Strain-Compensated AlInGaAs-GaAsP Superlattices for Highly-Polarized   Electron Emission
  Spin-polarized electron emission from the first superlattice photocathodes developed with strain compensation is investigated. An opposite strain in the quantum well and barrier layers is complished using an InAlGaAs/GaAsP superlattice structure. The measured values of maximum polarization and quantum yield for the structure with a 0.18 um-thick working layer are close to the best results reported for any strained superlattice photocathode structure, demonstrating the high potential of strain compensation for future photocathode applications. An analysis of the photoemission spectra is used to estimate the parameters responsible for the polarization losses. 
A.V. Subashiev, L.G. Gerchikov, Yu.A. Mamaev, Yu.P. Yashin, J.S.   Roberts, D.-A. Luh, T. Maruyama, J.E. Clendenin