Physics of High-Mobility Materials and Interfaces
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Significant advances resulting from the previous year's support                 have been made in 1) persistent photocurrent mechanisms in                      gallium arsenide heterostructures, 2) identifying dominant                      electron scattering mechanisms in two inverted interfaces                       (gallium arsenide grown on aluminum gallium arsenide), 3)                       application of the dissipationless nature of the quantum Hall                   effect, and 4) electron transport in nanometer-scale lateral                    superlattice structures.  Continued support for this grant which                is being transferred from the University of Oregon to Georgia                   Tech University is strongly recommended.
{'FirstName': 'Richard', 'LastName': 'Higgins', 'PI_MID_INIT': 'J', 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Richard J Higgins', 'EmailAddress': 'richard.higgins@micr.gatech.edu', 'NSF_ID': '000105939', 'StartDate': '09/01/1987', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'Georgia Tech Research Corporation - GA Tech Research Institute', 'CityName': 'ATLANTA', 'ZipCode': '303186395', 'PhoneNumber': '4048941222', 'StreetAddress': '926 DALNEY ST NW', 'StreetAddress2': None, 'CountryName': 'United States', 'StateName': 'Georgia', 'StateCode': 'GA', 'CONGRESSDISTRICT': '05', 'CONGRESS_DISTRICT_ORG': 'GA05', 'ORG_UEI_NUM': 'EMW9FC8J3HN4', 'ORG_LGL_BUS_NAME': 'GEORGIA TECH RESEARCH CORP', 'ORG_PRNT_UEI_NUM': 'EMW9FC8J3HN4'}
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[{'Code': '1456', 'Text': 'SOLID-STATE&MICROSTRUCTURE RES'}, {'Code': '1761', 'Text': 'SOLID STATE PHYSICS'}]
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