Carrier Multiplication-Induced Structural Change during Ultrafast   Carrier Relaxation and Non-Thermal Phase Transition in Semiconductors
  While being extensively studied as an important physical process to alter exciton population in nanostructures at fs time scale, carrier multiplication has not been considered seriously as a major mechanism for phase transition. Real-time time-dependent density functional theory study of Ge2Sb2Te5 reveals that carrier multiplication can induce ultrafast phase transition in solid state despite that the lattice remains cold. The results also unify the experimental findings in other semiconductors for which the explanation remains to be the 30-year old phenomenological plasma annealing model. 
Junhyeok Bang, Y. Y. Sun, X.-Q. Liu, F. Gao, and S. B. Zhang
cond-mat.mtrl-sci