Anharmonic decay of phonons in semiconductors from first-principles   calculations
  The anharmonic contribution to phonon lifetime and its temperature dependence is calculated from first principle in C, Si and Ge using third-order density-functional perturbation theory. Good agreement with available experimental data is obtained. Different competing two-phonon decay channels are compared and correlated with the density of final states. 
Alberto Debernardi, Stefano Baroni and Elisa Molinari