Stochastic current switching in bistable resonant tunneling systems
  Current-voltage characteristics of resonant-tunneling structures often exhibit intrinsic bistabilities. In the bistable region of the I-V curve one of the two current states is metastable. The system switches from the metastable state to the stable one at a random moment in time. The mean switching time \tau depends exponentially on the bias measured from the boundary of the bistable region V_{th}. We find full expressions for \tau (including prefactors) as functions of bias, sample geometry, and in-plane conductivity. Our results take universal form upon appropriate renormalization of the threshold voltage V_{th}. We also show that in large samples the switching initiates inside, at the edge, or at a corner of the sample depending on the parameters of the system. 
O. A. Tretiakov, K. A. Matveev