High-field electron transport in bulk ZnO
  Current-voltage dependence is measured in (Ga,Sb)-doped ZnO up to 150 kV/cm electric fields. A channel temperature is controlled by applying relatively short (few ns) voltage pulses to two-terminal samples. The dependence of electron drift velocity on electron density ranging from 1.42$\times$10$^{17}$ cm$^{-3}$ to 1.3$\times$10$^{20}$ cm$^{-3}$ at a given electric field is deduced after estimation of the sample contact resistance and the Hall electron mobility. Manifestation of the highest electron drift velocity up to $\sim$1.5$\times$10$^{7}$ cm/s is estimated for electron density of 1.42$\times$10$^{17}$ cm$^{-3}$ and is in agreement with Monte Carlo simulation when hot-phonon lifetime is below 1 ps. A local drift velocity maximum is observed at $\sim$1.1$\times$10$^{19}$ cm$^{-3}$ and is in agreement with ultra-fast hot phonon decay. 
L. Ardaravi\v{c}ius, J. Liberis, M. Ramonas, E. \v{S}ermuk\v{s}nis, A.   Matulionis, M. Toporkov, V. Avrutin, \"U. \"Ozg\"ur...
cond-mat.mtrl-sci