Chiral Symmetry Breaking and the Quantum Hall Effect in Monolayer   Graphene
  Monolayer graphene in a strong magnetic field exhibits quantum Hall states at filling fractions $\nu = 0$ and $\nu = \pm 1$ that are not explained within a picture of noninteracting electrons. We propose that these states arise from interaction-induced chiral symmetry-breaking orders. We argue that when the chemical potential is at the Dirac point, weak on-site repulsion supports an easy-plane antiferromagnet state, which simultaneously gives rise to ferromagnetism oriented parallel to the magnetic field direction, whereas for $|\nu|=1$ easy-axis antiferromagnet and charge-density-wave orders coexist. We perform self-consistent calculations of the magnetic field dependence of the activation gap for the $\nu = 0$ and $|\nu| = 1$ states and obtain excellent agreement with recent experimental results. Implications of our study for fractional Hall states in monolayer graphene are highlighted. 
Bitan Roy, Malcolm P. Kennett, S. Das Sarma
cond-mat.mes-hall cond-mat.str-el hep-th