Ft. Monmouth Interaction:  "Delta" Doped Layers in GaAs
{'Code': '07010000', 'Directorate': {'Abbreviation': 'ENG', 'LongName': 'Directorate For Engineering'}, 'Division': {'Abbreviation': 'ECCS', 'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Lawrence Goldberg', 'PO_EMAI': None, 'PO_PHON': None}
This proposal concerns the initiation of a one-year collaborative               research program between Rensselaer Polytechnic Institute and the U.S.          Army Electronics Technology and Devices Laboratory in Fort Monmouth,            New Jersey.  The work will focus upon the growth of n-type "delta-              doped" layers in GaAs by molecular beam epitaxy (MBE).  It is intended          that these layers approximate fixed charge sheets when depleted, so             minimum thickness and maximum electrically active donor concentration           are primary growth objectives.  Although problems concerning material           growth will receive primary emphasis, some simple electrical                    measurements are planned in order to anticipate future device                   applications, particularly the Bipolar Inversion-Channel FET (BICFET)           and shallow ohmic contacts to n-GaAs.
{'FirstName': 'Edward', 'LastName': 'Maby', 'PI_MID_INIT': 'W', 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Edward W Maby', 'EmailAddress': 'maby@ecse.rpi.edu', 'NSF_ID': '000087879', 'StartDate': '04/15/1988', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'Rensselaer Polytechnic Institute', 'CityName': 'TROY', 'ZipCode': '121803590', 'PhoneNumber': '5182766000', 'StreetAddress': '110 8TH ST', 'StreetAddress2': None, 'CountryName': 'United States', 'StateName': 'New York', 'StateCode': 'NY', 'CONGRESSDISTRICT': '20', 'CONGRESS_DISTRICT_ORG': 'NY20', 'ORG_UEI_NUM': 'U5WBFKEBLMX3', 'ORG_LGL_BUS_NAME': 'RENSSELAER POLYTECHNIC INSTITUTE', 'ORG_PRNT_UEI_NUM': None}
{'Name': None, 'CityName': None, 'StateCode': None, 'ZipCode': None, 'StreetAddress': None, 'CountryCode': None, 'CountryName': None, 'StateName': None, 'CountryFlag': None, 'CONGRESSDISTRICT': None, 'CONGRESS_DISTRICT_PERF': '""'}
{'Code': '1456', 'Text': 'SOLID-STATE&MICROSTRUCTURE RES'}
{'url': 'https://www.nsf.gov/awardsearch/download?DownloadFileName=1987&All=true', 'xml': '8719260.xml'}