Raman sensitivity to crystal structure in InAs nanowires
  We report a combined electron transmission and Raman spectroscopy study of InAs nanowires. We demonstrate that the temperature dependent behavior of optical phonon energies can be used to determine the relative wurtzite fraction in the InAs nanowires. Furthermore, we propose that the interfacial strain between zincblende and wurtzite phases along the length of the wires manifests in the temperature-evolution of the phonon linewidths. From these studies, temperature-dependent Raman measurements emerge has a non-invasive method to study polytypism in such nanowires. 
Jaya Kumar Panda, Anushree Roy, Achintya Singha, Mauro Gemmi, Daniele   Ercolani, Vittorio Pellegrini, Lucia Sorba
cond-mat.mes-hall