Disorder effects in correlated topological insulators
  Using exact diagonalization and quantum Monte Carlo calculations we investigate the effects of disorder on the phase diagram of both non-interacting and interacting models of two-dimensional topological insulators. In the fermion sign problem-free interacting models we study, electron-electron interactions are described by an on-site repulsive Hubbard interaction and disorder is included via the one-body hopping operators. In both the non-interacting and interacting models we make use of recent advances in highly accurate real-space numerical evaluation of topological invariants to compute phase boundaries, and in the non-interacting models determine critical exponents of the transitions. We find different models exhibit distinct stability conditions of the topological phase with respect to interactions and disorder. We provide a general analytical theory that accurately predicts these trends. 
Hsiang-Hsuan Hung, Aaron Barr, Emil Prodan, Gregory A. Fiete
cond-mat.str-el