Theory of the ultrafast mode-locked GaN lasers in a large-signal regime
  Analytical theory of the high-power passively mode-locked laser with a slow absorber is developed. In distinguishing from previous treatment, our model is valid at pulse energies well exceeding the saturation energy of absorber. This is achieved by solving the mode-locking master equation in the pulse energy-domain representation. The performances of monolithic sub-picosecond blue-violet GaN mode-locked diode laser in the high-power operation regime are analyzed using the developed approach. 
Igor V. Smetanin, Peter P. Vasil'ev, and Dmitri L. Boiko
physics.optics math-ph math.MP quant-ph