MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts
  For the first time, n-type few-layer MoS2 field-effect transistors with graphene/Ti as the hetero-contacts have been fabricated, showing more than 160 mA/mm drain current at 1 {\mu}m gate length with an on-off current ratio of 107. The enhanced electrical characteristic is confirmed in a nearly 2.1 times improvement in on-resistance and a 3.3 times improvement in contact resistance with hetero-contacts compared to the MoS2 FETs without graphene contact layer. Temperature dependent study on MoS2/graphene hetero-contacts has been also performed, still unveiling its Schottky contact nature. Transfer length method and a devised I-V method have been introduced to study the contact resistance and Schottky barrier height in MoS2/graphene /metal hetero-contacts structure. 
Yuchen Du, Lingming Yang, Jingyun Zhang, Han Liu, Kausik Majumdar,   Paul D. Kirsch, and Peide D. Ye
cond-mat.mtrl-sci cond-mat.mes-hall