Dec. 27, 2018  95  US 2018/0373148 Al  Quenchers: Quenchers 1 to 3 of the following structural  formulae  [0186]  Each of the resist compositions in Table 1 was spin  coated on a silicon substrate having a 20-nm coating of  silicon-containing spin-on hard mask SHB-A940 (Shin-Etsu  Chemical Co., Ltd., Si content 43 wt%) and prebaked on a  hotplate at 105°  C. for 60 seconds to form a resist film of 60  nm thick. Using an EUV scanner NXE3300 (ASML, NA  0.33,  a  0.9/0.6, quadrupole illumination), the resist film was  exposed to EUV through a mask bearing a hole pattern at a  pitch 46 nm (on-wafer size) and +20% bias. The resist film  was baked (PEB) on a hotplate at the temperature shown in  Table 1 for 60 seconds and developed in a 2.38 wt% TMAH  aqueous solution for 30 seconds to form a hole pattern  having a size of 23 nm in Examples 1 to 10 and Comparative  Examples 1 to 2 or a dot pattern having a size of 23 nm in  Example 11 and Comparative Example 3.  [0187]  The resist pattern was evaluated. The exposure  dose that provides a hole or dot pattern having a size of 23  nm is reported as sensitivity. The size of 50 holes or dots was  measured under CD-SEM (CG-5000, Hitachi High-Tech- nologies Corp.), from which a size variation  (3a)  was  computed and reported as CDU.  [0188]  The resist compositions are shown in Table 1  together with the sensitivity and CDU of EUV lithography.  TABLE 1  Example  Polymer  (pbw)  1 Polymer 1  (100)  Acid  PEB  generator  Quencher  Organic solvent temp. Sensitivity CDU  (pbw)  (pbw)  (pbw)  (" C.)  (mJ/cm 2 )  (nm)  PAGl  Quencher 1  PGMEA (400)  100  26  3.5  (30)  (4.00)  CyH (2,000)  PGME (100)  2 Polymer 2  Quencher 2  PGMEA (400)  100  23  2.4  (100)  (4.50)  CyH (2,000)  PGME (100)  3 Polymer 3  Quencher 3  PGMEA (400)  105  21  2.6  (100)  (4.50)  CyH (2,000)  PGME (100)  4 Polymer 4  Quencher 2  PGMEA (400)  100  18  2.4  (100)  (4.50)  CyH (2,000)  PGME (100)  5 Polymer 5  Quencher 2  PGMEA (400)  100  17  2.4  (100)  (4.50)  CyH (2,000)  PGME (100)  6 Polymer 6  Quencher 2  PGMEA (400)  100  16  2.5  (100)  (4.50)  CyH (2,000)  PGME (100)  7 Polymer 6  PAGl  Quencher 2  PGMEA (400)  100  13  2.8  (100)  (10)  (4.50)  CyH (2,000)  PGME (100)  8 Polymer 6  PAG2  Quencher 2  PGMEA (400)  100  12  2.6  (100)  (15)  (4.50)  CyH (2,000)  PGME (100)  Examples 1 to 11 and Comparative Examples 1 to  3  EUV Lithography Test  Quencher 1  Quencher 2  Q  Quencher 3 