Ft. Monmouth Interaction:  Fabrication and Characterization of New Double-Heterojunction MODFET
{'Code': '07010000', 'Directorate': {'Abbreviation': 'ENG', 'LongName': 'Directorate For Engineering'}, 'Division': {'Abbreviation': 'ECCS', 'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Cassandra Queen', 'PO_EMAI': 'cqueen@nsf.gov', 'PO_PHON': '7032925383'}
The PI will continue efforts to fabricate a new type of Modulation              Doped Field Effect Transistor (MODFET).  Previous studies of MODFET's           have concentrated on layers with a single heterojunction (n-A1GaAs/i-           GaAs) or with double heterojunctions (n-A1GaAs/InGaAs/i-GaAs).  In              contracts, our device structures are composed on n-A1GaAs/GaAs( 100             A)/n-A1GaAs or n-A1GaAs/InGaAs( 100 A)/n-A1GaAs double                          heterojunctions.  We have experimentally demonstrated in our previous           effort that the maximum carrier concentration of the electrons in the           channel can be increased by including a second doped A1GaAs layer               below a very thin (100 A) channel region.  This increase in electron            concentration will lead to a larger transconductance and a large                saturation current density.
{'FirstName': 'Abul', 'LastName': 'Khondker', 'PI_MID_INIT': 'N', 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Abul N Khondker', 'EmailAddress': 'khondker@clarkson.edu', 'NSF_ID': '000368787', 'StartDate': '04/15/1988', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'Clarkson University', 'CityName': 'POTSDAM', 'ZipCode': '136761401', 'PhoneNumber': '3152686475', 'StreetAddress': '8 CLARKSON AVE', 'StreetAddress2': None, 'CountryName': 'United States', 'StateName': 'New York', 'StateCode': 'NY', 'CONGRESSDISTRICT': '21', 'CONGRESS_DISTRICT_ORG': 'NY21', 'ORG_UEI_NUM': 'SL2PF6R7MRN1', 'ORG_LGL_BUS_NAME': 'CLARKSON UNIVERSITY', 'ORG_PRNT_UEI_NUM': None}
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{'Code': '145600', 'Text': 'SOLID-STATE&MICROSTRUCTURE RES'}
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