Large Fermi energy modulation in graphene transistors with high-pressure   O2-annealed Y2O3 topgate insulators
  We demonstrate a considerable suppression of the low-field leakage through a Y2O3 topgate insulator on graphene by applying high-pressure O2 at 100 atm during post-deposition annealing (HP-PDA). Consequently, the quantum capacitance measurement for the monolayer graphene reveals the largest Fermi energy modulation (EF = ~0.52 eV, i.e., the carrier density of ~2*10^13 cm^-2) in the solid-state topgate insulators reported so far. HP-PDA is the robust method to improve the electrical quality of high-k insulators on graphene. 
Kaoru Kanayama, Kosuke Nagashio, Tomonori Nishimura, and Akira Toriumi
cond-mat.mtrl-sci