Ferroelectric Domain Patterning Controlled Schottky Junction State in   Monolayer MoS$_2$
  We exploit scanning probe controlled domain patterning in a ferroelectric top layer to induce nonvolatile modulation of the conduction characteristic of monolayer MoS$_2$ between a transistor and a junction state. In the presence of a domain wall, MoS$_2$ exhibits rectified I-V that is well described by the thermionic emission model. The induced Schottky barrier height varies from 0.38 eV to 0.57 eV and is tunabe by a SiO$_2$ global back-gate, while the tuning range of depends sensitively on the conduction band tail trapping states. Our work points to a new route to achieving programmable functionalities in van der Waals materials and sheds light on the critical performance limiting factors in these hybrid systems. 
Zhiyong Xiao, Jingfeng Song, David K. Ferry, Stephen Ducharme and Xia   Hong
cond-mat.mes-hall