Self-compensation in highly n-type InN
  Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples. 
C. Rauch (1), F. Tuomisto (1), P. D. C. King (2), T. D. Veal (3), H.   Lu (4), and W. J. Schaff (4) ((1) Department of Appli...
cond-mat.mtrl-sci cond-mat.other