Optimisation and Simulation of an Alternative nano-flash Memory: the   SASEM device
  Process simulation are performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated. 
Christophe Krzeminski (IEMN-ISEN), Emmanuel Dubois (IEMN), Xiaohui   Tang (UCL), Nicolas Reckinger (UCL), Andr\'e Crahay (UC...
cond-mat.mtrl-sci