Robust spin transfer torque in antiferromagnetic tunnel junctions
  We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling the electrical manipulation of the N\'eel antiferromagnetic order parameter is out of plane $\sim {\bf n}\times{\bf p}$, while the torque competing with the antiferromagnetic exchange is in-plane $\sim {\bf n}\times({\bf p}\times{\bf n})$. Here, ${\bf { p}}$ and ${\bf { n}}$ are the N\'eel order parameter direction of the reference and free layers, respectively. Their bias dependence shows similar behavior as in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than in antiferromagnetic metallic spin-valves due to the tunneling nature of spin transport. 
H. Saidaoui, A. Manchon, X. Waintal
cond-mat.mes-hall