Nov. 24, 2020  (45)  Date of Patent:  (54)  EXTREME ULTRAVIOLET  PHOTOLITHOGRAPHY METHOD WITH  INFILTRATION FOR ENHANCED  SENSITIVITY AND ETCH RESISTANCE  c12)  United States Patent  Ouyang  (IO)  Patent No.:  US 10,845,704 B2  US010845704B2  (56)  References Cited  U.S. PATENT DOCUMENTS  OTHER PUBLICATIONS  (57)  ABSTRACT  20 Claims, 8 Drawing Sheets  Related U.S. Application Data  (60)  Provisional application No. 62/752,692, filed on Oct.  30, 2018.  (51)  Int. Cl.  G03F  7132  (2006.01)  (52)  U.S. Cl.  CPC ......................................  G03F  7132  (2013.01)  (58)  Field of Classification Search  CPC ......... G03F 7/0041---0045; G03F 7/028; G03F  7/0285; G03F 7/06; G03F 7/063; G03F  7/32; G03F 7/70033  USPC ................... 355/27, 77; 430/270.1, 322, 323  See application file for complete search history.  (22)  Filed:  Jun. 18, 2019  (21)  Appl. No.:  16/444,175  ( *)  Notice:  Subject to any disclaimer, the term ofthis  patent is extended or adjusted under 35  U.S.C. 154(b) by  O  days.  (73)  Assignee:  TAIWAN SEMICONDUCTOR  MANUFACTURING CO., LTD.,  Hsinchu (TW)  (71)  Applicant:  Taiwan Semiconductor  Manufacturing Co., Ltd.,  Hsin-Chu  (TW)  US 2020/0133131 Al  Apr. 30, 2020  (65)  Prior Publication Data  (72)  Inventor:  Christine Y Ouyang,  Hsinchu (TW)  8,152,922 B2 *  8,796,666 Bl  9,093,530 B2  9,213,234 B2  9,223,220 B2  9,256,133 B2  9,536,759 B2  9,548,303 B2  9,857,684 B2  9,859,206 B2  9,875,892 B2  4/2012 Schmidt ............ C23C 16/45512  118/715  8/2014 Huang et al.  7/2015 Huang et al.  12/2015 Chang  12/2015 Chang  2/2016 Chang  1/2017 Yang et al.  1/2017 Lee et al.  1/2018 Lin et al.  1/2018 Yu et al.  1/2018 Chang et al.  2012/0241411 Al*  9/2012 Darling ................... G03F 7 /405  216/67  2017/0271150 Al*  9/2017 Chang ..................... G03F 7/162  (Continued)  A. Singh, et al., "Impact of Sequential Infiltration Synthesis on  Patten Fidelity ofDSA Lines", Proceedings of SPIE 9425, Advances  in Patterning Material s and Processes XXXII, 94250N (Mar. 20,  2015), doi: 10.1117/12.208609  l.  Primary Examiner  - Colin W Kreutzer  (74)  Attorney, Agent, or Firm  - Haynes and Boone, LLP  The present disclosure provides a method for lithography  patterning in accordance with some embodiments. The  method includes forming a photoresist layer over a sub› strate; performing an infiltration process to introduce a  metallic compound into the photoresist to enhance a sensi› tivity of the photoresist layer to an extreme ultraviolet  (EUV) radiation; performing an exposing process to the  photoresist layer using the EUV radiation; and performing a  developing process to the photoresist layer to form a pat› terned resist layer.  100  \,  Provide a substrate  102  Form an EUV reSisl layer over the  substrate  104  Perform an infiltration process to the  resist layer  106  Perform an exposing process to the resist  layer  108  Perform a developing process to form a  patterned resist layer  11Q  Perform a tabncation process to the  substrate through the openings of the  patterned resist layer  112  106  ~  Coat a meta:-contairnng film on the resist layer  using a metal-containing precursor  106A  Heat the metal-containing matenal layer to  introduce the metal into the resist layer with a  heating mechanism  10 B  Remove the metal-containing material layer  ,  106C  :: ::::::::::::::::::: T  :::::::::::::::::::-•  Bake the resist layer  106D 