Intrinsic magnetoresistance in metal films on ferromagnetic insulators
  We predict a magnetoresistance induced by the interfacial Rashba spin-orbit coupling in normal metal|ferromagnetic insulator bilayer. It depends on the angle between current and magnetization directions identically to the "spin Hall magnetoresistance" mechanism caused by a combined action of spin Hall and inverse spin Hall effects. Due to the identical phenomenology it is not obvious whether the magnetoresistance reported by Nakayama et al. is a bulk metal or interface effect. The interfacial Rashba induced magnetoresistance may be distinguished from the bulk metal spin Hall magnetoresistance by its dependence on the metal film thickness. 
Vahram L. Grigoryan, Wei Guo, Gerrit E. W. Bauer, and Jiang Xiao
cond-mat.mes-hall