Atmospheric pressure graphitization of SiC(0001)- A route towards   wafer-size graphene layers
  We have investigated epitaxial graphene films grown on SiC(0001) by annealing in an atmosphere of Ar instead of vacuum. Using AFM and LEEM we observe a significantly improved surface morphology and graphene domain size. Hall measurements on monolayer graphene films show a carrier mobility of around 1000 cm^2/Vs at room temperature and 2000 cm^2/Vs at 27K. The growth process introduced here establishes the synthesis of graphene films on a technologically viable basis. 
Konstantin V. Emtsev, Aaron Bostwick, Karsten Horn, Johannes Jobst,   Gary L. Kellogg, Lothar Ley, Jessica L. McChesney, Tai...