Hole spin polarization in GaAlAs:Mn structures
  A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin polarization density is obtained for several structure configurations. Available experimental results are compared with theory. 
A. Ghazali, I. C. da Cunha Lima, and M. A. Boselli