Electrical spin injection and transport in Germanium
  We report the first experimental demonstration of electrical spin injection, transport and detection in bulk germanium (Ge). The non-local magnetoresistance in n-type Ge is observable up to 225K. Our results indicate that the spin relaxation rate in the n-type Ge is closely related to the momentum scattering rate, which is consistent with the predicted Elliot-Yafet spin relaxation mechanism for Ge. The bias dependence of the nonlocal magnetoresistance and the spin lifetime in n-type Ge is also investigated. 
Yi Zhou, Wei Han, Li-Te Chang, Faxian Xiu, Minsheng Wang, Michael   Oehme, Inga A. Fischer, Joerg Schulze, Roland. K. Kawaka...
cond-mat.mes-hall