Dynamical Spin Injection into p-type Germanium at Room Temperature
  We demonstrate dynamical spin injection into p-type germanium (Ge) at room temperature (RT) using spin pumping. The generated pure spin current is converted to a charge current by the inverse spin-Hall effect (ISHE) arising in the p-type Ge sample. A clear electromotive force due to the ISHE is detected at RT. The spin-Hall angle for p-type Ge is estimated to be {\theta}SHE = 2.6x10-3 at RT, which is much larger than that for p-type Si. 
Mariko Koike (1), Eiji Shikoh (1), Yuichiro Ando (1), Teruya Shinjo   (1), Shinya Yamada (2), Kohei Hamaya (2), Masashi Shir...
cond-mat.mtrl-sci