Surface-gate-defined single-electron-transistor in a MoS$_{2}$ bilayer
  We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS$_{2}$ bilayer. By combining density-functional theory and finite-element analysis, we design a surface gate structure to electrostatically define and tune a quantum dot and its associated tunnel barriers in the MoS$_{2}$ bilayer. Our approach suggests new pathways for the creation of novel quantum electronic devices in two-dimensional materials. 
M. Javaid, Daniel W. Drumm, Salvy P. Russo, and Andrew D. Greentree
cond-mat.mes-hall