Spin-dependent tunneling in metal-insulator-narrow gap semiconductor   structures in a magnetic field
  We present results of tunneling studies of p-Hg_{1-x}Cd_{x}Te-oxide-Al structures with 0.165<x<0.2 in a magnetic field up to 6 T. The tunneling conductivity oscillations resulting from the Landau quantization of the energy spectrum in the semiconductor volume are investigated. Under an in-plane magnetic field the amplitudes of tunneling conductivity maxima connected with the tunneling into `a' and `b' spin sublevels are found to differ substantionally from one another, and the amplitude ratio varying from structure to structure. To understand the cause of this behavior, the tunneling conductivity for this magnetic field orientation is calculated taking into consideration the multi-band energy spectrum. It is shown that the contributions of the different spin-sublevels to the tunneling conductivity are dissimilar and the relationship between them depends strongly on the value of surface potential. 
G.M. Minkov, O.E. Rut, and A.V. Germanenko