Incomplete melting of the Si(100) surface from molecular-dynamics   simulations using the Effective-Medium Tight-Binding model
  We present molecular-dynamics simulations of the Si(100) surface in the temperature range 1100-1750K. To describe the total energy and forces we use the Effective-Medium Tight-Binding model. The defect-free surface is found to melt at the bulk melting point, which we determine to be 1650 K, but for a surface with dimer vacancies we find a pre-melting of the first two layers 100 K below the melting point. We show that these findings can rationalize recent experimental studies of the high temperature Si(100) surface. 
K. Stokbro K. W. Jacobsen, J. K. N{\o}rskov, D. M. Deaven, C. Z. Wang,   and K. M. Ho