Tuning of metal-insulator transition of two-dimensional electrons at   parylene/SrTiO$_3$ interface by electric field
  Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal transition (IMT) in a two dimensional (2D) electron gas at the interface of insulating SrTiO$_3$ single crystals. Superconductivity was observed in a limited number of devices doped far beyond the IMT, which may imply the presence of 2D metal-superconductor transition. This realization of a two-dimensional metallic state on the most widely-used perovskite oxide is the best manifestation of the potential of oxide electronics. 
H. Nakamura, H. Tomita, H. Akimoto, R. Matsumura, I. H. Inoue, T.   Hasegawa, K. Kono, Y. Tokura, and H. Takagi