122  US 8,546,063 B2  121  (Al)  A  (  H2  I \  ---tc  -Cf- (1)  b(R)  (OH)$_{0 }$ (1) a process of forming a film with an actinic ray-sensitive  or radiation-sensitive resin composition comprising a  resin which contains an acid-decomposable repeating  unit and is capable of decreasing the solubility in an  organic solvent by the action of an acid;  (2) a process of exposing the film with an electron beam or  an EUV ray; and  ( 4) a process of developing the film with a developer con› taining an organic solvent,  wherein the actinic ray-sensitive or radiation-sensitive  resin composition comprises:  (A) the resin containing an acid-decomposable repeating  unit and being capable of decreasing the solubility in an  organic solvent by the action of an acid;  (B) a compound generating an acid upon irradiation with 15  an actinic ray or radiation; and  (C) a solvent;  and further wherein the resin (A) is a resin containing from  1 to 40 mo! % of a repeating unit represented by the  following formula (1 ):  A represents a hydrogen atom, an alkyl group, a cycloalkyl  group, a halogen atom, or a cyano group;  R  represents a halogen atom, an alkyl group, a cycloalkyl  group, an aryl group, an alkenyl group, an aralkyl group,  an alkoxy group, an alkylcarbonyloxy group, an alkyl› sulfonyloxy group, an alkyloxycarbonyl group or an  aryloxycarbonyl group, and when two or more R’s are  present, each R may be the same as or different from  every other R or when two or more R’s are present, they  may form a ring in combination with each other;  a represents an integer of 1 to 3; and  b represents an integer ofO to (3-a).  2.  The pattern-forming method as claimed in claim  1,  fur› ther comprising:  a process of developing the film with an alkali aqueous  solution.  3.  The pattern-forming method as claimed in claim  1,  wherein  the organic solvent contained in the developer used in the  process ( 4) is one or more solvents selected from the  group consisting of an ester solvent, a ketone solvent, an  alcohol solvent, an amide solvent, an ether solvent, and  a hydrocarbon solvent.  4.  The pattern-forming method as claimed in claim  1,  wherein  the organic solvent contained in the developer used in the  process (4) is a solvent represented by the following  formula (Sl):  wherein  each of R and R’ independently represents a hydrogen 65  atom, an alkyl group, a cycloalkyl group, an alkoxy  group, an alkoxycarbonyl group, a carboxyl group, a  hydroxyl group, a cyano group, or a halogen atom, and R  and R’ may be bonded to each other to form a ring.  5.  The pattern-forming method as claimed in claim  3,  wherein  the organic solvent contained in the developer used in the  process (4) is a solvent represented by the following  formula (S2):  wherein  6.  The pattern-forming method as claimed in claim  1,  wherein  the organic solvent contained in the developer used in the  process ( 4) is one or more solvents selected from the  group consisting ofbutyl acetate, pentyl acetate, isopen› tyl acetate, propylene glycol monomethyl ether acetate,  and anisole.  each of R" and R"" independently represents a hydrogen  atom, an alkyl group, a cycloalkyl group, an alkoxy  group, an alkoxycarbonyl group, a carboxyl group, a  hydroxyl group, a cyano group, or a halogen atom, and  R" and R"" may be bonded to each other to form a ring;  and  R"’ represents an alkylene group or a cycloalkylene group.  7.  The pattern-forming method as claimed in claim  1,  fur› ther comprising:  (5) a process of rinsing the film with a rinsing liquid con› taining an organic solvent after the process (4).  8.  The pattern-forming method as claimed in claim  7,  wherein  the organic solvent contained in the rinsing liquid used in  the process ( 5) is one or more solvents selected from the  group consisting of a monohydric alcohol and a hydro› carbon solvent.  9.  The pattern-forming method as claimed in claim  7,  wherein  the organic solvent contained in the rinsing liquid used in  the process ( 5) is one or more solvents selected from the  group consisting of 1-hexanol, 4-methyl-2-pentanol,  and decane.  10.  The pattern-forming method as claimed in claim  1,  further comprising:  (3) a baking process between the exposure process (2) and  the development process (4).  11.  The pattern-forming method as claimed in claim  1,  wherein  the resin (A) further contains a repeating unit represented  by the following formula (AI):  wherein  R’’-----(_;(=0)---0-R’’’---O-R’’’’  (S2)  wherein  T represents a single bond or a divalent linking group; and  each ofRxi, Rx$_{2 }$and Rx$_{3 }$independently represents an alkyl  group or a cycloalkyl group, and Rx$_{2 }$ and Rx$_{3 }$ may be  bonded to each other to form a cyclic structure.  Xa$_{1 }$ represents a hydrogen atom or an alkyl group;  (Sl) 