A Field Effect Transitor based on the Mott Transition in a Molecular   Layer
  Here we propose and analyze the behavior of a FET--like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal--insulator transition. The device has FET-like characteristics with a low ``ON'' impedance and high ``OFF'' impedance. Function of the device is feasible down to nanoscale dimensions. Implementation with a class of organic charge transfer complexes is proposed. 
C. Zhou, D. M. Newns, J. A. Misewich and P. C. Pattnaik, (IBM T. J.   Watson Research Center, Yorktown Heights, NY)