Magnetotransport Properties of Quasi-Free Standing Epitaxial Graphene   Bilayer on SiC: Evidence for Bernal Stacking
  We investigate the magnetotransport properties of quasi-free standing epitaxial graphene bilayer on SiC, grown by atmospheric pressure graphitization in Ar, followed by H$_2$ intercalation. At the charge neutrality point the longitudinal resistance shows an insulating behavior, which follows a temperature dependence consistent with variable range hopping transport in a gapped state. In a perpendicular magnetic field, we observe quantum Hall states (QHSs) both at filling factors ($\nu$) multiple of four ($\nu=4, 8, 12$), as well as broken valley symmetry QHSs at $\nu=0$ and $\nu=6$. These results unambiguously show that the quasi-free standing graphene bilayer grown on the Si-face of SiC exhibits Bernal stacking. 
Kayoung Lee, Seyoung Kim, M. S. Points, T. E. Beechem, Taisuke Ohta,   E. Tutuc
cond-mat.mes-hall cond-mat.mtrl-sci