US 9,423,690 B2  2  1  A high sensitivity, a high resolution and a good pattern  shape are in a relationship of a tradeoff therebetween, and  thus it is very important how to satisfy them at the same  time.  In order to solve the problems, for example, Japanese  Patent Application Laid-Open No. 2005-91712 discloses a  positive type resist composition using a resin having a  certain repeating unit of an acid-decomposable group having  an alicyclic group and a certain polystyrene repeating unit.  According to the document, the resolution and the sensitiv› ity are said to be improved.  However, in a positive type image forming method, an  isolated line or dot pattern may be formed well, but the  shapes of patterns are easy to deteriorate when an isolated  space or fine hole patterns are formed.  In addition, a pattern forming method using a developer  containing an organic solvent has been developed recently  (for example, see Japanese Patent Application Laid-Open  No. 2010-217884). According to this method, it is said that  the stable formation of a micro pattern in high precision is  possible. Further, in recent years, the needs of the formation  of fine isolated space patterns and the refinement of hole  patterns are rapidly increasing. Because of this, a further  performance improvement on sensitivity, resolution, and  space width roughness performance is required in the for› mation of fine isolated space patterns having a space width  of 100 nm or less. Similarly, in the case of forming a hole  pattern having fine pore diameter (for example, 50 nm or  less), a further performance improvement on high resolu› tion, good exposure latitude (EL), and the uniformity of  local pattern dimension (Local-CDU) is required.  An object of the present invention is to provide a pattern  forming method, an electron beam-sensitive or an extreme  ultraviolet ray-sensitive resin composition, and a resist film,  and a method for manufacturing an electronic device, and an  electronic device using the same, in which the pattern  forming method provides an excellent sensitivity, resolution,  and space width roughness performance in the formation of  fine isolated space patterns having a space width of 100 nm  or less, and also provides a high resolution, a good exposure  latitude (EL), and an excellent uniformity of local pattern  dimension (Local-CDU) in the case of forming a hole  pattern having fine pore diameter (for example, 50 nm or  less).  (a) forming a film by using an electron beam-sensitive or  extreme ultraviolet ray-sensitive resin composition contain› ing a resin (A) having a repeating unit represented by  Formula (1-0) and a repeating unit represented by Formula  (1-2);  (b) exposing the film by using an electron beam or  extreme ultraviolet ray; and  ( c) developing the exposed film by using a developer  containing an organic solvent to form a negative pattern,  wherein a content of the repeating unit represented by  Formula (1-0) is 45 mo!  % or more based on a whole  repeating units in the resin (A):  A micromachining by a lithography using a photoresist  composition has been conducted in a conventional manu› facturing process of a semiconductor device such as an IC or  LSI. Recently, an ultrafine pattern formation of a submicron  region or a quarter micron region has been required, because  an integration level of an integrated circuit becomes higher.  Accordingly, an exposure wavelength has a tendency to  become shorter from g line to i line, and further to a KrF  excimer laser ray. Furthermore, development of a lithogra› phy using an electron beam or X-ray or EUV ray other than  the excimer laser ray is now progressing.  These electron beam or X-ray or EUV ray lithography  takes a position as a pattern forming technique of the next  generation or the next of the next generation, and a resist  composition of a high sensitivity and high resolution is  desired. Particularly, a high sensitization is a very important 60  problem to be solved for shortening of a processing time of  wafer. However, when intending to the high sensitization, a  resolution which is represented by a pattern shape or limit› ing resolution line width is prone to be reduced. Thus, the  development of a resist composition which is capable to 65  satisfy these characteristics at the same time is highly  demanded.  The present invention relates to a pattern forming method  using a developer containing an organic solvent, which is  suitably used in a super micro lithography process such as a  manufacturing process of a super LSI or high capacity  microchip or other photofabrication processes, an electron  beam-sensitive or an extreme ultraviolet ray-sensitive resin  composition, and a resist film, and a method for manufac› turing an electronic device, and an electronic device using  the same. More specifically, the present invention relates to  a pattern forming method using a developer containing an  organic solvent, which is suitably used in a micromachining  process of semiconductor device using an electron beam or  EUV ray (wavelength: near 13 nm), an electron beam› sensitive or an extreme ultraviolet ray-sensitive resin com› position, and a resist film, and a method for manufacturing  an electronic device, and an electronic device using the  same.  This is a continuation of International Application No.  PCT/JP2013/072485 filed on Aug. 16, 2013, and claims  priority from Japanese Patent Application Nos. 2012- 181892 filed on Aug. 20, 2012, and 2013-054401 filed on  Mar. 15, 2013, the entire disclosures of which are incorpo› rated herein by reference.  PATTERN FORMING METHOD, ELECTRON  BEAM-SENSITIVE OR EXTREME  ULTRAVIOLET RAY-SENSITIVE RESIN  COMPOSITION, RESIST FILM, AND  METHOD FOR MANUFACTURING  ELECTRONIC DEVICE, AND ELECTRONIC  DEVICE USING THE SAME  CROSS-REFERENCE TO RELATED  APPLICATION  TECHNICAL FIELD  BACKGROUND ART  SUMMARY OF INVENTION  The present invention is as follows.  [1] A pattern forming method, including: 