Jul.  30,  2020  133  US 2020/0241418 Al  8.  The resist composition of claim  1,  further comprising  an organic solvent.  9.  The resist composition of claim  1,  further comprising  a quencher.  10.  The resist composition of claim  1,  further comprising  a surfactant.  11.  A pattern forming process comprising the steps of  applying the positive resist to composition of claim  1  to form  a resist film on a substrate, exposing the resist film to  high-energy radiation, and developing the exposed resist  film in a developer.  12.  The process of claim  11  wherein the high-energy  radiation is i-line, KrF excimer laser, ArF excimer laser, EB  or EUV of wavelength 3 to 15 nm.  *  *  *  *  * 