Towards spin injection from silicon into topological insulators:   Schottky barrier between Si and Bi2Se3
  A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin (<100nm) exfoliated crystals of Bi2Se3 on n-type silicon with independent electrical contacts to silicon and Bi2Se3. Analysis of the temperature dependence of thermionic emission in reverse bias indicates a barrier height of 0.34 eV at the Si-Bi2Se3 interface. This robust Schottky barrier opens the possibility of novel device designs based on sub-band gap internal photoemission from Bi2Se3 into Si. 
C. Ojeda-Aristizabal, M. S. Fuhrer, N. P Butch, J. Paglione and I.   Appelbaum
cond-mat.mes-hall