Defect-free ZnSe nanowire and nano-needle nanostructures
  We report on the growth of ZnSe nanowires and nano-needles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn--Se flux ratio. By employing a combined MBE growth of nanowires and nano-needles without any post-processing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission electron microscopy and by photoluminescence studies. 
Thomas Aichele, Adrien Tribu, Catherine Bougerol, Kuntheak Kheng,   Regis Andre and Serge Tatarenko