Transforming a Surface State of Topological Insulator by a Bi Capping   Layer
  We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong electron hybridization. These new states play the role of topological surface states keeping the bulk topological nature intact. This mechanism provides a way to create various different types of topologically protected electron channels on top of a single topological insulator, possibly with tailored properties for various applications. 
Han Woong Yeom, Sung Hwan Kim, Woo Jong Shin, Kyung-Hwan Jin, Joonbum   Park, Tae-Hwan Kim, Jun Sung Kim, Hirotaka Ishikawa,...
cond-mat.mes-hall