Set, Reset, and Retention Times for Ionic and Filamentary Mem-Resistors
  A dynamic systems model has previously been proposed for mem-resistors based on a driven damped harmonic oscillator differential equation describing electron and ionic depletion widths in a thin semiconductor film. This paper derives equations for set, reset, and retention times based on the previously proposed model. Keywords- mem-resistor, RRAM, ReRAM 
Blaise Mouttet
cond-mat.mes-hall