Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based   on ferroelectric resistive switching targeting high-density information   storage in nonvolatile memories
  We demonstrate the feasibility of multilevel recording in Pt/Bi(1-d)FeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi(1-d)FeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi(1-d)FeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory. 
David Jim\'enez, Enrique Miranda, Atsushi Tsurumaki-Fukuchi, Hiroyuki   Yamada, Jordi Su\~n\'e and Akihito Sawa
cond-mat.mes-hall cond-mat.mtrl-sci