An intrinsic mobility ceiling of Si bulk
  We compute by Density Functional Theory-Non Equilibrium Green Functions Formalism (DFT-NEGFF) the conductance of bulk Si along different crystallographic directions. We find a ceiling value for the intrinsic mobility of bulk silicon of $8.4\cdot10^6 cm^2/V\cdot s$. We suggest that this result is related to the lowest effective mass of the $<001>$ direction. 
Nuria Garcia-Castello, Joan Daniel Prades, and Albert Cirera
cond-mat.mes-hall