Jul. 17, 2014  164  US 2014/0199617 Al  taken as the limiting pattern collapse line width and this is  made as the indicator of pattern collapse performance. The  smaller the value, the pattern is resolved without collapse of  the finer pattern, that is, the pattern collapse performance is  good. The results obtained are shown in Table 6. Incidentally,  since Comparative Example 102 is positive development,  when exposure amount is increased from the above Eop to  make the line width thinner the minimum line width capable  of resolution without causing pattern collapse is taken as the  [0986]  Incidentally, taking the height of the resist pattern  from the surface of the substrate (when the height of the resist  pattern is not uniform, the maximum height of the resist  pattern from the surface of the substrate) as T, the line width  at the lower part of the pattern means the line width of the  resist pattern at the height of0.lxT from the surface of the  substrate. The line width at the upper part of the pattern means  the line width of the resist pattern at the height of 0.9xT from  the surface of the substrate  limiting pattern collapse line width and this is made as the  indicator of pattern collapse performance.  [0987]  As can be seen from the above table, Examples 101  to 123 achieve high sensitivity and are excellent in pattern  collapse performance and are further excellent in the form not  generating the bite at the lower part of the pattern as compared  with Comparative Example 101 wherein the low molecular  weight compound (B) according to the invention is not used  and Comparative Example 102 wherein the positive pattern is  formed with the alkali developer. That is, it is apparent that the  invention is excellent in the above performances and a highly  precise fine pattern can be stably formed in EB exposure  according to the invention.  [0988]  Further, in Examples 101 to 121 where the content  of the acid generator to all the solids content of the composi› tion is 21 % by mass or more, further higher sensitivity can be  achieved.  <Evaluation of Pattern Form (Form of Bite at the Lower Part  of the Pattern)>  [0985]  In the above Eop, a 1/1 line and space pattern having  a line width of 50 nm is observed with a scanning electron  microscope (S4800, manufactured by Hitachi Limited). The  case where bite at the lower part of the resist pattern is not  observed and the line width at the lower part of the pattern is  a line width ofl 01 % or less and 99% or more of the line width  at the upper part of the pattern is graded A, the case where  although a slight bite is observed at the lower part of the resist  pattern, the line width at the lower part of the pattern is a line  width in the range of less than 99% and 90% or more of the  line width at the upper part of the pattern is graded B, and the  case where bite at the lower part of the resist pattern is  observed and the line width at the lower part of the pattern is  less than 90% of the line width at the upper part of the pattern  is graded C. The results obtained are shown in Table 6.  [0989]  According to the invention, a pattern high in sensi› tivity, improved in pattern collapse, and having an excellent  INDUSTRIAL APPLICABILITY  TABLE 6  EB Ex osure  ----=D~ev~e=lo=p=m=e=nt~ ___  Rinsing  Results of Evaluation  Composition Developer  Example No.  101  Ral  Butyl acetate  102  Ra2  Butyl acetate  103  Ra3  Butyl acetate  104  Ra4  Butyl acetate  105  Ra5  Butyl acetate  106  Ra6  Butyl acetate  107  Ra7  Butyl acetate  108  Ra8  Butyl acetate  109  Ra9  Butyl acetate  110  Ral0  Butyl acetate  111  Rall  Butyl acetate  112  Ra12  Butyl acetate  113  Ra13  Butyl acetate  114  Ra14  Butyl acetate  115  Ra15  Butyl acetate  116  Ra16  Butyl acetate  117  Ra17  Butyl acetate  118  Ra18  Butyl acetate  119  Ra19  Butyl acetate  120  Ra20  Butyl acetate  121  Ra21  Metbyl isobutyl ketone  122  Ra22  Amyl acetate/isopropanol  (95/5)  123  Ra23  Butyl acetate-hexanol  (7/3)  Comparative  Example No.  101  Rbl  Butyl acetate  102  Rb2  2.38%TMAH  Positive/  Negative  Negative  Negative  Negative  Negative  Negative  Negative  Negative  Negative  Negative  Negative  Negative  Negative  Negative  Negative  Negative  Negative  Negative  Negative  Negative  Negative  Negative  Negative  Negative  Negative  Positive  Rinsing  Solution  Decane  1-Hexanol  2-Hexanol  4-Metbyl-2-pentanol  Decane  1-Hexanol  2-Hexanol  4-Metbyl-2-pentanol  Decane  1-Hexanol  2-Hexanol  4-Metbyl-2-pentanol  Decane  1-Hexanol  2-Hexanol  4-Metbyl-2-pentanol  1-Hexanol  Decane  Water  Sensitivity  (µC/cm 2 )  29.3  37.3  26.7  17.3  30.5  23.2  49.9  43.8  30.5  24.9  15.2  18.7  13.3  14.7  21.8  34.7  37.3  30.0  46.7  22.0  31.5  68.0  62.7  213  160  Pattern  Collapse (nm)  36.2  35.0  26.3  33.5  32.5  34.3  33.8  30.0  36.7  33.6  26.8  35.0  24.9  28.5  32.0  37.5  39.3  30.7  26.7  29.7  33.0  41.7  39.7  43.5  49.0  Pattern  Form (bite)  B  A  A  B  A  A  A  A  A  A  A  B  B  A  A  A  A  A  A  A  A  B  B  B  C 