Numerical evaluation of the dipole-scattering model for the   metal-insulator transition in gated high mobility Silicon inversion layers
  The dipole trap model is able to explain the main properties of the apparent metal-to-insulator transition in gated high mobility Si-inversion layers. Our numerical calculations are compared with previous analytical ones and the assumptions of the model are discussed carefully. In general we find a similar behavior but include further details in the calculation. The calculated strong density dependence of the resistivity is not yet in full agreement with the experiment. 
T. H\"ormann and G. Brunthaler