Comparative Chemical Studies of GaAs Grown from Methyl-     Precursors and Etched by Methyl Radicals in OMVPE Reactors
{'Code': '07020000', 'Directorate': {'LongName': 'Directorate For Engineering'}, 'Division': {'LongName': 'Div Of Chem, Bioeng, Env, & Transp Sys'}}
{'SignBlockName': 'Maria Burka'}
The PI plans research aimed at clarifying the chemical steps in                 the Organometallic Vapor Phase Epitaxial (OMVPE) growth of                      compounds such as GaAs and AlGaAs used in electronic and                        optoelectronic devices.  This project should result in                          guidelines for more detailed studies of the chemical kinetics                   and the reaction mechanisms operative in OMVPE crystal growth.                                                                                                  The specific work will involve studies of the effect of methyl                  radicals on well characterized GaAs and AlGaAs surfaces.  The                   work will be primarily experimental, for example, post-reaction                 surfaces will be examined by Scanning Electron                                  Microscopy/Energy Dispersive X-ray Analysis (SEM/EDX), etc.
{'FirstName': 'Maria', 'LastName': 'Flytzani-Stephanopoulos', 'EmailAddress': 'mflytzan@tufts.edu', 'StartDate': '08/01/1987', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'Massachusetts Institute of Technology', 'CityName': 'Cambridge', 'ZipCode': '021394301', 'PhoneNumber': '6172531000', 'StreetAddress': '77 MASSACHUSETTS AVE', 'CountryName': 'United States', 'StateName': 'Massachusetts', 'StateCode': 'MA'}
[{'Code': '9120', 'Text': 'CROSS-DIRECTORATE PROGRAMS'}, {'Code': '9145', 'Text': 'SPECIAL PROGRAMS-RESERVE'}]
{'url': 'https://www.nsf.gov/awardsearch/download?DownloadFileName=1987&All=true', 'xml': '8708030.xml'}