Partial Inhibition of Spontaneous Voltage Recovery (`Memory Effect') of   Commercial EDLC Supercapacitors by Stationary Magnetic Field
  We report preliminary findings on partial inhibition of spontaneous voltage recovery under open circuit conditions, following full charge and discharge to null potential (`memory effect'), of commercial EDLC supercapacitors of Faradaic values ranging between 1-25 Farad (rated at 2.7 volts), upon exposure to an approximately homogeneous, stationary magnetic field of about 100 milli-Tesla. 
Sekhar Banerjee and Parthasarathi Majumdar
cond-mat.mes-hall