Design and Performance of an InGaAs-InP Single-Photon Avalanche Diode   Detector
  This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described. 
Sara Pellegrini, Ryan E. Warburton, Lionel J. J. Tan, Jo Shien Ng,   Andrey B. Krysa, Kristian Groom, John P. R. David, Serg...