New Materials for Microelectronic and Optoelectronic        Integrated Circuits
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{'SignBlockName': 'Ritchie B. Coryell', 'PO_EMAI': None, 'PO_PHON': None}
The growth of device quality, large area GaAs epitaxial layers on               silicon substrates is recognized as an important technological                  development.  The quality of heteroepitaxial layers of GaAs on silicon          are limited by GaAs-Si lattice mismatch and thermal coefficient                 mismatch.  The defect density of the GaAs epilayer is directly related          to the interface area.  Our laboratories have demonstrated a viable             GaAs-Si growth technique:  selective liquid phase epitaxy, SLPE.  This          approach enhances the epilayer quality since the lateral  overgrowth            region is shielded from defects originating at the interface.                                                                                                   The substrate is prepared by placing a silicon dioxide layer on the             silicon and opening a selective pattern in the oxide using                      photolithography.  The nucleation vias will be five microns wide and            one hundred microns long, placed on fifty to one hundred micron                 centers.  After nucleation in the vias, lateral overgrowth will yield           device quality GaAs on silicon.  Direct contact between the GaAs and            silicon will be limited, which will limit lateral tension and confine           dislocation propagation to the via area.
{'FirstName': 'James', 'LastName': 'McNeely', 'PI_MID_INIT': 'B', 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'James B McNeely', 'EmailAddress': 'mcneely@astropower.com', 'PI_PHON': '3023660400', 'NSF_ID': '000276023', 'StartDate': '02/01/1988', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'AstroPower, Incorporated', 'CityName': 'Newark', 'ZipCode': '197162000', 'PhoneNumber': '3023660400', 'StreetAddress': 'Solar Park', 'StreetAddress2': None, 'CountryName': 'United States', 'StateName': 'Delaware', 'StateCode': 'DE', 'CONGRESSDISTRICT': '00', 'CONGRESS_DISTRICT_ORG': 'DE00', 'ORG_UEI_NUM': None, 'ORG_LGL_BUS_NAME': None, 'ORG_PRNT_UEI_NUM': None}
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{'Code': '5371', 'Text': 'SBIR Phase I'}
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