Nanosecond spin relaxation times in single layer graphene spin valves   with hexagonal boron nitride tunnel barriers
  We present an experimental study of spin transport in single layer graphene using atomic sheets of hexagonal boron nitride (h-BN) as a tunnel barrier for spin injection. While h-BN is expected to be favorable for spin injection, previous experimental studies have been unable to achieve spin relaxation times in the nanosecond regime, suggesting potential problems originating from the contacts. Here, we investigate spin relaxation in graphene spin valves with h-BN barriers and observe room temperature spin lifetimes in excess of a nanosecond, which provides experimental confirmation that h-BN is indeed a good barrier material for spin injection into graphene. By carrying out measurements with different thicknesses of h-BN, we show that few layer h-BN is a better choice than monolayer for achieving high non-local spin signals and longer spin relaxation times in graphene. 
Simranjeet Singh, Jyoti Katoch, Jinsong Xu, Cheng Tan, Tiancong Zhu,   Walid Amamou, James Hone and Roland Kawakami
cond-mat.mes-hall cond-mat.mtrl-sci