Two-dimensional electron gas in monolayer InN quantum wells
  We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5x10^{15} cm^{-2} and 420 cm^2/Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES. 
W. Pan, E. Dimakis, G.T. Wang, T.D. Moustakas, and D.C. Tsui
cond-mat.mes-hall