Transport Properties of Graphene Nanoribbon Transistors on Transport   Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition   Grown Wafer-Scale Graphene
  Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to 12 nm have been fabricated by electron beam lithography using a wafer-scale chemical vapor deposition (CVD) process to form the graphene. The GNR FETs show drain-current modulation of approximately 10 at 300 K, increasing to nearly 106 at 4 K. The strong temperature dependence of the minimum current indicates the opening of a bandgap for CVD-grown GNR-FETs. The extracted bandgap is estimated to be around 0.1 eV by differential conductance methods. This work highlights the development of CVD-grown large-area graphene and demonstrates the opening of a bandgap in nanoribbon transistors. 
Wan Sik Hwang, Kristof Tahy, Xuesong Li, Huili (Grace) Xing, Alan C.   Seabaugh, Chun-Yung Sung, and Debdeep Jena
cond-mat.mes-hall cond-mat.mtrl-sci