Spin transport through a single self-assembled InAs quantum dot with   ferromagnetic leads
  We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage. 
K. Hamaya, S. Masubuchi, M. Kawamura, T. Machida, M. Jung, K. Shibata,   K. Hirakawa, T. Taniyama, S. Ishida and Y. Arakawa