49 95(3):032104, 2009. #6,914,801, July 5 2005. [225] J. Sarkar and B. Gleixner. Evolution of phase change memory characteristics with operating cycles: Electrical characterization and physical modeling. Applied Physics Letters , 91(23):233506, 2007. [226] Y.Y. Lin, Y.C. Chen, C. T. Rettner, S. Raoux, H.Y. Cheng, S.H. Chen, S.L. Lung, C. Lam, and R. Liu. Fast speed bipolar operation of ge–sb–te based phase change bridge devices. In 2008 International Conference on Solid State Devices and Materials , pages 462–463, 2008. [227] S. Y. Lee, J. H. Jeong, T. S. Lee, W. M. Kim, and B. K. Cheong. Bias polarity dependence of a phase change memory with a ge–doped sbte: a method for multilevel programing. Applied Physics Letters , 92(24):243507, 2008. [228] S. Lee, J.-H. Jeong, Y.-W. Park, W. Zhe, T. S. Lee, and B.-K. Cheong. Degradation mechanism and curing method of phase change memory (pcm) device charac- teristics during cyclic programming. In EPCOS 2008 , 2008. [229] S. Lee, J. Jeong, T. S. Lee, W. M. Kim, and B. Cheong. A study on the failure mechanism of a phase–change memory in write/erase cycling. IEEE Electr. Dev. Lett. , 30(5):448–450, 2009. [230] C. Cabral, L. Krusin-Elbaum, J. Bruley, S. Raoux, V. Deline, A. Madan, and T. Pinto. Direct evidence for abrupt postcrystallization germanium precipitation in thin phase–change films of sb–15 at.% ge. Applied Physics Letters , 93(7):071906, 2008. [231] M. Grossi, M. Lanzoni, and B. Ricco. Program schemes for multilevel flash memories. Proceedings of the IEEE , 91(4):594–601, 2003. [232] J. B. Philipp and T. Happ. Integrated circuit having resistive memory. U.S. Patent #7,372,725, May 13 2008. [233] L.A. Lastras-Montano, M. Franceschini, T. Mittel- holzer, and M. Sharma. Rewritable storage channels. In International Symposium on Information Theory and its Applications (ISITA 2008) , 2008. [234] T. Mittelholzer, M. Franceschini, L. A. Lastras- Montano, I. Elfadel, and M. Sharma. Rewritable storage channels with data–dependent noise. In International Conference on Communications (ICC 2009) , 2009. [235] D. Mantegazza, D. Ielmini, E. Varesi, A. Pirovano, and A.L. Lacaita. Statistical analysis and modeling of pro- gramming and retention in pcm arrays. In IEDM Tech- nical Digest , pages 311–314, 2007. [236] S. A. Kostylev, W. Czubatyj, and T. Lowrey. Method of eliminating drift in phase-change memory. U.S. Patent [249] S.S.P. Parkin. Spintronic materials and devices: past, present and future! In IEDM Technical Digest , pages 903–906, 2004. [248] M. Hosomi, H. Yamagishi, T. Yamamoto, K. Bessho, Y. Higo, K. Yamane, H. Yamada, M. Shoji, H. Hachino, C. Fukumoto, H. Nagao, and H. Kano. A novel non- volatile memory with spin torque transfer magnetiza- tion switching: spin–ram. In IEDM Technical Digest , pages 459–462, 2005. [247] M. Hart. Step–and–flash imprint lithography for storage–class memory. In EIPBN , Jun 2007. [246] M. Johnson, A. Al-Shamma, D. Bosch, M. Crowley, M. Farmwald, L. Fasoli, A. Ilkbahar, B. Kleveland, T. Lee, T. Y. Liu, Q. Nguyen, R. Scheuerlein, K. So, and T. Thorp. 512–mb prom with a three–dimensional array of diode/antifuse memory cells. IEEE J. Solid State Circ. , 38(11):1920–1928, 2003. [245] K. Gopalakrishnan, R. S. Shenoy, C. T. Rettner, R. S. King, Y. Zhang, B. Kurdi, L. D. Bozano, J. J. Welser, M. E. Rothwell, M. Jurich, M. I. Sanchez, M. Hernan- dez, P. M. Rice, W. P. Risk, and H. K. Wickramasinghe. The micro to nano addressing block (mnab). In IEDM Technical Digest , pages 471–474, 2005. [244] Z. H. Zhong, D. L. Wang, Y. Cui, M. W. Bockrath, and C. M. Lieber. Nanowire crossbar arrays as ad- dress decoders for integrated nanosystems. Science , 302(5649):1377–1379, 2003. [243] G. Ungerboeck. Channel coding with multilevel/phase signals. IEEE Transactions on Information Theory , IT- 28:55–67, 1982. [242] R. G. Gallager. Low Density Parity Check Codes . M.I.T. Press, 1963. [241] A. Hocquenghem. Codes correcteurs d’erreurs. Chiffres , 2:147–156, 1959. [240] R. C. Bose and D. K. Ray-Chaudhuri. Further results on error correcting binary group codes. Information and Control , 3:279–290, 1960. [239] R. C. Bose and D. K. Ray-Chaudhuri. On a class of error correcting group codes. Information and Control , 3:68–79, 1960. [238] I. S. Reed and G. Solomon. Polynomial codes over cer- tain finite fields. Journal of the Society of Industrial and Applied Mathematics , 8:300–304, 1960. [237] R. W. Hamming. Error detecting and error correcting codes. Bell System Technical Journal , 29:147–160, 1950.