Thermally driven ballistic rectifer
  The response of electric devices to an applied thermal gradient has, so far, been studied almost exclusively in two-terminal devices. Here we present measurements of the response to a thermal bias of a four-terminal, quasi-ballistic junction with a central scattering site. We find a novel transverse thermovoltage measured across isothermal contacts. Using a multi-terminal scattering model extended to the weakly non-linear voltage regime, we show that the device's response to a thermal bias can be predicted from its nonlinear response to an electric bias. Our approach forms a foundation for the discovery and understanding of advanced, nonlocal, thermoelectric phenomena that in the future may lead to novel thermoelectric device concepts. 
Jason Matthews, David S\'anchez, Marcus Larsson, Heiner Linke
cond-mat.mes-hall