Tunneling in mesoscopic junctions
  We have applied the Numerical Renormalization Group method to study a mesoscopic system consisting of two samples of metal separated by an insulating barrier, with nanometer dimensions, which allows the tunnelling of a single electron from one to the other side of the junction. The junction is represented by a generalized orthodox model, taking into account the electronic scattering interaction due the hole and the tunnelling electrons, localized in the source and in the drain electrode, respectively. We have calculated the static properties (charge transference, charge average, quadractic charge average and specific heat) and the electric conductivity of the junction, for the model parameters given by the tunneling matrices element, the barrier energy and by the electronic scattering potentials acting on the electrons of the left(right) electrode. 
H. O. Frota