Anisotropic lattice deformation of InAs self-assembled quantum dots   embedded in GaNAs strain compensating layers
  Lattice deformations of InAs self-assembled quantum dots, which were grown on (001) GaAs substrates and embedded in GaNAs strain compensating layers (SCLs), were examined with an ion-channeling method in Rutherford backscattering spectrometry. The channeling experiments demonstrated that the increase of the nitrogen concentrations in the GaNAs SCLs caused the indium lattice displacements along the [001] growth direction while those parallel to the (001) crystal plane were kept unchanged 
Naoki Matsumura, Shunichi Muto, Sasilaka Ganapathy, Ikuo Suemune, Ken   Numata and Konami Yabuta