Intrinsic interface states in InAs-AlSb heterostructures
  We examine the possibility of intrinsic interface states bound to the plane of In-Sb chemical bonds at InAs/AlSb interfaces. Careful parameterization of the bulk materials in the frame of the extended basis spds^* tight-binding model and recent progress in predictions of band offsets severely limit the span of tight-binding parameters describing this system. We find that a heavy-hole like interface state bound to the plane of In-Sb bonds exists for a large range of values of the InSb/InAs band offset. 
F. Raouafi and R. Benchamekh and M.O. Nestoklon and J-M. Jancu and P.   Voisin
cond-mat.mtrl-sci