Single-photon emission from the natural quantum dots in the InAs/GaAs   wetting layer
  Time-resolved microphotoluminescence study is presented for quantum dots which are formed in the InAs/GaAs wetting layer. These dots are due to fluctuations of In composition in the wetting layer. They show spectrally sharp luminescence lines with a low spatial density. We identify lines related to neutral exciton and biexciton as well as trions. Exciton emission antibunching (second order correlation value of g^2(0)=0.16) and biexciton-exciton emission cascade prove non-classical emission from the dots and confirm their potential as single photon sources. 
T. Kazimierczuk and A. Golnik and P. Kossacki and J. Gaj and Z.   Wasilewski and A. Babinski
cond-mat.mes-hall