Growth and band alignment of Bi2Se3 topological insulator on   H-terminated Si(111) van der Waals surface
  The van der Waals epitaxy of single crystalline Bi2Se3 film was achieved on hydrogen passivated Si(111) (H:Si) substrate by physical vapor deposition. Valence band structures of Bi2Se3/H:Si heterojunction were investigated by X-ray Photoemission Spectroscopy and Ultraviolet Photoemission Spectroscopy. The measured Schottky barrier height at the Bi2Se3-H:Si interface was 0.31 eV. The findings pave the way for economically preparing heterojunctions and multilayers of layered compound families of topological insulators. 
Handong Li, Lei Gao, Hui Li, Gaoyun Wang, Jiang Wu, Zhihua Zhou,   Zhiming Wang
cond-mat.mtrl-sci