Bit storage by $360^\circ$ domain walls in ferromagnetic nanorings
  We propose a design for the magnetic memory cell which allows an efficient storage, recording, and readout of information on the basis of thin film ferromagnetic nanorings. The information bit is represented by the polarity of a stable 360$^\circ$ domain wall introduced into the ring. Switching between the two magnetization states is achieved by the current applied to a wire passing through the ring, whereby the $360^\circ$ domain wall splits into two charged $180^\circ$ walls, which then move to the opposite extreme of the ring to recombine into a $360^\circ$ wall of the opposite polarity. 
C. B. Muratov and V. V. Osipov