Observation of thermally activated glassiness and memory dip in a-NbSi   insulating thin films
  We present electrical conductance measurements on amorphous NbSi insulating thin films. These films display out-of equilibrium electronic features that are markedly different from what has been reported so far in disordered insulators. Like in the most studied systems (indium oxide and granular Al films), a slow relaxation of the conductance is observed after a quench to liquid helium temperature which gives rise to the growth of a memory dip in MOSFET devices. But unlike in these systems, this memory dip and the related conductance relaxations are still visible up to room temperature, with clear signatures of a temperature dependent dynamics. 
Julien Delahaye (NEEL), Thierry Grenet (NEEL), C. Marrache-Kikuchi   (CSNSM), L. Berg\'e (CSNSM), A. A. Drillien (CSNSM)
cond-mat.dis-nn cond-mat.mtrl-sci