Inversion/Accumulation Layer Transport on InP and InGaAs
{'Code': '07010000', 'Directorate': {'Abbreviation': 'ENG', 'LongName': 'Directorate For Engineering'}, 'Division': {'Abbreviation': 'ECCS', 'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Kristen M. Biggar, N-BioS'}
The proposed research will endeavor to understand 2D transport                  phenomena in surface inversion and accumulation layers on InP and               InGaAs.  The present lack of understanding is caused both by the                structural/chemical complexity of the surface region and insufficient           experimental data and transport modeling of InP/InGaAs devices.  The            research proposed here will provide detailed transport measurements and         interfacial analysis upon which realistic transport models can be               founded.  This will provide an increased understanding 2D transport at          insulator-semiconductor interfaces and advance the development of the           MOS devices on InP and InGaAs.
[{'FirstName': 'Carl', 'LastName': 'Wilmsen', 'EmailAddress': None, 'StartDate': '09/01/1986', 'EndDate': None, 'RoleCode': 'Principal Investigator'}, {'FirstName': 'Derek', 'LastName': 'Lile', 'EmailAddress': None, 'StartDate': '09/01/1986', 'EndDate': None, 'RoleCode': 'Co-Principal Investigator'}]
{'Name': 'Colorado State University', 'CityName': 'Fort Collins', 'ZipCode': '805232002', 'PhoneNumber': '9704916355', 'StreetAddress': '601 S Howes St', 'CountryName': 'United States', 'StateName': 'Colorado', 'StateCode': 'CO'}
[{'Code': '1456', 'Text': 'SOLID-STATE&MICROSTRUCTURE RES'}, {'Code': '9145', 'Text': 'SPECIAL PROGRAMS-RESERVE'}]
{'url': 'https://www.nsf.gov/awardsearch/download?DownloadFileName=1986&All=true', 'xml': '8610098.xml'}