Lattice strain and tilt mapping in stressed Ge microstructures using   X-ray Laue micro-diffraction and rainbow-filtering
  Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micron scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain mapping. We performed the measurements in a series of micro-devices under either uniaxial or biaxial stress and found an excellent agreement with numerical simulations. This shows the superior potential of Laue micro-diffraction for the investigation of highly strained micro-devices. 
Samuel Tardif, Alban Gassenq, Kevin Guilloy, Nicolas Pauc, Guilherme   Osvaldo Dias, Jean-Michel Hartmann, Julie Widiez, Tho...
cond-mat.mtrl-sci