A simple energy loss model and its applications for silicon detectors
  The energy loss of charged particles in silicon can be approximated by a simple analytical model. With help of measured charge deposits in individual channels of hit clusters their position and energy can be estimated. Deposits below threshold and saturated values are treated properly, resulting in a wider dynamic range. The proposed method gives improvements on both hit position and energy residuals. The model is successfully applied to track differential energy loss estimation and to detector gain calibration tasks. 
Ferenc Sikler
physics.data-an hep-ex