Interaction-assisted propagation of Coulomb-correlated electron-hole   pairs in disordered semiconductors
  A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair. 
D. Brinkmann (1), J.E. Golub (1), S.W. Koch (1), P. Thomas (1), K.   Maschke(2), I. Varga (1,3) ((1) Fachbereich Physik Phil...