Strain-Induced Conduction Band Spin Splitting in GaAs from First   Principles Calculations
  We use a recently developed self-consistent GW approximation to present first principles calculations of the conduction band spin splitting in GaAs under [110] strain. The spin orbit interaction is taken into account as a perturbation to the scalar relativistic hamiltonian. These are the first calculations of conduction band spin splitting under deformation based on a quasiparticle approach; and because the self-consistent GW scheme accurately reproduces the relevant band parameters, it is expected to be a reliable predictor of spin splittings. We also discuss the spin relaxation time under [110] strain and show that it exhibits an in-plane anisotropy, which can be exploited to obtain the magnitude and sign of the conduction band spin splitting experimentally. 
Athanasios N. Chantis, Manuel Cardona, Niels E. Christensen, Darryl L.   Smith, Mark van Schilfgaarde, Takao Kotani, Axel Sv...