Compression of nanowires using a flat indenter: Elasticity measurement   in nanoscale
  A new experimental approach for the characterization of the lateral elastic modulus of individual nanowires is demonstrated by implementing a micro/nano scale diametrical compression test geometry, using a flat punch indenter inside of a scanning electron microscope (SEM). A 250 nm diameter single crystal silicon nanowire is tested. Since silicon is highly anisotropic, the compression axis of the wire was determined by electron backscatter diffraction (EBSD). A two dimensional analytical closed-form solution based on a Hertz model is presented. The results of the analytical model are compared with those of finite-element simulations and to the experimental diametral compression results and show good agreement. 
Zhao Wang, W.M. Mook, Ch. Niederberger, R. Ghisleni, L. Philippe, and   J. Michler
cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.other