c12)  United States Patent  Fukasawa et al.  (IO)  Patent No.:  US 8,900,335 B2  Dec. 2, 2014  (45)  Date of Patent:  (54)  CMP POLISHING SLURRY AND METHOD OF  POLISHING SUBSTRATE  (75)  Inventors:  Masato Fukasawa,  Hitachi (JP);  Naoyuki Koyama,  Hitachi (JP);  Kouji  Haga,  Hitachi (JP);  Toshiaki Akutsu,  Hitachi (JP)  (73)  Assignee:  Hitachi Chemical Company, Ltd.,  Tokyo (JP)  ( *)  Notice:  Subject to any disclaimer, the term of this  patent is extended or adjusted under 35  U.S.C. 154(b) by 212 days.  (21)  Appl. No.:  12/768,082  (22)  Filed:  Apr. 27, 2010  (62)  Division of application No. 11/576,014, filed as  application No. PCT/JP2005/017764 on Sep. 27,  2005, now abandoned.  (51)  Int. Cl.  (52)  U.S. Cl.  CPC ................  C09K 3/1463  (2013.01);  C09G 1102  (2013.01)  USPC .............................................  51/307;  438/692  ( 58)  Field of Classification Search  USPC ......................................................... 252/79.1  See application file for complete search history.  FOREIGN PATENT DOCUMENTS  OTHER PUBLICATIONS  (57)  ABSTRACT  8 Claims, No Drawings  (65)  Prior Publication Data  (30)  Foreign Application Priority Data  (56)  References Cited  U.S. PATENT DOCUMENTS  6,221,118 Bl*  4/2001 Yoshida et al. ................. 51/309  6,420,269 B2 *  7/2002 Matsuzawa et al. ............ 51/307  6,454,819 Bl*  9/2002 Yano et al. ...................... 51/298  6,783,434 Bl *  8/2004 Akahori et al. ................. 451/41  6,821,897 B2 *  11/2004 Schroeder et al.  257 /E21.304  6,863,700 B2 *  3/2005 Yoshida et al. ................. 51/309  7,410,409 Bl  8/2008 Koyama et al.  2002/0016060 Al *  2/2002 Matsuzawa et al. .......... 438/633  2002/0069593  Al*  6/2002 Yoshida et al. ................. 51/309  2004/0147206 Al*  7/2004 Akahori et al. ................. 451/41  2005/0064318 Al*  3/2005 Shida et al . ................... 430/126  2005/0085168 Al*  4/2005 Yoshida et al. ................. 51/309  2005/0104048 Al*  5/2005 Thomas et al. ............... 252/515  2005/0136671  Al*  6/2005 Goldberg et al. ............. 438/691  2005/0189322 Al*  9/2005 Lane et al. ................... 252/79.1  2005/0208882 Al*  9/2005 Cho et al. ........................ 451/41  2006/0021972 Al *  2/2006 Lane et al. ................... 252/79.1  2006/0111024 Al *  5/2006 Wang .............................. 451/41  2006/0148667 Al  7/2006 Fukasawa et al.  2006/0283092 Al *  12/2006 Chinone ......................... 51/307  2007/0169421 Al  7/2007 Koyama et al.  2008/0214093 Al  9/2008 Fukasawa et al.  B24D3/02  C09C 1168  C09K 3/14  C09Gl/02  (2006.01)  (2006.01)  (2006.01)  (2006.01)  Related U.S. Application Data  JP  JP  JP  JP  JP  JP  JP  JP  JP  JP  KR  KR  WO  WO  WO  10-106994 A  4/1998  11-293231 A  10/1999  2000-313815 A  11/2000  2001-107089 A  4/2001  2001-358100 A  12/2001  3278532 B2  4/2002  2003-347247  A  12/2003  2003-347248  A  12/2003  2004335689  A  * 11/2004  .............. B24B 37/00  2005167016 A  *  6/2005  .............. B24B 37/00  2002-0015697  A  10/2002  2005029605  A  *  3/2005  C09K 3/14  00/79577 Al  12/2000  2004068570 Al  8/2004  WO 2004068570 Al *  8/2004  ................ B24B 1/00  A CMP polishing slurry of the present invention contains  cerium oxide particles, water, and a polymer of at least one of  a methacrylic acid and the salt thereof, and/or a polymer of at  least one of a methacrylic acid and the salt thereof and a  monomer having an unsaturated double bond, preferably con› tains furthermore a dispersant or a polymer of monomers  containing at least one of an acrylic acid and the salt thereof.  The present invention provides a CMP polishing slurry and a  polishing method that, after polishing, give a polished film  having a smaller difference in residual film thickness due to a  pattern density difference.  * cited by examiner  Primary Examiner  - Kaj K Olsen  Assistant Examiner  - Ross J Christie  (74)  Attorney,  Agent,  or Firm  - Westerman,  Hattori,  Daniels & Adrian, LLP  Wako Specialty Chemicals, "V-50", http://www.wako-chem.co.jp/  specialty/waterazoN-50.htm. *  Japanese Office Action dated Jul. 14, 2009 ( dispatch date), issued in  corresponding Japanese Patent Application No. 2006-523471.  T.  Honma et al, "Effect of various Factors on Grinding Using Jet  Mill", Chemical Engineering Paper Collection, vol. 6, No. 5, 1980,  pp. 527-532. English Abstract.  International Search Report of PCT/JP2005/017764, mailing date of  Nov. 8, 2005.  Korean Office Action dated Feb. 29, 2008, issued in corresponding  Korean Patent Application No. 10-2007-7005762.  Taiwanese Office Action dated May 22, 2008, issued in correspond› ing Taiwanese Patent Application No. 09720260260.  English Translation of Chemical Handbook (Basic) Revised Ed., 4th,  Sep. 30, 1993, pp. II-317-II-322, Chemical Society of Japan Ed,  Maruzen Co., Ltd.  Japanese Office Action dated Dec. 15, 2009, issued in corresponding  Patent Application 2006-523471.  Japanese Office Action dated Jan. 5, 2010 (mailing date), issued in  corresponding Japanese Patent Application No. 2006-523471.  Japanese Office Action dated Feb. 22, 2011, issued in corresponding  Japanese Patent Application No. 2006-523471.  Chinese Office Action dated Apr. 13, 2010, issued in corresponding  Chinese Patent Application No. 2008101461550.  US 2010/0210109 Al  Aug. 19, 2010  Sep.28,2004  (JP) ................................. 2004-281508  US008900335B2 