Infrared spectroscopy of hole doped ABA-stacked trilayer graphene
  Using infrared spectroscopy, we investigate bottom gated ABA-stacked trilayer graphene subject to an additional environment-induced p-type doping. We find that the Slonczewski-Weiss-McClure tight-binding model and the Kubo formula reproduce the gate voltage-modulated reflectivity spectra very accurately. This allows us to determine the charge densities and the potentials of the {\pi}-band electrons on all graphene layers separately and to extract the interlayer permittivity due to higher energy bands. 
N. Ubrig, P. Blake, D. van der Marel, A. B. Kuzmenko
cond-mat.mes-hall