Study of GaAs/AlGaAs Power Heterojunction Bipolar           Transistors Prepared By Molecular Beam Epitaxy
{'Code': '07010000', 'Directorate': {'Abbreviation': 'ENG', 'LongName': 'Directorate For Engineering'}, 'Division': {'Abbreviation': 'ECCS', 'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Brian J. Clifton', 'PO_EMAI': None, 'PO_PHON': None}
The PI will build and model the performance of power microwave (Al,Ga)          As/GaAs heterojunction bipolar transistors.  He will attempt to obtain          considerable power at X band frequencies.  He will try various methods          of improving device reliability with attention to thermal management.           He will collaborate with Rockwell International Science Center for              detailed power measurements and transistor reliability studies.
{'FirstName': 'Hadis', 'LastName': 'Morkoc', 'PI_MID_INIT': None, 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Hadis Morkoc', 'EmailAddress': 'hmorkoc@vcu.edu', 'PI_PHON': '8048273765', 'NSF_ID': '000328467', 'StartDate': '03/01/1989', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'University of Illinois at Urbana-Champaign', 'CityName': 'URBANA', 'ZipCode': '618013620', 'PhoneNumber': '2173332187', 'StreetAddress': '506 S WRIGHT ST', 'StreetAddress2': None, 'CountryName': 'United States', 'StateName': 'Illinois', 'StateCode': 'IL', 'CONGRESSDISTRICT': '13', 'CONGRESS_DISTRICT_ORG': 'IL13', 'ORG_UEI_NUM': 'Y8CWNJRCNN91', 'ORG_LGL_BUS_NAME': 'UNIVERSITY OF ILLINOIS', 'ORG_PRNT_UEI_NUM': None}
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{'Code': '1456', 'Text': 'SOLID-STATE&MICROSTRUCTURE RES'}
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