80  79  US 9,513,547  B2  L’ represents a single bond or an (n’+l) valent linking  group,  Y’ represents an alicyclic group, and  n’ represents an integer of 1 or more.  2.  The pattern forming method according to claim  1,  wherein the exposing in (ii) is exposing using the KrF  excimer laser.  3.  The pattern forming method according to claim  1,  wherein in the general formula (1 ), L represents a single  bond, an alkylene group, an aromatic ring group, a  cycloalkylene group, -COO-Li’-, ---0-Li’-, ----CONH-,  or a group which is formed by combining two or more of  these, Li’ represents an alkylene group, a cycloalkylene  group, an aromatic ring group, or a group formed by  combining an alkylene group and an aromatic ring group.  4.  The pattern forming method according to claim  1,  wherein the resin (A) comprises a repeating unit which is  represented by the following general formula (AI) as the  repeating unit including a group capable of generating a 20  polar group by being decomposed due to an action of an  acid:  in the general formula (AI),  Xa$_{1 }$ represents a hydrogen atom, an alkyl group, a cyano  group, or a halogen atom,  T represents a single bond or a divalent linking group,  Rx$_{1 }$ to Rx$_{3 }$ each independently represents an alkyl group  or a cycloalkyl group, and  two among Rx$_{1 }$ to Rx$_{3 }$ may be bonded to form a ring  structure.  5.  The pattern forming method according to claim  4,  wherein Rx$_{1 }$ to  RX3  in the general formula (AI) represent an 45  alkyl group.  6.  The pattern forming method according to claim  4,  wherein Rx$_{1 }$ to  RX3  in the general formula (AI) represent a  methyl group.  7.  The pattern forming method according to claim  1,  wherein the repeating unit which is represented by the  general formula (1) is a repeating unit which is represented  by the following general formula (1-1 ):  in the general formula (1-1 ),  R$_{1 }$ represents a hydrogen atom, an alkyl group, a halogen  atom, or an alkoxycarbonyl group,  R represents a hydrogen atom, an alkyl group, a  cycloalkyl group, a halogen atom, or an alkoxycarbonyl  group,  in the general formula (1 ),  a solvent  (C),  a compound (B) which generates an acid according to  irradiation with actinic rays or radiation; and  a non-acid-decomposable repeating unit which is repre› sented by the following general formula (1 ’), which is  different from the repeating unit including a carboxyl  group;  a non-acid-decomposable repeating unit which is repre› sented by the following general formula (1), which is  different from the repeating unit including a carboxyl  group,  a repeating unit including a carboxyl group, and a repeat› ing unit including a lactone structure, and the content of  the repeating unit including the lactone structure is  greater than  O  mo! % and less than or equal to 10 mo!  % with respect to all the repeating units in the resin (A);  a group capable of generating a polar group by being  decomposed due to an action of an acid,  a resin (A) which has a repeating unit including  the actinic ray-sensitive or radiation-sensitive resin com› position comprising:  (iii) forming a negative tone pattern by developing the  exposed film using a developer which includes an  organic solvent,  (ii) exposing the film using a KrF excimer laser, extreme  ultraviolet rays, or an electron beam, and  (i) forming a film using the actinic ray-sensitive or  radiation-sensitive resin composition,  10.  An actinic ray-sensitive or radiation-sensitive resin  composition which is subjected to a pattern forming method  comprising  9.  The pattern forming method according to claim  1,  wherein in the general formula (1 ’), L’ represents a single  bond, an alkylene group, an aromatic ring group, a  cycloalkylene group, -COO-Li’-, ---0-Li’-, ----CONH-,  or a group which is formed by combining two or more of  these, Li’ represents an alkylene group, a cycloalkylene  group, an aromatic ring group, or a group formed by  combining an alkylene group and an aromatic ring group.  8.  A method for manufacturing an electronic device which  includes the pattern forming method according to claim  1.  X"  represents  a  single bond,  an alkylene group,  --COO-, or ----CONR$_{64}$-,  R$_{64 }$represents a hydrogen atom or an alkyl group,  L" represents a single bond, --COO-, or an alkylene  group,  Ar represents an (n"+l) valent aromatic ring group, and  n" represents an integer of 1 to 4.  (Al) ~  X"  I  L"  I  Ar  I  (OH)n"  (1)  ~ $_{L }$ I  (Y)n 