US 2019/0235380 Al  28  Aug. 1, 2019  [0321]  As described above, the photosensitive resin film  formed using the negative photosensitive resin composition  [0320]  The photosensitive resin film after the exposure  step is highly transparent, and the haze value at the time of  irradiation with an i-line (wavelength of 365 nm) is prefer› ably 3% or less and more preferably in a range of 1.0% to  2.7%.  [0319]  The photosensitive resin film may be exposed  through typical exposure ( dry exposure) performed in air or  an inert gas such as nitrogen or through liquid immersion  exposure (liquid immersion lithography).  [0311]  In the film formation step, a photosensitive resin  film may be formed on the support by attaching the photo› sensitive resist film to the support. The cover film may be  peeled off before the photosensitive resist film is attached to  the support. In this manner, the surface of the exposed  photosensitive resin film is brought into contact with the  support, and the photosensitive resist film is attached to the  support. During the attachment, the support or the film may  be heated or pressed (laminated) as necessary. After the  [0310]  First, a photosensitive resin film is formed by  coating the support with the negative type photosensitive  resin composition of the embodiment using a known method  such as a spin coating method, a roll coating method, or a  screen printing method and performing a bake (post apply  bake (PAB)) treatment under a temperature condition of, for  example, 50°  C. to 150°  C. for 2 to 60 minutes.  [0309]  [Film Formation Step]  [0308]  The pattern forming method of the present embodi› ment can be performed in the following manner.  [0318]  Here, the radiation indicates ultraviolet rays, vis› ible light rays, far ultraviolet rays, X rays, electron beams,  or the like. The radiation dose varies depending on the type  of each component in the composition, the blending amount  thereof, the film thickness of a coating film, and the like. For  example, in a case where an ultra-high pressure mercury  lamp is used, the radiation does thereof is in a range of 100  to 2000 mJ/cm 2 .  [0317]  The wavelength used in the exposure is not par› ticularly limited, and the exposure is performed by selec› tively radiating (exposing to) radiation, for example, ultra› violet rays having a wavelength of300 to 500 nm, an i-line  (wavelength of 365 nm), or visible light rays. As sources of  such radiation, a low pressure mercury lamp, a high pressure  mercury lamp, an ultra-high pressure mercury lamp, a metal  halide lamp, and an argon gas laser can be used.  [0307]  A pattern forming method of the present embodi› ment includes a step of forming a photosensitive resin film  on a support (hereinafter, referred to as a "film formation  step") using the negative type photosensitive resin compo› sition or the photosensitive resist film of the embodiment  described above; a step of exposing the photosensitive resin  film (hereinafter, referred to as an "exposure step"); and a  step of developing the exposed photosensitive resin film to  form a negative type pattern (hereinafter, referred to as a  "development step").  [0306]  (Pattern Forming Method)  [0305]  The base film and the cover film may be formed of  the same film material or different film materials.  [0316]  Next, the formed photosensitive resin film is  exposed through a mask having a predetermined pattern  formed thereon (mask pattern) using a known exposure  device or selectively exposed through drawing or the like by  performing direct irradiation with electron beams without  using a mask pattern therebetween. In addition, a bake (post  exposure bake (PEB)) treatment is performed under a tem› perature condition of 80°  C. to 150°  C. for 40 to 600 seconds  and preferably 60 to 300 seconds.  [0315]  [Exposure Step]  [0314]  The film thickness of the photosensitive resin film  to be formed using the negative type photosensitive resin  composition or the photosensitive resist film is not particu› larly limited, but is preferably in a range of 10 to 100 µm.  Even in a case where a thick film is formed using the  negative type photosensitive resin composition of the  embodiment, excellent characteristics are obtained.  [0304]  As the cover film, known films such as a polyeth› ylene film and a polypropylene film are used. As the cover  film, a film whose adhesive force to the photosensitive resin  film is smaller than that of the base film is preferable. The  thickness of the cover film is preferably in a range of 2 to  150  µm, more preferably in a range of 2 to 100 µm, and still  more preferably in a range of 5 to 50 µm.  [0303]  As the base film, known films such as a thermo› plastic resin film are used. Examples of this thermoplastic  resin include polyesters such as polyethylene terephthalate.  The thickness of the base film is preferably in a range of 2  to 150 µm.  [0302]  The thickness of the photosensitive resin film is  preferably 100 µm  or less and more preferably in a range of  5 to 50 µm.  [0313]  Further, as the support, any one of the above› described substrates provided with an inorganic and/or  organic film may be used. Examples of the inorganic film  include an inorganic antireflection film (inorganic BARC).  Examples of the organic film include organic films such as  an organic antireflection film ( organic BARC) and a lower  layer organic film according to a multilayer resist method.  [0312]  The support is not particularly limited and a known  support of the related art can be used. For example, sub› strates for electronic components, and such substrates hav› ing predetermined wiring patterns formed thereon can be  used. More specific examples thereof include a metal sub› strate such as a silicon wafer, copper, chromium, iron, or  aluminum; a glass substrate; and a resin film such as  polyethylene terephthalate, polyethylene naphthalate, poly› propylene, or polyethylene. As the materials for the wiring  pattern, copper, aluminum, nickel, and gold can be used.  photosensitive resist film is attached to the support, the base  film may be peeled off before or after the exposure step  described below.  [0301]  The base film may be coated with the negative type  photosensitive resin composition according to an appropri› ate method using a blade coater, a lip coater, a comma coater,  or a film coater.  [0300]  The photosensitive resist film of the present  embodiment can be produced, for example, by coating the  base film with the negative photosensitive resin composition  of the embodiment described above, drying the composition  to form a photosensitive resin film, and laminating a cover  film on the photosensitive resin film.  [0299]  The photosensitive resist film of the present  embodiment is obtained by laminating a base film, a pho› tosensitive resin film formed by using the negative type  photosensitive resin composition described above, and a  cover film in that order.  [0298]  (Photosensitive Resist Film) 