Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by   in-situ method
  MgB2 thin films were deposited on SiC buffered Si substrates by sequential electron beam evaporation of B-Mg bilayer followed by in-situ annealing. The application of a SiC buffer layer enables the maximum annealing temperature of 830 C. The Transmission Electron Microscopy analysis confirms the growth of a nanogranular MgB2 film and the presence of a Mg2Si compound at the surface of the film. The 150-200 nm thick films show a maximum zero resistance critical temperature TC0 above 37 K and a critical current density JC ~ 106 A/cm2 at 11K. 
S. Chromik, J. Huran, V. Strbik, M. Spankova, I. Vavra, W. Bohne, J.   Rohrich, E. Strub, P. Kovac and S. Stancek