US 20160209749Al  c19)  United States  c12)  Patent Application Publication  YAMAMOTO et al.  c10)  Pub. No.: US 2016/0209749 Al  (43)  Pub. Date:  Jul. 21, 2016  (54)  PATTERN FORMING METHOD, METHOD  FOR FORMING PATTERNED MASK,  METHOD FOR MANUFACTURING  ELECTRONIC DEVICE, AND ELECTRONIC  DEVICE  (71)  Applicant:  FUJIFILM Corporation,  Tokyo (JP)  (72)  Inventors:  Hisao YAMAMOTO,  Shizuoka (JP);  Shinichi SUGIYAMA,  Shizuoka (JP)  (73)  Assignee:  FUJIFILM Corporation,  Tokyo (JP)  (21)  Appl. No.:  15/083,389  (22)  Filed:  Mar. 29, 2016  (63)  Continuation of application No. PCT/JP2014/075681,  filed on Sep. 26, 2014.  (52)  U.S. Cl.  CPC ..  G03F  7140  (2013.01);  G03F  7116  (2013.01);  G03F  7120  (2013.01);  G03F  7132  (2013.01)  (51)  Int. Cl.  Publication Classification  Related U.S. Application Data  (30)  Foreign Application Priority Data  (57)  ABSTRACT  G03F  7140  G03F  7120  G03F  7132  G03F  7116  (2006.01)  (2006.01)  (2006.01)  (2006.01)  There is provided a pattern forming method which includes  (I) a step of forming a first film by applying an active light› sensitive or radiation-sensitive resin composition which con› tains (A) a resin having a repeating unit having a group that is  decomposed by the action of an acid and generates a polar  group and (B) a compound that generates an acid by irradia› tion with active light or radiation to a substrate, (II) a step of  exposing the first film, (III) a step of forming a line-and-space  pattern by developing the exposed first film, and (IV) a step of  coating the line-and-space pattern with a second film, in  which the top width of the line pattern of the line-and-space  pattern formed in Step (III) is larger than the bottom width  thereof.  Sep. 30, 2013  (JP) ................................. 2013-205808 