Long spin coherence in silicon with an electrical spin trap readout
  Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that the spin-dependent capture and reemission of highly polarized (>95%) conduction electrons by equally highly polarized 31P donor electrons introduces less decoherence than other mechanisms for spin-to-charge conversion. This allows the electrical detection of spin coherence times in excess of 100 microseconds: 50 times longer than the previous maximum for electrically-detected spin readout experiments. 
G. W. Morley, D. R. McCamey, H. A. Seipel, L.-C. Brunel, J. van Tol   and C. Boehme