Picosecond all-optical switching of magnetic tunnel junctions
  Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and electric field or strain assisted switching have been implemented to switch magnetization in various spintronic devices. Their operation speed, however, is fundamentally limited by the spin precession time to be longer than 10-100 picoseconds. Overcoming such a speed constraint is critical for the prospective development of spintronics. Here we report the demonstration of picosecond all-optical switching of a magnetic tunnel junction (MTJ)- the building block of spintronic logic and memory -only using single telecom-band, infrared laser pulses. This first optically switchable MTJ uses ferrimagnetic GdFeCo as the free layer, and its switching is directly readout by measuring its tunneling magnetoresistance with a DR/R ratio of 0.6%. An instrument limited switching repetition rate at MHz has been demonstrated, but the fundamental limit should be higher than tens of GHz. This result represents an important step toward integrated opto-spintronic devices that combines spintronics and photonics technologies to enable ultrafast conversion between fundamental information carriers of electron spins and photons. 
Jun-Yang Chen, Li He, Jian-Ping Wang and Mo Li
cond-mat.mtrl-sci cond-mat.mes-hall