Anomalous Electron Transport in Field-Effect Transistors with Titanium   Ditelluride Semimetal Thin-Film Channels
  We report on "graphene-like" mechanical exfoliation of thin films of titanium ditelluride and investigation of their electronic properties. The exfoliated crystalline TiTe2 films were used as the channel layers in the back-gated field-effect transistors fabricated with Ti/Al/Au metal contacts on SiO2/Si substrates. The room-temperature current-voltage characteristics revealed strongly non-linear behavior with signatures of the source-drain threshold voltage similar to those observed in the charge-density-wave devices. The drain-current showed an unusual non-monotonic dependence on the gate bias characterized by the presence of multiple peaks. The obtained results can be potentially used for implementation of the non-Boolean logic gates. 
J. Khan, C.M. Nolen, D. Teweldebrhan, D. Wickramaratne, R. K. Lake and   A.A. Balandin
cond-mat.mes-hall cond-mat.mtrl-sci