1111111111111111 IIIIII IIIII 1111111111 11111 11111 lllll 111111111111111 11111 1111111111 11111111  US 20210033970Al  c19)  United States  c12)  Patent Application Publication  Hatakeyama et al.  c10)  Pub. No.: US 2021/0033970 Al  (43)  Pub. Date:  Feb. 4, 2021  (54)  RESIST COMPOSITION AND PATTERNING  PROCESS  (71)  Applicant:  Shin-Etsu Chemical Co., Ltd.,  Tokyo  (JP)  (72)  Inventors:  Jun Hatakeyama,  Joetsu-shi (JP);  Takayuki Fujiwara,  Joetsu-shi (JP)  (73)  Assignee:  Shin-Etsu Chemical Co., Ltd.,  Tokyo  (JP)  (21)  Appl. No.:  16/919,574  (22)  Filed:  Jul. 2, 2020  (51)  Int. Cl.  (52)  U.S. Cl.  CPC ..........  G03F  710045  (2013.01);  G03F  710392  (2013.01);  G03F  710382  (2013.01);  G03F  7/162  (2013.01);  C08F 220/1802  (2020.02);  C08F  212124  (2020.02);  C08F 220/1806  (2020.02)  (30)  Foreign Application Priority Data  Publication Classification  (57)  ABSTRACT  Aug. 2, 2019  (JP) ................................. 2019-142948  A resist composition comprising a base polymer and a  quencher in the form of an ammonium salt consisting of an  ammonium cation having an iodized aromatic ring bonded  to the nitrogen atom via a  C$_{1 }$-C$_{20 }$ hydrocarbylene group  which may contain an ester bond or ether bond and a  carboxylate anion having an iodized or brominated hydro› carbyl group offers a high sensitivity and minimal LWR or  improved CDU, independent of whether it is of positive or  negative tone.  G03F  71038  C08F  220118  C08F  212114  (2006.01)  (2006.01)  (2006.01)  G03F  71004  G03F  71039  (2006.01)  (2006.01) 