Tuning of the spin-orbit interaction in two-dimensional GaAs holes via   strain
  We report direct measurements of the spin-orbit interaction induced spin-splitting in a modulation-doped GaAs two-dimensional hole system as a function of anisotropic, in-plane strain. The change in spin-subband densities reveals a remarkably strong dependence of the spin-splitting on strain, with up to about 20% enhancement of the splitting upon the application of only about 2 x 10^{-4} strain. The results are in very good agreement with our numerical calculations of the strain-induced spin-splitting. 
B. Habib, J. Shabani, E. P. De Poortere, M. Shayegan, R. Winkler