Spintronics in half-passivated graphene
  In this thesis, I propose a practical way to stabilize half passivated graphene (graphone). I show that the dipole moments induced by a hexagonal-boron nitride (h-BN) substrate on graphene stabilize the hydrogen atoms on one sublattice of the graphene layer and suppress the migration of the adsorbed hydrogen atoms. I also present the substrate effect of h-BN that reduces distortion induced by fluorination of graphene and stabilizes half-passivated graphene in a single sublattice. Then using spin-polarized density functional calculations I investigate magnetic properties of graphone. I show the system has different magnetic order which can be described by either super-exchange or double exchange mechanisms depending on the type the of add atom. The hybridization of graphene changes from $sp^2$- to $sp^3$- type hybridization due to the buckling induced by passivation. The change in hybridization together with add-atom orbitals induces a fairly large spin orbit coupling (SOC). Based upon first principle spin-polarized density of states calculations, I show that the graphone obtained in different graphene/h-BN heterostructures exhibits a half metallic state. I propose to use this exotic material for spin valve systems and other spintronics devices. 
Shayan Hemmatiyan
cond-mat.mes-hall cond-mat.mtrl-sci