Channel Mobility Degradation in Very ThinGate Oxide MOSFET's
{'Code': '07010000', 'Directorate': {'Abbreviation': 'ENG', 'LongName': 'Directorate For Engineering'}, 'Division': {'Abbreviation': 'ECCS', 'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Kristen M. Biggar, N-BioS', 'PO_EMAI': None, 'PO_PHON': None}
As the gate oxide thickness of a MOSFET transistor shrinks down                 to below 100 A, there is strong evidence that the carrier                       mobility in the conduction channel is reduced systematically with gate          oxide thickness.  The objective of this research is to 91)                      experimentally establish the relationship between the channel                   mobility and the gate oxide thickness for both p- and n- channel                devices over a wide range of thicknesses(30-200 A), with a goal                 toward the development of a set of empirical equations useful for               future device simulations; and (2) theoretically model the                      thickness-dependent mobility behavior based on fundamental                      scattering mechanisms.  In addition, important issues pertinent                 to the processing of very thin oxide MOSFET devices will be                     systematically investigated, and the results should be relevant                 to practical down scaling of VLSI devices.
{'FirstName': 'Tso-Ping', 'LastName': 'Ma', 'PI_MID_INIT': None, 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Tso-Ping Ma', 'EmailAddress': 't.ma@yale.edu', 'NSF_ID': '000118561', 'StartDate': '08/15/1988', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'Yale University', 'CityName': 'NEW HAVEN', 'ZipCode': '065113572', 'PhoneNumber': '2037854689', 'StreetAddress': '150 MUNSON ST', 'StreetAddress2': None, 'CountryName': 'United States', 'StateName': 'Connecticut', 'StateCode': 'CT', 'CONGRESSDISTRICT': '03', 'CONGRESS_DISTRICT_ORG': 'CT03', 'ORG_UEI_NUM': 'FL6GV84CKN57', 'ORG_LGL_BUS_NAME': 'YALE UNIV', 'ORG_PRNT_UEI_NUM': 'FL6GV84CKN57'}
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