PYIA:  Research In MOCVD Crystal Growth for Optoelectronic  Devices
{'Code': '07010000', 'Directorate': {'Abbreviation': 'ENG', 'LongName': 'Directorate For Engineering'}, 'Division': {'Abbreviation': 'ECCS', 'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Brian J. Clifton', 'PO_EMAI': None, 'PO_PHON': None}
In this research, investigations into the growth of compound            semiconductors for optoelectronic device applications will be                   undertaken. Initial efforts have focused on design and construction of a        crystal growth facility.  The primary first year funding of this NSF            award will support a graduate research assistant for 9 months and a             technical support person for 11 months, part time.  Additional matching         funds are currently under procurement.  Within this first year, we              expect to obtain high purity GaAs and AlGaAs materials of exceptional           uniformity over a 3" substrate.  Device structures for new lasers and           other optoelectronic components will be fabricated and tested at CHTM.          Students will be trained in the art of MOCVD and experiments directed at        new materials to extend the wavelength range of optoelectronic                  components.
{'FirstName': 'Christian', 'LastName': 'Schaus', 'PI_MID_INIT': 'F', 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Christian F Schaus', 'EmailAddress': None, 'NSF_ID': '000182509', 'StartDate': '07/01/1987', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'University of New Mexico', 'CityName': 'ALBUQUERQUE', 'ZipCode': '87131', 'PhoneNumber': '5052774186', 'StreetAddress': '1700 LOMAS BLVD NE STE 2200', 'StreetAddress2': None, 'CountryName': 'United States', 'StateName': 'New Mexico', 'StateCode': 'NM', 'CONGRESSDISTRICT': '01', 'CONGRESS_DISTRICT_ORG': 'NM01', 'ORG_UEI_NUM': 'F6XLTRUQJEN4', 'ORG_LGL_BUS_NAME': 'UNIVERSITY OF NEW MEXICO', 'ORG_PRNT_UEI_NUM': None}
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{'Code': '145600', 'Text': 'SOLID-STATE&MICROSTRUCTURE RES'}
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