Engineering Research Equipment Grant:  Rapid Thermal        Annealing Facility
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{'SignBlockName': 'Cassandra Queen', 'PO_EMAI': 'cqueen@nsf.gov', 'PO_PHON': '7032925383'}
Short-term annealing of implanted semiconductors using incoherent light         sources is currently being widely used.  This research is concerned             with the establishment of a halogen lamp rapid thermal annealing                system.  The system will be used in ongoing experiments aimed at the            understanding of the basic process and its optimization and in device           fabrication.  The latter includes both microwave and optoelectronic             devices.  The availability of such a system in the laboratory will              enable more extensive studies in the various areas.
{'FirstName': 'Pallab', 'LastName': 'Bhattacharya', 'PI_MID_INIT': 'K', 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Pallab K Bhattacharya', 'EmailAddress': 'pkb@eecs.umich.edu', 'NSF_ID': '000436762', 'StartDate': '08/01/1985', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
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