Spin accumulation in forward-biased MnAs/GaAs Schottky diodes
  We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the metal/semiconductor interface of forward-biased ferromagnetic Schottky diodes, which is consistent with a theory of spin-dependent reflection off the interface. Spatiotemporal Kerr microscopy is used to image the electron spin and the resulting dynamic nuclear polarization that arises from the non equilibrium carrier polarization. 
J. Stephens, J. Berezovsky, J. P. McGuire, L. J. Sham, A. C. Gossard,   and D. D. Awschalom