Cross talk by extensive domain wall motion in arrays of ferroelectric   nanocapacitors
  We report on extensive domain wall motion in ferroelectric nanocapacitor arrays investigated by piezoresponse force microscopy. Under a much longer or higher bias voltage pulse, compared to typical switching pulse conditions, domain walls start to propagate into the neighbouring capacitors initiating a significant cross-talk. The propagation paths and the propagated area into the neighbouring capacitors were always the same under repeated runs. The experimental and the simulated results show that the observed cross-talk is related to the capacitor parameters combined with local defects. The results can be helpful to test the reliability of nanoscale ferroelectric memory devices. 
Yunseok Kim, Hee Han, Ionela Vrejoiu, Woo Lee, Dietrich Hesse, and   Marin Alexe
cond-mat.mtrl-sci