Two-dimensional Transport Induced Linear Magneto-Resistance in   Topological Insulator Bi$_2$Se$_3$ Nanoribbons
  We report the study of a novel linear magneto-resistance (MR) under perpendicular magnetic fields in Bi2Se3 nanoribbons. Through angular dependence magneto-transport experiments, we show that this linear MR is purely due to two-dimensional (2D) transport, in agreement with the recently discovered linear MR from 2D topological surface state in bulk Bi2Te3, and the linear MR of other gapless semiconductors and graphene. We further show that the linear MR of Bi2Se3 nanoribbons persists to room temperature, underscoring the potential of exploiting topological insulator nanomaterials for room temperature magneto-electronic applications. 
Hao Tang, Dong Liang, Richard L.J. Qiu, Xuan P.A. Gao
cond-mat.mes-hall