Tunneling behavior of bismuth telluride nanoplates in electrical   transport
  We study the electrical transport properties of ensembles of bismuth telluride (Bi2Te3) nanoplates grown by solution based chemical synthesis. Devices consisting of Bi2Te3 nanoplates are fabricated by surface treatment after dropping the solution on the structured gold plates and the temperature dependence of resistance shows a nonmetallic behavior. Symmetric tunneling behavior in I-V was observed in both our experimental results and theoretical calculation of surface conductance based on a simple Hamiltonian, which excludes carrier-carrier interactions. Here, we present two devices: one showing symmetric, the other showing a two-step tunneling behavior. The latter can be understood in terms of disorder. 
Mustafa Eginligil, Weiqing Zhang, Alan Kalitsov, Xianmao Lu, and   Hyunsoo Yang
cond-mat.mtrl-sci cond-mat.mes-hall