Efficiency analysis of betavoltaic elements
  The conversion of energy of electrons produced by a radioactive source into electricity in a Si and SiC $\textit{p-n}$ junctions is modeled. The features of the generation function describing the electron-hole pair production by an electron flow and the emergence of a "dead layer" are discussed. The collection efficiency, $Q$, describing the rate of electron-hole pair production by incident beta particles, is calculated taking into account the presence of the "dead layer". It is shown that in the case of high-grade Si $\textit{p-n}$ junctions, the collection efficiency, $Q$, of electron-hole pairs created by a high-energy electrons flux, e.g. Pm-147 beta flux, is close or equal to 1 in a wide range of electron energies. For SiC junctions, $Q$ is large enough (about 1) only for electrons with relatively low energies of about 5 keV, as produced, e.g., by a tritium source, and decreases rapidly with further increase of electron energy. The conditions, under which the influence of the "dead layer" on the collection efficiency is negligible, are determined. The open-circuit voltage is obtained for realistic values of the minority carriers' diffusion coefficient and lifetime in Si and SiC $\textit{p-n}$ junctions irradiated by a high-energy electrons flux. Our calculations allow us to estimate the attainable efficiency of betavoltaic elements. 
A.V. Sachenko, A.I. Shkrebtii, R.M. Korkishko, V.P. Kostylyov, M.R.   Kulish and I.O. Sokolovskyi
cond-mat.mtrl-sci