PYI:  Modeling of Three Terminal High-Speed                 Semiconductor Devices
{'Code': '07010000', 'Directorate': {'Abbreviation': 'ENG', 'LongName': 'Directorate For Engineering'}, 'Division': {'Abbreviation': 'ECCS', 'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Deborah L. Crawford', 'PO_EMAI': None, 'PO_PHON': None}
The objective of this research program is to investigate the                    performance of new high-speed three-terminal semiconductor devices,             particularly, the high electron mobility transistor (HEMT), the                 heterostructure bipolar transistor (HBT), and the hot electron                  transistor.  The modeling of these devices requires a rigorous                  treatment of nonstationary transport phenomena, velocity overshoot,             and ballistic transport, within the context of a two-dimensional Monte          Carlo solution of the semiclassical Boltzmann Transport Equation                coupled with the two-dimensional Poisson equation.  The Monte Carlo             method rigorously treats from first principles all of the essential             physics of nonstationary transport.  The model has been fully tested            and calibrated through a series of "bootstrap" tests; prediction of             bulk velocity-field profiles, two-dimensional mobilities and real               space transfer effects.  The NSF super-computer center in Pittsburg             will be used to perform these calculations.  Specifically, new                  pseudomorphic HEMTs and resonant tunneling emitter, hot electron                transistors will be studied.  It is expected that new, optimized                geometries for high speed device operation will be developed.
{'FirstName': 'Kevin', 'LastName': 'Brennan', 'PI_MID_INIT': 'F', 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Kevin F Brennan', 'EmailAddress': None, 'NSF_ID': '000195548', 'StartDate': '07/23/1993', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'Georgia Tech Research Corporation', 'CityName': 'ATLANTA', 'ZipCode': '303186395', 'PhoneNumber': '4048944819', 'StreetAddress': '926 DALNEY ST NW', 'StreetAddress2': None, 'CountryName': 'United States', 'StateName': 'Georgia', 'StateCode': 'GA', 'CONGRESSDISTRICT': '05', 'CONGRESS_DISTRICT_ORG': 'GA05', 'ORG_UEI_NUM': 'EMW9FC8J3HN4', 'ORG_LGL_BUS_NAME': 'GEORGIA TECH RESEARCH CORP', 'ORG_PRNT_UEI_NUM': 'EMW9FC8J3HN4'}
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[{'Code': '1456', 'Text': 'SOLID-STATE&MICROSTRUCTURE RES'}, {'Code': '1517', 'Text': 'EPMD-ElectrnPhoton&MagnDevices'}]
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