Direct measurements of the energy flux due to chemical reactions at the   surface of a silicon sample interacting with a SF6 plasma
  Energy exchanges due to chemical reactions between a silicon surface and a SF6 plasma were directly measured using a heat flux microsensor (HFM). The energy flux evolution was compared with those obtained when only few reactions occur at the surface to show the part of chemical reactions. At 800 W, the measured energy flux due to chemical reactions is estimated at about 7 W.cm\^{-2} against 0.4 W.cm\^{-2} for ion bombardment and other contributions. Time evolution of the HFM signal is also studied. The molar enthalpy of the reaction giving SiF4 molecules was evaluated and is consistent with values given in literature. 
Remi Dussart (GREMI), Anne-Lise Thomann (GREMI), Laurianne E. Pichon   (GREMI), Larbi Bedra (GREMI), Nadjib Semmar (GREMI), ...