Silicon-CMOS Compatible In-Situ CCVD Grown Graphene Transistors with   Ultra-High On/Off-Current Ratio
  By means of catalytic chemical vapor deposition (CCVD) in-situ grown monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate without the need to transfer graphene layers. In-situ grown MoLGFETs exhibit the expected Dirac point together with the typical low on/off-current ratios. In contrast, BiLGFETs possess unipolar p-type device characteristics with an extremely high on/off-current ratio up to 1E7. The complete fabrication process is silicon CMOS compatible. This will allow a simple and low-cost integration of graphene devices for nanoelectronic applications in a hybrid silicon CMOS environment. 
Pia Juliane Wessely, Frank Wessely, Emrah Birinci, Karsten Beckmann,   Bernadette Riedinger, Udo Schwalke
cond-mat.mes-hall