Multiscale model for phonon-assisted band-to-band tunneling in   semiconductors
  We present a TCAD compatible multiscale model of phonon-assisted band-to-band tunneling (BTBT) in semiconductors, that incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture the measured current-voltage data in silicon, for current transport along the $[100]$, $[110]$ and $[111]$ directions. Our model will be useful to predict band-to-band tunneling phenomena to quantify on and off currents in Tunnel FETs and in small geometry MOSFETs and FINFETs. 
Arvind Ajoy, S. E. Laux, Kota V.R.M. Murali and S. Karmalkar
cond-mat.mes-hall