Realizing a stable magnetic double-well potential on an atom chip
  We discuss design considerations and the realization of a magnetic double-well potential on an atom chip using current-carrying wires. Stability requirements for the trapping potential lead to a typical size of order microns for such a device. We also present experiments using the device to manipulate cold, trapped atoms. 
Jerome Esteve (LCFIO), Thorsten Schumm (LCFIO), Jean-Baptiste Trebbia   (LCFIO), Isabelle Bouchoule (LCFIO), Alain Aspect (L...