Facile fabrication of lateral nanowire wrap-gate devices with improved   performance
  We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step, and does not require chemical etching. We measure, in the temperature range 1.5-250 K, a subthreshold slope of 5-54 mV/decade and mobility of 2800-2500 $cm^2/Vs$ -- significantly larger than previously reported lateral wrap-gate devices. At depletion, the barrier height due to the gated region is proportional to applied wrap-gate voltage. 
Sajal Dhara, Shamashis Sengupta, Hari S. Solanki, Arvind Maurya,   Arvind Pavan R., M. R. Gokhale, Arnab Bhattacharya, Manda...
cond-mat.mes-hall cond-mat.mtrl-sci