Properties of group-IV-based ferromagnetic semiconductor GeFe: Growth   temperature dependence, lattice constant, location of Fe atoms, and their   relevance to the magnetic properties
  We report the growth temperature dependence of the properties of the group-IV-based ferromagnetic semiconductor Ge1-xFex films (x = 6.5% and 10.5%), including the lattice constant, Curie temperature (TC), and Fe-atom locations. While TC strongly depends on the growth temperature, we find a universal relationship between TC and the lattice constant, which does not depend on the Fe content x. By using the channeling Rutherford backscattering and particle-induced X-ray emission measurements, it is clarified that about 15% of the Fe atoms exist in the tetrahedral interstitial sites in the Ge0.935Fe0.065 lattice and that the substitutional Fe concentration is not correlated with TC. Considering these results, we suggest that the non-uniformity of the Fe concentration plays an important role in determining the ferromagnetic properties of GeFe. 
Yuki Wakabayashi, Shinobu Ohya, Yoshisuke Ban, and Masaaki Tanaka
cond-mat.mtrl-sci