Patterned silicon substrates: a common platform for room temperature GaN   and ZnO polariton lasers
  A new platform for fabricating polariton lasers operating at room temperature is introduced: nitride-based distributed Bragg reflectors epitaxially grown on patterned silicon substrates. The patterning allows for an enhanced strain relaxation thereby enabling to stack a large number of crack-free AlN/AlGaN pairs and achieve cavity quality factors of several thousands with a large spatial homogeneity. GaN and ZnO active regions are epitaxially grown thereon and the cavities are completed with top dielectric Bragg reflectors. The two structures display strong-coupling and polariton lasing at room temperature and constitute an intermediate step in the way towards integrated polariton devices. 
J. Zuniga-Perez, E. Mallet, R. Hahe, M. J. Rashid, S. Bouchoule, C.   Brimont, P. Disseix, J. Y. Duboz, G. Gomm\'e, T. Guill...
cond-mat.mes-hall physics.optics