Low-Freguency Noise in Solid State Devices
{'Code': '07010000', 'Directorate': {'Abbreviation': 'ENG', 'LongName': 'Directorate For Engineering'}, 'Division': {'Abbreviation': 'ECCS', 'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Cassandra Queen', 'PO_EMAI': 'cqueen@nsf.gov', 'PO_PHON': '7032925383'}
This is a study of low-frequency noise in solid state devices such as           Bipolar Junction Transistors (BJTs), Heterojunction Bipolar Junction            Transistors (HBJTs), MESFETs, MODFETs, MOSFETs and Permeable Base               Transistors (PBTs) in the frequency range 10 Hz - 890 MHz and the               temperature range 300 - 10 K.  The aim is to study frequency, bias, and         temperature dependence of the noise to unravel the low-frequency noise          processes present.  Freeze-out effects will be studied.  In BJTs and            HBJTs, possible correlation effects between base and collector noise            and the nature of burst noise and its possible correlation with 1/f             noise will be considered.
{'FirstName': 'A.', 'LastName': 'Van der Ziel', 'PI_MID_INIT': None, 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'A. Van der Ziel', 'EmailAddress': None, 'NSF_ID': '000379649', 'StartDate': '07/01/1985', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'University of Minnesota-Twin Cities', 'CityName': 'MINNEAPOLIS', 'ZipCode': '554552009', 'PhoneNumber': '6126245599', 'StreetAddress': '200 OAK ST SE', 'StreetAddress2': None, 'CountryName': 'United States', 'StateName': 'Minnesota', 'StateCode': 'MN', 'CONGRESSDISTRICT': '05', 'CONGRESS_DISTRICT_ORG': 'MN05', 'ORG_UEI_NUM': 'KABJZBBJ4B54', 'ORG_LGL_BUS_NAME': 'REGENTS OF THE UNIVERSITY OF MINNESOTA', 'ORG_PRNT_UEI_NUM': None}
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{'Code': '145600', 'Text': 'SOLID-STATE&MICROSTRUCTURE RES'}
{'url': 'https://www.nsf.gov/awardsearch/download?DownloadFileName=1984&All=true', 'xml': '8420106.xml'}