Spin lifetime measurements in GaAsBi thin films
  Photoluminescence spectroscopy and Hanle effect measurements are used to investigate carrier spin dephasing and recombination times in the semiconductor alloy GaAsBi as a function of temperature and excitation energy. Hanle effect measurements reveal the product of g-factor and effective spin dephasing time (gTs) ranges from 0.8 ns at 40 K to 0.1 ns at 120 K. The temperature dependence of gTs provides evidence for a thermally activated effect, which is attributed to hole localization at single Bi or Bi cluster sites below 40 K. 
Brennan Pursley, M. Luengo-Kovac, G. Vardar, R. S. Goldman, and V. Sih
cond-mat.mes-hall cond-mat.mtrl-sci