Effect of Electric Field on the Band Structure of Graphene/BN and BN/BN   Bilayers
  Effect of electric field on the band structures of graphene/BN and BN/BN bilayers is investigated within the framework of density functional theory. A relatively large degree of modulation is predicted for the graphene/BN bilayer. The calculated band gap of the graphene/BN bilayer increases with applied electric field, which is not the case of BN/BN bilayer; its band gap decreases with the applied field. Both features in the bilayers considered appear to be related to the nature of the conduction band and the redistribution of the electronic charge of the bilayer systems under the influence of electric field 
Radhakrishnan Balu, Xiaoliang Zhong, Ravindra Pandey, and Shashi P.   Karna
cond-mat.mtrl-sci