Observation of large spin accumulation voltages in non-degenerate Si   spin devices due to spin drift effect: Experiments and theory
  A large spin-accumulation voltage of more than 1.5 mV at 1 mA, i.e., a magnetoresistance of 1.5 {\Omega}, was measured by means of the local three-terminal magnetoresistance in nondegenerate Si-based lateral spin valves (LSVs) at room temperature. This is the largest spin-accumulation voltage measured in semiconductor-based LSVs. The modified spin drift-diffusion model, which successfully accounts for the spin drift effect, explains the large spin-accumulation voltage and significant bias-current-polarity dependence. The model also shows that the spin drift effect enhances the spin-dependent magnetoresistance in the electric two terminal scheme. This finding provides a useful guiding principle for spin metal-oxide semiconductor field-effect transistor (MOSFET) operations. 
Takayuki Tahara (1), Yuichiro Ando (1), Makoto Kameno (2), Hayato   Koike (3), Kazuhito Tanaka (2), Shinji Miwa (2), Yoshish...
cond-mat.mtrl-sci