To get around the secondary electron generation, it will be imperative to use low-energy electrons as the primary radiation to expose photoresist. Ideally, these electrons should have energies on the order of not much more than several eV in order to expose the photoresist without generating any secondary electrons, since they will not have sufficient excess energy. Such exposure has been demonstrated using a scanning tunneling microscope as the electron beam source. The data suggest that electrons with energies as low as 12 eV can penetrate 50 nm thick polymer photoresist. The drawback to using low energy electrons is that it is hard to prevent spreading of the electron beam in the photoresist. Low energy electron optical systems are also hard to design for high resolution. Coulomb inter-electron repulsion always becomes more severe for lower electron energy.

Another alternative in electron-beam lithography is to use extremely high electron energies (at least 100 keV) to essentially "drill" or sputter the material. This phenomenon has been observed frequently in transmission electron microscopy. However, this is a very inefficient process, due to the inefficient transfer of momentum from the electron beam to the material. As a result it is a slow process, requiring much longer exposure times than conventional electron beam lithography. Also high energy beams always bring up the concern of substrate damage.

Interference lithography using electron beams is another possible path for patterning arrays with nanometer-scale periods. A key advantage of using electrons over photons in interferometry is the much shorter wavelength for the same energy.

Despite the various intricacies and subtleties of electron beam lithography at different energies, it remains the most practical way to concentrate the most energy into the smallest area.

इलेक्ट्रॉन किरण अश्मलेखन तंत्र
New frontiers in electron-beam lithography
Electron energy deposition in matter
Proximity effect