Transport Properties of Graphene Nanoroads in Boron-Nitride Sheets
  We demonstrate that the one-dimensional (1D) transport channels that appear in the gap when graphene nanoroads are embedded in boron-nitride (BN) sheets are more robust when they are inserted at AB/BA grain boundaries. Our conclusions are based on ab-initio electronic structure calculations for a variety of different crystal orientations and bonding arrangements at the BN/C interfaces. This property is related to the valley-Hall conductivity present in the BN band structure and to the topologically protected kink states that appear in continuum Dirac models with position dependent masses. 
Jeil Jung, Zhenhua Qiao, Qian Niu, and Allan H. MacDonald
cond-mat.mes-hall