When the source is from a chemical vapor precursor the process is called "low pressure chemical vapor deposition" (LPCVD) or, if in a plasma, "plasma enhanced CVD" (PECVD) or "plasma assisted CVD" (PACVD).
When the source is a chemical vapor precursor the process is called chemical vapor deposition (CVD). The latter has several variants: "low-pressure chemical vapor deposition" (LPCVD), "plasma-enhanced CVD" (PECVD), and "plasma-assisted CVD" (PACVD).