High-Quality BN-Graphene-BN Nanoribbon Capacitors Modulated by Graphene   Side-gate Electrodes
  High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene are experimentally realized. Graphene electronic properties can be significantly modulated by the double side-gates. The modulation effects are very obvious and followed the metallic electrode behavior of numerical simulations, while the theoretically predicted negative quantum capacitance was not observed, possibility due to the over-estimated or weakened interactions between the graphene nanoribbon and side-gate electrodes. 
Yang Wang, Xiaolong Chen, Weiguang Ye, Zefei Wu, Yu Han, Tianyi Han,   Yuheng He, Yuan Cai and Ning Wang
cond-mat.mes-hall