Characterization of InSb quantum wells with atomic layer deposited gate   dielectrics
  We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance data demonstrate a parallel conduction channel in the sample at zero gate voltage (Vg). A good interface between Al2O3 and the top InSb layer ensures that the parallel channel is depleted at negative Vg and the density of two-dimensional electrons in the QW is tuned by Vg with a large ratio of 6.5x1014 m-2V-1 but saturates at large negative Vg. These findings are closely related to layer structures of the QW as suggested by self-consistent Schrodinger-Poisson simulation and two-carrier model. 
M. M. Uddin, H. W. Liu, K. F. Yang, K. Nagase, T. D. Mishima, M. B.   Santos, and Y. Hirayama
cond-mat.mes-hall cond-mat.mtrl-sci