Combined study of microwave-power/linear-polarization dependence of the   microwave-radiation-induced magnetoresistance oscillations in GaAs/AlGaAs   devices
  We report the results of a combined microwave polarization-dependence and power-dependence study of the microwave-radiation-induced magnetoresistance oscillations in high mobility GaAs/AlGaAs heterostructure devices at liquid helium temperatures. The diagonal resistance was measured with the magnetic field fixed at the extrema of the radiation-induced magnetoresistance oscillations, as the microwave power was varied at a number of microwave polarization angles. The results indicate a nonlinear relation between the oscillatory peak or valley magnetoresistance and the microwave power, as well as a cosine square relation between the oscillatory peak or valley magnetoresistance and the microwave polarization angle. The main features are briefly compared with the predictions of existing models. 
Tianyu Ye, Han-Chun Liu, W. Wegscheider, and R. G. Mani
cond-mat.mes-hall