Electric field effect modulation of transition temperature, mobile   carrier density and in-plane penetration depth in NdBa2Cu3O(7-delta) thin   films
  We explore the relationship between the critical temperature, T_c, the mobile areal carrier density, n_2D, and the zero temperature magnetic in-plane penetration depth, lambda_ab(0), in very thin underdoped NdBa2Cu3O{7-delta} films near the superconductor to insulator transition using the electric field effect technique. We observe that T_c depends linearly on both, n_2D and lambda_ab(0), the signature of a quantum superconductor to insulator (QSI) transition in two dimensions with znu-bar where z is the dynamic and nu-bar the critical exponent of the in-plane correlation length. 
D. Matthey (1), N. Reyren (1), T. Schneider (2) and J.-M. Triscone (1)   ((1) University of Geneva, (2) University of Zurich)