US 2020/0050106 Al  2  Feb. 13, 2020  DESCRIPTION OF THE PREFERRED  EMBODIMENTS  [0039]  Hereinafter, an example of embodiments for car› rying out the present invention will be described.  [0040]  In the present specification, a numerical range  expressed using "to" is used in a meaning of a range that  includes the preceding and succeeding numerical values of  "to" as the lower limit value and the upper limit value,  respectively.  [0041]  Moreover, in citations for a group (atomic group)  in the present specification, in a case where the group is  denoted without specifying whether it is substituted or  unsubstituted, the group includes both a group not contain› ing a substituent and a group containing a substituent. For  example, an "alkyl group" which is not denoted about  whether it is substituted or unsubstituted includes not only  an alkyl group not containing a substituent (unsubstituted  alkyl group), but also an alkyl group containing a substituent  (substituted alkyl group).  [0042]  "(Meth)acryl" in the present specification collec› tively refers to acryl and methacryl, and means "at least one  of acryl or methacryl". Similarly, "(meth)acrylic acid"  means "at least one of acrylic acid or methacrylic acid".  [0043]  In the present specification, the weight-average  molecular weight (Mw), the number-average molecular  weight (Mn), and the dispersity (also referred to as a  molecular weight distribution) (Mw/Mn) of a resin are  defined as values in terms of polystyrene by means of gel  permeation chromatography (GPC) measurement (solvent:  tetrahydrofuran, flow amount (amount of a sample injected):  10 µL, columns: TSK gel Multipore HXL-M manufactured  by Tosoh Corporation, column temperature: 40°  C., flow  rate: 1.0 mL/min, detector: differential refractive index  detector) using a GPC apparatus (HLC-8120 GPC manu› factured by Tosoh Corporation).  [0044]  1  A  is lx10- $^{10 }$m.  [0045]  «Photosensitive Composition for EUV Light»  [0046]  The photosensitive composition for EUV light of  an embodiment of the present invention (hereinafter also  referred to as a "resist composition") satisfies Conditions 1  and 2 which will be described later. A reason why a desired  effect is obtained by satisfying these conditions is shown  below.  [0047]  EUV light has a wavelength of 13.5 nm, which is  a shorter wavelength than that of ArF (wavelength of 193  nm) light or the like, and therefore, the EUV light has a  smaller number of photons upon exposure with the same  sensitivity. With this, an effect of "photon shot noise" that  the number of photos is statistically non-uniform is signifi› cant and deterioration in LER is caused. In order to reduce  the photon shot noise, a method in which an exposure dose  is increased to cause an increase in the number of incident  photons is available, but the method is a trade-off with a  demand for high sensitivity. Further, a method in which the  thickness of a resist film is increased to cause an increase in  the number of absorbed photons is also available, but it  causes a reduction in a resolution.  [0048]  In contrast, according to the present invention, it is  found that the problem can be solved by making a pattern  thus formed into a thin film while increasing an absorption  efficiency of EUV light. In a case where the A value shown  in Condition 1 is high, absorption of EUV light of a resist  film formed with the resist composition is high, and by  satisfying Condition 2, a pattern formed with the resist  composition is made into a thin film. As a result, a Z-factor  which is total performance of a resolution, a line edge  roughness (LER), and a sensitivity is improved, and also,  generation of pattern collapse is suppressed.  [0049]  The resist composition satisfies Condition 1. As  described above, in a case where the A value defined in  Condition 1 is high, the absorption efficiency of EUV light  of the resist film formed with the resist composition is  increased. The A value represents the absorption efficiency  of EUV light of the resist film in terms of a mass ratio.  [0050]  Condition 1: The A value determined by Formula  (1) is 0.14 or more.  A~([H]x0.04+[C]x 1.0+[N]x2.1 +[O]x30.6+[F]x50. 6+  [S]x 1.5+[I]x39 .5)/([H]x 1 +[C]x 12+[N]x 14+[O]x  16+[F]x19+[S]x32+[I]x127)  Formula (1):  [0051]  As described, the A value is 0.14 or more, but from  the viewpoint that at least one of additional improvement of  the Z-factor or additional suppression of pattern collapse is  achieved (hereinafter also simply referred to as "the effect of  the present invention is more excellent"), the A value is  preferably 0.16 or more, more preferably 0.18 or more, and  particularly preferably 0.20 or more. The upper limit is not  particularly limited, but in a case where the A value is  extremely high, the transmittance of EUV light of the resist  film is lowered, the optical profile in the resist film is  deteriorated, as a result, it is difficult to obtain a good pattern  shape, and therefore, the upper limit is preferably 0.24 or  less, and more preferably 0.22 or less.  [0052]  In a case where A is less than 0.14, the Z-factor is  usually deteriorated.  [0053]  Moreover, in Formula (1), [HJ represents a molar  ratio of hydrogen atoms derived from the total solid content  with respect to all the atoms of the total solid content in the  photosensitive composition for EUV light, [C] represents a  molar ratio of carbon atoms derived from the total solid  content with respect to all the atoms of the total solid content  in the photosensitive composition for EUV light, [NJ rep› resents a molar ratio of nitrogen atoms derived from the total  solid content with respect to all the atoms of the total solid  content in the photosensitive composition for EUV light, [OJ  represents a molar ratio of oxygen atoms derived from the  total solid content with respect to all the atoms of the total  solid content in the photosensitive composition for EUV  light, [FJ represents a molar ratio of fluorine atoms derived  from the total solid content with respect to all the atoms of  the total solid content in the photosensitive composition for  EUV light, [SJ represents a molar ratio of sulfur atoms  derived from the total solid content with respect to all the  atoms of the total solid content in the photosensitive com› position for EUV light, and [IJ represents a molar ratio of  iodine atoms derived from the total solid content with  respect to all the atoms of the total solid content in the  photosensitive composition for EUV light.  [0054]  For example, in a case where the resist composition  includes a resin that has an increased polarity by the action  of an acid polarity and thus, has an increased solubility in an  alkali developer and a decreased solubility in an organic  solvent, a photoacid generator, an acid diffusion control  agent, and a solvent, the resin, the photoacid generator, and  the acid diffusion control agent correspond to the solid  content. That is, all the atoms in the total solid content  correspond to a sum of all the atoms derived from the resin,  all the atoms derived from the photoacid generator, and all  the atoms derived from the acid diffusion control agent. For 