Mott-Hubbard localization in model of electronic subsystem of doped   fullerides
  Microscopical model of a doped fulleride electronic subsystem taking into account the triple orbital degeneracy of energy states is considered within the configurational-operator approach. Using the Green function method the energy spectrum of the model at integer band filling $n=1$ is calculated, which case corresponds to $AC_{60}$ compounds. Possible correlation-driven metal-insulator transition in the model is discussed. 
Yuriy Dovhopyaty, Leonid Didukh, Oleksandr Kramar, Yuriy Skorenkyy,   Yuriy Drohobitskyy
cond-mat.str-el