Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
  We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double dot in the two electron configuration, a critical step in performing coherent spin manipulations in Si. 
Matthew G. Borselli, Kevin Eng, Edward T. Croke, Brett M. Maune, Biqin   Huang, Richard S. Ross, Andrey A. Kiselev, Peter W....
cond-mat.mes-hall