Theoretical analysis of the implementation of a quantum phase gate with   neutral atoms on atom chips
  We present a detailed, realistic analysis of the implementation of a proposal for a quantum phase gate based on atomic vibrational states, specializing it to neutral rubidium atoms on atom chips. We show how to create a double--well potential with static currents on the atom chips, using for all relevant parameters values that are achieved with present technology. The potential barrier between the two wells can be modified by varying the currents in order to realize a quantum phase gate for qubit states encoded in the atomic external degree of freedom. The gate performance is analyzed through numerical simulations; the operation time is ~10 ms with a performance fidelity above 99.9%. For storage of the state between the operations the qubit state can be transferred efficiently via Raman transitions to two hyperfine states, where its decoherence is strongly inhibited. In addition we discuss the limits imposed by the proximity of the surface to the gate fidelity. 
E. Charron, M. A. Cirone, A. Negretti, J. Schmiedmayer, T. Calarco