Strain control of electron-phonon energy loss rate in many-valley   semiconductors
  We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n + Si, at phonon temperatures between 200 mK and 450 mK, is more than an order of magnitude lower than that for a similar unstrained sample. 
J. T. Muhonen, M. J. Prest, M. Prunnila, D. Gunnarsson, V. A. Shah, A.   Dobbie, M. Myronov, R. J. H. Morris, T. E. Whall, E...
cond-mat.mes-hall