Nucleation and Lateral Overgrowth of GaAs on Silicon for    Optical Communications
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There are presently three ways of bringing optical technology and               integrated electronics together.  The first is to use silicon and               produce a laser with silicon.  This seems out of the question, although         not entirely.  The second is to use gallium arsenide for both optics            and circuitry.  However, the use of gallium arsenide for circuits is            more expensive and difficult than using silicon.  The third                     alternative, and the one which seems most viabale, is that of bringing          the silicon circuit technology together with gallium arsenide                   technology, which is the focus of the present proposal.
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