Non-volatile Complementary Resistive Switch-based Content Addressable   Memory
  This paper presents a novel resistive-only Binary and Ternary Content Addressable Memory (B/TCAM) cell that consists of two Complementary Resistive Switches (CRSs). The operation of such a cell relies on a logic$\rightarrow$ON state transition that enables this novel CRS application. 
Omid Kavehei, Said Al-Sarawi, Sharath Sriram, Madhu Bhaskaran,   Kyoung-Rok Cho, Kamran Eshraghian, and Derek Abbott
cond-mat.mtrl-sci cs.ET