we have gained deepened understanding of the factors that determine the recombi nation rate in disordered organic semiconductors. The bipolar 3D-ME model presented in this work opens up a route towards strongly accelerated OLED device simulations. It can be further extended and im proved in various ways. In this work, the simulations are limited t o organic semicon ductors with a Gaussian DOS. It is important in future t o extend the model beyond a Gaussian DOS, because in practice (a) the emissive layers are composed of a host- guest system, and (b) in some materials an exponential DOS of traps is present. We envisage that the methodology for including recombination, developed in Section II.B for the case of a Gaussian DOS and based on a comparison of percolation and mean-field based transport theories, can be extended t o other types of the density of states. No calibration using KMC simulations would then be needed. It is also important t o extend the model t o include excitonics (e.g. exciton diffusion, recombi nation, annihilation, quenching, intersystem crossing, and etc.), which is crucial for OLED simulations. However, while in 3D-KMC simulations these processes could be added straightforwardly, in 3D-ME simulations the inclusion of these processes requires deeper insight into the device physics. In this section, we present a full theoretical description of charge-carrier recombi nation in the 3D-ME simulation model, including a detailed derivation and numerical evaluation of the recombination prefactor that enters Eq. (3) in the main text. V) Supplemental information Charge-carrier recombination in the 3D-ME simulation model In the bipolar 3D-ME model, the time-dependence of the hole and electron con centrations at a site i , and c$^{fi}$, respectively, is described as follows: A . THEORETICAL EXPRESSION FOR THE RECOMBINATION P R E FAC TOR