An Extended H\"uckel Study of the Electronic Properties of III-V   Compounds and Their Alloys
  In this work, we performed tight binding calculations of the electronic structure of III-V semiconductors compounds and their alloys based on the Extended H\"uckel Theory (EHT), where the H\"uckel parameters for the binary compounds were generated following a simulated annealing procedure. In particular, this article is focused on the dependency between band gap and the applied pressure and also the alloy composition. 
Ingrid A. Ribeiro, Fabio J. Ribeiro and A. S. Martins
cond-mat.mtrl-sci cond-mat.mes-hall