Lateral photocurrent spreading in single quantum well infrared   photodetectors
  Lateral physical effects in single quantum well infrared photodetectors (SQWIPs) under non-uniform illumination over detector area are considered. These effects are due mainly to the in-plane transport of the photoinduced charge in the QW. The length of the lateral photocurrent spreading is determined by the in-plane conductivity of the carriers in the QW and characteristic time of the QW recharging, and can be as large as 10-10000 mkm. Closed-form analytical expressions for SQWIP responsivity for modulated infrared signal and modulation transfer function are obtained. Possible techniques to suppress lateral photocurrent spreading are discussed. 
Maxim Ershov