Possible superconductivity in multi-layer-graphene by application of a   gate voltage
  The carrier density in tens of nanometers thick graphite samples (multi-layer-graphene, MLG) has been modified by applying a gate voltage ($V_g$) perpendicular to the graphene planes. Surface potential microscopy shows inhomogeneities in the carrier density ($n$) in the sample near surface region and under different values of $V_g$ at room temperature. Transport measurements on different MLG samples reveal that under a large enough applied electric field these regions undergo a superconducting-like transition at $T \lesssim 17$ K. A magnetic field applied parallel or normal to the graphene layers suppresses the transition without changing appreciably the transition temperature. 
A. Ballestar, P. Esquinazi, J. Barzola-Quiquia, S. Dusari, F. Bern, R.   R. da Silva and Y. Kopelevich
cond-mat.supr-con cond-mat.str-el