Laser Directly Written Junctionless In-plane-Gate Neuron Thin Film   Transistors with AND Logic Function
  Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature with a laser scribing process. The neuron transistors are composed of a bottom ITO floating gate and multiples of two in-plane control gates. The control gates, coupling with the floating gate, control the "on" and "off" of the transistor. Effective field-effect modulation of the drain current has been realized. AND logic is demonstrated on a dual in-plane gate neuron transistor. The developed laser scribing technology is highly desirable in terms of the fabrication of high performance neuron transistors with low-cost. 
Li Qiang Zhu, Guo Dong Wu, Ju Mei Zhou, Wei Dou, Hong Liang Zhang, and   Qing Wan
cond-mat.mtrl-sci cond-mat.mes-hall