us 10,394,127 B2  110  109  TABLE 2-continued  Resin (Al  Acid generator  Basic com12ound  Surfactant  Solvent  Parts  Parts  Parts  Parts  Parts  Compound  by  Compound  by  Compound  by  Compound  by Compound  by  Nos.  mass Nos.  mass Nos.  mass  Nos.  mass Nos.  mass  Developer Rinsing  Example  11 A-2  39  B-1  10  C-5  Example  12 A-1  39  B-2  10  C-1  Example  13 A-12  41  B-3  8  C-5  Example  14 A-9  41  B-5  8  C-5  Example  15 A-1  42  B-7  7  C-3  Example  16 A-4  38  B-1  11  C-3  Example  17 A-10  43  B-8  6  C-5  Example  18 A-5  39  B-4  10  C-6  Example  19 A-4  41  B-9  8  C-1  Example  20 A-6  41  B-3  8  C-1  Example  21 A-1/A-2  40  B-1  9  C-1  Example  22 A-2  39  B-1/B-2  5/5  C-1  Example  23 A-13  39  B-1  10  C-1  Example  24 A-14  41  B-1  8  C-1  Example  25 A-15  43  B-2  6  C-3  Example  26 A-16  42  B-2  7  C-2  Example  27 A-17  41  B-2  8  C-2  Com- 1 A-18  42  B-1  7  C-1  parative  Example  Com- 2 A-18  42  B-1  7  C-1  parative  Example  SL-1/SL-4  2,100/350 DR-1  DR-5  SL-1/SL-3  2,000/450 DR-1  DR-5  W4  SL-1/SL-2  2,200/250 DR-1  DR-5  SL-1/SL-2  2,200/250 DR-1  DR-5  SL-1/SL-4  2,100/350 DR-1  DR-5  W3  SL-1/SL-7  2,000/450 DR-1  DR-5  SL-1/SL-4  2,100/350 DR-1  DR-5  SL-1/SL-2  2,200/250 DR-1  DR-5  SL-1/SL-7  2,000/450 DR-1  DR-5  W5  SL-1/SL-3  2,000/450 DR-1  DR-5  SL-1/SL-2  2,200/250 DR-1  DR-5  SL-1/SL-2  2,200/250 DR-1  DR-5  SL-1/SL-2  2,200/250 DR-1  DR-5  SL-1/SL-2  2,200/250 DR-1  DR-5  SL-1/SL-2  2,200/250 DR-1  DR-5  SL-1/SL-2  2,200/250 DR-1  DR-5  SL-1/SL-2  2,200/250 DR-1  DR-5  SL-1/SL-2  2,200/250 DR-1  DR-5  SL-1/SL-2  2,200/250 DR-4  DR-8  Develo12er  Rinsing  Compound  Compound  Nos.  Ratio Nos.  Ratio  Example  28  DR-1/DR-2  50/50  DR-5  100  Example  29  DR-1/DR-2  75/25  DR-5  100  Example  30  DR-2  100  DR-6  100  Example  31  DR-3  100  DR-5/DR-7  90/10  Example  32  DR-1/DR-3  75/25  DR-5/DR-1  90/10  Example  33  DR-1/DR-5  75/25  DR-5/DR-1  80/20  Example  34  DR-1/DR-5  90/10  DR-5/DR-1  70/30  Example  35  DR-1  100  DR-5/DR-6  50/50  Line-and-space performance  PEB Shrinkage  evaluation results  performance evaluation  LS Resolving power  LWR  results  Example 1  17  3.1  A  Example 2  16  2.9  A  Example 3  17  3.3  A  Example 4  16  3.0  A  Example 5  16  2.8  A  Example 6  18  3.4  A  Example 7  18  3.6  B  Example 8  20  3.7  B  Example 9  18  3.6  A  Example 10  18  3.0  A  Example 11  18  2.8  A  Example 12  17  3.1  B  Example 13  17  3.1  B  Example 14  20  3.7  B  Example 15  17  3.3  A  Example 16  18  3.5  A  Example 17  17  3.4  B  Example 18  18  3.4  A  Example 19  18  3.3  A  Example 20  18  3.3  B  Example 21  18  3.3  A  TABLE 4  TABLE 3  For the resist described in Example 1, pattern formation  was carried out by adjusting the developer and the rinsing  liquid.  [Evaluation of Resist Pattem/EUV]  Performance evaluation of the resist pattern was carried  out using a scanning electron microscope (S-9380II manu› factured by Hitachi, Ltd.).  <Resolving Power (LS)>  An optimum exposure dose at which the resolution of the  resist pattern having a line width of 50 nm (line:space=l:1)  was resolved was taken as sensitivity (Eopt) (mJ/cm 2 ).  A  critical resolving power at the determined optimum expo- sure dose (Eopt) (the minimum line width with which the  line and the space (line:space=l:1) are separated and  resolved) was taken as an LS resolving power (nm). As the  value is smaller, the resolving power is excellent, which is  thus favorable.  <Line Width Roughness (LWR)>  With regard to the line width roughness, in the Eopt, line  widths at arbitrary 50 points having a size of 0.5 µm  in the  longitudinal direction of a line-and-space pattern (line:  space= 1: 1) having a line width of 20 nm were measured, and  the standard deviation thereof was determined to calculate  3a  (nm). A smaller value indicates better performance.  PEB Shrinkage (%)~100-[(Film thickness upon  unexposure-Film thickness after PEB)/Film  thickness upon unexposure ]x 100  With regard to the PEB shrinkage, electron beams were  irradiated at an irradiation dose of 2.0 times the irradiation  dose for providing sensitivity above, the film thickness was  measured after exposure and before post-baking, and the  change rate from the film thickness upon unexposure was  determined. A case where the change rate is 100% or less  and 80% or more is denoted as A, a case where the change  rate is less than 80% and 70% or more is denoted as B, a case  where the change rate is less than 70% and 60% or more is  denoted as C, and a case where the change rate is less than  60% is defined as D.  <PEB Shrinkage> 