Atomistic Simulations of Flash Memory Materials Based on Chalcogenide   Glasses
  In this chapter, by using ab-initio molecular dynamics, we introduce the latest simulation results on two materials for flash memory devices: Ge2Sb2Te5 and Ge-Se-Cu-Ag. This chapter is a review of our previous work including some of our published figures and text in Cai et al. (2010) and Prasai & Drabold (2011) and also includes several new results. 
Bin Cai, Binay Prasai and D. A. Drabold
cond-mat.mtrl-sci cond-mat.dis-nn