LaPtSb: a half-Heusler compound with high thermoelectric performance
  The electronic and transport properties of the half-Heusler compound LaPtSb are investigated by performing first-principles calculations combined with semi-classical Boltzmann theory and deformation potential theory. Compared with many typical half-Heusler compounds, the LaPtSb exhibits obviously larger power factor at room temperature, especially for the n-type system. Together with the very low lattice thermal conductivity, the thermoelectric figure of merit (ZT) of LaPtSb can be optimized to a record high value of 2.2 by fine tuning the carrier concentration. 
Q. Y. Xue, H. J. Liu, D. D. Fan, L. Cheng, B. Y. Zhao, J. Shi
cond-mat.mtrl-sci