The influence of spin-flip scattering on the preparation and detection   of a single spin state in a quantum dot attached to a spin battery
  Recently, the possibility of an all electrical scheme of preparation and readout for a single spin state in a single quantum dot attached to spin biased leads has been shown [F. Chi et al., Phys. Rev. B 81, 075310 (2010)]. However, spin scattering mechanisms have been omitted. To remedy this lack we consider the influence of the spin-flip scattering process on the proposed preparation and readout scheme. 
Piotr Trocha
cond-mat.mes-hall