Measurements of Nanoscale Domain Wall Flexing in a Ferromagnetic Thin   Film
  We use the high spatial sensitivity of the anomalous Hall effect in the ferromagnetic semiconductor Ga1-xMnxAs, combined with the magneto-optical Kerr effect, to probe the nanoscale elastic flexing behavior of a single magnetic domain wall in a ferromagnetic thin film. Our technique allows position sensitive characterization of the pinning site density, which we estimate to be around 10^14 cm^{-3}. Analysis of single site depinning events and their temperature dependence yields estimates of pinning site forces (10 pN range) as well as the thermal deactivation energy. Finally, our data hints at a much higher intrinsic domain wall mobility for flexing than previously observed in optically-probed micron scale measurements. 
A. L. Balk, M. E. Nowakowski, M. J. Wilson, D. W. Rench, P. Schiffer,   D. D. Awschalom, N. Samarth
cond-mat.mes-hall