US 20190010119Al  c19)  United States  c12)  Patent Application Publication  SUZUKI et al.  c10)  Pub. No.: US 2019/0010119 Al  (43)  Pub. Date:  Jan. 10, 2019  (54)  RESIST COMPOSITION AND RESIST  PATTERNING PROCESS  (71)  Applicant:  SHIN-ETSU CHEMICAL CO., LTD.,  Tokyo (JP)  (72)  Inventors:  Takahiro SUZUKI,  Joetsu-shi (JP);  Daisuke DOMON,  Joetsu-shi (JP);  Masaaki KOTAKE,  Joetsu-shi (JP);  Keiichi MASUNAGA,  Joetsu-shi (JP);  Satoshi WATANABE,  Joetsu-shi (JP)  (73)  Assignee:  SHIN-ETSU CHEMICAL CO., LTD.,  Tokyo (JP)  (21)  Appl. No.:  16/012,124  (22)  Filed:  Jun. 19, 2018  (51)  Int. Cl.  (52)  U.S. Cl.  CPC ..........  C07C 309/42  (2013.01);  C07C 309125  (2013.01);  C07C 309/29  (2013.01);  C07C  309/35  (2013.01);  C07C 309/38  (2013.01);  G03F 710397  (2013.01);  C07C 309/44  (2013.01);  C07C 309/59  (2013.01);  C07C  323166  (2013.01);  G03F 710045  (2013.01);  G03F 710382  (2013.01);  C07C 309/39  (2013.01)  (57)  ABSTRACT  (30)  Foreign Application Priority Data  Publication Classification  The present invention provides a resist composition, includ› ing: (A) a sulfonium salt containing an anion and a cation,  the cation including a partial structure shown by the follow› ing general formula (Al); and (B) a polymer compound  containing a repeating unit shown by the following general  formula (Bl). The present invention provides a resist com› position that causes few defects and is excellent in lithog› raphy performance, having regulated acid diffusion, in pho› tolithography using a high energy beam as a light source,  and a resist patterning process using this resist composition.  Jul. 4, 2017  (JP) ................................. 2017-131534  C07C 309/42  C07C 309125  C07C 309/29  C07C 309/35  C07C 309/38  C07C 309/39  C07C 309/44  C07C 309/59  C07C 323166  G03F 71004  G03F 71038  G03F 71039  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  Ra  Rfa  *-L!a_A!a++o-RXa  Rb  RJb  (Al)  (Bl) 