Work, free energy and dissipation in voltage driven single-electron   transitions
  We apply the general procedure presented by Jarzynski in [1] to the problem of dissipation in a voltage-driven single-electron box. We obtain the expression of dissipated work, and find its relation to the dissipation Q obtained in [2]. We show that the two quantities are identical in common gate protocols where the system makes a transition for sure. 
J. P. Pekola and O.-P. Saira
cond-mat.mes-hall