Mobility in Graphene Double Gate Field Effect Transistors
  In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double gated graphene field effect transistors are compared. Even in double-gated graphene FETs, the carrier mobility exceeds the universal mobility of silicon over nearly the entire measured range. At comparable dimensions, reported mobilities for ultra thin body silicon-on-insulator MOSFETs can not compete with graphene FET values. 
M.C. Lemme, T.J. Echtermeyer, M. Baus, B.N. Szafranek, J. Bolten, M.   Schmidt, T. Wahlbrink, H. Kurz