Kondo effects in a C_60 single-molecule transistor
  We have used the electromigration technique to fabricate a   $\rm{C_{{60}}}$ single-molecule transistor (SMT). We present a full experimental study as a function of temperature, down to 35 mK, and as a function of magnetic field up to 8 T in a SMT with odd number of electrons, where the usual spin-1/2 Kondo effect occurs, with good agreement with theory. In the case of even number of electrons, a low temperature magneto-transport study is provided, which demonstrates a Zeeman splitting of the zero-bias anomaly at energies well below the Kondo scale. 
N. Roch, C. B. Winkelmann, S. Florens, V. Bouchiat, W. Wernsdorfer, F.   Balestro