Charge transport through a SET with a mechanically oscillating island
  We consider a single-electron transistor (SET) whose central island is a nanomechanical oscillator. The gate capacitance of the SET depends on the mechanical displacement, thus, the vibrations of the island vibrations may strongly influence the current-voltage characteristics, current noise, and higher cumulants of the current. Harmonic oscillations of the island and oscillations with random amplitude (e.g., due to the thermal activation) change the transport characteristics in a different way. The noise spectrum has a peak at the frequency of the island oscillations; when the island oscillates harmonically, the peak reduces to a $\delta$-peak. We show that knowledge of the SET transport properties helps to determine in what way the island oscillates, to estimate the amplitude, and the frequency of the oscillations. 
N.M. Chtchelkatchev, W. Belzig, and C. Bruder