Feb.4,2021  113  US 2021/0033970 Al  -continued  Comparative Quencher 3  ri  0- y~ l  s  ~’  6  o~so;  Comparative Quencher 4  ri  0- y~o  s  o- ~  #  OH  Comparative Quencher 5  _  Q  _  0  0-6s Q-{  I  ~  OH  #  Comparative Quenher 6  Comparative Quencher 7  0--(  -continued  Blend Quencher 1  Blend Quencher 2  Blend Quencher 3  I  I  Y-<  I  (2) EUV Lithography Test  [0177]  Each of the resist compositions in Tables 1 to 4 was  spin coated on a silicon substrate having a 20-nm coating of  silicon-containing spin-on hard mask SHB-A940 (Shin-Etsu  Chemical Co., Ltd., silicon content 43 wt%) and prebaked  on a hotplate at 105°  C. for 60 seconds to form a resist film  of 60 nm thick. Using an EUV scanner NXE3300 (ASML,  NA 0.33,  a  0.9/0.6, quadrupole illumination), the resist film  was exposed to EUV through a mask bearing a hole pattern  at a pitch 46 nm (on-wafer size) and +20% bias. The resist  film was baked (PEB) on a hotplate at the temperature  shown in Tables 1 to 4 for 60 seconds and developed in a  2.38 wt % TMAH aqueous solution for 30 seconds to form  a hole pattern having a size of 23 nm in Examples 1 to 23,  Examples 25 to 43, and Comparative Examples 1 to 6 or a  dot pattern having a size of 23 nm in Example 24 and  Comparative Example 7.  [0178]  The resist pattern was observed under CD-SEM  (CG-5000, Hitachi High-Technologies Corp.). The exposure  dose that provides a hole or dot pattern having a size of 23  nm is reported as sensitivity. The size of 50 holes or dots in  that dose was measured, from which a size variation  (3a)  was computed and reported as CDU.  [0179]  The resist composition is shown in Tables 1 to 4  together with the sensitivity and CDU of EUV lithography. 