SBIR: Optical Characterization Techniques for Silicon-on-   Insulator Material
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{'SignBlockName': 'Ritchie B. Coryell', 'PO_EMAI': None, 'PO_PHON': None}
Present techniques of examining recrystallized silicon, including SOI           material, include a wet (acid) etch and examination with an optical             microscope, X-ray diffraction, SEM or TEM microscopes.  These                   techniques are slow, and usually the sample is destroyed.  The PI               propose investigating angle-resolved light scatter techniques as a              technique to examine recrystallized silicon as well as other                    microelectronics materials.  The technique would be nonperturbing,              could be applied in situ, would be fast, and could be adapted for               automation.
{'FirstName': 'Scott', 'LastName': 'Wilson', 'PI_MID_INIT': 'R', 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Scott R Wilson', 'EmailAddress': None, 'PI_PHON': None, 'NSF_ID': '000480529', 'StartDate': '02/01/1987', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'Sandia Systems', 'CityName': 'Albuquerque', 'ZipCode': '871113032', 'PhoneNumber': '5052940438', 'StreetAddress': '13423 Desert Hills N.E.', 'StreetAddress2': None, 'CountryName': 'United States', 'StateName': 'New Mexico', 'StateCode': 'NM', 'CONGRESSDISTRICT': '01', 'CONGRESS_DISTRICT_ORG': 'NM01', 'ORG_UEI_NUM': None, 'ORG_LGL_BUS_NAME': None, 'ORG_PRNT_UEI_NUM': None}
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{'Code': '5371', 'Text': 'SBIR Phase I'}
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