Mobility gap in intermediate valent TmSe
  The infrared optical conductivity of intermediate valence compound TmSe reveals clear signatures for hybridization of light $d$- and heavy f-electronic states with m* ~ 1.6 m_0 and m* ~ 16 m_0, respectively. At moderate and high temperatures, the metal-like character of the heavy carriers dominate the low-frequency response while at low temperatures (T_N < T < 100 K) a gap-like feature is observed in the conductivity spectra below 10 meV which is assigned to be a mobility gap due to localization of electrons on local Kondo singlets, rather than a hybridization gap in the density of states. 
M. Dumm, B. Gorshunov, M. Dressel, and T. Matsumura