Size Distribution and Its Scaling Behavior of InAlAs/AlGaAs Quantum Dots   Grown on GaAs by Molecular Beam Epitaxy
  We studied the size distribution and its scaling behavior of self-assembled InAlAs/AlGaAs quantum dots (QDs) grown on GaAs with the Stranski-Krastanov (SK) mode by molecular beam epitaxy (MBE), at both 480{\deg}C and 510{\deg}C, as a function of InAlAs coverage. A scaling function of the volume was found for the first time in ternary alloy QDs. The function was similar to that of InAs/GaAs QDs, which agreed with the scaling function for the two-dimensional submonolayer homoepitaxy simulation with a critical island size of i = 1. However, a character of i = 0 was also found as a tail in the large volume. 
X. M. Lu, M. Koyama, Y. Izumi, Y. Nakata, S. Adachi, S. Muto
cond-mat.mtrl-sci cond-mat.mes-hall