US  2020/0117085  Al  12  Apr. 16, 2020  substituted or unsubstituted Cl to C20 alkylene group  and  Rd  is a substituted or unsubstituted Cl to C20 alkyl  group,  R$^{2 }$to R 4  are each independently selected from-OR  a  and  ---OC(=O)Rb,  Ra  is selected from a substituted or unsubstituted Cl to  C20 alkyl group, a substituted or unsubstituted C3 to  C20 cycloalkyl group, a substituted or unsubstituted C2  to C20 alkenyl group, a substituted or unsubstituted C2  to C20 alkynyl group, a substituted or unsubstituted C6  to C30 aryl group, and combinations thereof, and  Rb  is selected from hydrogen, a substituted or unsubsti› tuted Cl to C20 alkyl group, a substituted or unsub› stituted C3 to C20 cycloalkyl group, a substituted or  unsubstituted C2 to C20 alkenyl group, a substituted or  unsubstituted C2 to C20 alkynyl group, a substituted or  unsubstituted C6 to C30 aryl group, and combinations  thereof.  2.  The semiconductor resist composition of claim  1,  wherein R $^{1 }$is selected from a substituted or unsubstituted Cl  to Cl 0 alkyl group, a substituted or unsubstituted C3 to C20  cycloalkyl group, a substituted or unsubstituted C3 to C20  alkenyl group, a substituted or unsubstituted C3 to C20  alkynyl group, and  -Rc-0-Rd,  wherein Rc is a s~b_sti› tuted or unsubstituted Cl to C20 alkylene group and R 1s a  substituted or unsubstituted Cl to C20 alkyl group.  3.  The semiconductor resist composition of claim  1,  wherein  Ra  is selected from a substituted or unsubstituted Cl  to Cl 0 alkyl group, a substituted or unsubstituted C3 to C20  cycloalkyl group, a substituted or unsubstituted C2 to CS  alkenyl group, a substituted or unsubstituted C2 to CS  alkynyl group, and a substituted or unsubstituted C6 to C30  arylalkyl group, and  Rb  is selected from hydrogen, a sub› stituted or unsubstituted Cl to Cl0 alkyl group, a substituted  or unsubstituted C3 to C20 cycloalkyl group, a substituted or  unsubstituted C2 to CS alkenyl group, a substituted or  unsubstituted C2 to CS alkynyl group, and a substituted or  unsubstituted C6 to C30 arylalkyl group.  4.  The semiconductor resist composition of claim  1,  wherein at least one of R 2  to R 4  is  ---OC(=O)Rb.  5.  The semiconductor resist composition of claim  1,  wherein the organometallic compound is represented by at  least one of Chemical Formula 2 to Chemical Formula  4:  wherein, in Chemical Formula 2 to Chemical Formula  4,  R 1  is selected from a substituted or unsubstituted Cl to  C20 alkyl group, a substituted or unsubstituted C3 to  C20 cycloalkyl group, a substituted or unsubstituted C2  to C20 alkenyl group, a substituted or unsubstituted C2  to C20 alkynyl group, a substituted or unsubstituted C6  to C30 aryl group, a substituted or unsubstituted C6 to  C30 benzyl group, and-Rc-O-Rd, wherein Rc is a  substituted or unsubstituted Cl to C20 alkylene group  and  Rd  is a substituted or unsubstituted Cl to C20 alkyl  group,  R 12  R 13  R 14  and R 33  are each independently selected  f;om  ~  sub~tituted or unsubstituted Cl to Cl0 alkyl  group, a substituted or unsubstituted C3 to C20  cycloalkyl group, a substituted or unsubstituted C2 to  CS alkenyl group, a substituted or unsubstituted C2 to  CS alkynyl group, and a substituted or unsubstituted C6  to C30 arylalkyl group, and  R 22  R 23  R 24  R 32  and R 34  are each independently  s~lected fro~ hych-ogen, a substituted or unsubstituted  Cl to Cl0 alkyl group, a substituted or unsubstituted  C3 to C20 cycloalkyl group, a substituted or unsubsti› tuted C2 to CS alkenyl group, a substituted or unsub› stituted C2 to CS alkynyl group, and a substituted or  unsubstituted C6 to C30 arylalkyl group.  6.  The semiconductor resist composition of claim  5,  wherein the organometallic compound is represented by at  least one of Chemical Formula 3 to Chemical Formula  4:  -continued  Chemical Formula 4  Chemical Formula 2  Chemical Formula 3  Chemical Formula 3  Chemical Formula 4 