Fast electrochemical doping due to front instability in organic   semiconductors
  The electrochemical doping transformation in organic semiconductor devices is studied in application to light-emitting cells. It is shown that the device performance can be significantly improved by utilizing new fundamental properties of the doping process. We obtain an instability, which distorts the doping fronts and increases the doping rate considerably. We explain the physical mechanism of the instability, develop theory, provide experimental evidence, and perform numerical simulations. We further show how improved device design can amplify the instability thus leading to a much faster doping process and device kinetics. 
V. Bychkov, P. Matyba, V. Akkerman, M. Modestov, D. Valiev, G. Brodin,   C. K. Law, M. Marklund, and L. Edman
cond-mat.mtrl-sci