Single hole dispersion relation for the real CuO$_2$ plane
  Dispersion relation for the CuO$_2$ hole is calculated basing on the {\it generalized} $t$-$t^{\prime}$-$J$ model, recently derived from the three-band one. Numerical ranges for all model parameters, $t/J=2.4..2.7$, $t^{\prime}/t = 0..-0.25$, $t^{\prime\prime}/t=0.1..0.15$, and three-site terms $2t_N\sim t_S\sim J/4$, have been strongly justified previously. Physical reasons for their values are also discussed. Self-consistent Born approximation is used for the calculation of the hole dispersion. An excellent agreement between calculated $E_{\bf k}$ and one obtained from the angle-resolved photoemission experiments is found. 
V. I. Belinicher, A. L. Chernyshev, and V. A. Shubin (Institute of   Semiconductor Physics, Novosibirsk, Russia)