Jul. 21, 2016  8  US 2016/0209749 Al  [0139]  After the step of developing using the developer  including an organic solvent, more preferably, a step of wash› ing using a rinse liquid containing at least one type of organic  solvent selected from a ketone-based solvent, an ester-based  solvent, an alcohol-based solvent, and an amide-based sol› vent is performed, still more preferably, a step of washing  using a rinse liquid containing an alcohol-based solvent or an  ester-based solvent is performed, particularly preferably, a  step of washing using a rinse liquid containing a monohydric  alcohol is performed, and most preferably, a step of washing  using a rinse liquid containing a monohydric alcohol having  5 or more carbon atoms is performed.  [0140]  As the monohydric alcohol used in the rinsing step,  a linear, branched, or cyclic monohydric alcohol is exempli› fied, and specifically, 1-butanol, 2-butanol, 3-methyl-1-bu› tanol, tert-butyl alcohol, 1-pentanol, 2-pentanol, 1-hexanol,  4-methyl-2-pentanol,  1-heptanol,  1-octanol,  2-hexanol,  cyclopentanol, 2-heptanol, 2-octanol, 3-hexanol, 3-heptanol,  3-octanol, or 4-octanol can be used, and as particularly pref› erable monohydric alcohol having 5 or more carbon atoms,  1-hexanol, 2-hexanol, 4-methyl-2-pentanol, 1-pentanol, or  3-methyl-1-butanol can be used.  [0141]  A plurality of the respective components described  above may be used in combination, or the respective compo› nents may be used in combination with an organic solvent  other than the organic solvents described above.  [0142]  The water content in the rinse liquid is preferably  10% by mass or less, more preferably 5% by mass or less, and  particularly preferably 3% by mass or less. When the water  content is 10% by mass or less, good development character› istics can be obtained.  [0143]  The vapor pressure of the rinse liquid used after the  step of developing using a developer including an organic  solvent is preferably 0.05 kPa to 5 kPa, more preferably 0.1  kPa to 5 kPa, and most preferably 0.12 kPa to 3 kPa, at 20°  C.  When the vapor pressure of the rinse liquid is 0.05 kPa to 5  kPa, the temperature evenness in the wafer surface is  improved, swelling due to penetration of the rinse liquid is  suppressed, and the dimensional evenness in the wafer sur› face is improved.  [0144]  A suitable amount of surfactant can also be added to  the rinse liquid for use.  [0145]  In the rinsing step, the wafer developed by using a  developer including an organic solvent is subjected to a wash› ing treatment using the rinse liquid including an organic  solvent described above. The method of washing treatment is  not particularly limited, and, for example, a method in which  a rinse liquid is discharged continuously onto a substrate  while the substrate is rotated at a constant rate (spin coating  method), a method in which a substrate is dipped in a bath  filled with a rinse liquid for a predetermined period of time  ( dipping method), or a method in which a rinse liquid is  sprayed onto a substrate surface (spray method) can be suit› ably used, and among these, it is preferable that a washing  treatment is performed by the spin coating method, and, after  washing, a rinse liquid is removed from the substrate by  rotating the substrate at a rotation speed of 2000 rpm to 4000  rpm. In addition, a heating step (post bake) is also preferably  included after the rinsing step. By baking, the developer and  the rinse liquid remaining between the patterns and in the  patterns are removed. The heating step after the rinsing step is  performed typically 40°  C. to 160°  C., and preferably 70°  C.  to 95°  C., and typically for 10 seconds to 3 minutes, and  preferably 30 seconds to 90 seconds.  [0146]  In addition, the present invention also relates to a  method for manufacturing an electronic device including the  pattern forming method and the method for forming a pat› terned mask of the present invention described above, and an  electronic device manufactured by the manufacturing  method.  [0147]  The electronic device of the present invention is  suitably mounted on electrical and electronic equipment  (home electric appliances, OA and media-related equipment,  optical equipment, communication equipment, or the like).  [0148]  Next, the active light-sensitive or radiation-sensitive  resin composition suitably used in the pattern forming  method and the method for forming a patterned mask of the  present invention will be described in detail.  [0149]  The active light-sensitive or radiation-sensitive  resin composition of the present invention contains (A) a  resin having a repeating unit having a group that generates a  polar group by being decomposed due to the action of an acid  and (B) a compound that generates an acid by irradiation with  active light or radiation.  [0150]  [(A) Resin Having Repeating Unit Group Having  Group that Generates Polar Group by being Decomposed  Due to Action of Acid]  [0151]  The active light-sensitive or radiation-sensitive  resin composition of the present invention contains a resin  having a repeating unit having a group that generates a polar  group by being decomposed due to the action of an acid  (hereinafter, also referred to as an "acid decomposable resin"  or a "resin (A)").  [0152]  The resin (A) is preferably insoluble or poorly  soluble in an alkali developer, and is soluble in a developer  including an organic solvent.  [0153]  The group that generates a polar group by being  decomposed due to the action of an acid (hereinafter, also  referred to as an "acid-decomposable group") preferably has  a structure in which the polar group is protected with a group  leaving by being decomposed due to the action of an acid.  [0154]  The resin (A) is also a resin of which the polarity is  changed due to the action of an acid, and specifically, is also  a resin of which the solubility in alkali developers is increased  due to the action of an acid, or of which the solubility in  developers containing an organic solvent is decreased.  [0155]  Examples of the polar group include a phenolic  hydroxyl group, a carboxyl group, a fluorinated alcohol  group, a sulfonic acid group, a sulfonamide group, a sulfonyl  imide group, an (alkylsulfonyl)(alkylcarbonyl)methylene  group, an (alkylsulfonyl)(alkylcarbonyl)imide group, a bis  (alkylcarbonyl)methylene group, a bis(alkylcarbonyl)imide  group, a bis(alkylsulfonyl)methylene group, a bis(alkylsulfo› nyl)imide group, a tris(alkylcarbonyl)methylene group, and a  tris(alkylsulfonyl)methylene group.  [0156]  Examples of a preferable polar group include a car› boxyl group, a fluorinated alcohol group (preferably, a  hexafluoroisopropanol group), and a sulfonic acid group.  [0157]  The preferable acid-decomposable group is a group  in which a hydrogen atom of the polar group thereof is sub› stituted with a group leaving due to an acid.  [0158]  Examples of the group leaving due to an acid  include ----C(R 36 )(R 37 )(R 38 ),  ----C(R 36 )(R 37 )(OR 39 ),  and  ----C(Ro1)(Ro2)(OR39)- [0159]  In the formula, each of R 36  to R 39  independently  represents an alkyl group, a cycloalkyl group, an aryl group,  an aralkyl group, or an alkenyl group. R 36  and R 37  may be  bonded to each other to form a ring. 