STM investigation of structural properties of Si layers deposited on   Si(001) vicinal surfaces
  This communication covers investigation of the structural properties of surfaces of Si epitaxial layers deposited on different Si(001) vicinal substrates. We have shown processes of generation and growth of surface defects to depend on tilt direction of a Si(001) wafer and epilayer growth mode. We suppose these effects to be connected with mutual interaction of monoatomic steps. 
L.V. Arapkina, V. A. Chapnin, K. V. Chizh, L. A. Krylova, V. A. Yuryev
cond-mat.mtrl-sci