Influence of nano-mechanical properties on single electron tunneling: A   vibrating Single-Electron Transistor
  We describe single electron tunneling through molecular structures under the influence of nano-mechanical excitations. We develop a full quantum mechanical model, which includes charging effects and dissipation, and apply it to the vibrating C$_{60}$ single electron transistor experiment by Park {\em et al.} {[Nature {\bf 407}, 57 (2000)].} We find good agreement and argue vibrations to be essential to molecular electronic systems. We propose a mechanism to realize negative differential conductance using local bosonic excitations. 
Daniel Boese (1,2) and Herbert Schoeller (2,1) ((1) TFP, U Karlsruhe,   (2) FZ Karlsruhe,INT)