Resistance Quenching in Graphene Interconnects
  We investigated experimentally the high-temperature electrical resistance of graphene interconnects. The test structures were fabricated using the focused ion beam from the single and bi-layer graphene produced by mechanical exfoliation. It was found that as temperature increases from 300 to 500K the resistance of the single- and bi-layer graphene interconnects drops down by 30% and 70%, respectively. The quenching and temperature dependence of the resistance were explained by the thermal generation of the electron-hole pairs and acoustic phonon scattering. The obtained results are important for the proposed applications of graphene as interconnects in integrated circuits. 
Q. Shao, G. Liu, D. Teweldebrhan and A.A. Balandin