Jan. 13, 2011  94  US 2011/0008728 Al  [1189]  <Evaluation of Lithography Properties (l)>  [1190]  [Resolution and Sensitivity]  [1191]  An organic anti-reflection film composition (prod› uct name: ARC95, manufactured by Brewer Science Ltd.)  was applied to an 12-inch silicon wafer using a spinner, and  the composition was then baked at 205°  C. for 90 seconds,  thereby forming an organic anti-reflection film having a film  thickness of 90 nm.  [1192]  Then, each positive resist composition obtained in  Examples 1 to 3 and Comparative Examples 1 to 4 was  applied onto the anti-reflection film using a spinner, and was  then prebaked (PAB) on a hotplate at a temperature indicated  in Table 3 for 60 seconds and dried, thereby forming a resist  film having a film thickness of 80 nm.  [1193]  Subsequently, a coating solution for forming a pro› tection film (product name: TILC-057; manufactured by  Tokyo Ohka Kogyo Co., Ltd.) was applied to the resist film  using a spinner, and then heated at 90°  C. for 60 seconds,  thereby forming a top coat with a film thickness of 35 nm.  [1194]  Subsequently, the resist film was selectively irradi› ated with an ArF excimer laser (193 nm) through a mask,  using an ArF immersion exposure apparatus NSR-S609B  (manufactured by Nikon Corporation, NA (numerical aper› ture )=1.07, Dipole 0.78/0.97).  [1195]  Next, a post exposure bake (PEB) treatment was  conducted at a temperature indicated in Table 3 for 60 sec› onds, followed by alkali development for 10 seconds at 23 °  C.  in a 2.38% by weight aqueous TMAH solution (product  name: NMD-3; manufactured by Tokyo Ohka Kogyo Co.,  Ltd.). Then, the resist was washed for 25 seconds with pure  water, followed by drying by shaking. Finally, a bake treat› ment (post bake) was conducted at 100°  C. for 45 seconds.  [1196]  As a result, in each of the examples, a line and space  pattern (hereafter, referred to as "LS pattern") having a line  width of 50 nm and a pitch of 100 nm was formed.  [1197]  The optimum exposure dose (Eop mJ/cm 2 )  with  which the pattern was formed, i.e., sensitivity, was deter› mined. The results are shown in Table 3.  [1198]  [Evaluation of Line Width Roughness (LWR)]  [1199]  With respect to each of the LS patterns formed with  the above Eop and having a line width of 50 nm and a pitch of  100 nm, the line width at 400 points in the lengthwise direc› tion of the line were measured using a measuring scanning  electron microscope (SEM) (product name: S-9220, manu› factured by Hitachi, Ltd.; acceleration voltage:  SOOY). From  the results, the value of3 times the standard deviations (i.e.,  3s) was determined, and the average of the 3s values at 5  points was calculated as a yardstick of LWR. The results are  shown in Table 3.  [1200]  The smaller this 3s value is, the lower the level of  roughness of the line width, indicating that a LS pattern with  a uniform width was obtained.  [1201]  [Evaluation of Line Edge Roughness (LER)]  [1202]  The LER of the LS pattern having a line width of 50  nm and a pitch of 100 nm was determined.  [1203]  Specifically, using a measuring scanning electron  microscope (SEM) (product name: S-9360, manufactured by  Hitachi, Ltd.; measurement voltage: 300V), deviation from  the average line of the line edge in each resist pattern was  measured at 400 points. From the results, the value of3 times  the standard deviation s (i.e., 3s) was determined, and the  average of the 3s values at 5 points was calculated as a  yardstick ofLER. The results are shown in Table 3.  [1204]  The smaller the determined value is, the lower the  level of roughness of the line width, indicating that a LS  pattern with a uniform width was obtained.  [1205]  [Evaluation of Resist Pattern Shape]  [1206]  With respect to each LS pattern having a line width  of 50 nm and a pitch of 100 nm, the cross-sectional shape of  the resist pattern was observed using a scanning electron  microscope (product name: S-4700, manufactured by Hita› chi, Ltd.) The results are shown in Table 3.  TABLE3  [1207]  From the results shown in Table 3, it was confirmed  that the resist compositions of Examples 1 to 3 according to  the present invention exhibited excellent properties with  respect to LWR, LER and resist pattern shape, as compared to  the resist compositions of Comparative Examples 1 to 4.  [1208]  The components shown in Table 4 were mixed  together and dissolved to obtain positive resist compositions.  [1209]  In Table 4, the reference characters indicate the fol› lowing. Further, in Table 4, the values in brackets [ ] indicate  the amount (in terms of parts by weight) of the component  added.  Production of Resist Composition (2)  Example 4, Comparative Example 5  TABLE4  PAB  PEB  Eop  LWR  LER Resist pattern  ("C.)  (" c.)  (mJ/cm 2 )  (nm)  (nm) shape  Comp. Ex. 1  120  90  22.7  5.87  3.72 Slight footing  Comp. Ex. 2  130  90  19.9  5.04  3.42 Slight footing  Comp. Ex. 3  130  90  15.4  5.44  4.48 Slight footing  Ex. 1  130  90  12.0  4.84  3.98 Perpendicular  Comp. Ex. 4  130  90  19.8  5.04  4.08 Slight footing  Ex.2  130  90  15.5  4.74  3.05 Perpendicular  Ex. 3  130  90  22.4  4.33  2.94 Perpendicular  Component  (A)  First resist  (A)-3  composition (a)  [100]  First resist  (A)-3  composition (b)  [100]  Second  Comp. Ex. 5  (A)-4  resist  [100]  composition  Ex. 4  (A)-4  [100]  Component  Component  Component  Component  Component (B)  (D)  (E)  (F)  (S)  (B)-6  (D)-1  (E)-1  (S)-3  [8.0]  [0.40]  [0.22]  [3000]  (B)-7  (B)-8  (D)-1  (E)-1  (S)-3  [10.0]  [1.0]  [1.0]  [1.82]  [3000]  (B)-1  (D)-1  (E)-1  (F)-1  (S)-1  [15.0]  [1.60]  [3.00]  [5.0]  [2400]  (B)-1  (B)-9  (D)-1  (E)-1  (F)-1  (S)-1  [5.0]  [10.5]  [1.60]  [3.00]  [5.0]  [2400]  (A)-3:  a  copolymer represented by chemical formula (Al ’-11-1) shown below withMw = 7,000 and Mwl1v1n = 1. 7. In the formula, the subscript numerals  shown to the bottom right of the parentheses () indicate the percentage (mo1%) of the respective structural units within the copolymer.  [Chemical Formula 121] 