Long spin relaxation times in wafer scale epitaxial graphene on   SiC(0001)
  We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau_S in monolayer graphene, while the spin diffusion coefficient D_S is strongly reduced compared to typical results on exfoliated graphene. The increase of tau_S is probably related to the changed substrate, while the cause for the small value of D_S remains an open question. 
T. Maassen, J. J. van den Berg, N. IJbema, F. Fromm, T. Seyller, R.   Yakimova, and B. J. van Wees
cond-mat.mes-hall