Extended Si defects
  We perform total energy calculations based on the tight-binding Hamiltonian scheme (i) to study the structural properties and energetics of the extended {311} defects depending upon their dimensions and interstitial concentrations and (ii) to find possible mechanisms of interstitial capture by and release from the {311} defects. The generalized orbital-based linear-scaling method implemented on Cray-T3D is used for supercell calculations of large scale systems containing more than 1000 Si atoms. 
Jeongnim Kim, John W. Wilkins, and Furrukh S. Khan (Ohio State   University), and Andrew Canning (Cray Research Switzerland)