Spin Injection from Ferromagnetic Metals into Gallium Nitride
  The injection of spin polarized electrons from ferromagnetic metals (Fe and Co) into gallium nitride (GaN) via scanning tunneling microscopy (STM) is demonstrated. Electrons from STM tips are injected into the semiconductor. Net circular polarization of the emitted light is observed, which changes sign on reversal of the magnetization of the tip. The polarization is found to be in qualitative agreement with that expected from considerations based on the splitting of the valence bands due to spin-orbit coupling and the crystal field splitting corresponding to the wurtzite structure, and the magnitude of the spin polarization from the ferromagnetic metal. We find a lower bound for the spin injection efficiency of 25%, corresponding to a net spin polarization in the semiconductor of 10%. This is the largest reported value for a room temperature measurement of spin injection into semiconductors in air. 
C. J. Hill, X. Cartoixa, R. A. Beach, D. L. Smith, T. C. McGill