Visible light enhanced field effect at LaAlO3/SrTiO3 interface
  Electrical field and light-illumination have been two most widely used stimuli in tuning the conductivity of semiconductor devices. Via capacitive effect electrical field modifies the carrier density of the devices, while light-illumination generates extra carriers by exciting trapped electrons into conduction band1. Here, we report on an unexpected light illumination enhanced field effect in a quasi-two-dimensional electron gas (q2DEG) confined at the LaAlO3/SrTiO3 (LAO/STO) interface which has been the focus of emergent phenomenon exploration2-14. We found that light illumination greatly accelerates and amplifies the field effect, driving the field-induced resistance growth which originally lasts for thousands of seconds into an abrupt resistance jump more than two orders of magnitude. Also, the field-induced change in carrier density is much larger than that expected from the capacitive effect, and can even be opposite to the conventional photoelectric effect. This work expands the space for novel effect exploration and multifunctional device design at complex oxide interfaces. 
Y. Lei, Y. Z. Chen, Y. W. Xie, Y. Li, Y. S. Chen, S. H. Wang, J. Wang,   B. G. Shen, N. Pryds, H. Y. Hwang, and J. R. Sun
cond-mat.mtrl-sci cond-mat.str-el