Tunneling anisotropic magnetoresistance and spin-orbit coupling in   Fe/GaAs/Au tunnel junctions
  We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage, suggesting that the effect originates from the interference of the spin-orbit coupling at the interfaces. Corresponding model calculations reproduce the experimental findings very well. 
J. Moser, A. Matos-Abiague, D. Schuh, W. Wegscheider, J. Fabian, D.   Weiss