Electric Field Control of the Verwey Transition and Induced   Magnetoelectric Effect in Magnetite
  We incorporate single crystal Fe$_3$O$_4$ thin films into a gated device structure and demonstrate the ability to control the Verwey transition with static electric fields. The Verwey transition temperature ($T_V$) increases for both polarities of the electric field, indicating the effect is not driven by changes in carrier concentration. Energetics of induced electric polarization and/or strain within the Fe$_3$O$_4$ film provide a possible explanation for this behavior. Electric field control of the Verwey transition leads directly to a large magnetoelectric effect with coefficient of 585 pT m/V. 
Jared J. I. Wong, Adrian G. Swartz, Renjing Zheng, Wei Han, Roland K.   Kawakami
cond-mat.str-el cond-mat.mtrl-sci