Transport properties of 2D-electron gas in a n-InGaAs/GaAs DQW in a   vicinity of low magnetic-field-induced Hall insulator--quantum Hall liquid   transition
  The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kTtau/hbar > 0.1 -- 3.5) for our samples, and the electron density is on a 'insulating' side of the so-called B = 0 2D metal--insulator transition. We show that the observed localization and Landau quantization is due to the Sigma_xy(T)anomalous T-dependence. 
Yu.G. Arapov, S.V. Gudina, G.I. Harus, V.N. Neverov, N.G.   Shelushinina, M.V. Yakunin, S.M. Podgornyh, E.A. Uskova, B.N. Zv...