Direct comparison of graphene devices before and after transfer to   different substrates
  The entire graphene field-effect-transistor (FET) devices first fabricated on SiO2/Si are peeled from the surface and placed on a different wafer. Both longitudinal and transverse resistivity measurements of the devices before and after the transfer are measured to calculate the mobility for a direct comparison. After transferred to different SiO2/Si wafers, the mobility generally is comparable and the defect density does not show any significant increase, which indicates the degradation due to the transfer process itself is minimal. The same method can be applied to transfer graphene devices to any arbitrary substrates (e.g. SrTiO3 or STO). The transfer method developed here not only eliminates the need to locate single-layer graphene on non-SiO2/Si substrates for patterning, but also provides a convenient way to study the effects of various substrates on graphene electronic properties. 
Raymond Sachs, Zhisheng Lin, Patrick Odenthal, Roland Kawakami, and   Jing Shi
cond-mat.mes-hall