Wide bandwidth nanowire electromechanics on insulating substrates at   room temperature
  We study InAs nanowire resonators fabricated on sapphire substrate with a local gate configuration. The key advantage of using an insulating sapphire substrate is that it results in a reduced parasitic capacitance thus allowing both wide bandwidth actuation and detection using a network analyzer as well as signal detection at room temperature. Both in-plane and out-of-plane vibrational modes of the nanowire can be driven and the non-linear response of the resonators studied. In addition this technique enables the study of variation of thermal strains due to heating in nanostructures 
T. S. Abhilash, John P Mathew, Shamashis Sengupta, Mahesh R Gokhale,   Arnab Bhattacharya, Mandar M. Deshmukh
cond-mat.mes-hall