Tunable thermal conductivity in defect engineered nanowires at low   temperatures
  We measure the thermal conductivity ($\kappa$) of individual InAs nanowires (NWs), and find that it is 3 orders of magnitude smaller than the bulk value in the temperature range of 10 to 50 K. We argue that the low $\kappa$ arises from the strong localization of phonons in the random superlattice of twin-defects oriented perpendicular to the axis of the NW. We observe significant electronic contribution arising from the surface accumulation layer which gives rise to tunability of $\kappa$ with the application of electrostatic gate and magnetic field. Our devices and measurements of $\kappa$ at different carrier concentrations and magnetic field without introducing structural defects, offer a means to study new aspects of nanoscale thermal transport. 
Sajal Dhara, Hari S. Solanki, Arvind Pawan R., Vibhor Singh, Shamashis   Sengupta, B.A. Chalke, Abhishek Dhar, Mahesh Gokhal...
cond-mat.mes-hall cond-mat.mtrl-sci