US 20200209747Al  c19)  United States  c12)  Patent Application Publication  Hatakeyama et al.  c10)  Pub. No.: US 2020/0209747 Al  (43)  Pub. Date:  Jul. 2, 2020  (54)  POSITIVE RESIST COMPOSITION AND  PATTERNING PROCESS  (71)  Applicant:  Shin-Etsu Chemical Co., Ltd.,  Tokyo  (JP)  (72)  Inventors:  Jun Hatakeyama,  Joetsu-shi (JP);  Masaki Ohashi,  Joetsu-shi (JP)  (73)  Assignee:  Shin-Etsu Chemical Co., Ltd.,  Tokyo  (JP)  (21)  Appl. No.:  16/717,022  (22)  Filed:  Dec. 17, 2019  (52)  U.S. Cl.  CPC ..........  G03F 710392  (2013.01);  G03F 710045  (2013.01);  G03F 710048  (2013.01);  C07C  381/12  (2013.01);  C08L 25106  (2013.01);  C08L 33/08  (2013.01);  C08L 33/14  (2013.01);  G03F  712002  (2013.01)  (51)  Int. Cl.  A positive resist composition comprising a base polymer  comprising recurring units containing an optionally substi› tuted amino group and iodine exhibits a high sensitivity,  high resolution, low edge roughness  (LER, LWR) and small  size variation, and forms a pattern of good profile after  exposure and development.  Dec. 27, 2018  (JP) ................................. 2018-244436  (30)  Foreign Application Priority Data  (57)  ABSTRACT  Publication Classification  G03F  71039  G03F  71004  G03F  7120  C08L  25106  C08L 33/08  C08L 33/14  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01) 