Jul. 21, 2016  49  US 2016/0209749 Al  2.  The pattern forming method according to claim  1,  3.  The pattern forming method according to claim  1,  4.  The pattern forming method according to claim  1,  5.  The pattern forming method according to claim  1,  6.  The pattern forming method according to claim  1,  7.  The pattern forming method according to claim  6,  8.  The pattern forming method according to claim  1,  9.  The pattern forming method according to claim  1,  10.  A method for forming a patterned mask, comprising:  11.  The method for forming a patterned mask according to  claim  10,  12.  The method for forming a patterned mask according to  claim  10,  13.  The method for forming a patterned mask according to  claim  10,  14.  The method for forming a patterned mask according to  claim  10,  15.  The method for forming a patterned mask according to  claim  10,  16.  The method for forming a patterned mask according to  claim  15,  17.  The method for forming a patterned mask according to  claim  10,  18.  The method for forming a patterned mask according to  claim  10,  wherein, in the formula,  19.  A method for manufacturing an electronic device, com› prising:  20.  A method for manufacturing an electronic device, com› prising:  *  *  *  *  *  wherein a top width/bottom width which is a ratio of the top  width to the bottom width of the line pattern formed in  Step (III) is 1.01 to 1.50.  wherein a top width/bottom width which is a ratio of the top  width to the bottom width of the line pattern formed in  Step (III) is 1.05 to 1.30.  wherein the thickness of the second film formed in Step  (IV) is  5 nm to 30 nm.  wherein the second film formed in Step (IV) is a silicon  oxide film.  wherein, in Step (IV), the line-and-space pattern is coated  with the second film by a chemical vapor deposition  method.  wherein the coating with the second film by the chemical  vapor deposition method is performed under tempera› ture conditions of 100°  C. to 300°  C.  wherein a C Log P value of (B) the compound that gener› ates an acid by irradiation with active light or radiation is  0 to 4.0.  wherein (B) the compound that generates an acid by irra› diation with active light or radiation is a compound  represented by the following General Formula (IIIB-2),  and  x+  represents an organic cation, and  Q$_{61 }$represents a group having an alicyclic group, a group  having a lactone structure, a group having a sultone  structure, or a group having a cyclic carbonate structure.  wherein, in the formula,  Step (I) of forming a first film by applying an active light› sensitive or radiation-sensitive resin composition which  contains (A) a resin having a repeating unit having a  group that is decomposed by the action of an acid and  generates a polar group and (B) a compound that gener› ates an acid by irradiation with active light or radiation to  a substrate;  Step (II) of exposing the first film;  Step (III) of forming a first line-and-space pattern by devel› oping the exposed first film;  Step (IV) of coating the first line-and-space pattern with a  second film;  Step  (V) of removing the second film of an upper surface  and a space portion of the line pattern in the first line› and-space pattern and leaving the second film only on  the side wall of the line pattern; and  Step (VI) of forming a second line-and-space pattern by  removing the line pattern,  wherein the top width of the line pattern of the first line› and-space pattern formed in Step (III) is larger than the  bottom width thereof.  wherein a top width/bottom width which is a ratio of the top  width to the bottom width of the line pattern formed in  Step (III) is 1.01 to 1.50.  wherein a top width/bottom width which is a ratio of the top  width to the bottom width of the line pattern formed in  Step (III) is 1.05 to 1.30.  wherein the thickness of the second film formed in Step  (IV) is 5 nm to 30 nm.  wherein the second film formed in Step (IV) is a silicon  oxide film.  wherein, in Step (IV), the pattern is coated with the second  film by a chemical vapor deposition method.  wherein the coating with the second film by the chemical  vapor deposition method is performed under tempera› ture conditions of 100°  C. to 300°  C.  wherein a C Log P value of the compound (B) that gener› ates an acid by irradiation with active light or radiation is  0 to 4.0.  wherein the compound (B) that generates an acid by irra› diation with active light or radiation is a compound  represented by the following General Formula (IIIB-2),  and  x+  represents an organic cation, and  Q$_{61 }$represents a group having an alicyclic group, a group  having a lactone structure, a group having a sultone  structure, or a group having a cyclic carbonate structure.  the pattern forming method according to claim  1.  the method for forming a patterned mask according to  claim  10.  (IIIB-2)  (IIIB-2)  F  fi  e IT  I  oYQb1  X  0-S~  II  F  0  0  F  fi  e IT  I  oYQb1  x  o-s~  II  F  0  0 