Tensile-Strained Germanium-on-Insulator Substrate Fabrication for   Silicon-Compatible Optoelectronics
  We present a method to fabricate tensile-strained germanium-on-insulator (GOI) substrates using heteroepitaxy and layer transfer techniques. The motivation is to obtain a high-quality wafer-scale GOI platform suitable for silicon-compatible optoelectronic device fabrication. Crystal quality is assessed using X-Ray Diffraction (XRD) and Transmission Electron Microscopy. A biaxial tensile film strain of 0.16% is verified by XRD. Suitability for device manufacturing is demonstrated through fabrication and characterization of metal-semiconductor-metal photodetectors that exhibit photoresponse beyond 1.55 {\mu}m. The substrate fabrication process is compatible with complementary metal-oxide-semiconductor manufacturing and represents a potential route to wafer-scale integration of silicon-compatible optoelectronics. 
J. Raja Jain, Dany-Sebastien Ly-Gagnon, Krishna C. Balram, Justin S.   White, Mark L. Brongersma, David A. B. Miller, and Ro...
physics.optics