Intrinsic Curie temperature bistability in ferromagnetic semiconductor   resonant tunneling diodes
  We predict bistability in the Curie temperature-voltage characteristic of double barrier resonant-tunneling structures with dilute ferromagnetic semiconductor quantum wells. Our conclusions are based on simulations of electrostatics and ballistic quantum transport combined with a mean-field theory description of ferromagnetism in dilute magnetic semiconductors. 
Swaroop Ganguly, A. H. MacDonald, L. F. Register, and S. Banerjee