Imaging and registration of buried atomic-precision donor devices using   scanning capacitance microscopy
  We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling microscopy (STM) lithography technique. A critical challenge in completing atomic-precision nanoelectronic devices is to accurately align mesoscopic metal contacts to the STM defined nanostructures. Utilizing the SCMs ability to image buried dopant nanostructures, we have developed a technique by which we are able to position metal electrodes on the surface to form contacts to underlying STM fabricated donor nanostructures with a measured accuracy of 300 nm. Low temperature (T=4K) transport measurements confirm successful placement of the contacts to the donor nanostructures. 
E. Bussmann, M. Rudolph, G. S. Subramania, S. Misra, S.M. Carr, E.   Langlois, J. Dominguez, T. Pluym, M.P. Lilly, and M.S. ...
cond-mat.mtrl-sci