Electromagnetic manipulation for anti-Zeno effect in an engineered   quantum tunneling process
  We investigate the quantum Zeno and anti-Zeno effects for the irreversible quantum tunneling from a quantum dot to a ring array of quantum dots. By modeling the total system with the Anderson-Fano-Lee model, it is found that the transition from the quantum Zeno effect to quantum anti-Zeno effect can happen as the magnetic flux and the gate voltage were adjusted. 
Lan Zhou, F. M. Hu, Jing Lu, C. P. Sun