Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe   tunnel junctions
  We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance effect (TMR) was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is increased and observable at room temperature. If an epitaxial Fe/GaAs(001) interface is involved, the tunnel junction exhibits a bias dependent inversion of the TMR effect. This is a first experimental signature for band structure effects at a Fe/GaAs interface and relevant for spin injection experiments. 
J. Moser, M. Zenger, C. Gerl, D. Schuh, R. Meier, P. Chen, G.   Bayreuther, W. Wegscheider, D. Weiss, C.-H. Lai, R.-T. Huang...