agreement with predictions of Sec.2. In particular, the minimal value of resistance increases with temperature decrease for Mott type hopping and decreases for the Coulomb gap hop- ping. As it was noted in the Introduction, the agreement was strongly improved when we had taken into account more subtle spin effects [7], however here we will not go into these details discussed earlier. At Figs. 2,3 we present experimental results described in [11], [12] for p-GaAs/AlGaAs:Be 16 FIG. 1: Temperature behavior of magnetoresistance for bulk CdTe crystals doped by donor impurities (Cl). Fig. 1,a - the curves for the sample in the Coulomb gap regime, Fig.1, b - for the sample in the Mott regime.