In a new study published in Advanced Materials, the Argonne team proposed a new kind of ​“redox gating” technique that can control the movement of electrons in and out of a semiconducting material.
Researchers at UChicago Pritzker Molecular Engineering and Argonne National Laboratory have achieved a breakthrough that could allow for a new kind of microelectronic material to consume only a fraction of the electricity of conventional electronics while still operating at peak performance. In a new study published in Advanced Materials, the Argonne team proposed a new kind of ​“redox gating” technique that can control the movement of electrons in and out of a semiconducting material.