1111111111111111 IIIIII IIIII 1111111111 11111 11111 lllll lllll lllll lllll 111111111111111 11111111  US 20210026244Al  c19)  United States  c12)  Patent Application Publication  HOSHINO  c10)  Pub. No.: US 2021/0026244 Al  (43)  Pub. Date:  Jan. 28, 2021  (54)  POSITIVE RESIST COMPOSITION FOR EUV  LITHOGRAPHY AND METHOD OF  FORMING RESIST PATTERN  (71)  Applicant:  ZEON CORPORATION,  Chiyoda-ku,  Tokyo (JP)  (72)  Inventor:  Manabu HOSHINO,  Chiyoda-ku,  Tokyo (JP)  (73)  Assignee:  ZEON CORPORATION,  Chiyoda-ku,  Tokyo (JP)  (21)  Appl. No.:  17/042,912  (22)  PCT Filed:  Apr. 17, 2019  (86)  PCT No.:  § 371 (c)(l),  PCT  I  JP2019/0l 6445  (2) Date:  Sep. 29, 2020  (51)  Int. Cl.  (52)  U.S. Cl.  CPC ..........  G03F  710392  (2013.01);  G03F  712004  (2013.01);  C08F  212108  (2013.01);  C08F  220124  (2013.01);  G03F  7132  (2013.01)  (57)  ABSTRACT  (30)  Foreign Application Priority Data  Publication Classification  Apr. 27, 2018  (JP) ................................. 2018-086161  Provided is a positive resist composition for EUV lithogra› phy that can form a resist film having high sensitivity to  extreme ultraviolet light. The positive resist composition  contains a solvent and a copolymer that includes a monomer  unit (A) represented by general formula  (I)  and a monomer  unit  (B) represented by general formula (II). In the formulae,  R  1  indicates an organic group including 5 or more fluorine  atoms, le indicates a hydrogen atom, a fluorine atom, an  unsubstituted alkyl group, or a fluorine atom-substituted  alkyl group,  R $^{3 }$indicates a hydrogen atom, an unsubstituted  alkyl group, or a fluorine atom-substituted alkyl group, p and  q are each an integer of  O  to 5, and p+q=5.  G03F  71039  G03F  7120  G03F  7132  C08F  220124  C08F  212108  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (I)  Cl  H  -t{-t+- R100C  H  (II) 