Interaction of Organic Surfaces with Active Species in the High-Vacuum   Environment
  Using single-crystal organic field-effect transistors with the conduction channel exposed to environmental agents we have observed generation of electronic defects at the organic surface in the high-vacuum environment. Rapid decrease of the source-drain current of an operating device is observed upon exposure of the channel to the species generated by high-vacuum gauges. We attribute this effect to interaction of the organic surface with electrically neutral free radicals produced in the process of hydrocarbon cracking on hot filaments with a relatively low activation energy Ea ~ 2.5 eV (240 kJ/mol). The reported results might be important for optimizing the high-vacuum processes of fabrication and characterization of a wide range of organic and molecular electronic devices. 
V. Podzorov, E. Menard, S. Pereversev, B. Yakshinsky, T. Madey, J. A.   Rogers, M. E. Gershenson