N-P-N Bipolar Action in Junctionless Nanowire TFET: Physical Operation   of a Modified Current Mechanism for Low Power Applications
  In this paper we study the device physics of a technique for realizing an n-p-n bipolar transistor action in the source side of a junctionless nanowire tunneling FET (BJN-TFET). In the on-state, tunneling of electrons from valence band of the source to conduction band of the channel enhances the hole concentration as well as the potential in the source region which drives a built-in BJT transistor by forward biasing the base-emitter junction, with the source acting as a p-type region. Owing to the sharp switching of the JN-TFET and high BJT current gain, the overall performance is improved, including favorable high on-state current (2.17*10-6 A/um), and sub 60 mV/dec subthreshold swing (~ 50 mV/dec) at low supply voltages. This approach modifies the current mechanism owning to the triggered BJT and makes the proposed structure more attractive for scaling requirements in future low power application. 
Morteza Rahimiana, Morteza Fathipour
cond-mat.mes-hall