New Transformative Possibilities for Ovonic Devices
  The Ovonic Phase Change Memory is critical in the quest to meet the increasing commercial needs for new information systems. The important paper of DerChang Kau et al. [1], describing a stackable cross point phase change memory, resulting in a three dimensional device which includes the Ovonic Threshold Switch, therefore permits a significant expansion of our field. I will propose and show that our basic science allows for other transformative changes that combine both threshold and phase change mechanisms in a single device. The mechanisms that I will describe have already been proven. My aim is to provide the understanding of these mechanisms so that new devices based on them can become important components that illustrate the great potential of our field. I know of no better place to give this kind of talk than Italy where I have had some of my happiest memories of working together with Roberto Bez and his wonderful colleagues and collaborators. 
Stanford R. Ovshinsky
physics.gen-ph