Electroluminescence of Amorphous Silicon-Carbide Alloys
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{'SignBlockName': 'Darryl G. Gorman', 'PO_EMAI': None, 'PO_PHON': None}
Amorphous silicon-carbide materials are proposed to be                          incorporated into electroluminescent thin-film devices.  These                  materials, due to their non-conserved momentum transitions, offer               high luminescence efficiencies, and variable emission                           wavelengths, depending on the carbon content.  At least two                     deposition methods are to be used to compare two types of                       electroluminescent structures.  These methods are suitable for                  both insulator and amorphous silicon-carbide layers, as well as                 for n and p-doped layers.  Compared to conventional large-area                  thin-film electroluminescent devices, the preparation can thus be               integrated into one technique, and hence significantly reduce                   cost.  Potential applications include liquid-crystal back-                      lighting, alphanumeric displays, x-y addressable monochrome and                 multicolor displays, ultimately leading to flat-panel color                     television.
{'FirstName': 'H.', 'LastName': 'Schade', 'PI_MID_INIT': None, 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'H. Schade', 'EmailAddress': None, 'PI_PHON': None, 'NSF_ID': '000197814', 'StartDate': '01/01/1989', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
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{'Code': '5371', 'Text': 'SBIR Phase I'}
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