Martensite structures and twinning in substrate-constrained epitaxial   Ni-Mn-Ga films deposited by a magnetron co-sputtering process
  In order to obtain Ni-Mn-Ga epitaxial films crystallized in martensite structures showing Magnetic-Induced Rearrangement (MIR) of martensite variants, a fine control of the composition is required. Here we present how the co-sputtering process might be helpful in the development of Ni-Mn-Ga epitaxial films. A batch of epitaxial Ni-Mn-Ga films deposited by co-sputtering of a Ni-Mn-Ga ternary target and a pure manganese target has been studied. The co-sputtering process allows a precise control of the film compositions and enables keeping the epitaxial growth of Ni-Mn-Ga austenite during deposition at high temperature. It gives rise to tune the content of the MIR-active 14-modulated martensite in the film at room temperature, as well as micro and macro-twinned domains sizes. 
J\'er\'emy Tillier (NEEL, CRETA), Daniel Bourgault (NEEL, CRETA),   S\'ebastien Pairis (NEEL), Luc Ortega (NEEL), Nathalie C...
cond-mat.mtrl-sci