Orbital Disordering and metal-insulator transition with hole-doping in   perovskite-type vanadium oxides
  Filling-control metal-insulator transitions (MITs) and related electronic phase diagrams have been investigated for hole-doped vanadium oxides, Pr_{1-x}Ca_xVO_3, Nd_{1-x}Sr_xVO_3 and Y_{1-x}Ca_xVO_3, with perovskite structure. The increase of the doping level x causes the melting of the G-type (and C-type) orbital order, prior to or concomitantly with the MIT, due partly to the doped-hole motion and partly to the ramdom potential arising from the quenched disorder. In particular, the G-type spin- and C-type orbital-ordered phase present in Y_{1-x}Ca_xVO_3 disappears immediately upon hole doping, around x=0.02. On the other hand, the critical doping level x for MIT is governed by the electron-correlation strength of the undoped parent compound. 
J. Fujioka, S. Miyasaka, and Y. Tokura