Self-shunted Al/AlOx/Al Josephson junctions
  Self-shunted aluminum Josephson junctions with high-transparency barriers were fabricated using the shadow-evaporation technique and measured at low temperatures, T=25 mK. Due to high junction transparency, the IV-characteristics were found to be of only small hysteresis with retrapping-to-switching current ratio of up to 80%. The observed critical currents were close to the Ambegaokar-Baratoff values (up to 80-100%). Good barrier quality was confirmed by the low subgap leakage currents in the quasiparticle branches, which makes the self-shunted Al junctions promising for application in integrated RSFQ-qubit circuitry. 
S.V.Lotkhov, E.M.Tolkacheva, D.V.Balashov, M.I.Khabipov,   F.-I.Buchholz, A.B.Zorin