Disruptive effect of Dzyaloshinskii-Moriya interaction on the MRAM cell   performance
  In order to increase the thermal stability of a magnetic random access memory (MRAM) cell, materials with high spin-orbit interaction are often introduced in the storage layer. As a side effect, a strong Dzyaloshinskii-Moriya interaction (DMI) may arise in such systems. Here we investigate the impact of DMI on the magnetic cell performance, using micromagnetic simulations. We find that DMI strongly promotes non-uniform magnetization states and non-uniform switching modes of the magnetic layer. It appears to be detrimental for both the thermal stability of the cell and its switching current, leading to considerable deterioration of the cell performance even for a moderate DMI amplitude. 
J. Sampaio, A. V. Khvalkovskiy, M. Kuteifan, M. Cubukcu, D. Apalkov,   V. Lomakin, V. Cros, and N. Reyren
cond-mat.mes-hall