s leads, a global, in-plane ϵ ( = ϵ [ 000 ] - ϵ [ 000 ] ) is added to the 0DES. First we address the strain-induced piezoresistance behavior of the patterned region for n ≃ 0.0 × 00 00 cm - 0 , taken at B ⊥ = 0 . The resistance profile, shown in Fig. 0(b) , is typical of the bivalley AlAs 0DES [0] and reflects the intervalley transfer of electrons and their anisotropic mobility in the X and Y valleys. At large negative ϵ , the resistance saturates when only the X valley, which has a large effective mass ( m l ) and therefore high resistance along [000], is occupied (point E ). For increasing ϵ , however, the resistance starts to drop as electrons begin the intervalley transfer (points D − B ) and eventually saturates at large positive ϵ . Now all electrons reside in the Y valley, which has low resistance along [000] (point A ). The reduction in resistance stems from the Y -valley electrons