Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for   Charged Particle Tracking
  This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution. 
Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero   Giubilato, Serena Mattiazzo, Devis Pantano, Sarah Zalusky
physics.ins-det