Direct strain and elastic energy evaluation in rolled-up semiconductor   tubes by x-ray micro-diffraction
  We depict the use of x-ray diffraction as a tool to directly probe the strain status in rolled-up semiconductor tubes. By employing continuum elasticity theory and a simple model we are able to simulate quantitatively the strain relaxation in perfect crystalline III-V semiconductor bi- and multilayers as well as in rolled-up layers with dislocations. The reduction in the local elastic energy is evaluated for each case. Limitations of the technique and theoretical model are discussed in detail. 
A. Malachias, Ch. Deneke, B. Krause, C. Mocuta, S. Kiravittaya, T. H.   Metzger, O. G. Schmidt