Electronic Conduction in Submicron Field-Effect Transistors
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{'SignBlockName': 'Lawrence Goldberg', 'PO_EMAI': 'lgoldber@nsf.gov', 'PO_PHON': '7032928339'}
Recent results have demonstrated that metal-insulator-Si-field-effect           transistors (MOSFET's) can be made narrow enough that the electronic            conduction process in them changes in a fundamental way.  At low                temperature, large, nonmonotomic variations of the conductance are              observed when the voltage on the gate is varied.  Recent results on             devices with  70nm wide inversion layers indicate that the current is           limited by electron tunneling through localized states in the inversion         layer of the MOSFET.  These are apparently caused by the random                 potential resulting from ions on the surface of the oxide or variations         in the width of the gate wire.  This represents an unusual situation in         which the current is limited by electronic transitions through just one         electronic state.  New fabrication methods are being developed with the         goals of reducing the disorder caused by impurities on the oxide                surface and localized electronic states in the oxide, and making the            gate wires narrower and more uniform.  Devices are being fabricated in          the MIT Submicron Structures Laboratory, and they are being                     characterized at temperatures above 2;soK at MIT.
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