Interaction correction to the conductivity of two-dimensional electron   gas in In$_x$Ga$_{1-x}$As/InP quantum well structure with strong spin-orbit   coupling
  The electron-electron interaction quantum correction to the conductivity of the gated single quantum well InP/In$_{0.53}$Ga$_{0.47}$As heterostructures is investigated experimentally. The analysis of the temperature and magnetic field dependences of the conductivity tensor allows us to obtain reliably the diffusion part of the interaction correction for different values of spin relaxation rate, $1/\tau_s$. The surprising result is that the spin relaxation processes do not suppress the interaction correction in the triplet channel and, thus, do not enhance the correction in magnitude contrary to theoretical expectations even in the case of relatively fast spin relaxation, $1/T\tau_s\simeq (20-25)\gg 1$. 
G. M. Minkov, A. V. Germanenko, O. E. Rut, A. A. Sherstobitov
cond-mat.str-el cond-mat.dis-nn