Electronic structure and transport properties of La_0.7Ce_0.3MnO_3
  X-ray absorption spectroscopy (XAS), optical reflectance spectroscopy, and the Hall effect measurements were used to investigate the electronic structure in La_0.7Ce_0.3MnO_3 thin films (LCeMO). The XAS results are consistent with those obtained from LDA+U calculations. In that the doping of Ce has shifted up the Fermi level and resulted in marked shrinkage of hole pockets originally existing in La_0.7Ca_0.3MnO_3 (LCaMO). The Hall measurements indicate that in LCeMO the carriers are still displaying the characteristics of holes as LDA+U calculations predict. Analyses of the optical reflectance spectra evidently disapprove the scenario that the present LCeMO might have been dominated by the La-deficient phases. 
W. J. Chang, J. Y. Tsai, H.-T. Jeng, J.-Y. Lin, Kenneth Y.-J. Zhang,   H. L. Liu, J. M. Lee, J. M. Chen, K. H. Wu, T. M. Uen...