Self-Consistent C-V Characterization of Depletion Mode Buried Channel   InGaAs/InAs Quantum Well FET Incorporating Strain Effects
  We investigated Capacitance-Voltage (C-V) characteristics of the Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent method incorporating Quantum Mechanical (QM) effects. Though the experimental results of C-V for enhancement type device is available in recent literature, a complete characterization of electrostatic property of depletion type Buried Channel Quantum Well FET (QWFET) structure is yet to be done. C-V characteristics of the device is studied with the variation of three important process parameters: Indium (In) composition, gate dielectric and oxide thickness. We observed that inversion capacitance and ballistic current tend to increase with the increase in Indium (In) content in InGaAs barrier layer. 
Imtiaz Ahmed, Iftikhar Ahmad Niaz, Md. Hasibul Alam, Nadim Chowdhury,   Zubair Al Azim, Quazi Deen Mohd Khosru
physics.gen-ph