Coulomb effects and hopping transport in granular metals
  We investigate effects of Coulomb interaction and hopping transport in the insulator phase of granular metals and quantum dot arrays. We consider a spatially periodic as well as an irregular array, including disorder in a form of a random on-site electrostatic potential. We study the Mott transition between the insulating and metallic states in the regular system and find the dependence of the Mott gap upon the intergranular coupling. The conductivity of a strictly periodic array has an activation form with the Mott gap as an activation energy. Considering irregular systems we concentrate on the transport properties in the dielectric, low coupling limit and derive the Efros-Shklovskii law for hopping conductivity. In the irregular arrays electrostatic disorder results in the finite density of states on the Fermi level giving rise to the variable range hopping mechanism. We develop a theory of tunneling through a chain of grains and discuss in detail both elastic and inelastic cotunneling mechanisms; the former dominates at very low temperatures and/or very low applied electric fields, while the inelastic mechanism controls tunneling at high temperature/fields. Our results are obtained within the framework of the new technique based on the mapping of quantum electronic problem onto the classical gas of Coulomb charges. The processes of quantum tunnelling of real electrons are represented in this technique as trajectories (world lines) of charged classical particles in $d+1$ dimensions. The Mott gap is related to the dielectric susceptibility of the Coulomb gas in the direction of the imaginary time axis. 
I.S. Beloborodov, A.V. Lopatin, V.M. Vinokur