Fingerprints of Inelastic Transport at the Surface of the Topological   Insulator Bi2Se3: Role of Electron-Phonon Coupling
  We report on electric-field and temperature dependent transport measurements in exfoliated thin crystals of Bi$_{2}$Se$_{3}$ topological insulator. At low temperatures ($< 50$ K) and when the chemical potential lies inside the bulk gap, the crystal resistivity is strongly temperature dependent, reflecting inelastic scattering due to the thermal activation of optical phonons. A linear increase of the current with voltage is obtained up to a threshold value at which current saturation takes place. We show that the activated behavior, the voltage threshold and the saturation current can all be quantitatively explained by considering a single optical phonon mode with energy $\hbar \Omega \approx 8$ meV. This phonon mode strongly interacts with the surface states of the material and represents the dominant source of scattering at the surface at high electric fields. 
M. V. Costache, I. Neumann, J. F. Sierra, V. Marinova, M. M.   Gospodinov, S. Roche, and S. O. Valenzuela
cond-mat.mes-hall