The effect of p-type doping on the oxidation of H-Si(111) studied by   second-harmonic generation
  Atomic force microscopy and second-harmonic generation data show that boron doping enhances the rate of oxidation of H-terminated silicon. Holes cause a greater increase in the reactivity of the Si-H up bonds than that of the Si-Si back bonds. 
Bilal Gokce, Daniel B. Dougherty, and Kenan Gundogdu
cond-mat.mtrl-sci physics.chem-ph physics.optics