The Turn-OFF switching transient of silicon-based power bipolar semiconductor devices, caused by stored charge in the device during the forward conduction state, limits switching speed of the device, which in turn limits the efficiency of the application it is used within.
The Turn-OFF switching transient of silicon-based power bipolar semiconductor devices, caused by stored charge in the device during the forward conduction state, is known to limit the device switching speed. This in turn limits the efficiency of the application it is used within.