Tunneling current induced phonon generation in nanostructures
  We analyze generation of phonons in tunneling structures with two electron states coupled by electron-phonon interaction. The conditions of strong vibration excitations are determined and dependence of non-equilibrium phonon occupation numbers on the applied bias is found. For high vibration excitation levels self consistent theory for the tunneling transport is presented. 
P.I. Arseyev, N.S. Maslova