Simulation of High Speed AlGaAs/GaAs Heterojunction Bipolar Transistors
{'Code': '07010000', 'Directorate': {'Abbreviation': 'ENG', 'LongName': 'Directorate For Engineering'}, 'Division': {'Abbreviation': 'ECCS', 'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Cassandra Queen', 'PO_EMAI': 'cqueen@nsf.gov', 'PO_PHON': '7032925383'}
This is a continuation of the research program at the University of             Massachusetts on the computer modeling of advanced semiconductor                devices.  A specific objective is to extend the state-of-the-art of the         numerical modeling of heterojunction semiconductor devices for high             speed and/or high frequency applications.  Over the past twelve years,          we have modeled semiconductor devices ranging from large VMOS power             transistors to submicron permeable base transistors (PBT) in our                laboratory.  In view of recent interest in high speed heterojunction            transistors such as HEMT (high electron mobility transistors) and HBT           (heterojunction bipolar transistors), it is natural to extend our               research to the modeling of semiconductor devices involving                     heterojunctions.  Focus will be placed on the AlGaAs/GaAs system  but           the InGaP/GaAs heterojunction and the InGaAs/GaAs strained-layer                heterojunction may be included as well, time permitting.  The basic             heterojunction GaAs structures to be modeled are vertical devices such          as HBTs.  Hot carrier transport in the graded base region of these              devices will be investigated.  Both transient and small-signal ac               drift-diffusion analysis will be performed to accurately determine the          unit-current gain cutoff frequency.
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