Feb.4,2021  125  US 2021/0033969 Al  silicon-containing spin-on hard mask SHB-A940 (Shin-Etsu  Chemical Co., Ltd., silicon content 43 wt%) and prebaked  on a hotplate at 105°  C. for 60 seconds to form a resist film  of 50 nm thick Using an EUV scanner NXE3300 (ASML,  NA 0.33, a 0.9/0.6, quadrupole illumination), the resist film  was exposed to EUV in a dose of 20 to 40 mJ/cm 2  through  a mask bearing a hole pattern at a pitch 46 nm (on-wafer  size) and +20% bias. The resist film was baked (PEB) on a  hotplate at the temperature shown in Tables 1 to 3 for 60  seconds and developed in a 2.38 wt % TMAH aqueous  solution for 30 seconds to form a hole pattern having a size  of 23 nm in Examples 1 to 33 and Comparative Examples 1  to 5 or a dot pattern having a size of 23 nm in Example 34  and Comparative Example 6.  [0169]  The resist pattern was observed under CD-SEM  (CG-5000, Hitachi High-Technologies Corp.). The exposure  dose that provides a hole or dot pattern having a size of 23  nm is reported as sensitivity. The size of 50 holes or dots was  measured, from which a size variation (3a) was computed  and reported as CDU.  [0170]  The resist composition is shown in Tables 1 to 3  together with the sensitivity and CDU of EUV lithography.  [0168]  Each of the resist compositions in Tables 1 to 3 was  spin coated on a silicon substrate having a 20-nm coating of  Polymer  (pbw)  Example 17  Polymer 2  (100)  Acid  generator  Quencher  (pbw)  (pbw)  Quencher 17  (5.07)  Organic solvent PEB temp. Sensitivity CDU  (pbw)  ( 0  c.)  (mJ/cm 2 )  (nm)  PGMEA (2,500) 80  DAA (500)  28  2.7  Acid  Example  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  Polymer  (pbw)  Polymer 1  (100)  Polymer 1  (100)  Polymer 1  (100)  Polymer 1  (100)  Polymer  I  (100)  Polymer 1  (100)  Polymer 2  (100)  Polymer 2  (100)  Polymer 2  (100)  Polymer 2  (100)  Polymer 2  (100)  Polymer 2  (100)  Polymer 2  (100)  Polymer 2  (100)  Polymer 2  (100)  Polymer 2  (100)  generator  Quencher  (pbw)  (pbw)  PAG 1  Quencher 1  (20)  (4.27)  PAG 2  Quencher 2  (20)  (4.41  PAG 3  Quenches 3  (20)  (4.55)  PAG4  Quencher 4  (20)  (5.03)  PAG 5  Quencher 5  (20)  (3.95)  PAG 6  Quencher 6  (20)  (3.61)  Quencher 7  (4.37)  Quencher 8  (4.71)  Quencher 9  (4.05)  Quencher 10  (7.62)  Quencher 11  (3.87)  Quencher 12  (5.59)  Quencher 13  (4.95)  Quencher 14  (4.75)  Quencher 15  (6.07)  Quencher 16  (4.55)  Organic solvent PEB temp. Sensitivity CDU  (Pbw)  ( 0  c.)  (mJ/cm 2 )  (nm)  PGMEA (3,000) 80  27  3.1  PGMEA (3,000) 80  25  3.2  PGMEA (3,000) 80  27  3.3  PGMEA (3,000) 80  22  3.2  PGMEA (3,000) 80  26  2.8  PGMEA (3,000) 80  23  3.1  PGMEA (2,500) 80  24  2.6  DAA (500)  PGMEA (2,500) 80  24  2.8  DAA (500)  PGMEA (2,500) 80  23  2.5  DAA (500)  PGMEA (2,500) 80  23  2.6  DAA (500)  PGMEA (2,500) 80  25  2.6  DAA (500)  PGMEA (2,500) 80  23  2.7  DAA (500)  PGMEA (2,500) 80  25  2.6  DAA (500)  PGMEA (2,500) 80  25  2.7  DAA (500)  PGMEA (2,500) 80  26  2.7  DAA (500)  PGMEA (2,500) 80  22  2.7  DAA (500)  TABLE 1  TABLE 2  -continued  Comparative Quencher 3  Comparative Quencher 4  EUV Lithography Test 