Precision calculation of energy levels for four-valent Si I
  We report results of the calculation of the low-lying levels of neutral Si using a combination of the configuration interaction and many-body perturbation theory (CI+MBPT method). We treat Si I as an atom with four valence electrons and use two different starting approximations, namely $V^{N-2}$ and $V^{N-4}$. We conclude that both approximations provide comparable accuracy, on the level of 1%. 
R. T. Imanbaeva, M. G. Kozlov, and E. A. Konovalova
physics.atom-ph