Suppression of Multilayer Graphene Patches during CVD Graphene growth on   Copper
  By limiting the carbon segregation at the copper surface defects, a pulsed chemical vapor deposition method for single layer graphene growth is shown to inhibit the formation of few-layer regions, leading to a fully single-layered graphene homogeneous at the centimeter scale. Graphene field-effect devices obtained after transfer of pulsed grown graphene on oxidized silicon exhibit mobilities above 5000 cm^2.V^-1.s^-1. 
Zheng Han, Amina Kimouche, Adrien Allain, Hadi Arjmandi-Tash, Antoine   Reserbat-Plantey, S\'ebastien Pairis, Val\'erie Reit...
cond-mat.mes-hall cond-mat.mtrl-sci