Graphene Field Effect Transistors: Diffusion-Drift Theory
  Based on explicit solution of current continuity equation in the graphene FET's channel the semi-classical diffusion-drift description of the carrier transport and I-V characteristics model has been developed. Role of rechargeable defects (interface traps) near or at the interface between graphene and insulated layers has also described. 
Gennady I. Zebrev
cond-mat.mes-hall