Halogen Atom Source for Semiconductor Etching
{'Code': '15030000', 'Directorate': {'Abbreviation': 'TIP', 'LongName': 'Dir for Tech, Innovation, & Partnerships'}, 'Division': {'Abbreviation': 'TI', 'LongName': 'Translational Impacts'}}
{'SignBlockName': 'Ritchie B. Coryell', 'PO_EMAI': None, 'PO_PHON': None}
This Phase II SBIR project provides for the development and                     demonstration of novel applications of an ultrahigh vacuum compatible,          microwave discharge source of chlorine and fluorine atoms.  Chemically          assisted etching of semiconductor materials with halogen atoms in               conjunction with photon, electron, and ion stimulation will be                  investigated.  The Phase I project was successful in demonstrating              that a previously developed fluorine atom source could be modified so           as to produce chlorine atoms.
{'FirstName': 'Andrew', 'LastName': 'Freedman', 'PI_MID_INIT': None, 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Andrew Freedman', 'EmailAddress': 'af@aerodyne.com', 'NSF_ID': '000185233', 'StartDate': '12/15/1988', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
{'Name': 'Aerodyne Research Inc', 'CityName': 'BILLERICA', 'ZipCode': '018213934', 'PhoneNumber': '9789320231', 'StreetAddress': '45 MANNING RD', 'StreetAddress2': None, 'CountryName': 'United States', 'StateName': 'Massachusetts', 'StateCode': 'MA', 'CONGRESSDISTRICT': '06', 'CONGRESS_DISTRICT_ORG': 'MA06', 'ORG_UEI_NUM': 'HTMHV7AL9A86', 'ORG_LGL_BUS_NAME': 'AERODYNE RESEARCH INC', 'ORG_PRNT_UEI_NUM': None}
{'Name': None, 'CityName': None, 'StateCode': None, 'ZipCode': None, 'StreetAddress': None, 'CountryCode': None, 'CountryName': None, 'StateName': None, 'CountryFlag': None, 'CONGRESSDISTRICT': None, 'CONGRESS_DISTRICT_PERF': '""'}
{'Code': '5373', 'Text': 'SBIR Phase II'}
{'url': 'https://www.nsf.gov/awardsearch/download?DownloadFileName=1988&All=true', 'xml': '8808058.xml'}