Liquid-Gated High Mobility and Quantum Oscillation of the   Two-Dimensional Electron Gas at an Oxide Interface
  Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ (LAO/STO) interface through ionic liquid-assisted electric field effect. By changing the gate voltages, the depletion of charge carrier and the resultant enhancement of electron mobility up to 19380 cm$^2$/Vs are realized, leading to quantum oscillations of the conductivity at the LAO/STO interface. The present results suggest that high-mobility oxide interfaces which exhibit quantum phenomena could be obtained by ionic liquid-assisted field effect. 
Shengwei Zeng, Weiming L\"u, Zhen Huang, Zhiqi Liu, Kun Han, Kalon   Gopinadhan, Changjian Li, Rui Guo, Wenxiong Zhou, Haiji...
cond-mat.str-el cond-mat.mes-hall