Scaling Properties of Critical Phase Change Conditions in Ge2Sb2Te5   Nanopillars
  We have measured the critical phase change conditions induced by electrical pulses in Ge2Sb2Te5 nanopillar phase change memory devices by constructing a comprehensive resistance map as a function of pulse parameters (width, amplitude and trailing edge). Our measurements reveal that the cooling scheme and the details of the contact geometry play the dominant role in determining the final phase composition of the device. A three-dimensional finite element model of the electro-thermal physics not only provides good insights into the underlying physical mechanisms of the switching dynamics but also quantitatively accounts for the observed scaling behaviour. 
O. Ozatay, B. Stipe, J. A. Katine and B. D. Terris (Hitachi Global   Storage Technologies-San Jose Research Center)