Single Dirac-cone on the Cs-covered topological insulator surface   Sb2Te3(0001)
  Using angle-resolved photoelectron spectroscopy we investigate the surface electronic structure of the three-dimensional topological insulator (TI) Sb2Te3(0001). Our data show the presence of a topological surface state in the bulk energy gap with the Dirac-point located above the Fermi level. The adsorption of Cs-atoms on Sb2Te3(0001) gives rise to a downward energy shift of the electronic valence band states which saturates at a value of ~200 meV. For the saturation coverage the Dirac-point of the linearly dispersive surface state resides in close proximity to the Fermi level. The electronic structure of the Cs/Sb2Te3 interface therefore considerably deviates from previously studied metal-TI interfaces based on the isostructural compound Bi2Se3 which points to the importance of atomic composition in these hetero systems. 
Christoph Seibel, Henriette Maa{\ss}, Minoru Ohtaka, Sebastian   Fiedler, Christian J\"unger, Chul-Hee Min, Hendrik Bentmann...
cond-mat.mes-hall cond-mat.mtrl-sci