Vertical Graphene Base Transistor
  We present a novel, graphene-based device concept for high-frequency operation: a hot electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows THz operation. Based on energy band considerations we propose a specific materials solution that is compatible with SiGe process lines. 
Wolfgang Mehr, J. Christoph Scheytt, Jarek Dabrowski, Gunther Lippert,   Ya-Hong Xie, Max C. Lemme, Mikael Ostling, Grzegorz...
cond-mat.mes-hall cond-mat.mtrl-sci