441  US 9,323,150 B2  442  -continued  -continued  N-3  /2  N-4  N-5  N-6  N-7  F  O  O  F  F  F  0  F+~ - ~  -~---fl-----,lf----+--t-~  - N  r-\N- 11  II  II  \_J  F  O  O  F  F  F  0  rO~OH  /O~N~ O ~0H  N-8  N-9  N-10  Compound N-7 was synthesized in the manner as  described in Section [0354] of JP-A-2006-330098.  Use was made of any of the following surfactants W-1 to  W-4.  W-1: Megafac ROS (produced by Dainippon Ink & Chemi› cals, Inc.; fluorinated and siliconized),  W-2: polysiloxane polymer KP-341 (produced by Shin- Etsu Chemical Co., Ltd.; siliconized),  W-3: Troy Sol S-366 (produced by Troy Chemical Co.,  Ltd.; fluorinated), and  W-4: PF6320 (produced by OMNOVA SOLUTIONS,  INC.; fluorinated).  Use was made of appropriate mixtures of the following  solvents S-1 to S-4.  Components of Table 3 below were dissolved in solvents of  the same table, thereby obtaining solutions of 3.0 mass %  solid content. The solutions were each passed through a poly› tetrafluoroethylene filter of0.1  µm  pore size, thereby obtain› ing positive resist solutions.  The numeric value "mass %" appearing in Table 3 is based  on the total solids excluding surfactants of the composition.  The content of surfactant was set at 0.01 mass% based on the  total solids excluding surfactants of the composition.  Each of the above positive resist solutions was applied onto  a silicon substrate having undergone a hexamethyldisilazane  treatment by means of a spin coater, and dried by heating on  a hot plate at 110°  C. for 90 seconds. Thus, resist films of 100  nm average thickness were obtained.  [Sensitivity, Pattern Shape, Roughness Characteristic, and  Dry Etching Resistance: Exposed to EB]  Each of the resist films was irradiated with electron beams  by means of an electron beam lithography system (HL750  manufactured by Hitachi, Ltd., acceleration voltage 50 KeV).  Immediately after the irradiation, the film was baked on a hot  plate at 130°  C. for 90 seconds. The baked film was developed  with a 2.38 mass % aqueous tetramethylammonium hydrox› ide solution at 23 °  C. for 60 seconds. After the development,  the film was rinsed with pure water for 30 seconds, and dried.  Thus, a line and space pattern (line:space=l:1) was formed.  The shape of cross section of the obtained line and space  pattern was observed by means of a scanning electron micro› scope (model S-4800 manufactured by Hitachi, Ltd.). The  (Sensitivity)  Compound N-7  Synthetic Example 5  <Surfactant>  <Solvent>  S-1: PGMEA (b.p.=146°  C.),  S-2: PGME (b.p.=120°  C.),  S-3: methyl lactate (b.p.=145°  C.), and  S-4: cyclohexanone (b.p.=157°  C.).  <Evaluation of Resist (EB): Exposed to EB or KrF> 