Semiconductor Physical Electronics at Low Temperatures
{'Code': '07010000', 'Directorate': {'Abbreviation': 'ENG', 'LongName': 'Directorate For Engineering'}, 'Division': {'Abbreviation': 'ECCS', 'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Cassandra Queen', 'PO_EMAI': 'cqueen@nsf.gov', 'PO_PHON': '7032925383'}
The physical electronics at low temperatures of semiconductor materials         and devices will be studied.  Included is a combined theoretical and            experimental investigation of carrier freezeout for various                     semiconductor devices as a function of material, impurity type (n or p)         and specie, impurity concentration and temperature.  The temperature            dependence of the operating characteristics of GaAs MESFET's, Si                MOSFET's, and CRYOFET's will be investigated.  A CRYOFET has structure          much like that of a MOSFET but has substrate of the same conductivity           type Source and Drain.  While it is a low linear resistance at room             temperature it functions much like a MOSFET at temperatures below that          for carrier freezeout (e.g. 4.2 K).
{'FirstName': 'Richard', 'LastName': 'Anderson', 'PI_MID_INIT': 'L', 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Richard L Anderson', 'EmailAddress': None, 'NSF_ID': '000385010', 'StartDate': '07/15/1986', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'University of Vermont & State Agricultural College', 'CityName': 'BURLINGTON', 'ZipCode': '054051704', 'PhoneNumber': '8026563660', 'StreetAddress': '85 S PROSPECT STREET', 'StreetAddress2': None, 'CountryName': 'United States', 'StateName': 'Vermont', 'StateCode': 'VT', 'CONGRESSDISTRICT': '00', 'CONGRESS_DISTRICT_ORG': 'VT00', 'ORG_UEI_NUM': 'Z94KLERAG5V9', 'ORG_LGL_BUS_NAME': 'UNIVERSITY OF VERMONT & STATE AGRICULTURAL COLLEGE', 'ORG_PRNT_UEI_NUM': None}
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{'Code': '145600', 'Text': 'SOLID-STATE&MICROSTRUCTURE RES'}
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