Monolithic Optical Data Transmitters
{'Code': '15030000', 'Directorate': {'Abbreviation': 'TIP', 'LongName': 'Dir for Tech, Innovation, & Partnerships'}, 'Division': {'Abbreviation': 'TI', 'LongName': 'Translational Impacts'}}
{'SignBlockName': 'Ritchie B. Coryell', 'PO_EMAI': None, 'PO_PHON': None}
This proposal describes a six month program to address the                      feasibility of commercial production processes for monolithic                   integration of a semiconductor laser diode and its associated                   driving/modulating transistor.  The initiative for this work stems              from an identified market.  Pacific Monolithics has told NESI that              they would purchase large quantities of this type of product if                 available.  The laser will be of the Graded Index Separate                      Confining Heterostructure Single Quantum Well (GRINCSH-SQW) type                which has produced the highest performance semiconductor lasers to              date.  The transistor structure will be the strained channel,                   Modulation Doped Field Effect Transistor (MODFET) type.  This type              MODFET has produced the world's fastest transistor for the                      proposed geometry.  The AlGaAs quantum well laser and transistor                structure will be grown by Molecular Beam Epitaxy (MBE) and                     transferred in Phase II to Organometallic Vapor Phase Epitaxy                   (OMVPE) for mass production (cost reduction).  These individual                 devices and materials, as well as the growth and fabrication                    technologies have been demonstrated at Cornell University.  Phase               I of this program would extend this knowledge to include the                    integration technology.  This is a necessary condition for                      confidence in future manufacturability.  The lasing wavelength                  will be = 850 nm, suitable for short haul plastic or multimode                  glass fibers (local area) optical signal transmission.  In the                  future this technology would lead on to optical networking.
{'FirstName': 'Colin', 'LastName': 'Wood', 'PI_MID_INIT': 'E', 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Colin E Wood', 'EmailAddress': None, 'PI_PHON': None, 'NSF_ID': '000160798', 'StartDate': '01/01/1989', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'North East Semiconductor Incorporated', 'CityName': 'Ithaca', 'ZipCode': '148509760', 'PhoneNumber': '7162754867', 'StreetAddress': '61 Burdick Hill Road', 'StreetAddress2': None, 'CountryName': 'United States', 'StateName': 'New York', 'StateCode': 'NY', 'CONGRESSDISTRICT': '23', 'CONGRESS_DISTRICT_ORG': 'NY23', 'ORG_UEI_NUM': None, 'ORG_LGL_BUS_NAME': None, 'ORG_PRNT_UEI_NUM': None}
{'Name': None, 'CityName': None, 'StateCode': None, 'ZipCode': None, 'StreetAddress': None, 'CountryCode': None, 'CountryName': None, 'StateName': None, 'CountryFlag': None, 'CONGRESSDISTRICT': None, 'CONGRESS_DISTRICT_PERF': '""'}
{'Code': '5371', 'Text': 'SBIR Phase I'}
{'url': 'https://www.nsf.gov/awardsearch/download?DownloadFileName=1988&All=true', 'xml': '8860729.xml'}