The signature of a double quantum-dot structure in the I-V   characteristics of a complex system
  We demonstrate that by carefully analyzing the temperature dependent characteristics of the I-V measurements for a given complex system it is possible to determine whether it is composed of a single, double or multiple quantum-dot structure. Our approach is based on the orthodox theory for a double-dot case and is capable of simulating I-V characteristics of systems with any resistance and capacitance values and for temperatures corresponding to thermal energies larger than the dot level spacing. We compare I-V characteristics of single-dot and double-dot systems and show that for a given measured I-V curve considering the possibility of a second dot is equivalent to decreasing the fit temperature. Thus, our method allows one to gain information about the structure of an experimental system based on an I-V measurement. 
L. Bitton, D. Radovsky, A. Cohen, A. Frydman and R. Berkovits