Tuneable Capacitor based on dual picks profile of the sacrificial layer
  In this paper, we present a novel dual gap tuneable capacitor process based on the profile of the sacrificial layer. This profile involves a tri-layer photo-resist process with only one mask level. This realization is based on a special profile of the sacrificial layer designed by two picks. The mechanism of the sacrificial layer realisation is dependent on resist thickness, resist formulation (viscosity, type of polymer and/or solvent, additives...), design of the patterned layer (size or width) and the conditions under which this layer is prepared: thermal treatment, etch back processes... In this communication we demonstrate influence of the later parameters and discuss how a dual pick profile was achieved. 
S. Soulimane (LETI), F. Casset (LETI), F. Chapuis (LETI), P.-L.   Charvet (LETI), M. a\"id (LETI)