Superlattices of Bi2Se3/In2Se3: Growth Characteristics and Structural   Properties
  Superlattices (SLs) consisted of alternating Bi2Se3 and In2Se3 layers are grown on Si(111) by molecular-beam epitaxy. Bi2Se3, a three-dimensional topological insulator (TI), showed good chemical and structural compatibility with In2Se3, a normal band insulator with large energy bandgap. The individual layers in the SLs are very uniform and the hetero-interfaces are sharp. Therefore, such SL structures are potential candidates for explorations of the quantum size effects of TIs. 
Z. Y. Wang, X. Guo, H. D. Li, T. L. Wong, N. Wang, M. H. Xie
cond-mat.mes-hall cond-mat.mtrl-sci