Two-dimensional superconductivity induced by high-mobility carrier   doping in LaTiO3/SrTiO3 hetero-structures
  In this letter, we show that a superconducting two-dimensional electron gas is formed at the LaTiO3/SrTiO3 interface whose transition temperature can be modulated by a back-gate voltage. The gas consists of two types of carriers : a majority of low-mobility carriers always present, and a few high-mobility ones that can be injected by electrostatic doping. The calculation of the electrons spatial distribution in the confinement potential shows that the high-mobility electrons responsible for superconductivity set at the edge of the gas whose extension can be tuned by field effect. 
J. Biscaras, N. Bergeal, S. Hurand, C. Grossetete, A. Rastogi, R. C.   Budhani, D. LeBoeuf, C. Proust, J. Lesueur
cond-mat.supr-con