Electron drift velocity control in GaAs-in-Al2O3 quantum wire transistor   structure due to the electron scattering rate alteration
  Electron transport in the transistor structure based on thin undoped GaAs-in-Al2O3 quantum wire is simulated by ensemble Monte-Carlo method taking into account electron scattering by the phonons and surface roughness. The influence of surface roughness height on electron drift velocity at 77 and 300 K is investigated for the values of longitudinal electric field strength of 0.1 and 1.0 kV/cm. A possibility of electron drift velocity control due to variation of the bias applied to the gates, which results in the electron scattering rate alteration, is ascertained. 
Andrei Borzdov, Dmitry Pozdnyakov, Vladimir Borzdov