Observation of spin-transfer switching in deep submicron-sized and   low-resistance magnetic tunnel junctions
  The spin-transfer effect has been studied in magnetic tunnel junctions (PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe) with dimensions down to 0.1x0.2 um2 and resistance-area product RA in the range of 0.5-10 Ohm m2 (dR/R=1-20%). Current-induced magnetization switching is observed with a critical current density of about 8e6 A/cm2. The attribution of the switching to the spin-transfer effect is supported by a current-induced dR/R value identical to the one obtained from the R versus H measurements. Furthermore, the critical switching current density has clear dependence on the applied magnetic field, consistent with what has been observed previously in the case of spin-transfer induced switching in metallic multilayer systems. 
Yiming Huai, Frank Albert, Paul Nguyen, Mahendra Pakala, and Thierry   Valet