  Quencher43  PGMEA (400)  26  80  (100)  (2.50)  CyH (2,000)  PGME (100) 