The understanding of the physics of semiconductor devices [1] has never been so impor- tant, since silicon-based integrated circuits are facing increasing reliability and scaling issues. Quantum Computing [16], DNA Computing [15], and many other alternatives are arising as possible substitutes to the technology of the silicon-based computation, but these seem to be very distant from the reality of our day-by-day. Hence, the understanding of the reliability effects in semiconductors is of paramount importance for the Microelectronics Industry, that is more and more dependent of new results from an interdisciplinary Physics and their ramifications. Complementary metal-oxide semiconductors (or simply CMOS devices) have an impor- tant role in the development of the information and electronic industry. A scheme of this device can be represented basically by figure 2. As can be observed, it is composed by a thin metal plate, followed by an insulating layer (e.g., SiO$_{2}$), and finally a semiconductor layer (Silicon-Si). The working of device supposes two voltages: 1. The gate-source voltage ( V$_{GS}$ ), which controls the Fermi-level of charge carriers in the semiconductor, i.e., the electrons are attracted with larger or smaller intensity to the interface between the oxide and semiconductor according to the magnitude of V$_{GS}$ ; 2. The drain source voltage ( V$_{DS}$ ), responsible to move the electrons to compose the current (drain current). The uniformity of this current can be affected by charge traps found close to the semiconductor-insulator interface. In this context the rules of capture and emission of charge carriers by traps in semiconductor devices lead to irregular signals (noise) in the current which can be observed in figure 1. In this figure we observe how the current of device is affected by a single trap. The fluctu- ations experimentally observed are caused by the effect of the superposition of a number of traps, under different conditions and moreover, we can consider fluctuations from a sample of devices for completely describing this phenomena (see for example [4]). Such fluctuations are called random telegraph signals [3]. In other contexts, as for example Ni/NiO/Co junctions [10], such fluctuations are even able to govern magnetoresistance and their study also will be very important in the context of nanostructures (see for example [11], [12]). The capture and emission of charge carriers by the traps is described as a simple Poisson 2