Using Capacitance Methods for Interface Trap Level Density Extraction in   Graphene Field-Effect Devices
  Methods of extraction of interface trap level density in graphene field-effect devices from the capacitance-voltage measurements are described and discussed. Interrelation with the graphene Fermi velocity extraction is shown. Similarities and differences in interface trap extraction procedure in graphene and silicon field-effect structures are briefly discussed. 
Gennady I. Zebrev, Evgeny V. Melnik, Daria K. Batmanova
cond-mat.mes-hall