A gate-defined silicon quantum dot molecule
  We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum in weakly coupled dots and an energy level anticrossing in strongly coupled ones. Such a quantum dot molecule with both charge and energy quantization provides the essential prerequisite for future implementation of silicon-based quantum computations. 
H.W.Liu, T.Fujisawa, H.Inokawa, Y.Ono, A.Fujiwara, and Y.Hirayama