Influence of domain wall interactions on nanosecond switching in   magnetic tunnel junctions
  We have obtained microscopic evidence of the influence of domain wall stray fields on the nanosecond magnetization switching in magnetic trilayer systems. The nucleation barrier initiating the magnetic switching of the soft magnetic Fe20Ni80 layer in magnetic tunnel junction-like FeNi/Al2O3/Co trilayers is considerably lowered by stray fields generated by domain walls present in the hard magnetic Co layer. This internal bias field can significantly increase the local switching speed of the soft layer. The effect is visualized using nanosecond time- and layer-resolved magnetic domain imaging and confirmed by micromagnetic simulations. 
Jan Vogel (LLN), Wolfgang Kuch (MPI Halle, FU Berlin), Riccardo Hertel   (IFF), Julio Camarero (UAM Madrid), Keiki Fukumoto ...