US 7,655,379  B2  20  19  -continued  -continued  5  5  6  6  7  7  E  E  E  E  E  E  E  E  E  E  E  E  E  E  E  E  E  E  E  E  E  E  E  E  E  E  E  E  E  E  E  E  E  E  wherein E comprises an electron-withdrawing group;  p+ is a fluorine free cation.  3.  A method of forming a patterned material feature on a  substrate, said method comprising:  c) a small amount of a base quencher, and  a) providing a material surface on a substrate;  b) forming a photoresist layer over said material surface,  said photoresist comprising  (i) an acid-sensitive imaging polymer that is originally  insoluble in aqueous,  alkaline developers,  but  becomes soluble upon reaction with protons, with or  without the aid of heating;  (ii) A chemically amplified photoresist formulation  comprising:  A) an acid-sensitive imaging polymer that is origi› nally insoluble in aqueous, alkaline developers, but  becomes soluble upon reaction with protons, with  or without the aid of heating;  B) a photoacid generator p+  A- that decomposes into  the acid H+  A- upon irradiation with photons  wherein  A- is the anion of peracceptor-substituted  organic superacids that do not contain fluorine, or  semi-metallic elements  comprising at least one of 4, 5, 6 or 7:  4 E  E  4  7.  The method of claim  6  wherein E comprises at least one  ofCN, CO$_{2}$CH$_{3}$ ,  CO$_{2}$C$_{2}$H$_{5}$ ,  COiCH$_{2}$ ) $_{2}$OH, NO$_{2}$ ,  or H.  6.  The method of claim  3  wherein  A- of said photoacid  generator p+  A- comprises:  5.  The method of claim  3,  wherein E comprises at least one  of a cyano (CN), alkyl, alkyloxy, hydrogen, nitro, alkylcar- bonyloxy, alkoxycarbonyl, chlorine, bromine, iodine, aryl,  aryloxy, arylcarbonyloxy, or aryloxycarbonyl group.  4.  The method of claim  3  wherein  A- comprises the anion  of peracceptor-substituted organic superacids that do not con› tain fluorine, or semi-metallic elements.  wherein E comprises an electron-withdrawing group:  (iii) a small amount of a base quencher;  c) patternwise exposing said photoresist layer to optical,  DUY or  MlN  radiation thereby creating a pattern of  radiation-exposed regions in said photoresist layer,  d) selectively removing portions of said photoresist layer to  expose portions of said material surface, and  e) etching or ion implanting said exposed portions of said  material, thereby forming said patterned material fea› ture. 