Simulation of boron diffusion during low-temperature annealing of   implanted silicon
  Modeling of ion-implanted boron redistribution in silicon crystals during low-temperature annealing with a small thermal budget has been carried out. It was shown that formation of "tails"' in the low-concentration region of impurity profiles occurs due to the long-range migration of boron interstitials 
O. I. Velichko and A. P. Kavaliova
cond-mat.mtrl-sci math-ph math.MP