Kinetics of exciton photoluminescence in type-II semiconductor   superlattices
  The exciton decay rate at a rough interface in type-II semiconductor superlattices is investigated. It is shown that the possibility of recombination of indirect excitons at a plane interface essentially affects kinetics of the exciton photoluminescence at a rough interface. This happens because of strong correlation between the exciton recombination at the plane interface and at the roughness. Expressions that relate the parameters of the luminescence kinetics with statistical characteristics of the rough interface are obtained. The mean height and length of roughnesses in GaAs/AlAs superlattices are estimated from the experimental data. 
L.S. Braginsky, M.Yu. Zaharov, A.M. Gilinsky, V.V. Preobrazhenskii,   M.A. Putyato, and K.S. Zhuravlev