Strain in Epitaxial High-Index Bi2Se3(221) Films Grown by Molecular-Beam   Epitaxy
  High-index Bi2Se3(221) film has been grown on In2Se3-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi2Se3(221) can be attributed to the layered structure of Bi2Se3 crystal, where the epifilm grown along [221] is like a pile of weakly-coupled quintuple layer slabs stacked side-by-side on substrate. Finally, we have revealed the strong chemical bonding at the interface of Bi2Se3 and In2Se3 by plotting differential charge contour calculated by first-principle method. This study points to the feasibility of achieving strained TIs for manipulating the properties of topological systems. 
B. Li, W. G. Chen, X. Guo, W. K. Ho, X. Q. Dai, J. F. Jia, and M. H.   Xie
cond-mat.mtrl-sci