Tunable magnetoresistance behavior in suspended graphitic multilayers   through ion implantation
  We report a tunable magnetoresistance (MR) behavior in suspended graphitic multilayers through point defect engineering by ion implantation. We find that ion implantation drastically changes the MR behavior: the linear positive MR in pure graphitic multilayers transforms into a negative MR after introducing significant short-range disorders (implanted boron or carbon atoms), consistent with recent non-Markovian transport theory. Our experiments suggest the important role of the non-Markovian process in the intriguing MR behavior for graphitic systems, and open a new window for understanding transport phenomena beyond the Drude-Boltzmann approach and tailoring the electronic properties of graphitic layers. 
Carlos Diaz-Pinto, Xuemei Wang, Sungbae Lee, Viktor G. Hadjiev,   Debtanu De, Wei-Kan Chu and Haibing Peng
cond-mat.mes-hall