198  197  US 9,170,489 B2  (6) Evaluation of Resist Pattern  sigma 0.68, inner sigma 0.36, manufactured by Exitech)  through an exposure mask (line/space:  1/1  ).  After irradiation,  the wafer is heated at  110°  C. for 60 seconds on a hot plate.  After that, the wafer is puddled with the organic developer  shown in the following table and developed for 30 seconds,  and then rinsed by using the rinsing solution shown in the  table below. Subsequently, the wafer is revolved at  4,000  rpm  for 30 seconds and then heated at 90°  C. for 60 seconds, to  thereby obtain a resist pattern ofline and space pattern of  1/1  having a line width of 50 nm.  Sensitivity, resolution and LWR of the obtained resist pat- tern are evaluated with a scanning electron microscope  (S-9380II, manufactured by Hitachi Limited) by the follow- ing methods. The results obtained are shown in the table  below.  ( 6-1) Sensitivity  Energy of irradiation at the time of resolving a  1/1  line and  space pattern having a line width of 50 nm is taken as sensi- tivity (Eop ). The smaller the value, the better is the perfor- mance.  (6-2) Resolution  In the above Eop, the smallest line width of the separated  1/1  line and space pattern is taken as resolution. The smaller  the value, the better is the performance.  An electron beam-sensitive or extreme ultraviolet radia- tion-sensitive resin composition is prepared and a pattern is  formed in the same manner as in Example  101  except that the  constitution is changed as shown in the table below, and  development is performed with an alkali aqueous solution  (TMAH, a 2.38% by mass tetramethyammonium hydroxide  aqueous solution) in place of the organic developer and water  is used as the rinsing solution.  (6-3) Line Width Roughness (LWR)  Concerning line width roughness, in the above Eop, line  width is measured at arbitrary 50 points of 0.5 µm in the  longitudinal direction of a line and space pattern having a line  width of 50 nm and standard deviation is obtained, from  which  3a  is computed. The smaller the value, the better is the  performance.  TABLE2  Extreme Ultraviolet Radiation (EUV) Exposure  Comparative Examples 105 and 106  EUVEx osure  Acid  Solvent  Resin  Generator  (mass ratio)  Basic  Surfactant Developer  Rinsing  Sensitivity  Resolution  LWR  Example No. (A)  (B)  (40 g)  Compound  (5mg)  (mass ratio)  Solution  (mJ/cm 2 )  (nm)  (nm)  Example 101  Al-1-1  z45  S-1/S-2  D-3  W-1  S-5  S-8  3.9  25.5  5.7  (0.679 g)  (0.310 g)  (80/20)  (6mg)  Example 102  Al-1-2  z45  S-1/S-2  D-3  W-1  S-5  S-8  3.8  24.5  5.4  (0.679 g)  (0.310 g)  (80/20)  (6mg)  Example 103  Al-2  z117  S-1  D-1  Nothing  S-5  S-8  3.7  24.0  5.3  (0.685 g)  (0.310 g)  (5mg)  Example 104  Al-3  z119  S-1/S-2  D-1  W-2  S-5  S-10  3.9  24.5  5.5  (0.737 g)  (0.250 g)  (40/60)  (8mg)  Example 105  Al-4  z120  S-1  D-4  W-3  S-5  S-12  3.8  25.0  5.5  (0.780 g)  (0.210 g)  (5mg)  Example 106  Al-5  z114  S-1/S-2  D-3  W-1  S-5  S-8  3.7  24.0  5.3  (0.781 g)  (0.210 g)  (80/20)  (4mg)  Example 107  Al-5  z114  S-1/S-2  D-3  W-1  S-5  S-8  3.5  23.0  4.9  (0.681 g)  (0.310 g)  (80/20)  (4mg)  Example 108  Al-5  z114  S-1/S-2  D-3  W-1  S-5  S-8  3.3  22.5  4.5  (0.591 g)  (0.400 g)  (80/20)  (4mg)  Example 109  Al-5  z114  S-1/S-2  D-3  W-1  S-5  S-8  3.2  22.5  4.3  (0.491 g)  (0.500 g)  (80/20)  (4mg)  Example 110  Al-6  z115  S-1/S-4  D-1  W-4  S-7  S-9  3.2  22.0  4.2  (0.592 g)  (0.400 g)  (80/20)  (3mg)  Example 111  Al-7  z69  S-3  D-1  W-2  S-5/S-6  S-11  3.3  22.0  4.2  (0.583 g)  (0.310 g)  (2mg)  (80/20)  Al-5  (0.100 g)  Example 112  Al-8  z116  S-1  D-3  W-1  S-13  S-10  3.3  22.5  4.3  (0.590 g)  (0.300 g)  (5mg)  z115  (0.100 g)  Example 113  Al-9  z18  S-1/S-2  D-4  W-2  S-14  S-8  3.4  22.0  4.1  (0.743 g)  (0.250 g)  (70/30)  (2mg)  Example 114  Al-10  z108  S-1/S-2  D-3  W-1  S-5  S-8  3.9  25.0  5.4  (0.782 g)  (0.210 g)  (60/40)  (3mg)  Example 115  Al-10  z108  S-1/S-2  D-3  W-1  S-5  S-8  3.6  24.0  5.0  (0.682 g)  (0.310 g)  (60/40)  (3mg)  Example 116  Al-10  z108  S-1/S-2  D-3  W-1  S-5  S-8  3.4  23.5  4.6  (0.592 g)  (0.400 g)  (60/40)  (3mg)  Example 117  Al-10  z108  S-1/S-2  D-3  W-1  S-5  S-8  3.3  24.0  4.5  (0.392 g)  (0.600 g)  (60/40)  (3mg)  Example 118  Al-11  z45  S-1  D-2  W-3  S-6  S-12  3.5  23.0  4.3  (0.679 g)  (0.310 g)  (6mg)  Example 119  Al-12  z45  S-1/S-4  D-1  W-4  S-5  S-8  3.5  23.0  4.0  (0.642 g)  (0.350 g)  (80/20)  (3mg)  Example 120  Al-13  z39  S-1/S-4  D-3  Nothing  S-5  S-11  3.8  23.5  4.2  (0.745 g)  (0.250 g)  (70/30)  (5mg) 