Self-assembly of parallel atomic wires and periodic clusters of silicon   on a vicinal Si(111) surface
  Silicon self-assembly at step edges in the initial stage of homoepitaxial growth on a vicinal Si(111) surface is studied by scanning tunneling microscopy (STM). The resulting atomic structures change dramatically from a parallel array of 0.7 nm wide wires to one dimensionally aligned periodic clusters of the diameter ~ 2 nm and periodicity 2.7 nm in the very narrow range of growth temperatures between 400 and 300 C. These nanostructures are expected to play an important role in future development of silicon quantum computers. Mechanisms leading to such distinct structures are discussed. 
T. Sekiguchi, S. Yoshida, and K. M. Itoh (Keio University)