May 30, 2019  1  US 2019/0163056 Al  CROSS-REFERENCE TO RELATED  APPLICATION  FIELD OF INVENTION  BACKGROUND  BRIEF DESCRIPTION OF THE FIGURES  SUMMARY  DETAILED DESCRIPTION  [0001]  This application claims the benefit of U.S. Provi› sional Application No. 62/590,516, entitled "METHOD OF  FORMING AN ENHANCED UNEXPOSED PHOTORE› SIST LAYER" and filed on Nov. 24, 2017, the disclosure of  which is hereby incorporated herein by reference.  [0002]  The present disclosure generally relates to methods  and systems for manufacturing electronic devices. More  particularly, the disclosure relates to methods of forming an  enhanced unexposed photoresist layer.  [0003]  As the trend has pushed semiconductor devices to  smaller and smaller sizes, different patterning techniques  have arisen. These techniques include immersion (ArF)  lithography with an exposure radiation at 193 nm combined  with double or quadruple patterning, extreme ultraviolet  lithography (EUV) with an exposure radiation around 13.5  nm, and EUV combined with double or quadrupole pattern› ing.  [0004]  The patterning techniques may utilize at least one  photoresist disposed on a substrate to enable high resolution  patterning of the substrate by the exposure radiation of a  lithography system. To satisfy the requirements of both high  resolution and low line-edge roughness, the photoresist may  be a thin layer.  [0005]  However, photoresists may have several draw› backs. In particular, high resolution photoresists may have  low sensitivity to the radiation used in the lithography step.  The sensitivity of the unexposed photoresist may be defined  as the minimum energy in mJ/cm2 that may be required to  generate a well-defined feature in the photoresist on the  substrate. The sensitivity of a photoresist is important when  using deep ultraviolet (ArF) or extreme ultraviolet (EUV)  exposure radiation. For example in lithography the radiation  intensity generated by the tool may be low and therefor the  throughput of the tool may be low if a photoresist is used  with a low sensitivity.  [0006]  It  may therefore be advantageous to enhance the  sensitivity of the unexposed photoresist to the exposure  radiation of the lithography tool to enhance the throughput  of the lithographic tool.  [0007]  In accordance with at least one embodiment of the  invention there is provided a method of forming an  enhanced unexposed photoresist layer with an increased  sensitivity to exposure radiation from an unexposed photo› resist layer on a substrate by:  [0008]  providing the substrate with the unexposed photo› resist layer in a reaction chamber;  [0009]  providing a first precursor comprising at least a  portion of a photosensitizer sensitive to exposure radiation  to the substrate in the reaction chamber thereby infiltrating  the unexposed photoresist layer on the substrate with the  first precursor for a first period  Tl.  By infiltrating the  unexposed photoresist layer on the substrate with the first  [0018]  Embodiments in accordance with the invention  relate to the combination of hard masks with a film infil› tration processes. This combination of a unexposed photo› resist layer and infiltration processes can alter the properties  [0017]  Although certain embodiments and examples are  disclosed below, it will be understood by those in the art that  the invention extends beyond the specifically disclosed  embodiments and/or uses of the invention and obvious  modifications and equivalents thereof. Thus, it is intended  that the scope of the invention disclosed should not be  limited by the particular disclosed embodiments described  below.  [0016]  It  will be appreciated that elements in the figures  are illustrated for simplicity and clarity and have not nec› essarily been drawn to scale. For example, the dimensions of  some of the elements in the figures may be exaggerated  relative to other elements to help improve understanding of  illustrated embodiments of the present disclosure.  [0015]  FIG.  3  illustrates an additional exemplary system  in accordance with various exemplary embodiments of the  disclosure.  [0014]  FIG.  2  illustrates an exemplary system in accor› dance with various exemplary embodiments of the disclo› sure.  [0013]  FIG.  1  is a flowchart in accordance with at least one  embodiment of the invention.  [0012]  These and other features, aspects, and advantages  of the invention disclosed herein are described below with  reference to the drawings of certain embodiments, which are  intended to illustrate and not to limit the invention.  [0011]  All of these embodiments are intended to be within  the scope of the invention herein disclosed. These and other  embodiments will become readily apparent to those skilled  in the art from the following detailed description of certain  embodiments having reference to the attached figures, the  invention not being limited to any particular embodiment(s)  disclosed.  [0010]  For purposes of summarizing the invention and the  advantages achieved over the prior art, certain objects and  advantages of the invention have been described herein  above. Of course, it is to be understood that not necessarily  all such objects or advantages may be achieved in accor› dance with any particular embodiment of the invention.  Thus, for example, those skilled in the art will recognize that  the invention may be embodied or carried out in a manner  that achieves or optimizes one advantage or group of advan› tages as taught or suggested herein without necessarily  achieving other objects or advantages as may be taught or  suggested herein.  precursor comprising at least a portion of a photosensitizer  sensitive to exposure radiation for a first period  Tl  the  amount of photo sensitizer can be increased in the unexposed  photoresist layer. The amount of photosensitizer in the  photoresist may be limited for example because of its  insolubility in the photoresist before spinning it on the  substrate. By infiltrating at least a portion of the photosen› sitizer after the unexposed photoresist layer is spun on the  substrate extra photosensitizer may be provided in the  photoresist layer.  METHOD OF FORMING AN ENHANCED  UNEXPOSED PHOTORESIST LAYER 