The influence of edge effects on the determination of the doping profile   of silicon pad diodes
  Edge effects for square p+n pad diodes with guard rings, fabricated on high-ohmic silicon, are investigated. Using capacitance-voltage measurements of two pad diodes with different areas, the planar and the edge contributions to the diode capacitance are determined separately. It is shown that the doping concentration derived from the capacitance-voltage measurements with and without edge corrections differ significantly. After the edge correction, the bulk doping of the pad diodes is found to be uniform within +/- 1.5%. The voltage dependence of the edge capacitance is compared to the predictions of two simple models. 
M. Hufschmidt, E. Fretwurst, E. Garutti, R. Klanner, I. Kopsalis, J.   Schwandt
physics.ins-det