GLYPH<s48> GLYPH<s49> GLYPH<s32> GLYPH<s32> GLYPH<s99>GLYPH<s117>GLYPH<s114>GLYPH<s114>GLYPH<s101>GLYPH<s110>GLYPH<s116> GLYPH<s116>GLYPH<s105>GLYPH<s109>GLYPH<s101> FIG. 1: A simple representation of a random telegraph signal caused by sucessive captures and emissions of charge carriers by a trap in the current of a CMOS transistor. process governed by rates τ$_{c}$ and τ$_{e}$ , where the capture occurs with probability p (0 → 1) dt = τ − 1 c dt and and emission p (1 → 0) dt = τ − 1 e dt Such rates τ$_{c}$ and τ$_{e}$ can be defined as the time average in state 1 and state 0 respectively: τ$_{c}$ = 〈 t 〉$_{1}$ = ∫ ∞ 0 t P$_{1}$ ( t ) dt and τ$_{e}$ = 〈 t 〉$_{0}$ = ∫ ∞ 0 t P$_{0}$ ( t ) dt , where P$_{1}$ ( t ) is the probability of permanency in state 1 and P$_{0}$ ( t ) the respective amount for state 0. Naturally P$_{1}$ ( t ) = 1 /τ$_{c}$ · e − t/τ$_{c}$ and P$_{0}$ ( t ) = 1 /τ$_{e}$ · e − $^{t/τ$_{e}$}$. If the number of trapped charge carriers increases over time, a decrease of the current may be observed. This is an aging effect usually called bias temperature instability (n- or p-bti), since it depends on bias (Fermi level) and temperature, as discussed below. In this context the degradation of a MOS transistor can be measured as the number of occupied traps and the dynamics of this occupation must be better understood. In this paper 3