The suppression of Curie temperature by Sr doping in diluted   ferromagnetic semiconductor (La1-xSrx)(Zn1-yMny)AsO
  (La1-xSrx)(Zn1-yMny)AsO is a two dimensional diluted ferromagnetic semiconductor that has the advantage of decoupled charge and spin doping. The substitution of Sr2+ for La3+ and Mn2+ for Zn2+ into the parent semiconductor LaZnAsO introduces hole carriers and spins, respectively. This advantage enables us to investigate the influence of carrier doping on the ferromagnetic ordered state through the control of Sr concentrations in (La1-xSrx)(Zn0.9Mn0.1)AsO. 10 % Sr doping results in a ferromagnetic ordering below TC ~ 30 K. Increasing Sr concentration up to 30 % heavily suppresses the Curie temperature and saturation moments. Neutron scattering measurements indicate that no structural transition occurs for (La0.9Sr0.1)(Zn0.9Mn0.1)AsO below 300 K. 
Cui Ding, Xin Gong, Huiyuan Man, Guoxiang Zhi, Shengli Guo, Yang Zhao,   Hangdong Wang, Bin Chen and F.L. Ning
cond-mat.mtrl-sci cond-mat.str-el