Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault   Density in InAs Nanowires Grown on Silicon
  We report the growth of InAs$_{1-x}$Sb$_{x}$ nanowires ($0\leq x \leq 0.15$) grown by catalyst-free molecular beam epitaxy on silicon (111) substrates. We observed a sharp decrease of stacking fault density in the InAs$_{1-x}$Sb$_{x}$ nanowire crystal structure with increasing antimony content. This decrease leads to a significant increase in the field-effect mobility, this being more than three times greater at room temperature for InAs$_{0.85}$Sb$_{0.15}$ nanowires than InAs nanowires. 
Marion J. L. Sourribes and Ivan Isakov and Marina Panfilova and Huiyun   Liu and Paul A. Warburton
cond-mat.mtrl-sci