Spin injection from the Heusler alloy Co_2MnGe into Al_0.1Ga_0.9As/GaAs   heterostructures
  Electrical spin injection from the Heusler alloy Co_2MnGe into a p-i-n Al_0.1Ga_0.9As/GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of heterostructures. The injected spin polarization at 2 K is calculated to be 27% based on a calibration of the spin detector using Hanle effect measurements. Although the dependence on electrical bias conditions is qualitatively similar to Fe-based spin injection devices of the same design, the spin polarization injected from Co_2MnGe decays more rapidly with increasing temperature. 
X.Y. Dong, C. Adelmann, J.Q. Xie, C.J. Palmstrom, X. Lou, J. Strand,   P.A. Crowell, J.-P. Barnes, A.K. Petford-Long