Modulation Doping of a Mott Quantum Well by a Proximate Polar   Discontinuity
  We present evidence for hole injection into LaAlO3/LaVO3/LaAlO3 quantum wells near a polar surface of LaAlO3 (001). As the surface is brought in proximity to the LaVO3 layer, an exponential drop in resistance and a decreasing positive Seebeck coefficient is observed below a characteristic coupling length of 10-15 unit cells. We attribute this behavior to a crossover from an atomic reconstruction of the AlO2-terminated LaAlO3 surface to an electronic reconstruction of the vanadium valence. These results suggest a general approach to tunable hole-doping in oxide thin film heterostructures. 
T. Higuchi, Y. Hotta, T. Susaki, A. Fujimori, and H. Y. Hwang