Quantitative strain analysis of InAs/GaAs quantum dot materials
  Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattice in a wide region that extends several nanometers into the GaAs spacer layer below and above the QDs. Finally, we show how V-shaped dislocations originating at the QD/GaAs interface efficiently remove most of the lattice mismatch induced tetragonal distortions in and around the QD. 
Per Erik Vullum, Magnus Nord, Maryam Vatanparast, Sedsel Fretheim   Thomassen, Chris Boothroyd, Randi Holmestad, Bjorn-Ove F...
cond-mat.mtrl-sci cond-mat.mes-hall