Mar. 29, 2007  US 2007/0072121 Al  27  solution was micro filtered through a membrane filter having  a pore size of 0.1 pm to obtain a resist solution.  [0162]  This resist solution was coated on a 6-inch silicon  wafer by using a spin coater, Mark 8, manufactured by  Tokyo Electron Ltd. and then baked at 110° C. for 90  seconds to obtain auniform film having a thickness of 0.25  µm.  [0163]  This resist film was then irradiated with electron  beams by using an electron beam image-drawing apparatus  (HL 7 50, manufactured by Hitachi Ltd., accelerating voltage:  50 KeV). After the irradiation, the resist film was baked at  110°  C. for 90 seconds, dipped in an aqueous 2.38 mass%  tetramethylannnonium hydroxide (TMAH) solution for 60  seconds, rinsed with water for 30 seconds andthen dried. The  obtained pattern was evaluated by the following methods.  [0164]  The cross-sectional profile of the pattern obtained  was observed by using a scanning electron microscope  (S-4300, manufactured by Hitachi, Ltd.). The minimum  irradiation energy for resolving a 0.5-µm  line (line:space=  1: 1) was defined as the sensitivity.  [0165]  The limiting resolving power (the line and space  were separated and resolved) at the irradiation dose of  giving the above-described sensitivity was defined as the  resolving power.  [0166]  The cross-sectional profile of a 0.15-µm  line pat› tern at the irradiation dose of giving the above-described  sensitivity was observed by using a scanning electron micro› scope (S-4300, manufactured by Hitachi, Ltd.) and evalu› ated on a three-stage scale of rectangular, slightly tapered,  and tapered.  [0167]  In a 0.15-µm  line pattern at the irradiation dose of  giving the above-described sensitivity, the line width of a  dense pattern (line:space=l:1) and the line width of an  isolated pattern were measured. The difference there between  was defined as the defocus latitude depended on line pitch.  [0168]  The results of Example 1 were very good, that is,  the sensitivity was 8.5 µC/cm 2 ,  the resolving power was 0.10  µm, the pattern profile was rectangular and the defocus  latitude depended on line pitch was 12 nm.  [0169]  Using the compounds shown in Table 2, the prepa› ration and coating of resist and the evaluation of electron  beam exposure were performed thoroughly in the same  manner as in Example 1. The evaluation results are shown  in Table 2.  [0170]  The component ( c) and other component used in  Examples and the resin used in Comparative Example are as  follows.  [0171]  D-1: tri-n-hexylamine  [0172]  D-2: 2,4,6-triphenylimidazole  [0173]  D-3: tetra-(n-butyl) annnonium hydroxide  (Organic Basic Compound)  (Other Component (Surfactant))  [0174]  W-1: a fluorine-containing surfactant, Megafac  F-176 (produced by Dainippon Ink & Chemicals, Inc.)  [0175]  W-2:  a  fluorine/silicon-containing  surfactant,  Megafac ROS (produced by Dainippon Ink & Chemicals,  Inc.)  [0176]  W-3: a silicon-containing surfactant, polysiloxane  polymer KP-341 (produced by Shin-Etsu Chemical Co.,  Ltd.)  TABLE 2  Com osition  Sulfonic Acid  Carboxylic Acid  Resin Generator  Generator  Example 1  A-1  B-2 (0.065 g)  Example 2  A-3  B-4 (0.07 g)  C-4 (0.005 g)  Example 3  A-7  B-2 (0.07 g)  C-7 (0.003 g)  Example 4  A-8  B-19 (0.06 g)  Example 5  A-9  B-16 (0.07 g)  C-13 (0.0059 g)  Example 6  A-10  B-17 (0.07 g)  C-14 (0.0049 g)  Example 7  A-13  B-19 (0.06 g)  Example 8  A-6  B-22 (0.079 g)  C-1 (0.003 g)  Example 9  A-8  B-18 (0.05 g)  C-2 (0.001 g)  Example 10  A-2  B-41 (0.07 g)  C-17 (0.006 g)  Example 11  A-12  B-57 (0.07 g)  Example 12  A-13  B-70 (0.06 g)  C-22 (0.002 g)  Comparative  C-1  B-2 (0.065 g)  C-2 (0.005 g)  Example 1  Evaluation  Defocus  Latitude  Depended  Basic  Other  Resolving  on Line  Compound  Component  Sensitivity  Power  Pattern  Pitch  (0.003 g)  (0.001 g)  (µC/cm 2 )  (µm)  Profile  (nm)  D-1  W-1  8.5  0.10  rectangular  12  D-1  W-1  9.5  0.10  rectangular  10  D-2  W-1  10.0  0.10  rectangular  14  D-2  W-1  8.5  0.09  rectangular  10  D-2  W-1  10.5  0.09  rectangular  12  D-2  W-2  9.5  0.10  slightly  12  tapered  D-2  W-2  10.5  0.09  rectangular  10  D-2  W-2  9.5  0.09  rectangular  12  D-2  W-2  9.5  0.09  rectangular  12  D-3  W-2  10.5  0.10  rectangular  13  D-3  W-3  8.5  0.10  rectangular  15  D-3  W-1  10.5  0.10  slightly  12  tapered  D-1  W-1  13.5  0.15  tapered  35  (2) Production of Positive Resist Pattern  (2-1) Sensitivity  (2-2) Resolving Power  (2-3) Pattern Profile  (2-4) Defocus Latitude Depended on Line Pitch  Examples 2 to 12 and Comparative Example 1 