Role of the van Hove Singularity in the Quantum Criticality of the   Hubbard Model
  A quantum critical point (QCP), separating the non-Fermi liquid region from the Fermi liquid, exists in the phase diagram of the 2D Hubbard model [Vidhyadhiraja et. al, Phys. Rev. Lett. 102, 206407 (2009)]. Due to the vanishing of the critical temperature associated with a phase separation transition, the QCP is characterized by a vanishing quasiparticle weight. Near the QCP, the pairing is enhanced since the real part of the bare d-wave p-p susceptibility exhibits algebraic divergence with decreasing temperature, replacing the logarithmic divergence found in a Fermi liquid [Yang et. al, Phys. Rev. Lett. 106, 047004 (2011)]. In this paper we explore the single-particle and transport properties near the QCP. We focus mainly on a van Hove singularity (vHS) coming from the relatively flat dispersion that crosses the Fermi level near the quantum critical filling. The flat part of the dispersion orthogonal to the antinodal direction remains pinned near the Fermi level for a range of doping that increases when we include a negative next-near-neighbor hopping t' in the model. For comparison, we calculate the bare d-wave pairing susceptibility for non-interacting models with the usual two-dimensional tight binding dispersion and a hypothetical quartic dispersion. We find that neither model yields a vHS that completely describes the critical algebraic behavior of the bare d-wave pairing susceptibility. The resistivity, thermal conductivity, thermopower, and the Wiedemann-Franz Law are examined in the Fermi liquid, marginal Fermi liquid, and pseudo-gap doping regions. A negative next-near-neighbor hopping t' increases the doping region with marginal Fermi liquid character. Both T and negative t' are relevant variables for the QCP, and both the transport and the motion of the vHS with filling suggest that they are qualitatively similar in their effect. 
K.-S. Chen, S. Pathak, S.-X. Yang, S.-Q. Su, D. Galanakis, K.   Mikelsons, M. Jarrell and J. Moreno
cond-mat.str-el