Quantum Transport of Femtosecond Photoexcited Carriers in   Semiconductor Hetero-Structures of GaAs and Si
{'Code': '07010000', 'Directorate': {'Abbreviation': 'ENG', 'LongName': 'Directorate For Engineering'}, 'Division': {'Abbreviation': 'ECCS', 'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Brian J. Clifton', 'PO_EMAI': None, 'PO_PHON': None}
Picosecond time resolved photoluminescence experiments may be used to           probe GaAs/Si interface quality and to study the effects of the built-          in strain in GaAs and related structures on various material                    properties and carrier and phonon dynamic processes which are crucial           to the operation of high speed devices.  So far, no relevant                    picosecond studies have been reported.  The PI proposes a research              plan to investigate the quality of GaAs and carrier dynamics in GaAs            quantum well structures grown on Si by time resolved photoluminescence          measurements.
[{'FirstName': 'Kai', 'LastName': 'Shum', 'PI_MID_INIT': None, 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Kai Shum', 'EmailAddress': None, 'NSF_ID': '000169164', 'StartDate': '05/01/1989', 'EndDate': None, 'RoleCode': 'Co-Principal Investigator'}, {'FirstName': 'Robert', 'LastName': 'Alfano', 'PI_MID_INIT': None, 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Robert Alfano', 'EmailAddress': 'alfano@sci.ccny.cuny.edu', 'NSF_ID': '000189154', 'StartDate': '05/01/1989', 'EndDate': None, 'RoleCode': 'Principal Investigator'}]
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{'Code': '145600', 'Text': 'SOLID-STATE&MICROSTRUCTURE RES'}
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