Field-Effect Devices Utilizing LaAlO$_3$-SrTiO$_3$ Interfaces
  Using LaAlO$_3$-SrTiO$_3$ bilayers, we have fabricated field-effect devices that utilize the two-dimensional electron liquid generated at the bilayers' {\textit n}-type interfaces as drain-source channels and the LaAlO$_3$ layers as gate dielectrics. With gate voltages well below 1\,V, the devices are characterized by voltage gain and current gain. The devices were operated at temperatures up to 100\,{\deg}C. 
B. F\"org, C. Richter, J. Mannhart
cond-mat.mtrl-sci cond-mat.str-el