Research Initiation: Dielectric Degradation and Breakdown   in Scaled Nitride/Oxide.
{'Code': '07010000', 'Directorate': {'Abbreviation': 'ENG', 'LongName': 'Directorate For Engineering'}, 'Division': {'Abbreviation': 'ECCS', 'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Cassandra Queen', 'PO_EMAI': 'cqueen@nsf.gov', 'PO_PHON': '7032925383'}
The primary objective of the proposed research is to produce an                 accurate model of trap generation and leakage currents to develop               effective models of breakdown and to maintain a certain level of                performance as the dimensions of nonvolatile memory transistors are             scaled.  The research strategy involves parallel efforts on trap state          generation, annealing of stress-induced damage, and the development of          a theoretical analysis utilizing second order trapping kinetics theory          for the analysis of key phenomena which are characteristic of                   dielectric breakdown failures.
{'FirstName': 'Steven', 'LastName': 'Bibyk', 'PI_MID_INIT': 'B', 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Steven B Bibyk', 'EmailAddress': 'bibyk.1@osu.edu', 'NSF_ID': '000272431', 'StartDate': '08/01/1985', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
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{'Code': '145600', 'Text': 'SOLID-STATE&MICROSTRUCTURE RES'}
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