Strain induced metal-insulator transition in ultrathin films of   SrRuO$_3$
  The ultrathin film limit has been shown to be a rich playground for unusual low dimensional physics. Taking the example of SrRuO$_3$ which is ferromagnetic and metallic at the bulk limit, one finds that it becomes antiferromagnetic and insulating at the three monolayers limit when grown on SrTiO$_3$. The origin of the insulating state is traced to strongly orbital dependent exchange splittings. A modest compressive strain of 1% of the SrTiO$_3$ substrate is then found to drive the system into a highly confined two-dimensional 100% spin polarized metallic state. This metal-insulator transition driven by a modest strain could be useful in two state device applications. 
Kapil Gupta, Basudeb Mandal, Priya Mahadevan
cond-mat.mtrl-sci