The equilibrium shape of InAs quantum dots grown on a GaAs(001)   substrate
  The equilibrium shape of strained InAs quantum dots grown epitaxially on a GaAs(001) substrate is derived as a function of volume. InAs surface energies are calculated within density-functional theory, and a continuum approach is applied for the elastic relaxation energies. 
Eckhard Pehlke, Nikolaj Moll, and Matthias Scheffler