Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies.
Pošto GaN tranzistori mogu da rade na mnogo višim temperaturama i rade na mnogo većim naponima od tranzistora galijum arsenida (GaAs), oni prave idealna pojačala snage na mikrotalasnim frekvencijama.