Magnetization in AIIIBV semiconductor heterostructures with the   depletion layer of manganese
  The magnetic moment and magnetization in GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn $\delta$-layer thicknesses near GaInAs-quantum well ($\sim$3 nm) in temperature range T=(1.8-300)K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found. 
T. Charikova, V. Okulov, A. Gubkin, A. Lugovikh, K. Moiseev, V.   Nevedomsky, Yu. Kudriavstev, S. Gallardo, M. Lopez
cond-mat.mtrl-sci