Dopant metrology in advanced FinFETs
  Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. This paper describes how, through correlation of experimental data with multimillion atom tight-binding simulations using the NEMO 3-D code, it is possible to identify the impurity's chemical species and determine their concentration, local electric field and depth below the Si/SiO$_{\mathrm{2}}$ interface. The ability to model the excited states rather than just the ground state is the critical component of the analysis and allows the demonstration of a new approach to atomistic impurity metrology. 
G. P. Lansbergen, R. Rahman, G.C. Tettamanzi, J. Verduijn, L. C. L.   Hollenberg, G. Klimeck and S. Rogge
cond-mat.mes-hall