Ft. Monmouth Interaction:  Magneto-reflectivity Study of    GaAs/AlAs Quantum Wells
{'Code': '07010000', 'Directorate': {'Abbreviation': 'ENG', 'LongName': 'Directorate For Engineering'}, 'Division': {'Abbreviation': 'ECCS', 'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Cassandra Queen', 'PO_EMAI': 'cqueen@nsf.gov', 'PO_PHON': '7032925383'}
The PI will use reflectivity and magneto-reflectivity spectroscopies            for the study of GaAs/AlAs quantum wells, grown at the U.S. Army                Electronic Devices and Technology Laboratory (EDTL), in collaboration           with Dr. Mitra Dutta.  A graduate student will participate in the               sample growth process, at EDTL, as well as in some of the                       characterization experiments there.  The objective of the proposed              work is to determine a number of parameters of GaAs/AlAs quantum                wells.  Specifically we intend to measure:  (a) the effect of                   confinement and strain on the band structure, (b) the electron                  effective mass inside the wells, and (c) exciton binding energies.                                                                                              These parameters are crucial for the design and modeling of electronic          devices that incorporate these heterostructures.  Since no magneto-             optical set-up is available at EDTL, we hope that this joint project            will help the crystal growth and characterization effort there.
{'FirstName': 'Athos', 'LastName': 'Petrou', 'PI_MID_INIT': None, 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Athos Petrou', 'EmailAddress': 'petrou@buffalo.edu', 'NSF_ID': '000290102', 'StartDate': '04/15/1988', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
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{'Code': '145600', 'Text': 'SOLID-STATE&MICROSTRUCTURE RES'}
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