TABLE 3-continued  TABLE 2-continued  98  US 9,665,002 B2  97  CH3  I  (-CH2-C-)  )=a  0  A-4  CH3  I  (-CH2-C-)  )=a  0  A-6  CH3  I  (-CH2-C-)  )=a  0  0  B-3  CH3  I  (-CH2-C-)  )=a  0  B-4  B-5  Examples  1-1  to  1-14  and Comparative Examples  1-1  to 1-7  T_A_B_L_E_3 __________ $_{45 }$ Preparation of Resist Composition  A resist composition in solution form was prepared by  dissolving the acid diffusion controlling agent (Q-1) synthe› sized above or comparative acid diffusion controlling agents  (Q-2) to (Q-7), each polymer (Polymers P-1 to P-12 syn- thesized above), a photoacid generator (PAG-X, PAG-Y),  and alkali-soluble surfactant (SF-1) in an organic solvent  containing 0.01 wt % of surfactant A, and filtering through  a Teflonfi filter with a pore size of0.2  µm.  Table  4  shows the  formulation of the resulting resist solution.  The solvent, photoacid generator (PAG-X, PAG-Y),  alkali-soluble surfactant (SF-1 ), surfactant A, and compara› tive acid diffusion controlling agents (Q-2 to Q-7) used  herein are identified below.  PGMEA: propylene glycol monomethyl ether acetate  GBL: y-butyrolactone  PAG-Y:  triphenylsulfonium 2-(adamantane-l-carbony› loxy )-3 ,3 ,3-trifluoro-2-trifluoromethy lpropane- l  -sul- fonate  PAG-X: triphenylsulfonium 2-(adamantane-l-carbony› loxy  )-1,  1,3 ,3 ,3-pentafluoropropane-1-sulfonate  Q-2: 2-( 4-morpholinyl)ethyl octadecanoate  Q-3: triphenylsulfonium camphorsulfonate  B-1  B-2 