Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor   (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction
  Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular 1.5 x 0.3 um^2 device revealed that magnetization switching occurs at low critical current densities of 1.1 - 2.2 x 10^5 A/cm^2 despite the presence of spin-orbit interaction in the p-type semiconductor system. Possible mechanisms responsible for the effect are discussed. 
D. Chiba, Y. Sato, T. Kita, F. Matsukura, and H. Ohno