Apr. 16, 2020  1  US 2020/0117085 Al  SEMICONDUCTOR RESIST COMPOSITION,  AND METHOD OF FORMING PATTERNS  USING THE COMPOSITION  CROSS-REFERENCE TO RELATED  APPLICATION  SUMMARY  [0001]  This application is a continuation-in-part of U.S.  patent application Ser. No. 16/211,145, filed on Dec. 5,  2018, which claims priority to and the benefit of Korean  Patent Application Nos. 10-2018-0089414 filed in the  Korean Intellectual Property Office on Jul. 31, 2018, and  10-2019-0090516 filed in the Korean Intellectual Property  Office on Jul. 25, 2019, the entire contents of all of which are  incorporated herein by reference.  [0007]  One or more aspects of embodiments of the present  disclosure are directed toward a semiconductor resist com› position having improved etch resistance, sensitivity and  ease of handling.  [0008]  One or more aspects of embodiments of the present  disclosure are directed toward a method of forming patterns  using the semiconductor resist composition.  [0009]  A semiconductor resist composition according to  an embodiment includes an organometallic compound rep› resented by Chemical Formula 1 and a solvent.  BACKGROUND  1.  Field  [0002]  One or more aspects of embodiments of this dis› closure are directed toward a semiconductor resist compo› sition and a method of forming patterns using the compo› sition.  2. Description of the Related Art  [0003]  EUV (extreme ultraviolet) lithography is recently  being looked at as one essential technology for manufactur› ing next generation semiconductor devices. The EUV lithog› raphy is a pattern-forming technology using an EUV ray  having a wavelength of about 13.5 nm as an exposure light  source. By utilizing the EUV lithography, an extremely fine  pattern ( e.g., a pattern having a width of less than or equal  to about 20 nm) may be formed in an exposure process  during a manufacture of a semiconductor device.  [0004]  The extreme ultraviolet (EUV) lithography is real› ized through development of compatible photoresists which  can be performed at a spatial resolution (of the photoresist)  of less than or equal to about 16 nm. Currently, efforts are  being made to satisfy insufficient specifications of related  chemically amplified (CA) photoresists such as resolution,  photospeed, and feature roughness ( e.g., line edge roughness  (LER)) for the next generation devices.  [0005]  An intrinsic image blur due to an acid catalyzed  reaction in these polymer-type photoresists (e.g., polymer  photoresists) limits a resolution in small feature sizes, which  is a known phenomenon in electron beam (e-beam) lithog› raphy. The chemically amplified (CA) photoresists are  designed for high sensitivity. However, in related CA pho› toresists, their elemental makeups may reduce light absor› bance of the photoresists at a wavelength of about 13.5 nm  and thus may decrease their sensitivity. Thus, the chemically  amplified (CA) photoresists may partially have more diffi› culties under an EUV exposure.  [0006]  For example, the CA photoresists may have diffi› culties in the small feature sizes due to roughness issues, for  example, line edge roughness (LER) of the CA photoresists  experimentally turns out to be increased, as a photospeed is  decreased partially due to an essence of acid catalyst pro› cesses. Accordingly, a novel high performance photoresist is  required in a semiconductor industry because of these  defects and problems of the CA photoresists.  [0010]  In Chemical Formula 1,  [0011]  R$^{1 }$may be selected from a substituted or unsubsti› tuted Cl to C20 alkyl group, a substituted or unsubstituted  C3 to C20 cycloalkyl group, a substituted or unsubstituted  C2 to C20 alkenyl group, a substituted or unsubstituted C2  to C20 alkynyl group, a substituted or unsubstituted C6 to  C30 aryl group, a substituted or unsubstituted C6 to C30  benzyl group, and-Rc  ---0-Rd  (wherein Rc is a substituted  or unsubstituted Cl to C20 alkylene group and  Rd  is a  substituted or unsubstituted Cl to C20 alkyl group),  [0012]  R 2  to R 4  may each independently be selected from  -OR  a  and---0C(=O)R 6 ,  Ra  is selected from a substituted  or unsubstituted Cl to C20 alkyl group, a substituted or  unsubstituted C3 to C20 cycloalkyl group, a substituted or  unsubstituted C2 to C20 alkenyl group, a substituted or  unsubstituted C2 to C20 alkynyl group, a substituted or  unsubstituted C6 to C30 aryl group, and combinations  thereof, and  [0013]  R 6  is selected from hydrogen, a substituted or  unsubstituted Cl to C20 alkyl group, a substituted or unsub› stituted C3 to C20 cycloalkyl group, a substituted or unsub› stituted C2 to C20 alkenyl group, a substituted or unsubsti› tuted C2 to C20 alkynyl group, a substituted or unsubstituted  C6 to C30 aryl group, and combinations thereof.  [0014]  A method of forming patterns according to another  embodiment includes forming an etching subject layer on a  substrate, coating the semiconductor resist composition on  the etching subject layer to form a photoresist layer, pat› terning the photoresist layer to form a photoresist pattern,  and etching the etching subject layer using the photoresist  pattern as an etching mask.  [0015]  The semiconductor resist composition according to  an embodiment has relatively excellent ( e.g., suitable) etch  resistance and sensitivity and may be easily handled, and  thus may provide a photoresist pattern having improved  sensitivity and limit resolution, and a high aspect ratio  without a pattern collapse.  BRIEF DESCRIPTION OF THE DRAWINGS  [0016]  FIGS.  1-5  are cross-sectional views of acts of a  method of forming patterns using a semiconductor resist  composition according to an embodiment, and  [0017]  FIG.  6  shows a SEM image of a resist line obtained  by using the semiconductor resist composition according to  Chemical Formula 1 