Theoretical calculations of the primary defects induced by pions and   protons in SiC
  In the present work, the bulk degradation of SiC in hadron (pion and proton) fields, in the energy range between 100 MeV and 10 GeV, is characterised theoretically by means of the concentration of primary defects per unit fluence. The results are compared to the similar ones corresponding to diamond, silicon and GaAs. 
Sorina Lazanu, Ionel Lazanu, Emilio Borchi and Mara Bruzzi