Proposal for a spin MOSFET based on spin gapless semiconductors
  We propose a spintronic metal oxide semiconductor field effect transistor (spin MOSFET) where a spin gapless semiconductor (SGS) constitutes the channel and the drain is a ferromagnetic metal. SGS exhibit a non-zero band gap in only one of the spin sub-bands and feature complete spin polarization at finite temperature. We present an analytical model of the device and comment the properties relevant for devices applications. Our results boost SGS as a new paradigm for the spin MOSFET concept. 
Patrizio Graziosi
cond-mat.mtrl-sci