(IO)  Patent No.:  US 7,049,044 B2  (45)  Date of Patent:  May 23, 2006  c12)  United States Patent  Gonsalves et al.  (54)  NANOCOMPOSITE NEGATIVE RESISTS  FOR NEXT GENERATION LITHOGRAPHIES  (75)  Inventors:  Kenneth Gonsalves,  Concord, NC  (US);  Mohammed Azam Ali,  Charlotte,  NC (US)  (73)  Assignee:  The University of North Carolina at  Charlotte,  Charlotte, NC (US)  ( *)  Notice:  Subject to any disclaimer, the term of this  patent is extended or adjusted under 35  U.S.C. 154(b) by 203 days.  (21)  Appl. No.:  10/324,642  (22)  Filed:  Dec. 19, 2002  (65)  Prior Publication Data  US 2006/0088787 Al  Apr. 27, 2006  Chem. Abstract (AN 1992:408654)-English abstract for  EP 473547 (Steinmann et al).*  Chem. Abstract (AN 1995: 198693 )-English abstract for JP  06-228086 (Muraoka et al).*  JPO Abstract-English abstract for JP 06-228086 (Muraoka  et al).*  Full, formal English translation of JP 6-228086 of JP  6-228086 (Muraoka et al), provided by PTO.*  Chem.  Abstract  119:96450----English  abstract  for  JP  5-086133 (Akashi et al).*  Brainard, Robert  L., et al., "Resists for next generation  lithography," Microelectronic Engineering (2002), article in  press.  (Continued)  Primary Examiner-Sin  Lee  (74)  Attorney, Agent, or  Firm-Kilpatrick Stockton LLP; J.  Clinton Wimbish  (57)  ABSTRACT  32 Claims, 3 Drawing Sheets  U.S. PATENT DOCUMENTS  (56)  References Cited  The present invention provides new high resolution nano› composite resists applicable to next generation lithogra› phies, methods of making these novel resists, and methods  of using these new resists in lithographic processes to effect  state-of-the-art lithographies. New nanocomposite negative  resists comprising a photoacid generating component, a  styrene component, and an optional polyhedral oligosilse› quioxane component are provided. Negative resists of this  invention may also contain an optional methacrylate com› ponent. This invention and the embodiments described  herein constitute fundamentally new architectures for high  resolution resists.  (51)  Int. Cl.  G03C 1173  (2006.01)  G03F 71038  (2006.01)  G03F  71039  (2006.01)  G03F  7120  (2006.01)  (52)  U.S. Cl.  ...............................  430/270.1;  430/280.1;  430/905; 430/910; 430/914; 430/921; 430/925;  430/942; 430/966; 430/302; 430/325; 430/326;  526/287; 526/279  (58)  Field of Classification Search  ............. 430/270.1,  430/280.1, 302,325, 326, 905, 910, 914,  430/921, 925, 966, 942  See application file for complete search history.  1/1988 Lewis et al.  7/1998 Sabnis et al.  5/2001 Kasai et al.  4,717,513 A  5,780,201  A  6,232,034 Bl  6,238,541 Bl*  6,306,556 Bl  6,420,084 Bl  5/2001 Sasaki et al. ............... 205/211  10/2001 Matsuo et al.  7/2002 Angelopoulos et al.  6,884,562 Bl*  4/2005 Schadt, III et al. ...... 430/270.1  2002/0182541 Al* 12/2002 Gonsalves ............... 430/287.1  FOREIGN PATENT DOCUMENTS  EP  JP  0 473 547 Al  *  8/1991  6-228086  8/1994  OTHER PUBLICATIONS  PHS  PAG  +  POSS (R  =  cyclopentyl)  US007049044B2 