(Ga,A1)As Optoelectronics on Oxidized Silicon Wafers        for High Speed IC Optical Interconnect
{'Code': '07010000', 'Directorate': {'Abbreviation': 'ENG', 'LongName': 'Directorate For Engineering'}, 'Division': {'Abbreviation': 'ECCS', 'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
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Interconnects are playing an increasingly important role in limiting            the speed of high performance integrated circuit chips and systems.             This motivation has fostered research to use optical rather than                electrical interconnects.  The research in progress addresses the               fabrication problems posed by efforts to use the standard silicon wafer         with a gallium arsenide (GaAs) light emitter incorporated.  The                 approach is experimental and investigates use of indium to aid in               matching lattices of different materials.
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