EIA: Studies of III-V Lattice-Mismatched Heterojunction     Devices
{'Code': '07010000', 'Directorate': {'Abbreviation': 'ENG', 'LongName': 'Directorate For Engineering'}, 'Division': {'Abbreviation': 'ECCS', 'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Cassandra Queen', 'PO_EMAI': 'cqueen@nsf.gov', 'PO_PHON': '7032925383'}
Lattice-mismatched GaInAs and A InAs layers will be grown on InP                and GaAs substrates by MBE and MOCVD.  Different-density misfit                 dislocations will be intentionally introduced.  Samples will be                 nondestructively characterized by the x-ray rocking curve technique             and the rocking curve topography technique, and cleaned and cleaved.            Thin metal film Ohmic or Schottky contacts will be formed and I-V or            C-V characteristics will be studied.                                                                                                                            Expected results are (l) Schottky barrier heights for the ternary               epilayer-substrate junction as a function of the misfit dislocation             density, (2) effects of the misfit dislocations in the electrical               characteristics for p-i-n and n-n+-n heterostructures, (3) the                  critical thickness of the ternary epilayer as a function of the                 misfit, and (4) assessment of the nondestructive x-ray technique in             measurements of the misfit dislocations.                                                                                                                        This proposed project is expected to improve the present                        understanding of the effects of the misfit dislocations in device               performance and provide further and accurate data on the Schottky               barrier heights for metal-ternary and ternary-substrate contacts.
{'FirstName': 'Chu', 'LastName': 'Wie', 'PI_MID_INIT': 'R', 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Chu R Wie', 'EmailAddress': 'wie@buffalo.edu', 'NSF_ID': '000451340', 'StartDate': '06/01/1987', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'SUNY at Buffalo', 'CityName': 'AMHERST', 'ZipCode': '142282577', 'PhoneNumber': '7166452634', 'StreetAddress': '520 LEE ENTRANCE STE 211', 'StreetAddress2': None, 'CountryName': 'United States', 'StateName': 'New York', 'StateCode': 'NY', 'CONGRESSDISTRICT': '26', 'CONGRESS_DISTRICT_ORG': 'NY26', 'ORG_UEI_NUM': 'LMCJKRFW5R81', 'ORG_LGL_BUS_NAME': 'RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK, THE', 'ORG_PRNT_UEI_NUM': 'GMZUKXFDJMA9'}
{'Name': None, 'CityName': None, 'StateCode': None, 'ZipCode': None, 'StreetAddress': None, 'CountryCode': None, 'CountryName': None, 'StateName': None, 'CountryFlag': None, 'CONGRESSDISTRICT': None, 'CONGRESS_DISTRICT_PERF': '""'}
{'Code': '145600', 'Text': 'SOLID-STATE&MICROSTRUCTURE RES'}
{'url': 'https://www.nsf.gov/awardsearch/download?DownloadFileName=1987&All=true', 'xml': '8707111.xml'}