Comments on "Quasiparticle self-consistent GW theory of III-V nitride   semiconductors: Bands, Gap bowing, and effective masses"
  An oversight of several previous results from local density approximation (LDA) calculations appear to have led to an incomplete, and hence misleading, characterization of the capability of density functional theory (DFT) to describe correctly the electronic properties of wurtzite GaN (w-GaN) and InN (w-InN) [Phys. Rev. B 82, 115102 (2010)]. These comments are aimed at presenting a different picture of the above capability for DFT calculations that solve self-consistently the system of equations of DFT. They also underscore, in light of the experimentally established Burstein-Moss effect, the need to specify the carrier density when citing a band gap for w-InN. 
Diola Bagayoko, Lashounda Franklin, and G. L. Zhao
cond-mat.mtrl-sci cond-mat.other