Metal-insulator transition in a strongly-correlated two-dimensional   electron system
  Experimental results on the metal-insulator transition and related phenomena in strongly interacting two-dimensional electron systems are discussed. Special attention is given to recent results for the strongly enhanced spin susceptibility, effective mass, and thermopower in low-disordered silicon MOSFETs. 
A.A. Shashkin and S.V. Kravchenko
cond-mat.str-el