A solution in 3 dimensions for current in a semiconductor under high   level injection from a point contact
  The standard equations for semiconductor device analysis were solved by specifying the electron and hole current injected at a small contact, assuming high-level injection. Calculated current-voltage characteristics were fit to measurements of a single point breakdown in an ultrathin dielectric. It was found that the minority carrier injection level was about 70%. 
Mike W. Denhoff