Flexible MgO barrier magnetic tunnel junctions
  Flexible electronic devices require the integration of multiple crucial components on soft substrates to achieve their functions. In particular, memory devices are the fundamental component for data storage and processing in flexible electronics. Here, we present flexible MgO barrier magnetic tunnel junction (MTJ) devices fabricated using a transfer printing process, which exhibit reliable and stable operation under substantial deformation of the device substrates. In addition, the flexible MTJ devices yield significantly enhanced tunneling magnetoresistance (TMR) of ~300 % and improved abruptness of switching, as residual strain in the MTJ structure induced by the fabrication process is released during the transfer process. This approach could be useful for a wide range of flexible electronic systems that require high performance memory components. 
Li Ming Loong, Wonho Lee, Xuepeng Qiu, Ping Yang, Hiroyo Kawai, Mark   Saeys, Jong-Hyun Ahn, Hyunsoo Yang
cond-mat.mtrl-sci