Conductance quantization in etched Si/SiGe quantum point contacts
  We fabricated strongly confined Schottky-gated quantum point contacts by etching Si/SiGe heterostructures and observed intriguing conductance quantization in units of approximately 1e2/h. Non-linear conductance measurements were performed depleting the quantum point contacts at fixed mode-energy separation. We report evidences of the formation of a half 1e2/h plateau, supporting the speculation that adiabatic transmission occurs through 1D modes with complete removal of valley and spin degeneracies. 
G. Scappucci (1), L. Di Gaspare (1), E. Giovine (2), A. Notargiacomo   (2), R. Leoni (2) and F. Evangelisti (1 and 2) ((1) D...