Theory of the field-effect mobility in amorphous organic transistors
  The field-effect mobility in an organic thin-film transistor is studied theoretically. From a percolation model of hopping between localized states and a transistor model an analytic expression for the field-effect mobility is obtained. The theory is applied to describe the experiments by Brown et al. [Synth. Met. 88, 37 (1997)] on solution-processed amorphous organic transistors, made from a polymer (polythienylene vinylene) and from a small molecule (pentacene). Good agreement is obtained, both with respect to the gate-voltage and the temperature dependence of the mobility. 
M. C. J. M. Vissenberg (1 and 2) and M. Matters (1) ((1) Philips   Research Laboratories and (2) University of Leiden)