Mossbauer Measurement of DX Center in III-V Semiconductors
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{'SignBlockName': 'Arthur R. Bergen', 'PO_EMAI': None, 'PO_PHON': None}
At lower temperatures, the higher mobility of electrons in gallium              arsenide makes this material the more attractive circuit component.             Unfortunately, when n-type AlGaAs semiconductors are cooled in the              dark, the carriers are frozen out by a self-compensation mechanism,             and their desirable electronic properties are lost.  The nature of the          mechanism of self-compensation, the so-called DX phenomenon, is a               matter of current controversy.  One model (D-no-X) views the effect as          intrinsic to the donors themselves, and hence an absolute deterrent to          low-temperature applications of III-V semiconductors.  The other model          identifies the process as defect-driven and hence avoidable, at least           in principle.  It is clear that resolution of the problem is crucial            to the future development of high-performance III-V semiconductors.             We propose to resolve the DX problem by using Mossbauer spectroscopy            to obtain information about the solid state electronic environment of           dopant muclei in AlGaAs semiconductors.
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