Spin injection and detection by resonant tunneling structure
  A theory of spin-dependent electron transmission through resonant tunneling diode (RTD) grown of non-centrosymmetrical semiconductor compounds has been presented. It has been shown that RTD can be employed for injection and detection of spin-polarized carriers: (i) electric current flow in the interface plane leads to spin polarization of the transmitted carriers, (ii) transmission of the spin-polarized carriers through the RTD is accompanied by generation of an in-plane electric current. The microscopic origin of the effects is the spin-orbit coupling-induced splitting of the resonant level. 
M.M. Glazov, S.A. Tarasenko, P.S. Alekseev, M.A. Odnoblyudov, V.M.   Chistyakov, and I.N. Yassievich