Effect of doping and In-composition on gain of long wavelength   III-nitride QDs
  In this work, we calculate material gain for long wavelength III-nitride InN and AlInN quantum dot (QD) structures. Strain and QD inhomogeneity are included in the calculations. The study covers (800-2300 nm) wavelength range which is important in optical communications. While p-doping is shown to be efficient to increasing gain, changing QD size (especially QD radius) is more efficient to vary wavelength. The results predicted that n-doped QD structures are promises for broad band laser applications. 
Ahmed S. Jbara, H. I. Abood, and Amin H. Al-Khursan
cond-mat.mtrl-sci