High-Performance Carbon Nanotube Transistors on SrTiO3/Si Substrates
  Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3 as gate dielectric and Si as gate electrode. The transconductance per channel width is 8900 S/m. The high transconductance cannot be explained by the increased gate capacitance; it is proposed that the increased electric field at the nanotube-electrode interface due to the high-kappa SrTiO3 decreases or eliminates the nanotube-electrode Schottky barrier. 
B. M. Kim, T. Brintlinger, E. Cobas, Haimei Zheng, and M. S. Fuhrer   (University of Maryland, College Park) Z. Yu, R. Droop...