Quantum kinetic theory of phonon-assisted carrier transitions in   nitride-based quantum-dot systems
  A microscopic theory for the interaction of carriers with LO phonons is used to study the ultrafast carrier dynamics in nitride-based semiconductor quantum dots. It is shown that the efficiency of scattering processes is directly linked to quasi-particle renormalizations. The electronic states of the interacting system are strongly modified by the combined influence of quantum confinement and polar coupling. Inherent electrostatic fields, typical for InGaN/GaN quantum dots, do not limit the fast scattering channels. 
J. Seebeck, T.R. Nielsen, P. Gartner, and F. Jahnke