Bilayer graphene dual-gate nanodevice: An ab initio simulation
  We study the electronic transport properties of a dual-gated bilayer graphene nanodevice via first principles calculations. We investigate the electric current as a function of gate length and temperature. Under the action of an external electrical field we show that even for gate lengths up 100 Ang., a non zero current is exhibited. The results can be explained by the presence of a tunneling regime due the remanescent states in the gap. We also discuss the conditions to reach the charge neutrality point in a system free of defects and extrinsic carrier doping. 
J. E. Padilha, Matheus P. Lima, A. J. R. da Silva and A. Fazzio
cond-mat.mes-hall