Tuning the electrically evaluated electron Lande g factor in GaAs   quantum dots and quantum wells of different well widths
  We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g factor determined from analysis of the magneto-transport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron g factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Lande electron g factor of the quantum dot is primarily governed by the electron g factor of the quantum well suggesting that well width is an ideal design parameter for g-factor engineering QDs. 
G. Allison, T. Fujita, K. Morimoto, S. Teraoka, M. Larsson, H. Kiyama,   A. Oiwa, S. Haffouz, D. G. Austing, A. Ludwig, A. D...
cond-mat.mes-hall