Electronic continuum states and far infrared absorption of InAs/GaAs   quantum dots
  The electronic continuum states of InAs/GaAs semiconductor quantum dots embedded in a GaAs/AlAs superlattice are theoretically investigated and the far infrared absorption spectra are calculated for a variety of structures and polarizations. The effect of a strong magnetic field applied parallel to the growth direction is also investigated. We predict that the flatness of the InAs/GaAs dots leads to a far infrared absorption which is almost insensitive to the magnetic field, in spite of the reorganization of the continuum into series of quasi-Landau states. We also predict that it is possible to design InAs/GaAs photoconductors which display very strong in-plane absorption. 
Duc Phuong Nguyen (LPA), Nicolas Regnault (LPA), Robson Ferreira   (LPA), Gerald Bastard (LPA)