264  263  US 9,423,690 B2  wherein in Formula (2),  9.  The pattern forming method according to claim  1,  wherein the compound (B) is a compound represented by  Formula (3-1) or (3-2):  (3-1)  (3-2)  wherein in Formula (3-1),  L$_{3 }$ and L$_{4 }$ each independently represent a single bond or  a divalent linking group,  Y represents an atomic group capable of forming a lactone  structure, and  Re represents a hydrogen atom, an alkyl group, a cyano  group or a halogen atom.  Xfs each independently represents a fluorine atom or an  alkyl group substituted with at least one fluorine atom,  Ru and R$_{12 }$ each independently represent a hydrogen  atom, a fluorine atom or an alkyl group, and when a  plurality of Ru and R$_{12 }$ is present, Ru’s may be the 30  same or different and R$_{12}$’s may be the same or  different,  Lu represents a divalent linking group, and when a  plurality of Lu is present, Lu’s may be the same or  different,  Rc$_{1 }$ and Rc$_{2 }$ each independently represent an organic  group, and Rc$_{1 }$ and Rc$_{2 }$ may be bound with each other  to form a ring, and  MY  represents a cation.  10.  The pattern forming method according to claim  1,  for  use in fabricating semiconductor microcircuits.  11.  An electron beam-sensitive or extreme ultraviolet  ray-sensitive resin composition, comprising a resin (A)  having a repeating unit represented by Formula (1-0) and a  repeating unit represented by Formula (1-2), a compound  (B) capable of generating an acid upon irradiation with an  electron beam-sensitive or extreme ultraviolet ray, and a  solvent (C),  wherein a content of the repeating unit represented by  Formula (1-0) is 45 mo!% or more based on a whole  repeating units in the resin (A):  (1-0)  (1-2)  A represents an organic group,  Ml+ represents a cation,  x represents an integer of 1 to 20,  y represents an integer of 0 to 10,  z represents an integer of 0 to 10,  in Formula (3-2),  wherein in Formula (1-0),  R$_{1 }$ and R$_{2 }$ each independently represent an alkyl group,  Ru and R$_{12 }$each independently represent an alkyl group,  R$_{13 }$ represents a hydrogen atom or an alkyl group,  Ru and R$_{12 }$may be bound with each other to form a ring,  and Ru and R$_{13 }$may be bound with each other to form  a ring,  Ra represents a hydrogen atom, an alkyl group, a cyano  group or a halogen atom, and L$_{1 }$ represents a single  bond or a divalent linking group,  in Formula (1-2),  Rb represents a hydrogen atom, an alkyl group, a cyano  group or a halogen atom,  R$_{3 }$ represents a substituent,  n$_{1 }$ represents an integer of 1 or 2, n$_{2 }$ represents an integer  of Oto 4,  when n$_{2 }$ represents an integer of 2 to 4, R$_{3 }$’s may be bound  with each other to form a ring, and  L$_{2 }$ represents a single bond, --COO- or -CONR$_{4}$ -,  and R$_{4 }$ represents a hydrogen atom or an alkyl group.  12.  A resist film formed by using the electron beam› sensitive or extreme ultraviolet ray-sensitive resin compo› sition according to claim  11.  13.  A method for manufacturing an electronic device  comprising:  (i) providing a substrate for a semiconductor or a circuit  board; and  (ii) performing the pattern forming method according on  claim  1  to the substrate.  14.  The pattern forming method according to claim  1,  wherein the content of the repeating unit represented by  Formula (1-0) is 60 mo! % or more based on the whole  repeating units in the resin (A).  *  *  *  *  * 