Sputtered Gold as an Effective Schottky Gate for Strained Si/SiGe   Nanostructures
  Metallization of Schottky surface gates by sputtering Au on strained Si/SiGe heterojunctions enables the depletion of the two dimensional electron gas (2DEG) at a relatively small voltage while maintaining an extremely low level of leakage current. A fabrication process has been developed to enable the formation of sub-micron Au electrodes sputtered onto Si/SiGe without the need of a wetting layer. 
G. D. Scott, M. Xiao, E. T. Croke, E. Yablonovitch, and H. W. Jiang