Ballistic performance comparison of monolayer transition metal   dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) MOSFETs
  We study the transport properties of monolayer MX2 (M = Mo, W; X = S, Se, Te) n- and p- channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green's function simulations with an atomistic tight-binding Hamiltonian with hopping potentials obtained from density functional theory. We discuss the subthreshold slope, drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX2 MOSFETs. We also report the possibility of negative differential resistance behavior in the output characteristics of nanoscale monolayer MX2 MOSFETs. 
Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee
cond-mat.mes-hall