Mott Relation for Anomalous Hall and Nernst effects in Ga1-xMnxAs   Ferromagnetic Semiconductors
  The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this work, we have simultaneously measured AHE and the anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films, and observed an exceptionally large ANE at zero magnetic field. We further show that AHE and ANE share a common origin and demonstrate the validity of the Mott relation for the anomalous transport phenomena. 
Yong Pu, Daichi Chiba, Fumihiro Matsukura, Hideo Ohno and Jing Shi