Imaging the buried MgO/Ag interface: formation mechanism of the STM   contrast
  Scanning tunneling microscopy (STM) provides real-space electronic state information at the atomic scale that is most commonly used to study materials surfaces. An intriguing extension of the method is attempt to study the electronic structure at an insulator/conductor interface by performing low-bias imaging above the surface of an ultrathin insulating layer on the conducting substrate. We use first-principles theory to examine the physical mechanisms giving rise to the formation of low-bias STM images in the MgO/Ag system. We show that the main features of the low-bias STM contrast are completely determined by the atoms on the surface of MgO. Hence, the low-bias contrast is formed by states at the Fermi level in the Ag that propagate evanescently through the lattice and atomic orbitals of the MgO on their way to the surface. We develop a number of analysis techniques based on an ab initio tight-binding representation that allow identification of the origin of the STM contrast in cases where previous approaches have proven ambiguous. 
Andrei Malashevich, Eric I. Altman, Sohrab Ismail-Beigi
cond-mat.mtrl-sci