Hole Spin Coherence in a Ge/Si Heterostructure Nanowire
  Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time $T_2^* \sim 0.18~\mathrm{\mu s}$ exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing. 
A. P. Higginbotham, T. W. Larsen, J. Yao, H. Yan, C. M. Lieber, C. M.   Marcus, F. Kuemmeth
cond-mat.mes-hall