(IO)  Patent No.:  US 9,152,050 B2  (45)  Date of Patent:  Oct. 6, 2015  c12)  United States Patent  Hatakeyama  (54)  RESIST COMPOSITION AND PATTERNING  PROCESS  (71)  Applicant:  SHIN-ETSU CHEMICAL CO., LTD.,  Tokyo (JP)  (72)  Inventor:  Jun Hatakeyama,  Joetsu (JP)  (73)  Assignee:  SHIN-ETSU CHEMICAL CO., LTD.,  Tokyo (JP)  ( *)  Notice:  Subject to any disclaimer, the term ofthis  patent is extended or adjusted under 35  U.S.C. 154(b) by  O  days.  (21)  Appl. No.:  14/013,163  (22)  Filed:  Aug. 29, 2013  (65)  Prior Publication Data  US 2014/0065546 Al  Mar. 6, 2014  (30)  Foreign Application Priority Data  (56)  References Cited  U.S. PATENT DOCUMENTS  FOREIGN PATENT DOCUMENTS  (57)  ABSTRACT  (52)  U.S. Cl.  CPC ............  G03F  710397  (2013.01);  G03F  710045  (2013.01);  G03F  710046  (2013.01);  G03F  710048  (2013.01);  G03F  7111  (2013.01);  G03F  7120  (2013.01)  ( 58)  Field of Classification Search  CPC ..... G03F 7/0045; G03F 7/0046; G03F 7/039;  G03F 7/0392; G03F 7/0397; G03F 7/20;  G03F 7/2002  USPC ............... 430/270.1, 326, 907, 910, 921, 925  See application file for complete search history.  EP  JP  JP  JP  JP  JP  JP  JP  JP  JP  JP  0 473 547 Al  4-230645  A  3429592 B2  2005-084365  A  2006-045311 A  2006-169302  A  2006-178317 A  3865048 B2  2008-239918  A  4771974 B2  4900603 B2  3/1992  8/1992  7/2003  3/2005  2/2006  6/2006  7/2006  1/2007  10/2008  9/2011  3/2012  * cited by examiner  Primary Examiner  - Anca Eoff  (74)  Attorney,  Agent,  or Firm  - Westerman,  Daniels  & Adrian, LLP  Hattori,  G03F  71039  G03F  7120  G03F  71004  G03F  7111  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (51)  Int. Cl.  Sep. 5, 2012  (JP) ................................. 2012-194753  7 Claims, No Drawings  6,448,420 Bl  6,746,817 B2  7,537,880 B2  7,598,016 B2  9/2002 Kinsho et al.  6/2004 Takeda et al.  5/2009 Harada et al.  10/2009 Kobayashi et al.  2003/0134224 Al*  2007/0134588 Al*  2007/0178405 Al *  2008/0090172 Al  2008/0102407 Al *  2011/0183263 Al*  7/2003 Mizutani et al ............ 430/270.1  6/2007 Kanda et al. ............... 430/270.1  8/2007 Kanda et al. ............... 430/270.1  4/2008 Hatakeyama et al.  5/2008 Ohsawa et al. ............ 430/286.1  7/2011 Takahashi et al .......... 430/270.1  A polymer capable of increasing alkali solubility under the  action of acid, as a base resin is blended with a polymer  comprising recurring units derived from a styrene having  1,1,1,3,3,3-hexafluoro-2-propanol as a polymeric additive to  formulate a resist composition. The photoresist film formed  using the resist composition is effective for minimizing out› gassing therefrom during the EUV lithography, reducing  LWR after development, and suppressing formation of blob  defects after development because of its hydrophilic surface.  I 1111111111111111 11111 111111111111111 1111111111 1111111111 111111111111111111  US009152050B2 