Small-signal amplifier based on single-layer MoS2
  In this Letter we demonstrate the operation of an analog small-signal amplifier based on single-layer MoS2, a semiconducting analogue of graphene. Our device consists of two transistors integrated on the same piece of single-layer MoS2. The high intrinsic band gap of 1.8 eV allows MoS2-based amplifiers to operate with a room temperature gain of 4. The amplifier operation is demonstrated for the frequencies of input signal up to 2 kHz preserving the gain higher than 1. Our work shows that MoS2 can effectively amplify signals and that it could be used for advanced analog circuits based on two-dimensional materials. 
Branimir Radisavljevic, Michael B. Whitwick and Andras Kis
cond-mat.mes-hall cond-mat.mtrl-sci