Vanadium Dioxide: Metal-Insulator Transition, Electrical Switching and   Oscillations. A Review of State of the Art and Recent Progress
  Vanadium dioxide is currently considered as one of the most promising metarials for oxide elcteronics. Both planar and sandwich thin-film MOM devices based on VO2 exhibit electrical switching with an S-shaped I-V characteristic, and this switching effect is associated with the metal-insulator transition (MIT). In an electrical circuit containing such a switching device, relaxation oscillations are observed if the load line intersects the I-V curve at a unique point in NDR region. All these effects are potentially prospective for designing various devices of oxide electronics, particularly, elements of dynamical neural networks based on coupled oscillators. 
Alexander Pergament, Aurelian Crunteanu, Arnaud Beaumont, Genrikh   Stefanovich, and Andrey Velichko
cond-mat.mtrl-sci cond-mat.str-el