Capacitance of Silicon Pixels
  Capacitance measurements have been made on silicon pixel sensors of types n+ on n, p+ on n, and n+ on p. The arrays test a variety of implant and gap widths, and the n+ on n devices test several p-stop designs. The measurements examine inter-pixel and backplane contributions and include studies of temperature dependence. Measurements were made before and after irradiation with fluences relevant to LHC experiments and Fermilab Tevatron Run 2. 
Grant Gorfine, Martin Hoeferkamp, Geno Santistevan, and Sally Seidel