Two-Dimensional Oscillatory Neural Network Based on Charge-Density-Wave   Devices Operating at Room Temperature
  We propose an oscillatory neural network implemented with two-dimensional tantalum disulfide devices operating in the change density wave regime at room temperature. An elementary cell of the network consists of two 1T-TaS2 devices connected in series. Such a cell has constant output and oscillatory states. All cells have the same bias voltage. There is constant current flowing through the cell in the constant output mode. The oscillations occur at a certain bias voltage due to the electrical-field driven metal-to-insulator transition owing to the changes in the charge density wave phase in the 1T-TaS2 channel. Two 1T-TaS2 devices oscillate out-of-phase where one of the devices is in the insulator phase while the other one is in the metallic state. The nearest-neighbor cells are coupled via graphene transistors. The cells are resistively coupled if the graphene transistor is in the On state while they are capacitively coupled if the transistor is in the Off state. The operation of the oscillatory neural network is simulated numerically for the 30x30 node network. The results of our numerical modeling show the formation of artificial vortexes and cellular-automata type data processing. The two-dimensional 1T-TaS2 devices, utilized in the network, offer a unique combination of properties such as scalability, high operational frequency, fast synchronization speed, and radiation hardness, which makes them promising for both consumer electronic and defense applications. 
Alexander Khitun, Guanxiong Liu, and Alexander A. Balandin
cs.ET cond-mat.mes-hall