A Modular High-Temperature Measurement Set-Up for Semiconductor Device   Characterization
  We demonstrate the capabilities of a high temperature measurement set-up recently developed at our institute. It is dedicated to the characterization of semiconductor devices and test structures in the temperature range from room temperature up to 500 degrees C and higher. A detailed description of the experimental aquipment is given. Its practical use is demonstrated by measuring temperature-dependent charcteristics of silicon VDMOSFET and IGBT devices as well as SiC-diodes. For the silicon devices, numerical simulations based on recently developed high temperature physical models were also performed in order to gain a deeper understanding of the measured data, together with a revalidation of the model parameters. 
P. Borthen, G. Wachutka