Development of Active Pixel Photodiode Sensors for Gamma Camera   Application
  We designed new photodiodes sensors including current mirror amplifiers. These photodiodes have been fabricated using a CMOS 0.6 micrometers process from Austria Micro System (AMS). The Photodiode areas are respectiveley 1mm x 1mm and 0.4mm x 0.4mm with fill factor 98 % and total chip area is 2 square millimetres. The sensor pixels show a logarithmic response in illumination and are capable of detecting very low blue light (less than 0.5 lux) . These results allow to use our sensor in new Gamma Camera solid-state concept. 
Nur Sultan Salahuddin (1,2), Michel Paindavoine (1), Brahmantyo   Heruseto (2), Michel Parmentier (3) ((1) University of Bur...
cs.OH