Tunable plasma wave resonant detection of optical beating in high   electron mobility transistor
  We report on tunable terahertz resonant detection of two 1.55 &micro;m cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. We show that the fundamental plasma resonant frequency and its odd harmonics can be tuned with the applied gate-voltage in the range 75-490 GHz. The observed frequency dependence on gate-bias is found to be in good agreement with the theoretical plasma waves dispersion law. 
J\'er\'emi Torres (CEM2), P. Nouvel (CEM2), A. Akwoue-Ondo (CEM2), L.   Chusseau (CEM2), F. Teppe (GES), A. Shchepetov (IEMN...