US 2020/0050105 Al  105  Feb. 13, 2020  Comparative Quencher 5  Comparative Quencher 6  0--{  Comparative Quencher 7  Comparative Quencher 9  -continued  Blend Quencher 1  Blend Quencher 2  Q  (Ys~  ~  (2) EUV Lithography test  [0200]  Each of the resist compositions in Tables 1 to 3 was  spin coated on a silicon substrate having a 20-nm coating of  silicon-containing spin-on hard mask SHB-A940 (Shin-Etsu  Chemical Co., Ltd., silicon content 43 wt%) and prebaked  on a hotplate at 105°  C. for 60 seconds to form a resist film  of 60 nm thick. Using an EUV scanner NXE3300 (ASML,  NA 0.33, o0.9/0.6, quadrupole illumination), the resist film  was exposed to EUV through a mask bearing a hole pattern  at a pitch 46 nm (on-wafer size) and +20% bias. The resist  film was baked (PEB) on a hotplate at the temperature  shown in Tables 1 to 3 for 60 seconds and developed in a  2.38 wt % TMAH aqueous solution for 30 seconds to form  a hole pattern having a size of 23 nm in Examples 1 to 21,  Examples 23 to 33, and Comparative Examples 1 to 6 and  8 or a dot pattern having a size of 23 nm in Example 22 and  Comparative Example 7.  [0201]  The resist pattern was evaluated using CD-SEM  (CG-5000, Hitachi High-Technologies Corp.). The exposure  dose that provides a hole or dot pattern having a size of 23  nm is reported as sensitivity. The size of 50 holes in that dose  was measured, from which a size variation  (3a)  was com› puted and reported as CDU.  [0202]  The resist composition is shown in Tables 1 to 3  together with the sensitivity and CDU of EUV lithography.  Polymer  (pbw)  Example  1  Polymer 1  (100)  2  Polymer 1  (100)  3  Polymer 1  (100)  Acid  generator  Quencher  Organic solvent PEB temp. Sensitivity CDU  (pbw)  (pbw)  (pbw)  (" c.)  (mJ/cm 2 )  (nm)  PAG 1  Quencher 1  PGMEA (400)  100  26  2.6  (30)  (6.61)  CyH (2,000)  PGME (100)  PAG 2  Quencher 2  PGMEA (400)  100  26  2.5  (30)  (6.12)  CyH (2,000)  PGME (100)  PAG 2  Quencher 3  PGMEA (400)  100  21  2.6  (30)  (11.27)  CyH (2,000)  PGME (100)  TABLE 1  -continued  Comparative Quencher 4  _Q  0  0-6s ~o  I~  # 