Spin relaxation of localized electrons in n-type semiconductors
  The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium angular momentum is shown to be limited either by hyperfine interaction, or by spin-orbit interaction in course of exchange-induced spin diffusion. The energy relaxation time in the spin system is governed by phonon-assisted hops within pairs of donors with an optimal distance of about 4 Bohr radii. The spin correlation time of the donor-bound electron is determined either by exchange interaction with other localized electrons, or by spin-flip scattering of free conduction-band electrons. A possibility of optical cooling of the spin system of localized electrons is discussed. 
K. V. Kavokin