Effect of traps on the current impulse from X-ray induced conductivity   in wide-gap semiconductors
  This article presents a theoretical model for the calculation of the current impulse from X-ray induced conductivity in wide-gap semiconductors that contain different types of traps and recombination centres. The absorption of one X-ray photon in a semiconductor with ohmic contacts was investigated. The influence of the main parameters of the traps and recombination centres on the shape and amplitude of the current impulse was determined. 
A.Sofiienko, V.Ya. Degoda
cond-mat.mtrl-sci