361  US 9,411,230 B2  362  TABLE 4-continued  As apparent from the Table above, in Examples 1 to 24,  high sensitivity, high resolution and high line width rough› ness (LWR) performance could be satisfied all at the same  time at remarkably high levels.  In particular, as seen from comparison between Examples  4, 6, 11 and 15 and Comparative Examples 3, 4, 5 and6where  positive development with an alkali developer was performed  using the same resist compositions as in those Examples, a 30  pattern with high resolution, high sensitivity and high LWR  performance could be formed by employing the pattern form› ing method of the present invention using an organic devel› oper. This is considered to result because as described above,  in comparison with the case using an alkali developer, use of  35  an organic developer brings reduction in the capillary force  imposed on the sidewall of the pattern and in turn, the pattern  collapse can be prevented.  Also, as compared with Comparative Examples 1 and 2  40  ( corresponding to Examples 1 and 17 described in JP-A- 2010-217884), in Examples using a resin containing the  repeating unit (R), a pattern with high resolution and high  LWR performance could be formed. This is considered to be  a result brought about by factors including the followings.  45  Since the resin has the repeating unit (R), that is, a structural  moiety capable of decomposing upon irradiation with an  electron beam or an extreme ultraviolet ray is bonded in the  resin, (i) the diffusion length of the acid generated can be  reduced, (ii) the dissolution contrast for the developer can be 50  enhanced due to reduction in the solubility of the exposed  area for an organic solvent-containing developer, and (iii) the  structural moiety capable of decomposing upon irradiation  with an actinic ray or radiation to generate an acid can be  uniformly distributed in the resist film.  Furthermore, it has been found that from the standpoint of  enhancing the sensitivity, the resin more preferably contains  a repeating unit having an aromatic ring other than the repeat› ing unit (R). This is considered because by having an aromatic  ring, the generation efficiency of secondary electron by the 60  irradiation with an electron beam is enhanced, as a result,  increase of the generated acid and elevation of the sensitivity  are brought about.  Also in the case of using a developer other than butyl  acetate or using a rinsing solution other than 4-methyl-2- pentanol, the same excellent effects as in Examples above are  obtained.  Preparation of an electron beam-sensitive or extreme ultra› violet-sensitive resin composition and pattern formation were  performed in the same manner as in Example 101 except for  changing the formulation as shown in the Table below, per› forming the development with an aqueous alkali solution  (TMAH, an aqueous 2.38 mass % tetramethylammonium  The resist film-coated wafer obtained in ( 4) above was  patternwise exposed through an exposure mask (line/  space=l/1) by using an EUV exposure apparatus (Micro  Exposure Tool, manufactured by Exitech, NA: 0.3, quadru› pole, outer sigma: 0.68, inner sigma: 0.36). After the irradia› tion, the wafer was heated on a hot plate at 110°  C. for 60  seconds, then developed by puddling butyl acetate as an  organic developer for 30 seconds, rinsed by using 4-methyl- 2-pentanol as a rinsing solution, spun at a rotational speed of  4,000 rpm for 30 seconds and baked at 90°  C. for 60 seconds  to obtain a resist pattern composed of a 1:1 line-and-space  pattern having a line width of 50 nm.  ( 4) Preparation of Coating Solution of Electron Beam-Sensi› tive or Extreme Ultraviolet-Sensitive Resin Composition, and  Coating  The coating solution composition according to the formu› lation shown in the Table below was microfiltered through a  membrane filter having a pore size of 0.05 µm  to obtain an  electron beam-sensitive or extreme ultraviolet-sensitive resin  composition (resist composition) solution.  This electron beam-sensitive or extreme ultraviolet-sensi- tive resin composition solution was coated on a 8-inch Si  wafer previously subjected to  a hexamethyldisilazane  (HMDS) treatment, by using a spin coater, ACT-12, manu› factured by Tokyo Electron Ltd. and dried on a hot plate at  100°  C. for 60 seconds to obtain a resist film having a thick› ness of 50 nm.  (5) EUV Exposure and Development  Examples 101 to 124 and Comparative Examples  101 and 102  Extreme Ultraviolet (EUV) Exposure  Extreme Ultraviolet (EUV) Exposure  Comparative Examples 103 to 106  EB  exposure  Example 21  A-21  SL-1/SL-4  N-5  W-2  (0.983 g)  (70/30)  (12mg)  Example 22  A-22  SL-1  N-6  W-1  (0.991 g)  (4mg)  Example 23  A-23  SL-1/SL-5  N-7  W-1  (0.991 g)  (80/20)  (4mg)  Example 24  A-24  SL-1/SL-5  N-7  W-1  (0.991 g)  (80/20)  (4mg)  Comparative  RA-1  PAG-1  SL-1  N-9  W-1  Example 1  (0.938 g)  (0.060 g)  (1mg)  Comparative  RA-2  PAG-2  SL-1  N-9  W-1  Example 2  (0.870 g)  (0.060 g)  (10mg)  Comparative  A-4  SL-1/SL-3  N-5  W-1  Example 3  (0.590 g)  (70/30)  (3mg)  Comparative  A-6  SL-1/SL-5  N-5  W-1  Example4  (0.991 g)  (80/20)  (4mg)  Comparative  A-11  SL-2/SL-4  N-2  W-2  Example 5  (0.991 g)  (75/25)  (4mg)  Comparative  A-15  SL-1/SL-5  N-7  W-1  Example 6  (0.991 g)  (80/20)  (4mg)  12.6  32.0  3.8  11.9  32.5  3.7  11.2  30.0  3.6  11.4  30.0  3.7  15.0  37.5  4.8  Example 1 ofJP-A-2011- 217884  14.5  50.0  4.7  Example 17 ofJP-A-2011- 217884  48.2  55.0  6.0  alkali development  (positive development)  46.2  54.0  5.7  alkali development  (positive development)  49.1  60.5  5.9  alkali development  (positive development)  38.5  41.0  4.9  Alkali development  (positive development) 