Giant Spin-Hall Effect induced by Zeeman Interaction in Graphene
  We propose a new approach to generate and detect spin currents in graphene, based on a large spin-Hall response arising near the neutrality point in the presence of external magnetic field. Spin currents result from the imbalance of the Hall resistivity for the spin-up and spin-down carriers induced by Zeeman interaction, and do not involve spin-orbit interaction. Large values of the spin-Hall response achievable in moderate magnetic fields produced by on-chip sources, and up to room temperature, make the effect viable for spintronics applications. 
D. A. Abanin, R. V. Gorbachev, K. S. Novoselov, A. K. Geim, L. S.   Levitov
cond-mat.mes-hall