Crossover from tunneling to incoherent (bulk) transport in a correlated   nanostructure
  We calculate the junction resistance for a metal-barrier-metal device with the barrier tuned to lie just on the insulating side of the metal-insulator transition. We find that the crossover from tunneling behavior in thin barriers at low temperature to incoherent transport in thick barriers at higher temperature is governed by a generalized Thouless energy. The crossover temperature can be estimated from the low temperature resistance of the device and the bulk density of states of the barrier. 
J. K. Freericks (Georgetown University)