Vortex state microwave resistivity in Tl-2212 thin films
  We present measurements of the field induced changes in the 47 GHz complex resistivity, $\Delta \tilde \rho(H,T)$, in Tl$_{2}$Ba$_{2}$CaCu$_{2}$O$_{8+x}$ (TBCCO) thin films with $T_{c}\simeq$ 105 K, prepared on CeO$_{2}$ buffered sapphire substrates. At low fields ($\mu_{0}H<$10 mT) a very small irreversible feature is present, suggesting a little role of intergranular phenomena. Above that level $\Delta \tilde \rho(H,T)$ exhibits a superlinear dependence with the field, as opposed to the expected (at high frequencies) quasilinear behaviour. We observe a crossover between predominantly imaginary to predominantly real (dissipative) response with increasing temperature and/or field. In addition, we find the clear scaling property $\Delta \tilde \rho(H,T)=\Delta \tilde \rho[H/H^{*}(T)]$, where the scaling field $H^{*}(T)$ maps closely the melting field measured in single crystals. We discuss our microwave results in terms of loss of flux lines rigidity. 
N. Pompeo, S. Sarti, R. Marcon, H. Schneidewind, E. Silva