Quantum Langevin equations for semiconductor light-emitting devices and   the photon statistics at a low-injection level
  From the microscopic quantum Langevin equations (QLEs) we derive the effective semiconductor QLEs and the associated noise correlations which are valid at a low-injection level and in real devices. Applying the semiconductor QLEs to semiconductor light-emitting devices (LEDs), we obtain a new formula for the Fano factor of photons which gives the photon-number statistics as a function of the pump statistics and several parameters of LEDs. Key ingredients are non-radiative processes, carrier-number dependence of the radiative and non-radiative lifetimes, and multimodeness of LEDs. The formula is applicable to the actual cases where the quantum efficiency $\eta$ differs from the differential quantum efficiency $\eta_{d}$, whereas previous theories implicitly assumed $\eta = \eta_{d}$. It is also applicable to the cases when photons in each mode of the cavity are emitted and/or detected inhomogeneously. When $\eta_{d} < \eta$ at a running point, in particular, our formula predicts that even a Poissonian pump can produce sub-Poissonian light. This mechanism for generation of sub-Poissonian light is completely different from those of previous theories, which assumed sub-Poissonian statistics for the current injected into the active layers of LEDs. Our results agree with recent experiments. We also discuss frequency dependence of the photon statistics. 
Hiroshi Fujisaki and Akira Shimizu