US 2020/0117085 Al  11  Apr. 16, 2020  [0124]  fl: greater than or equal to 1 wt % and less than 3  wt % dissolved in xylene  [0125]  X: less than 1 wt % dissolved in xylene.  Storage Stability  [0126]  Storage stability of the semiconductor resist com› positions according to Examples 1 to 8 and Comparative  Example was evaluated by allowing the resist compositions  to stand for a particular time at room temperature (0°  C. to  30° C.) and examining their precipitation degrees with  naked eyes. The results are denoted as follows:  [0127]  o: storable for greater than or equal to 1 month  [0128]  fl: storable for 1 week to less than 1 month  [0129]  X: storable for less than 1 week  TABLE 1  solubility  storage stability  Dg(mJ/cm 2 )  Example 1  0  0  22.72  Example 2  0  0  5.85  Example 3  0  0  25.21  Example 4  0  0  18.44  Example 5  0  0  15.75  Example 6  LI.  0  31.18  Example 7  LI.  0  25.21  Example 8  LI.  0  31.18  Example 9  0  0  18.44  Comparative Example  X  [0130]  Referring to the results of Table 1, the semicon› ductor resist compositions according to Examples 1 to 9  showed excellent solubility and storage stability compared  with that of the Comparative Example, and the patterns  formed of the resist compositions of Examples 1 to 8 showed  excellent sensitivity compared with a pattern formed of the  semiconductor resist composition according to Comparative  Example. In contrast, the semiconductor resist composition  according to Comparative Example showed insufficient  solubility about (in) a xylene solvent, and thus storage› stability of the composition and pattern formation by using  the same were difficult to evaluate.  [0131]  A substrate coated with each resist according to  Examples 1 to 9 and  [0132]  Comparative Example was exposed to an extreme  ultraviolet (UV) ray (Lawrence Berkeley National Labora› tory Micro Exposure Tool). A 18 nm line pattern of 36 nm  pitch was transferred on a wafer by using a wavelength  radiation of 13.5 nm, a dipole illumination, and a numerical  aperture of 0.3, and an imaging ray dose of 67 mJ/cm 2 .  Subsequently, the patterned resist and substrate was baked  (PEB) at 180°  C. for 2 minutes. Subsequently, the film was  dipped in 2-heptanone for 30 seconds and washed with the  same developing agent additionally for 15 seconds to form  a negative tone image, that is, to remove a non-exposed  coating region. After the development, the film was finally  baked on a 150°  C. hot plate for 5 minutes. FIG.  6  is a SEM  image of Example 3 (using the compound of Chemical  Formula 7) showing a resist line patterned with a pitch of36  nm to have a calculated line width roughness (LWR) of 3.4  nm.  [0133]  Referring to FIG.  6,  a photoresist pattern satisfying  a desired line and space was well formed without a pattern  collapse.  Evaluation 2  [0134]  As used herein, expressions such as "at least one  of," "one of," and "selected from," when preceding a list of  elements, modify the entire list of elements and do not  modify the individual elements of the list. Further, the use of  "may" when describing embodiments of the present inven› tion refers to "one or more embodiments of the present  invention."  [0135]  As used herein, the terms "use," "using," and  "used" may be considered synonymous with the terms  "utilize," "utilizing," and "utilized," respectively.  [0136]  In addition, the terms "substantially," "about," and  similar terms are used as terms of approximation and not as  terms of degree, and are intended to account for the inherent  deviations in measured or calculated values that would be  recognized by those of ordinary skill in the art.  [0137]  Also, any numerical range recited herein is  intended to include all sub-ranges of the same numerical  precision subsumed within the recited range. For example, a  range of "1.0 to 10.0" is intended to include all subranges  between (and including) the recited minimum value of 1.0  and the recited maximum value of 10.0, that is, having a  minimum value equal to or greater than 1.0 and a maximum  value equal to or less than 10.0, such as, for example, 2.4 to  7.6. Any maximum numerical limitation recited herein is  intended to include all lower numerical limitations sub› sumed therein and any minimum numerical limitation  recited in this specification is intended to include all higher  numerical limitations subsumed therein. Accordingly, Appli› cant reserves the right to amend this specification, including  the claims, to expressly recite any sub-range subsumed  within the ranges expressly recited herein.  [0138]  Hereinbefore, the certain example embodiments of  the present invention have been described and illustrated,  however, it should be apparent to a person with ordinary  skill in the art that the present invention is not limited to the  example embodiment as described, and may be variously  modified and transformed without departing from the spirit  and scope of the present invention. Accordingly, the modi› fied or transformed example embodiments may be under› stood from the technical ideas and aspects of the present  invention, and the modified example embodiments are  within the scope of the appended claims of the present  invention and equivalents thereof.  What is claimed is:  1.  A semiconductor resist composition, comprising  an organometallic compound represented by Chemical  Formula 1, and  a solvent:  Chemical Formula 1  R4  I  R $^{1}$--Sn-R3  I  ,  R2  wherein, in Chemical Formula 1,  R 1  is selected from a substituted or unsubstituted Cl to  C20 alkyl group, a substituted or unsubstituted C3 to  C20 cycloalkyl group, a substituted or unsubstituted C2  to C20 alkenyl group, a substituted or unsubstituted C2  to C20 alkynyl group, a substituted or unsubstituted C6  to C30 aryl group, a substituted or unsubstituted C6 to  C30 benzyl group, and-Rc-O-Rd, wherein Re is a 