Temperature dependent characteristics of GaSb p-channel MOSFETs with   Si-implanted source and drain
  GaSb p-channel MOSFETs with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si implanted source/drain are demonstrated. Thermal anneal conditions are optimized for the source/drain impurity activation. Temperature dependent electrical characteristics are investigated. Different electrical behaviors are observed in two different temperature regions and the mechanisms underneath are proposed. Off-state drain current is generation current dominated in the low temperature regions and is diffusion current dominated in the high temperature regions. 
Lianfeng Zhao, Zhen Tan, Jing Wang, and Jun Xu
cond-mat.mtrl-sci