Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar   planes: the effect of stacking faults in the reduction of the internal   electric field
  The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacking faults inside these quantum dots is evidenced in the dependence of the photoluminescence with temperature and excitation power. A theoretical model for the electronic structure and optical properties of non-polar quantum dots, taking into account their realistic shapes, is presented which predicts a substantial reduction of the internal electric field but a persisting quantum confined Stark effect, comparable to that of polar GaN/AlN quantum dots. Modeling the effect of a 3 monolayer stacking fault inside the quantum dot, which acts as zinc-blende inclusion into the wurtzite matrix, results in an additional 30 % reduction of the internal electric field and gives a better account of the observed optical features. 
J. A. Budagosky, N. Garro, A. Cros, A. Garc\'ia-Crist\'obal, S. Founta   and B. Daudin
cond-mat.mes-hall