Characterization of an x-ray hybrid CMOS detector with low interpixel   capacitive crosstalk
  We present the results of x-ray measurements on a hybrid CMOS detector that uses a H2RG ROIC and a unique bonding structure. The silicon absorber array has a 36{\mu}m pixel size, and the readout array has a pitch of 18{\mu}m; but only one readout circuit line is bonded to each 36x36{\mu}m absorber pixel. This unique bonding structure gives the readout an effective pitch of 36{\mu}m. We find the increased pitch between readout bonds significantly reduces the interpixel capacitance of the CMOS detector reported by Bongiorno et al. 2010 and Kenter et al. 2005. 
Christopher V. Griffith, Stephen D. Bongiorno, David N. Burrows,   Abraham D. Falcone, Zachary R. Prieskorn
astro-ph.IM