Galvanomagnetic effects and manipulation of antiferromagnetic   interfacial uncompensated magnetic moment in exchange-biased bilayers
  In this work, IrMn$_{3}$/insulating-Y$_{3}$Fe$_{5}$O$_{12}$ exchange-biased bilayers are studied. The behavior of the net magnetic moment $\Delta m_{AFM}$ in the antiferromagnet is directly probed by anomalous and planar Hall effects, and anisotropic magnetoresistance. The $\Delta m_{AFM}$ is proved to come from the interfacial uncompensated magnetic moment. We demonstrate that the exchange bias and rotational hysteresis are induced by the irreversible switching of the $\Delta m_{AFM}$. In the training effect, the $\Delta m_{AFM}$ changes continuously. This work highlights the fundamental role of the $\Delta m_{AFM}$ in the exchange bias and facilitates the manipulation of antiferromagnetic spintronic devices. 
X. Zhou, L. Ma, Z. Shi, W. J. Fan, R. F. L. Evans, R. W. Chantrell, S.   Mangin, H. W. Zhang, and S. M. Zhou
cond-mat.mtrl-sci