Quantum Mott transition in a silicon quantum dot
  Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide, we derive simple conditions for the conductance of the dot to become a step-like function of the number of doping atoms inside the dot, with negligible dependence on the actual position of the dopants. The found conditions are feasible in experimentally available structures. 
S. V. Vyshenski, U. Zeitler, and R. J. Haug