The positive resist solution prepared was uniformly  applied on a hexamethyldisilazane-treated silicon substrate  by using a spin coater and dried by heating on a hot plate at  120°  C. for 90 seconds. Incidentally, the thickness of the  coated film shown in Table 3 is the film thickness after drying  by heating.  [Exposure]  [Coating of Resist]  48  US 8,906,600 B2  47  The resist film was exposed to a line pattern (length direc- tion: 0.5 mm, number oflines drawn: 40) having a line width  of20 to 30 nm in steps of2.5 nm by using an electron beam  irradiation apparatus (JBX6000, manufactured by JEOL,  accelerating voltage: 50 keV) and varying the irradiation  dose.  [Post-Exposure Baking]  Immediately after the irradiation, the resist film was heated  on a hot plate at 110°  C. for 90 seconds.  [Development]  1. Shower Development  Using a shower-type developing apparatus (ADE3000S,  manufactured by ACTES), development was performed by  spraying and ejecting the alkali developer (23°  C.) shown in  Table 3 at a flow rate of 200 mL/min for the time shown in  Table 3 while rotating the wafer at 50 revolutions (rpm).  Thereafter, a rinsing treatment was performed by spraying  and ejecting pure water used as the rinsing solution (23 °  C.) at  a flow rate of 200 mL/min for 30 seconds while rotating the  wafer at 50 revolutions (rpm).  Finally, the wafer was dried by high-speed spinning at  2,500 revolutions (rpm) for 60 seconds.  2. Puddle Development  Using a shower-type developing apparatus (ADE3000S,  manufactured by ACTES), the alkali developer (23° C.)  shown in Table 3 was sprayed and ejected at a flow rate of200  mL/min for 5 seconds while rotating the wafer at 50 revolu› tions (rpm), to raise the developer on the wafer. Subsequently,  rotation of the wafer was stopped, and development was  performed by leaving the wafer to stand still for the time  shown in Table 3.  Thereafter, a rinsing treatment was performed by spraying  and ejecting pure water used as the rinsing solution (23 °  C.) at  a flow rate of 200 mL/min for 30 seconds while rotating the  wafer at 50 revolutions (rpm).  The alkali development time shown in Table 3 was deter› mined by the following method.  A composition where out of the composition components  shown in Table 2, the polymer compound was changed to the  polymer compound before acetal protection, was prepared.  As for Comparative Example 6, the polymer compound was  synthesized by using methacrylic acid in place of tert-butyl  methacry late.  The composition was uniformly coated on a hexamethyl- disilazane-treated silicon substrate by using a spin coater and  dried by heating on a hot plate under the same conditions as  above to prepare a wafer coated with a composition.  Subsequently, the wafer was developed under the condi› tions shown in Table 3 and after the completion of develop- ment, the film thickness of the wafer was measured. The  development time required when the alkali developer was  used in each concentration was determined by rating that the  wafer with remaining of the resist was Band the wafer with› out remaining of the resist was A. As Reference Example, the  results of determining the development time described in  Example 2 are shown in Table 4.  Incidentally, in Table 3, the amount added shown in the  column of Other Additives is the value in terms of mass  %  based on the entire mass of the alkali developer. Also, in the  Tables below, TMAH means an aqueous tetramethylammo› nium hydroxide solution, and Surfynol 440 means Surfynol  440 (produced by Nissin Chemical Industry Co., Ltd.).  Resist patterns were formed using Compositions 1 to 10  shown in Table 2 by the following operation. Details of the  conditions for resist pattern formation are shown in Table 3.  Examples 1 to 15 and Comparative Examples 1 to 6  EB Exposure Evaluation 1  -continued  p  --0-s+  b  -0  -p  $^{0-s }$p  -0  (B68)  (B69)  <(C) Basic Compound>  TBAH: Tetrabutylammonium hydroxide  DBN: 1,5-Diazabicyclo[ 4.3.0]non-5-ene  TDA: Tri-n-decylamine  <Surfactant>  W-1: Megaface Fl 76 (produced by DIC Corporation)  W-2: PF6320 (produced by OMNOVA)  <Solvent>  PGMEA: Propylene glycol monomethyl ether acetate  PGME: Propylene glycol monomethyl ether  EL: Ethyl lactate 