Crystal structure and electronic structure of quaternary semiconductors   Cu$_2$ZnTiSe$_4$ and Cu$_2$ZnTiS$_4$ for solar cell absorber
  We design two new I2-II-IV-VI4 quaternary semiconductors Cu$_2$ZnTiSe$_4$ and Cu$_2$ZnTiS$_4$, and systematically study the crystal and electronic structure by employing first-principles electronic structure calculations. Among the considered crystal structures, it is confirmed that the band gaps of Cu$_2$ZnTiSe$_4$ and Cu$_2$ZnTiS$_4$ originate from the full occupied Cu 3$d$ valence band and unoccupied Ti 3$d$ conducting band, and kesterite structure should be the ground state. Furthermore, our calculations indicate that Cu$_2$ZnTiSe$_4$ and Cu$_2$ZnTiS$_4$ have comparable band gaps with Cu$_2$ZnTSe$_4$ and Cu$_2$ZnTS$_4$, but almost twice larger absorption coefficient $\alpha(\omega)$. Thus, the materials are expected to be candidate materials for solar cell absorber. 
Xiaofeng Wang, Junjie Li, Zhenjie Zhao, Sumei Huang and Wenhui Xie
cond-mat.mtrl-sci