Aug. 15,2002  12  US 2002/0111024 Al  pressure ( or polish down force (PSI)) ("pp"), polish table  speed, RPM ("ts"), spindle speed ( carrier speed), RPM  ("ss") and slurry flow in m/min ("sf"). The CMP results of  the process include the mean copper removal rate (MRR) in  Nmin. and the within wafer nonuniformity (%) (WIWNU).  [0120]  The result displayed below under the column head› ing "Dia-58 pt" represents 58-points diameter measurement  across the whole wafer by DCE Resmap four point probe.  The result under the column "Polar-49pt/6 mmEE" repre› sents 49 points polar measurement with 6 mm edge exclu› sion by Resmap.  [0121]  The use of an inhibitor, a fluoridizer, or both may  be advantageous in  CMP  formulations. In further accor› dance to the present invention and as delineated above,  ETA  is used to block the surface of copper from corroding or  dissolving away in the absence of an oxidizer, or corroding  or dissolving away at a controlled rate in the presence of an  oxidizer.  [0122]  As  an alternative to ETA, 2,4 pentandione dioxime  is used to block or control the rate at which the surface of  copper corrodes or dissolves away. The compound 2,4  pentandione dioxime is given by the chemical formula:  [0123]  A characteristic of ETA is that it tends to form a  resilient mono layer in the form of a cover salt, i.e., an  insoluble copper reaction product at the copper surface. This  layer can be removed only by polishing under extreme  chemical conditions that include the use of strong acids or  bases. Furthermore,  ETA  can stack crystallize on top of the  mono layer so as to physically scratch the wafer under  normal CMP processes as a result of the sharp edges of the  ETA crystals. Hence, copper is not easily polished with ETA  present.  [0124]  2,4-pentandione dioxime also forms a copper reac› tion product with copper but apparently stops at the mono› layer, yet provides blocking that was discovered to be  approximately equivalent with  ETA  That is, 2,4-pentandi› one dioxime and  ETA  both form insoluble products at  approximately the same rate and at apparently about the  same degree of insolubility. However, 2,4-pentandione  dioxime can form insoluble products at pH levels as low as  2 and 3. Thus, 2,4-pentandione dioxime complexes copper  without stack crystallizing further pentandione dioxime lay› ers on the initial monolayer of 2,4-pentandione dioxime.  [0125]  In one embodiment, the present invention is com› prised of an oxidizer (Oxidizer "D" from Example 1),  2,4-pentandione dioxime (an Insoluble Complexing Agent),  H$_{2}$ 0 4 ,  an alumina abrasive and DI Water mixed to form the  Slurry 5 Composition.  [0126]  Composition concentrations for one example are  shown in the following table.  It should be noted that the  concentration of, inter alia, the Insoluble Complexing Agent  of the present invention may be changed to alter the resultant  slurry.  [0127]  Slurry 5 Composition  [0128]  The slurry composition has a preferred pH range of  about 2.82.  [0129]  The CMP process variables and results for two  examples using the Slurry 5 Composition are shown in the  following table.  [0130]  The first above process using the Slurry 5 Com› position is achieved with a polish time of 60 seconds, a  polish pressure of 5 psi, a polish table speed of 90 RPM, a  spindle speed of 90 RPM and a slurry flow of 175 ml/min.  [0131]  The second process example using the Slurry 5  Composition is achieved by using a polish time of 60  seconds, a polish pressure of 3 psi, a polish table speed of 75  RPM, a spindle speed of 75 RPM and a slurry flow of 175  ml/min. Note that the Slurry 5 Composition is extremely  advantageous in that it provides a large WIWNU (or syn› onymously, NU%) window of 4.8% to 10.4% to account for  process variations.  [0132]  Copper Slurry Composition (Slurry "6" Composi› tion)  [0133]  In another preferred form, the present invention  doubles the weight percent of 2,4-pentandione dioxime in  the Slurry 5 Composition to form a Slurry 6 Composition.  EXAMPLE 2  Copper Substrate with Inhibited Formulations  Component  Oxidizer D  2,4-Pentandione dioxime  H$_{2}$S0$_{4 }$ Abrasive B  DI Water  Concentration (wt. %)  60.0%  0.05%  1.9%  20.0%  18.05%  Slurry  Slurry 5  Slurry 5  Dia-58 pt  Polar-49 pt/6 mmEE  CMP Process  Mean Removal  Mean Removal  s/pp/ts/ss/sf  Rate (A/min)  WWNU%  Rate (A/min)  WWNU  (%)  60/5/90/90/175 7777  6.2%  7870  4.8%  60/3/75/75/175 3910  12.3%  4325  10.4%  HO......_  N  II 