US 7,781,141 B2  22  21  TABLE 4-continued  The following lithographic results (set forth in Table 5  below) were obtained upon patterned exposure (193 nm) of  the photoresist with specified barrier composition layers (i.e.  barrier composition layers of Example  1  and 6).  TABLES  EXAMPLE9  Lithographic Processing  EXAMPLE  10  Optical Properties of Barrier Composition Layer  TABLE6  Optical properties of barrier compositions were evaluated  at 193 nm and 248 nm. Results are set forth in Table 6 below.  Barrier Performance as a Function of Top Layer Composition and  Prewet/Rinse Step  Top Layer  IPA Prewet  Water Prerinse Pre Exposure Post Exposure  Example 5  Example 6  No  No  no  no  2.4  0.9  9.2  2.2  Exposure Results using an  ArF  High  NA  Step and Scan Tool  Resist+  Resist+  Barrier  Barrier  Layer  Layer  Property  Resist  (Example 1)  (Example 6) Unit  Depth of Focus at  0.45  0.42  micrometer  10% Exposure  LER at nominal  7.0  7.2  7.3  nanometer  focus and  exposure  Optical properties of barrier composition layers  Optical Property Wavelength  n  k  n  k  193 nm  193 nm  248nm  248nm  Example 1  1.592  0.0022  1.511  0.0000  Example 6  1.543  0.0005  1.479  0.0000  What is claimed is:  1.  A method for processing a photoresist composition,  comprising:  (a) applying on a substrate a photoresist composition;  (b) applying above the photoresist composition an organic  barrier composition layer;  ( c) in a single step, thermally treating the applied photore› sist composition and barrier layer composition to  remove solvent from the applied photoresist composi› tion and barrier layer composition; and  ( d) immersion exposing the photoresist layer to activating  radiation.  2.  The method of claim  1  wherein solvent of the photoresist  composition is not removed by thermal treatment prior to  applying the barrier layer composition.  3.  The method of claim  1  wherein the barrier composition  comprises one or more resins that comprise Si atoms.  4.  The method of claim  1  wherein the barrier composition  comprises one or more silsesquioxane or siloxane resins.  5.  The method of claim  1  wherein the barrier composition  comprises one or more fluorinated organic resins.  6.  The method of claim  1  wherein the barrier composition  is substantially free of aromatic groups.  7.  A method for processing a photoresist composition,  comprising:  8.  The method of claim  7  wherein the barrier composition  comprises zirconia.  9.  The method of claim  7  wherein the barrier composition  comprises hafnia.  10.  The method of claim  7  wherein the barrier composition  comprises one or more fluorinated organic resins.  11.  The method of claim  7  wherein the barrier composition  is substantially free of aromatic groups.  12.  The method of claim  8  wherein the barrier composition  comprises one or more fluorinated organic resins.  13.  The method of claim  8  wherein the barrier composition  is substantially free of aromatic groups.  (a) applying on a substrate a photoresist composition;  (b) applying above the photoresist composition a barrier  composition that comprises zirconia or hafnia;  ( c) immersion exposing the photoresist layer to radiation  activating for the photoresist composition.  *  *  *  *  * 