Quasi one-dimensional transport in single GaAs/AlGaAs core-shell   nanowires
  We present an original approach to fabricate single GaAs/AlGaAs core-shell nanowire with robust and reproducible transport properties. The core-shell structure is buried in an insulating GaAs overlayer and connected as grown in a two probe set-up using the highly doped growth substrate and a top diffused contact. The measured conductance shows a non-ohmic behavior with temperature and voltage-bias dependences following power laws, as expected for a quasi-1D system. 
Damien Lucot, Fauzia Jabeen, Jean-Christophe Harmand, Gilles   Patriarche, Romain Giraud, Giancarlo Faini, Dominique Mailly
cond-mat.mtrl-sci cond-mat.mes-hall