Measurement of Filling-Factor-Dependent Magnetophonon Resonances in   Graphene Using Raman Spectroscopy
  We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45T. This reveals a filling-factor-dependent, multi-component anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E$_{2g}$ phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudo-magnetic fields lead to increased scattering intensity inside the anti-crossing gap, consistent with the experiment. 
Y. Kim, J. M. Poumirol, A. Lombardo, N. G. Kalugin, T. Georgiou, Y. J.   Kim, K. S. Novoselov, A. C. Ferrari, J. Kono, O. Ka...
cond-mat.mes-hall