agreement with experimental results than 1D-DD simulations. So far, the use of 3D-ME modeling has almost exclusively been limited t o unipo lar devices. Extending unipolar 3D-ME modeling t o bipolar transport is not trivial. It is not a priori clear how in 3D-ME simulations charge-carrier recombination and dissociation can be included in a manner that still allows predictive modelling of the device performance. Zhou et al. have proposed a 3D-ME method within which recombination is treated as a local process, with a rate proportional t o the product of the electron and hole concentration on the molecule at which the recombination takes place and with a phenomenological rate coefficient that is treated as a free pa rameter. As will be shown in this work, such an approach incorrectly neglects the consequences of the long-range nature of the Coulomb interaction between electrons and holes. Casalegno et al. have developed a 3D-ME model that specifically focusses on organic solar cells. A key challenge is then t o properly describe the dissociation probability of charge-transfer (CT) excitons with the electron and hole residing on adjacent donor and acceptor sites, respectively. Within that model, the rate for this process and for the competing processes such as recombination are obtained from the results of KMC simulations of these processes for isolated CT excitons. A disadvan tage of this approach is that such initial K A C simulations should be repeated when considering system or experimental variations, affecting, e.g., the material structure, energetic disorder, the binding energy of excitons localized on each molecule, dielectric constants, temperature, and local electric field. In this work, we develop a bipolar 3D-ME model for the charge transport and recombination processes in sandwich-type devices based on disordered organic semi conductor materials such as OLEDs, with the aim t o provide a computationally ef ficient method for predictive device modeling at low voltages. The model describes recombination as resulting from an interaction between an electron and a hole resid ing on nearest-neighbor sites, with a rate of the final recombination step that includes the effects of the percolative nature of the long-distance electron and hole transport towards each other. Without loss of computational efficiency, recombination is thus described effectively as a non-local process. We show how the effective rate coeffi cient can be obtained by comparing the results of KMC simulations with the results of a simple average-medium approach within which a mean-field approximation is used, and demonstrate the approach for the case of materials with a Gaussian den-