Suppression of hole-hole scattering in GaAs/AlGaAs heterostructures   under uniaxial compression
  Resistance, magnetoresistance and their temperature dependencies have been investigated in the 2D hole gas at a [001] p-GaAs/Al$_{0.5}$Ga$_{0.5}$As heterointerface under [110] uniaxial compression. Analysis performed in the frame of hole-hole scattering between carriers in the two spin splitted subbands of the ground heavy hole state indicates, that h-h scattering is strongly suppressed by uniaxial compression. The decay time $\tau_{01}$ of the relative momentum reveals 4.5 times increase at a uniaxial compression of 1.3 kbar. 
V.Kravchenko(1), N.Minina(1), A.Savin(1), C.B.Sorensen(2),   O.P.Hansen(2), W.Kraak(3) ((1)Physics Faculty, Moscow State Uni...