Magnetoresistance of a semiconducting magnetic wire with domain wall
  We investigate theoretically the influence of the spin-orbit interaction of Rashba type on the magnetoresistance of a semiconducting ferromagnetic nanostructure with a laterally constrained domain wall. The domain wall is assumed sharp (on the scale of the Fermi wave length of the charge carriers). It is shown that the magnetoresistance in such a case can be considerably large, which is in a qualitative agreement with recent experimental observations. It is also shown that spin-orbit interaction may result in an increase of the magnetoresistance. The role of localization corrections is also briefly discussed. 
V. K. Dugaev, J. Barnas, J. Berakdar, V. I. Ivanov, W. Dobrowolski, V.   F. Mitin