Investigations of thermometric characteristics of p+-n - type GaP diodes
  The technique of obtaining of p+-n-type gallium phosphide diode epitaxial structures from liquid phase was developed as well as pilot samples of diode temperature sensors were fabricated based on them. Thermometric and current-voltage characteristics of the test diodes were measured in the temperature range of 80 / 520K and their basic technical characteristics were determined. An availability of application of the structures developed as sensing elements of high-temperature heat sensors was shown. 
V.A. Krasnov, Yu.M. Shwarts, M.M. Shwarts, D.P. Kopko, A.M. Fonkich,   S.Yu. Yerochin, S.V. Shutov, N.I Sypko