Nonstationary Transport in Semiconductor Device Modeling
{'Code': '07010000', 'Directorate': {'Abbreviation': 'ENG', 'LongName': 'Directorate For Engineering'}, 'Division': {'Abbreviation': 'ECCS', 'LongName': 'Div Of Electrical, Commun & Cyber Sys'}}
{'SignBlockName': 'Cassandra Queen', 'PO_EMAI': 'cqueen@nsf.gov', 'PO_PHON': '7032925383'}
For 1 um Si MOSFETs, the spatial transient effect can make up to 20%            modification of the local mobility.  This effect is certainly larger            in submicron devices.  In this computational project, we will                   investigate this effect by both analytical techniques as well as Monte          Carlo simulations on the San Diego Cray XMP.  The goal is to                    understand the transport physics at small distances involved in                 submicron devices and to obtain a mobility formula, simple and                  accurate, to use in device simulators.  The major computational                 technique will be Monte Carlo procedures.                                                                                                                       This is an expedited award for novel research, for which no funds have          been granted.  The PI has been granted 50 service units at the NSF              Supercomputer Center at San Diego.
{'FirstName': 'Dee-Son', 'LastName': 'Pan', 'PI_MID_INIT': None, 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Dee-Son Pan', 'EmailAddress': None, 'NSF_ID': '000441385', 'StartDate': '06/15/1987', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'University of California-Los Angeles', 'CityName': 'LOS ANGELES', 'ZipCode': '900244200', 'PhoneNumber': '3107940102', 'StreetAddress': '10889 WILSHIRE BLVD STE 700', 'StreetAddress2': None, 'CountryName': 'United States', 'StateName': 'California', 'StateCode': 'CA', 'CONGRESSDISTRICT': '36', 'CONGRESS_DISTRICT_ORG': 'CA36', 'ORG_UEI_NUM': 'RN64EPNH8JC6', 'ORG_LGL_BUS_NAME': 'UNIVERSITY OF CALIFORNIA, LOS ANGELES', 'ORG_PRNT_UEI_NUM': None}
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