Anomalous enhancement of spin Hall conductivity in superconductor/normal   metal junction
  We propose a spin Hall device to induce a large spin Hall effect in a superconductor/normal metal (SN) junction. The side jump and skew scattering mechanisms are both taken into account to calculate the extrinsic spin Hall conductivity in the normal metal. We find that both contributions are anomalously enhanced when the voltage between the superconductor and the normal metal approaches to the superconducting gap. This enhancement is attributed to the resonant increase of the density of states in the normal metal at the Fermi level. Our results demonstrate a novel way to control and amplify the spin Hall conductivity by applying an external dc electric field, suggesting that a SN junction has a potential application for a spintronic device with a large spin Hall effect. 
S. Hikino and S. Yunoki
cond-mat.supr-con cond-mat.mes-hall