Transition from Mott insulator to superconductor in GaNb$_{4}$Se$_{8}$   and GaTa$_{4}$Se$_{8}$ under high pressure
  Electronic conduction in GaM$_{4}$Se$_{8}$ (M=Nb;Ta) compounds with the fcc GaMo$_{4}$S$_{8}$-type structure originates from hopping of localized unpaired electrons (S=1/2) among widely separated tetrahedral M$_{4}$ metal clusters. We show that under pressure these systems transform from Mott insulators to a metallic and superconducting state with T$_{C}$=2.9 and 5.8K at 13 and 11.5GPa for GaNb$_{4}$Se$_{8}$ and GaTa$_{4}$Se$_{8}$, respectively. The occurrence of superconductivity is shown to be connected with a pressure-induced decrease of the MSe$_{6}$ octahedral distortion and simultaneous softening of the phonon associated with MSe-bonds. 
M. M. Abd-Elmeguid, B. Ni, D. I. Khomskii, R. Pocha, D. Johrendt, X.   Wang, and K. Syassen