InAs Nanowire MOS Capacitors
  We present a capacitance-voltage study for arrays of vertical InAs nanowires. MOS capacitors are obtained by insulating the nanowires with a conformal 10nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface. 
Stefano Roddaro, Kristian Nilsson, Gvidas Astromskas, Lars Samuelson   and Lars-Erik Wernersson, Ovol Karlstrom and Andreas ...