Studies of the Role of Defects and Impurities in Device-TypeSemiconductors
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{'SignBlockName': 'Cassandra Queen', 'PO_EMAI': 'cqueen@nsf.gov', 'PO_PHON': '7032925383'}
The study of impurities in semiconductors and their relationship to             device performance continues to be an active research area.  Modeling           work is being performed, experimental crystals are being grown, and             experimentally produced deep traps in these semiconductors are being            measured.  Recent experiments and modeling are focusing on compound             semiconductors.  Finally, the modeling work on mercury cadmium                  telluride defect centers is being completed.
{'FirstName': 'Charles', 'LastName': 'Myles', 'PI_MID_INIT': 'W', 'PI_SUFX_NAME': None, 'PI_FULL_NAME': 'Charles W Myles', 'EmailAddress': None, 'NSF_ID': '000400145', 'StartDate': '12/15/1984', 'EndDate': None, 'RoleCode': 'Principal Investigator'}
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{'Code': '145600', 'Text': 'SOLID-STATE&MICROSTRUCTURE RES'}
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