237  US 9,423,690 B2  238  as a benzoic acid, a naphthoic acid and the like may be  preferably used as a carboxylic acid.  The content of carboxylic acid is preferably 0.01 to 10%  by mass, more preferably 0.01 to 5% by mass, still more  preferably 0.01 to 3% by mass based on the total solid of the  composition.  From the viewpoint of improving the resolution, the  electron beam-sensitive or extreme ultraviolet ray-sensitive  resin composition in the present invention is preferably used  in a film thickness of 10 nm to 250 nm, more preferably in  a film thickness of 20 nm to 200 nm, and still more  preferably in a film thickness of 30 nm to 100 nm. Such a  film thickness may be achieved by setting a solid concen› tration in the composition to an adequate range to have an  appropriate viscosity, thereby improving coatability and  film-formation property.  The solid concentration of the electron beam-sensitive or  extreme ultraviolet ray-sensitive resin composition in the  present invention is usually 1.0% by mass to 10% by mass,  preferably 2.0% by mass to 5.7% by mass, and more  preferably 2.0% by mass to 5.3% by mass. By setting the  solid concentration to the above-described range, the resist  solution may be uniformly applied on a substrate and a resist  pattern having excellent line width roughness may be 25  formed. The reason is not clear, but it is thought that by  setting the solid concentration to 10% by mass or less and  preferably 5.7% by mass or less, aggregation of materials,  particularly, a photo-acid generator, in the resist solution is  suppressed, and as a result, a uniform resist film may be  formed.  The solid concentration is a weight percentage of the  weight of other resist components excluding the solvent,  based on the total weight of the electron beam-sensitive or  extreme ultraviolet ray-sensitive resin composition.  The electron beam-sensitive or extreme ultraviolet ray› sensitive resin composition in the present invention is used  by dissolving the above-described components in a prede› termined an organic solvent, preferably in the mixed solvent,  filtering the solution through a filter, and then applying the  40  filtered solution on a predetermined support (substrate). The  filter used for filtration is preferably a polytetrafluoroethyl› ene-, polyethylene- or nylon-made filter having a pore size  of 0.1 µm  or less, more preferably 0.05 µm  or less, and still  more preferably 0.03 µm  or less. In the filtration through a  45  filter, as described in, for example, Japanese Patent Appli› cation Laid-Open No. 2002-62667, circulating filtration may  be performed, or the filtration may be performed by con› necting a plurality of kinds of filters in series or in parallel.  In addition, the composition may be filtered a plurality of 50  times. Further, a deaeration treatment or the like may be  applied to the composition before or after filtration.  [Use]  The pattern forming method of the present invention may  be appropriately used to manufacture semiconductor micro- 55  circuits such as a manufacture of super LSI or high capacity  of microchips. In addition, when manufacturing semicon› ductor microcircuits, the patterned resist film is provided in  the process of forming circuits or etching, and the remaining  resist film portion is finally removed by the solvent and the 60  like. Accordingly, the resist film derived from the electron  beam-sensitive or extreme ultraviolet ray-sensitive resin  composition described in the present invention is not  residual in the finally product such as a microchip, unlike the  so-called permanent resist used for the printed circuit board.  65  Further, the present invention also relates to a method for  manufacturing an electronic device, including the above- described pattern forming method of the present invention,  and the electronic device manufactured by this manufactur› ing method.  The electronic device of the present invention is suitably  mounted on the electric electronic devices (such as home  appliances, OA media-related devices, optical devices and  communication devices).  Example  Hereinafter, the present invention will be described in  detail with reference to Examples, but the scope of the  present invention is not limited thereby.  The resm was synthesized according to the following  scheme  A cyclohexanone solution (50.00% by mass) of 2.52 g of  the compound (3), 0.78 g of the compound (2), 5.33 g of the  compound (1 ), and 0.32 g of the polymerization initiator  V-601 (manufactured by Waka Pure Chemical Industries,  Ltd.) were dissolved in 27.01 g of a cyclohexanone. 15.22 g  of cyclohexanone was put in the reaction vessel, the reaction  solution was added dropwise thereto under nitrogen atmo› sphere at 85°  C. over 4 hours. The reaction solution was  heated with stirring over 2 hours, and then it was allowed to  cool to the room temperature.  The reaction solution was added dropwise to 400 g of  heptanes to precipitate a polymer, and then filter it. The  filtered solid was washed by pouring 200 g of heptanes  thereto. After that, the solid after washing was dried under  reduced pressure to obtain 2.98 g of resin (P-5).  (1)  P-5  Synthesis Example 1  Synthesis of Resin P-5 