16  US 6,767,687 Bl  15  -continued  -continued  Said chemically amplified resist compos1t10n was spin  coated on silicone wafers at 2000 rpm and was heated to  100°  C. for 90 seconds to form thin layers with thicknesses’  as described in Table  1.  Micro-pattern masks were mounted  on said thin layers, mono wavelengths of 248 nm were  radiated, and said layers were heated to 110° C. for 90  seconds to cause the chemical amplification. Then, said  layers were developed with a tetramethylammoniumhydrox› ide aqueous solution for 60 seconds, and then were rinsed  with pure water and dried to embody micro-patterns on  wafers.  The relative sensitivities and resolutions of micro-patterns  are described in Table  1.  Chemically amplified resist compositions were prepared  by using polyhydroxystyrene blocked with t-BOC(tertiary› butoxy carbonyl) group represented by the formula 7 and  EVE (ethyl vinyl ether) represented by the formula 8 as  polymers, the compounds represented by the formulae 2-6  as  acid  producing  agents,  and  propyleneglycolmonomethyletheracetate(PGMEA) and  ethyllactate(EL) as solvents, in the ratios of Table  1.  Said  compositions were spin coated on silicone wafers and were  heated to form thin layers, and were chemically amplified to  embody micro-patterns, in the same manner as described in  the  The relative sensitivities and resolutions of the micro› patterns are described in Table 1  *The relative sensitivity in Table 1 means optimum energy (Eop ).  As  shown in Table 1, the resist compositions prepared in  Examples 1 to 7 of the present invention have resolutions of  0.16 to 0.20  µm  which is much excellent compared to the  resolutions of 0.24 to 0.30  µm  of the compositions prepared  in Comparative Examples  1 to 4. In addition, the relative  sensitivities of the compositions of Examples are 28 to 30  mj/cm 2 ,  which are excellent compared to the relative sen› sitivities of 35 to 45 mj/cm 2  of the compositions of Com› parative Examples.  The  com12osition of the resists  The  Acid  pro- ducing  12h:ysical 12ro12ert:y of 12attern  Thick- Example  1  Example  2  Example  3  Example  4  Example  5  Example  6  Example  7  Com- parative  Example 1  Com- parative  Example 2  Com- parative  Example 3  Com› parative  Example 4  Polymer agent  (weight (weight  part)  part)  Formula Formula  1 (100)  2 (5)  Formula Formula  1 (100)  3 (5)  Formula Formula  1 (100)  4 (2)  Formula  5 (2)  Formula Formula  1 (100)  2 (3)  Formula  5 (2)  Formula Formula  1 (100)  4 (3)  Formula  6 (2)  Formula Formula  1 (100)  2(3)  Formula  6 (2)  Formula Formula  1 (100)  3 (3)  Formula  6 (2)  Formula Formula  7 (30)  2 (5)  Formula Formula  7 (40)  3 (5)  Formula  8 (60)  Formula Formula  7 (100)  2 (3)  Formula  6 (2)  Formula Formula  7 (100)  3 (3)  Formula  5 (2)  ness  Solvent  of thin  Relative  (weight  layer  sensitivity  part)  (um)  (mj/cm 2 )  PGMEA  0.72  31  (550)  PGMEA  0.72  30  (550)  PGMEA  0.74  32  (550)  PGMEA  0.73  31  (250)  EL  (300)  PGMEA  0.72  27  (550)  PGMEA  0.71  28  (550)  PGMEA  0.71  33  (550)  PGMEA  0.73  35  (550)  PGMEA  0.73  38  (250)  EL  (300)  PGMEA  0.74  39  (550)  PGMEA  0.72  42  (550)  Res- olution  (um)  0.18  0.18  0.16  0.16  0.18  0.20  0.18  0.24  0.24  0.30  0.28  TABLE  1  OH  0  Ao~  8=<-o-1-0- [Formula 8]  [Formula 6]  Examples  1 to 7  [Formula 7]  COMPARATIVE EXAMPLES  1-4  0  ~N-0-1-0-cn  0  [Formula 5] 