Effect of crystallographic anisotropy on the resistance switching   phenomenon in perovskites
  Resistance switching effects in metal/perovskite contacts based on epitaxial c-axis oriented Y-Ba-Cu-O (YBCO) thin films with different crystallographic orientations have been studied. Three types of Ag/YBCO junctions with the contact restricted to (i) c-axis direction, (ii) ab-plane direction, and (iii) both were designed and fabricated, and their current-voltage characteristics have been measured. The type (i) junctions exhibited conventional bipolar resistance switching behavior, whereas in other two types the low-resistance state was unsteady and their resistance quickly relaxed to the initial high-resistance state. Physical mechanism based on the oxygen diffusion scenario, explaining such behavior, is discussed. 
T. Plecenik, M. Tomasek, M. Belogolovskii, M. Truchly, M. Gregor, J.   Noskovic, M. Zahoran, T. Roch, I. Boylo, M. Spankova,...
cond-mat.mes-hall cond-mat.mtrl-sci