Secondary Ion Mass Spectrometer (SIMS) Analysis of Defects  in Semiconductors
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Traditional methods for characterizing defects in semiconductors                are not entirely adequate at the VLSI/ULSI level of integration.                SIMS coupled with defect decoration by a SIMS-sensitive element                 is proposed as a complementary method.  The objectives of this                  Phase I project are: (1) to determine how well SIMS can detect                  oxygen precipitates, dislocation loops, and stacking faults in                  silicon when a SIMS-sensitive element is used to decorate the                   defects; and (2) to determine the quantitative relationship                     between the SIMS measurement of the decorative element and the                  defect density and size.  The primary decorative element to be                  studied is fluorine.
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{'Code': '5371', 'Text': 'SBIR Phase I'}
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