Charged exciton emission at 1.3 $\mu$m from single InAs quantum dots   grown by metalorganic chemical vapor deposition
  We have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition. Low-temperature photoluminescence spectroscopy shows emission from single QDs around 1300 nm; we clearly observe the formation of neutral and charged exciton and biexciton states, and we obtain a biexciton binding energy of 3.1 meV. The dots exhibit an s-p shell splitting of approximately 100 meV, indicating strong confinement. 
N. I. Cade, H. Gotoh, H. Kamada, T. Tawara, T. Sogawa, H. Okamoto and   H. Nakano