Challenges for Silicon Pixel Sensors at the European XFEL
  A systematic experimental study of the main challenges for silicon-pixel sensors at the European XFEL is presented. The high instantaneous density of X-rays and the high repetition rate of the XFEL pulses result in signal distortions due to the plasma effect and in severe radiation damage. The main parameters of X-ray-radiation damage have been determined and their impact on p+n sensors investigated. These studies form the basis of the optimized design of a pixel-sensor for experimentation at the European XFEL. 
Robert Klanner, Julian Becker, Eckhart Fretwurst, Ioana Pintilie,   Thomas Poehlsen, J\"orn Schwandt, Jiaguo Zhang
physics.ins-det hep-ex