(IO)  Patent No.:  US 7,753,974 B2  Jul. 13, 2010  (45)  Date of Patent:  c12)  United States Patent  Miyabe et al.  (54)  POLISHING COMPOSITION FOR  SEMICONDUCTOR WAFER, METHOD FOR  PRODUCTION THEREOF AND POLISHING  METHOD  (75)  Inventors:  Shinsuke Miyabe,  Tokyo (JP);  Kuniaki  Maejima,  Tokyo (JP);  Masahiro Izumi,  Tokyo (JP);  Hiroaki Tanaka,  Kanagawa  (JP)  (73)  Assignee:  Nippon Chemical Industrial Co., Ltd.,  Tokyo (JP)  ( *)  Notice:  Subject to any disclaimer, the term ofthis  patent is extended or adjusted under 35  U.S.C. 154(b) by  O  days.  (21)  Appl. No.:  12/153,111  May 14, 2008  (22)  Filed:  (52)  U.S. Cl.  .............................  51/308;  51/307; 51/309;  106/3; 438/691; 438/692; 438/693; 438/694  (58)  Field of Classification Search  ........... 51/307-309;  106/3; 438/691-694  See application file for complete search history.  (56)  References Cited  U.S. PATENT DOCUMENTS  FOREIGN PATENT DOCUMENTS  (57)  ABSTRACT  7 Claims, No Drawings  (65)  Prior Publication Data  (30)  Foreign Application Priority Data  B24D 3102  (2006.01)  C09C 1168  (2006.01)  C09C 1102  (2006.01)  C09K 3/14  (2006.01)  H0JL 211302  (2006.01)  (51)  Int. Cl.  5,767,016 A *  6/1998 Muroyama .................. 438/693  6,299,659 Bl* 10/2001 Kido et al. .................... 51/309  6,844,263 B2 *  1/2005 Shimazu et al. ............. 438/692  JP  08-045934  2/1996  JP  08-083780  3/1996  JP  2001-332518  11/2001  JP  2003-243340  8/2003  JP  2006-196508  7/2006  WO  WO-89/12082  12/1989  * cited by examiner  Primary Examiner-Anthony  J Green  Assistant Examiner-Pegah  Parvini  (74)  Attorney, Agent, or  Firm-Edwards Angell Palmer &  DodgeLLP  The present invention relates to a polishing composition for a  substrate including a metal such as wiring, etc., formed on a  semiconductor wafer, which can provide a high polishing rate  without causing scratches on the wiring metal, a method of  producing the polishing composition, and a polishing  method. The polishing composition for a semiconductor  wafer comprises an acid and an aqueous medium dispersion  containing positively-charged silica particles having an  amino group-containing silane coupling agent bonded on a  surface thereof, the polishing composition having a pH of 2 to  6.  May 18, 2007  (JP)  ............................. 2007-132223  US 2008/0287038 Al  Nov. 20, 2008  US007753974B2 