Modified exponential I(U) dependence and optical efficiency of AlGaAs   SCH lasers in computer modeling with Synopsys TCAD
  Optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures are modeled by using Synopsys's Sentaurus TCAD, and open source software. We propose a modified exponential $I-V$ dependence to describe electrical properties. A simple analytical, phenomenological model is found to describe optical efficiency, $\eta$, with a high accuracy, by using two parameters only. A link is shown between differential electrical resistivity $r=dU/dI$ just above the lasing offset voltage, and the functional $\eta(U)$ dependence. 
Zbigniew Koziol, and Sergey I. Matyukhin
cond-mat.mtrl-sci