Investigation of 3D Patterns on EUV Masks by Means of Scatterometry and   Comparison to Numerical Simulations
  EUV scatterometry is performed on 3D patterns on EUV lithography masks. Numerical simulations of the experimental setup are performed using a rigorous Maxwell solver. Mask geometry is determined by minimizing the difference between experimental results and numerical results for varied geometrical input parameters for the simulations. 
S. Burger, L. Zschiedrich, J. Pomplun, F. Schmidt, A. Kato, C. Laubis,   F. Scholze
physics.optics physics.comp-ph