Influence of disordered edges on transport properties in graphene
  The influence of plasma etched sample edges on electrical transport and doping is studied. Through electrical transport measurements the overall doping and mobility are analyzed for mono- and bilayer graphene samples. As a result the edge contributes strongly to the overall doping of the samples. Furthermore the edge disorder can be found as the main limiting source of the mobility for narrow samples. 
D. Smirnov, G. Yu. Vasileva, J. C. Rode, C. Belke, Yu. B. Vasilyev,   Yu. L. Ivanov, and R. J. Haug
cond-mat.mes-hall