Interplay between electron-phonon couplings and disorder strength on the   transport properties of organic semiconductors
  The combined effect of bulk and interface electron-phonon couplings on the transport properties is investigated in a model for organic semiconductors gated with polarizable dielectrics. While the bulk electron-phonon interaction affects the behavior of mobility in the coherent regime below room temperature, the interface coupling is dominant for the activated high $T$ contribution of localized polarons. In order to improve the description of the transport properties, the presence of disorder is needed in addition to electron-phonon couplings. The effects of a weak disorder largely enhance the activation energies of mobility and induce the small polaron formation at lower values of electron-phonon couplings in the experimentally relevant window $150 K<T<300 K$. The results are discussed in connection with experimental data of rubrene organic field-effect transistors. 
C. A. Perroni and V. Cataudella
cond-mat.str-el cond-mat.mtrl-sci cond-mat.soft