Feb. 18,2021  91  US 2021/0048748 Al  baking such that the shrink agent may undergo crosslinking  at the resist surface as a result of the acid catalyst diffusing  from the resist layer during bake, and the shrink agent may  attach to the sidewall of the hole pattern. The bake is  preferably at a temperature of 70 to 180°  C., more preferably  80 to 170°  C., for a time of 10 to 300 seconds. The extra  shrink agent is stripped and the hole pattern is shrunk.  [0166]  Examples of the invention are given below by way  of illustration and not by way of limitation. The abbreviation  "pbw" is parts by weight.  [0167]  Quenchers 1 to 32 used in resist compositions have  the following structure. Notably, Quenchers 1 to 32 were  synthesized by neutralization reaction of an iodized aromatic  ring-containing amine compound providing the cation  shown below with an iodized or brominated phenol provid› ing the anion shown below.  EXAMPLES  Quemcher 7  Quencher 8  Quencher 9  ~o  ~NX)’  ,-<l-o  )---j’--\_j  ’\H2W  #  ~  I  I  Quencher 10  Quencher 11  Quemcher 12  Quencher 13  Quencher 1  ~o  I\  o  _;=(__  )-r-\_r  t_/~ I ~o- 1  I  Quencher 2  ~o  I\  -Q- )---/"o_/w\_Jo  Br  \.  j  0- 1  I  Quencher 3  I  I  Y-(r~=b- 0 ;  R,  o"’  O  I  I  \_  j  I  ~ $_{Br }$ Quencher4  I  I  &  &  Y-{-nr’o  "’*o  I  \__J  Br  Br  Quencher 6  -continued 