Spin dependent recombination based magnetic resonance spectroscopy of   bismuth donor spins in silicon at low magnetic fields
  Low-field (6-110 mT) magnetic resonance of bismuth (Bi) donors in silicon has been observed by monitoring the change in photoconductivity induced by spin dependent recombination. The spectra at various resonance frequencies show signal intensity distributions drastically different from that observed in conventional electron paramagnetic resonance, attributed to different recombination rates for the forty possible combinations of spin states of a pair of a Bi donor and a paramagnetic recombination center. An excellent tunability of Bi excitation energy for the future coupling with superconducting flux qubits at low fields has been demonstrated. 
P. A. Mortemousque, T. Sekiguchi, C. Culan, M. P. Vlasenko, R. G.   Elliman, L. S. Vlasenko, K. M. Itoh
cond-mat.mtrl-sci