Experimental determination of Rashba spin-orbit coupling in wurtzite   $n$-GaN:Si
  Millikelvin magnetotransport studies are carried out on heavily $n$-doped wurtzite GaN:Si films grown on semi-insulating GaN:Mn buffer layers by metal-organic vapor phase epitaxy. The dependency of the conductivity on magnetic field and temperature is interpreted in terms of theories that take into account disorder-induced quantum interference of one-electron and many-electron self-crossing trajectories. The Rashba parameter $\alpha_{\text{R}}\,=\,(4.5 \pm 1)$ meV$\AA$ is determined, and it is shown that in the previous studies of electrons adjacent to GaN/(Al,Ga)N interfaces, bulk inversion asymmetry was dominant over structural inversion asymmetry. The comparison of experimental and theoretical values of $\alpha_{\text{R}}$ across a series of wurtzite semiconductors is presented as a test of current relativistic ab initio computation schemes. It is found that electron-electron scattering with small energy transfer accounts for low temperature decoherence in these systems. 
W. Stefanowicz, R. Adhikari, T. Andrearczyk, B. Faina, M. Sawicki, J.   A. Majewski, T. Dietl and A. Bonanni
cond-mat.mes-hall cond-mat.mtrl-sci