Carrier relaxation in Si/SiO$_2$ quantum dots
  Carrier relaxation due to both optical and nonradiative intraband transitions in silicon quantum dots in SiO$_2$ has been considered. Interaction of confined holes with optical phonons has been studied. The Huang-Rhys factor is calculated for such transitions. The probability of intraband transition of a confined hole emitting several optical phonons is estimated. 
A. A. Prokofiev, S. V. Goupalov, A. S. Moskalenko, A. N. Poddubny, I.   N. Yassievich