Spin-flip Raman scattering of the $\Gamma$-X mixed exciton in indirect   band-gap (In,Al)As/AlAs quantum dots
  The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the $\Gamma$- and X-conduction band valleys, from which control of their spin states can be gained. This access is used here for studying the exciton spin-level structure by resonant spin-flip Raman scattering, allowing us to accurately measure the anisotropic hole and isotropic electron $g$ factors. The spin-flip mechanisms for the indirect exciton and its constituents as well as the underlying optical selection rules are determined. The spin-flip intensity is a reliable measure of the strength of $\Gamma$-X-valley mixing, as evidenced by both experiment and theory. 
J. Debus, T. S. Shamirzaev, D. Dunker, V. F. Sapega, E. L. Ivchenko,   D. R. Yakovlev, A. I. Toropov, and M. Bayer
cond-mat.mes-hall