p-Type Sb-Doped ZnO Thin Films Prepared with Filtered Vacuum Arc   Deposition
  Thin p-type Sb-doped ZnO films were grown by filtered vacuum arc deposition (FVAD), on untreated glass samples. The arc cathode was prepared by dissolving Sb into molten Zn. The deposition was performed with 200 A arc current, running for 120-240 s in 0.426 Pa oxygen pressure. The film thickness was 330-500 nm. The aotmic concentration of Sb in the films was ~1.5%, whereas the O/Zn atomic concentration ratio was ~0.7. Sb incorporation into the polycrystalline ZnO matrix was concluded from XRD analysis. The film resistivity (0.15-0.3 Ohm*m), carrier density (~10^22 m^(-3)), and carrier type, were determined by Hall effect measurements. The carrier mobility in the p-type films was in the range (10-20)*10^(-4) m^2/V*s. The energy gap of doped films, determined from optical tranmittance measurements, was approximately 3.39 eV. 
T. David, S. Goldsmith, and R. L. Boxman