Effect of electron-electron interaction near the metal-insulator   transition in doped semiconductors studied within the local density   approximation
  We report a numerical analysis of Anderson localization in a model of a doped semiconductor. The model incorporates the disorder arising from the random spatial distribution of the donor impurities and takes account of the electron-electron interactions between the carriers using density functional theory in the local density approximation. Preliminary results suggest that the model exhibits a metal-insulator transition. 
Yosuke Harashima and Keith Slevin
cond-mat.mtrl-sci cond-mat.dis-nn