Theory of strain tunning exction coupling in self-assembled InAs/GaAs   quantum dots
  We derive analytically the change of exciton fine structure splitting (FSS) under the external stresses in the self-assembled InAs/GaAs quantum dots using the Bir-Pikus model. We find that the FSS change is mainly due to the strain induced valence bands mixing and valence-conduction band coupling. The exciton polarization angle under strain are determined by the argument of the electron-hole off-diagonal exchange integrals. The theory agrees well with the empirical pseudopotential calculations. 
Jianping Wang, Guang-Can Guo, Lixin He
cond-mat.mtrl-sci cond-mat.mes-hall