Wetting layer evolution and its temperature dependence during self   assembly of InAs/GaAs quantum dots
  For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy (RDS) and analyzed with a rate equation model. The WL thicknesses showed a monotonic increase at relatively low growth temperatures but a first increase and then decrease at higher temperatures, which were unexpected from the thermodynamic understanding. By adopting a rate equation model, the temperature dependence of QD growth was assigned as the origin of different WL evolutions. A brief discussion on the indium desorption was also given. Those results gave hints of the kinetic aspects of QD self-assembly. 
Hongyi Zhang, Yonghai Chen, Guanyu Zhou, Chenguang Tang, and Zhanguo   Wang
cond-mat.mes-hall