Ferromagnetism and spin polarized charge carriers in In$_{2}$O$_{3}$   thin films
  We present evidence for spin polarized charge carriers in In$_2$O$_3$ films. Both In$_2$O$_3$ and Cr doped In$_2$O$_3$ films exhibit room temperature ferromagnetism after vacuum annealing, with a saturation moment of approximately 0.5 emu/cm$^3$. We used Point Contact Andreev Reflection measurements to directly determine the spin polarization, which was found to be approximately 50$\pm$5% for both compositions. These results are consistent with suggestions that the ferromagnetism observed in certain oxide semiconductors may be carrier mediated. 
Raghava P. Panguluri, P. Kharel, C. Sudakar, R. Naik, R.   Suryanarayanan, V.M. Naik, A.G. Petukhov, B. Nadgorny, G. Lawes