Transport in a two-dimensional disordered electron liquid with isospin   degrees of freedom
  Recent theoretical results on transport in a two-dimensional disordered electron liquid with spin and isospin degrees of freedom are reviewed. A number of experimental features in temperature dependence of resistivity at low temperatures in Si-MOSFET, n-AlAs quantum well and double quantum well heterostructures is explained. Novel behavior of low-temperature resistivity at low temperature in electron systems with isospin degrees of freedom are predicted. 
I.S. Burmistrov
cond-mat.mes-hall