Observation of microwave-induced resistance oscillations in strained   Ge/SiGe quantum wells
  Microwave-induced resistance oscillations (MIRO) have been extensively studied for more than a decade but, until now, have remained unique to GaAs/AlGaAs-based 2D electron systems. Here, we report on the first observation of MIRO in a 2D hole gas hosted in Ge/SiGe quantum well. Our findings confirm that MIRO is a universal phenomenon and demonstrate that microwave photoresistance can be utilized to probe the energy spectrum and the correlation effects of 2D holes in Ge/SiGe quantum wells. 
M. A. Zudov, O. A. Mironov, Q. A. Ebner, P. D. Martin, Q. Shi, and D.   R. Leadley
cond-mat.mes-hall