Reversal-mechanism of in-plane current induced perpendicular switching   in a single ferromagnetic layer
  We propose a magnetization reversal model to explain the perpendicular switching of a single ferromagnetic layer induced by an in-plane current. Contrary to previously proposed reversal mechanisms that such magnetic switching is directly from the Rashba or spin Hall effects, we suggest that this type of switching arises from the current-induced chirality dependent domain wall motion. By measuring the field dependent switching behaviors, we show that such switching can also be achieved between any two multidomain states, and all of these switching behaviors can be well explained by this model. This model indicates that the spin Hall angle in such structures may be overestimated and also predicts similar switching behaviors in other ferromagnetic structures with chiral domain walls or skyrmions. 
Chong Bi and Ming Liu
cond-mat.mes-hall