Radio frequency readout of electrically detected magnetic resonance in   phosphorus-doped silicon MOSFETs
  We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus-doped silicon metal-oxide field-effecttransistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P hyperfine lines have been observed using radio frequency reflectometry, which is promising for high-bandwidth operation and possibly time-resolved detection of spin resonance in donor-based semiconductor devices. Here we present the effect of microwave (MW) power and MOSFET biasing conditions on the EDMR signals. 
Laurens H. Willems van Beveren, Hans Huebl, Andrea Morello
cond-mat.mes-hall cond-mat.mtrl-sci