(B)-1  :r1)  ~  I  ~  e  F2  ~Y)  O  0-S  V  V  1~  0~  R-Jif  •"  0  0  (C)-4  -continued  [Chemical Formula 99]  182  US  9,104,101 B2  181  It is thought that a higher accelerating voltage is advanta› geous in forming a fine resist pattern, but in the present  evaluation, in order to reproduce a state that simulates the  state in which OoB light is generated, a comparatively low  accelerating voltage of 50 keV was employed for the expo› sure conditions.  [Evaluation of Sensitivity and Resolution]  The optimum exposure dose Eop (µC/cm 2 )  at which an LIS  pattern having a line width of 100 nm and a pitch of 200 nm  was formed in the aforementioned "Formation of Resist Pat› tern" was determined and recorded as the sensitivity. The  results are listed in Table 4.  Further, the resolution limit at the above Eop value was also  determined. The results are shown in Table 4 as "resolution".  [Evaluation of Line Edge Roughness (LER)]  For the LS pattern formed in the aforementioned "Forma› tion of Resist Pattern", the value of  3a  was determined as a  measure of the LER. This value  of3a  (units: nm) represents  the value of three times the standard deviation (  a)  for line  width values measured at 400 points along the lengthwise  direction of the line using a scanning electron microscope  (product name: S-9220, manufactured by Hitachi High-Tech› nologies Corporation, accelerating voltage: 800 V). The  smaller the value  of3a,  the lower the level of roughness in the  line side walls, meaning an LS pattern of more uniform width  has been obtained. The results are shown in Table 4.  [Evaluation of Cross-Sectional Shape]  Using a scanning electron microscope (product name:  SU8000, manufactured by Hitachi High-Technologies Cor› poration, accelerating voltage: 800 V), the cross-sectional  shape of an LS pattern having a line width of 100 nm and a  pitch of200 nm formed in the aforementioned "Formation of  Resist Pattern" was inspected. Patterns for which the cross› sectional shape was rectangular were evaluated as "A",  whereas patterns having a rounded top shape were evaluated  as "B". The results are shown in Table 4.  [Evaluation of Sensitivity to KrF Excimer Laser Light (Ea  Measurement)]  Using a spinner, the resist composition of each example  was applied uniformly onto an 8-inch silicon substrate that  had been surface-treated withhexamethyldisilazane (HMDS)  for 36 seconds at 90°  C., and a bake treatment (PAB) was then  conducted for 60 seconds at a PAB temperature shown in  Table 4, thereby forming a resist film (thickness: 60 nm). This  resist film was subjected to exposure using a KrF exposure  apparatus S-203B (manufactured by Nikon Corporation), and  was then subjected to a bake treatment (PEB) for 60 seconds  at a PEB temperature shown in Table 4, followed by devel› opment for 60 seconds at 23 °  C. in a 2.38% by weight aqueous  solution of tetramethylammonium hydroxide (TMAH)  (product name: NMD-3, manufactured by Tokyo Ohka  Kogyo Co., Ltd.).  The above operation was performed while the exposure  dose was changed (increased in a stepwise manner from Oto  50 mJ/cm 2 ), and the lowest exposure dose (mJ/cm 2 )  at which  the resist film within the exposed portions was removed was  recorded as the Ea sensitivity. Compositions for which the  resist film within the exposed portions was not removed even  when the exposure dose reached 50 mJ/cm 2 ,  namely compo› sitions for which the value of the Ea sensitivity exceeded 50  mJ/cm 2 ,  were deemed to have no sensitivity to KrF excimer  laser light. The results are shown in Table 4. In Table 4, "N.D."  indicates that the composition lacked sensitivity to KrF exci› mer laser light.  As a result, in each example, a line and space resist pattern  (hereafter referred to as an "L/pattern") having a line width of  100 nm and a pitch of 200 nm was formed.  Using a spinner, the resist composition of each example  was applied uniformly onto an 8-inch silicon substrate that  had been surface-treated withhexamethyldisilazane (HMDS)  for36 seconds at 90°  C., and a bake treatment (P AB)was then  conducted for 60 seconds at a PAB temperature shown in  Table 4, thereby forming a resist film (thickness: 60 nm). This  resist film was subjected to patterning (exposure) with an  electron beam exposure apparatus HL800D (VSB) (manufac› tured by Hitachi Ltd.) using an accelerating voltage of 50 ke  Y,  and was then subjected to a bake treatment (PEB) for 60  seconds at a PEB temperature shown in Table 4, followed by  development for 60 seconds at 23°  C. in a 2.38% by weight  aqueous  solution of tetramethylammonium hydroxide  (TMAH) (product name: NMD-3, manufactured by Tokyo  Ohka Kogyo Co., Ltd.).  Using each of the obtained resist compositions, the follow› ing evaluations were performed.  [Formation of Resist Pattern] 