Electron Scattering in Thin GaAs Quantum Wires
  In this paper the scattering rates of electrons in thin free standing GaAs quantum wires in the electric quantum limit are calculated self-consistently taking into account the collisional broadening caused by scattering processes. The following mechanisms of scattering are considered: one-dimensional acoustic and polar optical phonons, surface roughness and ionized impurities. The non-parabolicity of electron energy spectrum is also taken into account. 
Dmitry Pozdnyakov, Vadim Galenchik, Andrei Borzdov