285  US 9,323,153 B2  286  TABLE 3-continued  TABLE4  <Resist Evaluation: EUV Exposure/Alkali Development/  Positive-Tone>  The respective components shown in Table 5 below were  dissolved in the solvent shown in the same Tables to prepare  a solution having a solid content concentration of 1.5% by  mass. The solution was filtrated using a polytetrafluoroethyl› ene filter having pore size of0.1 µm  to obtain a positive-tone  resist solution.  The numerical value of"% by mass" shown in Table 5 is a  value based on the entire solid content excluding the surfac› tant of the composition. Incidentally, the content of the sur› factant is 0.01 % by mass with respect to the entire solid  content excluding the surfactant of the composition.  The positive-tone resist solution was applied on a silicon  substrate where a hexamethyldisilazane treatment has been  carried out, using a spin coater. The applied film was heated  and dried on a hotplate for 90 seconds at 120°  C. to obtain a  resist film with an average film thickness of 50 nm.  This resist film was irradiated with EUV light using an  EUV exposure apparatus. Immediately after irradiation, the  resist film was heated on a hotplate for 90 seconds at 130°  C.  After this, this resist film was developed for 60 seconds at 23 °  C. using a concentration of 2.38% by mass of an aqueous  solution of tetramethylammonium hydroxide and was dried  after being rinsed using pure water for 30 seconds. In this way,  a line-and-space pattern (line: space=  1:  1) was formed.  <Resist Evaluation:  EUV Exposure/Organic  Solvent  Development/Negative-Tone>  The respective components shown in Table 6 below were  dissolved in the solvent shown in the same Tables to prepare  a solution having a solid content concentration of 1.5% by  mass. This solution was finely filtered through a membrane  filter having a pore size of0.05  µm  to obtain a resist solution.  * 1 In Examples 13, 14 and 29 and a comparative example 4, the resist compositions were prepared by containing 5% by mass of a resin (Aa) and 58% by mass of  a resin (Ab).  * 2 In Examples 18 to 24 and 33, the resist compositions were prepared by containing 98% by mass of a resin (Ab).  * 3 In Examples 5 to 12 and a comparative example 2, the resist compositions were prepared by containing 5% by mass of a resin (Aa) and 93% by mass of a resin  (Ab).  * 4 In Examples 2 to 4, the resist compositions were prepared by containing 88% by mass of a resin (Ab) and 10% by mass of a photo-acid generator.  (EB Ex12osure/Alkali Develo12ment/Positive-tone)  Resist com12osition  Solvent  Photo-acid  Basic  Surfactant  Evaluation result  Resin  Resin (Ab)  (mass  generator  compound  (0.01%  Sensitivity  Resolution  (Aa)  ( 63% by mass)  ratio)  (35% by mass) (2% by mass)  by mass)  (µC/cm 2 )  Pattern shape  (nm)  Comparative  Ab-97  S-1/S-2  B-149  N-2  W-4  40  reverse  125.0  Example 1  (90/10)  taper  * $^{3}$Comparative  Aa-16  Ab-240  S-2/S-3  N-1  W-4  38  reverse  125.0  Example 2  (80/20)  taper  Comparative  Ab-17  S-4/S-3  B-110  N-5  W-3  41  reverse  125.0  Example 3  (80/20)  taper  *  $^{1}$Comparative  Aa-52  Ab-120  S-3/S-2  Y-70  N-3  W-2  39  reverse  125.0  Example4  (90/10)  taper  Comparative  Ab-167  S-1/S-4  Y-61  N-4  W-3  40  reverse  125.0  Example 5  (80/20)  taper  (EB Ex12osure/Organic Solvent Develo12ment/Negative-tone)  Resist com osition  Resin  Basic  (Aa)  Solvent  Photo-acid  compound Surfactant  Evaluation result  (% by  Resin (Ab)  (mass  generator  (2%by  mass)  (63% by mass)  ratio)  (% by mass)  mass)  Example44  Ab-178  S-2  B-122  AM-24  (88)  (10)  Example45  Ab-245  S-2/S-1  AM-36  (98)  (90/10)  Example46  Ab-143  S-4/S-1  B-118  AM-48  (63)  (90/10)  (35)  Example47  Ab-97  S-1/S-2  z130  AM-27  (63)  (90/10)  (35)  Example48  Ab-281  S-1/S-2  B-121  AM-43  (83)  (80/20)  (15)  Example49  Ab-282  S-1/S-2  B-181  AM-25  (63)  (50/50)  (35)  Example 50  Aa-1  Ab-283  S-1/S-2  B-180  AM-50  (10)  (68)  (60/40)  (20)  Comparative  Ab-97  S-1/S-2  z130  N-4  Example 6  (63)  (90/10)  (35)  Comparative  Ab-245  S-2/S-1  N-2  Example 7  (98)  (90/10)  (0.01% by  Rinsing Sensitivity  Pattern  Resolution  mass)  Developer  liquid  (µC/cm 2 )  shape  (nm)  W-3  G-1  G-6  15  rectangular  62.5  W-1  G-1  20  rectangular  75.0  W-3  G-1  G-5  19  rectangular  62.5  W-4  G-3  27  rectangular  87.5  W-4  G-1  25  rectangular  62.5  W-3  G-1  G-4  19  rectangular  62.5  W-4  G-2  23  rectangular  62.5  W-4  G-3  36  taper  125.0  W-1  G-1  34  taper  125.0 