Doping a Mott Insulator: Physics of High Temperature Superconductivity
  This article reviews the effort to understand the physics of high temperature superconductors from the point of view of doping a Mott insulator. The basic electronic structure of the cuprates is reviewed, emphasizing the physics of strong correlation and establishing the model of a doped Mott insulator as a starting point. A variety of experiments are discussed, focusing on the region of the phase diagram close to the Mott insulator (the underdoped region) where the behavior is most anomalous. We introduce Anderson's idea of the resonating valence bond (RVB) and argue that it gives a qualitative account of the data. The importance of phase fluctuation is discussed, leading to a theory of the transition temperature which is driven by phase fluctuation and thermal excitation of quasiparticles. We then describe the numerical method of projected wavefunction which turns out to be a very useful technique to implement the strong correlation constraint, and leads to a number of predictions which are in agreement with experiments. The remainder of the paper deals with an analytic treatment of the t-J model, with the goal of putting the RVB idea on a more formal footing. The slave-boson is introduced to enforce the constraint of no double occupation. The implementation of the local constraint leads naturally to gauge theories. We give a rather thorough discussion of the role of gauge theory in describing the spin liquid phase of the undoped Mott insulator. We next describe the extension of the SU(2) formulation to nonzero doping. We show that inclusion of gauge fluctuation provides a reasonable description of the pseudogap phase. 
Patrick A. Lee, Naoto Nagaosa, Xiao-Gang Wen