Photoconductive gain in semiconductor quantum wires
  We report on a photoconductive gain in semiconductor quantum wires which are lithographically defined in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which shift the one-dimensional subbands of the quantum wire. Here we demonstrate that the effect persists up to a temperature of about 17 Kelvin. 
K.-D. Hof, C. Rossler, S. Manus, J.P. Kotthaus, A.W. Holleitner, D.   Schuh, W. Wegscheider