Mechanism of recrystallization process in epitaxial GaN under dynamic   stress field - Atomistic origin of planar defect formation
  The mechanism of recrystallization in epitaxial (1000) GaN film, introduced by indentation technique, is probed by lattice dynamic studies using Raman spectroscopy. The recrystallized region is identified by Micro-Raman area mapping. Pop-in bursts in loading lines indicate nucleation of dislocations and climb of dislocations. These processes set in plastic motion of lattice atoms under stress field at the center of indentation for the initiation of recrystallization process. A planar defect migration mechanism is evolved. A pivotal role of vacancy migration is pointed out, for the first time, as the rate limiting factor for the dislocation dynamics initiating the recrystallization process in GaN. 
C. R. Das, S. Dhara, H. C. Hsu, L. C. Chen, Y. R. Jeng, A. K. Bhaduri,   Baldev Raj, K. H. Chen, S. K. Albert