Phase study of oscillatory resistances in high mobility GaAs/AlGaAs   devices: Indications of a new class of integral quantum Hall effect
  An experimental study of the high mobility GaAs/AlGaAs system at large-$\nu$ indicates several distinct phase relations between the oscillatory diagonal- and Hall- resistances, and suggests a new class of integral quantum Hall effect, which is characterized by "anti-phase" Hall- and diagonal- resistance oscillations. 
R. G. Mani, W. B. Johnson, V. Umansky, V. Narayanamurti, and K. Ploog