Integration  of GaAlAs Heterostructure Optoelectronics on   Si Integrated Circuits for High Speed Interfaces and        Interconnects
{'Code': '07010000', 'Directorate': {'LongName': 'Directorate For Engineering'}, 'Division': {'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Lawrence S. Goldberg'}
This one-year research effort builds on past advances in the molecular          beam epitaxy of GaA1As heterostructures on Si achieved under previous           NSF support.  It will concentrate on improving the performance of the           cw laser diodes on silicon by incorporating compressive strain in the           quantum well active regions, improving material quality, and reducing           residual "bulk" layer strains.  The collaboration with Professor Carl           Thompson in the Department of Materials Science and Engineering on the          initial stages of nucleation and on the development of improved growth          techniques will be continued.  Preliminary work on selective area               epitaxy will be conducted, and an active collaboration with colleagues          in the silicon-oriented MIT Microsystems Technology Laboratory will be          established to develop a growth sequence which is compatible with               their BICMOS process.
{'FirstName': 'Clifton', 'LastName': 'Fonstad', 'EmailAddress': 'fonstad@mit.edu', 'StartDate': '11/01/1988', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'Massachusetts Institute of Technology', 'CityName': 'Cambridge', 'ZipCode': '021394301', 'PhoneNumber': '6172531000', 'StreetAddress': '77 MASSACHUSETTS AVE', 'CountryName': 'United States', 'StateName': 'Massachusetts', 'StateCode': 'MA'}
{'Code': '1456', 'Text': 'SOLID-STATE&MICROSTRUCTURE RES'}
{'url': 'https://www.nsf.gov/awardsearch/download?DownloadFileName=1988&All=true', 'xml': '8807496.xml'}