Interlayer current near the edge of an InAs/GaSb double quantum well in   proximity with a superconductor
  We investigate charge transport through the junction between a niobium superconductor and the edge of a two-dimensional electron-hole bilayer, realized in an InAs/GaSb double quantum well. For the transparent interface with a superconductor, we demonstrate that the junction resistance is determined by the interlayer charge transfer near the interface. From an analysis of experimental $I-V$ curves we conclude that the proximity induced superconductivity efficiently couples electron and hole layers at low currents. The critical current demonstrates periodic dependence on the in-plane magnetic field, while it is monotonous for the field which is normal to the bilayer plane. 
A. Kononov, S.V. Egorov, N. Titova, B.R. Semyagin, V.V.   Preobrazhenskii, M.A. Putyato, E.A. Emelyanov, and E.V. Deviatov
cond-mat.mes-hall cond-mat.supr-con