Jan. 5, 2012  100  US 2012/0003590 Al  [0480]  Also, the pattern forming method of the present  invention comprises a step of exposing and developing the  resist film above.  [0481]  The composition of the present invention is typi› cally used as follows. That is, the composition of the present  invention is typically coated on a support such as substrate to  form a film.  [0482]  The thickness of the film is preferably from 0.02 to  0.1 µm. The method for coating the composition on a sub› strate is preferably spin coating, and the spinning speed is  preferably from 1,000 to 3,000 rpm.  [0483]  For example, the composition is coated on such a  substrate ( e.g., silicon/silicon dioxide-coated substrate, sili› con nitride and chromium-deposited quartz substrate) as used  in the production of a precision integrated circuit device, an  imprint mold or the like, by using a spinner, a coater or the  like. Thereafter, the coating is dried to obtain an actinic ray› sensitive or radiation-sensitive film (hereinafter, sometimes  referred to as a "resist film"). Incidentally, a known antire› flection film may be previously provided by coating.  [0484]  Subsequently, the resist film is irradiated with an  actinic ray or radiation, then preferably baked (usually at 80  to 150°  C., preferably at 90 to 130°  C.), and developed. By  performing baking, a more excellent pattern can be obtained.  [0485]  Examples of the actinic ray or radiation include  infrared light, visible light, ultraviolet light, far ultraviolet  light, X-ray and electron beam. An actinic ray or radiation  having, for example, a wavelength of250 nm or less, particu› larly 220 nm or less, is preferred. Such an actinic ray or  radiation includes, for example, KrF excimer laser (248 nm),  ArF excimerlaser(193 nm), F$_{2 }$excimerlaser(157 nm), X-ray  and electron beam. The actinic ray or radiation is preferably,  for example, KrF excimer laser, electron beam, X-ray or EUV  light, more preferably electron beam, X-ray or EUV light.  [0486]  That is, the present invention also relates to an  actinic ray-sensitive or radiation-sensitive resin composition  for KrF excimer laser, electron beam, X-ray or EUV light  (preferably electron beam, X-ray or EUV light).  [0487]  In the development step, an alkali developer is usu› ally used.  [0488]  Examples of the alkali developer include an alkaline  aqueous solution containing inorganic alkalis such as sodium  hydroxide, potassium hydroxide, sodium carbonate, sodium  silicate, sodium metasilicate and aqueous annnonia, primary  amines such as ethylamine and n-propylamine, secondary  amines such as diethylamine and di-n-butylamine, tertiary  amines such as triethylamine and methyldiethylamine, alco› hol amines such as dimethylethanolamine and triethanola› mine, quaternary ammonium salts such as tetramethylammo› nium hydroxide and tetraethylammonium hydroxide, or  cyclic amines such as pyrrole and piperidine.  [0489]  In the alkali developer, alcohols and a surfactant  may be added in an appropriate amount.  [0490]  The concentration of the alkali developer is usually  from 0.1 to 20 mass %. The pH of the alkali developer is  usually from 10.0 to 15.0.  [0491]  Also, an imprint mold may be produced using the  composition of the present invention. For details, please refer  to, for example, Japanese Patent 4,109,085, JP-A-2008- 162101, and "Yoshihiko Hirai (compiler),  Nanoimprint no  Kiso to Gijutsu Kaihatsu•Oyo  Tenkai-Nanoimprint no Kiban  Gijutsu to Saishin no Gijutsu Tenkai (Basic and Technology  Expansion•Application  Development of Nanoimprint-Sub› strate Technology of Nanoimprint and Latest Technology  Expansion),  Frontier Shuppan".  [0492]  The present invention is described in greater detail  below, but the contents of the present invention are not limited  thereto.  [0493]  Resins P-1 to P-48 illustrated above were synthe› sized as follows.  EXAMPLES  <Resin>  Resin P-14  Synthesis Example 1  [0494]  Resin P-14 was synthesized according to the follow› ing scheme.  -- OH  (6)  (5)  0  0  -- I  -- I  -- O=S=O  O=S=O  F*F  F*F  F  F  F  F  S02F  S03Na  (7)  (8) 