Recombination and Lifetimes of Charge Carriers in Semiconductors
  In this Communication, it is shown that models used for describing generation and recombination of electrons and holes lead to disagreements with Maxwell's electrodynamics. Self-consistent expressions, more adequately depicting the actual physical processes of electron-hole recombination in semiconductors are obtained. It is shown that the electron and hole lifetimes can be defined correctly only for the special cases when the electron and hole nonequilibrium concentrations are the same, these lifetimes being equal. The influence of temperature inhomogeneity on the recombination is also considered. The recombination rate for hot electrons is obtained in the case when the electron and hole temperatures differ. 
I. N. Volovichev, G. N. Logvinov, O. Yu. Titov, Yu. G. Gurevich