Nov. 24,  2016  35  US 2016/0342090 Al  acid are preferred since these acids are less likely to vaporize  from the resist film surface to contaminate the inside of a  lithography chamber.  [0208]  The blending amount of the organic carboxylic  acid is preferably in the range of 0.01 parts by mass to 10  parts by mass, more preferably 0.01 parts by mass to 5 parts  by mass, and still more preferably 0.01 parts by mass to 3  parts by mass, based on 100 parts by mass of the polymer  compound (A).  [0209]  The composition of the present invention, as nec› essary, may further contain a dye, a plasticizer, a photo› decomposable base compound, a photobase generator, and  the like. Examples of these compounds include the com› pounds described in JP2002-6500A.  [0210]  Preferred examples of the organic solvent used for  the composition of the present invention include ethylene  glycol monoethyl ether acetate, cyclohexanone, 2-hep› tanone, propylene glycol monomethyl ether (PGME,  another name: l-methoxy-2-propanol), propylene glycol  monomethyl  ether  acetate  (PGMEA,  another name:  l-methoxy-2-acetoxypropane ), propylene glycol monom› ethyl ether propionate, propylene glycol monoethyl ether  acetate, methyl 3-methoxypropionate, ethyl 3-ethoxypropi› onate, methyl ~-methoxyisobutyrate, ethyl butyrate, propyl  butyrate, methyl isobutyl ketone, ethyl acetate, isoamyl  acetate, ethyl lactate, toluene, xylene, cyclohexyl acetate,  diacetone alcohol, N-methylpyrrolidone, N,N-dimethylfor› mamide, y-butyrolactone, N,N-dimethylacetamide, propyl› ene carbonate, and ethylene carbonate. These solvents may  be used alone or in combination thereof.  [0211]  The solid component of the composition of the  present invention is dissolved in the solvent, and is dissolved  at a solid content concentration preferably in the range of 1  mass % to 40 mass %, more preferably 1 mass % to 30 mass  %, and still more preferably 3 mass % to 20 mass %. With  a solid content concentration in this range, the above› described film thickness can be achieved.  [0212]  The present invention also relates to a resist film  formed by the composition of the present invention. Such a  resist film is formed, for example, by coating the composi› tion of the present invention having the solid content con› centration as described above on a support such as a sub› strate. The composition of the present invention is applied  on a substrate using an appropriate coating method such as  spin coating, roll coating, flow coating, dip coating, spray  coating, or doctor coating. The coating film is pre-baked at  60°  C. to 150°  C. for 1 minute to 20 minutes, and preferably  at 80°  C. to 120°  C. for 1 minute to 10 minutes to form a  resist film. The film thickness of the resist film formed is  preferably 10 nm to 200 nm, more preferably 10 nm to 150  nm, and still more preferably 20 nm to 150 nm.  [0213]  The substrate suitable for the present invention is a  silicon substrate or a substrate having provided thereon a  metal deposited film or a metal-containing film, and a  substrate having provided on the surface thereof a deposited  film by Cr, Mo Si, TaSi, or an oxide or nitride thereof is more  suited.  [0214]  The present invention also relates to a resist-coated  mask blank coated with the thus-obtained resist film. In  order to obtain such a resist-coated mask blank, in the case  of forming a resist pattern on a photomask blank for the  production of a photomask, the transparent substrate to be  used is a transparent substrate such as quartz and calcium  fluoride. In general, a light-shielding film, an antireflection  [0221]  In the production or the like of a precision inte› grated circuit element, at the exposure on the resist film (a  pattern forming step), first, it is preferred to perform pat› ternwise irradiation of an electron beam or extreme ultra› violet (EUV) light on the resist film of the present invention.  The exposure is carried out at an exposure dose ranging from  [0220]  Further, the present invention also relates to a  photomask obtained by exposing and developing the resist› coated mask blank.  [0219]  The present invention also relates to a resist pattern  forming method including exposing the above-described  resist film or resist-coated mask blank and developing the  exposed resist film or resist-coated mask blank. In the  present invention, the exposure is preferably performed  using an electron beam or extreme-ultraviolet rays.  [0218]  Meanwhile, the process for preparing an imprint  mold by using the composition of the present invention is  described, for example, in JP4109085B, and JP2008- 162101A.  [0217]  Subsequently, this resist film is irradiated with  actinic rays or radiation (for example, electron beam), then  preferably baked (usually at 80° C. to 150° C., more  preferably 90°  C. to 130°  C.), and subsequently developed.  In this manner, a good pattern may be obtained. Etching, ion  implantation, or the like is appropriately performed by using  this pattern as the mask to produce, for example, a semi› conductor fine circuit or an imprint mold structure.  [0216]  In the case where the pattern formation is carried  out using an actinic ray-sensitive or radiation-sensitive resin  composition on the photomask blank having the material  containing chromium and oxygen or nitrogen in the outer› most layer thereof among the materials described above, a  so-called undercut shape having a waisted shape near the  substrate is likely to be formed in general. However, in the  case of using the composition of the present invention, the  undercut problem may be improved as compared with the  conventional composition.  [0215]  The light-shielding film may have a single-layer  structure but more preferably has a multilayer structure  where a plurality of materials are applied one on another. In  the case of a multilayer structure, the film thickness per layer  is not particularly limited but is preferably 5 nm to 100 nm,  and more preferably 10 nm to 80 nm. The thickness of the  entire light-shielding film is not particularly limited but is  preferably 5 nm to 200 nm, and more preferably 10 nm to  150 nm  film, further a phase shift film, and additionally a required  functional film such as etching stopper film and etching  mask film are stacked on the substrate. As for the material  of the functional film, a film containing silicon or a transition  metal such as chromium, molybdenum, zirconium, tanta› lum, tungsten, titanium, and niobium is stacked. Examples  of the material used for the outermost layer include a silicon  compound material where the main constituent material is a  material containing silicon or containing silicon and oxygen  and/or nitrogen, a silicon compound material where the  main constituent material is the material above which further  contains a transition metal, and a transition metal compound  material where the main constituent material is a material  containing a transition metal, particularly, one or more  transition metals selected from chromium, molybdenum,  zirconium, tantalum, tungsten, titanium, and niobium, or  further containing one or more elements selected from  oxygen, nitrogen, and carbon. 