Formation of buried conductive micro-channels in single crystal diamond   with MeV C and He implantation
  As demonstrated in previous works, implantation with a MeV ion microbeam through masks with graded thickness allows the formation of conductive micro-channels in diamond which are embedded in the insulating matrix at controllable depths [P. Olivero et al., Diamond Relat. Mater. 18 (5-8), 870-876 (2009)]. In the present work we report about the systematic electrical characterization of such micro-channels as a function of several implantation conditions, namely: ion species and energy, implantation fluence. The current-voltage (IV) characteristics of the buried channels were measured at room temperature with a two point probe station. Significant parameters such as the sheet resistance and the characteristic exponent (alpha) of the IV power-law trend were expressed as a function of damage density, with satisfactory compatibility between the results obtained in different implantation conditions. 
F. Picollo, P. Olivero, F. Bellotti, \v{Z}. Pastuovi\'c, N. Skukan, A.   Lo Giudice, G. Amato, M. Jak\v{s}i\'c, E. Vittone
cond-mat.mes-hall