Self Assembled II-VI Magnetic Quantum Dot as a Voltage-Controlled   Spin-Filter
  A key element in the emergence of a full spintronics technology is the development of voltage controlled spin filters to selectively inject carriers of desired spin into semiconductors. We previously demonstrated a prototype of such a device using a II-VI dilute-magnetic semiconductor quantum well which, however, still required an external magnetic field to generate the level splitting. Recent theory suggests that spin selection may be achievable in II-VI paramagnetic semiconductors without external magnetic field through local carrier mediated ferromagnetic interactions. We present the first experimental observation of such an effect using non-magnetic CdSe self-assembled quantum dots in a paramagnetic (Zn,Be,Mn)Se barrier. 
C. Gould, A. Slobodskyy, T. Slobodskyy, P. Grabs, D. Supp, P.   Hawrylak, F. Qu, G. Schmidt, L.W. Molenkamp