Observation of anti-levitation of Landau levels in vanishing magnetic   fields
  We report an anti-levitation behavior of Landau levels in vanishing magnetic fields in a high quality hetero-junction insulated-gated field-effect transistor. We found, in the Landau fan diagram of electron density versus magnetic field, the positions of the magneto-resistance minima at Landau level fillings \nu=4, 5, 6 move below the 'traditional' Landau level line to lower electron densities. Moreover, the even and odd filling factors show quantitatively different behaviors in anti-levitation, suggesting that the exchange interactions may be important. 
W. Pan, K.W. Baldwin, K.W. West, L.N. Pfeiffer and D.C. Tsui
cond-mat.mes-hall