Aug. 27, 2020  154  US 2020/0272048 Al  formate, methyl 3-phenylpropionate, benzyl propionate,  ethyl phenylacetate, and 2-phenylethyl acetate, and mixtures  thereof.  [0168]  At the end of development, the resist film is rinsed.  As the rinsing liquid, a solvent which is miscible with the  developer and does not dissolve the resist film is preferred.  Suitable solvents include alcohols of 3 to 10 carbon atoms,  ether compounds of 8 to 12 carbon atoms, alkanes, alkenes,  and alkynes of 6 to 12 carbon atoms, and aromatic solvents.  Specifically, suitable alcohols of 3 to 10 carbon atoms  include n-propyl alcohol, isopropyl alcohol, I-butyl alcohol,  2-butyl alcohol, isobutyl alcohol, tert-butyl alcohol, 1-pen› tanol, 2-pentanol, 3-pentanol, tert-pentyl alcohol, neopentyl  alcohol, 2-methyl-1-butanol, 3-methyl-1-butanol, 3-methyl- 3-pentanol, cyclopentanol, 1-hexanol, 2-hexanol, 3-hexanol,  2,3-dimethyl-2-butanol, 3,3-dimethyl-1-butanol, 3,3-dim› ethyl-2-butanol,  2-ethyl-1-butanol,  2-methyl-1-pentanol,  2-methyl-2-pentanol, 2-methyl-3-pentanol 3-methyl-1-pen› tanol, 3-methyl-2-pentanol, 3-methyl-3-pentanol, 4-methyl- 1-pentanol,  4-methyl-2-pentanol,  4-methyl-3-pentanol,  cyclohexanol, and 1-octanol. Suitable ether compounds of 8  to 12 carbon atoms include di-n-butyl ether, diisobutyl ether,  di-sec-butyl ether, di-n-pentyl ether, diisopentyl ether, di› sec-pentyl ether, di-tert-pentyl ether, and di-n-hexyl ether.  Suitable alkanes of 6 to 12 carbon atoms include hexane,  heptane, octane, nonane, decane, undecane, dodecane, meth› ylcyclopentane, dimethylcyclopentane, cyclohexane, meth› ylcyclohexane,  dimethylcyclohexane,  cycloheptane,  cyclooctane, and cyclononane. Suitable alkenes of 6 to 12  carbon atoms include hexene, heptene, octene, cyclohexene,  methylcyclohexene,  dimethylcyclohexene,  cycloheptene,  and cyclooctene. Suitable alkynes of 6 to 12 carbon atoms  include hexyne, heptyne, and octyne. Suitable aromatic  solvents include toluene, xylene, ethylbenzene, isopropyl› benzene, tert-butylbenzene and mesitylene. The solvents  may be used alone or in admixture.  [0169]  Rinsing is effective for minimizing the risks of  resist pattern collapse and defect formation. However, rins› ing is not essential.  If rinsing is omitted, the amount of  solvent used may be reduced.  [0170]  A hole or trench pattern after development may be  shmnk by the thermal flow, RELACSfi or DSA process. A  hole pattern is shrunk by coating a shrink agent thereto, and  baking such that the shrink agent may undergo crosslinking  at the resist surface as a result of the acid catalyst diffusing  from the resist layer during bake, and the shrink agent may  attach to the sidewall of the hole pattern. The bake is  preferably at a temperature of 70 to 180°  C., more preferably  80 to 170°  C., for a time of 10 to 300 seconds. The extra  shrink agent is stripped and the hole pattern is shrunk.  [0171]  Examples of the invention are given below by way  of illustration and not by way of limitation. The abbreviation  "pbw" is parts by weight.  [0172]  Quenchers 1 to 35 used in resist compositions have  the structure shown below. They were synthesized by esteri› fying a compound having a carboxyl group with an amino  compound having a tertiary hydroxyl group and mixing the  resulting compound with a carboxylic acid or sulfonamide  compound.  EXAMPLES  Quencher  6  Quencher  5  Quencher 4  Quencher  3  0  F2  11,....-Nff  ,......-c,c,....,s~o  Quencher 2  Quencher  1 