Complementary-like Graphene Logic Gates Controlled by Electrostatic   Doping
  Realization of logic circuits from graphene is very attractive for high-speed nanoelectronics. However, the intrinsic ambipolar nature hinders the formation of graphene logic devices with the conventional complementary architecture. Using electrostatic doping modulation, we show here a facile method to control the charge neutrality points and form a complementary-like structure, in which the ambipolar conduction is used as a benefit rather than a drawback to construct logic devices. A band gap is also introduced in the channels to improve the switching ratio of the graphene transistors. For the first time, complementary-like NOR and NAND logic gates were demonstrated. This method provides a possible route for logic circuits from ambipolar graphene and, in principle, can be also extended to other ambipolar semiconductors, such as organic compounds and carbon nanotube thin films. 
Song-Lin Li, Hisao Miyazaki, Michael V. Lee, Chuan Liu, Akinobu Kanda,   Kazuhito Tsukagoshi
cond-mat.mes-hall cond-mat.mtrl-sci