Fabrication of GaNxAs1-x Quantum Structures by Focused Ion Beam   Patterning
  A novel approach to the fabrication of GaNxAs1-x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice of an MBE-grown GaNxAs1-x film by amorphization through ion implantation followed by regrowth upon rapid thermal annealing (RTA). Amorphization may be achieved with a focused ion beam (FIB), which is used to implant Ga ions in patterned lines such that annealing produces GaAs regions within a GaNxAs1-x film. The profiles of these amorphized lines are dependent upon the dose implanted, and the film reaches a damage threshold during RTA due to excess Ga. By altering the FIB implantation pattern, quantum dots or wires may be fabricated. 
K. Alberi, A. Minor, M.A. Scarpulla, S.J. Chung, D.E. Mars, K.M. Yu,   W. Walukiewicz and O.D. Dubon