Optically induced transport properties of freely suspended semiconductor   submicron channels
  We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of one to ten milliseconds. 
C. Rossler, K.-D. Hof, S. Manus, S. Ludwig, J. P. Kotthaus, J. Simon,   A. W. Holleitner, D. Schuh, and W. Wegscheider