Photoemission Study of Donor Impurities in Semiconductors
{'Code': '03070003', 'Directorate': {'Abbreviation': 'MPS', 'LongName': 'Direct For Mathematical & Physical Scien'}, 'Division': {'Abbreviation': 'DMR', 'LongName': 'Division Of Materials Research'}}
{'SignBlockName': 'H. Hollis Wickman', 'PO_EMAI': None, 'PO_PHON': None}
They will study donor impurity levels in semiconductors by                      photoemission spectroscopy.  Concentrations as low as one part in               10-6 will be studied with meV energy resolution, at a photon                    energy near 5 eV.  Many systems will be studied.  The                           Silicon:Phosphorus system is emphasized.  One set of experiments                will use the surface sensitivity of the photoemission technique                 to study impurity levels near surfaces.  The large effective                    hydrogenic radius of 20 A for Phosphorus and Silicon should                     result in a significantly defferent binding energy of the                       Phosphorus levels near the surface than in the bulk.  This study                will produce the first experimental observation of this surface                 binding enrgy shift.  A second set of experiments will exploit                  the unique power of photoemission spectroscopy to directly                      observe the one electron density of occupied levels and study                   impurity band formation as a function of concentration.  The                    concentration range near the metal/insulator critical                           concentration (3x10-18/cm3 for Silicon:Phosphorus) will be                      emphasized.  This study will show the electronic density of                     states directly, and determine the bandwidth and Fermi level                    position as functions of concentration.
{'FirstName': 'Eric', 'LastName': 'Jensen', 'PI_MID_INIT': 'S', 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Eric S Jensen', 'EmailAddress': 'jensen@binah.cc.Brandeis.edu.', 'NSF_ID': '000391575', 'StartDate': '02/01/1989', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'Brandeis University', 'CityName': 'WALTHAM', 'ZipCode': '024532728', 'PhoneNumber': '7817362121', 'StreetAddress': '415 SOUTH ST', 'StreetAddress2': None, 'CountryName': 'United States', 'StateName': 'Massachusetts', 'StateCode': 'MA', 'CONGRESSDISTRICT': '05', 'CONGRESS_DISTRICT_ORG': 'MA05', 'ORG_UEI_NUM': 'MXLZGAMFEKN5', 'ORG_LGL_BUS_NAME': 'BRANDEIS UNIVERSITY', 'ORG_PRNT_UEI_NUM': 'JLC9RHNT9479'}
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{'Code': '1761', 'Text': 'SOLID STATE PHYSICS'}
{'url': 'https://www.nsf.gov/awardsearch/download?DownloadFileName=1988&All=true', 'xml': '8814071.xml'}