171  US 9,904,167 B2  172  S2: Propylene glycol monomethyl ether (1-methoxy-2- propanol)  S3: 2-heptanone  S4: Ethyl lactate  S5: Cyclohexanone  S6: y-butyrolactone  S7: Propylene carbonate  (Resist Evaluation)  The prepared negative type resist solution was evenly  coated on a silicon substrate subjected to a hexamethyldisi- lazane treatment using a spin coater, and a resist film having  a film thickness of 50 nm was formed by heating and drying  on a hot plate for 60 seconds at lOO*C.  TABLE 8  (Electron beam exposure; negative  type)  LS  IS  Resolving Resolving  Sensitivity  Power  Power  LER  Example  Composition  (µC/cm 2 )  (nm)  (nm)  P attem Forming  (nm)  1E  Nl  10.2  22  25  Rectangle  3.5  2E  N2  10.0  22  25  Rectangle  3.5  3E  N3  10.2  20  25  Rectangle  3.8  4E  N4  10.2  22  25  Rectangle  3.5  5E  NS  11.3  22  25  Rectangle  3.5  6E  N6  10.3  22  25  Rectangle  3.5  7E  N7  10.0  20  25  Rectangle  3.8  SE  NS  10.2  22  25  Rectangle  3.5  9E  N9  10.2  20  25  Rectangle  3.8  !OE  NlO  10.2  20  25  Rectangle  3.8  llE  Nll  10.3  22  25  Rectangle  3.5  12E  N12  10.2  20  25  Rectangle  3.8  13E  N13  10.3  20  25  Rectangle  3.8  14E  N14  11.3  20  25  Rectangle  3.8  15E  N15  10.3  20  25  Rectangle  3.8  16E  N16  10.2  22  25  Rectangle  3.5  17E  N17  10.3  22  25  Rectangle  3.5  18E  N18  10.5  22  25  Rectangle  3.5  19E  N19  10.2  22  25  Rectangle  3.5  20E  N20  10.2  22  25  Rectangle  3.5  21E  N21  10.3  22  25  Rectangle  3.5  22E  N22  10.2  20  25  Rectangle  3.8  23E  N23  10.4  22  25  Rectangle  3.5  24E  N24  10.3  20  25  Rectangle  3.8  25E  N25  10.3  20  25  Rectangle  3.8  26E  N26  10.2  20  25  Rectangle  3.8  27E  N27  10.0  20  25  Rectangle  3.8  Comparative Comparative  11.8  35  40  Reverse taper  4.5  Example lE Composition Nl  Comparative Comparative  11.9  35  40  Reverse taper  4.5  Example 2E Composition N2  Comparative Comparative  11.8  35  40  Slightly reverse taper  4.5  Example 3E Composition N3  Comparative Comparative  11.5  35  40  Slightly reverse taper  4.5  Example 4E Composition N4  From the results shown in Table 8, it is understood that the  composition according to the present invention is excellent  in sensitivity, resolving power, pattern shape, and LER  performance. In addition, it is understood that Examples IE,  2E, 4E to 6E, SE, llE, 16E to 21E, and 23E which used a  compound where X$_{1 }$ or X$_{2 }$ was a group represented by  -S- in General Formula  (I)  or (II) are particularly excel› lent in the LER performance, while Examples 3E, 7E, 9E,  !OE, 12E to 15E, 22E, 24E to 27E which used a compound  where X$_{1 }$ or X$_{2 }$ was a group represented by -NH- or  -NR 1 - in General Formula  (I)  or (II) are particularly  excellent in resolving power.  A negative type resist solution was prepared by filtering  the negative type resist composition shown in Table 7 above  through a polytetrafluoroethylene filter having a pore size of  0.04 µm.  The sensitivity, the resolving power, the pattern shape,  and the line edge roughness (LER) of the obtained resist film  were evaluated using the following methods.  After performing exposure on the obtained resist film via  a reflective-type mask with a 1: 1 line and space pattern with  a line width of 50 nm while changing the exposure amount  by 0.1 mJ/cm 2  at a time in a range of O mJ/cm 2  to 20.0  mJ/cm 2  using EUV light (wavelength 13 nm), baking was  carried out for 90 seconds at 110°  C. Thereafter, develop› ment was carried out by using a 2.38 mass  % tetramethyl  ammonium hydroxide (TMAH) aqueous solution.  The exposure amount for reproducing a 1: 1 line and space  mask pattern with a line width of 50 nm was set as the  sensitivity. The smaller this value is, the higher the sensi› tivity.  The limit resolving power (the minimum line width at  which the lines and spaces are separately resolved) in the  exposure amount indicating the sensitivity described above  was set as the LS resolving power (nm).  Example IF-SF and Comparative Examples 1F-4F  (Preparation of Resist Solution)  [Sensitivity]  [LS Resolving Power] 