Spontaneous Emission and Ultrafast Carrier Relaxation in InGaN Quantum   Well with Metal Nanoparticles
  Subpicosecond wavelength non-degenerate differential transmission (DT) was used to observe the carrier relaxation mechanism in GaN based quantum well (QW) with and without metal nanoparticles (MNPs) in it. The spontaneous emission dominates the stimulated emission for above the GaN band edge excitation energy. We observed long decay times for Au-embedded sample and short decay times for Ag-embedded sample with respect to reference sample. 
Meg Mahat and Arup Neogi (Department of Physics, University of North   Texas)
cond-mat.mes-hall cond-mat.other