Nanometer - Size Electronic Devices
{'Code': '07010000', 'Directorate': {'Abbreviation': 'ENG', 'LongName': 'Directorate For Engineering'}, 'Division': {'Abbreviation': 'ECCS', 'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Brian J. Clifton', 'PO_EMAI': None, 'PO_PHON': None}
The goal of this research program is to fabricate semiconductor                 devices small enough that new quantum-mechanical phenomena can be               observed.  Silicon MOSFET's will be produced with narrow 25 nm width            gates.  The conductance of these devices will be studied at low                 temperatures and high magnetic fields.  Recent results indicate that            electron-electron interactions may be altered in such confined                  geometries.  To better understand the nature of the high-conductance            state observed at high magnetic fields, a variety of split-gate                 devices will be fabricated with various widths but with constant ratio          of length to width.  By keeping this aspect ratio constant on passing           from very narrow to wide devices, the researchers expect to observe             the evolution of the high-field state in the confined geometry into             the quantum Hall state.  In this way, the dependence of the properties          of the high field state on width can be measured.  Experiments on the           magnetic field dependence of the step-gate devices will be carried out          of the Francis Bitter National Manget Laboratory.
{'FirstName': 'Marc', 'LastName': 'Kastner', 'PI_MID_INIT': 'A', 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Marc A Kastner', 'EmailAddress': 'mkastner@mit.edu', 'NSF_ID': '000273662', 'StartDate': '11/01/1988', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'Massachusetts Institute of Technology', 'CityName': 'Cambridge', 'ZipCode': '021394301', 'PhoneNumber': '6172531000', 'StreetAddress': '77 MASSACHUSETTS AVE', 'StreetAddress2': 'NE18-901', 'CountryName': 'United States', 'StateName': 'Massachusetts', 'StateCode': 'MA', 'CONGRESSDISTRICT': '07', 'CONGRESS_DISTRICT_ORG': 'MA07', 'ORG_DUNS_NUM': '001425594', 'ORG_LGL_BUS_NAME': 'MASSACHUSETTS INSTITUTE OF TECHNOLOGY', 'ORG_PRNT_DUNS_NUM': '001425594'}
{'Name': None, 'CityName': None, 'StateCode': None, 'ZipCode': None, 'StreetAddress': None, 'CountryCode': None, 'CountryName': None, 'StateName': None, 'CountryFlag': None, 'CONGRESSDISTRICT': None, 'CONGRESS_DISTRICT_PERF': '""'}
{'Code': '1456', 'Text': 'SOLID-STATE&MICROSTRUCTURE RES'}
{'url': 'https://www.nsf.gov/awardsearch/download?DownloadFileName=1988&All=true', 'xml': '8813250.xml'}