Comment on "Alternative interpretation of the recent experimental   results of angle-resolved photoemission spectroscopy on GaMnAs [Sci. Rep. 6,   27266 (2016)]" by M. Kobayashi et al., arXiv:1608.07718
  Recently, Kobayashi et al. (arXiv:1608.07718; ref. 1) have proposed an alternative interpretation of our angle-resolved photoemission spectroscopy (ARPES) results for the dilute ferromagnetic semiconductor (Ga,Mn)As. They claim that our ARPES data [Sci. Rep. 6, 27266 (2016); ref. 2] can be explained by locating the Fermi level EF above the valence-band top, supporting the impurity-band model of ferromagnetic (Ga,Mn)As. In this comment, we show that the assignment of bands' positions in respect to EF by Kobayashi et al. is not consistent with our data. By comparing the ARPES result to band-structure calculations, we demonstrate clearly that EF resides inside the valence band in accordance with the p-d Zener model. 
S. Souma, L. Chen, R. Oszwa{\l}dowski, T. Sato, F. Matsukura, T.   Dietl, H. Ohno, and T. Takahashi
cond-mat.mtrl-sci