IUC: Band Structure, Transport and optical properties of Hg-Te-CdTe Superlattices
{'Code': '07010000', 'Directorate': {'Abbreviation': 'ENG', 'LongName': 'Directorate For Engineering'}, 'Division': {'Abbreviation': 'ECCS', 'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Cassandra Queen', 'PO_EMAI': 'cqueen@nsf.gov', 'PO_PHON': '7032925383'}
This research is on the basic behavior of HgTe-CdTe.  The HgTe-CdTe             superlattice is a new microstructure which has recently been made by            molecular beam epitaxy (MBE).  Initial theory and experiment indicate           that it has unusual fundamental properties such as a                            semiconductor-to-semimetal transition and two-dimensional behavior.             The structure is also expected to be useful as an infrared detector,            with advantages over the widely used alloy HgCdTe.  Infrared (5-400 cm)         spectroscopy and magnetospectroscopy will be used to probe fundamental          band structure, transport, and optical properties.  A metalorganic              chemical vapor deposition (MOCVD) supperlattice growth process will be          initiated and structural, middle infrared, and dc measurements will be          carried out to characterize HgTe-CdTe as a detector material.
{'FirstName': 'Sidney', 'LastName': 'Perkowitz', 'PI_MID_INIT': None, 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Sidney Perkowitz', 'EmailAddress': 'PHYSP@EMUVM1.CCEMORY.EDU', 'NSF_ID': '000169912', 'StartDate': '08/01/1985', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
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