Measurement and simulation of anisotropic magnetoresistance in single   GaAs/MnAs core/shell nanowires
  We report four probe measurements of the low field magnetoresistance in single core/shell GaAs/MnAs nanowires synthesized by molecular beam epitaxy, demonstrating clear signatures of anisotropic magnetoresistance that track the field-dependent magnetization. A comparison with micromagnetic simulations reveals that the principal characteristics of the magnetoresistance data can be unambiguously attributed to the nanowire segments with a zinc blende GaAs core. The direct correlation between magnetoresistance, magnetization and crystal structure provides a powerful means of characterizing individual hybrid ferromagnet/semiconductor nanostructures. 
J. Liang, J. Wang, A. Paul, B. J. Cooley, D. W. Rench, N. S. Dellas,   S. E. Mohney, R. Engel-Herbert and N. Samarth
cond-mat.mes-hall cond-mat.mtrl-sci