1111111111111111 IIIIII IIIII 1111111111 11111 lllll lllll lllll lllll lllll 111111111111111 11111111  US 20200241417Al  c19)  United States  c12)  Patent Application Publication  Hatakeyama et al.  c10)  Pub. No.: US 2020/0241417 Al  (43)  Pub. Date:  Jul. 30, 2020  (54)  RESIST COMPOSITION AND PATTERNING  PROCESS  (71)  Applicant:  Shin-Etsu Chemical Co., Ltd.,  Tokyo  (JP)  (72)  Inventors:  Jun Hatakeyama,  Joetsu-shi (JP);  Takayuki Fujiwara,  Joetsu-shi (JP);  Masaki Ohashi,  Joetsu-shi (JP)  (73)  Assignee:  Shin-Etsu Chemical Co., Ltd.,  Tokyo  (JP)  (21)  Appl. No.:  16/729,643  (22)  Filed:  Dec. 30, 2019  (30)  Foreign Application Priority Data  Jan. 25, 2019  (JP) ................................. 2019-010892  A  resist composition comprising a base polymer and a  quencher in the form of an amine compound having an  iodized aromatic ring and a tertiary ester structure offers a  high sensitivity and minimal LWR or improved  CDU,  independent of whether it is of positive or negative tone.  (57)  ABSTRACT  (52)  U.S. Cl.  CPC ..........  G03F 710392  (2013.01);  G03F 710382  (2013.01);  G03F 710045  (2013.01);  G03F  7/162  (2013.01);  C08F 220/1802  (2020.02);  C08F 212124  (2020.02);  C08F 220/1805  (2020.02)  Publication Classification  G03F  71039  G03F  71038  G03F  71004  C08F 220118  C08F 212114  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (51)  Int. Cl. 