Characterisation of a Thin Fully-Depleted SOI Pixel Sensor with Soft   X-ray Radiation
  This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer contact is implanted on the back-plane. The response to X-rays from 2.12 up to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source. 
Marco Battaglia, Dario Bisello, Richard Celestre, Devis Contarato,   Peter Denes, Serena Mattiazzo and Craig Tindall
physics.ins-det