Nanomechanical Measurements of Magnetostriction and Magnetic Anisotropy   in (Ga,Mn)As
  A (Ga,Mn)As nanoelectromechanical resonator is used to obtain the first direct measurement of magnetostriction in a dilute magnetic semiconductor. Field-dependent magnetoelastic stress induces shifts in resonance frequency that can be discerned with a high resolution electromechanical transduction scheme. By monitoring the field dependence, the magnetostriction and anisotropy field constants can be simultaneously mapped over a wide range of temperatures. These results, when compared with theoretical predictions, appear to provide insight into a unique form of magnetoelastic behavior mediated by holes. 
S. C. Masmanidis, H. X. Tang, E. B. Myers, Mo Li, K. De Greve, G.   Vermeulen, W. Van Roy, and M. L. Roukes