US 8,614,033 B2  90  89  The mixture of the above-described each component was  subjected to the microfiltration through a membrane filter  having a pore size of 0.04 µm to obtain a resist coating  solution.  respect to the region of 50 µmin  the longitudinal direction of  thereof, the distance from a reference line where the edge  should be present was measured at arbitrary 30 points by a  scanning electron microscope (S-9220, available from Hita- chi, Ltd.). In addition, the standard deviation of the distance  was determined, and 36 was computed.  It is shown that the  smaller the value, the performance is better.  An unexposed resist film was subjected to dry etching  using anAr/C$_{4}$ F$_{6}$ /0$_{2 }$ gas (a mixed gas having a volume ratio  100/4/2) for 30 seconds with HITACHI U-621. Thereafter,  the residual film rate of the resist was measured and this value  is used as an index of evaluating dry etching resistance.  Very good: 95% or more of residual film rate  Good: at least 90% less than 95%  Poor: less than 90%  Except for the components listed in the following Table 4,  in the same manner as in Example IP, the preparation of the  resist coating solutions (Positive Resist Compositions P2 to  P22, Positive Resist Comparative Compositions Pl and P2),  the production of positive resist patterns, and the evaluation  thereof were performed.  The line pattern having a 100 nm line width (LIS= 1 /1) was  formed in the irradiation amount showing the aforementioned  sensitivity (electron beam irradiation amount). And, with  The cross-sectional profile of a line pattern having a 100  nm line width (LIS= 1/1) in the exposure amount showing the  aforementioned  sensitivity  ( electron  beam  irradiation  amount) was observed using a scanning electron microscope  (S-4300, available from Hitachi Ltd.). In the cross-sectional  profile of the line pattern, when the ratio represented by "the  line width in the bottom part of the line pattern (bottom)/the  lined width in the middle part of the line pattern (half height  position of the height of the line pattern)" is 1.5 or more, it is  evaluated as "tapered"; when the ratio is at least 1.2 less than  1.5, it is evaluated as "slightly tapered"; and when the ratio is  less than 1.2, it is evaluated as "rectangular".  The limiting resolving power (the minimum line width  when the line and the space (line:space=l:>100) were sepa› rated and resolved) in the minimum exposure amount in a  case of resolving an independent line pattern having a 100 nm  line width (line:space=l:>100) was defined as IL resolving  power (nm).  The limiting resolving power (the minimum line width  when the line and the space (line:space=l:1) were separated  and resolved) in the irradiation amount showing the afore› mentioned sensitivity ( electron beam irradiation amount) was  defined as LS resolving power.  The cross-sectional profile of the obtained pattern was  observed using a scanning electron microscope (S-4300,  available from Hitachi Ltd.). The exposure amount (electron  beam irradiation amount) in a case of resolving a resist pattern  having a 100 nm line width (line:space=l:1) was defined as  the sensitivity. The smaller this value, the higher the sensitiv› ity.  The sensitivity, resolution, pattern profile, line edge rough› ness (LER) and dry etching resistance of the obtained pattern  were evaluated by the following methods.  This resist film was pattern-irradiated with electron beams  by using an electron beam lithography apparatus (HL 750,  available from Hitachi Ltd., accelerating voltage: 50 KeV).  After the irradiation, the resist film was heated on a hot plate  at 120°  C. for 90 seconds, dipped for 60 seconds using 2.38% 20  by mass of an aqueous solution of tetramethylammonium  hydroxide (TMAH), and then rinsed with water for 30 sec› onds and dried.  The resist coating solution was coated on the 6-inch wafer  using a spin coater, Mark 8 available from Tokyo Electron  Ltd., and dried on a hot plate at 110°  C. for 90 seconds to 10  obtain a resist film having a film thickness of 100 nm. That is  to say, resist coated mask blanks was obtained.  (3) Production of Resist Film  ( 4) Production of Positive Resist Pattern  [Evaluation of Dry Etching Resistance]  Example 2P to Example 22P, Comparative Example  IP, and Comparative Example 2P  [Sensitivity]  (5) Evaluation of Resist Pattern  [Evaluation of Resolving Power (LS)]  [Evaluation of Resolving Power (IL)]  [Pattern Profile]  [Line Edge Roughness (LER)]  (Exposure to Electron Beam: Positive Type)  High  Molecular  Photoacid  Basic  Composition  Compound  Generator  Compound  Pl  Pl  z42  Bl  (0.6 g)  (0.12 g)  (0.002 g)  P2  P2  z42  Bl  (0.6 g)  (0.12 g)  (0.002 g)  P3  P3  z42  Bl  (0.6 g)  (0.12 g)  (0.002 g)  P4  P4  z42  Bl  (0.6 g)  (0.12 g)  (0.002 g)  PS  PS  z42  Bl  (0.6 g)  (0.12 g)  (0.002 g)  P6  P6  z42  Bl  (0.6 g)  (0.12 g)  (0.002 g)  P7  P7  z42  Bl  (0.6 g)  (0.12 g)  (0.002 g)  PS  PS  z42  Bl  (0.6 g)  (0.12 g)  (0.002 g)  P9  P9  z42  Bl  (0.6 g)  (0.12 g)  (0.002 g)  PIO  PIO  None  Bl  (0.72 g)  (0.002 g)  Pll  Pll  z42  Bl  (0.6)  (0.12 g)  (0.001 g)  P12  P3  z2  B2  (0.6)  (0.12 g)  (0.008 g)  P13  P3/P5  z37  B4  (0.3 g/0.3 g)  (0.12 g)  (0.002 g)  P14  P3  z45  BS  (0.6 g)  (0.12 g)  (0.002 g)  P15  P3  z49/z58  B6  (0.6 g)  (0.06  g/  (0.002 g)  0.06 g)  P16  P3  z61  B3  (0.6 g)  (0.12 g)  (0.002 g)  P17  P3  z63  Bl  (0.6 g)  (0.12 g)  (0.002 g)  Solvent  Sl  (9.0 g)  S2/Sl  (5.0 g/4.0 g)  S2/S3  (5.0 g/4.0 g)  S2/Sl  (5.0 g/4.0 g)  S2/Sl  (5.0 g/4.0 g)  S2/S4  (5.0 g/4.0 g)  S2/S5  (5.0 g/4.0 g)  S2/Sl  (5.0 g/4.0 g)  S2/S3  (5.0 g/4.0 g)  Sl/S3  (5.0 g/4.0 g)  S2/S3  (5.0 g/4.0 g)  S2/S7  (5.0 g/4.0 g)  S2/Sl  (5.0 g/4.0 g)  S2/Sl  (5.0 g/4.0 g)  S2/Sl  (5.0 g/4.0 g)  S2/Sl  (5.0 g/4.0 g)  S2/Sl  (5.0 g/4.0 g)  TABLE4 