Nov. 17,  2016  37  US 2016/0334706 Al  [0122]  The polymeric surfactant preferably has a Mw of  1,000 to 50,000, more preferably 2,000 to 20,000 as mea› sured by GPC versus polystyrene standards. A surfactant  with a Mw outside the range may be less effective for  surface modification and cause development defects. The  polymeric surfactant is preferably formulated in an amount  of0.001 to 20 parts, and more preferably 0.01 to 10 parts by  weight per 100 parts by weight of the base resin. Reference  should also be made to JP-A 2010-215608.  [0123]  A further embodiment of the invention is a pattern  forming process using the resist composition defined above.  A pattern may be formed from the resist composition using  any well-known lithography process. The preferred process  includes at least the steps of forming a resist film on a  substrate, exposing it to high-energy radiation, and devel› oping it in a developer.  Process  [0124]  First the resist composition is applied onto a sub› strate for integrated circuitry fabrication ( e.g., Si, SiO$_{2}$ ,  SiN,  SiON, TiN, WSi, BPSG, SOG, organic antireflective film,  etc.) or a substrate for mask circuitry fabrication (e.g., Cr,  CrO, CrON, MoSi, etc.) by a suitable coating technique such  as spin coating. The coating is prebaked on a hot plate at a  temperature of 60 to 150°  C. for 1 to 10 minutes, preferably  80 to 140°  C. for 1 to 5 minutes. The resulting resist film is  generally 0.05 to 2.0  µm  thick. Through a photomask having  a desired pattern which is disposed over the resist film, the  resist film is then exposed to high-energy radiation such as  KrF excimer laser, ArF excimer laser or EUV in an exposure  dose preferably in the range of 1 to 200 mJ/cm 2 ,  more  preferably 10 to 100 mJ/cm 2 .  Light exposure may be done  by a conventional lithography process or in some cases, by  an immersion lithography process of providing liquid  impregnation, typically water, between the projection lens or  mask and the resist film. In the case of immersion lithog› raphy, a protective film which is insoluble in water may be  used. The resist film is then baked (PEB) on a hot plate at 60  to 150°  C. for 1 to 5 minutes, and preferably at 80 to 140°  C. for 1 to 3 minutes. Finally, development is carried out  using as the developer an aqueous alkaline solution, such as  a 0.1 to 5 wt%, preferably 2 to 3 wt%, aqueous solution of  tetramethylammonium hydroxide (TMAH), this being done  by a conventional method such as dip, puddle, or spray  development for a period of0.1 to 3 minutes, and preferably  0.5 to 2 minutes. While the exposed region of resist film is  dissolved away, the desired positive pattern is formed on the  substrate.  [0125]  While the water-insoluble protective film which is  used in the immersion lithography serves to prevent any  components from being leached out of the resist film and to  improve water slippage at the film surface, it is generally  divided into two types. The first type is an organic solvent› strippable protective film which must be stripped, prior to  alkaline development, with an organic solvent in which the  resist film is not dissolvable. The second type is an alkali› soluble protective film which is soluble in an alkaline  developer so that it can be removed simultaneously with the  removal of solubilized regions of the resist film. The pro› tective film of the second type is preferably of a material  comprising a polymer having a 1,1,1,3,3,3-hexafluoro-2- propanol residue (which is insoluble in water and soluble in  an alkaline developer) as a base in an alcohol solvent of at  least 4 carbon atoms, an ether solvent of 8 to 12 carbon  [0121]  For the surfactant which is insoluble or substan› tially insoluble in water and soluble in alkaline developer,  reference may be made to JP-A2008-122932, 2010-134012,  2010-107695, 2009-276363, 2009-192784, 2009-191151,  2009-098638, 2010-250105, and 2011-042789.  F3C  H  H  (~o  HOfb  F3C  H  H  (~o  0  -continued 