Silicon spin communication
  Recent experimental breakthroughs have demonstrated that the electron spin in silicon can be reliably injected and detected as well as transferred over distances exceeding 1 mm. We propose an on-chip communication paradigm which is based on modulating spin polarization of a constant current in silicon wires. We provide figures of merit for this scheme by studying spin relaxation and drift-diffusion models in silicon. 
Hanan Dery, Yang Song, Pengke Li, and Igor Zutic
cond-mat.mtrl-sci