Channel Mobility Degradation in Very Thin Gate Oxide MOSFETs
{'Code': '07010000', 'Directorate': {'Abbreviation': 'ENG', 'LongName': 'Directorate For Engineering'}, 'Division': {'Abbreviation': 'ECCS', 'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Cassandra Queen', 'PO_EMAI': 'cqueen@nsf.gov', 'PO_PHON': '7032925383'}
As the gate oxide thickness of a metal- oxide- semiconductor (MOS)              transistor shrinks down to below 10nm, there is strong evidence that            the carrier mobility in the conduction channel is reduced                       systematically with gate oxide thickness.  The objective of the                 research is to experimentally establish the relationship between the            channel mobility and the gate oxide thickness for both p and n channel          devices over a wide range of thicknesses (3-20nm), with a goal toward           the development of a set of empirical equations useful for future               device simulations.  In addition, important issues pertinent to the             processing of very thin oxide MOSFET MOS field effect transistors (FET)         devices will be systematically investigated; the results should be              relevant to practical down- scaling of VLSI devices.
{'FirstName': 'Tso-Ping', 'LastName': 'Ma', 'PI_MID_INIT': None, 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Tso-Ping Ma', 'EmailAddress': 't.ma@yale.edu', 'NSF_ID': '000118561', 'StartDate': '12/15/1984', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'Yale University', 'CityName': 'NEW HAVEN', 'ZipCode': '065113572', 'PhoneNumber': '2037854689', 'StreetAddress': '150 MUNSON ST', 'StreetAddress2': None, 'CountryName': 'United States', 'StateName': 'Connecticut', 'StateCode': 'CT', 'CONGRESSDISTRICT': '03', 'CONGRESS_DISTRICT_ORG': 'CT03', 'ORG_UEI_NUM': 'FL6GV84CKN57', 'ORG_LGL_BUS_NAME': 'YALE UNIV', 'ORG_PRNT_UEI_NUM': 'FL6GV84CKN57'}
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{'Code': '145600', 'Text': 'SOLID-STATE&MICROSTRUCTURE RES'}
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