Magneto-resistive memory in ferromagnetic (Ga,Mn)As nanostructures
  We show a novel magneto-resistive effect that appears in lithographically shaped, three-arm nanostructure, fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different pairs of arms in the structure, reveals as a dependence of zero-field resistance on the direction of previously applied magnetic field. This effect could allow designing devices with unique switching and memory properties. 
T. Figielski, T. Wosinski, A. Morawski, A. Makosa, J. Wrobel and J.   Sadowski