38  US 7,049,044 B2  37  EXAMPLE 19  to about 85% by weight of the styrene component, and about  10% to about 15% by weight of the polyhedral oligosilse› quioxane component.  8.  The nanocomposite resist polymer of claim  1,  further  comprising a methacrylate component.  9.  The nanocomposite resist polymer of claim  8,  wherein  the methacrylate component comprises methyl methacry› late, t-butyl methacrylate, methacrylic acid, or a combina› tion thereof.  10.  The nanocomposite resist polymer of claim  8,  further  comprising a dissolution promoter.  11.  The nanocomposite resist polymer of claim  10,  wherein the dissolution promoter comprises itaconic anhy› dride.  12.  The nanocomposite resist polymer of claim  1,  wherein  the polymer is prepared from about 10% to about 20% by  weight of the photoacid generating component, about 80%  to about 90% by weight of the styrene component.  Lithographic Properties of the Nanocomposite Resists  Under 13.4 mn EUV, 1 mn XRL, and Related Protocols  The lithographic properties of the nanocomposite resists  of this invention were evaluated under a number of standard  lithographic protocols, including 13.4 mn EUV and 1 mn  X-ray protocols. For example, using both EUV and X-ray  lithographic protocols for samples 2a through 2d (see  Example 2), high sensitivity was observed for both EUVL  exposure (1.0-1.2 mJ/cm 2 )  and XRL exposure (70---100  mJ/cm 2 )  and high contrast (y=5.2 for EUVL and y=5.1 for  XRL) was also established. These resists also constitute  potential candidates for low voltage EB lithography (sensi- tivity=0.6 µC/cm 2 ;  contrast=4.5).  What is claimed is:  1.  A nanocomposite resist polymer comprising:  2.  The nanocomposite resist polymer of claim  1,  wherein  the styrene component comprises tetrahydropyranyl oxysty› rene (THPS), para-hydroxy styrene (PHS), poly-(tetrahy› dropyranyl oxystyrene) (poly-THPS), poly-(para-hydroxy  styrene (poly-PHS), or combinations thereof.  3.  The nanocomposite resist polymer of claim  1  further  comprising a polyhedral oligosilsequioxane component.  4.  The nanocomposite resist polymer of claim  3,  wherein  the polyhedral oligosilsequioxane component comprises  3-(3,5, 7,9,11,13,15-heptacyclo-pentylpentacyclo-[9.5.l .1 3 • 9 .  1 5 • $^{15 }$.1 7 • $^{13}$]octasiloxane-l-yl)propyl methacrylate; 3-[(3,5,7,  9,11, 13,15-heptacyclopentylpentacyclo-[9.5.l .l  3• $^{9}$.l 5 • $^{15 }$.1 7 •  13] octasiloxan-1-yloxy )dimethy lsily l]propy 1 methacry late;  1,3,5, 7,9, 11, 13-heptacyclopentyl-15vinylpentacyclo- [9 .5.1.1 3 • $^{9}$.1 5 • $^{15 }$.1 7 • $^{13}$]octasiloxane, or combinations thereof.  5.  The nanocomposite resist polymer of claim  3,  wherein  the polyhedral oligosilsequioxane component comprises  Allylcyclohexyl-POSS, Allylcyclopentyl-POSS, Allylisobu› tyl-POSS, Tris(dimethylvinyl)cyclohexyl-POSS, Tris(dim› ethylvinyl)cyclo-pentyl-POSS, Tris(dimethylvinyl)isobutyl› POSS, Acrylocyclohexyl-POSS, Acrylocyclopentyl-POSS,  Acryloisobutyl-POSS, Methacrylcyclohexyl POSS, Meth› acrylcyclopentyl POSS, Methacrylisobutyl POSS, Meth› acrylisooctyl  POSS,  Norbornenylethylcyclohexyl-POSS,  N orborneny lethy lcyclopentyl-POSS,  N orborneny lethyl- iso butyl-POSS,  EpoxycyclohexylCyclohexyl-POSS,  EpoxycyclohexylCyclopentyl-POSS,  Epoxycyclohexyl› isobutyl-POSS,  Epoxycyclohexyldisilanolisobutyl-POSS,  8-substituted Epoxycyclohexyl-POSS Cage, IO-substituted  Epoxycyclohexyl-POSS Cage, 12-substituted Epoxycyclo› hexyl-POSS  Cage,  Epoxypropylcyclopentyl-POSS,  Epoxypropylisobutyl-POSS,  Glycidylcyclopentyl-POSS,  Glycidylethyl-POSS,  Glycidylisobutyl-POSS,  Glycidyl› isooctyl-POSS, or combinations thereof.  