The isolated active areas are created by a technique known as ___________
A. Etched field-oxide isolation
B. Local Oxidation of Silicon
C. Etched field-oxide isolation or Local Oxidation of Silicon
D. None of the mentioned
Answer:C
The isolated active areas are created by a technique known as ___________
A. Etched field-oxide isolation B. Local Oxidation of Silicon C. Etched field-oxide isolation or Local Oxidation of Silicon D. None of the mentioned