Valence modulations in CeRuSn
  CeRuSn exhibits an extraordinary room temperature structure at 300~K with coexistence of two types of Ce ions, namely trivalent Ce$^{3+}$ and intermediate valent Ce$^{(4-\delta)+}$, in a metallic environment. The ordered arrangement of these two Ce types on specific crystallographic sites results in a doubling of the unit cell along the $c$-axis with respect to the basic monoclinic CeCoAl-type structure. Below room temperature, structural modulation transitions with very broad hysteresis have been reported from measurements of various bulk properties. X-ray diffraction revealed that at low temperatures the doubling of the CeCoAl type structure is replaced by a different modulated ground state, approximating a near tripling of the basic CeCoAl cell. The transition is accompanied by a significant contraction of the $c$ axis. We present new x-ray absorption near-edge spectroscopy data at the Ce L$_{3}$ absorption edge, measured on a freshly cleaved surface of a CeRuSn single crystal. In contrast to a previous report, the new data exhibit small but significant variations as function of temperature that are consistent with a transition of a fraction of Ce$^{3+}$ ions to the intermediate valence state, analogous to the $\gamma \rightarrow \alpha$ transition in elemental cerium, when cooling through the structural transitions of CeRuSn. Such results in a valence-modulated state. 
R. Feyerherm, E. Dudzik, K. Prokes, J. A. Mydosh, Y.-K. Huang, R.   P\"ottgen
cond-mat.str-el