6.  The nanocomposite resist polymer of claim  3,  wherein  the polymer is prepared from about 5% to about 20% by  weight of the photoacid generating component, about 70%  to about 90% by weight of the styrene component, and about  3% to about 20% by weight of the polyhedral oligosilse› quioxane component.  7.  The nanocomposite resist polymer of claim  3,  wherein  the polymer is prepared from about 5% to about 15% by  weight of the photoacid generating component, about 70%  13.  A lithographic process comprising the steps of expos- ing a lithographic recording medium to a radiation source  and developing the exposed recording medium wherein the  lithographic recording medium comprises the nanocompos› ite resist polymer of claim  1.  14.  The lithographic process of claim  13  wherein the  process is an extreme ultraviolet lithographic process.  15.  The lithographic process of claim  13  wherein the  process is an X-ray lithographic process.  16.  The lithographic process of claim  13  wherein the  process is a vacuum ultraviolet lithographic process.  17.  The lithographic process of claim  13  wherein the  process is an electron beam lithographic process.  18.  The lithographic process of claim  13  wherein the  process is an ion beam lithographic process.  19.  A nanocomposite resist polymer comprising tetra- hydropyranyl oxystyrene or poly(hydroxystyrene), 3-(3,5,7,  9,11,13,15-heptacyclopentylpentacyclo-[9.5. l .1 3 • $^{9 }$.1 5 • $^{15 }$.1 7 •  13] octasiloxane-1-y l)propy 1 methacry late, and [p-CH $_{2 }$-C  (CH$_{3}$)C(O)-OC$_{6}$H$_{4}$ SMe$_{2}$]OSO$_{2}$CF $_{3}$ .  20.  The nanocomposite resist polymer of claim  19,  further  comprising t-butyl methacrylate.  21.  A nanocomposite resist polymer comprising:  a photoacid generating component; and  a styrene component, wherein the photoacid generating  component  comprises  [p-CH$_{2}$-C(CH$_{3}$)C(O)  OC$_{6}$H$_{4}$ SMe$_{2}$]OSO$_{2}$CF $_{3}$ .  22.  A nanocomposite resist polymer comprising:  a photoacid generating component;  a styrene component; and  a polyhedral oligosilsequioxane component.  23.  The nanocomposite resist polymer of claim  22,  wherein the polyhedral oligosilsequioxane component com› prises  3-(3,5,7,9,11,13, 15-heptacyclo-pentylpentacyclo› [9.5. l. l 3•9 .l  5 • $^{15 }$.1 7 • $^{13}$]octasiloxane-l-yl)propyl  methacry› late;  3-[ (3,5, 7,9, 11, 13, 15-heptacyclopentylpentacyclo- [9.5.1.1 3 • $^{9}$.1 5 • $^{15 }$.1 7 • $^{13}$]octasiloxan-1-yloxy)dimethylsilyl]  propyl  methacrylate;  1,3,5, 7,9, 11,13-heptacyclopentyl- 15vinylpentacyclo-[9.5.l .l  3•9 .l  5 • $^{15 }$.l 7•$^{13}$]octasiloxane,  or  combinations thereof.  24.  The nanocomposit resist polymer of claim  22,  wherein  the polyhedral oligosilsequioxane component comprises  Allylcyclohexyl-POSS, Allylcyclopentyl-POSS, Allylisobu› tyl-POSS, Tris(dimethylvinyl)cyclohexyl-POSS, Tris(dim› ethylvinyl)cyclo-pentyl-POSS, Tris( dimethylvinyl)isobutyl› POSS, Acrylocyclohexyl-POSS, Acrylocyclopentyl-POSS,  Acryloisobutyl-POSS, Methacrylcyclohexyl POSS, Meth› acrylcyclopentyl POSS, Methacrylisobutyl POSS, Meth› acrylisooctyl  POSS,  Norbornenylethylcyclohexyl-POSS,  a photoacid generating component; and  a styrene component, wherein the photoacid generating  component and styrene component are copolymerized  and wherein the photoacid generating component com› prises [p-CH$_{2 }$-C(CH$_{3}$)C(O)OC$_{6}$H$_{4}$ SMe$_{2}$]OSO$_{2}$CF $_{3}$ . 