Quasi-Particle Tunneling in Anti-Pfaffian Quantum Hall State
  We study tunneling phenomena at the edge of the anti-Pfaffian quantum Hall state at the filling factor $\nu=5/2$. The edge current in a single point-contact is considered. We focus on nonlinear behavior of two-terminal conductance with the increase in negative split-gate voltage. Expecting the appearance of the intermediate conductance plateau we calculate the value of its conductance by using the renormalization group (RG) analysis. Further, we show that non-perturbative quasi-particle tunneling is effectively described as perturbative electron tunneling by the instanton method. The two-terminals conductance is written as a function of the gate voltage. The obtained results enable us to distinguish the anti-Pfaffian state from the Pfaffian state experimentally. 
Toru Ito, Kentaro Nomura, Naokazu Shibata
cond-mat.mes-hall cond-mat.str-el