Anisotropic positive magnetoresistance of a nonplanar 2D electron gas in   a parallel magnetic field
  We study the transport properties of a 2D electron gas in narrow GaAs quantum wells with AlAs/GaAs superlattice barriers. It is shown that the anisotropic positive magnetoresistance observed in selectively doped semiconductor structures in a parallel magnetic field is caused by the spatial modulation of the 2D electron gas. 
A.V.Goran, A.A.Bykov, A.K.Bakarov, J.C.Portal