Oxygen vacancy and EC - 1 eV electron trap in ZnO
  Fourier transform deep level transient spectroscopy has been performed between 80 K and 550 K in five n-type ZnO samples grown by different techniques. The capture cross section and ionization energy of four electron traps have been deduced from Arrhenius diagrams. A trap 1 eV below the conduction band edge is systematically observed in the five samples with a large apparent capture cross section for electrons (1.6 $\pm$ 0.4 x 10 - 13 cm2) indicating a donor character. The assignment of this deep level to the oxygen vacancy is discussed on the basis of available theoretical predictions. 
Gauthier Chicot (NEEL), Pierre Muret (NEEL), Julien Pernot (NEEL,   IUF), J.L. Santailler (LETI), Guy Feuillet (LETI)
cond-mat.mtrl-sci