Strain enhanced electron cooling in a degenerately doped semiconductor
  Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK to 258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate. 
M. J. Prest, J. T. Muhonen, M. Prunnila, D. Gunnarsson, V. A. Shah, J.   S. Richardson-Bullock, A. Dobbie, M. Myronov, R. J....
cond-mat.mes-hall