PYI: N-and P-type Doping of ZnSe
{'Code': '07010000', 'Directorate': {'Abbreviation': 'ENG', 'LongName': 'Directorate For Engineering'}, 'Division': {'Abbreviation': 'ECCS', 'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Cassandra Queen', 'PO_EMAI': 'cqueen@nsf.gov', 'PO_PHON': '7032925383'}
Using molecular beam epitaxy (MBE) the PYI proposes to re-              evaluate the doping problems of ZnSe.  To even further affect the               incorporation of the impurity specie, the PYI plans to study the effects        of coherent optical excitation incident on the surface of the "growing"         film. Evaluation of the photo-assisted MBE layer and the unaffected MBE         layer will consist of double crystal X-ray diffraction to determine the         materials crystallinity, photoluminescence to study the materials               optical properties, and Hall measurements to look at the transport              properties.
{'FirstName': 'Leslie', 'LastName': 'Kolodziejski', 'PI_MID_INIT': 'A', 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Leslie A Kolodziejski', 'EmailAddress': 'leskolo@mit.edu', 'NSF_ID': '000290041', 'StartDate': '07/01/1987', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'Purdue Research Foundation', 'CityName': 'WEST LAFAYETTE', 'ZipCode': '479064353', 'PhoneNumber': '3174946200', 'StreetAddress': '1281 WIN HENTSCHEL BLVD STE 2500', 'StreetAddress2': None, 'CountryName': 'United States', 'StateName': 'Indiana', 'StateCode': 'IN', 'CONGRESSDISTRICT': '04', 'CONGRESS_DISTRICT_ORG': 'IN04', 'ORG_UEI_NUM': 'C1G1LGYJF5G5', 'ORG_LGL_BUS_NAME': 'PURDUE RESEARCH FOUNDATION', 'ORG_PRNT_UEI_NUM': 'YRXVL4JYCEF5'}
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{'Code': '145600', 'Text': 'SOLID-STATE&MICROSTRUCTURE RES'}
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