Growth and characterization of n-type electron-induced ferromagnetic   semiconductor (In,Fe)As
  We show that by introducing isoelectronic iron (Fe) magnetic impurities and Beryllium (Be) double-donor atoms into InAs, it is possible to grow a n-type ferromagnetic semiconductor (FMS) with the ability to control ferromagnetism by both Fe and independent carrier doping by low-temperature molecular-beam epitaxy. We demonstrate that (In,Fe)As doped with electrons behaves as an n-type electron-induced FMS. This achievement opens the way to realize novel spin-devices such as spin light-emitting diodes or spin field-effect transistors, as well as helps understand the mechanism of carrier-mediated ferromagnetism in FMSs. 
Pham Nam Hai, Le Duc Anh, Shyam Mohan, Tsuyoshi Tamegai, Masaya   Kodzuka, Tadakatsu Ohkubo, Kazuhiro Hono, and Masaaki Tanaka
cond-mat.mtrl-sci cond-mat.mes-hall