Tunneling Anisotropic Magnetoresistance: A spin-valve like tunnel   magnetoresistance using a single magnetic layer
  We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal/insulator/ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the anisotropic density of states in (Ga,Mn)As with respect to the magnetization direction, and the two-step magnetization reversal process in this material. 
C. Gould (1), C. R\"uster (1), T. Jungwirth (2,3,4), E. Girgis (1), G.   M. Schott (1), R. Giraud (1), K. Brunner (1), G. Sc...