Graphene Bilayer Structures with Superfluid Magnetoexcitons
  We study superfluid behavior of a gas of spatially indirect magnetoexcitons with reference to a system of two graphene layers embedded in a multilayer dielectric structure. The system is considered as an alternative of a double quantum well in a GaAs haterostructure. We determine a range of parameters (interlayer distance, dielectric constant, magnetic field and gate voltage) where magnetoexciton superfluidity can be achieved. Temperature of superfluid transition is computed. A reduction of critical parameters caused by impurities is evaluated and critical impurity concentration is determined. 
A.A. Pikalov, D.V. Fil
cond-mat.mes-hall cond-mat.supr-con