A study of the magnetotransport properties of the graphene (I.   Monolayer)
  We present a single electron approach to analyse the magnetotransport properties of the monolayer graphene as a function of both, the gate voltage and the magnetic field; and, also, their evolution with temperature. The model proposed means the extension of our previous one developed for studying the quantum Hall and Shubnikov-de Haas effects of a two-dimensional electron system in a semiconductor quantum well. Now, the study in this framework of both phenomena in graphene involves including the presence of two bands and two degeneracy valleys, (points K and K' in the reciprocal space). Based in a single electron approximation, we show it is capable to reproduce the entire characteristics observed in the experiments for the Hall and diagonal magnetoconductivities (and the corresponding magnetoresistivities), as a function of the gate voltage and the magnetic field. In the model the observed Hall plateaux series in the monolayer graphene, determined by the expression 2(2n+1), arises in a natural way as a consequence of the particular quantization of the energy spectrum of graphene. Therefore, on the other hand the proposed approach integrates the quantum Hall effects observed in graphene and quantum wells semiconductors 
M. A. Hidalgo
cond-mat.mes-hall