Spin-pumping-induced spin transport in p-type Si at room temperature
  A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni80Fe20 results in spin accumulation at the Ni80Fe20/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature. 
Eiji Shikoh, Kazuya Ando, Eiji Saito, Kazuki Kubo, Teruya Shinjo and   Masashi Shiraishi (Osaka Univ. & Tohoku Univ., Japan)
cond-mat.mtrl-sci