Integrated Gallium Arsenide Emitter Element for Optical     Interconnections
{'Code': '15030000', 'Directorate': {'Abbreviation': 'TIP', 'LongName': 'Dir for Tech, Innovation, & Partnerships'}, 'Division': {'Abbreviation': 'TI', 'LongName': 'Translational Impacts'}}
{'SignBlockName': 'Ritchie B. Coryell', 'PO_EMAI': None, 'PO_PHON': None}
During the previously awarded Phase I research program, AstroPower has          demonstrated a working GaAs LED fabricated on a GaAs/Si                         heterostructure.  The selective liquid phase epitaxy growth (SLPE)              method was used to obtain heteroepitaxial GaAs-on-silicon.  Successful          and reproducible procedures to obtain  wetting and nucleation of the            heteroepitaxial structure have been established.  Graded interlayers            to reduce lattice strain and minimize lateral dislocation propagation           have been used to obtain a stoichiometric gallium arsenide overgrowth           layer.  Monolithic LED sources integrated with silicon N-MOS drivers            have been fabricated.                                                                                                                                           The AstroPower Phase II research proposal plans to optimize the                 monolithically integrated optical interconnect, based on the GaAs/Si            SLPE technology.  Phase II will use heteroepitaxial LED structures              fabricated on VLSI NMOS or bipolar circuits.  Continuation of this              research will likely lead to the creation of a scientific base  for             this new optoelectronic device technology and to the manufacture of             this integrated driver, GaAs emitter device during a possible Phase II          award.
{'FirstName': 'James', 'LastName': 'McNeely', 'PI_MID_INIT': 'B', 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'James B McNeely', 'EmailAddress': 'mcneely@astropower.com', 'PI_PHON': '3023660400', 'NSF_ID': '000276023', 'StartDate': '07/15/1989', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'AstroPower, Incorporated', 'CityName': 'Newark', 'ZipCode': '197162000', 'PhoneNumber': '3023660400', 'StreetAddress': 'Solar Park', 'StreetAddress2': None, 'CountryName': 'United States', 'StateName': 'Delaware', 'StateCode': 'DE', 'CONGRESSDISTRICT': '00', 'CONGRESS_DISTRICT_ORG': 'DE00', 'ORG_UEI_NUM': None, 'ORG_LGL_BUS_NAME': None, 'ORG_PRNT_UEI_NUM': None}
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{'Code': '5373', 'Text': 'SBIR Phase II'}
{'url': 'https://www.nsf.gov/awardsearch/download?DownloadFileName=1988&All=true', 'xml': '8802532.xml'}