Spin rotation, spin filtering, and spin transfer in directional   tunneling through non-centrosymmetric semiconductor barriers
  We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into account both the spin-orbit interaction and the absence of the inversion symmetry, the evanescent states in the barrier are spin split and the tunneling process can become rather involved. Along some crystallographic directions, the incident wave experiences spin filtering during the tunneling. These results open stimulating perspectives for spin manipulation in tunnel devices. 
T. L. Hoai Nguyen, Henri-Jean Drouhin, Jean-Eric Wegrowe, Guy Fishman