Anomalous Hall effect in Fe/Cu bilayers
  The scaling of anomalous Hall resistivity on the longitudinal resistivity has been intensively studied in the different magnetic systems, including multilayers and granular films, to examine which mechanism, skew scattering or side-jump, dominates. The basis of the scaling law is that both the resistivities are due to the electron scattering at the imperfections in the materials. By studying of anomalous Hall effect (AHE) in the simple Fe/Cu bilayers, we demonstrate that the measured anomalous Hall effect should not follow the scaling laws derived from skew scattering or side-jump mechanism due to the short-circuit and shunting effects of the non-magnetic layers. 
W.J. Xu, B. Zhang, Z. Wang, S. Chu, W. Li, R.H. Yu and X.X. Zhang