Measurements and TCAD Simulations of Bulk and Surface Radiation Damage   Effects in Silicon Detectors
  In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1{\div}2 10^16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures. 
F. Moscatelli, P. Maccagnani, D. Passeri, G.M. Bilei, L. Servoli, A.   Morozzi, G.-F. Dalla Betta, R. Mendicino, M. Boscardi...
physics.ins-det hep-ex