Exciton-plasmaritons in graphene-semiconductor structures
  We study strong coupling between plasmons in monolayer charge-doped graphene and excitons in a narrow gap semiconductor quantum well separated from graphene by a potential barrier. We show that the Coulomb interaction between excitons and plasmons result in mixed states described by a Hamiltonian similar to that for exciton-polaritons and derive the exciton-plasmon coupling constant that depends on system parameters. We calculate numerically the Rabi splitting of exciton- plasmariton dispersion branches for several semiconductor materials and find that it can reach values of up to 50 - 100 meV. 
Kirill A. Velizhanin, Tigran. V. Shahbazyan
cond-mat.mes-hall