Diffusion thermopower of (Ga,Mn)As/GaAs tunnel junctions
  We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy derivative of the density of states in the magnetic material, and thus has a strongly anisotropic response to the direction of magnetization in the material. The effect will have relevance to the operation of semiconductor spintronic devices, and may indeed already play a role in correctly interpreting the details of some earlier spin injection studies. 
Ts. Naydenova, P. D\"urrenfeld, K. Tavakoli, N. Pegard, L. Ebel, K.   Pappert, K. Brunner, C. Gould, L.W. Molenkamp
cond-mat.mes-hall