Impurity impact ionization avalanche in p-type diamond
  Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed technique to reduce thermal effects. Experimental results evidence deep impurity impact ionization avalanche in p-type diamond up to room temperature. 
Vincent Mortet (LAAS, IMO), A. Soltani (IEMN)
cond-mat.mtrl-sci