Planar Ion Trap Geometry for Microfabrication
  We describe a novel high aspect ratio radiofrequency linear ion trap geometry that is amenable to modern microfabrication techniques. The ion trap electrode structure consists of a pair of stacked conducting cantilevers resulting in confining fields that take the form of fringe fields from parallel plate capacitors. The confining potentials are modeled both analytically and numerically. This ion trap geometry may form the basis for large scale quantum computers or parallel quadrupole mass spectrometers.   PACS: 39.25.+k, 03.67.Lx, 07.75.+h, 07.10+Cm 
M. J. Madsen, W. K. Hensinger, D. Stick, J. A. Rabchuk, and C. Monroe