Metal-to-insulator transition in anatase TiO2 thin films induced by   growth rate modulation
  We demonstrate control of the carrier density of single phase anatase TiO2 thin films by nearly two orders of magnitude by modulating the growth kinetics during pulsed laser deposition, under fixed thermodynamic conditions. The resistivity and the intensity of the photoluminescence spectra of these TiO2 samples, both of which correlate with the number of oxygen vacancies, are shown to depend strongly on the growth rate. A quantitative model is used to explain the carrier density changes. 
T. Tachikawa, M. Minohara, Y. Nakanishi, Y. Hikita, M. Yoshita, H.   Akiyama, C. Bell, and H. Y. Hwang
cond-mat.mtrl-sci