CuMn-V compounds: a transition from semimetal low-temperature to   semiconductor high-temperature antiferromagnets
  We report on a theoretical and experimental study of CuMn-V antiferromagnets. Previous works showed low-temperature antiferomagnetism and semimetal electronic structure of the semi-Heusler CuMnSb. In this paper we present theoretical predictions of high-temperature antiferromagnetism in the stable orthorhombic phases of CuMnAs and CuMnP. The electronic structure of CuMnAs is at the transition from a semimetal to a semiconductor and we predict that CuMnP is a semiconductor. We show that the transition to a semiconductor-like band structure upon introducing the lighter group-V elements is present in both the metastable semi-Heusler and the stable orthorhombic crystal structures. On the other hand, the orthorhombic phase is crucial for the high N\'eel temperature. Results of X-ray diffraction, magnetization, transport, and neutron diffraction measurements we performed on chemically synthesized CuMnAs are consistent with the theory predictions. 
F. Maca, J. Masek, O. Stelmakhovych, X. Marti, K. Uhlirova, P. Beran,   H. Reichlova, P. Wadley, V. Novak, and T. Jungwirth
cond-mat.mtrl-sci