Center for Study of Epitaxially Grown III-V Semiconductor   Surfaces
{'Code': '03070001', 'Directorate': {'Abbreviation': 'MPS', 'LongName': 'Direct For Mathematical & Physical Scien'}, 'Division': {'Abbreviation': 'DMR', 'LongName': 'Division Of Materials Research'}}
{'SignBlockName': 'H. Hollis Wickman', 'PO_EMAI': None, 'PO_PHON': None}
A MRG focussing on the structure, electronic properties and                     kinetics of molecular beam epitaxy grown III-V compounds,                       particularly gallium arsenide is to be established. The program                 will use probes such as photoemission and energy loss studies to                determine the electronic structure of the surfaces of interest.                 It will also use direct structural probes such as scanning                      tunneling microscopy and low energy electron diffraction to                     elucidate the geometry and nature of the chemical bonding. A good               deal of effort will be placed on study of the kinetics of the                   growth process. Theoretical modeling of surface kinetics via                    time-dependent Monte-Carlo calculations will be conducted. III-V                compounds are a technologically important and interesting class                 of materials which are not sufficiently understood at a                         fundamental level, and it is the goal of this program to improve                that understanding.
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[{'Code': '1747', 'Text': 'MATERIALS RESEARCH GRPS PROGRM'}, {'Code': '1984', 'Text': 'MATERIALS SYNTHESIS & PROCESSN'}, {'Code': '9145', 'Text': 'SPECIAL PROGRAMS-RESERVE'}, {'Code': '9150', 'Text': 'EPSCoR Co-Funding'}]
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