3. The method of claim 1, wherein the three-dimensional master equation sim ulation is performed for one or more applied voltages less than or equal t o a built-in voltage of the disordered semiconductor device. 4. The method of claim 1, wherein the disordered semiconductor is an organic semiconductor. 5. The method of claim 1, wherein the disordered semiconductor device is selected from the group consisting of: light emitting diodes, solar cells, photodetectors, photovoltaic energy conversion devices, and light emitting field effect transistors. 6. The method of claim 1, wherein a geometry of the input specification is selected from the group consisting of: single layer structures, two layer structures, three layer structures, multi-layer structures, 2-D device geometries and 3D device geometries. 7. The method of claim 1, wherein composition parameters of the input sp ecifi cation are selected from the group consisting of: mean energy of a density of states and energy width of a density of states. 8. The method of claim 1, wherein the simulated transport results are selected from the group consisting of: current density, position-dependent current density, electron concentration, hole concentration, current-voltage relations, position- dependent recombination rate, light emission(voltage) relations, voltage (light absorption) relations, light emission(current density) relations and current clen- sity (light absorption) relations. 9. The method of claim 1, wherein the input specihcation is a multi layer struc ture, wherein the disordered semiconductor device is an organic light emitting diode, wherein a first layer is a metal cathode, wherein a second layer is an organic semiconductor electron transport layer (ETL), wherein a third layer is an organic semiconductor emissive layer (EML), wherein a fourth layer is an organic semiconductor hole transport layer (HTL), wherein a fifth layer is an indium tin oxide layer and wherein a sixth layer is a glass substrate. 10. The method of claim 9, further comprising automatic optimization of at least thicknesses of the ETL, EML and LITL to maximize light output.