Semiconductor-based superlens for sub-wavelength resolution below the   dif-fraction limit at extreme ultraviolet frequencies
  We theoretically demonstrate negative refraction and sub-wavelength resolution below the diffraction limit in the UV and extreme UV ranges using semiconductors. The metal-like re-sponse of typical semiconductors such as GaAs or GaP makes it possible to achieve negative refraction and super-guiding in resonant semiconductor/dielectric multilayer stacks, similar to what has been demonstrated in metallo-dielectric photonic band gap structures. The exploita-tion of this basic property in semiconductors raises the possibility of new, yet-untapped ap-plications in the UV and soft x-ray ranges. 
M. A. Vincenti, A. D Orazio, M. G. Cappeddu, Neset Akozbek, M. J.   Bloemer, M. Scalora