Tunable effective g-factor in InAs nanowire quantum dots
  We report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystal structure grown by chemical beam epitaxy. The values of the electron g-factors of the first few electrons entering the dot are found to strongly depend on dot size and range from close to the InAs bulk value in large dots |g^*|=13 down to |g^*|=2.3 for the smallest dots. These findings are discussed in view of a simple model. 
M. T. Bj\"ork, A. Fuhrer, A. E. Hansen, M. W. Larsson, L. E. Jensen,   L. Samuelson