120  US 7,851,130 B2  119  -continued  From the results shown in Table 5, it can be seen that the  photosensitive compositions in the invention have also excel› lent performances as the negative resist compositions in KrF  excimer laser exposure.  A positive resist solution having the concentration of solids  content of 12 mass % is prepared by dissolving the compo- nents in the solvents respectively shown in Table 3, and fil- trating the solution through a polytetrafluoroethylene filter  having a pore size of0.1 µm.  Evaluation of Resist:  The prepared positive resist solution is uniformly coated on  a silicon substrate having been subjected to hexamethyldisi- lazane treatment by a spin coater, and dried by heating on a  hot plate at 120°  C. for 60 seconds to form a resist film having  a thickness of0.3 µm.  The resist film is irradiated with an electron beam projec- tion lithographic apparatus (accelerating voltage: 100 keV,  manufactured by Nikon Corporation), and heated on a hot  plate at 110°  C. for 90 seconds just after irradiation. Further,  the resist film is developed with a 2.38 mass% tetramethyl- ammonium hydroxide aqueous solution at 23°  C. for 60 sec- ands, rinsed with pure water for 30 seconds, and then dried to  form a line and space pattern. Performances are evaluated in  the same manner as in Example 1.  Preparation of Resist  Examples 27 to 32 and Comparative Example 5  CL-6  CL-5  CL-4  OH  MeO  OMe  -continued  OH  MeO  MeO  MeO  OH  CL-2  OH  OH  HO  HO  OH  CL-1  OH  OH  OH  OH  HO  HO  HO  OH  OH  OH  CL-3  VP-5000 (manufactured by Nippon Soda Co., Ltd.)  Mw  Mw/Mn  P-3  6000  1.2  OH 