Energy renormalization and Mott transition in n-GaAs and n-GaN
  In this paper, we investigate renormalization of charge carrier effective masses and bandgap narrowing in n-GaAs and wurtzite-type n-GaN over a wide range of temperatures and dopant concentrations. The calculations are based on the Green's function formalism. Contrary to the previous works, we consider the regions below as well as above the Mott transition. Special attention is paid to formation of donor subband and condition for the Mott transition. We also take into account the effects caused by optical phonons. The latter strongly depend on the doping level because of dynamic screening. It is shown that three specific doping levels may be set off in n-GaN. They correspond to 1) Mott transition, 2) resonance amplification of optical phonon-plasmon, and 3) full dynamic screening of optical phonons, respectively. Contrary to the case of n-GaN, the effect of full dynamic screening cannot be implemented in n-GaAs because of stronger nonparabolicity of conduction band. 
P. N. Romanets and A. V. Sachenko
cond-mat.mtrl-sci cond-mat.mes-hall