Tunneling Planar Hall Effect in Topological Insulators: Spin-Valves and   Amplifiers
  We investigate tunneling across a single ferromagnetic barrier on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a tunneling planar Hall conductance (TPHC), transverse to the applied bias, develops. Electrostatic control of the barrier enables a giant Hall angle, with the TPHC exceeding the longitudinal tunneling conductance. By changing the in-plane magnetization direction it is possible to change the sign of both the longitudinal and transverse differential conductance without opening a gap in the topological surface state. The transport in a topological insulator/ferromagnet junction can thus be drastically altered from a simple spin-valve to an amplifier. 
Benedikt Scharf, Alex Matos-Abiague, Jong E. Han, Ewelina M.   Hankiewicz, Igor \v{Z}uti\'c
cond-mat.mes-hall