Epitaxial graphene morphologies probed by weak (anti)-localization
  We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the growth conditions, we observe anti-localization and/or localization which can be understood in term of weak-localization related to quantum interferences. The inferred characteristic diffusion lengths are in agreement with the scanning tunneling microscopy and the theoretical model which describe the "pure" mono-layer and bilayer of graphene [MacCann et al,. Phys. Rev. Lett. 97, 146805 (2006)]. 
Ather Mahmood (NEEL), C\'ecile Naud (NEEL), Cl\'ement Bouvier (NEEL),   Fanny Hiebel (NEEL), Pierre Mallet (NEEL), Jean-Yves...
cond-mat.mes-hall cond-mat.mtrl-sci