Broadband electrically detected magnetic resonance of phosphorus donors   in a silicon field-effect transistor
  We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At milli-kelvin temperatures, continuous wave spectra were obtained up to 40 GHz, using both magnetic field and microwave frequency modulation. The spectra reveal the hyperfine-split electron spin resonances characteristic for Si:P and a central feature which displays the fingerprint of spin-spin scattering in the two-dimensional electron gas. 
L.H. Willems van Beveren, H. Huebl, D.R. McCamey, T. Duty, A.J.   Ferguson, R.G. Clark, M.S. Brandt