Nuclear spin warm-up in bulk n-GaAs
  We show that the spin-lattice relaxation in n-type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, that cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the quadrupole relaxation, induced by fluctuating donor charges. Therefore, quadrupole relaxation, that governs low field nuclear spin relaxation in semiconductor quantum dots, but was so far supposed to be harmless to bulk nuclei spins in the absence of optical pumping can be studied and harnessed in much simpler model environment of n-GaAs bulk crystal. 
M. Kotur, R. I. Dzhioev, M. Vladimirova, B. Jouault, V. L. Korenev,   and K. V. Kavokin
cond-mat.mes-hall