Silicon nanostructures embedded in superconductor shells
  We present the findings of the superconductivity in the silicon nanostructures prepared by short time diffusion of boron of the n - type Si (100) surface. These Si - based nanostructures represent the p - type ultra-narrow self - assembled silicon quantum wells confined by the delta - barriers heavily with boron. The resistivity, thermo - emf and magnetic susceptibility studies show that the high temperature superconductivity observed seems to result from the single - hole tunnelling into the negative - U boron centres at the silicon quantum well - delta - barier interfaces. 
Nikolay T. Bagraev, Wolfgang Gehlhoff, Leonid E. Klyachkin, Anna M.   Malyarenko, Vladimir V. Romanov and Serguey A. Rykov