arXiv:1410.8736v3 [physics.optics] 13 Jan 2015 © 2015 Optical Society of America Abstract: In this paper we present a novel fabrication technique for silicon nitride (Si$_{3}$N$_{4}$) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si$_{3}$N$_{4}$. Using this technique no stress-induced cracks in the Si$_{3}$N$_{4}$ layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm. High confinement, high yield Si$_{3}$N$_{4}$ waveguides for nonlinear optical applications J¨ orn P. Epping, 1 Marcel Hoekman, 2 Richard Mateman, 2 Arne Leinse, 2 Ren´e G. Heideman, 2 Albert van Rees, 3 Peter $^{1}$Laser Physics & Nonlinear Optics Group, Faculty of Science and Technology, MESA+ Institute for Nanotechnology, University of Twente, P. O. Box 217, Enschede 7500 AE, The Netherlands $^{2}$LioniX BV, PO Box 456, Enschede 7500 AL, The Netherlands $^{3}$XiO Photonics BV, PO Box 1254, Enschede 7500 BG, The Netherlands $^{4}$XUV Optics Group, Faculty of Science and Technology, MESA+ Institute for Nanotechnology, University of Twente, P. O. Box 217, Enschede 7500 AE, The Netherlands $^{∗}$K.J.Boller@utwente.nl J.M. van der Slot, 1 Chris J. Lee, 1 , 4 and Klaus-J. Boller 1 , ∗