Fractal Self-Assembled Nanostructures on Monocrystalline Silicon Surface
  We present ultra-shallow diffusion profiles performed by short-time diffusion of boron from the gas phase using controlled surface injection of self-interstitials and vacancies into the n-type Si(100) wafers. The diffusion profiles of this art are found to consist of both longitudinal and lateral silicon quantum wells of the p-type that are self-assembled between the alloys of microdefects, which are produced by previous oxidation. These alloys appear to be passivated during short-time diffusion of boron thereby forming neutral del'ta barriers. The fractal type self-assembly of microdefects is found to be created by varying the thickness of the oxide overlayer, which causes the system of microcavities embedded in the quantum well plane. 
N.T. Bagraev, A.D. Bouravleuv, W. Gehlhoff, L.E. Klyachkin, A.M.   Malyarenko, V.V. Romanov and S.A. Rykov