Spin-polarized transport in ferromagnetic multilayered semiconductor   nanostructures
  The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent mobility, conductivity and resistivity in (Ga,Mn)As/GaAs,(Ga,Mn)N/GaN, and (Si,Mn)/Si multilayers are calculated as a function of temperature, scaled by the average magnetization of the diluted magnetic semiconductor layers. An increase of the resistivity near the transition temperature is obtained. We observed that the spin-polarized transport properties changes strongly among the three materials. 
E. J. R. Oliveira, A. T. da Cunha Lima, M. A. Boselli, G. M. Sipahi,   S. C. P. Rodrigues, and I. C. da Cunha Lima