Spin-dependent transport and current modulation in a current-in-plane   field-effect transistor
  We propose a current-in-plane spin-valve field-effect transistor (CIP-SV-FET), which is composed of a ferromagnet / nonferromagnet / ferromagnet trilayer structure and a gate electrode. This is a promising device alternative to spin metal-oxide-semiconductor field-effect transistors. Here, we fabricate a ferromagnetic-semiconductor GaMnAs-based CIP-SV-FET and demonstrate its basic operation of the resistance modulation both by the magnetization configuration and by the gate electric field. Furthermore, we present the electric-field-assisted magnetization reversal in this device. 
Toshiki Kanaki, Tomohiro Koyama, Daichi Chiba, Shinobu Ohya, and   Masaaki Tanaka
cond-mat.mes-hall