Rigorous Simulations of 3D Patterns on Extreme Ultraviolet Lithography   Masks
  Simulations of light scattering off an extreme ultraviolet lithography mask with a 2D-periodic absorber pattern are presented. In a detailed convergence study it is shown that accurate results can be attained for relatively large 3D computational domains and in the presence of sidewall-angles and corner-roundings. 
S. Burger, L. Zschiedrich, J. Pomplun, F. Schmidt
physics.optics physics.comp-ph