The identification of the dominant donors in low temperature grown InPBi   materials
  Combined with magnetotransport measurements and first-principles calculations, we systematically investigated the effects of Bi incorporation on the electrical properties of the undoped InP1-xBix epilayers with 0<x<2.41%. The Hall-bar measurements reveal a dominant n-type conductivity of the InPBi samples. The electron concentrations are found to decrease firstly as x increases up to x=1.83%, and then increase again with further increasing Bi composition, whiles the electron mobility shows an inverse variation to the electron concentration. First-principle calculations suggest that both the phosphorus antisites and vacancy defects are the dominant donors responsible for the high electron concentration. And their defect concentrations show different behaviors as Bi composition x increases, resulting in a nonlinear relationship between electron concentration and Bi composition in InPBi alloys. 
G. N. Wei, D. Xing, Q. Feng, W. G. Luo, Y. Y. Li, K. Wang, L. Y.   Zhang, W. W. Pan, S. M. Wang, S. Y. Yang and K. Y. Wang
cond-mat.mtrl-sci