Nanosecond magnetization dynamics during spin Hall switching of in-plane   magnetic tunnel junctions
  We present a study of the magnetic dynamics associated with nanosecond scale magnetic switching driven by the spin Hall effect in 3-terminal nanoscale magnetic tunnel junctions (3T-MTJs) with in-plane magnetization. Utilizing fast pulse measurements in a variety of material stacks and detailed micromagnetic simulations, we demonstrate that this unexpectedly fast and reliable magnetic reversal is facilitated by the self-generated Oersted field, and the short-pulse energy efficiency can be substantially enhanced by micromagnetic curvature in the magnetic free layer. The sign of the Oersted field is essential for this enhancement --- in simulations in which we artificially impose a field-like torque with a sign opposite to the effect of the Oersted field, the result is a much slower and stochastic switching process that is reminiscent of the so-called incubation delay in conventional 2-terminal spin-torque-switched MTJs. 
Graham E. Rowlands, Sriharsha V. Aradhya, Shengjie Shi, Erin H.   Yandel, Junseok Oh, Daniel C. Ralph, Robert A. Buhrman
cond-mat.mes-hall