Temperature dependence of the spin Hall angle and switching current in   the nc-W(O)/CoFeB/MgO system with perpendicular magnetic anisotropy
  We investigated the temperature dependence of the switching current for a perpendicularly magnetized CoFeB film deposited on a nanocrystalline tungsten film with large oxygen content: nc-W(O). The spin Hall angle $|\Theta_\mathrm{SH}| \approx 0.22$ is independent of temperature, whereas the switching current increases strongly at low temperature. We show that the nc-W(O) is insensitive to annealing. It thus can be a good choice for the integration of spin Hall driven writing of information in magnetic memory or logic devices that require a high-temperature annealing process during fabrication. 
Lukas Neumann, Daniel Meier, Jan Schmalhorst, Karsten Rott, G\"unter   Reiss, Markus Meinert
cond-mat.mtrl-sci