Comparison of Process of Diffusion of Interstitial Oxygen Atoms and   Interstitial Hydrogen Molecules in Silicon and Germanium Crystals:   Quantumchemical Simulation
  The theoretical analysis of the process of diffusion of interstitial oxygen atoms and hydrogen molecules in silicon and germanium crystals has been performed. The calculated values of the activation energy and pre-exponential factor for an interstitial oxygen atom Ea(Si) = 2.59 eV, Ea(Ge) = 2.05 eV, D(Si)= 0.28 cm2s-1, D(Ge)= 0.39 cm2s-1 and interstitial hydrogen molecule Ea(Si) = 0.79-0.83 eV, Ea(Ge) = 0.58-0.62 eV, D(Si)= 7.4 10(-4) cm2s-1, D(Ge)= 6.5 10(-4) cm2s-1 are in an excellent agreement with experimental ones and for the first time describe perfectly an experimental temperature dependence of an interstitial oxygen atom and hydrogen molecules diffusion constant in Si and Ge crystals. It is shown, that for a case of impurity atom with a strong interaction with a lattice (interstitial oxygen atom) process of diffusion has a cooperative nature - the activation energy and pre-exponential are controlled by the optimum position of three nearest lattice atoms. For a case of extended defect with a weak interaction (an interstitial hydrogen molecule) process of diffusion is determined by the activation barrier subjected to fluctuations connected with rotation of a hydrogen molecule. The effect of hydrostatic pressure on the process of diffusion is discussed also. 
Vasilii Gusakov