Research Initiation:  Study of Deep Impurity Levels in      Thermally and Pulsed-Laser Annealed GaAs
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{'SignBlockName': 'Cassandra Queen', 'PO_EMAI': 'cqueen@nsf.gov', 'PO_PHON': '7032925383'}
Thermal annealed, transient annealed, and pulsed laser annealed, n-type         ion implanted samples of Cr-doped and undoped semi-insulated GaAs will          be investigated by the method of deep level transient spectroscopy              (DLTS) and other relevant electrical and optical measurements.  GaAs            samples with light and heavy doping of Si and Se will be examined.              Capless thermal annealing will be performed in the annealing furnace,           transient annealing (1 - 10 sec) will be employed for the encapsulated          samples, and laser annealing will be done by using dye and XeCl excimer         laser.  Profiles of deep energy levels will be studied by DLTS and C-V          measurements to determine the redistribution of impurities and defects          during the thermal treatment.
{'FirstName': 'Andrew', 'LastName': 'Rys', 'PI_MID_INIT': None, 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Andrew Rys', 'EmailAddress': 'andrys@ksu.edu', 'NSF_ID': '000368766', 'StartDate': '05/01/1985', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'Kansas State University', 'CityName': 'MANHATTAN', 'ZipCode': '665062504', 'PhoneNumber': '7855326804', 'StreetAddress': '1601 VATTIER STREET', 'StreetAddress2': '103 FAIRCHILD HALL', 'CountryName': 'United States', 'StateName': 'Kansas', 'StateCode': 'KS', 'CONGRESSDISTRICT': '01', 'CONGRESS_DISTRICT_ORG': 'KS01', 'ORG_UEI_NUM': 'CFMMM5JM7HJ9', 'ORG_LGL_BUS_NAME': 'KANSAS STATE UNIVERSITY', 'ORG_PRNT_UEI_NUM': None}
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{'Code': '145600', 'Text': 'SOLID-STATE&MICROSTRUCTURE RES'}
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