Near band-edge luminescence of semi-insulating undoped gallium arsenide   at high levels of excitation
  The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped GaAs crystals at 77K on the concentration of background acceptor impurities and the level of excitation in the range from 3x1021 to 6x1022 quantum/(cm2/s) are investigated. The observed dependences are explained by formation of the density tails of states as a result of fluctuations of impurity concentration and participation of localized states of the donor impurity band in radiative transitions. Reduction of many-particle interaction at increasing of N can be connected with increasing of shielding of charge carriers by atoms of impurity. 
V.F. Kovalenko, S.V. Shutov, Ye.A. Baganov, M.M. Smyikalo