Dispersive Readout of a Few-Electron Double Quantum Dot with Fast rf   Gate-Sensors
  We report the dispersive charge-state readout of a double quantum dot in the few-electron regime using the in situ gate electrodes as sensitive detectors. We benchmark this gate-sensing technique against the well established quantum point contact (QPC) charge detector and find comparable performance with a bandwidth of 10 MHz and an equivalent charge sensitivity of 6.3 x 10-3 e/ \sqrt Hz. Dispersive gate-sensing alleviates the burden of separate charge detectors for quantum dot systems and promises to enable readout of qubits in scaled-up arrays. 
J. I. Colless, A. C. Mahoney, J. M. Hornibrook, A. C. Doherty, D. J.   Reilly, H. Lu and A. C. Gossard
cond-mat.mes-hall quant-ph