Characterization and Predictive Modeling of Epitaxial Silicon-Germanium   Thermistor Layers
  The thermal coefficient of resistance (TCR) for epitaxial silicon-germanium (SiGe) layers has been analyzed by experiment and simulation. Predictive simulation using drift-diffusion formalism and self-consistent quantum-mechanical solutions yielded similar results, TCR around 2%/K at 300 K. This modeling approach can be used for different, graded and constant, SiGe profiles,. It is also capable of predicting the influence of background auto-doping on the TCR of the detectors 
B. Gunnar Malm, Mohammadreza Kolahdouz, Fredrik Forsberg, Frank   Niklaus
cond-mat.mtrl-sci cond-mat.mes-hall quant-ph