Carrier Concentration Dependencies of Magnetization & Transport in   Ga1-xMnxAs1-yTey
  We have investigated the transport and magnetization characteristics of Ga1-xMnxAs intentionally compensated with shallow Te donors. Using ion implantation followed by pulsed-laser melting, we vary the Te compensation and drive the system through a metal-insulator transition (MIT). This MIT is associated with enhanced low-temperature magnetization and an evolution from concave to convex temperature-dependent magnetization. 
M.A. Scarpulla, K.M. Yu, W. Walukiewicz and O.D. Dubon