Band Offset in (Ga,In)As/Ga(As,Sb) Heterostructures
  A series of (Ga,In)As/GaAs/Ga(As,Sb) multi-quantum well heterostructures is analyzed using temperature- and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the k$\cdot$p method. This theory-experiment comparison reveals an unusual, temperature dependent variation of the band alignment between the (Ga,In)As and Ga(As,Sb) quantum wells. 
S. Gies, M.J. Weseloh, C. Fuchs, W. Stolz, J. Hader, J.V. Moloney,   S.W. Koch, and W. Heimbrodt
cond-mat.mes-hall