Velocity of domain-wall motion induced by electrical current in a   ferromagnetic semiconductor (Ga,Mn)As
  Current-induced domain-wall motion with velocity spanning over five orders of magnitude up to 22 m/s has been observed by magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin-transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found. 
M. Yamanouchi, D. Chiba, F. Matsukura, T. Dietl, H. Ohno