Cathodoluminescence of stacking fault bound excitons for local probing   of the exciton diffusion length in single GaN nanowires
  We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning transmission electron microscopy. We show that some nanowires exhibit well localized regions emitting light at the energy of a stacking fault bound exciton (3.42 eV) and are able to observe the presence of a single stacking fault in these regions. Precise measurements of the cathodoluminescence signal in the vicinity of the stacking fault give access to the exciton diffusion length near this location. 
Gilles Nogues (NEEL, NEEL), Thomas Auzelle (SP2M - UMR 9002), Martien   Den Hertog (NEEL, NEEL), Bruno Gayral (SP2M - UMR 90...
cond-mat.mes-hall cond-mat.mtrl-sci