Hot-electron noise suppression in n-Si via the Hall effect
  We investigate how hot-electron fluctuations in n-type Si are affected by the presence of an intense (static) magnetic field in a Hall geometry. By using the Monte Carlo method, we find that the known Hall-effect-induced redistribution of electrons among valleys can suppress electron fluctuations with a simultaneous enhancement of the drift velocity. 
F. Ciccarello, S. Zammito, M. Zarcone