current is of the order of few nA. This aspect represents the major difference between our experiment and those reported in the Ref. [16] where the current was of the order of µA . We measured the effective generalized temperature of the electron gas by studying the B field dependence of the ratio between the occupancies in the time domain. The trap is a paramagnetic center with one unpaired electron, capable of capturing and emitting a second electron (1 → 2). Such conclusion is provided by the measurement of the characteristic times τ$_{c}$ (capture) and τ$_{e}$ (emission) as a function of the gate voltage V$_{G}$ and of the magnetic field up to 3 T at the nominal temperature of 310 mK.[13] The ratio between the probabilities of realization of one and two particles occupancy of a mesoscopic system constituted by a cell in thermal and particle exchange with a few electron gas of N identical particles at the generalized temperature Θ is described by the Equation where β = ( k$_{B}$ Θ) − $^{1}$, µ is the chemical potential, Δ U is the charging energy when two electrons occupy the point defect, Δ E$_{L}$ is the energy gain of the lattice when the second electron is captured, and N is the number of electrons of the dilute gas.[8] The expression Eq. 1 follows from the experimental details of the mechanisms involved in low temperature RTS. At low temperature the 2DES is weakly coupled with the crystal [10]. Phonons are involved in the emission and capture of one electron from the defect and the relaxation of the crystal implies a change of energy of S ¯ hω where S is the Huang-Rhys factor and ω is the average phonon frequency in the configuration coordinate picture [14]. We identify the energy gain of the lattice when an electron is captured with the Huang-Rhys factor Δ E$_{L}$ = S ¯ hω . Similarly to the charging energy Δ U of the electrostatic potential of the defect, Δ E$_{L}$ can be accounted for a negative variation of the electron system Gibbs free energy. Under the ergodic assumption, the ratio between the average occupation times equals the ratio between the occupation probabilities, so the experimentally accessible characteristic times provide information on the statistics via: p (1) /p (2) = τ$_{c}$/τ$_{e}$ . The ratio τ$_{c}$/τ$_{e}$ experimentally observed as a function of the magnetic field B is reported in Figure 4. The deviation from a pure exponential trend with respect to the B field reveals that both the singlet and the triplet states are accessible at sufficiently high magnetic field.[13] The contribution of the energy shift from the single electron occupancy to the two electrons occupancy of the point defect Δ$_{12}$ = Δ E$_{L}$ + Δ U is temperature independent. Therefore the magnetic field dependence of 4 p (1) p (2) = 2 e β ( E T +Δ E L +Δ U$_{−}$µ ( N ) ( 1+ 3 2 N )) (1)