Study of crystal-field splitting in ultrathin CePt$_5$ layers by Raman   spectroscopy
  Low-temperature electronic properties of rare-earth intermetallics are substantially influenced by the symmetry and magnitude of the crystal electric field. The direct spectroscopic analysis of crystal field splitting can be challenging, especially in low-dimensional systems, because it requires both high spectral resolution and pronounced sensitivity. We demonstrate the eligibility of electronic Raman spectroscopy for this purpose by the direct determination of the $4f$ level splitting in ultra-thin ordered CePt$_5$ films down to 1.7 nm thickness on Pt(111). Crystal field excitations of Ce $4f$ electrons give rise to Raman peaks with energy shifts up to $\approx$ 25 meV. Three distinct peaks occur which we attribute to inequivalent Ce sites, located (i) at the interface to the substrate, (ii) next to the Pt-terminated surface, and (iii) in the CePt$_5$ layers in between. The well-resolved Raman signatures allow us to identify a reduced crystal field splitting at the interface and an enhancement at the surface, highlighting its strong dependence on the local atomic environment. 
B. Halbig, U. Bass, J. Geurts, M. Zinner, and K. Fauth
cond-mat.str-el cond-mat.mes-hall