Topological insulator quantum dot with tunable barriers
  Thin (6-7 quintuple layer) topological insulator Bi2Se3 quantum dot devices are demonstrated using ultrathin (2~4 quintuple layer) Bi2Se3 regions to realize semiconducting barriers which may be tuned from Ohmic to tunneling conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with large charging energy >5 meV, with additional features implying excited states. 
Sungjae Cho, Dohun Kim, Paul Syers, Nicholas P. Butch, Johnpierre   Paglione, and Michael S. Fuhrer
cond-mat.mes-hall cond-mat.mtrl-sci