Some features of the transport processes of ion-implanted boron under   conditions of transient enhanced diffusion suppression
  It has been shown that during thermal treatments of silicon layers preamorphized by germanium implantation and then implanted with boron ions the transport of impurity atoms occurs right up to a temperature of 850^{\circ}C due to migration of the nonequilibrium boron interstitials. 
O.I. Velichko, A.A. Hundorina, V.V. Axenov
cond-mat.mtrl-sci