Manifestation of unexpected semiconducting properties in few-layer   orthorhombic arsenene
  In this express, we demonstrate few-layer orthorhombic arsenene is an ideal semiconductor. Due to the layer stacking, multilayer arsenenes always behave as intrinsic direct bandgap semiconductors with gap values of around 1 eV. In addition, these bandgaps can be further tuned in its nanoribbons. Based on the so-called acoustic phonon limited approach, the carrier mobilities are predicted to approach as high as several thousand square centimeters per volt-second and simultaneously exhibit high directional anisotropy. All these make few-layer arsenene promising for device applications in semiconducting industry. 
Z. Y. Zhang, Jiafeng Xie, D. Z. Yang, Y. H. Wang, M. S. Si, and D. S.   Xue
physics.comp-ph cond-mat.mtrl-sci