Electrically tunable g-factors in quantum dot molecular spin states
  We present a magneto-photoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong resonant increase or decrease in the g-factors of different spin states that have molecular wavefunctions distributed over both quantum dots. We propose a phenomenological model for the change in g-factor based on resonant changes in the amplitude of the wavefunction in the barrier due to the formation of bonding and antibonding orbitals. 
M. F. Doty, M. Scheibner, I. V. Ponomarev, E. A. Stinaff, A. S.   Bracker, V. L. Korenev, T. L. Reinecke, D. Gammon