Polarons in Wurtzite Nitride Semiconductors
  Polaron binding energy and effective mass are calculated for semiconductors with wurtzite crystalline structure from the first order electron-phonon corrections to the self-energy. A recently introduced Frohlich-like electron-phonon interaction Hamiltonian which accounts for the LO and TO polarizations mixing due to the anisotropy is used in the calculation. The polaronic damping rates are evaluated for finite temperature. Numerical results are reported for GaN. It is shown that the electron-phonon coupling is strong enough to justify the necessity of the inclusion of second-order corrections. 
M. E. Mora-Ramos, F. J. Rodriguez and L. Quiroga (U. de los Andes,   COLOMBIA)