US 9,869,931 B2  166  165  TABLE 2-continued  Polymer  Metal complex  (pbw)  (pbw)  28 Polymer 1  barium 4-hydroxy- (100)  2,3  ,5  ,6-tetrafluoro benzenesulfonate  (7.0)  29 Polymer 1 barium tetrakis[3,5- (100)  bis(trifluoromethyl)phenyl]borate  (9.5)  30 Polymer 1 barium tetrakis(2,3,4,5,6- (100)  pentafluorophenyl )borate  (10.0)  31 Polymer 1 cesium (1,1,2,2,3,3- (100)  hexafluoropropane-1,3-disulfonimide)  (5.0)  32 Polymer 1  cesium 4-hydroxy- (100)  2,3  ,5  ,6-tetrafluoro benzenesulfonate  (6.8)  33 Polymer 1 cesium  (100)  tetrakis(pentafluorophenyl)borate  (10.0)  34 Polymer 1  cesium 4-cyclohexylcarbonyloxy- (100)  2,3  ,5  ,6-tetrafluoro benzenesulfonate  (6.0)  35 Polymer 1  cesium 4-(1-adamentylcarbonyloxy)- (100)  2,3  ,5  ,6-tetrafluoro benzenesulfonate  (8.0)  36 Polymer 1  cesium 4-phenylcarbonyloxy- (100)  2,3  ,5  ,6-tetrafluoro bezenesulfonate  (6.0)  37 Polymer 1  cesium 4-cyclohexylsulfonyl- (100)  2,3  ,5  ,6-tetrafluoro benzenesulfonate  (6.0)  Comparative Resist  Polymer 1  (100)  2 Polymer 1  (100)  3 Polymer 1  (100)  Acid  generator  (pbw)  Quencher  (pbw)  Amine!  (1.3)  Amine!  (1.3)  Amine!  (1.3)  cesium  pivalate  (0.8)  cesium  pivalate  (0.8)  Amine!  (1.3)  Amine!  (1.3)  Amine!  (1.3)  Amine!  (1.3)  Amine!  (1.3)  Amine!  (1.3)  Amine!  (0.6)  cesium  pivalate  (1.2)  Organic  solvent  (pbw)  PGMEA (1,000)  CyH (1,000)  GBL (200)  PGMEA (1,000)  CyH (1,000)  GBL (200)  PGMEA (1,000)  CyH (1,000)  GBL (200)  PGMEA (1,000)  CyH (1,000)  GBL (200)  PGMEA (1,000)  CyH (1,000)  GBL (200)  PGMEA (1,000)  CyH (1,000)  GBL (200)  PGMEA (1,000)  CyH (1,000)  GBL (200)  PGMEA (1,000)  CyH (1,000)  GBL (200)  PGMEA (1,000)  CyH (1,000)  GBL (200)  PGMEA (1,000)  CyH (1,000)  GBL (200)  PGMEA (1,000)  CyH (1,000)  GBL (200)  PGMEA (1,000)  CyH (1,000)  GBL (200)  PGMEA (1,000)  CyH (1,000)  GBL (200)  TABLE 3  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20  Resist  Resist 1  Resist 2  Resist 3  Resist 4  Resist 5  Resist 6  Resist 7  Resist 8  Resist 9  Resist 10  Resist 11  Resist 12  Resist 13  Resist 14  Resist 15  Resist 16  Resist 17  Resist 18  Resist 19  Resist 20  PEB temp.  Sensitivity  ( 0  c.)  (µC/cm 2 )  85  80  85  80  80  85  85  85  85  85  85  85  85  85  85  85  85  85  85  80  23.5  28.5  22.0  24.0  22.0  22.0  22.0  25.0  26.0  25.0  23.0  24.0  22.0  26.0  25.0  24.0  24.0  21.0  22.0  26.0  LWR  (nm)  6.9  5.3  6.1  5.5  6.1  5.2  6.1  5.7  6.5  6.2  5.9  5.6  6.0  6.5  6.1  6.4  5.4  5.9  5.8  4.9  Examples 1 to 37 & Comparative Examples 1 to 3  EB Writing Test  Using a coater/developer system Clean Track Mark  5 (Tokyo Electron Ltd.), the positive resist composition  was spin coated onto a silicon substrate ( diameter 6  inches, vapor primed with hexamethyldisilazane (HMDS))  and pre-baked on a hot plate at 110°  C. for 60 seconds  45 to form a resist film of 70 nm thick. Using a system 50  HL-S00D (Hitachi Ltd.) at a HV voltage of 50 keV, the  resist film was exposed imagewise to EB in a vacuum  chamber.  Using Clean Track Mark 5, immediately after the image- wise exposure, the resist film was baked (PEB) on a hot plate  at the temperature shown in Tables 3 and 4 for 60 seconds  and puddle developed in a 2.38 wt% tetramethylammonium  hydroxide (TMAH) aqueous solution for 30 seconds to form  a positive pattern.  Resolution is a minimum size at the exposure dose  (sensitivity) that provides a  1:  1 resolution of a 100-nm  line-and-space pattern. The 100-nm line-and-space pattern  was measured for line width roughness (LWR) under SEM.  The resist composition is shown in Tables 3 and 4 along  with the sensitivity and LWR of EB lithography. 