Electronic structure of Ba(Zn0.875Mn0.125)2As2 studied by angle-resolved   photoemission spectroscopy
  Electronic structure of single crystalline Ba(Zn$_{0.875}$Mn$_{0.125}$)$_{2}$As$_{2}$, parent compound of the recently founded high-temperature ferromagnetic semiconductor, was studied by high-resolution photoemission spectroscopy (ARPES). Through systematically photon energy and polarization dependent measurements, the energy bands along the out-of-plane and in-plane directions were experimentally determined. Except the localized states of Mn, the measured band dispersions agree very well with the first-principle calculations of undoped BaZn$_{2}$As$_{2}$. A new feature related to Mn 3d states was identified at the binding energies of about -1.6 eV besides the previously observed feature at about -3.3 eV. We suggest that the hybridization between Mn and As orbitals strongly enhanced the density of states around -1.6 eV. Although our resolution is much better compared with previous soft X-ray photoemission experiments, no clear hybridization gap between Mn 3d states and the valence bands proposed by previous model calculations was detected. 
Fengfeng Zhu, W. X. Jiang, P. Li, Z. Q. Wang, H. Y. Man, Y. Y. Li,   Canhua Liu, D. D. Guan, J. F. Jia, F. L. Ning, Weidong ...
cond-mat.mtrl-sci