Magnetic and magneto-transport characterization of (Ga,Mn)(Bi,As)   epitaxial layers
  High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Bi incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Bi into the layers is interpreted as a result of increased spin-orbit coupling in the (Ga,Mn)(Bi,As) layers. 
K. Levchenko, T. Andrearczyk, J. Z. Domagala, T. Wosinski, T.   Figielski and J. Sadowski
cond-mat.mtrl-sci