Gate-tunable spin-charge conversion and a role of spin-orbit interaction   in graphene
  The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge conversion material. We report electric gate tuning of the spin-charge conversion voltage signal in a single-layer graphene. Using spin pumping from yttrium iron garnet ferrimagnetic insulator and ionic liquid top gate we determined that the inverse spin Hall effect is the dominant spin-charge conversion mechanism in a single-layer graphene. From the gate dependence of the electromotive force we showed dominance of the intrinsic over Rashba spin-orbit interaction: a long-standing question in graphene research. 
S. Dushenko (1,2), H. Ago (3), K. Kawahara (3), T. Tsuda (4), S.   Kuwabata (4), T. Takenobu (5), T. Shinjo (2), Y. Ando (2)...
cond-mat.mtrl-sci cond-mat.mes-hall