Chemical Vapor Deposition of Early Transition - Metal       Nitrides
{'Code': '03070004', 'Directorate': {'Abbreviation': 'MPS', 'LongName': 'Direct For Mathematical & Physical Scien'}, 'Division': {'Abbreviation': 'DMR', 'LongName': 'Division Of Materials Research'}}
{'SignBlockName': 'John C. Hurt', 'PO_EMAI': None, 'PO_PHON': None}
This research is being jointly supported by the Office of                  Special Projects in the Chemistry Division and the Ceramics and                 Electronic Materials Program in the Division of Materials                       Research under the Materials Chemistry Initiative at the National               Science Foundation.  The research under this grant concentrates                 on the synthesis and use of novel precursor molecules of                        inorganic and organometallic imido complexes for chemical vapor                 deposition of Group IV and V transition metal nitride thin films.               These molecules have several desirable features which will be                   explored, e.g. the presence of one preformed metal-nitrogen                     multiple chemical bond per metal atom, ancillary functional                     groups which have decomposition pathways at temperatures below                  4000 centigrade.  The structure and quality of the films are                    being determined using an electron microprobe for micro-                        chemical analysis, Rutherford Back-scattering for depth profiling               of chemical composition, Auger electron spectroscopy for chemical               bonding and chemical analysis, secondary ion mass spectroscopy                  for chemical analysis, photoelectron spectroscopy for chemical                  bonding, and x-ray diffraction for crystallographic                             characterization.                                                                                                                                                    The Group IV and V nitrides have unique combinations of                    properties that make them technologically important.  However,                  their application is limited by the absence of processing                       techniques to apply thin films of high quality at high rates of                 deposition and low temperatures.  The research being done under                 this grant will emphasize the discovery and synthesis of                        precursor compounds that will make organometallic chemical vapor                deposition of these nitrides technologically feasible.
[{'FirstName': 'Roy', 'LastName': 'Gordon', 'PI_MID_INIT': 'G', 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Roy G Gordon', 'EmailAddress': 'gordon@chemistry.harvard.edu', 'NSF_ID': '000279714', 'StartDate': '08/15/1988', 'EndDate': None, 'RoleCode': 'Principal Investigator'}, {'FirstName': 'David', 'LastName': 'Hoffman', 'PI_MID_INIT': None, 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'David Hoffman', 'EmailAddress': 'hoffman@uh.edu', 'NSF_ID': '000282893', 'StartDate': '08/15/1988', 'EndDate': None, 'RoleCode': 'Co-Principal Investigator'}]
{'Name': 'Harvard University', 'CityName': 'CAMBRIDGE', 'ZipCode': '021385366', 'PhoneNumber': '6174955501', 'StreetAddress': '1033 MASSACHUSETTS AVE STE 3', 'StreetAddress2': None, 'CountryName': 'United States', 'StateName': 'Massachusetts', 'StateCode': 'MA', 'CONGRESSDISTRICT': '05', 'CONGRESS_DISTRICT_ORG': 'MA05', 'ORG_UEI_NUM': 'LN53LCFJFL45', 'ORG_LGL_BUS_NAME': 'PRESIDENT AND FELLOWS OF HARVARD COLLEGE', 'ORG_PRNT_UEI_NUM': None}
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[{'Code': '1772', 'Text': 'CERAMICS & ELECTRONIC MATERIAL'}, {'Code': '1966', 'Text': 'SYNTHETIC INORGANIC'}, {'Code': '1984', 'Text': 'MATERIALS SYNTHESIS & PROCESSN'}]
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