Weak localization of holes in high-mobility heterostructures
  Theory of weak localization is developed for two-dimensional holes in semiconductor heterostructures. Ballistic regime of weak localization where the backscattering occurs from few impurities is studied with account for anisotropic momentum scattering of holes. The transition from weak localization to anti-localization is demonstrated for long dephasing times. For stronger dephasing the conductivity correction is negative at all hole densities due to non-monotonous dependence of the spin relaxation time on the hole wavevector. The anomalous temperature dependent correction to the conductivity is calculated. We show that the temperature dependence of the conductivity is non-monotonous at moderate hole densities. 
F. V. Porubaev and L. E. Golub
cond-mat.mes-hall cond-mat.dis-nn