20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with   EOT=1.2nm and Lowest SS=63mV/dec
  In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equivalent oxide thickness (EOT) and nanowire width (WNW) scaling down to 1.2nm and 20nm, respectively. SS and DIBL as low as 63mV/dec and 7mV/V have been demonstrated, indicating excellent interface quality and scalability. Highest ION = 0.63mA/{\mu}m and gm = 1.74mS/{\mu}m have also been achieved at VDD=0.5V, showing great promise of InGaAs GAA technology for 10nm and beyond high-speed low- power logic applications. 
J. J. Gu, X. W. Wang, H. Wu, J. Shao, A. T. Neal, M. J. Manfra, R. G.   Gordon, P. D. Ye
cond-mat.mes-hall cond-mat.mtrl-sci