Near field thermal memory device
  We report the concept of a near-field memory device based on the radiative bistability effect in the system of two closely separated parallel plates of SiO$_2$ and VO$_2$ which exchange heat by thermal radiation in vacuum. We demonstrate that the VO$_2$ plate, having metal-insulator transition at 340 K, has two thermodynamical steady-states. One can switch between the states using an external laser impulse. We show that due to near-field photon tunneling between the plates, the switching time is found to be only 5 ms which is several orders lower than in case of far field. 
S. A. Dyakov and J. Dai and M. Yan and M. Qiu
cond-mat.mtrl-sci