Small-Signal Capacitance and Current Parameter Modeling in Large-Scale   High-Frequency Graphene Field-Effect Transistors
  The analytical model of the small-signal current and capacitance characteristics of RF graphene FET is presented. The model is based on explicit distributions of chemical potential in graphene channels (including ambipolar conductivity at high source-drain bias) obtained in the framework of drift-diffusion current continuity equation solution. Small-signal transconductance and output conductance characteristics are modeled taking into account the two modes of drain current saturation including drift velocity saturation or electrostatic pinch-off. Analytical closed expression for the complex current gain and the cutoff frequency of high-frequency GFETs are obtained. The model allows describe an impact of parasitic resistances, capacitances, interface traps on extrinsic current gain and cut-off frequency. 
Gennady I. Zebrev, Alexander A. Tselykovskiy, Daria K. Batmanova,   Evgeny V. Melnik
cond-mat.mes-hall