Conductance Quantization in Schottky-gated Si/SiGe Quantum Point   Contacts
  We report on the fabrication and electronic transport characterisation of Schottky-gated strongly confined Si/SiGe quantum point contacts (QPC). At zero magnetic field and T=450mK the QPC conductance as a function of gate voltage shows a quantization in units of e^2/h, indicative of transport through 1D modes which appear to lack both spin and valley degeneracy. 
G. Scappucci, L. Di Gaspare, E. Giovine, A. Notargiacomo, R. Leoni,   and F. Evangelisti