Room temperature ballistic transport in InSb quantum well nanodevices
  We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10$^{6}$ A/cm$^{2}$. This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions. 
A. M. Gilbertson, A. Kormanyos, P. D. Buckle, M. Fearn, T. Ashley, C.   J. Lambert, S. A. Solin, and L. F. Cohen
cond-mat.mes-hall