Modified Mott-Schottky Analysis of Nanocrystal Solar Cells
  Mott-Schottky analysis is adapted to determine the built-in bias (Vbi) and doping density (N) of lead sulfide-zinc oxide colloidal quantum dot heterojunction solar cells. We show that charge injection barriers at the solar cell's electrodes create a constant capacitance that distorts the junction's depletion capacitance and result in erroneous Vbi and N values when determined through Mott-Schottky analysis. The injection barrier capacitance is taken into account by incorporating a constant capacitance in parallel with the depletion capacitance. 
Shawn M. Willis, Cheng Cheng, Hazel E. Assender and Andrew A. R. Watt
cond-mat.mtrl-sci