Thermal shot noise in top-gated single carbon nanotube field effect transistors J. Chaste, 1 E. Pallecchi, 1 P. Morfin, 1 G. F` eve, 1 T. Kontos, 1 J.-M. Berroir, 1 P. Hakonen, 2 and B. Pla¸cais 1,$_{∗}$ $^{1}$Laboratoire Pierre Aigrain, ENS-CNRS-UMR8551, 24 rue Lhomond, 75005 Paris, France 2 Low Temperature Laboratory, Aalto University, Puumiehenkuja 2 B, FI-00076 Aalto, Finland (Dated: November 21, 2018) The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a theory of 1-dimensional nano-transistor. In particular the prediction of a large transconductance correction to the Johnson-Nyquist thermal noise formula is confirmed experimentally. Experiment shows that nanotube transistors can be used as fast charge detectors for quantum coherent electronics with a resolution of 13 µ e $_{/}$√$_{Hz in}$ the 0 . 2–0 . 8 GHz band. PACS numbers: 73.63.Fg, 72.10.Di, 73.22.f ∗ Electronic address: Bernard.Placais@lpa.ens.fr 1 arXiv:1002.0706v2 [cond-mat.mes-hall] 12 May 2010 Abstract