Gain Resonances and Transit-Time Effects in High-Frequency  Heterojunction Bipolar Transistors
{'Code': '07010000', 'Directorate': {'LongName': 'Directorate For Engineering'}, 'Division': {'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Arthur R. Bergen'}
This project will examine heterojunction bipolar transistors at high            frequencies.  There is a predicted resonance above about 60 GHz which           the PI will attempt to find experimentally.  The transistor will be             designed to move the resonance to the experimentally accessible range           below 40 GHz.  The next stage of the project is to optimize the device          design to the maximum possible frequency performance.
{'FirstName': 'Sheila', 'LastName': 'Prasad', 'EmailAddress': 'prasad@ece.neu.edu', 'StartDate': '03/01/1989', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'Northeastern University', 'CityName': 'BOSTON', 'ZipCode': '021155005', 'PhoneNumber': '6173733004', 'StreetAddress': '360 HUNTINGTON AVE', 'CountryName': 'United States', 'StateName': 'Massachusetts', 'StateCode': 'MA'}
{'Code': '1456', 'Text': 'SOLID-STATE&MICROSTRUCTURE RES'}
{'url': 'https://www.nsf.gov/awardsearch/download?DownloadFileName=1988&All=true', 'xml': '8818542.xml'}