Transport Through an Electrostatically Defined Quantum Dot Lattice in a   Two-Dimensional Electron Gas
  Quantum dot lattices (QDLs) have the potential to allow for the tailoring of optical, magnetic and electronic properties of a user-defined artificial solid. We use a dual gated device structure to controllably tune the potential landscape in a GaAs/AlGaAs two-dimensional electron gas, thereby enabling the formation of a periodic QDL. The current-voltage characteristics, I(V), follow a power law, as expected for a QDL. In addition, a systematic study of the scaling behavior of I(V) allows us to probe the effects of background disorder on transport through the QDL. Our results are particularly important for semiconductor-based QDL architectures which aim to probe collective phenomena. 
Srijit Goswami, M. A. Aamir, Christoph Siegert, Michael Pepper, Ian   Farrer, David A. Ritchie and Arindam Ghosh
cond-mat.mes-hall