Picosecond switching of high voltage reverse-biased p+-n-n+-structures   into conductive state by pulsed lighting
  An analytical theory of high voltage reverse-biased p+-n-n+-structures picosecond switching into conducting state by pulsed lighting has been developed and a numerical simulation of this process has been performed. Combining the results of theory and simulation allowed us to obtain a simple relation between the parameters of structure, light pulse, external circuit and main characteristics of the process - the load current pulse amplitude and duration of switching process. 
A. S. Kyuregyan
cond-mat.other