Correlation induced switching of local spatial charge distribution in   two-level system
  We present theoretical investigation of spatial charge distribution in the two-level system with strong Coulomb correlations by means of Heisenberg equations analysis for localized states total electron filling numbers taking into account pair correlations of local electron density. It was found that tunneling current through nanometer scale structure with strongly coupled localized states causes Coulomb correlations induced spatial redistribution of localized charges. Conditions for inverse occupation of two-level system in particular range of applied bias caused by Coulomb correlations have been revealed. We also discuss possibility of charge manipulation in the proposed system. 
P.I. Arseyev, N.S. Maslova, V.N. Mantsevich
cond-mat.mes-hall