-continued  Chemical Formula 11  Chemical Formula 12  Chemical Formula 13  Apr. 16, 2020  14  US 2020/0117085 Al  13.  A method of forming patterns, the method comprising:  coating the semiconductor resist composition of claim  1  on an etching subject layer to form a photoresist layer;  patterning the photoresist layer to form a photoresist  pattern; and  etching the etching subject layer using the photoresist  pattern as an etching mask.  14.  The method of claim  13,  wherein the photoresist  pattern is formed using light in a wavelength of about 5 nm  to about 150 nm.  15.  The method of claim  13,  wherein the etching subject  layer is provided on a substrate.  16.  The method of claim  15,  further comprising providing  a resist underlayer between the substrate and the photoresist  layer.  17.  The method of claim  13,  further comprising:  drying the coated semiconductor resist composition at  about 80°  C. to about 120°  C., and  curing the patterned photoresist layer at 90°  C. to about  200°  C.  18.  The method of claim  13,  wherein the photoresist  pattern has a width of about 5 nm to about 100 nm.  19.  The method of claim  13,  wherein the photoresist  pattern is formed using an extreme ultraviolet (EUV) light  source of a wavelength of about 13.5 nm.  20.  A system of forming patterns, the system comprising:  means for coating the semiconductor resist composition  of claim  1  on an etching subject layer to form a  photoresist layer;  means for patterning the photoresist layer to form a  photoresist pattern; and  means for etching the etching subject layer using the  photoresist pattern as an etching mask.  *  *  *  *  * 