Threshold current for switching of a perpendicular magnetic layer   induced by spin Hall effect
  We theoretically investigate the switching of a perpendicular magnetic layer by in-plane charge current due to the spin Hall effect. We find that, in the high damping regime, the threshold switching current is independent of the damping constant, and is almost linearly proportional to both effective perpendicular magnetic anisotropy field and external in-plane field applied along the current direction. We obtain an analytic expression of the threshold current, in excellent agreement with numerical results. This expression can be used to determine the physical quantities associated with spin Hall effect, and to design relevant magnetic devices based on the switching of perpendicular magnetic layers. 
Ki-Seung Lee, Seo-Won Lee, Byoung-Chul Min, and Kyung-Jin Lee
cond-mat.mes-hall cond-mat.mtrl-sci