Direct Observation of Site-specific Valence Electronic Structure at   Interface: SiO2/Si Interface
  Atom specific valence electronic structures at interface are elucidated successfully using soft x-ray absorption and emission spectroscopy. In order to demonstrate the versatility of this method, we investigated SiO2/Si interface as a prototype and directly observed valence electronic states projected at the particular atoms of the SiO2/Si interface; local electronic structure strongly depends on the chemical states of each atom. In addition we compared the experimental results with first-principle calculations, which quantitatively revealed the interfacial properties in atomic-scale. 
Y. Yamashita, S. Yamamoto, K. Mukai, J. Yoshinobu, Y. Harada,   T.Tokushima,2T. Takeuchi,2 Y. Takata, S. Shin, K. Akagi and ...