Decoupling edge versus bulk conductance in the trivial regime of an   InAs/GaSb double quantum well using Corbino ring geometry
  A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically-predicted topological system with a temperature insensitive linear resistivity per unit length in the range of 2 kOhm/um. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n-type. 
Binh-Minh Nguyen, Andrey A. Kiselev, Ramsey Noah, Wei Yi, Fanming Qu,   Arjan J.A. Beukman, Folkert K. de Vries, Jasper van ...
cond-mat.mes-hall