Fabrication and Room-Temperature Single-Charging Behavior of   Self-Aligned Single-Dot Memory Devices
  Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory circuit, this paper investigates process repeatability, device uniformity in single-dot memory arrays, device scalability, and process transferability to an industrial application. 
Xiaohui Tang, Nicolas Reckinger, Vincent Bayot, Christophe Krzeminski,   Emmanuel Dubois, Alexandre Villaret, Daniel Bensahel
cond-mat.mtrl-sci quant-ph