Quantizing Effects in Submicron Field Effect Transistors
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Spatial quantization of the electron wavefunction and changes in                electron scattering which result from the concomitant phase space               restrictions will become evident as current micron-size field effect            transistors are shrunk to 1/4 micron sizes. Experiments will be                 conducted to observe electromagnetically induced electron transitions           between spatially quantized levels in devices of dimension 0.1 to 0.3           um.  The issues of quantum-statistical limits and behavior, discrete            energy level structure, and single electron behavior may be addressed           by these studies.
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