Band gap tuning in ferroelectric Bi4Ti3O12 by alloying LaTMO3 (TM = Ti,   V, Cr, Mn, Co, Ni, and Al)
  We fabricated ferroelectric Bi4Ti3O12 (BiT) single crystalline thin films site-specifically substituted with LaTMO3 (TM = Al, Ti, V, Cr, Mn, Co, and Ni) on SrTiO3 substrates by pulsed laser epitaxy. When transition metals are incorporated into a certain site of the BiT, some of BiT-LaTMO3 showed a substantially decreased band gap, coming from the additional optical transition between oxygen 2p and TM 3d states. Specifically, all alloys with Mott insulators revealed a possibility of band gap reduction. Among them, BiT-LaCoO3 showed the largest band gap reduction by ~1 eV, positioning itself as a promising material for highly efficient opto-electronic devices. 
Woo Seok Choi and Ho Nyung Lee
cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el