Topological Insulator Cell for Memory and Magnetic Sensor Applications
  We propose a memory device based on magnetically doped surfaces of 3D topological insulators. Magnetic information stored on the surface is read out via the quantized Hall effect, which is characterized by a topological invariant. Consequently, the read out process is insensitive to disorder, variations in device geometry, and imperfections in the writing process. 
T. Fujita, M. B. A. Jalil, S. G. Tan
cond-mat.mes-hall