175  US 9,904,167 B2  176  using a scanning electron microscope (S-4300 manufactured  by Hitachi, Ltd.). In the cross-sectional shape of the line  pattern, for the ratio represented by [the line width in the  bottom section of the line pattern/the line width in the center  section (the height position of half the height of the line  pattern) of the line pattern], a line pattern having a ratio of  1.2 or more was set as a "forward taper", a line pattern  having a ratio of 1.05 or more to less than 1.2 was set as a  "slightly forward taper", and a line pattern having a ratio of  less than 1.05 was set as a "rectangle", and evaluation was  performed.  In the resist solution formula, the preparation of the resist  solution (negative type resist compositions 2D to 14D,  negative type resist comparative compositions ID to 4D),  the negative type pattern forming, and the evaluation were  performed in the same manner as Example 1 G except for the  components described in Table 10 below.  The evaluation results are shown in Table 11 below.  TABLE 10  Composition  Example  1D  2D  3D  4D  SD  6D  7D  SD  9D  !OD  llD  12D  13D  14D  Comparative  Composition lD  Comparative  Composition 2D  Comparative  Composition 3D  Comparative  Composition 4D  [EUV exposure; organic-based developer (negative type)]  Basic  Solvent  Photoacid  Compound  Surfactant (9.0 g)  generator  Resin  (0.002 g)  (0.001 g)  (mass ratio)  A2(0.12 g)  P-13(0.6 g)  B2  W-1  Sl/S2  (6/4)  Al(0.12 g)  P-13(0.6 g)  B2  W-1  Sl/S2/S6  (6/3/1)  A7(0.12 g)  P-14(0.6 g)  B2  W-2  Sl/S7  (6/4)  AS(0.12 g)  P-16(0.6 g)  B3  W-2  Sl/S2  (6/4)  Al0(0.12 g)  P-17(0.6 g)  B4  W-3  Sl/S2  (6/4)  All(0.12 g)  P-18(0.6 g)  BS  W-1  Sl/S2  (6/4)  A12(0.12 g)  P-19(0.6 g)  B3  W-3  Sl/S2  (6/4)  A2/Al  P-1/P-5  B6  None  Sl/S2  (0.06 g/0.06 g)  (0.3 g/0.3 g)  (6/4)  A14(0.12 g)  P-20(0.6 g)  BS  W-1  Sl/S2  (6/4)  A12(0.12 g)  P-15(0.6 g)  B4  W-1  Sl/S2  (6/4)  A7(0.12 g)  P-21(0.6 g)  B6  W-1  Sl/S2  (6/4)  A14(0.12 g)  P-22(0.6 g)  B2  W-1  Sl/S2  (6/4)  A17(0.12 g)  P-13(0.6 g)  B2  W-1  Sl/S2  (6/4)  A18(0.12 g)  P-13(0.6 g)  B2  W-1  Sl/S2/S6  (6/3/1)  Comparative  P-1(0.6 g)  B2  W-1  Sl/S2  Compound 1  (6/4)  (0.12 g)  Comparative  P-1(0.6 g)  B2  W-1  Sl/S2  Compound 2  (6/4)  (0.12 g)  Comparative  P-1(0.6 g)  B2  W-1  Sl/S2  Compound 3  (6/4)  (0.12 g)  Comparative  P-1(0.6 g)  B2  W-1  Sl/S2  Compound 4  (6/4)  (0.12 g)  A 1: 1 line and space resist pattern with a line width of 50  nm was formed with the exposure amount indicating the  sensitivity described above. Then, for an arbitrary 30 points  in 10  µm in the length direction, the distance from a  reference line where an edge should be present was mea› sured using a scanning electron microscope (S-9220 manu› factured by Hitachi, Ltd.). Then, the standard deviation of  this distance was determined and  3a  was calculated. A  smaller value indicates a more favorable performance.  Abbreviations of the materials other than those described  above  used  in  the  Examples/Comparative  Examples  described above are described below.  The structure of the resin, composition ratio (molar ratio),  weight-average molecular weight, and degree of dispersity  used in the Examples and the Comparative Examples are  shown below.  [Line Edge Roughness (LER)]  [Acid-Decomposable Resin]  [Example 2G] to [Example 14G] and [Comparative  Example lG] to [Comparative Example 4G] 