135  US 9,904,167 B2  136  -continued  OH  O  0  ~#  0  ..,,..s  OH  O  0  ~~#  ..,,..s  0  ~\l  ..,,..s  0  #  (PA-16)  (PA-17)  (PA-18)  The active light sensitive or radiation sens1t1ve resin  composition of the present invention may have a hydropho› bic resin (HR) separate to the compound (B) described  above. By adding such a resin, it is possible to expect an  effect of making the pattern close to rectangular and an effect  of suppressing outgassing. In addition, it is possible to  preferably use such a resin composition in a case where  exposure is performed by filling a liquid (pure water or the  like) with a higher refractive index than air between the  photosensitive film and the lens, that is, in a case of  performing liquid dipping exposure.  The hydrophobic resin (HR) described above preferably  contains a group which has a fluorine atom, a group which  has a silicon atom, or a hydrocarbon group having 5 or more  carbon atoms in order to carry out uneven distribution on the  film surface. These groups may be present in the main chain  of the resin or may be substituted in the side chain.  Specific  examples of the hydrophobic resin (HR)  described above include the resins described in paragraphs  "0240" to "0247" of JP2010-175858A or the resins  described in paragraphs "0349" to "0354" of JP2013- 80006A.  Preferable examples of solvents to be used in the active  light sensitive or radiation sensitive resin composition of the  present invention include ethylene glycol monoethyl ether  acetate, cyclohexanone, 2-heptanone, propylene glycol  monomethyl ether (PGME, also known as l-methoxy-2- propanol), propylene glycol monomethyl ether acetate (PG› MEA, also known as l-methoxy-2-acetoxypropane), pro› pylene glycol monomethyl ether propionate, propylene  glycol  monoethyl  ether acetate,  3-methoxypropionate  methyl, 3-ethoxypropionate ethyl, methyl ~-methoxyisobu- tyrate, ethyl butyrate, propyl butyrate, methyl isobutyl  ketone, ethyl acetate, isoamyl acetate, ethyl lactate, toluene,  xylene, cyclohexyl acetate, diacetone alcohol, N-methylpyr› rolidone, N,N-dimethylformamide, y-butyrolactone, N,N- dimethylacetamide, propylene carbonate, ethylene carbon› ate, and the like.  It is possible to use these solvents alone or  in combination.  The solid content of the active light sensitive or radiation  sensitive resin composition is preferably 1 mass % to 40  mass% of the solid content concentration, more preferably  1 mass % to 30 mass %, and even more preferably 3 mass  % to 20 mass %.  The present invention also relates to a resist film formed  using the active light sensitive or radiation sensitive resin  composition of the present invention, and such a resist film  is, for example, formed by coating a support body such as a  substrate with the active light sensitive or radiation sensitive  resin composition. The thickness of the resist film is pref› erably 0.02  µm  to 0.1 µm. The coating is carried out on the  substrate using an appropriate coating method such as spin  coating, roll coating, flow coating, dip coating, spray coat› ing, doctor coating as the method for coating the substrate;  however, spin coating is preferable, and the rotation speed is  preferably 1,000 rpm to 3,000 rpm. The coating film forms  a thin film by being prebaked for 1 to 20 minutes at 60°  C.  to 150°  C., preferably for 1 to 10 minutes at 80°  C. to 120°  C.  As the material forming the substrate to be processed and  the outermost layer thereof, for example, it is possible to use  a silicon wafer in a case of a wafer for a semiconductor, and  examples of the material forming the outermost layer  include Si, Si  0 2 ,  SiN, SiON, TiN, WSi, BPSG, SOG organic  anti-reflection films, and the like.  In addition, the present invention also relates to a resist- coated mask blank (and a photomask obtained by exposing  and developing a resist-coated mask blank) coated with the  resist film obtained in the manner described above. In order  to obtain such a resist-coated mask blank, in a case where a  resist pattern is formed on a photomask blank for manufac› turing a photomask, examples of a transparent substrate to  be used include transparent substrates of quartz, calcium  fluoride, and the like. Generally, necessary functional films  such as a light-shielding film, an anti-reflection film, a phase  shift film, and additionally an etching stopper film, or an  etching mask film are laminated on the substrate. A film  which contains a transition metal such as silicon, chromium,  molybdenum, zirconium, tantalum, tungsten, titanium, nio› bium is laminated as the material of the functional film. In  addition, examples of the material to be used in the outer› most layer include material where silicon or a material  which contains oxygen and/or nitrogen in silicon is set as the  main constituent material, silicon compound material where  a material which contains transition metals in these is set as  the main constituent material, or transition metal compound  material where a material which includes one type or more  which is selected from transition metals, in particular, chro- mium, molybdenum, zirconium, tantalum, tungsten, tita› nium, niobium, and the like, or a material which includes  one or more elements selected from oxygen, nitrogen, and  carbon in the transition metals is set as the main constituent  material.  The shielding film may be a single layer, however, the  shielding film is more preferably a multi-layer structure in  which a plurality of materials are coated on top of each other.  In the case of a multi-layer structure, the film thickness of  one layer is not particularly limited; however, 5 nm to 100  nm is preferable, and 10 nm to 80 nm is more preferable. The  [8] Hydrophobic Resin  [9] Solvent 