Magnetic-field induced band-structure change in CeBiPt
  We report on a field-induced change of the electronic band structure of CeBiPt as evidenced by electrical-transport measurements in pulsed magnetic fields. Above ~25 T, the charge-carrier concentration increases nearly 30% with a concomitant disappearance of the Shubnikov-de Haas signal. These features are intimately related to the Ce 4f electrons since for the non-4f compound LaBiPt the Fermi surface remains unaffected. Electronic band-structure calculations point to a 4f-polarization-induced change of the Fermi-surface topology. 
N. Kozlova, J. Hagel, M. Doerr, J. Wosnitza, D. Eckert, K.-H. Mueller,   L. Schultz, I. Opahle, S. Elgazzar, Manuel Richter,...