Nano-artifact metrics based on random collapse of resist
  Artifact metrics is an information security technology that uses the intrinsic characteristics of a physical object for authentication and clone resistance. Here, we demonstrate nano-artifact metrics based on silicon nanostructures formed via an array of resist pillars that randomly collapse when exposed to electron-beam lithography. The proposed technique uses conventional and scalable lithography processes, and because of the random collapse of resist, the resultant structure has extremely fine-scale morphology with a minimum dimension below 10 nm, which is less than the resolution of current lithography capabilities. By evaluating false match, false non-match and clone-resistance rates, we clarify that the nanostructured patterns based on resist collapse satisfy the requirements for high-performance security applications. 
Tsutomu Matsumoto, Morihisa Hoga, Yasuyuki Ohyagi, Mikio Ishikawa,   Makoto Naruse, Kenta Hanaki, Ryosuke Suzuki, Daiki Seki...
cs.CR cond-mat.mes-hall cs.ET