Field-Induced Resistive Switching in Metal-Oxide Interfaces
  We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a deposited metal electrode and the oxide. We determine through impedance spectroscopy that the interfacial layer is no thicker than 10 nm and that the switch is accompanied by a small capacitance increase associated with charge accumulation. Based on interfacial I-V characterization and measurement of the temperature dependence of the resistance, we propose that a field-created crystalline defect mechanism, which is controllable for devices, drives the switch. 
S. Tsui (1), A. Baikalov (1), J. Cmaidalka (1), Y. Y. Sun (1), Y. Q.   Wang (1), Y. Y. Xue (1), C. W. Chu (1,2,3), L. Chen (...