The 2D metal-insulator transition as a strong localization induced   crossover phenomenon
  Low-disorder and high-mobility 2D electron (or hole) systems undergo an apparent metal-insulator-transition (MIT) at low temperatures as the carrier density (n) is varied. In some situations, the 2D MIT can be caused at a fixed low carrier density by changing an externally applied in-plane magnetic field parallel to the 2D layer. d\rho/dT changes its sign at some nonuniversal sample-dependent critical carrier density n_c separating an effective 2D metal (d\rho/dT >0) for n>n_c from an effective 2D insulator (d\rho/dT<0) for n<n_c. We study the 2D MIT phenomenon as a possible strong localization induced crossover process controlled by the Ioffe-Regel criterion, k_F l=1. Calculating the quantum mean free path (l) in the effective metallic phase from a realistic transport theory including disorder scattering effects, we solve the integral equation defined by the Ioffe-Regel criterion to obtain the nonuniversal critical density n_c as a function of the applicable physical experimental parameters including disorder strength, in-plane magnetic field, spin and valley degeneracy, background dielectric constant and carrier effective mass, and temperature. The key physics underlying the nonuniversal parameter dependence of the n_c is the temperature and density dependence of the Coulomb disorder. Our calculated results for the crossover n_c appear to be in qualitative and semi-quantitative agreement with the available experimental data in different 2D semiconductor systems lending credence to the possibility that the apparent 2D MIT signals the onset of the strong localization crossover in disordered 2D systems. We provide some results for graphene where a low-temperature 2D MIT becomes possible in the presence of intervalley scattering. We also provide an extensive comparison with the theoretical results obtained on the basis of 2D MIT being considered as a percolation transition. 
S. Das Sarma and E. H. Hwang
cond-mat.mes-hall cond-mat.dis-nn