Transition-metal dichalcogenide heterostructure solar cells: A numerical   study
  We evaluate the tunneling short-circuit current density $J_{TU}$ in a $p$-$i$-$n$ solar cell in which the transition metal dichalcogenide heterostructure (MoS$_2$/WS$_2$ superlattice) is embedded in the intrinsic $i$ region. The effects of varying well and barrier widths, Fermi energy levels and number of quantum wells in the $i$ region on $J_{TU}$ are examined. A similar analysis is performed for the thermionic current $J_{TH}$ that arises due to the escape and recapture of charge carriers between adjacent potential wells in the $i$-region. The interplay between $J_{TU}$ and $J_{TH}$ in the temperature range (300 K - 330 K) is examined. The thermionic current is seen to exceed the tunneling current considerably at temperatures beyond 310 K, a desirable attribute in heterostructure solar cells. This work demonstrates the versatility of monolayer transition metal dichalcogenides when utilized as fabrication materials for van der Waals heterostructure solar cells. 
A. Thilagam
cond-mat.mtrl-sci