Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back   Schottky Diode as Selector Device for Large Scale RRAM Arrays
  In this work we present silicon process compatible, stable and reliable ($>10^{8}$cycles), high non-linearity ratio at half-read voltage ($>5\times 10^{5}$), high speed ($<60ns$) low operating voltage ($<2V$) back-to-back Schottky diodes. Materials choice of electrode, thickness of semiconductor layer and doping level are investigated by numerical simulation, experiments and current-voltage equations to give a general design consideration when back-to-back Schottky diodes are used as selector device for Resistive Random Access Memory(RRAM) arrays. 
Cheng-Chih Hsieh, Yao-Feng Chang, Ying-Chen Chen, Heng-Lu Chang,   Davood Shahrjerdi and Sanjay.K.Banerjee
cond-mat.mes-hall