Low temperature transport properties of multigraphene structures on   6H-SiC obtained by thermal graphitization: evidences of a presence of nearly   perfect graphene layer
  Transport properties of multigraphene layers on 6H-SiC substrates fabricated by thermal graphitization of SiC were studied. The principal result is that these structures were shown to contain a nearly perfect graphene layer situated between the SiC substrate and multgraphene layer. It was found that the curves of magnetoresistance and Shubnikov- de Haas oscillations shown the features, typical for single-layered graphene. The low temperature resistance demonstrated an increase with temperature increase, which also corresponds to a behavior typical for single-layered graphene (antilocalization). However at higher temperatures the resistance decreased with an increase of temperature, which corresponds to a weak localization. We believe that the observed behavior can be explained by a parallel combination of contributions to the conductivity of single-layered graphene and of multigraphene, the latter allowing to escape damages of the graphene by atmosphere effect. 
A.A.Lebedev, N.V.Agrinskaya, V.A.Beresovets, V.I.Kozub, S.P.Lebedev,   A.A.Sitnikova
cond-mat.mtrl-sci