Time-resolved second harmonic generation study of buried semiconductor   heterointerfaces using soliton-induced transparency
  The transient second harmonic generation and linear optical reflectivity signals measured simultaneously in reflection from GaAs/GaSb/InAs and GaAs/GaSb heterostructures revealed a new mechanism for creating self-induced transparency in narrow bandgap semiconductors at low temperatures, which is based on the dual-frequency electro-optic soliton propagation. This allows the ultrafast carrier dynamics at buried semiconductor heterointerfaces to be studied. 
Y. D. Glinka, N. H. Tolk, J. K. Furdyna
cond-mat.mes-hall