Scanning Electron Microscopy of Semiconductor               Heterostructures and Superlattices (Materials Research)
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Semiconductor heterojunctions and superlattices are critical                    material structures for high performance electronic and opto-                   electronic devices.  A broad program at Princeton is currently                  underway studying the basic physics, material growth processes,                 and device applications of these structures in three different                  material classes -- (1) III-V crystalline semiconductors, (2)                   silicon-based heterostructures, and (3) amorphous superlattices.                For a complete research program in any of these material systems,               it is necessary to know the composition of the grown films, the                 microstructure of the films and of the devices fabricated in                    them, and the transport properties of carriers in these films.                  Scanning electron microscopy (SEM) will be added to the                         laboratory to allow these meassurements.  Energy dispersive x-ray               analysis and beam induced current analysis will be required.  The               SEM will be a great aid to the research groups in all three of                  the above areas.
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{'Code': '1750', 'Text': 'MPS DMR INSTRUMENTATION'}
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