Model for quantum efficiency of guided mode plasmonic enhanced silicon   Schottky detectors
  Plasmonic enhanced Schottky detectors operating on the basis of the internal photoemission process are becoming an attractive choice for detecting photons with sub bandgap energy. Yet, the quantum efficiency of these detectors appears to be low compare to the more conventional detectors which are based on interband transitions in a semiconductor. Hereby we provide a theoretical model to predict the quantum efficiency of guided mode internal photoemission photodetector with focus on the platform of silicon plasmonics. The model is supported by numerical simulations and comparison to experimental results. Finally, we discuss approaches for further enhancement of the quantum efficiency. 
Ilya Goykhman, Boris Desiatov, Joseph Shappir, Jacob B. Khurgin, Uriel   Levy
physics.optics cond-mat.mes-hall