Non-volatile gated variable resistor based on doped La_{2}CuO_{4} and   SrTiO_{3} heterostructures
  Gated variable resistors were manufactured by depositing epitaxial heterostructures of doped La_{2}CuO_{4} and SrTiO_{3} layers. Their conductance change as function of write current I and write time t followed a simple empirical law of the form {\Delta}G/G = CI^A t^B. This behavior is in agreement with ionic transport that accelerates exponentially with electrical field strength. 
Dieter Weber and Ulrich Poppe
cond-mat.mtrl-sci cond-mat.mes-hall