Large tunneling anisotropic magnetoresistance in (Ga,Mn)As   nanoconstrictions
  We report a large tunneling anisotropic magnetoresistance (TAMR) in a thin (Ga,Mn)As epilayer with lateral nanoconstrictions. The observation establishes the generic nature of this effect, which originates from the spin-orbit coupling in a ferromagnet and is not specific to a particular tunnel device design. The lateral geometry allows us to link directly normal anisotropic magnetoresistance (AMR) and TAMR. This indicates that TAMR may be observable in other materials showing a comparable AMR at room temperature, such as transition metal alloys. 
A.D. Giddings, M.N. Khalid, J. Wunderlich, S. Yasin, R.P. Campion,   K.W. Edmonds, J. Sinova, T. Jungwirth, K. Ito, K. Y. Wa...