Reply to Comment (cond-mat/0311174)
  We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree quantitatively with theory of interaction corrections in the ballistic regime, T\tau >1. Our comparison does not involve any fitting parameters. 
V.M. Pudalov, M.E. Gershenson, H. Kojima, G. Brunthaler, and G. Bauer