Utilization of Oxygen Injection in OMCVD for III-V Electron c Materials (REU)
{'Code': '07010000', 'Directorate': {'Abbreviation': 'ENG', 'LongName': 'Directorate For Engineering'}, 'Division': {'Abbreviation': 'ECCS', 'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Arthur R. Bergen', 'PO_EMAI': None, 'PO_PHON': None}
A one-year study to explore and develop an oxidation process for III-V          semiconductors in an OMCVD system is proposed.  The oxidation can               serve the purpose of either in-situ cleaning or mask generation for             selective epitaxy, utilizing the different oxidation and sublimation            temperatures of various III-V compounds and their oxides.  In-situ              oxide mask generation not only reduces the processing procedures for            selective epitaxy but also provides better semiconductor-oxide                  interfaces.  Preliminary experiments carried out in a modified                  reaction chamber with an additional oxygen inlet and exhaust has been           extremely promising.  Successful development of this project will               create new revenues for both semiconductor processing ("all-vacuum"             process) and III-V MOS devices.
{'FirstName': 'Kei', 'LastName': 'Lau', 'PI_MID_INIT': 'M', 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Kei M Lau', 'EmailAddress': 'lau@ecs.umass.edu', 'NSF_ID': '000383919', 'StartDate': '07/15/1988', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'University of Massachusetts Amherst', 'CityName': 'AMHERST', 'ZipCode': '010039252', 'PhoneNumber': '4135450698', 'StreetAddress': '101 COMMONWEALTH AVE', 'StreetAddress2': None, 'CountryName': 'United States', 'StateName': 'Massachusetts', 'StateCode': 'MA', 'CONGRESSDISTRICT': '02', 'CONGRESS_DISTRICT_ORG': 'MA02', 'ORG_UEI_NUM': 'VGJHK59NMPK9', 'ORG_LGL_BUS_NAME': 'UNIVERSITY OF MASSACHUSETTS', 'ORG_PRNT_UEI_NUM': 'VGJHK59NMPK9'}
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