Hopping Conduction in Disordered Carbon Nanotubes
  We report electrical transport measurements on individual disordered carbon nanotubes, grown catalytically in a nanoporous anodic aluminum oxide template. In both as-grown and annealed types of nanotubes, the low-field conductance shows as exp[-(T_{0}/T)^{1/2}] dependence on temperature T, suggesting that hopping conduction is the dominant transport mechanism, albeit with different disorder-related coefficients T_{0}. The field dependence of low-temperature conductance behaves an exp[-(xi_{0}/xi)^{1/2}] with high electric field xi at sufficiently low T. Finally, both annealed and unannealed nanotubes exhibit weak positive magnetoresistance at low T = 1.7 K. Comparison with theory indicates that our data are best explained by Coulomb-gap variable range hopping conduction and permits the extraction of disorder-dependent localization length and dielectric constant. 
D. P. Wang, D. E. Feldman, B. R. Perkins, A. J. Yin, G. H. Wang, J. M.   Xu, and A. Zaslavsky