Energy Transport between Hole Gas and Crystal Lattice in Diluted   Magnetic Semiconductor
  The temperature dependent energy transfer rate between charge carriers and lattice has been experimentally investigated in ferromagnetic semiconductors. Studied 100 nm thick low-temperature MBE grown Mn_{x}Ga_{1-x}As samples had manganese concentrations x=3.7 % and 4.0 %. Curie temperatures estimated from temperatures of peak resistivities were 60 K and 62 K, respectively. 
J.M. Kivioja, M. Prunnila, S. Novikov, P. Kuivalainen, and J. Ahopelto