Graphene-like metallic-on-silicon field effect transistor
  In this manuscript, we present a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have demonstrated that the two-dimensional electron gas channel is modulated by the gate voltage. The dependence of the drain current on the drain voltage has no saturation region, similar to a field effect transistor based on graphene. However, the transport in this transistor is not ambipolar, as in graphene, but unipolar. 
M. Dragoman, G. Konstantinidis, K. Tsagaraki, T. Kostopoulos, D.   Dragoman, D. Neculoiu
cond-mat.mes-hall