Silicon intercalation into the graphene-SiC interface
  In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000[`1]) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020. In a sequence of depositions, we have been able to intercalate ~ 6 ML of Si into the graphene-SiC interface. 
F. Wang, K. Shepperd, J. Hicks, M.S. Nevius, H. Tinkey, A. Tejeda, A.   Taleb-Ibrahimi, F. Bertran, P. Le F`evre, D. B. Torr...
cond-mat.mes-hall