Compact Stabilized Semiconductor Laser for Frequency Metrology
  We report on the development of a frequency modulatable 795 nm semiconductor laser based on self-injection locking to a high quality factor whispering gallery mode microresonator. The laser is characterized with residual amplitude modulation below -80 dB and frequency noise better than 300 Hz/Hz^(1/2) at offset frequencies ranging from 100 Hz to 10 MHz. The frequency modulation (FM) speed and span of the laser exceed 1 MHz and 4 GHz, respectively. Locking of the laser to Doppler-free saturated absorption resonance of 87Rb D1 line is demonstrated and frequency stability below 10^(-12) is measured for integration time spanning from 1 s to 1 day. The architecture demonstrated in this study is suitable for realization of frequency modulatable lasers at any wavelength. 
W. Liang, V. S. Ilchenko, D. Eliyahu, E. Dale, A. A. Savchenkov, D.   Seidel, A. B. Matsko, and L. Maleki
physics.optics