Spatial Imaging and Mechanical Control of Spin Coherence in Strained   GaAs Epilayers
  The effect of uniaxial tensile strain on spin coherence in n-type GaAs epilayers is probed using time-resolved Kerr rotation, photoluminescence, and optically-detected nuclear magnetic resonance spectroscopies. The bandgap, electron spin lifetime, electron g-factor, and nuclear quadrupole splitting are simultaneously imaged over millimeter scale areas of the epilayers for continuously varying values of strain. All-optical nuclear magnetic resonance techniques allow access to the strain induced nuclear quadrupolar resonance splitting in field regimes not easily addressable using conventional optically-detected nuclear magnetic resonance. 
H. Knotz, A. W. Holleitner, J. Stephens, R. C. Myers, and D. D.   Awschalom