On the energetic origin of self-limiting trenches formed around Ge/Si   quantum dots
  At high growth temperatures, the misfit strain at the boundary of Ge quantum dots on Si(001) is relieved by formation of trenches around the base of the islands. The depth of the trenches has been observed to saturate at a level that depends on the base-width of the islands. Using finite element simulations, we show that the self-limiting nature of trench depth is due to a competition between the elastic relaxation energy gained by the formation of the trench and the surface energy cost for creating the trench. Our simulations predict a linear increase of the trench depth with the island radius, in quantitative agreement with the experimental observations of Drucker and coworkers. 
D. T. Tambe and V. B. Shenoy