Monte-Carlo Simulations of Electron Channelling: a Bent (110) Channel in   Silicon
  Results obtained with a new Monte-Carlo code ChaS for channeling of 855 MeV electrons along the crystallographic plane (110) in a bent silicon crystal are presented. The dependence of the dechanneling length and the asymptotic acceptance of the channel on the crystal bending is studied. 
Andriy Kostyuk
physics.acc-ph