Polaron relaxation in ferroelectric thin films
  We report a dielectric relaxation in ferroelectric thin films of the ABO3 family. We have compared films of different compositions with several growth modes: sputtering (with and without magnetron) and sol-gel. The relaxation was observed at cryogenic temperature (T<100K) for frequencies from 100Hz up to 10MHz. This relaxation activation energy is always lower than 200meV. It is very similar to the polaron relaxation that we reported in the parent bulk perovskites. Being independent of the materials size, morphology and texture, this relaxation can be a useful probe of defects in actual integrated capacitors with no need for specific shaping 
E. Arveux, D. Levasseur, A. Rousseau, S. Payan, M. Maglione, G. Guegan
cond-mat.mtrl-sci