Quantum Hall effect on centimeter scale chemical vapor deposited   graphene films
  We report observations of well developed half integer quantum Hall effect (QHE) on mono layer graphene films of 7 mm \times 7 mm in size. The graphene films are grown by chemical vapor deposition (CVD) on copper, then transferred to SiO_{2} /Si substrates, with typical carrier mobilities \approx 4000 cm^{2} /Vs. The large size graphene with excellent quality and electronic homogeneity demonstrated in this work is promising for graphene-based quantum Hall resistance standards, and can also facilitate a wide range of experiments on quantum Hall physics of graphene and practical applications exploiting the exceptional properties of graphene. 
Tian Shen, Wei Wu, Qingkai Yu, Curt A Richter, Randolph Elmquist,   David Newell, and Yong P. Chen
cond-mat.mes-hall