US 2012/0003590 Al  106  Jan. 5, 2012  Evaluation Results  Resist Composition  Resolution of  Resin (P)  Solvent  (98 mass%) (mass ratio)  Basic Compound  (2 mass%)  Surfactant  (0.01 mass%)  Sensitivity  (µC/cm 2 )  Pattern  LER Isolated Pattern  Etching  Profile  (nm)  (nm)  Resistance  Example 52  P-52  S-1/S-3 (90/10)  N-3  W-2  Example 53  P-53  S-1 (100)  N-7  W-3  Example 54  P-54  S-1/S-2 (50/50)  N-3  W-4  Example 55  P-55  S-1/S-2 (80/20)  N-4  W-3  Comparative  C-1  S-1/S-2 (60/40)  N-3  W-3  Example 1  Comparative  C-2  S-1/S-2 (80/20)  N-3  W-4  Example 2  24  rectangular  5.6  50.0  A  15  rectangular  5.8  62.5  A  15  rectangular  5.0  50.0  A  15  rectangular  5.5  50.0  A  53  Taper  8.5  100.0  B  55  taper  8.2  100.0  B  TABLE 3-continued  [0527]  As seen in Tables 2 and 3, the compos1t10ns of  Examples were excellent in all of sensitivity, pattern profile,  LER, resolution of isolated pattern and etching resistance  compared with the compositions of Comparative Examples.  mass% at 23 °  C. for 60 seconds, rinsed with pure water for 30  seconds, and dried. In this way, a line-and-space pattern (line:  space= 1: 1) was formed.  [0528]  The components shown in Table 4 below were dis› solved in the solvent shown in the same Table to prepare a  solution having a solid content concentration of3.0 mass%,  and this solution was filtered through a polytetrafluoroethyl› ene filter having a pore size of0.1 µm,  whereby positive resist  solutions were obtained.  [0532]  The cross-sectional profile of the obtained line-and› space pattern was observed using a scanning electron micro› scope (S-4800, manufactured by Hitachi, Ltd.), and the mini› mum irradiation energy when resolving a line having a line  width of 100 nm was determined. This value was shown as  "Sensitivity (mJ/cm 2 )".  [0529]  The numerical value of"mass %" shown in Table 4  is a value based on the entire solid content excluding the  surfactant of the composition. Incidentally, the content of the  surfactant is 0.01 mass % based on the entire solid content  excluding the surfactant of the composition.  [0530]  The positive resist solution obtained above was  coated on a hexamethyldisilazane-treated silicon substrate by  using a spin coater and dried by heating on a hot plate at 120°  C. over 90 seconds to obtain a resist film having an average  thickness of 100 nm.  [0531]  This resist film was irradiated with EUV light by  using an EUV exposure apparatus. Immediately after the  irradiation, the film was heated on a hot plate at 130°  C. over  90 seconds, then developed with an aqueous tetramethylam› monium hydroxide solution having a concentration of 2.38  [0533]  The cross-sectional profile of the 100-nm line pat› tern (line:space=l :1) at the irradiation dose giving the sensi› tivity above was observed using a scanning electron micro› scope (S-4800, manufactured by Hitachi, Ltd.), and the  profile was evaluated on a 2-stage scale, that is, "rectangular"  and "tapered".  [0534]  The 100-nm line pattern (line:space= 1: 1) above was  observed using a scanning electron microscope (S-9260,  manufactured by Hitachi Ltd.), and the distance between the  actual edge and the reference line where the edge should be  present was measured at 30 points at regular intervals  included in the portion of 50 µmin  the longitudinal direction  of the pattern. The standard deviation of the distance was  determined, and 3a was computed. This  3a  was shown as  "LER (nm)".  [0535]  These evaluation results are shown in Table 4 below.  <Evaluation of Resist (EUV)>  (Sensitivity)  (Pattern Profile)  (Roughness Characteristics: LER)  [Sensitivity, Pattern Profile and Roughness Characteristics]  TABLE4  Resin  (98  mass%)  Example 56  P-9  Example 57  P-27  Example 58  P-30  Example 59  P-14  Resist Com12osition  Basic  Evaluation Results  Solvent  Compound  Surfactant  Sensitivity  Pattern  LER  (mass ratio)  (2 mass%)  (0.01 mass%)  (mJ/cm 2 )  Profile  (nm)  S-1/S-2  N-3  W-3  25  rectangular  4.8  (60/40)  S-1/S-2  N-3  W-4  24  rectangular  5.0  (80/20)  S-2  N-1  W-1  20  rectangular  4.8  (100)  S-1/S-2  N-6  W-3  23  rectangular  5.1  (70/30) 