Magnetisms in $p$-type monolayer gallium chalcogenides (GaSe, GaS)
  Magnetisms in $p$-type monolayer GaX (X=S,Se) is investigated by performing density-functional calculations. Due to the large density of states near the valence band edge, these monolayer semiconductors are ferromagnetic within a small range of hole doping. The intrinsic Ga vacancies can promote local magnetic moment while Se vacancies cannot. Magnetic coupling between vacancy-induced local moments is ferromagnetic and surprisingly long-range. The results indicate that magnetization can be induced by hole doping and can be tuned by controlled defect generation. 
Sianxin Wu, Xia Dai, Hongyi Yu, Heng Fan, Jiangping Hu and Wang Yao
cond-mat.mes-hall cond-mat.mtrl-sci