High domain wall velocity at zero magnetic field induced by low current   densities in spin-valve nanostripes
  Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below $10^{12} \unit{A/m^2}$, suggesting that these trilayer systems are promising for applications in domain wall devices in case of well controlled pinning positions. Vertical spin currents in these structures provide a potential explanation for the increase in domain wall velocity at low current densities. 
Stefania Pizzini (NEEL), Vojtech Uhlir (NEEL), Jan Vogel (NEEL),   Nicolas Rougemaille (NEEL), Sana Laribi (UMP CNRS/THALES)...