Early stage formation of graphene on the C-face of 6H-SiC
  An investigation of the early stage formation of graphene on the C-face of 6H-SiC is presented. We show that the sublimation of few atomic layers of Si out of the SiC substrate is not homogeneous. In good agreement with the results of theoretical calculations it starts from defective sites, mainly dislocations that define nearly circular flakes, which have a pyramidal, volcano-like, shape with a center chimney where the original defect was located. At higher temperatures, complete conversion occurs but, again, it is not homogeneous. Within the sample surface the intensity of the Raman G and 2D bands, evidences non-homogeneous thickness. 
N. Camara, G. Rius, J.-R. Huntzinger, A. Tiberj, L. Magaud, N.   Mestres, P. Godignon, J. Camassel