Identification of main contributions to conductivity of epitaxial InN
  Complex effect of different contributions (spontaneously formed In nanoparticles, near-interface, surface and bulk layers) on electrophysical properties of InN epitaxial films is studied. Transport parameters of the surface layer are determined from the Shubnikov-de Haas oscillations measured in undoped and Mg-doped InN films at magnetic fields up to 63 T. It is shown that the In nanoparticles, near-interface and bulk layers play the dominant role in the electrical conductivity of InN, while influence of the surface layer is pronounced only in the compensated low-mobility InN:Mg films. 
T.A. Komissarova, O. Drachenko, V.N. Jmerik, X. Wang, A. Yoshikawa,   and S.V. Ivanov
cond-mat.mtrl-sci