Electric-field control of the magnetic anisotropy in an ultrathin   (Ga,Mn)As/(Ga,Mn)(As,P) bilayer
  We report on the electric control of the magnetic anisotropy in an ultrathin ferromagnetic (Ga,Mn)As/(Ga,Mn)(As,P) bilayer with competing in-plane and out-of-plane anisotropies. The carrier distribution and therefore the strength of the effective anisotropy is controlled by the gate voltage of a field effect device. Anomalous Hall Effect measurements confirm that a depletion of carriers in the upper (Ga,Mn)As layer results in the decrease of the in-plane anisotropy. The uniaxial anisotropy field is found to decrease by a factor ~ 4 over the explored gate-voltage range, so that the transition to an out-of-plane easy-axis configuration is almost reached. 
Tarik Niazi (LPN), Mathieu Cormier (LPN), Damien Lucot (LPN), Ludovic   Largeau (LPN), Vincent Jeudy (LPS), Joel Cibert (NEE...
cond-mat.mtrl-sci