Interlayer Conductance of Graphene with Multiple Transfer Process
  Electrical properties of multi-layer graphene are subject to variations due to random interlayer alignments. In this work we reported graphene interlayer conductance without special layer aligning. Ohmic contacts between two graphene layers are observed with resistance variations of more than one order. With Raman spectroscopy we identify that the lattice angle between twisted graphene layers is the key variation source. The angular dependence and temperature dependence of the interlayer conductance suggest that a phonon assistant tunneling mechanism is valid for the interlayer transport of graphene prepared by multiple transfer process. We finally derive that the multi-layer graphene resistance shows an exponential-like distribution due to the random interlayer misalignments. 
Yin Sun, Xintong Zhang, Longyan Wang, Lining Zhang, Salahuddin Raju,   Mansun Chan
cond-mat.mes-hall