Bias current dependence of spin accumulation signals in a silicon   channel detected by a Schottky tunnel contact
  We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si channel and a high-quality Schottky tunnel contact. In a low current-bias region, the Hanle-effect curves are observed only under forward bias conditions. This can be considered that the electrical detectability of the forward-biased contact is higher than that of the reverse-biased contact. This is possible evidence for the detection of spin-polarized electrons created in a Si channel. 
Y. Ando, K. Kasahara, K. Yamane, Y. Baba, Y. Maeda, Y. Hoshi, K.   Sawano, M. Miyao, and K. Hamaya
cond-mat.mtrl-sci cond-mat.mes-hall