Physics-Based Compact Modeling of Double-Gate Graphene Field-Effect   Transistor Operation Including Description of Two Saturation Modes
  Based on diffusion-drift approximation a version of analytic compact model for large-area double-gate graphene field-effect transistor is presented. As parts of the model, the electrostatics of double-gate structure is described and a unified phenomenological approach for modeling of the two drain current saturation modes is proposed. 
Gennady I. Zebrev, Alexander A. Tselykovskiy, Valentin O. Turin
cond-mat.mes-hall