Incommensurate Antiferromagnetic Insulating State in   (MDT-TS)(AuI$_2$)$_{x}$
  We theoretically study the metal-insulator transition in a molecular conductor (MDT-TS)(AuI$_2$)$_{x}$ composed with an incommensurate ratio ($x = 0.441$), where the conduction band originated from the HOMO of donor MDT-TS molecules is incommensurately filled. We consider a two-dimensional Hubbard model taking account of anisotropic transfer integrals in the donor layer, under a periodic potential due to the anions (AuI$_2$)$^-$ which mismatches the donor lattice period, and investigate the ground state within mean-field approximation. An antiferromagnetic insulating state with induced charge disproportionation is obtained in the large $U$ region; this corresponds to the incommensurate Mott insulating state predicted previously [H. Yoshioka {\it et al.}: \jo{\JPSJ}{74}{2005}{1922}] based on a simplified one-dimensional model. 
Hideo Yoshioka, Hitoshi Seo, and Yuichi Otsuka
cond-mat.str-el