2  US 7,851,130 B2  1  decomposable resin), and chemical amplification resist com› positions comprising acid generators are effectively used as  the main components.  In connection with these positive resists for electron  beams, X-rays or EUV rays, some resist compositions con› taining phenolic acid-decomposable resin are known (e.g.,  JP-A-2002-323768 (The term "JP-A" as used herein refers to  an "unexamined published Japanese patent application".),  JP-A-6-41221, Japanese Patent No. 3173368, JP-A-2000- 122291, JP-A-2001-114825, and JP-A-2001-206917).  As the resist suitable for lithographic process using elec- tron beams, X-rays or EUV rays, chemical amplification  resists utilizing acid catalytic reaction are mainly used from  the viewpoint of the enhancement of sensitivity, and in posi› tive resists, phenolic polymers having properties that are  insoluble or hardly soluble in an alkali developing solution  but become soluble in an alkali developing solution by the  action of an acid (hereinafter referred to as phenolic acid- Further, when EUV is used as the light source, since wave› lengths of the lights belong to the extreme ultraviolet region  having high energy, there is a problem of contrast reduction  due to concentration of photochemical reaction such as the  tendency to be negative attributable to EUV rays and the like.  In lithography using X-rays or EUV rays, it is also an impor› tant object to reconcile high sensitivity and high resolution,  and the resolution of this problem is indispensable.  In particular, electron beam lithography is taken as the  pattern forming technique of the next generation or the next of  the next generation, so that resists of high sensitivity and high  resolution are required. The increase in sensitivity is very  important object in view of shortening of the processing time  of wafers, but in positive resists for electron beams, pursuit of  increment of sensitivity is accompanied by not only reduction  of resolution but also deterioration ofline edge roughness, so  that the development of a resist satisfying these characteris› tics at the same time is strongly desired. Here, line edge  roughness means that the edge of the interface between the  line pattern of a resist and a substrate irregularly changes in  perpendicular direction to the line direction attributable to the  characteristics of the resist, and the edge looks unevenly when  it is observed from right above. This unevenness is transferred  to the substrate by etching processing with the resist as a mask  and deteriorates electric characteristic and results in the  reduction of yield. In particular, line edge roughness is an  extremely important object to be solved in a hyperfine region  of 0.25 µm  or less. High sensitivity, high resolution, a good  pattern form and good line edge roughness are in relationship  of trade-off, and how to satisfy these factors at the same time  is a very important object.  In the manufacturing process of semiconductor devices  such as IC and LSI, fine processing by lithography using  photoresist compositions has been conventionally carried  out. In recent years, with the increment of integration of  integrated circuits, ultrafine pattern formation of the levels of  a sub-micron and quarter-micron has come to be required.  Under such a circumstance, the exposure wavelengths show a  tendency to be shortening, such as from g-ray to i-ray, further  to KrF excimer laser beam. Further, lithography using elec› tron beams, X-rays or EUV rays in addition to excimer laser  beams has been developed nowadays.  The present invention relates to a photosensitive composi› tion preferably used in super-microlithography processes  such as the manufacture of super LSI and high capacity  microchips, and other photo-publication processes. More  specifically, the invention relates to a positive photoresist  capable of forming a highly refined pattern with electron  beams, X-rays or EUV rays, and a resist composition suitable  for fine processing of semiconductor devices using electron  beams, X-rays or EUV rays (wavelength: 13 nm or so).  Further, when light sources such as electron beams, X-rays  and EUV are used, exposure is carried out under a vacuum, so  that compounds having a low boiling point such as solvents  and resist materials decomposed by high energy are volatil› ized to thereby contaminate the exposure apparatus, i.e., out- gassing is a serious problem. In recent years, various investi› gations are in progress on the reduction of outgassing, and a  variety of trials are suggested, e.g., restraint of volatilization  of low molecular weight compounds by forming a top coat  layer (e.g., refer to EP 1480078), and addition of a radical  trapping agent capable of inhibiting decomposition of a poly› mer (e.g., refer to U.S. Pat. No. 6,680,157). Some contriv› ances of outgassing are also required in connection with acid  generators.  In addition, contrivances such as linking of a benzene ring  oftriphenyl sulfonium (JP-A-2003-149800), and addition of  a base capable of decomposing and becoming a neutral com› pound by actinic radiation exposure (Japanese Patent No.  3549592) have been tried.  However, it is the present situation that high sensitivity,  high resolution, good line edge roughness and low outgassing  in a hyperfine region cannot be satisfied at the same time with  any of these combinations.  An object of the invention is to solve the problems of the  improving technique of performances in fine processing of  semiconductor devices using high energy rays, X-rays, elec› tron beams or EUV rays, and another object is to provide a  photosensitive composition capable of satisfying high sensi› tivity, high resolution, good line edge roughness and low  outgassing at the same time.  As a result of eager examinations, the present inventors  have found that the above objects of the invention can be  achieved surprisingly with a photosensitive composition con› taining specific compound (A).  That is, the invention can be achieved by the following  constitutions.  (1) A photosensitive composition comprising:  (A) a compound represented by the following formula  (I):  SUMMARY OF THE INVENTION  1.  Field of the Invention  2. Description of the Related Art  BACKGROUND OF THE INVENTION  PHOTOSENSITIVE COMPOSITION,  COMPOUND FOR USE IN THE  PHOTOSENSITIVE COMPOSITION, AND  PATTERN-FORMING METHOD USING THE  PHOTOSENSITIVE COMPOSITION  (I)  wherein R$^{1 }$to R$^{13 }$each independently represents a hydro› gen atom or a substituent; 