Observation of interface carrier states in no-common-atom   heterostructures ZnSe/BeTe
  Existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is evidenced experimentally by ellipsometry and photoluminescence spectroscopy. These states are located on interfaces and lie inside the effective band gap of the structure; they are characterized by a high density and high carrier capture rate. A tight binding model confirms theoretically the existence of these states in ZnSe/BeTe heterostructures for a ZnTe-type interface, in contrast to the case of the BeSe-type interface for which they do not exist. 
A.S. Gurevich, V.P. Kochereshko, J. Bleuse, H. Mariette, A. Waag, and   R. Akimoto
cond-mat.mes-hall