Jan. 13, 2011  83  US 2011/0008728 Al  relative to 100 parts by weight of the component (A’). When  the amount of the component (B) is within the above-men› tioned range, formation of a resist pattern can be satisfactorily  performed. Further, by virtue of the above-mentioned range,  a uniform solution can be obtained and the storage stability  becomes satisfactory.  [1079]  <Component (D’)>  [1080]  In order to improve factors such as the resist pattern  shape and the post exposure stability of the latent image  formed by the pattern-wise exposure of the resist layer, in the  first positive resist composition, a nitrogen-containing  organic compound (D’) (hereafter referred to as "component  (D’)") can be added as an optional component.  [1081]  A multitude of these components (D’) have already  been proposed, and any of these known compounds may be  used. As the component (D’), the same compounds as those  for the component (D) described above in relation to the resist  composition according to the first aspect of the present inven› tion can be used.  [1082]  As the component (D’), one type of these nitrogen› containing organic compounds may be used alone, or two or  more types may be used in combination.  [1083]  The component (D’) is typically used in an amount  within a range from 0.01 to 5.0parts by weight, relative to 100  parts by weight of the component (A’).  [1084]  <Component (E’)>  [1085]  Furthermore, in the first positive resist composition,  for preventing any deterioration in sensitivity, and improving  the resist pattern shape and the post exposure stability of the  latent image formed by the pattern-wise exposure of the resist  layer, at least one compound (E’) (hereafter referred to as  "component (E’)") selected from the group consisting of an  organic carboxylic acid, or a phosphorus oxo acid or deriva› tive thereof can be added as an optional component.  [1086]  A multitude of these components (E’) have already  been proposed, and any of these known compounds may be  used. As the component (E’), the same compounds as those  for the component (E) described above in relation to the resist  composition according to the first aspect of the present inven› tion can be used.  [1087]  As the component (E’), one type of these com› pounds may be used alone, or two or more types may be used  in combination.  [1088]  As the component (E’), an organic carboxylic acid is  preferable, and salicylic acid is particularly desirable.  [1089]  The component (E’) is typically used in an amount  within a range from 0.01 to 5.0parts by weight, relative to 100  parts by weight of the component (A’).  [1090]  If  desired, other miscible additives can also be  added to the first positive resist composition. Examples of  such miscible additives include additive resins for improving  the performance of the resist film, surfactants for improving  the applicability, dissolution inhibitors, plasticizers, stabiliz› ers, colorants, halation prevention agents, and dyes.  [1091]  <Component (S’)>  [1092]  The first positive resist composition can be prepared  by dissolving the materials for the resist composition in an  organic solvent (hereafter, frequently referred to as "compo› nent (S’)").  [1093]  The component (S’) may be any organic solvent  which can dissolve the respective components to give a uni› form solution, and any one or more kinds of organic solvents  can be appropriately selected from those which have been  conventionally known as solvents for a chemically amplified  resist.  [1094]  As the component (S’), the same organic solvents as  those for the component (S3) described above in relation to  the resist composition according to the first aspect of the  present invention can be used.  [1095]  These components (S’) can be used either alone, or  in combinations of two or more different solvents.  [1096]  In the first positive resist composition, as the com› ponent (S’), propylene glycol monomethyl ether acetate (PG› MEA), propylene glycol monomethyl ether (PGME) and  ethyl lactate (EL) are preferable.  [1097]  Further, among the mixed solvents, a mixed solvent  obtained by mixing PGMEA with a polar solvent is prefer› able. The mixing ratio (weight ratio) of the mixed solvent can  be appropriately determined, taking into consideration the  compatibility of the PGMEA with the polar solvent, but is  preferably in the range ofl :9 to 9: 1, more preferably from 2:8  to 8:2.  [1098]  Specifically, when EL is mixed as the polar solvent,  the PGMEA:EL weight ratio is preferably from 1:9 to 9:1,  and more preferably from 2:8 to 8:2. Alternatively, when  PGME is mixed as the polar solvent, the PGMEA:PGME is  preferably from 1:9 to 9: 1, more preferably from 2:8 to 8:2,  and still more preferably 3:7 to 7:3.  [1099]  Further, as the component (S’), a mixed solvent of at  least one of PGMEA and EL with y-butyrolactone is also  preferable. The mixing ratio (former:latter) of such a mixed  solvent is preferably from 70:30 to 95:5.  [1100]  There are no particular limitations on the overall  amount used of the component (S’), and an amount that pro› duces a liquid having a concentration that is suitable for  application of the first positive resist composition onto a  substrate is used.  [1101]  If  desired, other miscible additives can also be  added to the chemically amplified positive resist composi› tion. Examples of such miscible additives include additive  resins for improving the performance of the resist film, sur› factants for improving the applicability, dissolution inhibi› tors, plasticizers, stabilizers, colorants, halation prevention  agents, and dyes.  [1102]  By employing the method of forming a resist pattern  according to the present invention, in a double patterning  process, it is less likely to be adversely affected by the second  patterning.  [1103]  Further, by employing the method of forming a  resist pattern according to the present invention, the differ› ence in the size of the first resist pattern becomes small before  and after the second patterning, and it becomes possible to  form a resist pattern with high resolution and excellent shape.  Furthermore, by employing the method of forming a resist  pattern according to the present invention, there is no need to  use a freezing agent or the like, which results in improved  workability.  [1104]  As the method of forming a resist pattern, a cross› line patterning method is preferable, which is a method  including: applying a positive resist composition as a first  resist composition on a substrate to form a first resist film on  the substrate; subjecting the first resist film to selective expo› sure and alkali developing to form a first line and space resist  pattern; applying the resist composition of the present inven› tion as a second resist composition on the substrate on which  the first line and space resist pattern is formed to form a 