Shive's invention sparked Shockley's invention of the junction transistor. These equations are based on the transport model for a bipolar junction transistor. It would evolve into the bipolar junction transistor. Junction transistor usually means bipolar junction transistor. The analogous bipolar junction transistor circuit is the common-collector amplifier. They then invented the bipolar junction transistor in 1948. The analogous bipolar junction transistor circuit is the common-base amplifier. Morgan Sparks made the bipolar junction transistor into a practical device. Shockley's research team also invented the bipolar junction transistor in 1952. William Shockley then invented the bipolar junction transistor at BTL in 1948. Shockley's research team later invented the bipolar junction transistor in 1948. The bipolar junction transistor, unlike other transistors, is usually not a symmetrical device. In the illustrations below, a bipolar junction transistor is shown as the amplifying device. A diffused junction transistor is a transistor formed by diffusing dopants into a semiconductor substrate. In 1954, physical chemist Morris Tanenbaum fabricated the first silicon junction transistor at Bell Labs.