Coexisting Holes and Electrons in High-Tc Materials: Implications from   Normal State Transport
  Normal state resistivity and Hall effect are shown to be successfully modeled by a two-band model of holes and electrons that is applied self-consistently to (i) DC transport data reported for eight bulk-crystal and six oriented-film specimens of YBa2Cu3O7-{\delta}, and (ii) far-infrared Hall angle data reported for YBa2Cu3O7-{\delta} and Bi2Sr2CaCu2O8+{\delta}. The electron band exhibits extremely strong scattering; the extrapolated DC residual resistivity of the electronic component is shown to be consistent with the previously observed excess thermal conductivity and excess electrodynamic conductivity at low temperature. Two-band hole-electron analysis of Hall angle data suggest that the electrons possess the greater effective mass. 
Dale R. Harshman (1, 2 and 3), John D. Dow (3 and 4) and Anthony T.   Fiory (5) ((1) Physikon Research Corporation, (2) Univ...
cond-mat.supr-con